JP4802018B2 - 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置 - Google Patents
静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置 Download PDFInfo
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- JP4802018B2 JP4802018B2 JP2006064020A JP2006064020A JP4802018B2 JP 4802018 B2 JP4802018 B2 JP 4802018B2 JP 2006064020 A JP2006064020 A JP 2006064020A JP 2006064020 A JP2006064020 A JP 2006064020A JP 4802018 B2 JP4802018 B2 JP 4802018B2
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- high voltage
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- electrostatic holding
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- 239000000758 substrate Substances 0.000 claims description 74
- 238000012423 maintenance Methods 0.000 claims description 3
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
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- 230000000116 mitigating effect Effects 0.000 description 2
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- 230000008439 repair process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
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- 230000006641 stabilisation Effects 0.000 description 2
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- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J15/00—Gripping heads and other end effectors
- B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Battery Mounting, Suspending (AREA)
Description
低電圧から静電保持に必要な所定の高電圧へ変換するための高圧発生回路又は高電圧発生源を各電極モジュール毎に配設し、かつ、前記高圧発生回路又は前記高電圧発生源を密閉又は封止したことを特徴とする静電保持装置である。
2000:貼り合わせ装置
W1:上基板
W2:下基板
d:間隔
10:壁体
11:貼り合わせ室(真空チャンバ)
12:扉
13:フランジ部
14:リード線(低電圧又は制御信号)
15:コネクタ
16:上ステージ
17:下ステージ
18:リード線(高電圧)
100:貼り合わせ装置本体(静電保持装置)
101:上テーブル
102:下テーブル
103:貫通孔
104:カメラ
105:照射ランプ
110:電極モジュール
111:ベース部材(モジュール本体)
112a,112b:電極要素群
113:絶縁材料
113a:保持面(静電保持面)
114:高圧発生部(高圧発生回路又は高電圧発生源)
115:直流低電圧源
116:スイッチ
117:制御線
200:貼り合わせ装置本体(静電保持装置)
210:電極モジュール
Claims (8)
- 複数の電極群を保持部として該電極群へ所定の高電圧を印加して保持対象物を静電気力により保持する静電保持装置において、
低電圧から静電保持に必要な所定の高電圧へ変換するための高圧発生回路又は高電圧発生源を各電極モジュール毎に配設し、かつ、前記高圧発生回路又は前記高電圧発生源を密閉又は封止したことを特徴とする静電保持装置。 - 前記高圧発生回路は、電圧増幅回路を含んで構成されることを特徴とする請求項1に記載の静電保持装置。
- 前記高圧発生源は、電池と昇圧回路とを含んで構成されることを特徴とする請求項1に記載の静電保持装置。
- 前記電池と前記昇圧回路との間にはスイッチが配設され、該スイッチは外部から制御可能であることを特徴とする請求項3に記載の静電保持装置。
- 前記高圧発生回路へ低電圧を供給するための低電圧源への接続用のコネクタを備えていることを特徴とする請求項1記載の静電保持装置。
- 前記高圧発生回路を制御する制御電圧用のコネクタを備えていることを特徴とする請求項1記載の静電保持装置。
- 請求項1〜6のいずれか1項に記載の静電保持装置を内部に配設した真空環境装置。
- 内部を減圧雰囲気にするための配管を備えた貼り合わせ室内に、基板を保持した状態で、互いの基板面を基板面方向及び交差する方向に相対移動自在なテーブルを備えた基板のアライメント装置又は貼り合わせ装置であって、
前記基板を保持する保持装置の少なくとも一方は、請求項1〜6のいずれか1項に記載の静電保持装置であり、
該静電保持装置は、装置外部からの制御が行えることを特徴とする基板のアライメント装置又は貼り合わせ装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006064020A JP4802018B2 (ja) | 2006-03-09 | 2006-03-09 | 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置 |
KR1020087024079A KR101358578B1 (ko) | 2006-03-09 | 2007-03-09 | 정전 유지 장치와 이를 이용한 진공 환경 장치 및 접합 장치 |
US12/224,859 US8125756B2 (en) | 2006-03-09 | 2007-03-09 | Electrostatic holding apparatus, vacuum environmental apparatus using it and joining apparatus |
TW096108204A TWI431715B (zh) | 2006-03-09 | 2007-03-09 | 靜電保持裝置以及使用此裝置的真空環境裝置和接合裝置 |
CN2007800084787A CN101401292B (zh) | 2006-03-09 | 2007-03-09 | 静电保持装置以及使用该装置的真空环境装置和接合装置 |
PCT/JP2007/054642 WO2007102598A1 (ja) | 2006-03-09 | 2007-03-09 | 静電保持装置及びそれを用いた真空環境装置並びに接合装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006064020A JP4802018B2 (ja) | 2006-03-09 | 2006-03-09 | 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007242931A JP2007242931A (ja) | 2007-09-20 |
JP4802018B2 true JP4802018B2 (ja) | 2011-10-26 |
Family
ID=38475017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006064020A Active JP4802018B2 (ja) | 2006-03-09 | 2006-03-09 | 静電保持装置及びそれを用いた真空環境装置並びにアライメント装置又は貼り合わせ装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8125756B2 (ja) |
JP (1) | JP4802018B2 (ja) |
KR (1) | KR101358578B1 (ja) |
CN (1) | CN101401292B (ja) |
TW (1) | TWI431715B (ja) |
WO (1) | WO2007102598A1 (ja) |
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JP2007305938A (ja) * | 2006-05-15 | 2007-11-22 | Tomoegawa Paper Co Ltd | 静電吸着装置 |
KR20110093904A (ko) * | 2008-11-25 | 2011-08-18 | 엠 큐브드 테크놀로지스, 인크. | 정전 척 |
WO2010081009A2 (en) | 2009-01-11 | 2010-07-15 | Applied Materials, Inc. | Systems, apparatus and methods for making an electrical connection to a robot and electrical end effector thereof |
US8486726B2 (en) | 2009-12-02 | 2013-07-16 | Veeco Instruments Inc. | Method for improving performance of a substrate carrier |
GB2483287B (en) | 2010-09-03 | 2013-02-06 | Tdk Lambda Uk Ltd | Load sharing apparatus |
CN102479656B (zh) * | 2010-11-27 | 2014-07-16 | 中国科学院近代物理研究所 | 真空管道式束流调节器 |
WO2012165250A1 (ja) * | 2011-05-30 | 2012-12-06 | 株式会社クリエイティブ テクノロジー | 静電吸着体及びこれを用いた静電吸着装置 |
US20150295521A1 (en) * | 2012-11-22 | 2015-10-15 | Creative Technology Corporation | Electrostatic chuck and power supply system |
WO2015013143A1 (en) | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An end effector for transferring a substrate |
WO2015013142A1 (en) | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An electrostatic chuck for high temperature process applications |
JP6423880B2 (ja) | 2013-08-05 | 2018-11-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | インシトゥで取り出すことができる静電チャック |
KR101812666B1 (ko) | 2013-08-05 | 2017-12-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 얇은 기판 취급을 위한 정전 캐리어 |
US10297483B2 (en) | 2013-09-20 | 2019-05-21 | Applied Materials, Inc. | Substrate carrier with integrated electrostatic chuck |
US9460950B2 (en) | 2013-12-06 | 2016-10-04 | Applied Materials, Inc. | Wafer carrier for smaller wafers and wafer pieces |
WO2015171207A1 (en) | 2014-05-09 | 2015-11-12 | Applied Materials, Inc. | Substrate carrier system and method for using the same |
US9959961B2 (en) | 2014-06-02 | 2018-05-01 | Applied Materials, Inc. | Permanent magnetic chuck for OLED mask chucking |
CN105082717A (zh) * | 2015-09-11 | 2015-11-25 | 武汉华星光电技术有限公司 | 真空贴合设备与基板贴合方法 |
CN108656699A (zh) * | 2017-03-29 | 2018-10-16 | 阳程科技股份有限公司 | 可吸附曲面物件的装置及应用该装置的贴合设备 |
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JP4526759B2 (ja) | 2002-09-27 | 2010-08-18 | 筑波精工株式会社 | 静電保持装置及びそれを用いた搬送装置又はステージ |
JP4184771B2 (ja) | 2002-11-27 | 2008-11-19 | 株式会社アルバック | アライメント装置、成膜装置 |
WO2005047981A2 (en) * | 2003-11-10 | 2005-05-26 | Nikon Corporation | Thermophoretic techniques for protecting reticles from contaminants |
JP2006097065A (ja) | 2004-09-29 | 2006-04-13 | Tsukuba Seiko Co Ltd | アライメント装置及びそれを用いたアライメント方法 |
JP5044395B2 (ja) * | 2005-05-20 | 2012-10-10 | 筑波精工株式会社 | 静電保持装置及びそれを用いた静電ピンセット |
-
2006
- 2006-03-09 JP JP2006064020A patent/JP4802018B2/ja active Active
-
2007
- 2007-03-09 CN CN2007800084787A patent/CN101401292B/zh active Active
- 2007-03-09 WO PCT/JP2007/054642 patent/WO2007102598A1/ja active Application Filing
- 2007-03-09 KR KR1020087024079A patent/KR101358578B1/ko active IP Right Grant
- 2007-03-09 TW TW096108204A patent/TWI431715B/zh active
- 2007-03-09 US US12/224,859 patent/US8125756B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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TWI431715B (zh) | 2014-03-21 |
CN101401292B (zh) | 2012-07-04 |
JP2007242931A (ja) | 2007-09-20 |
US20090021885A1 (en) | 2009-01-22 |
US8125756B2 (en) | 2012-02-28 |
CN101401292A (zh) | 2009-04-01 |
WO2007102598A1 (ja) | 2007-09-13 |
KR20090006076A (ko) | 2009-01-14 |
KR101358578B1 (ko) | 2014-02-04 |
TW200740677A (en) | 2007-11-01 |
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