TWI600110B - 用於較小晶圓及晶圓片之晶圓載具 - Google Patents
用於較小晶圓及晶圓片之晶圓載具 Download PDFInfo
- Publication number
- TWI600110B TWI600110B TW103137451A TW103137451A TWI600110B TW I600110 B TWI600110 B TW I600110B TW 103137451 A TW103137451 A TW 103137451A TW 103137451 A TW103137451 A TW 103137451A TW I600110 B TWI600110 B TW I600110B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- carrier
- clamping
- electrode assembly
- mask
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims description 174
- 238000000034 method Methods 0.000 claims description 46
- 238000012545 processing Methods 0.000 claims description 25
- 230000005611 electricity Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 17
- 238000000429 assembly Methods 0.000 description 12
- 230000000712 assembly Effects 0.000 description 12
- 238000012546 transfer Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- -1 quartz or glass) Chemical compound 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49998—Work holding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/099,856 US9460950B2 (en) | 2013-12-06 | 2013-12-06 | Wafer carrier for smaller wafers and wafer pieces |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201523787A TW201523787A (zh) | 2015-06-16 |
| TWI600110B true TWI600110B (zh) | 2017-09-21 |
Family
ID=53271907
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103137451A TWI600110B (zh) | 2013-12-06 | 2014-10-29 | 用於較小晶圓及晶圓片之晶圓載具 |
| TW106112325A TWI620262B (zh) | 2013-12-06 | 2014-10-29 | 用於較小晶圓及晶圓片之晶圓載具 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106112325A TWI620262B (zh) | 2013-12-06 | 2014-10-29 | 用於較小晶圓及晶圓片之晶圓載具 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9460950B2 (enExample) |
| JP (1) | JP6656153B2 (enExample) |
| KR (2) | KR101757378B1 (enExample) |
| CN (1) | CN105793974B (enExample) |
| TW (2) | TWI600110B (enExample) |
| WO (1) | WO2015084463A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9740111B2 (en) * | 2014-05-16 | 2017-08-22 | Applied Materials, Inc. | Electrostatic carrier for handling substrates for processing |
| JP6640878B2 (ja) * | 2017-01-31 | 2020-02-05 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 基板キャリア及び基板を処理する方法 |
| TWI827502B (zh) * | 2017-06-19 | 2023-12-21 | 美商應用材料股份有限公司 | 用於高溫處理腔室的靜電吸座及其形成方法 |
| CN110720138A (zh) * | 2017-06-22 | 2020-01-21 | 应用材料公司 | 用于晶粒接合应用的静电载具 |
| CN111128834B (zh) * | 2018-10-31 | 2022-09-06 | 成都辰显光电有限公司 | 微元件转移设备及其制作方法 |
| CN109545731B (zh) * | 2018-11-20 | 2021-12-28 | 合肥京东方显示技术有限公司 | 转移头及其制备方法、转移方法、转移装置 |
| US12125728B2 (en) * | 2019-01-21 | 2024-10-22 | Applied Materials, Inc. | Substrate carrier |
| JP7322175B2 (ja) * | 2019-04-11 | 2023-08-07 | アプライド マテリアルズ インコーポレイテッド | 光学デバイスのための多重深度膜 |
| CN110137130B (zh) * | 2019-05-15 | 2020-12-29 | 江苏鲁汶仪器有限公司 | 一种干法刻蚀系统用尺寸转换托盘 |
| JP7350438B2 (ja) * | 2019-09-09 | 2023-09-26 | 株式会社ディスコ | チャックテーブル及びチャックテーブルの製造方法 |
| KR102842706B1 (ko) * | 2020-05-18 | 2025-08-06 | 삼성디스플레이 주식회사 | 정전척 |
| CN112117230B (zh) * | 2020-10-19 | 2025-01-24 | 北京航空航天大学杭州创新研究院 | 高密度图案化加工的衬底-掩模板原位保持装置 |
| KR102327829B1 (ko) * | 2020-11-02 | 2021-11-17 | 주식회사 엘케이엔지니어링 | 정전척 |
| WO2024150352A1 (ja) * | 2023-01-12 | 2024-07-18 | 日本碍子株式会社 | ウエハ載置台 |
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| JPS619655A (ja) * | 1984-06-25 | 1986-01-17 | Nippon Telegr & Teleph Corp <Ntt> | 物体の固定方法および固定機構 |
| JP2574407B2 (ja) * | 1988-07-05 | 1997-01-22 | 富士通株式会社 | 電子ビーム露光装置用ウェハーホルダ |
| JP2535663B2 (ja) * | 1990-10-02 | 1996-09-18 | 株式会社アビサレ | 掲示装置 |
| JP3095790B2 (ja) | 1991-01-22 | 2000-10-10 | 富士電機株式会社 | 静電チャック |
| JPH07257751A (ja) | 1994-03-18 | 1995-10-09 | Kanagawa Kagaku Gijutsu Akad | 静電浮上搬送装置及びその静電浮上用電極 |
| JPH07297266A (ja) * | 1994-04-28 | 1995-11-10 | Fujitsu Ltd | 静電チャックとウェハ吸着方法 |
| US5751538A (en) * | 1996-09-26 | 1998-05-12 | Nikon Corporation | Mask holding device and method for holding mask |
| US5886866A (en) | 1998-07-06 | 1999-03-23 | Applied Materials, Inc. | Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing |
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| JP2001035907A (ja) | 1999-07-26 | 2001-02-09 | Ulvac Japan Ltd | 吸着装置 |
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| JP4709945B2 (ja) | 2009-04-13 | 2011-06-29 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5597502B2 (ja) * | 2009-09-30 | 2014-10-01 | 京セラ株式会社 | 吸着用部材およびこれを用いた吸着装置、並びに光照射装置および荷電粒子線装置 |
| KR20110099974A (ko) * | 2010-03-03 | 2011-09-09 | 주식회사 코미코 | 정전척 및 이의 제조 방법 |
| US20120227886A1 (en) | 2011-03-10 | 2012-09-13 | Taipei Semiconductor Manufacturing Company, Ltd. | Substrate Assembly Carrier Using Electrostatic Force |
| JP5528394B2 (ja) * | 2011-05-30 | 2014-06-25 | パナソニック株式会社 | プラズマ処理装置、搬送キャリア、及びプラズマ処理方法 |
| US20130107415A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
| US8902561B2 (en) * | 2012-02-02 | 2014-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrostatic chuck with multi-zone control |
| JP6231078B2 (ja) * | 2012-04-26 | 2017-11-15 | インテヴァック インコーポレイテッド | 真空プロセスのためのシステム構成 |
| KR102047001B1 (ko) | 2012-10-16 | 2019-12-03 | 삼성디스플레이 주식회사 | 정전 척 |
| KR101905158B1 (ko) | 2013-08-06 | 2018-10-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 국부적으로 가열되는 다-구역 기판 지지부 |
| US9740111B2 (en) | 2014-05-16 | 2017-08-22 | Applied Materials, Inc. | Electrostatic carrier for handling substrates for processing |
| US10978334B2 (en) | 2014-09-02 | 2021-04-13 | Applied Materials, Inc. | Sealing structure for workpiece to substrate bonding in a processing chamber |
-
2013
- 2013-12-06 US US14/099,856 patent/US9460950B2/en not_active Expired - Fee Related
-
2014
- 2014-09-19 JP JP2016536811A patent/JP6656153B2/ja active Active
- 2014-09-19 CN CN201480065526.6A patent/CN105793974B/zh active Active
- 2014-09-19 KR KR1020167017937A patent/KR101757378B1/ko active Active
- 2014-09-19 WO PCT/US2014/056607 patent/WO2015084463A1/en not_active Ceased
- 2014-09-19 KR KR1020177004117A patent/KR20170020552A/ko not_active Ceased
- 2014-10-29 TW TW103137451A patent/TWI600110B/zh active
- 2014-10-29 TW TW106112325A patent/TWI620262B/zh active
-
2016
- 2016-08-26 US US15/249,009 patent/US10236201B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20160365269A1 (en) | 2016-12-15 |
| TWI620262B (zh) | 2018-04-01 |
| CN105793974B (zh) | 2020-01-10 |
| TW201732992A (zh) | 2017-09-16 |
| JP6656153B2 (ja) | 2020-03-04 |
| US20150162231A1 (en) | 2015-06-11 |
| WO2015084463A1 (en) | 2015-06-11 |
| JP2017501572A (ja) | 2017-01-12 |
| US9460950B2 (en) | 2016-10-04 |
| TW201523787A (zh) | 2015-06-16 |
| US10236201B2 (en) | 2019-03-19 |
| KR101757378B1 (ko) | 2017-07-12 |
| KR20170020552A (ko) | 2017-02-22 |
| CN105793974A (zh) | 2016-07-20 |
| KR20160093711A (ko) | 2016-08-08 |
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