JP6964979B2 - 蒸着で堆積されたフォトレジスト、及びそのための製造及びリソグラフィシステム - Google Patents

蒸着で堆積されたフォトレジスト、及びそのための製造及びリソグラフィシステム Download PDF

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Publication number
JP6964979B2
JP6964979B2 JP2016502257A JP2016502257A JP6964979B2 JP 6964979 B2 JP6964979 B2 JP 6964979B2 JP 2016502257 A JP2016502257 A JP 2016502257A JP 2016502257 A JP2016502257 A JP 2016502257A JP 6964979 B2 JP6964979 B2 JP 6964979B2
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Prior art keywords
extreme ultraviolet
photoresist
ultraviolet photoresist
precursor
deposited
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Japanese (ja)
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JP2016517633A5 (enExample
JP2016517633A (ja
Inventor
ティモシー マイケルソン
ティモシー ダブリュー ウェイドマン
バリー リー チン
マジード エー フォウド
ポール ディートン
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Applied Materials Inc
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Applied Materials Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2016502257A 2013-03-14 2014-03-13 蒸着で堆積されたフォトレジスト、及びそのための製造及びリソグラフィシステム Expired - Fee Related JP6964979B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361786042P 2013-03-14 2013-03-14
US61/786,042 2013-03-14
US14/139,457 2013-12-23
US14/139,457 US9632411B2 (en) 2013-03-14 2013-12-23 Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
PCT/US2014/026826 WO2014152023A1 (en) 2013-03-14 2014-03-13 Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor

Publications (3)

Publication Number Publication Date
JP2016517633A JP2016517633A (ja) 2016-06-16
JP2016517633A5 JP2016517633A5 (enExample) 2021-09-24
JP6964979B2 true JP6964979B2 (ja) 2021-11-10

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JP2016502257A Expired - Fee Related JP6964979B2 (ja) 2013-03-14 2014-03-13 蒸着で堆積されたフォトレジスト、及びそのための製造及びリソグラフィシステム

Country Status (7)

Country Link
US (2) US9632411B2 (enExample)
JP (1) JP6964979B2 (enExample)
KR (1) KR102207228B1 (enExample)
CN (1) CN105074572B (enExample)
SG (2) SG10201707388RA (enExample)
TW (1) TWI614364B (enExample)
WO (1) WO2014152023A1 (enExample)

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US9632411B2 (en) 2017-04-25
CN105074572A (zh) 2015-11-18
US9829805B2 (en) 2017-11-28
SG11201506506PA (en) 2015-09-29
CN105074572B (zh) 2019-11-26
SG10201707388RA (en) 2017-10-30
JP2016517633A (ja) 2016-06-16
US20140268082A1 (en) 2014-09-18
WO2014152023A1 (en) 2014-09-25
US20170068174A1 (en) 2017-03-09
TWI614364B (zh) 2018-02-11
TW201439361A (zh) 2014-10-16
KR20150129781A (ko) 2015-11-20

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