TW201427059A - 薄矽太陽能電池的金屬箔輔助製造 - Google Patents
薄矽太陽能電池的金屬箔輔助製造 Download PDFInfo
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- 239000011888 foil Substances 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010703 silicon Substances 0.000 title abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 96
- 229910052715 tantalum Inorganic materials 0.000 claims description 52
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 33
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- 238000000926 separation method Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000007943 implant Substances 0.000 description 10
- -1 hydrogen ions Chemical class 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
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- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000006388 chemical passivation reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
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- 238000004299 exfoliation Methods 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 210000002435 tendon Anatomy 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
一實施例係關於製造太陽能電池的方法。從矽基材劈開矽薄層。矽薄層的背面包括P型及N型摻雜區。將金屬箔附接至矽薄層的背面。在處理矽薄層之正面期間，金屬箔可有利地用作為操作矽薄層之內建載體。另一實施例係關於太陽能電池，其包括在背面上具有P型及N型摻雜區的矽薄層。將金屬箔黏附至該薄層背面，並在金屬箔及摻雜區之間形成接觸。亦公開其他實施例、實施態樣及特徵。
Description
本文所述的專利標的之實施例大致係關於太陽能電池。更具體而言，本專利標的之實施例係關於太陽能電池的製造程序及結構。
眾所皆知太陽能電池為將太陽輻射轉換成電能的裝置。太陽能電池具有在正規操作期間面向太陽以收集太陽輻射的正面；及相對於正面的背面。撞擊在太陽能電池上的太陽輻射產生電荷，其可用來供能給例如負載之外部電路。
太陽能電池的製造程序一般包括眾多步驟，其包含遮罩、蝕刻、沈積、擴散及其他步驟。本發明的實施例提供有利的太陽能電池程序。
一實施例係關於製造太陽能電池的方法。從矽基材劈開矽薄層(silicon lamina)。矽薄層的背面包括P型及N型摻雜區。將金屬箔附接至矽薄層的背面。該金屬箔可有利地用作為用於在處理該矽薄層之正面的期間操作該矽薄層之內建載體。
另一實施例係關於包括在背面上具有P型及N型摻雜區的矽薄層之太陽能電池。金屬箔係黏附至薄層背面，且接觸係形成在金屬箔及摻雜區之間。
另一實施例係關於製造太陽能電池的方法，其包含將金屬箔黏附至矽基材的背面。可接著從矽基材的背面分離矽薄層。使用金屬箔作為內建載體，以用於在處理矽薄層之正面的期間操作該矽薄層。
一旦閱讀包括伴隨圖式及申請專利範圍之此公開內容的全文，在此項技術中具有通常知識者當能立即明白本發明的這些實施例及其他實施例、實施態樣及特徵。
102．．．矽基材
104．．．P型摻雜(P+)區
106．．．N型摻雜(N+)區
108．．．介電層
202．．．佈植深度
302．．．矽薄層
304．．．黏著層
306．．．金屬箔
402．．．表面
502．．．玻璃層
503．．．封裝材料
604、606．．．金屬接觸
608、908．．．指狀分離
700、800、1100．．．方法
702、704、706、708、710、806、807、1102、1104、1106、1108、1110、1112．．．方塊
902．．．次要基材
904．．．P型接觸
906．．．N型接觸
1002．．．薄層周界
1004．．．箔部分
1006．．．延伸區域
可同時參考詳細說明及申請專利範圍並搭配以下圖式以對本申請標的有更完整的了解，通篇圖式中的類似元件符號係指類似元件。圖式並未依比例繪製。
第1圖至第6圖為根據本發明之一實施例，概略地繪示太陽能電池製造之剖面圖。
第7圖為根據本發明之一實施例之製造太陽能電池之方法的流程圖。
第8圖為根據本發明之一替代實施例之製造太陽能電池之方法的流程圖。
第9圖為如根據第8圖 之方法製造所製成的太陽能電池的剖面圖。
第10圖為根據本發明之一實施例之位於矽薄層背面上方之金屬箔的平面圖。
第11圖為根據本發明之另一實施例之製造薄矽太陽能電池之方法的流程圖。
在本公開內容中，提供眾多具體細節，例如，設備、結構、材料及方法的實例，以提供對本發明之實施例的徹底了解。然而，在此項技術中具有通常知識者當了解，本發明可在無一或多個該具體細節的情況下實行。在其他例子中，眾所周知的細節並未顯示或敘述，以避免使本發明的實施態樣難以理解。
本公開內容提供用於使用金屬箔形成薄矽太陽能電池的技術。有利地，金屬箔可用作為用於在處理薄層正面的期間操作不那麼易碎的矽薄層之內建的載體。隨後，可再利用金屬箔在薄層背面上形成金屬指狀及對P型及N型射極的接觸。
第1圖 至第6圖為根據本發明之一實施例，概略地繪示薄矽太陽能電池製造的剖面圖。第1 圖顯示矽基材102，其具有形成在其上的P型摻雜(P+)區104及形成在基材102之背面上的N型摻雜(N+)區106。P+及N+摻雜區在所製造之太陽能電池的背景下可稱為P型及N型射極。在第1圖所示之背面接觸式太陽能電池中，射極及對應的接觸係位於太陽能電池的背面之上。摻雜區可例如藉由從摻質源擴散摻質來形成。
可在背面上之P+及N+區的上方形成薄介電層108，以用於電絕緣、鈍化及/或其他目的。介電層108可包括例如氧化矽及/或氮化矽。或者，射極表面可藉由除了形成介電層108外的其他手段來鈍化，例如藉由化學鈍化。
第1 圖的太陽能電池結構可放置在離子佈植工具中，離子佈植工具亦稱為「離子佈植器」。佈植器可用以於預定的佈植深度202佈植離子，如第2圖所繪示。離子可為氫離子(亦即，質子)。在替代實施例中，可佈植其他離子或將其他離子與氫共同佈植。例如，可以氦離子取代氫離子佈植或可讓氦離子與氫離子共同佈植。佈植的劑量在佈植深度處造成缺陷，以致佈植深度之上的平面薄層可從佈植深度下方之剩餘的矽基材分離或剝落。佈植能量控制佈植深度，且因此控制剝落之後的薄矽基材厚度。例如，佈植能量可校準為劈開具有於從10微米至100微米之範圍內的厚度的薄層。剝落可藉由以升高溫度加熱基材來實現。
如第3圖所繪示，金屬箔306 可黏附至在矽薄層302 背面上的介電層108。金屬箔306 可為鋁箔。為了幫助用作為用於薄層的載體之箔，金屬箔306之延伸區域( 操作區域)可延伸超過矽薄層302的周界。在一例示性的實施方式中，金屬箔306的組成物可為Al-1%Si(99% 鋁及1%矽) 或更通常的係Al-x%Si，其中x%是從0%至3%。可使用用於鋁箔的其他組成物。亦可使用除了鋁之外的金屬箔，例如銀箔。
在一實施例中，黏著層304可用來將金屬箔306黏附至矽薄層302的背面。黏著層304可為環氧樹脂、矽氧樹脂、乙烯乙酸乙烯酯(EVA) 或其他封裝材料的薄層，其係施加至基材的背面。在一實施方式中，黏著層可為在黏附前預先施加至金屬箔之塗層。
在一替代實施例中，金屬箔306可利用在金屬箔306及基材背面間之接觸點陣列來黏附至基材背面。接觸點可藉由使用例如脈衝雷射來讓金屬箔點熔化而形成。在此實施例中，不需要黏著層304。箔下方介於接觸點間的氣隙可藉由平坦化箔來移除。
如第4圖所繪示，使用箔作為內建或整合的載體來支撐薄層，位於薄層302正面的表面402於後可經紋理化及鈍化。表面紋理化的作用是為了增加矽表面吸收光的容量，而表面鈍化的作用是為了減少表面的電荷再結合。表面紋理化可使用例如濕式表面蝕刻程序來實現。表面鈍化可藉由化學鈍化或藉由其他手段來實現。
其後，可在矽薄層302的正面上執行玻璃封裝程序。第5圖顯示所得的玻璃層502，其係使用封裝材料503附接至正面。
如第6圖所示，可接著在矽薄層302的背面上執行進一步的步驟。這些步驟包括在接觸孔中形成金屬接觸604及606，以分別電耦合至對應的P+區104及N+區106。第一組金屬接觸604可自金屬箔304至P+區104，且第二組金屬接觸606可形成為自金屬箔304 至N+區106。在一實施例中，金屬接觸604及606可使用以雷射為主的接觸形成程序來形成。在這一類程序中，可使雷射掃描器可控地掃描脈衝雷射束橫跨所製造之太陽能電池的背面。脈衝雷射束可形成通過黏著層304及介電層108的接觸開口，且接觸開口可藉由熔化來自箔306的金屬而填充。
此外，指狀分離608圖案可形成在箔區域，以電隔離第一組金屬接觸604與第二組金屬接觸606。指狀分離608可配置以使引導接觸之箔的指狀為交叉指形。
第7圖為根據本發明之一實施例之製造薄矽太陽能電池之例示性方法700的流程圖。在第7圖的例示性方法700中，依據方塊702，射極區可首先形成矽晶圓上。矽晶圓可具有數百微米或更多的厚度，並可稱為厚操作晶圓。射極區包括P 摻雜及N摻雜區兩者，並可如第1圖所示形成在晶圓的背面上。
依據方塊704，薄矽薄層可自矽晶圓劈開。例如，矽薄層可具有介於10微米至100微米之間的厚度。在一實施方式中，劈開可使用離子佈植來執行，並如上文針對第2圖所述般地剝落。或者，劈開可藉由從晶圓正面散裂或蝕刻一犧牲層來執行。
在方塊706中，金屬箔可黏附至矽薄層，如上文針對第3圖所述。特別是，金屬箔可黏附至矽薄層的背面表面。金屬箔可具有介於50微米及1毫米之間的厚度，以便針對薄矽薄層提供機械支撐。為了幫助用作用於薄層載體的箔，金屬箔之一延伸區域(操作區域)可延伸超過矽薄層的周界。在一實施方式中，黏附可藉由使用雷射燒金屬箔及矽薄層之間的接觸來實現。在另一實施方式中，黏附可使用塗布在金屬箔上的薄黏著層來實現。
根據方塊708，金屬箔可用作用於操作矽薄層的整合載體，以便可處理矽薄層的正面表面。正面表面的處理可包括紋理化及鈍化，如上文針對第4圖所述。表面紋理化及鈍化可藉由例如將薄層浸漬在化學溶液中對正面表面進行蝕刻及鈍化來實現。隨後，受到金屬箔支撐的矽薄層可具有以玻璃層壓程序處理過的正面，如上文針對第5 圖所述。在正面處理之後，可修整金屬箔的延伸區域(操作區域) 。
依據方塊710，可形成從金屬箔至射極區的接觸。如上文針對第6圖所述，所形成的接觸可包括至P 摻雜射極區104的第一組接觸604及至N 摻雜射極區106的第二組接觸606。此外，指狀分離608圖案可形成在箔上，以電隔離第一組與第二組接觸。
在一替代實施例中，取代將連續金屬箔層黏附至背面，並隨後在箔附接至背面時產生指狀分離圖案，在將金屬箔施加至矽薄層的背面之前，指狀分離圖案可預先形成在金屬箔中。第8圖為根據本發明之一實施例之製造薄矽太陽能電池之替代方法800的流程圖，其使用這一類預先圖案化的金屬箔。
如第8圖所示，在依據方塊704從晶圓劈開薄矽薄層之後，可將預先圖案化的金屬箔夾在806矽薄層背面及次要基材中間。金屬箔的圖案化達成P型及N型接觸間的指狀分離。次要基材可為透明，以致雷射光可透射通過。次要基材可為例如硬性聚合物層，例如，聚對苯二甲酸乙二酯(PET)層或氟聚合物層。其後，依據方塊807，接觸可形成在金屬箔及射極區之間。接觸的形成可使用例如脈衝雷射來實現，脈衝雷射係透射通過次要基材產生接觸開口，並使熔化的金屬從箔流入那些開口。依據方塊708，可接著處理正面，如上文針對第7圖所述。在正面處理之後，可修整金屬箔的延伸區域(操作區域) 。
第9圖為如根據第8圖之方法800製造之製成的薄矽太陽能電池的剖面圖。如第9圖所繪示，具有預先圖案化之指狀分離908的金屬箔306 係夾在次要基材902及矽薄層302的背面中間。此外，顯示P型接觸904及N型接觸906。如上文所述，這些接觸可藉由使脈衝雷射透射通過透明的次要基材902來形成。
第10圖為根據本發明之一實施例之位於矽薄層背面上方之金屬箔的平面圖。第10圖的圖顯示薄層背面上方之箔部分1004以及延伸超過薄層周界1002之箔的延伸區域1006 。須注意延伸區域1006可在周界之一或多個側邊的上方延伸，但不一定需要在周界之所有側邊的上方延伸。
第11圖為根據本發明之另一實施例之製造薄矽太陽能電池之方法1100的流程圖。在第11圖的例示性方法1100中，依據方塊1102，可在矽基材上形成犧牲層。
犧牲層可由例如在HF浴中以偏壓形成的多孔矽構成。或者，犧牲層可為例如鍺摻雜及/或碳摻雜的矽，兩種摻雜的任一種可藉由磊晶沈積或化學氣相沈積(CVD)程序來形成。犧牲層可薄，屬於接近700微米的等級，不過其可依據特定實施例的需要而稍微或顯著地更大或更小，以執行本文所述之功能。例如，在某些實施例中，犧牲層可薄如10微米。在某些例子中亦可使用較小的厚度。
依據方塊1104可接著在犧牲層上方生長矽磊晶層。依據方塊1106，射極區可形成在磊晶層中，且依據方塊1108，介電層可形成在射極區的上方。
依據方塊1110可接著將金屬箔黏附在射極區的上方。隨後可藉由選擇性濕蝕刻或以其他方式移除犧牲層來執行依據方塊1112之磊晶剝離。在剝離之後，磊晶層變成太陽能電池的矽薄層。在程序中的這個時間點上，結構的剖面圖相當於第3圖所示的圖。如本文所公開，金屬箔提供矽薄層結構支撐及整合的載體功能。
隨後，依據方塊708可處理正面。依據方塊710可接著形成金屬箔及射極區之間的接觸。換言之，在依據方塊1110的磊晶剝離之後，可如上文針對第4圖至第6圖所述般地進行處理。
已公開用於使用金屬箔形成薄矽太陽能電池的技術。有利地，金屬箔可用作內建的載體，以用於在處理薄層正面的期間操作不那麼易碎的矽薄層。隨後，可再利用金屬箔在薄層背面上形成P型及N型射極接觸及金屬指狀。
雖然已提供本發明的特定實施例，須了解這些實施例係用於說明目的而非限制。在此項技術中具有普通技能者在閱讀此公開內容後當明白許多額外的實施例。
Claims (22)
- 一種製造一太陽能電池之方法，該方法包含：
從一矽基材劈開一矽薄層，其中該矽薄層之一背面包括一P型摻雜區及一N型摻雜區；以及將一金屬箔附接至該矽薄層的該背面。 - 如申請專利範圍第1項所述之方法，其中該金屬箔之一延伸區域延伸超過該矽薄層之周界，且進一步包含：使用該金屬箔作為用於操作該矽薄層之一整合載體。
- 如申請專利範圍第1項所述之方法，其進一步包含：
在該金屬箔及該P型摻雜區之間形成一第一組接觸；以及在該金屬箔及該N型摻雜區之間形成一第二組接觸。 - 如申請專利範圍第3項所述之方法，其中該第一組接觸與該第二組接觸係使用一脈衝雷射束形成。
- 如申請專利範圍第1項所述之方法，其進一步包含：在該金屬箔中形成一指狀分離圖案。
- 如申請專利範圍第5項所述之方法，其中該指狀分離圖案係在附接至該背面之前預先形成在該金屬箔中。
- 如申請專利範圍第6項所述之方法，其進一步包含：在附接至該背面之前，將該金屬箔附接至一次要基材，其中該次要基材對一雷射光為透明。
- 如申請專利範圍第1項所述之方法，其中該金屬箔係使用一黏著層附接至該背面。
- 如申請專利範圍第1項所述之方法，其中該金屬箔係附接至在該金屬箔及該矽基材之該背面間之一接觸點陣列之該背面。
- 如申請專利範圍第9項所述之方法，其中該接觸點係藉由點熔化該金屬箔來形成。
- 如申請專利範圍第1項所述之方法，其中該金屬箔包括鋁。
- 如申請專利範圍第1項所述之方法，其進一步包含：
紋理化及鈍化該矽薄層之一正面，同時使用該金屬箔作為用於操作該矽薄層之一載體；以及封裝該矽薄層的該正面。 - 一種太陽能電池，其包括：
一矽薄層；
一P型摻雜區及一N型摻雜區，其係位於該矽薄層之一背面上；
一金屬箔，其係黏附至該矽薄層之該背面；
一第一組接觸，其係位於該金屬箔及該P型摻雜區之間；以及一第二組接觸，其係位於該金屬箔及該N型摻雜區之間。 - 如申請專利範圍第13項所述之太陽能電池，其中該矽薄層具有位於十及一百微米間之範圍內的厚度。
- 如申請專利範圍第13項所述之太陽能電池，其進一步包括：一黏著層，其係介於該金屬箔及位於該矽薄層的該背面上之該P型摻雜區和該N型摻雜區之間，其中該第一接觸與該第二接觸穿過該黏著層中的開口。
- 如申請專利範圍第13項所述之太陽能電池，其進一步包括：一接觸點，其係介於該金屬箔及位於該矽薄層的該背面之上之該P型摻雜區和該N型摻雜區之間。
- 如申請專利範圍第13項所述之太陽能電池，其進一步包括：
一紋理化及鈍化的表面，其位於該矽薄層之一正面；
一玻璃層，其位於該矽薄層之該正面的上方；以及一封裝材料，其介於該矽薄層的該正面及該玻璃層之間。 - 如申請專利範圍第13項所述之太陽能電池，其中該金屬箔包括鋁。
- 如申請專利範圍第18項所述之太陽能電池，其中該金屬箔包括Al-x%Si，其中x% 位於從零百分比至三百分比的範圍內。
- 一種製造一太陽能電池之方法，該方法包含：
將一金屬箔黏附至一矽基材之一背面，其中該矽基材之該背面包括一P型摻雜區及一N型摻雜區；
從該矽基材之該背面分離一矽薄層；以及使用該金屬箔作為用於在處理該矽薄層之一正面的期間操作該矽薄層之一內建載體。 - 如申請專利範圍第20項所述之方法，其中分離該矽薄層係藉由磊晶剝離來執行。
- 如申請專利範圍第20項所述之方法，其進一步包含：
在該金屬箔及該P型摻雜區之間形成一第一組金屬接觸；
在該金屬箔及該N型摻雜區之間形成一第二組金屬接觸；以及在該第一組金屬接觸及該第二組金屬接觸間形成分離。
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| US9666739B2 (en) * | 2013-06-28 | 2017-05-30 | Sunpower Corporation | Photovoltaic cell and laminate metallization |
| US20160163901A1 (en) * | 2014-12-08 | 2016-06-09 | Benjamin Ian Hsia | Laser stop layer for foil-based metallization of solar cells |
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| US10396235B2 (en) | 2015-10-16 | 2019-08-27 | Sunpower Corporation | Indentation approaches for foil-based metallization of solar cells |
| US20170162723A1 (en) * | 2015-12-03 | 2017-06-08 | David Fredric Joel Kavulak | Spot-welded and adhesive-bonded interconnects for solar cells |
| KR101910642B1 (ko) * | 2016-01-28 | 2018-12-28 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
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| DE102016107802A1 (de) * | 2016-04-27 | 2017-11-02 | Universität Stuttgart | Verfahren zur Herstellung rückseitenkontaktierter Solarzellen aus kristallinem Silizium |
| US10290763B2 (en) * | 2016-05-13 | 2019-05-14 | Sunpower Corporation | Roll-to-roll metallization of solar cells |
| DE102016115355A1 (de) * | 2016-08-18 | 2018-02-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Anheften einer metallischen Folie an eine Oberfläche eines Halbleitersubstrats und Halbleiterbauelement mit einer metallischen Folie |
| US9670061B1 (en) * | 2016-09-12 | 2017-06-06 | International Business Machines Corporation | Flexible electronics for wearable healthcare sensors |
| EP3525244A1 (en) | 2018-02-08 | 2019-08-14 | Université de Strasbourg | Silicon layer on silicon-rich aluminum layer |
| KR102498522B1 (ko) * | 2018-03-15 | 2023-02-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 화합물 반도체 태양전지 및 이의 제조 방법 |
| EP3776670A4 (en) * | 2018-04-06 | 2021-05-05 | Sunpower Corporation | LASER-ASSISTED METALLIZATION PROCESS FOR SOLAR CELL STRING |
| US20210193852A1 (en) * | 2019-12-20 | 2021-06-24 | Sunpower Corporation | Subtractive metallization for solar cells |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4321299A (en) | 1977-09-15 | 1982-03-23 | Nasa | Strong thin membrane structure for use as solar sail comprising substrate with reflective coating on one surface and an infra red emissivity increasing coating on the other surface |
| US7732243B2 (en) | 1995-05-15 | 2010-06-08 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
| JPH11214720A (ja) * | 1998-01-28 | 1999-08-06 | Canon Inc | 薄膜結晶太陽電池の製造方法 |
| JP2006066762A (ja) * | 2004-08-30 | 2006-03-09 | Canon Inc | フレキシブル太陽電池モジュール及びその施工方法 |
| JP4993333B2 (ja) * | 2004-12-21 | 2012-08-08 | 富士機械製造株式会社 | 光発電パネルの製造方法 |
| JP2008066316A (ja) * | 2004-12-27 | 2008-03-21 | Naoetsu Electronics Co Ltd | 裏面接合型太陽電池及びその製造方法 |
| US7554031B2 (en) * | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
| JP2006310389A (ja) * | 2005-04-26 | 2006-11-09 | Sharp Corp | 太陽電池の製造方法 |
| US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| WO2007106502A2 (en) | 2006-03-13 | 2007-09-20 | Nanogram Corporation | Thin silicon or germanium sheets and photovoltaics formed from thin sheets |
| US7795600B2 (en) * | 2006-03-24 | 2010-09-14 | Goldeneye, Inc. | Wavelength conversion chip for use with light emitting diodes and method for making same |
| US7811900B2 (en) * | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
| WO2008080160A1 (en) | 2006-12-22 | 2008-07-03 | Advent Solar, Inc. | Interconnect technologies for back contact solar cells and modules |
| JP5048380B2 (ja) * | 2007-04-09 | 2012-10-17 | 信越化学工業株式会社 | 単結晶シリコン太陽電池の製造方法 |
| JP2009014791A (ja) * | 2007-06-29 | 2009-01-22 | Brother Ind Ltd | 光走査装置及び画像表示装置及び網膜走査型画像表示装置 |
| US20110017263A1 (en) | 2007-09-05 | 2011-01-27 | Solaria Corporation | Method and device for fabricating a solar cell using an interface pattern for a packaged design |
| JP2009088203A (ja) * | 2007-09-28 | 2009-04-23 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
| JP5252472B2 (ja) * | 2007-09-28 | 2013-07-31 | シャープ株式会社 | 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール |
| JP2009130116A (ja) * | 2007-11-22 | 2009-06-11 | Sharp Corp | 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール |
| JP2009130118A (ja) * | 2007-11-22 | 2009-06-11 | Sharp Corp | 半導体装置およびその製造方法ならびに太陽電池 |
| US8481845B2 (en) * | 2008-02-05 | 2013-07-09 | Gtat Corporation | Method to form a photovoltaic cell comprising a thin lamina |
| JP5152858B2 (ja) * | 2008-08-22 | 2013-02-27 | シャープ株式会社 | 太陽電池モジュールおよびその製造方法 |
| JP5380546B2 (ja) | 2008-11-26 | 2014-01-08 | マイクロリンク デバイセズ， インク． | エミッタ層に接触する裏面バイアを備えた太陽電池 |
| US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| CN102318078B (zh) * | 2008-12-10 | 2013-10-30 | 应用材料公司 | 用于网版印刷图案对准的增强型检视系统 |
| TW201036183A (en) | 2008-12-16 | 2010-10-01 | Solopower Inc | Thin film photovoltaic module manufacturing methods and structures |
| CN102428565A (zh) * | 2009-03-26 | 2012-04-25 | Bp北美公司 | 用于在热扩散掺杂区域中带有激光烧结接触的太阳能电池的设备和方法 |
| US20100294349A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
| US8247243B2 (en) * | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
| DE102009022378B4 (de) | 2009-05-23 | 2013-02-07 | Solarion Ag Photovoltaik | Verfahren zur Herstellung von teiltransparenten flexiblen Dünnschichtsolarzellen und teiltransparente flexible Dünnschichtsolarzelle |
| JP2011003724A (ja) * | 2009-06-18 | 2011-01-06 | Sanyo Electric Co Ltd | 太陽電池モジュール |
| DE102010004112A1 (de) * | 2009-06-29 | 2010-12-30 | Bosch Solar Energy Ag | Verfahren zur Herstellung eines folienartigen elektrischen Verbinders für Solarzellen, derartig hergestelltes Verbindungselement sowie Verfahren zum elektrischen Verbinden von mindestens zwei Solarzellen zu einem Solarmodul |
| KR101070071B1 (ko) * | 2009-09-16 | 2011-10-04 | 삼성전기주식회사 | 후면 전극형 태양전지 제조방법 |
| TW201210058A (en) * | 2010-05-12 | 2012-03-01 | Applied Materials Inc | Method of manufacturing crystalline silicon solar cells using epitaxial deposition |
| WO2012012806A2 (en) | 2010-07-23 | 2012-01-26 | Gigasi Solar, Inc. | Thin film solar cells and other devices, systems and methods of fabricating same, and products produced by processes thereof |
| WO2013055307A2 (en) * | 2010-08-05 | 2013-04-18 | Solexel, Inc. | Backplane reinforcement and interconnects for solar cells |
| WO2012021750A1 (en) * | 2010-08-11 | 2012-02-16 | Crystal Solar, Inc. | Mwt architecture for thin si solar cells |
| US20120118369A1 (en) * | 2010-10-15 | 2012-05-17 | Justin Hedtke | Solar cell architecture having a plurality of vias with shaped foil via interior |
| KR20120040016A (ko) | 2010-10-18 | 2012-04-26 | 엘지전자 주식회사 | 태양 전지용 기판 및 태양 전지 |
| KR20120050816A (ko) * | 2010-11-11 | 2012-05-21 | 엘지전자 주식회사 | 태양 전지 모듈 |
| JP5879754B2 (ja) * | 2011-06-06 | 2016-03-08 | 凸版印刷株式会社 | 回路基板の製造方法 |
| TWI497737B (zh) * | 2010-12-02 | 2015-08-21 | Au Optronics Corp | 太陽能電池及其製造方法 |
| US8586403B2 (en) * | 2011-02-15 | 2013-11-19 | Sunpower Corporation | Process and structures for fabrication of solar cells with laser ablation steps to form contact holes |
| US8486746B2 (en) * | 2011-03-29 | 2013-07-16 | Sunpower Corporation | Thin silicon solar cell and method of manufacture |
| CN102832263B (zh) * | 2011-06-15 | 2015-01-14 | 茂迪股份有限公司 | 具有背电场结构的太阳能电池及其制造方法 |
| CN202608172U (zh) * | 2012-03-27 | 2012-12-19 | 浙江华正新材料股份有限公司 | 应用于背场钝化型太阳能电池的背板 |
| US9812592B2 (en) * | 2012-12-21 | 2017-11-07 | Sunpower Corporation | Metal-foil-assisted fabrication of thin-silicon solar cell |
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| US9812592B2 (en) | 2017-11-07 |
| MY181191A (en) | 2020-12-21 |
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| JP2016502283A (ja) | 2016-01-21 |
| KR20150097648A (ko) | 2015-08-26 |
| CN110047946B (zh) | 2023-05-16 |
| TWI601303B (zh) | 2017-10-01 |
| WO2014098988A1 (en) | 2014-06-26 |
| JP6283037B2 (ja) | 2018-02-21 |
| CN110047946A (zh) | 2019-07-23 |
| JP2020031228A (ja) | 2020-02-27 |
| KR20200119896A (ko) | 2020-10-20 |
| JP6831964B2 (ja) | 2021-02-24 |
| JP2018082212A (ja) | 2018-05-24 |
| US20140174519A1 (en) | 2014-06-26 |
| DE112013006103T5 (de) | 2015-09-17 |
| CN104981910A (zh) | 2015-10-14 |
| US20210175375A1 (en) | 2021-06-10 |
| US20180033894A1 (en) | 2018-02-01 |
| CN104981910B (zh) | 2019-01-18 |
| KR102333503B1 (ko) | 2021-12-01 |
| JP6612906B2 (ja) | 2019-11-27 |
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