CN110047946B - 薄硅太阳能电池的金属箔辅助制造 - Google Patents

薄硅太阳能电池的金属箔辅助制造 Download PDF

Info

Publication number
CN110047946B
CN110047946B CN201811582191.1A CN201811582191A CN110047946B CN 110047946 B CN110047946 B CN 110047946B CN 201811582191 A CN201811582191 A CN 201811582191A CN 110047946 B CN110047946 B CN 110047946B
Authority
CN
China
Prior art keywords
metal foil
substrate
type emitter
solar cell
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811582191.1A
Other languages
English (en)
Other versions
CN110047946A (zh
Inventor
林承笵
加布里埃尔·哈利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maikesheng Solar Energy Co ltd
Original Assignee
Maikesheng Solar Energy Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maikesheng Solar Energy Co ltd filed Critical Maikesheng Solar Energy Co ltd
Priority to CN201811582191.1A priority Critical patent/CN110047946B/zh
Publication of CN110047946A publication Critical patent/CN110047946A/zh
Application granted granted Critical
Publication of CN110047946B publication Critical patent/CN110047946B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明的一个实施例涉及制造太阳能电池的方法。从硅基板割离出硅板(704)。所述硅板的背面包括所述P型掺杂区域(104)和N型掺杂区域(106)。将金属箔附接(706)到所述硅板的背面。所述金属箔可有利地用作内置载体，用于在处理所述硅板的正面期间抓握所述硅板。另一个实施例涉及包括硅板(302)的太阳能电池，所述硅板在背面上具有P型掺杂区域(104)和N型掺杂区域(106)。将金属箔(306)粘合到所述硅板的背面，并且在所述金属箔与所述掺杂区域之间形成触点((604)和(606))。本发明还公开了其他实施例、方面和特征。

Description

薄硅太阳能电池的金属箔辅助制造
本申请是基于申请日为2013年6月20日、申请号为2013800721390(国际申请号为PCT/US2013/046830)、题为“薄硅太阳能电池的金属箔辅助制造”的中国专利申请的分案申请。
技术领域
本文中所述主题的实施例整体涉及太阳能电池。更具体地讲，所述主题的实施例涉及太阳能电池制造方法和结构。
背景技术
太阳能电池是为人们所熟知的用于将太阳辐射转换成电能的装置。太阳能电池具有在正常工作期间面向太阳以收集太阳辐射的正面，以及与正面相对的背面。照射在太阳能电池上的太阳辐射产生可用于为外部电路(诸如负载)供电的电荷。
太阳能电池制造工艺通常包括涉及掩蔽、蚀刻、沉积、扩散和其他步骤的许多步骤。本发明的实施例提供有利的太阳能电池工艺。
发明内容
本发明的一个实施例涉及制造太阳能电池的方法。从硅基板割离出硅板。硅板的背面包括P型掺杂区域和N型掺杂区域。将金属箔附接到硅板的背面。该金属箔可有利地用作内置载体，用于在处理硅板的正面期间抓握硅板。
另一个实施例涉及包括硅板的太阳能电池，该硅板在背面上具有P型掺杂区域和N型掺杂区域。将金属箔附接到硅板的背面，并且在金属箔与掺杂区域之间形成触点。
另一个实施例涉及制造太阳能电池的方法，该方法包括将金属箔附接到硅基板的背面。然后可将硅板与硅基板的背面分离。将金属箔用作内置载体，用于在处理硅板的正面期间抓握硅板。
本领域的普通技术人员在阅读包括附图和权利要求书的本公开全文之后，本发明的这些和其他实施例、方面和特征对于他们而言将是显而易见的。
附图说明
结合以下附图考虑时，可通过参考具体实施方式和权利要求得到对主题的更完整理解，其中在所有这些附图中，相似标号指代类似元件。附图未按比例绘制。
图1-6为示意性地示出了根据本发明实施例的太阳能电池的制造的剖视图。
图7为根据本发明实施例的制造太阳能电池的方法的流程图。
图8为根据本发明的替代实施例的制造太阳能电池的方法的流程图。
图9为根据图8的方法制造的已制造太阳能电池的剖视图。
图10为根据本发明实施例的在硅板背面上方的金属箔的平面视图。
图11为根据本发明另一个实施例的制造薄硅太阳能电池的方法的流程图。
具体实施方式
在本发明中，提供了许多具体细节，例如设备、结构、材料和方法的例子，以提供对本发明实施例的全面理解。然而，所属领域的技术人员将认识到，可在不具有这些具体细节中的一个或多个具体细节的情况下实践本发明。在其他示例中，不显示或描述众所周知的细节以避免混淆本发明的方面。
本公开提供使用金属箔形成薄硅太阳能电池的技术。有利地，金属箔可用作内置载体，用于在处理硅板的正面期间抓握原本易碎的硅板。随后，金属箔可再用于形成到硅板背面上的P型发射极和N型发射极的金属指和触点。
图1-6为示意性地示出了根据本发明实施例的薄硅太阳能电池的制造的剖视图。图1示出硅基板102，其具有形成在其上的P型掺杂(P+)区域104和形成在基板102的背面上的N型掺杂(N+)区域106。在制造太阳能电池的语境中，P+掺杂区域和N+掺杂区域可被称为P型发射极和N型发射极。在图1所示的背触式太阳能电池中，发射极和对应的触点在太阳能电池的背面上。例如，可通过从掺杂剂源扩散掺杂剂来形成掺杂区域。
电介质层108可形成在背面上的P+区域和N+区域上方以实现电隔离、钝化、和/或其他目的。薄电介质层108可包含例如氧化硅和/或氮化硅。另选地，可利用除形成电介质层108之外的方式，诸如通过化学钝化来钝化发射极表面。
图1的太阳能电池结构可放置于离子注入设备中，该离子注入设备也被称为“离子注入机”。该注入机可用于将离子注入预定的注入深度202，如图2所描绘。离子可为氢离子(即质子)。在另选实施例中，可注入或与氢共同注入其他离子。例如，可代替氢离子注入氦离子，或可与氢离子共同注入氦离子。注入剂量在注入深度引入缺陷，使得在注入深度上方的平面硅板可与硅基板在注入深度下方的其余部分分离或剥离。注入的能量控制注入深度，并且因此控制剥离后薄硅基板的厚度。例如，注入的能量可被校准以割离出薄板，该薄板具有在10微米到100微米范围内的厚度。通过以升高的温度加热基板实现剥离。
如图3所描绘，可将金属箔306附接到硅板302背面上的电介质层108。金属箔306可为铝箔。为了促进将该金属箔用作硅板的载体，金属箔306的延伸区域(抓握区域)可延伸超过硅板302的周边。在示例性具体实施中，金属箔306的组合物可为Al-1％Si(99％的铝和1％的硅)，或更一般地为Al-x％Si，其中x％为从0％到3％。可为铝箔使用其他组合物。也可以使用除铝之外的金属箔，诸如银箔。
在一个实施例中，粘合剂层304可用于将金属箔306附接到硅板302的背面。粘合剂层304可为环氧树脂、硅氧烷、乙酸乙烯酯(EVA)薄层或施加于基板背面的其他封装材料薄层。在一个具体实施中，粘合剂层可为在附接前预先施加于金属箔的涂层。
在另选实施例中，可使用在金属箔306与基板的背面之间的接触点阵列将金属箔306附接到基板的背面。例如，可通过使用脉冲激光点熔金属箔，从而形成接触点。在该实施例中，不需要粘合剂层304。可通过将箔压平来去除箔下方的接触点之间的气隙。
如图4所描绘，使用金属箔作为内置载体或集成载体来支撑硅板，可随后将处于硅板302正面的表面402纹理化并且钝化。表面纹理化用于增强硅表面的吸光能力，并且表面钝化用于减少表面处的电荷复合。例如，可使用湿式表面蚀刻工艺实现表面纹理化。可通过化学钝化或其他方式实现表面钝化。
然后，可在硅板302的正面上执行玻璃封装工艺。图5示出使用封装材料503附接到正面的所得的玻璃层502。
如图6所示，随后可在硅板302的背面上执行另外的步骤。这些步骤包括在接触孔中形成金属触点604和606以分别电耦接至对应的P+区域104和N+区域106。第一组金属触点604可为从金属箔304到P+区域104，第二组金属触点606可从金属箔304到N+区域106形成。在一个实施例中，可使用基于激光的触点形成方法来形成金属触点604和606。在这种工艺中，激光扫描器可以使脉冲激光束可控制地扫过所制造的太阳能电池的背面。脉冲激光束可形成穿过粘合剂层304和电介质层108的接触开口，并且接触开口可由来自金属箔306的熔融金属填充。
此外，可在箔区域上形成指间隔608图案以将第一组金属触点604与第二组金属触点606电分离。指间隔608可被构造为使得形成触点的箔的指为互相交叉的。
图7为根据本发明实施例的制造薄硅太阳能电池的示例性方法700的流程图。在图7的示例性方法700中，在框702处，可首先在硅晶圆上形成发射极区。硅晶圆可具有数百微米或以上的厚度并且可被称为厚支撑晶圆。发射极区包括P掺杂区域和N掺杂区域两者并且可在晶圆的背面上形成，如图1所示。
在框704处，可从硅晶圆割离出薄硅板。例如，硅板可具有介于10微米与100微米之间的厚度。在一个具体实施中，可使用如关于图2所述的离子注入和剥离来执行割离。另选地，可通过从晶圆的正面剥落或蚀刻牺牲层来执行割离。
在框706处，可将金属箔附接到硅板，如以上关于图3所述。特别地，可将金属箔附接到硅板的背面。金属箔可具有介于50微米与1毫米之间的厚度以为薄硅板提供机械支撑。为了促进将该金属箔用作硅板的载体，金属箔的延伸区域(抓握区域)可延伸超过硅板的周边。在一个具体实施中，可通过使用激光在金属箔与硅板之间烧蚀出触点来实现附接。在另一个具体实施中，可使用涂覆在金属箔上的薄粘合剂层来实现附接。
在框708处，可将金属箔用作用于抓握硅板的集成载体，使得硅板的正面可被处理。正面的表面处理可包括纹理化和钝化，如以上关于图4所述。可通过例如将硅板浸泡在化学溶液中以将正表面蚀刻和钝化，从而实现表面纹理化和钝化。随后，金属箔支撑的硅板可具有使用玻璃层压步骤处理的正面，如以上关于图5所述。在正面处理之后，可修整金属箔的延伸区域(抓握区域)。
在框710处，可形成从金属箔到发射极区的触点。如以上关于图6所述，所形成的触点可包括到P掺杂发射极区104的第一组触点604和到N掺杂发射极区106的第二组触点606。此外，可在金属箔上形成指间隔608图案以将第一组触点与第二组触点电分离。
在另选实施例中，代替将连续金属箔层附接到背面以及随后在箔附接到背面时形成指间隔图案，可在将金属箔施加于硅板背面之前在金属箔中预先形成指间隔图案。图8为根据本发明实施例的使用这种预先图案化的金属箔制造薄硅太阳能电池的另选方法800的流程图。
如图8所示，在框704处将薄硅板从晶圆割离出来后，可将预先图案化的金属箔夹在806硅板的背面和第二基板之间。金属箔的图案化实现了P型触点与N型触点之间的指分隔。第二基板可为透明的以便激光可以透射穿过。第二基板可为例如刚性聚合物层，诸如聚对苯二甲酸乙二醇酯(PET)层或含氟聚合物层。然后，在框807处，可在金属箔与发射极区之间形成触点。可例如使用透射穿过第二基板的脉冲激光产生接触开口并将熔融金属从箔到流到这些开口中，来实现触点的形成。在框708处，随后可处理正表面，如关于图7所述。在正面处理之后，可修整金属箔的延伸区域(抓握区域)。
图9为根据图8的方法800制造的薄硅太阳能电池的剖视图。如图9所示，具有预先图案化的指间隔908的金属箔306被夹在第二基板902与硅板302的背面之间。此外，示出了P型触点904和N型触点906。如上所述，可由脉冲激光穿过透明第二基板902的透射来形成这些触点。
图10为根据本发明实施例的在硅板背面上方的金属箔的平面视图。图10的视图示出箔的在硅板背面上方的部分1004和箔的延伸超出硅板的周边1002的延伸区域1006。需注意，延伸区域1006可在周边的一个或多个侧面上延伸，但不必在周边的所有侧面上延伸。
图11为根据本发明另一个实施例的制造薄硅太阳能电池的方法1100的流程图。在图11的示例性方法1100中，在框1102处，可在硅基板上形成牺牲层。
牺牲层可由多孔硅构成，诸如在具有偏置的氢氟酸浴中形成。另选地，牺牲层可为具有例如锗掺杂和/或碳掺杂的硅，所述锗掺杂和/或碳掺杂的硅中的任一者可通过外延沉积或化学气相沉积(CVD)工艺形成。牺牲层可为薄的，大约700微米的量级，然而其可略微地或显著地更大或更小，根据实现本文描述的功能的特定实施例所需而定。例如，在某些实施例中，牺牲层可为10微米那样薄。在某些情况下也可使用较小的厚度。
在框1104处，可随后在牺牲层上方生长硅外延层。在框1106处，可在外延层中形成发射极区，在框1108处，可在发射极区上方形成电介质层。
在框1110处，可随后在发射极区上方附接金属箔。随后，在框1112处，可通过选择性地湿式蚀刻或以其他方式移除牺牲层来执行外延剥离。剥离后，外延层变为太阳能电池的硅板。该工艺中此时的结构的剖视图对应于图3所示的视图。如本文所公开，金属箔为硅板提供结构支撑和集成的载体功能。
随后，在框708处，可处理正面。在框710处，随后在金属箔与发射极区之间形成触点。换句话讲，在框1110处的外延剥离后，可如上关于图4-6所述继续进行处理。
已经公开了使用金属箔形成薄硅太阳能电池的技术。有利地，金属箔可用作内置载体，用于在处理硅板的正面期间抓握原本易碎的硅板。随后，金属箔可再用于形成硅板背面上的P型和N型发射极触点和金属指。
虽然已提供了本发明的具体实施例，但是应当理解，这些实施例是用于举例说明的目的，而不用于限制。通过阅读本发明，许多另外的实施例对于本领域的普通技术人员而言将是显而易见的。

Claims (8)

1.一种太阳能电池，包括：
基板，其具有在正常工作期间面向太阳的正面以及与所述正面相对的背面；
位于所述基板的正面上的封装材料层；
位于所述封装材料层上的透明层；
位于所述基板的背面上的P型发射极和N型发射极；
位于所述P型发射极和所述N型发射极上的第一电介质层；
金属箔，其具有穿过所述第一电介质层电连接至所述P型发射极的第一接触点和穿过所述第一电介质层电连接至所述N型发射极的第二接触点；以及
粘合剂层，其将所述金属箔粘合到所述第一电介质层，
其中，所述金属箔延伸超过所述基板的周边，用于在所述基板的正面的处理期间抓握所述基板，并且所述金属箔的延伸超过所述基板的周边的部分在所述基板的正面的处理之后被修整，并且
其中，在所述第一电介质层和所述粘合剂层中使用脉冲激光产生接触开口，并且所述接触开口由来自所述金属箔的熔融金属填充以形成所述第一接触点和所述第二接触点。
2.根据权利要求1所述的太阳能电池，其中所述粘合剂层包括环氧树脂。
3.根据权利要求1所述的太阳能电池，其中所述透明层包括玻璃。
4.根据权利要求1所述的太阳能电池，其中所述基板的正面被纹理化。
5.根据权利要求1所述的太阳能电池，其中所述基板包括硅。
6.根据权利要求1所述的太阳能电池，其中所述金属箔包括铝。
7.一种太阳能电池，包括：
第一基板，其具有在正常工作期间面向太阳的正面以及与所述正面相对的背面；
位于所述第一基板的背面上的P型发射极和N型发射极；
位于所述P型发射极和所述N型发射极上的第一电介质层；
位于所述第一电介质层上的金属箔，所述金属箔具有穿过所述第一电介质层电连接至所述P型发射极的第一接触指和穿过所述第一电介质层电连接至所述N型发射极的第二接触指；以及
位于所述金属箔上的第二基板，
其中，所述金属箔包括位于所述第一电介质层与所述第二基板之间的指间隔区域，并且
其中，所述金属箔包括延伸超过所述第一基板的周边的延伸区域，用于在所述第一基板的正面的处理期间抓握所述第一基板，并且所述延伸区域在所述第一基板的正面的处理之后被修整，并且
其中，在所述第一电介质层中使用透射穿过所述第二基板的脉冲激光产生接触开口，并且所述接触开口由来自所述金属箔的熔融金属填充，以在所述金属箔与所述P型发射极和所述N型发射极之间形成触点。
8.根据权利要求7所述的太阳能电池，其中所述第一基板是硅板。
CN201811582191.1A 2012-12-21 2013-06-20 薄硅太阳能电池的金属箔辅助制造 Active CN110047946B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811582191.1A CN110047946B (zh) 2012-12-21 2013-06-20 薄硅太阳能电池的金属箔辅助制造

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/725,580 2012-12-21
US13/725,580 US9812592B2 (en) 2012-12-21 2012-12-21 Metal-foil-assisted fabrication of thin-silicon solar cell
CN201380072139.0A CN104981910B (zh) 2012-12-21 2013-06-20 薄硅太阳能电池的金属箔辅助制造
PCT/US2013/046830 WO2014098988A1 (en) 2012-12-21 2013-06-20 Metal-foil-assisted fabrication of thin-silicon solar cell
CN201811582191.1A CN110047946B (zh) 2012-12-21 2013-06-20 薄硅太阳能电池的金属箔辅助制造

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380072139.0A Division CN104981910B (zh) 2012-12-21 2013-06-20 薄硅太阳能电池的金属箔辅助制造

Publications (2)

Publication Number Publication Date
CN110047946A CN110047946A (zh) 2019-07-23
CN110047946B true CN110047946B (zh) 2023-05-16

Family

ID=50973257

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201380072139.0A Active CN104981910B (zh) 2012-12-21 2013-06-20 薄硅太阳能电池的金属箔辅助制造
CN201811582191.1A Active CN110047946B (zh) 2012-12-21 2013-06-20 薄硅太阳能电池的金属箔辅助制造

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201380072139.0A Active CN104981910B (zh) 2012-12-21 2013-06-20 薄硅太阳能电池的金属箔辅助制造

Country Status (8)

Country Link
US (3) US9812592B2 (zh)
JP (3) JP6283037B2 (zh)
KR (3) KR20200119896A (zh)
CN (2) CN104981910B (zh)
DE (1) DE112013006103T5 (zh)
MY (1) MY181191A (zh)
TW (1) TWI601303B (zh)
WO (1) WO2014098988A1 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9812592B2 (en) * 2012-12-21 2017-11-07 Sunpower Corporation Metal-foil-assisted fabrication of thin-silicon solar cell
US9666739B2 (en) * 2013-06-28 2017-05-30 Sunpower Corporation Photovoltaic cell and laminate metallization
US20160163901A1 (en) * 2014-12-08 2016-06-09 Benjamin Ian Hsia Laser stop layer for foil-based metallization of solar cells
US9461192B2 (en) 2014-12-16 2016-10-04 Sunpower Corporation Thick damage buffer for foil-based metallization of solar cells
US9997651B2 (en) * 2015-02-19 2018-06-12 Sunpower Corporation Damage buffer for solar cell metallization
US10396235B2 (en) * 2015-10-16 2019-08-27 Sunpower Corporation Indentation approaches for foil-based metallization of solar cells
US20170162723A1 (en) * 2015-12-03 2017-06-08 David Fredric Joel Kavulak Spot-welded and adhesive-bonded interconnects for solar cells
KR101910642B1 (ko) 2016-01-28 2018-12-28 엘지전자 주식회사 태양 전지 및 그 제조 방법
US11424373B2 (en) * 2016-04-01 2022-08-23 Sunpower Corporation Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells
DE102016107802A1 (de) * 2016-04-27 2017-11-02 Universität Stuttgart Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium
US10290763B2 (en) 2016-05-13 2019-05-14 Sunpower Corporation Roll-to-roll metallization of solar cells
DE102016115355A1 (de) * 2016-08-18 2018-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Anheften einer metallischen Folie an eine Oberfläche eines Halbleitersubstrats und Halbleiterbauelement mit einer metallischen Folie
US9670061B1 (en) 2016-09-12 2017-06-06 International Business Machines Corporation Flexible electronics for wearable healthcare sensors
EP3525244A1 (en) 2018-02-08 2019-08-14 Université de Strasbourg Silicon layer on silicon-rich aluminum layer
KR102498522B1 (ko) * 2018-03-15 2023-02-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 화합물 반도체 태양전지 및 이의 제조 방법
CN112424956A (zh) 2018-04-06 2021-02-26 太阳能公司 使用激光束对半导体基板进行局部金属化
US20210193852A1 (en) * 2019-12-20 2021-06-24 Sunpower Corporation Subtractive metallization for solar cells

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321299A (en) 1977-09-15 1982-03-23 Nasa Strong thin membrane structure for use as solar sail comprising substrate with reflective coating on one surface and an infra red emissivity increasing coating on the other surface
US7732243B2 (en) 1995-05-15 2010-06-08 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
JPH11214720A (ja) * 1998-01-28 1999-08-06 Canon Inc 薄膜結晶太陽電池の製造方法
JP2006066762A (ja) * 2004-08-30 2006-03-09 Canon Inc フレキシブル太陽電池モジュール及びその施工方法
JP4993333B2 (ja) * 2004-12-21 2012-08-08 富士機械製造株式会社 光発電パネルの製造方法
JP2008066316A (ja) * 2004-12-27 2008-03-21 Naoetsu Electronics Co Ltd 裏面接合型太陽電池及びその製造方法
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
JP2006310389A (ja) * 2005-04-26 2006-11-09 Sharp Corp 太陽電池の製造方法
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US20070137692A1 (en) * 2005-12-16 2007-06-21 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells
KR20080109778A (ko) 2006-03-13 2008-12-17 나노그램 코포레이션 얇은 실리콘 또는 게르마늄 시트 및 얇은 시트로 형성된 광전지
US7795600B2 (en) * 2006-03-24 2010-09-14 Goldeneye, Inc. Wavelength conversion chip for use with light emitting diodes and method for making same
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
EP2100336A4 (en) 2006-12-22 2013-04-10 Applied Materials Inc INTERCONNECTION TECHNOLOGIES FOR REAR CONTACT SOLAR CELLS AND MODULES
JP5048380B2 (ja) * 2007-04-09 2012-10-17 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
JP2009014791A (ja) * 2007-06-29 2009-01-22 Brother Ind Ltd 光走査装置及び画像表示装置及び網膜走査型画像表示装置
US20110017263A1 (en) 2007-09-05 2011-01-27 Solaria Corporation Method and device for fabricating a solar cell using an interface pattern for a packaged design
JP5252472B2 (ja) * 2007-09-28 2013-07-31 シャープ株式会社 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール
JP2009088203A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール及び太陽電池の製造方法
JP2009130116A (ja) * 2007-11-22 2009-06-11 Sharp Corp 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール
JP2009130118A (ja) * 2007-11-22 2009-06-11 Sharp Corp 半導体装置およびその製造方法ならびに太陽電池
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
JP5152858B2 (ja) * 2008-08-22 2013-02-27 シャープ株式会社 太陽電池モジュールおよびその製造方法
JP5380546B2 (ja) 2008-11-26 2014-01-08 マイクロリンク デバイセズ， インク． エミッタ層に接触する裏面バイアを備えた太陽電池
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
CN102318078B (zh) * 2008-12-10 2013-10-30 应用材料公司 用于网版印刷图案对准的增强型检视系统
EP2359407A4 (en) 2008-12-16 2013-03-13 Solopower Inc METHODS OF MANUFACTURING AND STRUCTURES OF THIN FILM PHOTOVOLTAIC MODULE
EP2412030A2 (en) * 2009-03-26 2012-02-01 BP Corporation North America Inc. Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions
US20100294349A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes
US8247243B2 (en) * 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
DE102009022378B4 (de) 2009-05-23 2013-02-07 Solarion Ag Photovoltaik Verfahren zur Herstellung von teiltransparenten flexiblen Dünnschichtsolarzellen und teiltransparente flexible Dünnschichtsolarzelle
JP2011003724A (ja) * 2009-06-18 2011-01-06 Sanyo Electric Co Ltd 太陽電池モジュール
DE102010004112A1 (de) * 2009-06-29 2010-12-30 Bosch Solar Energy Ag Verfahren zur Herstellung eines folienartigen elektrischen Verbinders für Solarzellen, derartig hergestelltes Verbindungselement sowie Verfahren zum elektrischen Verbinden von mindestens zwei Solarzellen zu einem Solarmodul
KR101070071B1 (ko) * 2009-09-16 2011-10-04 삼성전기주식회사 후면 전극형 태양전지 제조방법
TW201210058A (en) * 2010-05-12 2012-03-01 Applied Materials Inc Method of manufacturing crystalline silicon solar cells using epitaxial deposition
WO2012012806A2 (en) 2010-07-23 2012-01-26 Gigasi Solar, Inc. Thin film solar cells and other devices, systems and methods of fabricating same, and products produced by processes thereof
MY158500A (en) * 2010-08-05 2016-10-14 Solexel Inc Backplane reinforcement and interconnects for solar cells
WO2012021750A1 (en) * 2010-08-11 2012-02-16 Crystal Solar, Inc. Mwt architecture for thin si solar cells
US20120118369A1 (en) * 2010-10-15 2012-05-17 Justin Hedtke Solar cell architecture having a plurality of vias with shaped foil via interior
KR20120040016A (ko) 2010-10-18 2012-04-26 엘지전자 주식회사 태양 전지용 기판 및 태양 전지
KR20120050816A (ko) * 2010-11-11 2012-05-21 엘지전자 주식회사 태양 전지 모듈
JP5879754B2 (ja) * 2011-06-06 2016-03-08 凸版印刷株式会社 回路基板の製造方法
TWI497737B (zh) * 2010-12-02 2015-08-21 Au Optronics Corp 太陽能電池及其製造方法
US8586403B2 (en) * 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8486746B2 (en) * 2011-03-29 2013-07-16 Sunpower Corporation Thin silicon solar cell and method of manufacture
CN102832263B (zh) * 2011-06-15 2015-01-14 茂迪股份有限公司 具有背电场结构的太阳能电池及其制造方法
CN202608172U (zh) * 2012-03-27 2012-12-19 浙江华正新材料股份有限公司 应用于背场钝化型太阳能电池的背板
US9812592B2 (en) * 2012-12-21 2017-11-07 Sunpower Corporation Metal-foil-assisted fabrication of thin-silicon solar cell

Also Published As

Publication number Publication date
US9812592B2 (en) 2017-11-07
TWI601303B (zh) 2017-10-01
JP6612906B2 (ja) 2019-11-27
KR102072262B1 (ko) 2020-01-31
JP2018082212A (ja) 2018-05-24
KR102333503B1 (ko) 2021-12-01
MY181191A (en) 2020-12-21
CN104981910A (zh) 2015-10-14
JP6283037B2 (ja) 2018-02-21
TW201427059A (zh) 2014-07-01
KR20200012029A (ko) 2020-02-04
US20210175375A1 (en) 2021-06-10
DE112013006103T5 (de) 2015-09-17
WO2014098988A1 (en) 2014-06-26
US20140174519A1 (en) 2014-06-26
CN110047946A (zh) 2019-07-23
US20180033894A1 (en) 2018-02-01
JP2020031228A (ja) 2020-02-27
KR20200119896A (ko) 2020-10-20
CN104981910B (zh) 2019-01-18
KR20150097648A (ko) 2015-08-26
JP2016502283A (ja) 2016-01-21
JP6831964B2 (ja) 2021-02-24

Similar Documents

Publication Publication Date Title
CN110047946B (zh) 薄硅太阳能电池的金属箔辅助制造
US5637510A (en) Method for fabricating solar cell
EP2528105A2 (en) Method for fabricating a back contact solar cell
US9070804B2 (en) Back contact sliver cells
WO2003003434A1 (fr) Procede pour produire un film fin semi-conducteur et une pile solaire
KR20050113177A (ko) 개선된 광전지 및 그 제조
KR20160061338A (ko) 향상된 다공화
KR20160061369A (ko) 수분 장벽을 가진 에피택셜 규소 태양 전지
KR101474008B1 (ko) 플라즈마 표면 처리를 이용한 태양전지의 제조방법
CN111066155B (zh) 太阳能电池元件及太阳能电池模块
TW201440235A (zh) 具有加強射極層之背接面太陽能電池
JPH114008A (ja) 薄膜太陽電池の製造方法
US8921686B2 (en) Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element
CN109673170B (zh) 太阳能电池元件
RU2354008C1 (ru) Способ изготовления фотоэлектрического преобразователя
US8148189B2 (en) Formed ceramic receiver element adhered to a semiconductor lamina
KR101437162B1 (ko) 플라즈마 표면 처리를 이용한 태양전지의 제조방법
JP5452535B2 (ja) 太陽電池の製造方法
JP2006135017A (ja) 光電変換装置およびその製造方法
KR101453086B1 (ko) 태양전지의 제조방법
CN115836398A (zh) 太阳能电池的制造
CN115810690A (zh) 通过边缘涂层分离太阳能电池
US9293623B2 (en) Techniques for manufacturing devices
JPH04192474A (ja) 太陽電池の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20220831

Address after: Singapore, Singapore City

Applicant after: Maikesheng solar energy Co.,Ltd.

Address before: California, USA

Applicant before: SUNPOWER Corp.

GR01 Patent grant
GR01 Patent grant