KR101746879B1 - 고급 반도체 적용을 위한 이온 주입 후 스트리퍼 - Google Patents

고급 반도체 적용을 위한 이온 주입 후 스트리퍼 Download PDF

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Publication number
KR101746879B1
KR101746879B1 KR1020127005545A KR20127005545A KR101746879B1 KR 101746879 B1 KR101746879 B1 KR 101746879B1 KR 1020127005545 A KR1020127005545 A KR 1020127005545A KR 20127005545 A KR20127005545 A KR 20127005545A KR 101746879 B1 KR101746879 B1 KR 101746879B1
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South Korea
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composition
photoresist
group
solvent
alcohol
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Korean (ko)
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KR20120041777A (ko
Inventor
첸신 천
메이친 션
치아하오 찬
안드레아스 클리프
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바스프 에스이
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/68—Wet etching of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020127005545A 2009-07-30 2010-07-26 고급 반도체 적용을 위한 이온 주입 후 스트리퍼 Active KR101746879B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22976009P 2009-07-30 2009-07-30
US61/229,760 2009-07-30
PCT/EP2010/060762 WO2011012559A2 (en) 2009-07-30 2010-07-26 Post ion implant stripper for advanced semiconductor application

Publications (2)

Publication Number Publication Date
KR20120041777A KR20120041777A (ko) 2012-05-02
KR101746879B1 true KR101746879B1 (ko) 2017-06-14

Family

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KR1020127005545A Active KR101746879B1 (ko) 2009-07-30 2010-07-26 고급 반도체 적용을 위한 이온 주입 후 스트리퍼

Country Status (10)

Country Link
US (1) US9484218B2 (https=)
EP (1) EP2460177B1 (https=)
JP (1) JP6165442B2 (https=)
KR (1) KR101746879B1 (https=)
CN (1) CN102473638B (https=)
IL (1) IL217708A (https=)
MY (1) MY185453A (https=)
SG (2) SG10201404328QA (https=)
TW (1) TWI594088B (https=)
WO (1) WO2011012559A2 (https=)

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US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
CN104093790B (zh) * 2011-11-29 2016-10-12 涂料外国Ip有限公司 非水溶剂组合物及其作为隔离液体的用途
TWI588253B (zh) 2012-03-16 2017-06-21 巴地斯顏料化工廠 光阻剝除與清潔組合物及其製備方法與用途
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
JP6233779B2 (ja) * 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
JP2015118125A (ja) * 2013-11-18 2015-06-25 富士フイルム株式会社 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法
EP3089382B1 (en) 2013-12-25 2018-11-21 Huawei Marine Networks Co., Limited Optical branching unit for optical add drop multiplexing
US20150219996A1 (en) * 2014-02-06 2015-08-06 Dynaloy, Llc Composition for removing substances from substrates
WO2016084860A1 (ja) * 2014-11-27 2016-06-02 富士フイルム株式会社 除去液、これを用いた除去方法および半導体基板製品の製造方法
KR101850192B1 (ko) * 2015-12-02 2018-04-19 연세대학교 산학협력단 유기용매를 이용한 포토레지스트 제거방법
JP6536464B2 (ja) * 2016-04-26 2019-07-03 信越化学工業株式会社 洗浄剤組成物及び薄型基板の製造方法
BR112018013322B1 (pt) 2016-05-10 2022-12-06 Atotech Deutschland Gmbh Composição de separação não aquosa, seu uso e processo de separação de um revestimento orgânico de um substrato
JP7204760B2 (ja) * 2018-02-14 2023-01-16 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトレジストリムーバ組成物
TWI809992B (zh) * 2021-07-27 2023-07-21 元瀚材料股份有限公司 去光阻組成物及其使用方法
CN116285995A (zh) * 2021-12-20 2023-06-23 李长荣化学工业股份有限公司 用于移除硅的蚀刻组成物及使用其移除硅的方法
JP7752541B2 (ja) 2022-01-21 2025-10-10 関東化学株式会社 フォトレジスト剥離組成物
JP7290195B1 (ja) * 2022-10-19 2023-06-13 Jsr株式会社 半導体処理用組成物及び処理方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
JP2004117889A (ja) 2002-09-26 2004-04-15 Jsr Corp フォトレジスト用剥離液組成物
JP2006317714A (ja) * 2005-05-12 2006-11-24 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
US20090111726A1 (en) * 2007-10-31 2009-04-30 Shang X Cass Compounds for Photoresist Stripping

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US5612304A (en) * 1995-07-07 1997-03-18 Olin Microelectronic Chemicals, Inc. Redox reagent-containing post-etch residue cleaning composition
US5811358A (en) 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
JPH1184686A (ja) 1997-09-01 1999-03-26 Mitsubishi Gas Chem Co Inc レジスト剥離剤組成物
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
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US6368421B1 (en) * 1998-07-10 2002-04-09 Clariant Finance (Bvi) Limited Composition for stripping photoresist and organic materials from substrate surfaces
JP2001215736A (ja) 2000-02-04 2001-08-10 Jsr Corp フォトレジスト用剥離液組成物、剥離方法及び回路基板
JP3738996B2 (ja) * 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
WO2002095500A1 (en) * 2001-05-21 2002-11-28 Dongjin Semichem Co., Ltd. Resist remover composition
JP2002357908A (ja) 2001-05-31 2002-12-13 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
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US6551973B1 (en) * 2001-10-09 2003-04-22 General Chemical Corporation Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue
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CN101198683B (zh) * 2005-04-15 2011-09-14 高级技术材料公司 使用溶剂体系内的自组装单层除去高剂量离子注入光致抗蚀剂
JP2008537343A (ja) * 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物
EP1945748A4 (en) * 2005-10-13 2009-01-07 Advanced Tech Materials COMPATIBLE PHOTOLACK AND / OR SURFACE ANTIREFLEXION COATING COMPOSITION COMPRISED WITH METALS
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
WO2010127941A1 (en) * 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices

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US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
JP2004117889A (ja) 2002-09-26 2004-04-15 Jsr Corp フォトレジスト用剥離液組成物
JP2006317714A (ja) * 2005-05-12 2006-11-24 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
US20090111726A1 (en) * 2007-10-31 2009-04-30 Shang X Cass Compounds for Photoresist Stripping

Also Published As

Publication number Publication date
WO2011012559A2 (en) 2011-02-03
CN102473638A (zh) 2012-05-23
SG10201404328QA (en) 2014-10-30
TW201128327A (en) 2011-08-16
JP2013500503A (ja) 2013-01-07
IL217708A0 (en) 2012-03-29
TWI594088B (zh) 2017-08-01
IL217708A (en) 2017-07-31
KR20120041777A (ko) 2012-05-02
SG177755A1 (en) 2012-03-29
CN102473638B (zh) 2015-02-18
EP2460177A2 (en) 2012-06-06
RU2012107135A (ru) 2013-09-10
MY185453A (en) 2021-05-19
WO2011012559A3 (en) 2011-03-24
JP6165442B2 (ja) 2017-07-19
US20120129747A1 (en) 2012-05-24
US9484218B2 (en) 2016-11-01
EP2460177B1 (en) 2016-03-23

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