JP6612906B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP6612906B2 JP6612906B2 JP2018010846A JP2018010846A JP6612906B2 JP 6612906 B2 JP6612906 B2 JP 6612906B2 JP 2018010846 A JP2018010846 A JP 2018010846A JP 2018010846 A JP2018010846 A JP 2018010846A JP 6612906 B2 JP6612906 B2 JP 6612906B2
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- metal foil
- solar cell
- silicon
- thin film
- doped region
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- 239000011888 foil Substances 0.000 claims description 93
- 229910052751 metal Inorganic materials 0.000 claims description 90
- 239000002184 metal Substances 0.000 claims description 90
- 229910052710 silicon Inorganic materials 0.000 claims description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 85
- 239000010703 silicon Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 27
- 238000000926 separation method Methods 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000008393 encapsulating agent Substances 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 230000003796 beauty Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 58
- 238000000034 method Methods 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 9
- -1 hydrogen ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006388 chemical passivation reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/02—Details
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- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
[項目1]
太陽電池を製造する方法であって、
シリコン薄膜の裏側がP型ドープ領域及びN型ドープ領域を含む、前記シリコン薄膜をシリコン基板から劈開する工程と、
前記シリコン薄膜の前記裏側に金属箔を取り付ける工程と
を備える、方法。
[項目2]
前記金属箔の拡張領域が前記シリコン薄膜の外辺部を越えて延び、
前記金属箔を、前記シリコン薄膜を処理するための一体型キャリアとして使用する工程を更に備える、項目1に記載の方法。
[項目3]
前記金属箔と前記P型ドープ領域との間に接点の第1のセットを形成する工程と、
前記金属箔と前記N型ドープ領域との間に接点の第2のセットを形成する工程と、
を更に備える、項目1に記載の方法。
[項目4]
複数の前記接点がパルスレーザビームを使用して形成される、項目3に記載の方法。
[項目5]
前記金属箔内に指部分離パターンを形成する工程を更に備える、項目1に記載の方法。
[項目6]
前記裏側への取り付けの前に、前記指部分離パターンが前記金属箔内に予め形成される、項目5に記載の方法。
[項目7]
前記裏側への取り付けの前に前記金属箔を副基板に取り付ける工程を更に備え、
前記副基板は、レーザ光線に対して透過的である、項目6に記載の方法。
[項目8]
前記金属箔が接着層を使用して前記裏側に取り付けられる、項目1に記載の方法。
[項目9]
前記金属箔と前記シリコン基板の前記裏側との間の接触点のアレイにおいて前記金属箔が前記裏側に取り付けられる、項目1に記載の方法。
[項目9]
前記接触点が前記金属箔の点融解によって形成される、項目8に記載の方法。
[項目10]
前記金属箔がアルミニウムを含む、項目1に記載の方法。
[項目11]
前記金属箔を、前記シリコン薄膜を処理するためのキャリアとして使用しながら、前記シリコン薄膜の表側をテクスチャ加工及び不動態化する工程と、
前記シリコン薄膜の前記表側を封入する工程と、
を更に備える、項目1に記載の方法。
[項目12]
シリコン薄膜と、
前記シリコン薄膜の裏側のP型ドープ領域及びN型ドープ領域と、
前記シリコン薄膜の前記裏側に接着された金属箔と、
前記金属箔と前記P型ドープ領域との間の接点の第1のセットと、
前記金属箔と前記N型ドープ領域との間の接点の第2のセットと、
を備える、太陽電池。
[項目13]
前記シリコン薄膜が10〜100マイクロメートルの範囲内の厚みを有する、項目12に記載の太陽電池。
[項目14]
前記シリコン薄膜の前記裏側の前記金属箔と前記P型ドープ領域及び前記N型ドープ領域との間の接着層を更に備え、複数の前記接点が前記接着層内の複数の開口部を通過する、項目12に記載の太陽電池。
[項目15]
前記シリコン薄膜の前記裏側の前記金属箔と前記P型ドープ領域及び前記N型ドープ領域との間の複数の接触点を更に備える、項目12に記載の太陽電池。
[項目16]
前記シリコン薄膜の表側における、テクスチャ加工及び不動態化された表面と、
前記シリコン薄膜の前記表側を覆うガラス層と、
前記シリコン薄膜の前記表側と前記ガラス層との間の封入材料と、
を更に備える、項目12に記載の太陽電池。
[項目17]
前記金属箔がアルミニウムを含む、項目12に記載の太陽電池。
[項目18]
前記金属箔がAl−x%Siを含み、x%は0パーセント〜3パーセントの範囲内である、項目17に記載の太陽電池。
[項目19]
シリコン基板の裏側がP型ドープ領域及びN型ドープ領域を含む、金属箔を前記シリコン基板の前記裏側に接着する工程と、
シリコン薄膜を前記シリコン基板の前記裏側から分離する工程と、
前記シリコン薄膜の表側の処理中に前記シリコン薄膜を処理するための組込みキャリアとして前記金属箔を使用する工程と、
を備える、太陽電池の製造方法。
[項目20]
前記シリコン薄膜を分離する工程がエピタキシャルリフトオフによって実施される、項目19に記載の方法。
[項目21]
前記金属箔と前記P型ドープ領域との間に接点の第1のセットを形成する工程と、
前記金属箔と前記N型ドープ領域との間に接点の第2のセットを形成する工程と、
金属接点の前記第1のセットと金属接点の前記第2のセットとの間に複数の分離を形成する工程と、
を更に備える、項目19に記載の方法。
Claims (8)
- 通常の動作中に太陽に面する表側と、前記表側と反対側の裏側とを有する基板と、
前記基板の前記表側上の封入材料と、
前記封入材料上の透明層と、
前記基板の前記裏側上のP型ドープ領域及びN型ドープ領域と、
前記P型ドープ領域及び前記N型ドープ領域上の第1誘電体と、
前記第1誘電体を通って前記P型ドープ領域と電気的に接続される第1接点と、前記第1誘電体を通って前記N型ドープ領域と電気的に接続される第2接点とを有する金属箔と、
前記金属箔を前記第1誘電体に接着する接着層と、
を備え、
前記金属箔は、前記基板の外辺部を越えて延びる、
太陽電池。 - 前記接着層はエポキシを含む、請求項1に記載の太陽電池。
- 前記透明層はガラスを含む、請求項1又は2に記載の太陽電池。
- 前記基板の前記表側は、テクスチャ加工される、請求項1から3のいずれか一項に記載の太陽電池。
- 前記基板は、シリコンを含む、請求項1から4のいずれか一項に記載の太陽電池。
- 前記金属箔は、アルミニウムを含む、請求項1から5のいずれか一項に記載の太陽電池。
- 前記金属箔は、Al−x%Siを含み、x%は、0%から3%までの範囲である、請求項1から6のいずれか一項に記載の太陽電池。
- 前記第1接点と前記第2接点との間に指部分離のパターンをさらに備え、前記指部分離のパターンは、前記第1接点を前記第2接点から電気的に分離する、請求項1から7のいずれか一項に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/725,580 US9812592B2 (en) | 2012-12-21 | 2012-12-21 | Metal-foil-assisted fabrication of thin-silicon solar cell |
US13/725,580 | 2012-12-21 |
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JP2015549363A Division JP6283037B2 (ja) | 2012-12-21 | 2013-06-20 | 薄いシリコン太陽電池の金属箔援用製造 |
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JP2019198149A Division JP6831964B2 (ja) | 2012-12-21 | 2019-10-31 | 太陽電池 |
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JP2018082212A JP2018082212A (ja) | 2018-05-24 |
JP6612906B2 true JP6612906B2 (ja) | 2019-11-27 |
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JP2015549363A Active JP6283037B2 (ja) | 2012-12-21 | 2013-06-20 | 薄いシリコン太陽電池の金属箔援用製造 |
JP2018010846A Active JP6612906B2 (ja) | 2012-12-21 | 2018-01-25 | 太陽電池 |
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CN104981910A (zh) | 2015-10-14 |
DE112013006103T5 (de) | 2015-09-17 |
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CN104981910B (zh) | 2019-01-18 |
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CN110047946A (zh) | 2019-07-23 |
WO2014098988A1 (en) | 2014-06-26 |
KR102072262B1 (ko) | 2020-01-31 |
JP2020031228A (ja) | 2020-02-27 |
US9812592B2 (en) | 2017-11-07 |
JP2018082212A (ja) | 2018-05-24 |
CN110047946B (zh) | 2023-05-16 |
TWI601303B (zh) | 2017-10-01 |
KR20200012029A (ko) | 2020-02-04 |
JP6831964B2 (ja) | 2021-02-24 |
KR102333503B1 (ko) | 2021-12-01 |
TW201427059A (zh) | 2014-07-01 |
US20210175375A1 (en) | 2021-06-10 |
MY181191A (en) | 2020-12-21 |
KR20150097648A (ko) | 2015-08-26 |
KR20200119896A (ko) | 2020-10-20 |
JP2016502283A (ja) | 2016-01-21 |
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