TWI601303B - 薄矽太陽能電池的金屬箔輔助製造 - Google Patents

薄矽太陽能電池的金屬箔輔助製造 Download PDF

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TWI601303B
TWI601303B TW102122000A TW102122000A TWI601303B TW I601303 B TWI601303 B TW I601303B TW 102122000 A TW102122000 A TW 102122000A TW 102122000 A TW102122000 A TW 102122000A TW I601303 B TWI601303 B TW I601303B
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metal foil
layer
doped region
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範林 成
凱柏爾 哈利
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太陽電子公司
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Description

薄矽太陽能電池的金屬箔輔助製造
本文所述的專利標的之實施例大致係關於太陽能電池。更具體而言，本專利標的之實施例係關於太陽能電池的製造程序及結構。
眾所皆知太陽能電池為將太陽輻射轉換成電能的裝置。太陽能電池具有在正規操作期間面向太陽以收集太陽輻射的正面；及相對於正面的背面。撞擊在太陽能電池上的太陽輻射產生電荷，其可用來供能給例如負載之外部電路。
太陽能電池的製造程序一般包括眾多步驟，其包含遮罩、蝕刻、沈積、擴散及其他步驟。本發明的實施例提供有利的太陽能電池程序。
一實施例係關於製造太陽能電池的方法。從矽基材劈開矽薄層(silicon lamina)。矽薄層的背面包括P型及N型摻雜區。將金屬箔附接至矽薄層的背面。該金屬箔可有利地用作為用於在處理該矽薄層之正面的期間操作該矽薄層之內建載體。
另一實施例係關於包括在背面上具有P型及N型摻雜區的矽薄層之太陽能電池。金屬箔係黏附至薄層背面，且接觸係形成在金屬箔及摻雜區之間。
另一實施例係關於製造太陽能電池的方法，其包含將金屬箔黏附至矽基材的背面。可接著從矽基材的背面分離矽薄層。使用金屬箔作為內建載體，以用於在處理矽薄層之正面的期間操作該矽薄層。
一旦閱讀包括伴隨圖式及申請專利範圍之此公開內容的全文，在此項技術中具有通常知識者當能立即明白本發明的這些實施例及其他實施例、實施態樣及特徵。
102‧‧‧矽基材
104‧‧‧P型摻雜(P+)區
106‧‧‧N型摻雜(N+)區
108‧‧‧介電層
202‧‧‧佈植深度
302‧‧‧矽薄層
304‧‧‧黏著層
306‧‧‧金屬箔
402‧‧‧表面
502‧‧‧玻璃層
503‧‧‧封裝材料
604、606‧‧‧金屬接觸
608、908‧‧‧指狀分離
700、800、1100‧‧‧方法
702、704、706、708、710、806、807、1102、1104、1106、1108、1110、1112‧‧‧方塊
902‧‧‧次要基材
904‧‧‧P型接觸
906‧‧‧N型接觸
1002‧‧‧薄層周界
1004‧‧‧箔部分
1006‧‧‧延伸區域
可同時參考詳細說明及申請專利範圍並搭配以下圖式以對本申請標的有更完整的了解，通篇圖式中的類似元件符號係指類似元件。圖式並未依比例繪製。
第1圖至第6圖為根據本發明之一實施例，概略地繪示太陽能電池製造之剖面圖。
第7圖為根據本發明之一實施例之製造太陽能電池之方法的流程圖。
第8圖為根據本發明之一替代實施例之製造太陽能電池之方法的流程圖。
第9圖為如根據第8圖之方法製造所製成的太陽能電池的剖面圖。
第10圖為根據本發明之一實施例之位於矽薄層背面上方之金屬箔的平面圖。
第11圖為根據本發明之另一實施例之製造薄矽太陽能電池之方法的流程圖。
在本公開內容中，提供眾多具體細節，例如，設備、結構、材料及方法的實例，以提供對本發明之實施例的徹底了解。然而，在此項技術中具有通常知識者當了解，本發明可在無一或多個該具體細節的情況下實行。在其他例子中，眾所周知的細節並未顯示或敘述，以避免使本發明的實施態樣難以理解。
本公開內容提供用於使用金屬箔形成薄矽太陽能電池的技術。有利地，金屬箔可用作為用於在處理薄層正面的期間操作不那麼易碎的矽薄層之內建的載體。隨後，可再利用金屬箔在薄層背面上形成金屬指狀及對P型及N型射極的接觸。
第1圖至第6圖為根據本發明之一實施例，概略地繪示薄矽太陽能電池製造的剖面圖。第1圖顯示矽基材102，其具有形成在其上的P型摻雜(P+)區104及形成在基材102之背面上的N型摻雜(N+)區106。P+及N+摻雜區在所製造之太陽能電池的背景下可稱為P型及N型射極。在第1圖所示之背面接觸式太陽能電池中，射極及對應的接觸係位於太陽能電池的背面之上。摻雜區可例如藉由從摻質源擴散摻質來形成。
可在背面上之P+及N+區的上方形成薄介電層108，以用於電絕緣、鈍化及/或其他目的。介電層108可包括例如氧化矽及/或氮化矽。或者，射極表面可藉由除了形成介電層108外的其他手段來鈍化，例如藉由化學鈍化。
第1圖的太陽能電池結構可放置在離子佈植工具中，離子佈植工具亦稱為「離子佈植器」。佈植器可用以於預定的佈植深度202佈植離子，如第2圖所繪示。離子可為氫離子(亦即，質子)。在替代實施例中，可佈植其他離子或將其他離子與氫共同佈植。例如，可以氦離子取代氫離子佈植或可讓氦離子與氫離子共同佈植。佈植的劑量在佈植深度處造成缺陷，以致佈植深度之上的平面薄層可從佈植深度下方之剩餘的矽基材分離或剝落。佈植能量控制佈植深度，且因此控制剝落之後的薄矽基材厚度。例如，佈植能量可校準為劈開具有於從10微米至100微米之範圍內的厚度的薄層。剝落可藉由以升高溫度加熱基材來實現。
如第3圖所繪示，金屬箔306可黏附至在矽薄層302背面上的介電層108。金屬箔306可為鋁箔。為了幫助用作為用於薄層的載體之箔，金屬箔306之延伸區域(操作區域)可延伸超過矽薄層302的周界。在一例示性的實施方式中，金屬箔306的組成物可為Al-1%Si(99%鋁及1%矽)或更通常的係Al-x%Si，其中x%是從0%至3%。可使用用於鋁箔的其他組成物。亦可使用除了鋁之外的金屬箔，例如銀箔。
在一實施例中，黏著層304可用來將金屬箔306黏附至矽薄層302的背面。黏著層304可為環氧樹脂、矽氧樹脂、乙烯乙酸乙烯酯(EVA)或其他封裝材料的薄層，其係施加至基材的背面。在一實施方式中，黏著層可為在黏附前預先施加至金屬箔之塗層。
在一替代實施例中，金屬箔306可利用在金屬箔306及基材背面間之接觸點陣列來黏附至基材背面。接觸點可藉由使用例如脈衝雷射來讓金屬箔點熔化而形成。在此實施例中，不需要黏著層304。箔下方介於接觸點間的氣隙可藉由平坦化箔來移除。
如第4圖所繪示，使用箔作為內建或整合的載體來支撐薄層，位於薄層302正面的表面402於後可經紋理化及鈍化。表面紋理化的作用是為了增加矽表面吸收光的容量，而表面鈍化的作用是為了減少表面的電荷再結合。表面紋理化可使用例如濕式表面蝕刻程序來實現。表面鈍化可藉由化學鈍化或藉由其他手段來實現。
其後，可在矽薄層302的正面上執行玻璃封裝程序。第5圖顯示所得的玻璃層502，其係使用封裝材料503附接至正面。
如第6圖所示，可接著在矽薄層302的背面上執行進一步的步驟。這些步驟包括在接觸孔中形成金屬接觸604及606，以分別電耦合至對應的P+區104及N+區106。第一組金屬接觸604可自金屬箔304至P+區104，且第二組金屬接觸606可形成為自金屬箔304至N+區106。在一實施例中，金屬接觸604及606可使用以雷射為主的接觸形成程序來形成。在這一類程序中，可使雷射掃描器可控地掃描脈衝雷射束橫跨所製造之太陽能電池的背面。脈衝雷射束可形成通過黏著層304及介電層108的接觸開口，且接觸開口可藉由熔化來自箔306的金屬而填充。
此外，指狀分離608圖案可形成在箔區域，以電隔離第一組金屬接觸604與第二組金屬接觸606。指狀分離608可配置以使引導接觸之箔的指狀為交叉指形。
第7圖為根據本發明之一實施例之製造薄矽太陽能電池之例示性方法700的流程圖。在第7圖的例示性方法700中，依據方塊702，射極區可首先形成矽晶圓上。矽晶圓可具有數百微米或更多的厚度，並可稱為厚操作晶圓。射極區包括P摻雜及N摻雜區兩者，並可如第1圖所示形成在晶圓的背面上。
依據方塊704，薄矽薄層可自矽晶圓劈開。例如，矽薄層可具有介於10微米至100微米之間的厚度。在一實施方式中，劈開可使用離子佈植來執行，並如上文針對第2圖所述般地剝落。或者，劈開可藉由從晶圓正面散裂或蝕刻一犧牲層來執行。
在方塊706中，金屬箔可黏附至矽薄層，如上文針對第3圖所述。特別是，金屬箔可黏附至矽薄層的背面表面。金屬箔可具有介於50微米及1毫米之間的厚度，以便針對薄矽薄層提供機械支撐。為了幫助用作用於薄層載體的箔，金屬箔之一延伸區域(操作區域)可延伸超過矽薄層的周界。在一實施方式中，黏附可藉由使用雷射燒金屬箔及矽薄層之間的接觸來實現。在另一實施方式中，黏附可使用塗布在金屬箔上的薄黏著層來實現。
根據方塊708，金屬箔可用作用於操作矽薄層的整合載體，以便可處理矽薄層的正面表面。正面表面的處理可包括紋理化及鈍化，如上文針對第4圖所述。表面紋理化及鈍化可藉由例如將薄層浸漬在化學溶液中對正面表面進行蝕刻及鈍化來實現。隨後，受到金屬箔支撐的矽薄層可具有以玻璃層壓程序處理過的正面，如上文針對第5圖所述。在正面處理之後，可修整金屬箔的延伸區域(操作區域)。
依據方塊710，可形成從金屬箔至射極區的接觸。如上文針對第6圖所述，所形成的接觸可包括至P摻雜射極區104的第一組接觸604及至N摻雜射 極區106的第二組接觸606。此外，指狀分離608圖案可形成在箔上，以電隔離第一組與第二組接觸。
在一替代實施例中，取代將連續金屬箔層黏附至背面，並隨後在箔附接至背面時產生指狀分離圖案，在將金屬箔施加至矽薄層的背面之前，指狀分離圖案可預先形成在金屬箔中。第8圖為根據本發明之一實施例之製造薄矽太陽能電池之替代方法800的流程圖，其使用這一類預先圖案化的金屬箔。
如第8圖所示，在依據方塊704從晶圓劈開薄矽薄層之後，可將預先圖案化的金屬箔夾在806矽薄層背面及次要基材中間。金屬箔的圖案化達成P型及N型接觸間的指狀分離。次要基材可為透明，以致雷射光可透射通過。次要基材可為例如硬性聚合物層，例如，聚對苯二甲酸乙二酯(PET)層或氟聚合物層。其後，依據方塊807，接觸可形成在金屬箔及射極區之間。接觸的形成可使用例如脈衝雷射來實現，脈衝雷射係透射通過次要基材產生接觸開口，並使熔化的金屬從箔流入那些開口。依據方塊708，可接著處理正面，如上文針對第7圖所述。在正面處理之後，可修整金屬箔的延伸區域(操作區域)。
第9圖為如根據第8圖之方法800製造之製成的薄矽太陽能電池的剖面圖。如第9圖所繪示，具有預先圖案化之指狀分離908的金屬箔306係夾在次要基材902及矽薄層302的背面中間。此外，顯示P型接觸904及N型接觸906。如上文所述，這些接觸可藉由使脈衝雷射透射通過透明的次要基材902來形成。
第10圖為根據本發明之一實施例之位於矽薄層背面上方之金屬箔的平面圖。第10圖的圖顯示薄層背面上方之箔部分1004以及延伸超過薄層周界1002之箔的延伸區域1006。須注意延伸區域1006可在周界之一或多個側邊的上方延伸，但不一定需要在周界之所有側邊的上方延伸。
第11圖為根據本發明之另一實施例之製造薄矽太陽能電池之方法1100的流程圖。在第11圖的例示性方法1100中，依據方塊1102，可在矽基材上形成犧牲層。
犧牲層可由例如在HF浴中以偏壓形成的多孔矽構成。或者，犧牲層可為例如鍺摻雜及/或碳摻雜的矽，兩種摻雜的任一種可藉由磊晶沈積或化學氣相沈積(CVD)程序來形成。犧牲層可薄，屬於接近700微米的等級，不過其可依據特定實施例的需要而稍微或顯著地更大或更小，以執行本文所述之功能。例如，在某些實施例中，犧牲層可薄如10微米。在某些例子中亦可使用較小的厚度。
依據方塊1104可接著在犧牲層上方生長矽磊晶層。依據方塊1106，射極區可形成在磊晶層中，且依據方塊1108，介電層可形成在射極區的上方。
依據方塊1110可接著將金屬箔黏附在射極區的上方。隨後可藉由選擇性濕蝕刻或以其他方式移除犧牲層來執行依據方塊1112之磊晶剝離。在剝離之後，磊晶層變成太陽能電池的矽薄層。在程序中的這個時間點上，結構的剖面圖相當於第3圖所示的圖。如本文所公開，金屬箔提供矽薄層結構支撐及整合的載體功能。
隨後，依據方塊708可處理正面。依據方塊710可接著形成金屬箔及射極區之間的接觸。換言之，在依據方塊1110的磊晶剝離之後，可如上文針對第4圖至第6圖所述般地進行處理。
已公開用於使用金屬箔形成薄矽太陽能電池的技術。有利地，金屬箔可用作內建的載體，以用於在處理薄層正面的期間操作不那麼易碎的矽薄層。隨後，可再利用金屬箔在薄層背面上形成P型及N型射極接觸及金屬指狀。
雖然已提供本發明的特定實施例，須了解這些實施例係用於說明目的而非限制。在此項技術中具有普通技能者在閱讀此公開內容後當明白許多額外的實施例。

Claims (21)

  1. 一種製造一太陽能電池之方法，該方法包含：從一矽基材劈開一矽薄層，其中該矽薄層之一背面包括一P型摻雜區及一N型摻雜區；將一金屬箔設置在一次要基材與該矽薄層之該背面之間的位置；以及藉由透射通過該次要基材之一脈衝雷射形成在該金屬箔與該摻雜區之間之接觸。
  2. 如申請專利範圍第1項所述之方法，其中該金屬箔之一延伸區域延伸超過該矽薄層之周界，且進一步包含：使用該金屬箔作為用於操作該矽薄層之一整合載體。
  3. 如申請專利範圍第1項所述之方法，其中在該金屬箔與該摻雜區之間形成該接觸之步驟進一步包含：在該金屬箔及該P型摻雜區之間形成一第一組接觸；以及在該金屬箔及該N型摻雜區之間形成一第二組接觸。
  4. 如申請專利範圍第1項所述之方法，其進一步包含：在該金屬箔中形成一指狀分離圖案。
  5. 如申請專利範圍第4項所述之方法，其中該指狀分離圖案係在附接至該背面之前預先形成在該金屬箔中。
  6. 如申請專利範圍第5項所述之方法，其進一步包含：在附接至該背面之前，將該金屬箔附接至該次要基材，其中該次要基材對一雷射光為透明。
  7. 如申請專利範圍第1項所述之方法，其中該金屬箔係使用一黏著層附接至該背面。
  8. 如申請專利範圍第1項所述之方法，其中該金屬箔係附接至在該金屬箔及該矽基材之該背面間之一接觸點陣列之該背面。
  9. 如申請專利範圍第8項所述之方法，其中該接觸點係藉由點熔化該金屬箔來形成。
  10. 如申請專利範圍第1項所述之方法，其中該金屬箔包括鋁。
  11. 如申請專利範圍第1項所述之方法，其進一步包含：紋理化及鈍化該矽薄層之一正面，同時使用該金屬箔作為用於操作該矽薄層之一載體；以及封裝該矽薄層的該正面。
  12. 一種太陽能電池，其包括：一矽薄層；一P型摻雜區及一N型摻雜區，其係位於該矽薄層之一背面上；一金屬箔，係設置在一次要基材與該矽薄層之該背面之間的位置；一第一組接觸，其係位於該金屬箔及該P型摻雜區之間；以及一第二組接觸，其係位於該金屬箔及該N型摻雜區之間；其中，該第一組接觸與該第二組接觸係藉由透射通過該次要基材之一脈衝雷射而形成。
  13. 如申請專利範圍第12項所述之太陽能電池，其中該矽薄層具 有位於十及一百微米間之範圍內的厚度。
  14. 如申請專利範圍第12項所述之太陽能電池，其進一步包括：一黏著層，其係介於該金屬箔及位於該矽薄層的該背面上之該P型摻雜區和該N型摻雜區之間，其中該第一接觸與該第二接觸穿過該黏著層中的開口。
  15. 如申請專利範圍第12項所述之太陽能電池，其進一步包括：一接觸點，其係介於該金屬箔及位於該矽薄層的該背面之上之該P型摻雜區和該N型摻雜區之間。
  16. 如申請專利範圍第12項所述之太陽能電池，其進一步包括：一紋理化及鈍化的表面，其位於該矽薄層之一正面；一玻璃層，其位於該矽薄層之該正面的上方；以及一封裝材料，其介於該矽薄層的該正面及該玻璃層之間。
  17. 如申請專利範圍第12項所述之太陽能電池，其中該金屬箔包括鋁。
  18. 如申請專利範圍第17項所述之太陽能電池，其中該金屬箔包括Al-x%Si，其中x%位於從零百分比至三百分比的範圍內。
  19. 一種製造一太陽能電池之方法，該方法包含：將一金屬箔黏附於一次要基材與一矽基材之一背面之間，其中該矽基材之該背面包括一P型摻雜區及一N型摻雜區；從該矽基材之該背面分離一矽薄層；使用該金屬箔作為用於在處理該矽薄層之一正面的期間操作該矽薄層之一內建載體；以及 藉由透射通過該次要基材之一脈衝雷射形成在該金屬箔與該P型摻雜區及該N型摻雜區之間之接觸。
  20. 如申請專利範圍第19項所述之方法，其中分離該矽薄層係藉由磊晶剝離來執行。
  21. 如申請專利範圍第19項所述之方法，其中在該金屬箔與該P型摻雜區及該N型摻雜區之間形成該接觸之步驟進一步包含：在該金屬箔及該P型摻雜區之間形成一第一組金屬接觸；在該金屬箔及該N型摻雜區之間形成一第二組金屬接觸；以及在該第一組金屬接觸及該第二組金屬接觸間形成分離。
TW102122000A 2012-12-21 2013-06-20 薄矽太陽能電池的金屬箔輔助製造 TWI601303B (zh)

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