WO2005004229A1 - 基板ステージ用静電チャック及びそれに用いる電極ならびにそれらを備えた処理システム - Google Patents
基板ステージ用静電チャック及びそれに用いる電極ならびにそれらを備えた処理システム Download PDFInfo
- Publication number
- WO2005004229A1 WO2005004229A1 PCT/JP2004/009346 JP2004009346W WO2005004229A1 WO 2005004229 A1 WO2005004229 A1 WO 2005004229A1 JP 2004009346 W JP2004009346 W JP 2004009346W WO 2005004229 A1 WO2005004229 A1 WO 2005004229A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrostatic chuck
- substrate stage
- electrode
- substrate
- base material
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Definitions
- the present invention relates to an electrostatic chuck for a substrate stage used for plasma processing of various substrates such as a large glass substrate for a flat panel display (FPD) and a semiconductor wafer, and a processing system provided with the electrodes used therefor, as well as the electrodes used therefor. .
- FPD flat panel display
- a processing system provided with the electrodes used therefor, as well as the electrodes used therefor.
- an electric Electrostatic chucks that use attractive Coulomb force to attract are used.
- the electrostatic chuck structure is divided into a monopolar type, which applies a potential difference between the internal electrode and the substrate to attract the substrate, and an electrode divided into two or more inside the electrostatic chuck.
- a bipolar type in which a positive or negative voltage is applied to each of them to attract a substrate is used.
- a glass substrate electrostatic chuck that uses a pair of semicircular, ring-shaped, or concentric planar electrodes and applies a voltage between the planar electrodes to electrostatically attract the substrate.
- This electrostatic chuck consists of an inner electrode, an outer insulating film and a ring-shaped outer electrode, and an electrostatic chuck. It consists of an insulating film (dielectric film).
- the inner electrode has a coolant flow path formed therein and an outer electrode formed on the upper surface, and thus has, for example, a ring-shaped recess.
- the inner electrode is made of a conductive material such as an aluminum alloy, an insulating material covering the conductive material, and a ring electrode. That is, an outer electrode made of a conductive material such as tungsten is provided in a ring shape in the recess on the upper surface of the inner electrode through an insulating film formed of a multilayer sprayed film (in this case, alumina). This insulating film exists between the inner electrode and the ring-shaped outer electrode, insulates both electrodes directly, and is provided on the surface of the inner electrode and the ring-shaped outer electrode.
- FIG. 1 and FIG. 2 are those in which an insulating film made of a sprayed film (in this case, alumina) is formed (for example, pages 5 to 6 of JP-A-10-150100, paragraph [0201]). And FIG. 1 and FIG. 2), or those using a so-called comb-shaped electrode in the electrode shape (for example, see Japanese Patent Application Laid-Open No. 11-354504 (pages 9 to 10, paragraph [ 0 0 4 9], and Fig. 1 (c)).
- the electrostatic chuck for the substrate stage and its electrode used in such a conventional plasma processing apparatus use an integrated planar electrode provided with a ring-shaped, semi-circular or concentric multilayer sprayed film. If a part of the electrode is damaged, it is necessary to replace and repair the entire electrode. The sprayed coating applied to the electrodes Therefore, when the substrate to be processed is large and used under high temperature conditions, the reliability is extremely low. Furthermore, since the electrodes are of an integral structure (single electrode) or only divided into two or three parts, special equipment is required to increase the size of the production equipment, which increases the manufacturing cost of the electrodes, and The delivery date of the product tended to be prolonged.
- the present invention solves the problems of the electrostatic chuck for a substrate stage used in the conventional plasma processing apparatus as described above, and provides a highly reliable and easy-to-manufacture electrostatic chuck and an electrode for a substrate. And to provide a processing system equipped with them.
- an electrode used for an electrostatic chuck is divided into a plurality of pieces to form a substantially rod shape, and each of the divided rod-shaped electrodes is formed into a single-layer sprayed film by wrapping an inner electrode and a surface of the inner electrode. And arranged in parallel to form a planar electrode.
- FIG. 1 is a conceptual configuration diagram showing functions at respective processing positions of a plasma processing apparatus using the electrostatic chuck for a substrate stage of the present invention.
- FIG. 2 is an explanatory view of the essential structure of the substrate stage electrostatic chuck and the substrate detaching operation according to the present invention.
- FIG. 2 (a) is a vertical cross-sectional view showing a state in which the substrate is placed on the substrate stage electrostatic chuck.
- Figure 2 (b) shows the lift pin raised to release (release) the substrate placed on the electrostatic chuck for the substrate stage, disengaged from the suction surface of the electrostatic chuck, and moved. It is a longitudinal cross-sectional view which shows the state mounted on the fork.
- FIG. 3 is a sectional view of an electrode used in the electrostatic chuck for a substrate stage according to the present invention.
- Figure (a) shows a square electrode
- Figure 3 (b) shows a rectangular electrode
- FIG. 4 shows an embodiment of the electrostatic chuck for a substrate stage of the present invention shown in FIG. 2, in which electrodes used for an electrostatic chuck are arranged in a strip shape in parallel on a frame.
- FIG. 5 is a conceptual diagram showing a substrate suction state by the substrate stage electrostatic chuck of the present invention.
- FIG. 6 is a conceptual diagram showing a method of wiring the electrostatic chuck for a substrate stage to electrodes according to the present invention.
- FIG. 6 (a) shows a method having different polarities of A and B, and FIG. b) indicates + or unipolar switching.
- FIG. 7 is a schematic diagram showing the principle of adsorption of the substrate by the electrostatic chuck for substrate stage.
- Fig. 7 (a) shows the conventional method using a normal unipolar electrode in the presence of plasma.
- FIG. 7 (b) shows a state in which the substrate is attracted to the electrode surface by the Coulomb force
- FIG. 7 (b) shows the electrostatic chuck for a substrate stage of the present invention.
- FIG. 7 (c) shows a state where the substrate stage of the present invention is adsorbed in the presence of plasma using a single electrode.
- Fig. 8 is a graph showing the change over time of the residual attraction force of the electrode of the electrostatic chuck for board stage. When disconnected, Fig. 8 (b) shows the case where the power supply pin is disconnected with the power turned on after applying the voltage.
- the plasma processing apparatus 1 in which the electrostatic chuck for a substrate stage of the present invention is used is configured to perform continuous transfer processing of a substrate G (for example, a glass substrate), that is, inline processing. Transfer of the substrate having the heating cut 20 in the transfer direction ( ⁇ mark) ⁇ Preheating ⁇ Deposition or etching zone C having the adsorption zone A, the heating zone B, the plasma cut 7, and the cooling zone While having the return loop D at the position 9b ⁇ 9c ⁇ 9d ⁇ 9e ⁇ 9f to the cooling transfer zone D with the slot 31 Inline processing is performed.
- a substrate G for example, a glass substrate
- the substrate stage 9 returns to the original transfer zone A while being cooled or heated by another cooling unit 32 or a heating unit disposed at the bottom of the plasma processing apparatus 1. There.
- the transfer zone A the transfer of the substrate G from a previous process (for example, a cleaning process) to the substrate stage 9 by a normal transfer mechanism, preheating, and power supply and suction to the electrostatic chuck are performed.
- the plasma unit 7 (for example, a linear plasma unit having seven plasma heads) forms a linear plasma using electromagnetic waves, and the substrate G is formed. While maintaining the surface of the substrate G horizontal to the linear plasma, and continuously moving the relative position of the substrate G and the plasma, the surface of the substrate G is exposed to a C at a process temperature of about 250 to 300 ° C. Perform VD film formation (or etching) processing. At this time, the temperature distribution on the substrate G is allowed to be about ⁇ 5 ° C. Then, the plasma-processed substrate G is cooled. Then, it is released (released) from the electrostatic chuck and transferred to the next process by a commonly used transfer mechanism such as a transfer robot. Note that the plasma-processed substrate may be unloaded at the loading side.
- a high-speed plasma treatment of 60 / hour glass substrates of 110 mm ⁇ 130 mm can be performed.
- the substrate stage electrostatic chuck 10 of the present invention for holding the substrate G by suction is provided with a frame 41 having a step portion 41b on the inside, and a front wheel roller and a rear wheel roller 2 below the frame 41.
- the front and rear wheel guide rails 11 and 12 have front and rear wheels on the frame of the processing equipment.
- guide pieces 44 hanging from the substrate stage 9 are guided and transferred to guide piece receiving stands (V-grooved rails) 45 fixed to the frame of the processing apparatus.
- a large glass substrate for FPD has a size of, for example, 110 mm X 130 O mm, and 0.63 to 0.7. Since it has a thickness of about 0 mm, the electrostatic chuck 10 may have a large-sized substrate suction surface (for example, size of 120 mm X 130 O ram) adapted to this size. is necessary.
- the electrode 40 to be used is divided into a plurality of rod-shaped bodies (for example, divided into 10), and the length thereof is 112 O It is composed of a square bar having a width of about 4 O mm, or a rod having a cross-sectional shape described later.
- the electrode 40 of the electrostatic chuck 10 of the present invention has a substrate 40a having high thermal conductivity and low thermal expansion (for example, metal-ceramic composite material: high purity, etc.). Over the entire surface of isotropic graphite material) High purity ceramic box of) 3 0 0 ⁇ 4 0 0 m thickness about including an end face (e.g., a powder A 1 2 0 3) sprayed in the molten state by a vacuum spraying method, solidified by a single layer thermally sprayed Then, a sprayed film (insulating film) 40 b for electrostatic attraction is formed. With an electric circuit for electrostatic adsorption via the insulating film is formed, it becomes possible to avoid the occurrence of damage due Chestnut one Yungugasu such deposition or etching process gas and NF 3.
- the cross-sectional shape of the base material 40a is formed in a square shape
- the cross-sectional shape is formed in a rectangular shape
- the base material 40a is formed in a step-like shape, and the high-purity ceramic is formed on the surface.
- the sprayed film can be formed into a single-layer spray to form a sprayed film 40b.
- the step shape blocks the radiant heat from the heater and improves the uniformity of the temperature distribution of the substrate G. Further, the weight may be reduced by circling an appropriate surface of the base material of the electrode 40.
- the cross-sectional shape of the base material 40 is formed into a roof tile shape having a curved convex portion on one surface and a curved concave portion on the opposite surface. The portion may be arranged so as to keep a predetermined gap g from the concave portion of the adjacent electrode.
- the electrodes 40 may be composed of base materials 40a having different widths.
- a rod-like (square, rectangular, step-shaped cross-section or roof tile-shaped cross-section) electrode 40 having a high-purity ceramic sprayed film 40b formed on the surface of the base material 40a thus configured is used.
- a frame-shaped electrode supporting frame is formed on a stage frame 42 (for example, made of a low thermal expansion metal material such as SUS430, 42 alloy) of the substrate stage 9.
- the body 41 is fixed, and the supporting frame 41 faces the opposite step.
- An electrode 40 having steps 40e (see Fig. 2 (a)) at both ends is bridged and arranged in the section 41b, and a gap g that is an air space between the electrodes 40, 40 (for example, For example, 10 electrodes 40 are placed in parallel.
- the step portion 40e of the electrode 40 is fixed on the step portion 41b of the supporting frame 41 with a clamp having a degree of freedom in the longitudinal direction (not shown).
- the heat shield plate 43 is connected to the heating unit 20 in order to block heat radiation from members other than the electrode 40 from the heating unit 20 (for example, a far-infrared heater) fixed below the electrode 40. It is arranged between the support frame 41 and the support frame 41.
- the substrate G is attracted to the electrode 40 surface.
- the static electricity is removed from the electrode 40 by usual means, and then, for example, four lift pins 51 extending through the substrate stage 9 are extended as shown in FIG. 2 (b). Elevating mechanism (not shown) The substrate G is lifted to release (release) the substrate G from above the electrode 40.
- the electrodes 40 were placed side by side on the electrode supporting frame 41, but the upper surface of the substrate stage 9 was formed flat, and a plurality of electrodes 40 were placed on the edge of the substrate G, for example. It may be arranged in a brick shape along or with a gap g between the adjacent electrodes 40 at appropriate locations.
- the substrate G (for example, a glass substrate) is completely attracted to the upper surface of the electrode 40 by any of these electrode 40 arrangement methods.
- the insulation between the electrodes 40, 40 is completely achieved. Abnormal discharge between adjacent electrodes (horizontal flying) is prevented, and the charge does not escape, so the adsorption state is maintained. Is done.
- a plurality of electrodes 40 are arranged with a gap g formed between adjacent electrodes 40, 40, and a substrate G is arranged. Then, as shown in FIG. 6, wiring is performed on each of the electrodes 40, 40 (as shown in FIG. 6 (a) or as shown in FIG. 6 (b)). In the wiring of Fig. 6 (a), as shown in Table 1, a positive or negative voltage is applied to switch between monopolar and bipolar connected to each terminal.
- FIG. 7 (c) of the present invention shows an example of a monopolar type which is adsorbed via plasma as in the conventional method.
- FIG. 7 (b) shows an example of a bipolar type in which adsorption is performed without using plasma.
- the glass substrate G is generally a high-resistance material at room temperature. However, when a high voltage is applied instantaneously, the glass substrate G is polarized near the surface of the glass substrate, and an attractive force is generated. In addition, at high temperatures, the resistance of the glass substrate is reduced, and the glass substrate is polarized by exhibiting conductivity, thereby generating an attraction force.
- the power is supplied to the electrode 40 by the power supply means on the substrate stage 9 in the A zone shown in FIG.
- the pin (not shown) is disconnected from the electrode 40 force and transferred to 9b, 9c, 9d.
- the electrode is turned off with the power supply pin connected. (See Fig. 8 (a).) Since the insulation between the adjacent electrodes 40 and 40 does not allow the charge to escape because the insulation between the adjacent electrodes 40 and 40 is maintained, the residual adsorbing force can be reduced for a considerable time.
- the substrate can be held and the substrate can be maintained in a suction state.
- the substrate G is completely stopped until the substrate G is pushed up by the lift pins 51 in the cooling / release 'transfer zone D and released (released) by the robot 50 or the like.
- Plasma treatment can be performed by adsorbing on an electric chuck.
- the residual attraction force can be increased by increasing the applied voltage and increasing the number of divided electrodes.
- a single-layer thermal spray of high-purity ceramic is performed by wrapping the electrode material of the rod-shaped inner electrode divided into a plurality. Since the electrodes are used as electrostatic chuck electrodes, high reliability can be obtained, and by arranging a plurality of these in parallel, the electrodes can be freely arranged in the width direction, and the electrodes are divided into several pieces. Since it is repaired, it can be partially replaced and repaired at the time of breakage, and at the same time, it is possible to cope with the enlargement of the substrate, and since the individual electrodes are not large in area, the transportation and handling thereof are facilitated. Switching to bipolar or monopolar is possible depending on the wiring method to the electrodes. Furthermore, the electrode can be manufactured at a lower cost and in a shorter time than before.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/563,302 US7916447B2 (en) | 2003-07-08 | 2004-06-25 | Electrostatic chuck for substrate stage, electrode used for the chuck, and treating system having the chuck and electrode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003/193479 | 2003-07-08 | ||
JP2003193479 | 2003-07-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005004229A1 true WO2005004229A1 (ja) | 2005-01-13 |
Family
ID=33562464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/009346 WO2005004229A1 (ja) | 2003-07-08 | 2004-06-25 | 基板ステージ用静電チャック及びそれに用いる電極ならびにそれらを備えた処理システム |
Country Status (6)
Country | Link |
---|---|
US (1) | US7916447B2 (ja) |
JP (2) | JP4396892B2 (ja) |
KR (1) | KR100832684B1 (ja) |
CN (1) | CN100433286C (ja) |
TW (1) | TWI264082B (ja) |
WO (1) | WO2005004229A1 (ja) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7354288B2 (en) * | 2005-06-03 | 2008-04-08 | Applied Materials, Inc. | Substrate support with clamping electrical connector |
JP4591525B2 (ja) * | 2008-03-12 | 2010-12-01 | ソニー株式会社 | 半導体装置 |
JP5500076B2 (ja) * | 2008-10-23 | 2014-05-21 | 旭硝子株式会社 | ガラス基板積層装置及び積層ガラス基板の製造方法 |
JP5508737B2 (ja) * | 2009-02-24 | 2014-06-04 | 東京エレクトロン株式会社 | 静電チャック及びプラズマ処理装置 |
JP5676175B2 (ja) * | 2009-08-24 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
JP5328726B2 (ja) | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
JP5677785B2 (ja) * | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
JP5611718B2 (ja) * | 2009-08-27 | 2014-10-22 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
KR101084184B1 (ko) | 2010-01-11 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101174875B1 (ko) | 2010-01-14 | 2012-08-17 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101193186B1 (ko) | 2010-02-01 | 2012-10-19 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101156441B1 (ko) | 2010-03-11 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101202348B1 (ko) | 2010-04-06 | 2012-11-16 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
KR101223723B1 (ko) | 2010-07-07 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101678056B1 (ko) | 2010-09-16 | 2016-11-22 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101723506B1 (ko) | 2010-10-22 | 2017-04-19 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101738531B1 (ko) | 2010-10-22 | 2017-05-23 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR20120045865A (ko) | 2010-11-01 | 2012-05-09 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
KR20120065789A (ko) | 2010-12-13 | 2012-06-21 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
KR101760897B1 (ko) | 2011-01-12 | 2017-07-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 구비하는 유기막 증착 장치 |
JP5945099B2 (ja) * | 2011-04-20 | 2016-07-05 | 日本特殊陶業株式会社 | 配線基板、多数個取り配線基板、およびその製造方法 |
KR101923174B1 (ko) | 2011-05-11 | 2018-11-29 | 삼성디스플레이 주식회사 | 정전 척, 상기 정전 척을 포함하는 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
KR101840654B1 (ko) | 2011-05-25 | 2018-03-22 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101852517B1 (ko) | 2011-05-25 | 2018-04-27 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101857249B1 (ko) | 2011-05-27 | 2018-05-14 | 삼성디스플레이 주식회사 | 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치 |
KR101826068B1 (ko) | 2011-07-04 | 2018-02-07 | 삼성디스플레이 주식회사 | 유기층 증착 장치 |
KR20130004830A (ko) | 2011-07-04 | 2013-01-14 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
KR20130069037A (ko) | 2011-12-16 | 2013-06-26 | 삼성디스플레이 주식회사 | 유기층 증착 장치, 이를 이용한 유기 발광 표시 장치의 제조 방법 및 유기 발광 표시 장치 |
CN103545460B (zh) | 2012-07-10 | 2017-04-12 | 三星显示有限公司 | 有机发光显示装置、有机发光显示设备及其制造方法 |
KR101959974B1 (ko) | 2012-07-10 | 2019-07-16 | 삼성디스플레이 주식회사 | 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR102013318B1 (ko) | 2012-09-20 | 2019-08-23 | 삼성디스플레이 주식회사 | 유기층 증착 장치, 이를 이용한 유기 발광 표시 장치의 제조 방법 및 유기 발광 표시 장치 |
KR20140095795A (ko) * | 2013-01-25 | 2014-08-04 | 삼성디스플레이 주식회사 | 디스플레이 패널 및 디스플레이 패널의 제조방법 |
KR102108361B1 (ko) | 2013-06-24 | 2020-05-11 | 삼성디스플레이 주식회사 | 증착률 모니터링 장치, 이를 구비하는 유기층 증착 장치, 증착률 모니터링 방법, 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
WO2015013142A1 (en) | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An electrostatic chuck for high temperature process applications |
KR101876501B1 (ko) | 2013-08-05 | 2018-07-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시츄 제거 가능한 정전 척 |
WO2015020810A1 (en) | 2013-08-05 | 2015-02-12 | Applied Materials, Inc. | Electrostatic carrier for thin substrate handling |
KR101905158B1 (ko) | 2013-08-06 | 2018-10-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 국부적으로 가열되는 다-구역 기판 지지부 |
WO2015042302A1 (en) | 2013-09-20 | 2015-03-26 | Applied Materials, Inc. | Substrate carrier with integrated electrostatic chuck |
US9460950B2 (en) | 2013-12-06 | 2016-10-04 | Applied Materials, Inc. | Wafer carrier for smaller wafers and wafer pieces |
KR102162797B1 (ko) | 2013-12-23 | 2020-10-08 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 |
KR20170002607A (ko) | 2014-05-09 | 2017-01-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 캐리어 시스템 및 이를 사용하기 위한 방법 |
WO2015171226A1 (en) | 2014-05-09 | 2015-11-12 | Applied Materials, Inc. | Substrate carrier system with protective covering |
US9959961B2 (en) | 2014-06-02 | 2018-05-01 | Applied Materials, Inc. | Permanent magnetic chuck for OLED mask chucking |
JP6302796B2 (ja) * | 2014-08-28 | 2018-03-28 | 住友理工株式会社 | 導電性発泡ロール |
CN107431040B (zh) * | 2015-04-15 | 2020-10-16 | 株式会社爱发科 | 吸附装置、真空处理装置 |
KR102547845B1 (ko) | 2015-06-04 | 2023-06-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 투명한 정전 캐리어 |
US10777442B2 (en) * | 2016-11-18 | 2020-09-15 | Applied Materials, Inc. | Hybrid substrate carrier |
JP6925711B2 (ja) * | 2017-04-12 | 2021-08-25 | 株式会社ディスコ | フレームユニット及び被加工物のレーザー加工方法 |
KR20200051884A (ko) * | 2018-11-05 | 2020-05-14 | 삼성디스플레이 주식회사 | 캐리어, 이를 포함하는 표시 장치의 제조장치 및 표시 장치의 제조방법 |
JP7341043B2 (ja) * | 2019-12-06 | 2023-09-08 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP7296869B2 (ja) * | 2019-12-10 | 2023-06-23 | 新光電気工業株式会社 | 静電チャック、基板固定装置 |
CN112234015B (zh) * | 2020-10-12 | 2022-05-13 | 烟台睿瓷新材料技术有限公司 | 一种同心圆结构的静电吸盘电极图形结构 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07201962A (ja) * | 1993-12-20 | 1995-08-04 | Internatl Business Mach Corp <Ibm> | 静電チャック装置およびその製造方法 |
JPH09260472A (ja) * | 1996-03-19 | 1997-10-03 | Sony Corp | 静電チャック |
JPH11135602A (ja) * | 1997-10-30 | 1999-05-21 | Shin Etsu Chem Co Ltd | 静電吸着装置 |
JP2000349141A (ja) * | 1999-06-09 | 2000-12-15 | Mitsubishi Electric Corp | プラズマ処理装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62211363A (ja) * | 1986-02-07 | 1987-09-17 | Nippon Kokan Kk <Nkk> | 低圧プラズマ加工方法 |
JP2581066B2 (ja) * | 1987-03-31 | 1997-02-12 | 富士通株式会社 | ウエ−ハ搬送方法及び装置 |
JPH0774074B2 (ja) * | 1987-09-02 | 1995-08-09 | 株式会社東芝 | エレベータの足場なし据付装置 |
US4962441A (en) * | 1989-04-10 | 1990-10-09 | Applied Materials, Inc. | Isolated electrostatic wafer blade clamp |
JPH03183151A (ja) * | 1989-12-12 | 1991-08-09 | Denki Kagaku Kogyo Kk | 静電チャック板 |
US5315473A (en) * | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
JPH06224287A (ja) * | 1993-01-28 | 1994-08-12 | Sumitomo Metal Ind Ltd | 静電チャックの製造方法 |
JPH0722499A (ja) * | 1993-06-18 | 1995-01-24 | Kokusai Electric Co Ltd | 半導体製造装置及び方法 |
US5671116A (en) * | 1995-03-10 | 1997-09-23 | Lam Research Corporation | Multilayered electrostatic chuck and method of manufacture thereof |
JP3370489B2 (ja) * | 1995-08-31 | 2003-01-27 | 京セラ株式会社 | 静電チャック |
JP3527823B2 (ja) * | 1997-01-31 | 2004-05-17 | 京セラ株式会社 | 静電チャック |
US5978202A (en) * | 1997-06-27 | 1999-11-02 | Applied Materials, Inc. | Electrostatic chuck having a thermal transfer regulator pad |
JP2001250854A (ja) * | 1999-12-28 | 2001-09-14 | Nikon Corp | 搬送方法及び搬送装置、位置決め方法及び位置決め装置、基板保持方法及び基板保持装置、露光方法及び露光装置、デバイスの製造方法及びデバイス |
TW473792B (en) * | 2000-01-20 | 2002-01-21 | Ngk Insulators Ltd | Electrostatic chuck |
WO2001062686A1 (fr) * | 2000-02-24 | 2001-08-30 | Ibiden Co., Ltd. | Piece frittee en nitrure d'aluminium, substrat en ceramique, corps chauffant en ceramique et mandrin electrostatique |
JP2002009138A (ja) * | 2000-06-21 | 2002-01-11 | Mitsubishi Heavy Ind Ltd | 静電チャックの製造方法および静電チャック |
JP2002280283A (ja) * | 2001-03-16 | 2002-09-27 | Canon Inc | 基板処理装置 |
JP2002329777A (ja) * | 2001-05-07 | 2002-11-15 | Tokyo Electron Ltd | プラズマ処理方法及び基板保持装置 |
JP2002357838A (ja) * | 2001-05-31 | 2002-12-13 | Hitachi Industries Co Ltd | 基板貼り合わせ方法及びその装置 |
US6490145B1 (en) * | 2001-07-18 | 2002-12-03 | Applied Materials, Inc. | Substrate support pedestal |
JP2003037159A (ja) * | 2001-07-25 | 2003-02-07 | Toto Ltd | 静電チャックユニット |
KR100769188B1 (ko) * | 2002-03-20 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | 합착기의 스테이지 |
-
2004
- 2004-06-25 KR KR1020067000279A patent/KR100832684B1/ko not_active IP Right Cessation
- 2004-06-25 CN CNB2004800193653A patent/CN100433286C/zh not_active Expired - Fee Related
- 2004-06-25 US US10/563,302 patent/US7916447B2/en not_active Expired - Fee Related
- 2004-06-25 WO PCT/JP2004/009346 patent/WO2005004229A1/ja active Application Filing
- 2004-07-02 JP JP2004196321A patent/JP4396892B2/ja not_active Expired - Fee Related
- 2004-07-07 TW TW093120390A patent/TWI264082B/zh not_active IP Right Cessation
-
2008
- 2008-09-08 JP JP2008229232A patent/JP2009004806A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07201962A (ja) * | 1993-12-20 | 1995-08-04 | Internatl Business Mach Corp <Ibm> | 静電チャック装置およびその製造方法 |
JPH09260472A (ja) * | 1996-03-19 | 1997-10-03 | Sony Corp | 静電チャック |
JPH11135602A (ja) * | 1997-10-30 | 1999-05-21 | Shin Etsu Chem Co Ltd | 静電吸着装置 |
JP2000349141A (ja) * | 1999-06-09 | 2000-12-15 | Mitsubishi Electric Corp | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4396892B2 (ja) | 2010-01-13 |
CN1816909A (zh) | 2006-08-09 |
US20060164786A1 (en) | 2006-07-27 |
TWI264082B (en) | 2006-10-11 |
JP2005051217A (ja) | 2005-02-24 |
TW200516688A (en) | 2005-05-16 |
KR100832684B1 (ko) | 2008-05-27 |
JP2009004806A (ja) | 2009-01-08 |
KR20060033777A (ko) | 2006-04-19 |
CN100433286C (zh) | 2008-11-12 |
US7916447B2 (en) | 2011-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005004229A1 (ja) | 基板ステージ用静電チャック及びそれに用いる電極ならびにそれらを備えた処理システム | |
US7624772B2 (en) | Load lock apparatus, processing system and substrate processing method | |
CN102593035B (zh) | 用于半导体晶片制造工艺的晶片承载装置 | |
TWI327336B (en) | Arrangement for processing a substrate | |
JP3199713U (ja) | 薄型基板のための携帯用静電チャックキャリア | |
JP4082924B2 (ja) | 静電吸着ホルダー及び基板処理装置 | |
TW202040744A (zh) | 局部加熱之多區域基材支撐座 | |
JP2009272646A (ja) | スパッタリング装置 | |
CN101908468A (zh) | 基板处理装置 | |
CN101728297A (zh) | 静电吸盘装置及其制造方法 | |
TWI794211B (zh) | 基板夾具及基板固定裝置 | |
TW201515144A (zh) | 高溫製程應用上的靜電夾盤 | |
JPH10223621A (ja) | 真空処理装置 | |
JP2004022888A (ja) | 静電吸着装置 | |
KR20080050304A (ko) | 표면 텍스쳐링을 구비한 플라즈마 반응기 기판 | |
JP2006179895A (ja) | 吸着方法 | |
TWI604560B (zh) | 利用膜印刷技術形成靜電夾盤的方法 | |
JP4355159B2 (ja) | 静電吸着ホルダー及び基板処理装置 | |
JP2004158751A (ja) | プラズマ処理装置 | |
KR101128826B1 (ko) | 무냉각식 상압 플라즈마 장치 | |
CN113327881A (zh) | 工作台装置、供电机构和处理装置 | |
JPH02270320A (ja) | 表面処理方法および装置 | |
JP4958406B2 (ja) | 真空雰囲気中におけるガラス基板のハンドリング方法 | |
JP2004218052A (ja) | 真空成膜装置 | |
JP2006054445A (ja) | 吸着装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480019365.3 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
ENP | Entry into the national phase |
Ref document number: 2006164786 Country of ref document: US Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10563302 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067000279 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 10563302 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |