CN102473638B - 用于高级半导体应用的离子植入后剥离剂 - Google Patents

用于高级半导体应用的离子植入后剥离剂 Download PDF

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Publication number
CN102473638B
CN102473638B CN201080033645.5A CN201080033645A CN102473638B CN 102473638 B CN102473638 B CN 102473638B CN 201080033645 A CN201080033645 A CN 201080033645A CN 102473638 B CN102473638 B CN 102473638B
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China
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composition
solvent
photoresist
propanol
substrate
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Chinese (zh)
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CN102473638A (zh
Inventor
陈建行
沈美卿
詹嘉豪
A·克里普
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BASF SE
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BASF SE
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/68—Wet etching of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
CN201080033645.5A 2009-07-30 2010-07-26 用于高级半导体应用的离子植入后剥离剂 Active CN102473638B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22976009P 2009-07-30 2009-07-30
US61/229,760 2009-07-30
PCT/EP2010/060762 WO2011012559A2 (en) 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application

Publications (2)

Publication Number Publication Date
CN102473638A CN102473638A (zh) 2012-05-23
CN102473638B true CN102473638B (zh) 2015-02-18

Family

ID=43137613

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080033645.5A Active CN102473638B (zh) 2009-07-30 2010-07-26 用于高级半导体应用的离子植入后剥离剂

Country Status (10)

Country Link
US (1) US9484218B2 (https=)
EP (1) EP2460177B1 (https=)
JP (1) JP6165442B2 (https=)
KR (1) KR101746879B1 (https=)
CN (1) CN102473638B (https=)
IL (1) IL217708A (https=)
MY (1) MY185453A (https=)
SG (2) SG10201404328QA (https=)
TW (1) TWI594088B (https=)
WO (1) WO2011012559A2 (https=)

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US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
CN104093790B (zh) * 2011-11-29 2016-10-12 涂料外国Ip有限公司 非水溶剂组合物及其作为隔离液体的用途
TWI588253B (zh) 2012-03-16 2017-06-21 巴地斯顏料化工廠 光阻剝除與清潔組合物及其製備方法與用途
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6233779B2 (ja) * 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
JP2015118125A (ja) * 2013-11-18 2015-06-25 富士フイルム株式会社 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法
EP3089382B1 (en) 2013-12-25 2018-11-21 Huawei Marine Networks Co., Limited Optical branching unit for optical add drop multiplexing
US20150219996A1 (en) * 2014-02-06 2015-08-06 Dynaloy, Llc Composition for removing substances from substrates
WO2016084860A1 (ja) * 2014-11-27 2016-06-02 富士フイルム株式会社 除去液、これを用いた除去方法および半導体基板製品の製造方法
KR101850192B1 (ko) * 2015-12-02 2018-04-19 연세대학교 산학협력단 유기용매를 이용한 포토레지스트 제거방법
BR112018013322B1 (pt) 2016-05-10 2022-12-06 Atotech Deutschland Gmbh Composição de separação não aquosa, seu uso e processo de separação de um revestimento orgânico de um substrato
JP7204760B2 (ja) * 2018-02-14 2023-01-16 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトレジストリムーバ組成物
TWI809992B (zh) * 2021-07-27 2023-07-21 元瀚材料股份有限公司 去光阻組成物及其使用方法
CN116285995A (zh) * 2021-12-20 2023-06-23 李长荣化学工业股份有限公司 用于移除硅的蚀刻组成物及使用其移除硅的方法
JP7752541B2 (ja) 2022-01-21 2025-10-10 関東化学株式会社 フォトレジスト剥離組成物
JP7290195B1 (ja) * 2022-10-19 2023-06-13 Jsr株式会社 半導体処理用組成物及び処理方法

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US6551973B1 (en) * 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
US20040106532A1 (en) * 2002-10-10 2004-06-03 Shigeru Yokoi Cleaning liquid used in photolithography and a method for treating substrate therewith
CN101198416A (zh) * 2005-04-15 2008-06-11 高级技术材料公司 从微电子器件上清除离子注入光致抗蚀剂层的配方
CN101198683A (zh) * 2005-04-15 2008-06-11 高级技术材料公司 使用溶剂体系内的自组装单层除去高剂量离子注入光致抗蚀剂
US20090111726A1 (en) * 2007-10-31 2009-04-30 Shang X Cass Compounds for Photoresist Stripping

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US6551973B1 (en) * 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
US20040106532A1 (en) * 2002-10-10 2004-06-03 Shigeru Yokoi Cleaning liquid used in photolithography and a method for treating substrate therewith
CN101198416A (zh) * 2005-04-15 2008-06-11 高级技术材料公司 从微电子器件上清除离子注入光致抗蚀剂层的配方
CN101198683A (zh) * 2005-04-15 2008-06-11 高级技术材料公司 使用溶剂体系内的自组装单层除去高剂量离子注入光致抗蚀剂
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107312650A (zh) * 2016-04-26 2017-11-03 信越化学工业株式会社 清洁剂组合物和薄衬底的制备
CN107312650B (zh) * 2016-04-26 2021-09-10 信越化学工业株式会社 清洁剂组合物和薄衬底的制备

Also Published As

Publication number Publication date
WO2011012559A2 (en) 2011-02-03
CN102473638A (zh) 2012-05-23
SG10201404328QA (en) 2014-10-30
TW201128327A (en) 2011-08-16
JP2013500503A (ja) 2013-01-07
IL217708A0 (en) 2012-03-29
TWI594088B (zh) 2017-08-01
IL217708A (en) 2017-07-31
KR20120041777A (ko) 2012-05-02
SG177755A1 (en) 2012-03-29
EP2460177A2 (en) 2012-06-06
RU2012107135A (ru) 2013-09-10
MY185453A (en) 2021-05-19
KR101746879B1 (ko) 2017-06-14
WO2011012559A3 (en) 2011-03-24
JP6165442B2 (ja) 2017-07-19
US20120129747A1 (en) 2012-05-24
US9484218B2 (en) 2016-11-01
EP2460177B1 (en) 2016-03-23

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