TWI594088B - 用於先進半導體應用之離子植入後剝離液 - Google Patents
用於先進半導體應用之離子植入後剝離液 Download PDFInfo
- Publication number
- TWI594088B TWI594088B TW099125180A TW99125180A TWI594088B TW I594088 B TWI594088 B TW I594088B TW 099125180 A TW099125180 A TW 099125180A TW 99125180 A TW99125180 A TW 99125180A TW I594088 B TWI594088 B TW I594088B
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- photoresist
- alcohol
- ion implantation
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/68—Wet etching of insulating materials
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22976009P | 2009-07-30 | 2009-07-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201128327A TW201128327A (en) | 2011-08-16 |
| TWI594088B true TWI594088B (zh) | 2017-08-01 |
Family
ID=43137613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099125180A TWI594088B (zh) | 2009-07-30 | 2010-07-29 | 用於先進半導體應用之離子植入後剝離液 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9484218B2 (https=) |
| EP (1) | EP2460177B1 (https=) |
| JP (1) | JP6165442B2 (https=) |
| KR (1) | KR101746879B1 (https=) |
| CN (1) | CN102473638B (https=) |
| IL (1) | IL217708A (https=) |
| MY (1) | MY185453A (https=) |
| SG (2) | SG10201404328QA (https=) |
| TW (1) | TWI594088B (https=) |
| WO (1) | WO2011012559A2 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| RU2585322C2 (ru) | 2011-03-18 | 2016-05-27 | Басф Се | Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее |
| CN104093790B (zh) * | 2011-11-29 | 2016-10-12 | 涂料外国Ip有限公司 | 非水溶剂组合物及其作为隔离液体的用途 |
| TWI588253B (zh) | 2012-03-16 | 2017-06-21 | 巴地斯顏料化工廠 | 光阻剝除與清潔組合物及其製備方法與用途 |
| US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
| JP6233779B2 (ja) * | 2013-11-18 | 2017-11-22 | 富士フイルム株式会社 | 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法 |
| JP2015118125A (ja) * | 2013-11-18 | 2015-06-25 | 富士フイルム株式会社 | 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法 |
| EP3089382B1 (en) | 2013-12-25 | 2018-11-21 | Huawei Marine Networks Co., Limited | Optical branching unit for optical add drop multiplexing |
| US20150219996A1 (en) * | 2014-02-06 | 2015-08-06 | Dynaloy, Llc | Composition for removing substances from substrates |
| WO2016084860A1 (ja) * | 2014-11-27 | 2016-06-02 | 富士フイルム株式会社 | 除去液、これを用いた除去方法および半導体基板製品の製造方法 |
| KR101850192B1 (ko) * | 2015-12-02 | 2018-04-19 | 연세대학교 산학협력단 | 유기용매를 이용한 포토레지스트 제거방법 |
| JP6536464B2 (ja) * | 2016-04-26 | 2019-07-03 | 信越化学工業株式会社 | 洗浄剤組成物及び薄型基板の製造方法 |
| BR112018013322B1 (pt) | 2016-05-10 | 2022-12-06 | Atotech Deutschland Gmbh | Composição de separação não aquosa, seu uso e processo de separação de um revestimento orgânico de um substrato |
| JP7204760B2 (ja) * | 2018-02-14 | 2023-01-16 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | フォトレジストリムーバ組成物 |
| TWI809992B (zh) * | 2021-07-27 | 2023-07-21 | 元瀚材料股份有限公司 | 去光阻組成物及其使用方法 |
| CN116285995A (zh) * | 2021-12-20 | 2023-06-23 | 李长荣化学工业股份有限公司 | 用于移除硅的蚀刻组成物及使用其移除硅的方法 |
| JP7752541B2 (ja) | 2022-01-21 | 2025-10-10 | 関東化学株式会社 | フォトレジスト剥離組成物 |
| JP7290195B1 (ja) * | 2022-10-19 | 2023-06-13 | Jsr株式会社 | 半導体処理用組成物及び処理方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040147421A1 (en) * | 2001-12-04 | 2004-07-29 | Charm Richard William | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091103A (en) * | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
| US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
| US5811358A (en) | 1997-01-03 | 1998-09-22 | Mosel Vitelic Inc. | Low temperature dry process for stripping photoresist after high dose ion implantation |
| JPH1184686A (ja) | 1997-09-01 | 1999-03-26 | Mitsubishi Gas Chem Co Inc | レジスト剥離剤組成物 |
| US6417112B1 (en) * | 1998-07-06 | 2002-07-09 | Ekc Technology, Inc. | Post etch cleaning composition and process for dual damascene system |
| KR100288769B1 (ko) * | 1998-07-10 | 2001-09-17 | 윤종용 | 포토레지스트용스트리퍼조성물 |
| US6368421B1 (en) * | 1998-07-10 | 2002-04-09 | Clariant Finance (Bvi) Limited | Composition for stripping photoresist and organic materials from substrate surfaces |
| JP2001215736A (ja) | 2000-02-04 | 2001-08-10 | Jsr Corp | フォトレジスト用剥離液組成物、剥離方法及び回路基板 |
| JP3738996B2 (ja) * | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
| US6524936B2 (en) | 2000-12-22 | 2003-02-25 | Axcelis Technologies, Inc. | Process for removal of photoresist after post ion implantation |
| WO2002095500A1 (en) * | 2001-05-21 | 2002-11-28 | Dongjin Semichem Co., Ltd. | Resist remover composition |
| JP2002357908A (ja) | 2001-05-31 | 2002-12-13 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
| CN100403169C (zh) * | 2001-07-13 | 2008-07-16 | Ekc技术公司 | 亚砜吡咯烷酮链烷醇胺剥离和清洗组合物 |
| US6551973B1 (en) * | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
| JP4045408B2 (ja) | 2002-01-31 | 2008-02-13 | 三菱瓦斯化学株式会社 | 銅配線基板向け洗浄液およびこれを使用したレジスト剥離方法 |
| JP2003228179A (ja) * | 2002-01-31 | 2003-08-15 | Mitsubishi Gas Chem Co Inc | 銅配線基板向けアミン含有レジスト剥離液および剥離方法 |
| US20030148624A1 (en) | 2002-01-31 | 2003-08-07 | Kazuto Ikemoto | Method for removing resists |
| US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| JP2004117889A (ja) | 2002-09-26 | 2004-04-15 | Jsr Corp | フォトレジスト用剥離液組成物 |
| US20050089489A1 (en) * | 2003-10-22 | 2005-04-28 | Carter Melvin K. | Composition for exfoliation agent effective in removing resist residues |
| CN101198683B (zh) * | 2005-04-15 | 2011-09-14 | 高级技术材料公司 | 使用溶剂体系内的自组装单层除去高剂量离子注入光致抗蚀剂 |
| JP2008537343A (ja) * | 2005-04-15 | 2008-09-11 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物 |
| JP4678673B2 (ja) * | 2005-05-12 | 2011-04-27 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
| EP1945748A4 (en) * | 2005-10-13 | 2009-01-07 | Advanced Tech Materials | COMPATIBLE PHOTOLACK AND / OR SURFACE ANTIREFLEXION COATING COMPOSITION COMPRISED WITH METALS |
| US8263539B2 (en) * | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| JP2011502281A (ja) | 2007-10-31 | 2011-01-20 | イー.ケー.シー.テクノロジー.インコーポレーテッド | フォトレジスト剥離用化合物 |
| WO2010127941A1 (en) * | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
-
2010
- 2010-07-26 MY MYPI2012000352A patent/MY185453A/en unknown
- 2010-07-26 SG SG10201404328QA patent/SG10201404328QA/en unknown
- 2010-07-26 CN CN201080033645.5A patent/CN102473638B/zh active Active
- 2010-07-26 US US13/387,787 patent/US9484218B2/en active Active
- 2010-07-26 WO PCT/EP2010/060762 patent/WO2011012559A2/en not_active Ceased
- 2010-07-26 SG SG2012005443A patent/SG177755A1/en unknown
- 2010-07-26 JP JP2012522125A patent/JP6165442B2/ja not_active Expired - Fee Related
- 2010-07-26 EP EP10736715.3A patent/EP2460177B1/en active Active
- 2010-07-26 KR KR1020127005545A patent/KR101746879B1/ko active Active
- 2010-07-29 TW TW099125180A patent/TWI594088B/zh active
-
2012
- 2012-01-24 IL IL217708A patent/IL217708A/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040147421A1 (en) * | 2001-12-04 | 2004-07-29 | Charm Richard William | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011012559A2 (en) | 2011-02-03 |
| CN102473638A (zh) | 2012-05-23 |
| SG10201404328QA (en) | 2014-10-30 |
| TW201128327A (en) | 2011-08-16 |
| JP2013500503A (ja) | 2013-01-07 |
| IL217708A0 (en) | 2012-03-29 |
| IL217708A (en) | 2017-07-31 |
| KR20120041777A (ko) | 2012-05-02 |
| SG177755A1 (en) | 2012-03-29 |
| CN102473638B (zh) | 2015-02-18 |
| EP2460177A2 (en) | 2012-06-06 |
| RU2012107135A (ru) | 2013-09-10 |
| MY185453A (en) | 2021-05-19 |
| KR101746879B1 (ko) | 2017-06-14 |
| WO2011012559A3 (en) | 2011-03-24 |
| JP6165442B2 (ja) | 2017-07-19 |
| US20120129747A1 (en) | 2012-05-24 |
| US9484218B2 (en) | 2016-11-01 |
| EP2460177B1 (en) | 2016-03-23 |
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