TWI574366B - 引線框及其製造方法以及半導體裝置及其製造方法 - Google Patents

引線框及其製造方法以及半導體裝置及其製造方法 Download PDF

Info

Publication number
TWI574366B
TWI574366B TW102103092A TW102103092A TWI574366B TW I574366 B TWI574366 B TW I574366B TW 102103092 A TW102103092 A TW 102103092A TW 102103092 A TW102103092 A TW 102103092A TW I574366 B TWI574366 B TW I574366B
Authority
TW
Taiwan
Prior art keywords
small
side surfaces
lead frame
pit
die holder
Prior art date
Application number
TW102103092A
Other languages
English (en)
Chinese (zh)
Other versions
TW201347123A (zh
Inventor
宮尾仁
Original Assignee
新光電氣工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新光電氣工業股份有限公司 filed Critical 新光電氣工業股份有限公司
Publication of TW201347123A publication Critical patent/TW201347123A/zh
Application granted granted Critical
Publication of TWI574366B publication Critical patent/TWI574366B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/411Chip-supporting parts, e.g. die pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/04Manufacture or treatment of leadframes
    • H10W70/048Mechanical treatments, e.g. punching, cutting, deforming or cold welding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW102103092A 2012-01-31 2013-01-28 引線框及其製造方法以及半導體裝置及其製造方法 TWI574366B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012018461A JP5833459B2 (ja) 2012-01-31 2012-01-31 リードフレーム及びその製造方法と半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW201347123A TW201347123A (zh) 2013-11-16
TWI574366B true TWI574366B (zh) 2017-03-11

Family

ID=48837510

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102103092A TWI574366B (zh) 2012-01-31 2013-01-28 引線框及其製造方法以及半導體裝置及其製造方法

Country Status (5)

Country Link
US (1) US8778739B2 (https=)
JP (1) JP5833459B2 (https=)
KR (1) KR101957257B1 (https=)
CN (1) CN103227115B (https=)
TW (1) TWI574366B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112014006397B4 (de) * 2014-02-24 2022-11-17 Mitsubishi Electric Corporation Leistungshalbleitermodul und Leistungseinheit
JP6408431B2 (ja) * 2015-06-11 2018-10-17 Shプレシジョン株式会社 リードフレーム、リードフレームの製造方法、および半導体装置
JP2017208486A (ja) * 2016-05-19 2017-11-24 株式会社ミスズ工業 表面に凹凸を有する金属部材、ヒートスプレッダ、半導体パッケージ及びそれらの製造方法
TWI623076B (zh) * 2016-11-02 2018-05-01 Fusheng Electronics Corporation 導線架製作方法
US10998255B2 (en) 2018-07-12 2021-05-04 Nxp Usa, Inc. Overmolded microelectronic packages containing knurled flanges and methods for the production thereof
TWI690045B (zh) * 2018-08-03 2020-04-01 欣興電子股份有限公司 構裝結構、其接合方法及用於其的線路板
WO2020053728A2 (en) * 2018-09-11 2020-03-19 Rjr Technologies, Inc. Air cavity package with improved connections between components
JP2021034705A (ja) * 2019-08-29 2021-03-01 Jx金属株式会社 金属板、金属樹脂複合体、半導体デバイス及び、金属板の製造方法
WO2024090029A1 (ja) * 2022-10-25 2024-05-02 富士電機株式会社 半導体モジュール、半導体装置、及び車両

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294409B1 (en) * 2000-01-27 2001-09-25 Siliconware Precisionware Industries Co., Ltd. Method of forming a constricted-mouth dimple structure on a leadframe die pad
US20050051876A1 (en) * 2003-09-08 2005-03-10 United Test And Assembly Test Center, Ltd. Integrated circuit package with leadframe enhancement and method of manufacturing the same
US20090256247A1 (en) * 2008-04-14 2009-10-15 Infineon Technologies Ag Semiconductor device and method including first and second carriers

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378558A (ja) * 1986-09-22 1988-04-08 Hitachi Ltd 電子装置
JPS6442847A (en) * 1987-08-10 1989-02-15 Toshiba Corp Lead frame
JP2552887Y2 (ja) * 1991-03-29 1997-10-29 サンケン電気株式会社 絶縁物被覆電子部品
JPH077122A (ja) * 1993-06-17 1995-01-10 Fujitsu Ltd Icパッケージ
JPH07161896A (ja) 1993-12-02 1995-06-23 Hitachi Cable Ltd リードフレームとその製造方法
JP3339173B2 (ja) 1994-04-01 2002-10-28 松下電器産業株式会社 リードフレーム及びその製造方法及びそれを用いた半導体装置
JPH0864739A (ja) * 1994-08-24 1996-03-08 Hitachi Cable Ltd ディンプル加工を施したリードフレームの製造方法及びそのディンプル加工金型
JPH0864749A (ja) * 1994-08-25 1996-03-08 Hitachi Cable Ltd リードフレーム
US7091602B2 (en) 2002-12-13 2006-08-15 Freescale Semiconductor, Inc. Miniature moldlocks for heatsink or flag for an overmolded plastic package
US7476602B2 (en) * 2005-01-31 2009-01-13 Texas Instruments Incorporated N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films
JP2009260282A (ja) 2008-03-18 2009-11-05 Panasonic Corp パッケージ用リードフレーム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294409B1 (en) * 2000-01-27 2001-09-25 Siliconware Precisionware Industries Co., Ltd. Method of forming a constricted-mouth dimple structure on a leadframe die pad
US20050051876A1 (en) * 2003-09-08 2005-03-10 United Test And Assembly Test Center, Ltd. Integrated circuit package with leadframe enhancement and method of manufacturing the same
US20090256247A1 (en) * 2008-04-14 2009-10-15 Infineon Technologies Ag Semiconductor device and method including first and second carriers

Also Published As

Publication number Publication date
JP2013157536A (ja) 2013-08-15
US8778739B2 (en) 2014-07-15
TW201347123A (zh) 2013-11-16
KR101957257B1 (ko) 2019-03-13
KR20130088773A (ko) 2013-08-08
JP5833459B2 (ja) 2015-12-16
US20130193567A1 (en) 2013-08-01
CN103227115A (zh) 2013-07-31
CN103227115B (zh) 2017-04-12

Similar Documents

Publication Publication Date Title
TWI574366B (zh) 引線框及其製造方法以及半導體裝置及其製造方法
US11699667B2 (en) Leadframe with pad anchoring members and method of forming the same
CN108281407B (zh) 具有粘合剂溢流凹部的经修改的引线框架设计
TWI726063B (zh) 具有夾具對準刻痕的半導體封裝和相關方法
JP2013157536A5 (https=)
TWI249998B (en) Slider for slide fastener
JP6080305B2 (ja) 半導体装置の製造方法、半導体装置及びリードフレーム
US20030160308A1 (en) Semiconductor device
JP2009260282A (ja) パッケージ用リードフレーム
WO2019210651A1 (zh) 一种超薄微型桥堆整流器
JP2016146458A (ja) 半導体装置
JP2014116499A (ja) リードフレーム及びその製造方法
JP2014123614A (ja) リードフレーム及びその製造方法
TW201707166A (zh) 導線架構造體、導線架構造體之製造方法、及半導體裝置
JPWO2018211683A1 (ja) 電子モジュール、接続体の製造方法及び電子モジュールの製造方法
KR100473338B1 (ko) 반도체패키지용 리드프레임 및 그 봉지 방법
JP2012146704A (ja) 半導体装置、リードフレーム、及び半導体装置の製造方法
CN202394953U (zh) 半导体封装构造的导线架
JP6705654B2 (ja) リードフレーム及びその製造方法
JP2024140058A5 (https=)
JP5171803B2 (ja) 半導体装置
JP2009272475A (ja) 半導体装置
JP2007157991A (ja) リード成形金型、リードフレームおよび半導体装置