WO2006117871A1 - 静電チャック装置 - Google Patents
静電チャック装置 Download PDFInfo
- Publication number
- WO2006117871A1 WO2006117871A1 PCT/JP2005/008227 JP2005008227W WO2006117871A1 WO 2006117871 A1 WO2006117871 A1 WO 2006117871A1 JP 2005008227 W JP2005008227 W JP 2005008227W WO 2006117871 A1 WO2006117871 A1 WO 2006117871A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrostatic chuck
- area
- electrode
- electrode pattern
- feeding
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Definitions
- the present invention relates to a glass substrate such as CF glass or TFT glass, a synthetic resin substrate, or the like, for example, in the process of manufacturing a flat panel display such as a liquid crystal display (LCD) or plasma display (PDP).
- An electrostatic chuck apparatus used for a substrate assembling apparatus including a substrate bonding machine for adsorbing, holding and bonding workpieces, a substrate transport apparatus for transporting a substrate, or a semiconductor manufacturing apparatus for processing a workpiece such as a silicon wafer.
- the present invention relates to an electrostatic chuck device that electrostatically attracts a workpiece by applying a voltage to electrodes disposed in a planar shape facing the workpiece.
- an electrostatic chuck unit is configured by electrically wiring the electrode terminals, which are conducted to the internal electrodes of the respective electrostatic chucks, to each other on the back side of the pedestal through the through holes of the base plate (for example, patent Reference 1).
- Patent Document 1 Japanese Patent Application Laid-Open No. 2002-252274 (page 1-6, FIG. 1-7)
- glass cullet debris and the like may be transported onto a glass substrate, particularly during setup. As the cullet is drawn between the electrostatic chuck and the electrostatic chuck accompanying the electrostatic adsorption with the substrate, the film surface of the electrostatic chuck may be partially broken and fail.
- the film surface of the electrostatic chuck is partially destroyed, the entire function of the electrostatic chuck is stopped and the electrode to which high voltage is applied is exposed, so it is used especially in a near vacuum condition like a vacuum bonding machine. In the case where it is used, there is a risk of causing a problem of causing an over current, such as arc discharge with the ground portion of the metal pedestal, or plasma discharge in the Paschen region during vacuuming.
- the invention according to claim 1 aims to return the workpiece so as to be able to be suctioned in a short time by a simple process.
- the invention described in claim 2 prevents the secondary damage of the electrode due to the diffusion of the crevice accompanying the cutting operation while facilitating the cutting operation of each area. Purpose.
- the invention according to claim 3 is, in addition to the object of the invention according to claim 1 or 2, because the purpose is to secure the space occupied by the power feeding section without relatively reducing the electrostatic adsorption function. is there.
- the invention according to claim 4 aims to suppress an adverse effect on a work even if it partially protrudes along with the cutting process of the feeding part. It is
- the invention described in claim 5 is a selective cutting portion The purpose is to prevent the discharge of the metal and the metal pedestal.
- the invention according to claim 6 covers the object of the invention according to claims 1, 2, 3, 4 or 5, and can perform simple and reliable sealing treatment in a short time and reuse of the sealing member.
- the purpose is to make it possible.
- the invention according to claim 1 of the present invention divides an electrode into a plurality of areas in a plane parallel to the bulk and separates an electrode pattern independent of each area.
- a feeding part for each electrode pattern is provided for each area, and an optional feeding part is cut off to partially stop feeding to an electrode pattern arranged in an optional area. It is said that.
- the plurality of feed portions are arranged close to each other and slits are formed along the feed portions in the vicinity of the feed portions. It is characterized in that the configuration is added.
- the plurality of feeding portions are disposed in an outer region of an electrostatic chuck functional surface provided with an electrode pattern facing the workpiece. It is characterized in that
- the invention according to a fourth aspect is characterized in that a configuration in which a recess is formed in a pedestal facing the feeding portion is added to the configuration according to the first aspect, the second aspect or the third aspect.
- the invention according to claim 5 is characterized in that, in addition to the configuration according to the invention according to claim 4, a configuration in which the selective cut portion of the power feeding portion is sealed in the recess of the pedestal is added.
- the annular seal material is disposed and sealed so as to surround the selective cut portion of the power supply unit. It is characterized by the addition of the configuration.
- the electrode is divided into a plurality of areas in a plane parallel to the work, and an independent electrode pattern is provided for each of these areas, and each electrode pattern is The feed section of each of the areas is provided for each area, the optional feed section is disconnected, and the feed to the electrode pattern disposed in the optional area is partially stopped to provide a plurality of areas. Even if part of the film surface is broken, the electrode pattern in this broken area does not selectively function as an electrostatic chuck, but the electrode patterns in the other areas are as an electrostatic chuck. Function.
- the work can be returned to the workable state in a short time by simple processing.
- a plurality of feeding parts are arranged in close proximity to each other, and slits are provided along the feeding parts in the vicinity of the feeding parts.
- a cutting tool such as a cutter or scissors from the slit, one of the targeted power feeding parts can be cut, and a crack is formed in the film that constitutes the electrode from the cutting edge. It does not occur.
- the outside of the electrostatic chuck functional surface is provided with an electrode pattern in which a plurality of power feeding parts face the metal.
- cutting of the feeding portion is performed by forming a recess in the base facing the feeding portion. Even if the portion protrudes into a convex shape toward the workpiece, the cutting convex portion enters into the recess when the workpiece is electrostatically attracted and does not partially press against the workpiece. Therefore, even if it partially protrudes along with the cutting process of the power feeding unit, the adverse effect on the workpiece can be suppressed.
- the selective cut portion of the feed portion is sealed by sealing the selective cut portion of the feed portion within the recess of the pedestal. Not exposed Therefore, discharge of the selective cutting portion and the metal pedestal can be prevented.
- annular seal material is disposed so as to surround a selective cut portion of the power feeding portion. By sealing, the cut portion and its external atmosphere are shut off via the annular seal material.
- the electrostatic chuck device A of the present invention A power W is disposed in a substrate bonding machine where a glass substrate such as a liquid crystal display (LCD) panel is electrostatically attracted and bonded.
- a glass substrate such as a liquid crystal display (LCD) panel is electrostatically attracted and bonded.
- LCD liquid crystal display
- the substrate bonding machine two substrates as work W are held on opposing surfaces of holding plates 11 arranged one on top of the other, and the inside of a closed space (not shown) partitioned around them is predetermined. After reaching the degree of vacuum, the upper and lower holding plates are adjusted and moved relatively in the XY 0 direction, alignment between the substrates is performed, and then the upper substrate is forcibly peeled from the upper holding plate to lower the lower substrate. The two are sealed and stacked by instantaneous pressure bonding to the upper annular adhesive or sealing material (not shown), and then the pressure difference between the two substrates is determined by the pressure difference between the two substrates. The bonding process is completed by pressurizing to the gap of.
- a cover for deploying the electrostatic chuck device A of the present invention or a plurality of electrostatic chuck devices A are bonded to each other over the whole.
- An electrostatic chuck device A includes an electrode 1 formed in a planar shape so as to face a work W as shown in FIGS. 1 to 5, a dielectric layer 2 laminated on the electrode 1, and It is a film-like or plate-like laminated structure consisting of a work W and a pedestal 3 provided on the opposite side along these lines.
- the back surface 3 a of the seat 3 is detachably attached to the front surface 1 la of the holding plate 11.
- the dielectric layer 2 is an elastically deformable insulating organic material that is an engineering plastic such as polyimide, polyetheretherketone (PEEK), polyethylene naphthalate (PEN), etc., and has two or three or more layers or one layer. Force to form a thin film, or thin, for example, with ceramics such as A10, SiC, A1N, ZrO, or other inorganic materials.
- an engineering plastic such as polyimide, polyetheretherketone (PEEK), polyethylene naphthalate (PEN), etc.
- PEN polyethylene naphthalate
- It is formed in a plate shape, and is bonded and laminated only to both surfaces of the electrode 1 formed in a surface shape or only on the work side surface.
- the dielectric layer 2 made of an organic material such as polyimide or PEEK is laminated on the work side surface of the electrode 1, there is an advantage that the electrical characteristics are excellent, and the dielectric layer 2 made of ceramic is laminated. In this case, since the dielectric layer 2 itself is hard, the dielectric layer 2 is less likely to be scratched even when a hard foreign object such as a glass force notch (piece) is drawn between the workpiece W and the substrate. Ru.
- the back surface of the dielectric layer 2 or the back surface of the electrode 1 and the pedestal 3 are integrally attached to each other with an adhesive layer (not shown) such as an adhesive or an adhesive interposed therebetween.
- the electrode 1 is divided into a plurality of areas la in a plane parallel to the work W as shown in FIGS. 1 and 4, and an independent electrode pattern lb is provided for each of the areas la.
- a feed unit lc for individually controlling the feed to each electrode pattern lb is provided for each area la, and an arbitrary feed unit lc is cut by a cutting method described later to form an arbitrary area la. The feed to the electrode pattern lb placed in the section is partially stopped.
- the plurality of feeding parts lc are arranged at the inner region of the electrostatic chuck functional surface 1 'provided with the electrode pattern 1b opposite to the work W as shown in FIG.
- the electrostatic chuck function surface 1 ' is disposed in the outer region, and among the plurality of power supply units lc according to the illustrated example, those with the area la close to each other are collected, respectively, It is preferable to arrange them separately, or to arrange all the feeding parts lc centrally at a predetermined location.
- Slits (cuts) Id having an appropriate length and approximately parallel along the feeding portion lc are formed in advance in the vicinity of the feeding portion lc and the dielectric layer 2 stacked on the feeding portion 1c while arranging them close and approximately parallel.
- a cutter such as a cutter or the like can be inserted in a later step, and only the optional power supply portion lc can be selectively cut by the cutter. ing.
- a plurality of slits (cuts) Id are cut out substantially in parallel between the feeding parts lc arranged substantially in parallel.
- a concave portion 3b is formed at a position facing the portion lc, and even if the selective cutting process described above causes the workpiece to project toward the cut portion 1 force work W of the optional feed portion lc, the workpiece is not deformed. At the time of electrostatic adsorption of W, by making this cutting convex portion into the recess 3b, the cutting convex portion does not partially press against the workpiece W more strongly than the other portions. To do.
- the pedestal 3 is formed of, for example, a metal such as aluminum or a conductive material other than that, it is selectively cut by the above-described cutting process through the insulator 4 made of an insulating material.
- the cut portion lc 'of the optional power supply portion lc it is possible to prevent the exposure of the high-voltage forced cut portion lc', and phenomena such as "plasma discharge” and "arc discharge". Do not occur.
- the first embodiment is a bipolar electrostatic chuck in which the electrode pattern lb has positive and negative electrodes as shown in FIGS. 1 to 3, and these positive and negative electrode patterns are shown in FIGS. 1 to 3.
- dielectric layer 2 which is also engineering plastic such as polyimide and polyetheretherketone (PEEK)
- PEEK polyimide and polyetheretherketone
- an electrostatic chuck film having an integral structure is formed, and the electrostatic chuck film is bonded to the metal pedestal 3 so that the recess 3 b is formed on the surface 3 c of the pedestal 3 to face the feeding portion lc. It shows the case where it is done.
- the area la is rectangular, and the positive electrode and the negative electrode of the electrode pattern lb are respectively formed in a comb-like shape fitting each other on the same plane, for example, about 500 mm ⁇ 300 mm Arrange the pair of electrode patterns lb in the area la so as to fit each other!
- a dielectric layer (insulating layer) made of an insulating material such as a polyimide film as disclosed in, for example, JP-A-2005-64105 is sandwiched between An electrostatic chuck or a single layer in which a first electrode pattern and a second electrode pattern are laminated along both surfaces and the surfaces of both electrode patterns are coated with a dielectric layer (insulating thin film) such as a polyimide film. It is also possible to use polar electrostatic chucks.
- the electrode patterns lb of the three areas la arranged in a line are
- a feed section lc is formed, and the grouped feed sections lc are distributed and disposed in a space defined between the electrode patterns lb. ing.
- one of the forces of the two slits Id arranged across the feeding portion lc of the broken area la is also directed to the other, for example, a cutter such as a cutter or the like. If this is done, it is possible to selectively and easily disconnect only the targeted feeding part lc.
- the cut portion lc 'of the power feeding portion lc subjected to the selective cutting process may have a shape projecting toward the work W, and the wire after cutting may be exposed and may be exposed to the air. Therefore, after cutting the cut portion lc 'of the feeding portion lc into the recess 3b of the pedestal 3 as shown in FIG. 3 (a) (b), the sealing process is performed via the insulator 4 serving as the insulating material. It is.
- the insulator 4 is laminated on the inner bottom surface of the recess 3 b, and the insulator 4 is formed on the insulator 4. Then, the cut portion lc ′ of the cut feed portion lc is molded with a covering material 5 such as an insulating adhesive and sealed and fixed, so that the sealing process can be easily performed.
- a covering material 5 such as an insulating adhesive
- the entrapped cullet is removed, and if the surface of the broken dielectric layer 2 is polished and planarized, the subsequent continuous use can be realized. It becomes possible.
- the electrode pattern lb in the destroyed area la does not function as an electrostatic chuck, but the electrode pattern lb in the other areas la functions as an electrostatic chuck. Therefore, since it can be used continuously even after that, it is possible to return the work W to be able to be adsorbed in a short time by a simple cutting process as work.
- the area la by increasing the number of divisions of the area la, it is possible to reduce the area in which the electrostatic adsorption does not function when a part breaks down due to breakage or the like. If the area la is divided, it is necessary to increase the number of divisions of the area la, as a wiring space for leading the wiring to the electrode pattern lb force feed portion lc and a space for securing the feed portion lc are required. Since the ratio of the space occupied by the wiring space and the feed section lc is also increased to the electrode pattern lb force feed section lc which originally does not function as an electrostatic chuck, the area of the electrostatic chuck functional surface area is also effective. The area is reduced.
- the electrode pattern lb force wiring space for feeding portion lc is also effective for electrostatic adsorption. Can be used without reducing the effective area of adsorption.
- the broken electrostatic chuck film is discarded together with the covering material 5 such as the insulating adhesive molded on the insulator 4 of the recess 3 b, and a new electrostatic chip is discarded. If it is replaced with a chuck film, the pedestal 3 can be reused, and the cost can be reduced compared to the case where the entire electrostatic chuck A including the pedestal 3 is replaced.
- Example 2
- the plurality of feeding portions lc shown in FIGS. 4 to 5 are provided on the outer region of the electrostatic chuck functional surface 1 ′ provided with the electrode pattern lb so as to face the workpiece W.
- an electrostatic chuck film having a bendable integral structure is formed, and a force to fold and fix the feeding portions lc projecting outward along the side surface 3d of the pedestal 3 or the back surface 3a of the pedestal 3 It is bent so as to reach to the end and adhered and fixed, and the recess 3b is formed in the side 3d or the back 3a of these pedestals 3 and the cut portion lc 'of the cut feed portion lc is sealed.
- the other configuration is the same as the first embodiment shown in FIGS.
- the same function and effect as the first embodiment described above can be obtained, and further, the wiring is routed from the electrode pattern lb to the feeding portion lc.
- the electrostatic chuck Functional aspect Since the wiring space only increases from the electrode pattern lb which originally does not function as an electrostatic chuck to the feeding portion lc with respect to the region of /, the effective area of the adsorption region is secured wider than in the first embodiment.
- the electrostatic chuck device A of the second embodiment when the electrostatic chuck device A of the second embodiment is installed in a substrate bonding machine that electrostatically attracts, applies pressure, and bonds a glass substrate such as a liquid crystal display panel as the work W, the pedestal 3 Since the recess 3b is not formed on the surface 3c, there is an advantage that there is no possibility of pressure unevenness at all when bonding the glass substrates.
- the bendable electrostatic chuck film in which the plurality of feed portions lc are dispersedly disposed in the outer region of the electrostatic chuck function surface is used.
- lc bends and adheres along the side 3d or the back 3a of the pedestal 3, and these sides 3d or
- the sealing portion 3 is sealed by inserting a cut portion lc 'of the cut feed portion lc into the concave portion 3b formed on the back surface 3a so as to face the feed portion lc in an open / close sealing structure.
- Constitutional force Different from the embodiment 1 shown in FIGS. 1 to 3 and the embodiment 2 shown in FIGS. 4 to 5, the other configuration is the embodiment 1 shown in FIGS. 1 to 3 and 4 to 4 This is the same as Example 2 shown in FIG.
- the pedestal 3 is made of metal, and the openable / closable blocks 4a and 4b are disposed in the recess 3b as the insulator 4 made of the insulating material, and the blocks 4a and 4b are provided. Insert the cut part lc 'of the cut off power supply part lc, and seal and fix it with an annular seal material 6 such as an O-ring so as to surround it.
- annular seal member 6 such as an O-ring is disposed between the block 4a and 4b on both sides of the feed portion lc, and according to the experiment, one of them is either Sealing was possible with only the annular seal material 6 of
- the blocks 4a and 4b are not limited to the illustrated shape, and can be changed to other shapes, and these blocks 4a and 4b are detachably connected by a fastening member 4c such as a screw. It is also possible to connect with other species.
- Example 3 shown in FIGS. 6 to 7 the same working effects as in Example 1 and Example 2 described above can be obtained, and in addition, the effects shown in Example 1 and Example 2 can be obtained.
- the simple and reliable sealing process can be performed in a short time, and the sealing member can be reused.
- the present invention is not limited to this, and a substrate assembling apparatus other than this substrate bonding machine and a substrate for transporting a substrate It may be installed in a transfer device, or substrates other than the glass substrate for LCD panel may be electrostatically attracted and held.
- the present invention is not limited to this.
- the same effect as the vacuum bonding machine described above can be obtained.
- the present invention is not limited to this, and it may have a fan-like shape or a concentric shape other than the illustrated example. Even in this case, the same function and effect as those of the first and second embodiments described above can be obtained.
- the invention is not limited thereto.
- the dielectric layer 2 consisting of an organic material is laminated only on the work side surface of the electrode pattern lb, and the dielectric layer 2 consisting of an inorganic material is laminated on the back side, or other insulating organic materials Alternatively, an insulating layer made of another material may be laminated, or a dielectric layer 2 made of an inorganic material may be laminated on the surface of the electrode pattern lb on the side of the baking.
- FIG. 1 is a cross-sectional front view showing Embodiment 1 of the electrostatic chuck device of the present invention.
- Fig. 2 is a partially enlarged cross-sectional front view of the main part of Fig. 1;
- Fig. 3 is an enlarged longitudinal side view along line (3)-(3) in Fig. 2, where (a) shows the normal state and (b) shows the time when the feeding is stopped.
- FIG. 4 is a cross-sectional front view showing Embodiment 2 of the electrostatic chuck device of the present invention.
- Fig. 5 is a vertical cross-sectional side view of a partially enlarged main part, in which (a) shows a normal state and (b) shows a power supply stop state.
- FIG. 6 is a partially enlarged vertical cross-sectional side view showing Embodiment 3 of the electrostatic chuck device of the present invention, and shows the time when feeding is stopped.
- FIG. 7 It is a cross-sectional bottom view in which the main parts are partially enlarged.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020077026621A KR100940549B1 (ko) | 2005-04-28 | 2005-04-28 | 정전척 장치 |
JP2006552399A JP3995706B2 (ja) | 2005-04-28 | 2005-04-28 | 静電チャック装置 |
PCT/JP2005/008227 WO2006117871A1 (ja) | 2005-04-28 | 2005-04-28 | 静電チャック装置 |
CNB2005800496044A CN100481369C (zh) | 2005-04-28 | 2005-04-28 | 静电夹盘装置 |
TW095102287A TWI381479B (zh) | 2005-04-28 | 2006-01-20 | Electrostatic chuck device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/008227 WO2006117871A1 (ja) | 2005-04-28 | 2005-04-28 | 静電チャック装置 |
Publications (1)
Publication Number | Publication Date |
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WO2006117871A1 true WO2006117871A1 (ja) | 2006-11-09 |
Family
ID=37307678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/008227 WO2006117871A1 (ja) | 2005-04-28 | 2005-04-28 | 静電チャック装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3995706B2 (ja) |
KR (1) | KR100940549B1 (ja) |
CN (1) | CN100481369C (ja) |
TW (1) | TWI381479B (ja) |
WO (1) | WO2006117871A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8023246B2 (en) | 2007-05-08 | 2011-09-20 | Shinko Electric Industries Co., Ltd. | Electrostatic chuck and method of manufacturing the same |
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US8581598B2 (en) * | 2008-10-20 | 2013-11-12 | Creative Technology Corporation | Method for inspecting electrostatic chuck, and electrostatic chuck apparatus |
JP5328726B2 (ja) | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
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KR101174875B1 (ko) | 2010-01-14 | 2012-08-17 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101193186B1 (ko) | 2010-02-01 | 2012-10-19 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101156441B1 (ko) | 2010-03-11 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
KR101202348B1 (ko) | 2010-04-06 | 2012-11-16 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
KR101223723B1 (ko) | 2010-07-07 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101678056B1 (ko) | 2010-09-16 | 2016-11-22 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR101723506B1 (ko) | 2010-10-22 | 2017-04-19 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
KR101738531B1 (ko) | 2010-10-22 | 2017-05-23 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
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KR102162797B1 (ko) | 2013-12-23 | 2020-10-08 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 |
KR102155584B1 (ko) * | 2018-06-25 | 2020-09-14 | (주) 엔피홀딩스 | 라미네이팅 장치의 난반사 방지형 정전척 및 라미네이팅 장치 |
KR102155583B1 (ko) * | 2018-06-25 | 2020-09-14 | (주) 엔피홀딩스 | 라미네이팅 장치의 배면 전극형 정전척과, 이의 제조 방법 및 라미네이팅 장치 |
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JPH05291562A (ja) * | 1992-04-09 | 1993-11-05 | Toshiba Corp | 静電チャック装置 |
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US5801915A (en) * | 1994-01-31 | 1998-09-01 | Applied Materials, Inc. | Electrostatic chuck having a unidirectionally conducting coupler layer |
JP4493251B2 (ja) * | 2001-12-04 | 2010-06-30 | Toto株式会社 | 静電チャックモジュールおよび基板処理装置 |
KR100511854B1 (ko) * | 2002-06-18 | 2005-09-02 | 아네르바 가부시키가이샤 | 정전 흡착 장치 |
CN100345274C (zh) * | 2003-02-27 | 2007-10-24 | 株式会社日立高新技术 | 静电吸盘的制造方法 |
JP5004436B2 (ja) * | 2005-05-23 | 2012-08-22 | 東京エレクトロン株式会社 | 静電吸着電極および処理装置 |
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2005
- 2005-04-28 JP JP2006552399A patent/JP3995706B2/ja not_active Expired - Fee Related
- 2005-04-28 WO PCT/JP2005/008227 patent/WO2006117871A1/ja active Application Filing
- 2005-04-28 KR KR1020077026621A patent/KR100940549B1/ko not_active IP Right Cessation
- 2005-04-28 CN CNB2005800496044A patent/CN100481369C/zh not_active Expired - Fee Related
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2006
- 2006-01-20 TW TW095102287A patent/TWI381479B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05291562A (ja) * | 1992-04-09 | 1993-11-05 | Toshiba Corp | 静電チャック装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8023246B2 (en) | 2007-05-08 | 2011-09-20 | Shinko Electric Industries Co., Ltd. | Electrostatic chuck and method of manufacturing the same |
Also Published As
Publication number | Publication date |
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TWI381479B (zh) | 2013-01-01 |
KR20080009285A (ko) | 2008-01-28 |
CN101167174A (zh) | 2008-04-23 |
JP3995706B2 (ja) | 2007-10-24 |
JPWO2006117871A1 (ja) | 2008-12-18 |
TW200644148A (en) | 2006-12-16 |
KR100940549B1 (ko) | 2010-02-10 |
CN100481369C (zh) | 2009-04-22 |
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