TW201707166A - 導線架構造體、導線架構造體之製造方法、及半導體裝置 - Google Patents
導線架構造體、導線架構造體之製造方法、及半導體裝置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229920005989 resin Polymers 0.000 claims description 28
- 239000011347 resin Substances 0.000 claims description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
本發明之實施形態提供一種能夠抑制導線架構造體於連接時變形之導線架構造體、導線架構造體之製造方法、及半導體裝置。
實施形態之導線架構造體具有第1構件及第2構件,其中一者為導線架,另一者為散熱器。第1構件具有第1面、相對於第1面為相反側之第2面、及自第1面貫通至第2面之第1貫通孔。第2構件具有與第2面相接之第3面、及相對於第3面為相反側之第4面,且具備第1部分、第2部分及第3部分。第2構件之第1部分位於第2面側,第2部分位於第1貫通孔內,第3部分位於第1面側。第2部分之外側面與第1貫通孔之內表面相接。第3部分之外形大於第1貫通孔,第1部分之外形大於上述第3部分之外形。
Description
本申請案享有以日本專利申請案2015-52663號(申請日:2015年3月16日)為基礎申請案之優先權。本申請案藉由參照該基礎申請案而包含基礎申請案之全部內容。
實施形態之發明係關於一種導線架構造體、導線架構造體之製造方法、及半導體裝置。
半導體封裝等半導體裝置較佳為具有較高之散熱性,以實現高速化、小型化等。作為提高半導體裝置之散熱性之方法之一,已知有使用例如使散熱器連接於搭載半導體晶片之導線架之導線架構造體。
上述導線架構造體之製造步驟係例如於導線架之一部分形成貫通孔,並藉由半沖切加工等於散熱器之一部分形成突起。繼而,將散熱器之突起插入至導線架之貫通孔中,並進行擠鍛加工。藉由以上步驟將導線架與散熱器連接。
然而,上述導線架構造體之製造方法中有於將導線架與散熱器連接時易產生翹曲或變形等缺點。若導線架構造體產生翹曲或變形,則有如下情形:內導線之高度產生不均,對內導線進行打線接合時於接合線與內導線之間產生未連接,或產生連接強度較低之部分。如此,要求於導線架構造體中抑制連接時之變形。
本發明之實施形態提供一種能夠抑制連接時之導線架構造體之變形之導線架構造體、導線架構造體之製造方法、及半導體裝置。
實施形態之導線架構造體具有第1構件及第2構件,其中一者為導線架,另一者為散熱器。第1構件具有第1面、相對於第1面為相反側之第2面、及自第1面貫通至第2面之第1貫通孔。第2構件具有與第2面相接之第3面、及相對於第3面為相反側之第4面,且具備第1部分、第2部分及第3部分。第2構件之第1部分位於第2面側,第2部分位於第1貫通孔內,第3部分位於第1面側。第2部分之外側面與第1貫通孔之內表面相接。第3部分之外形大於第1貫通孔,第1部分之外形大於上述第3部分之外形。
1‧‧‧導線架
1a‧‧‧導線部
1b‧‧‧邊框部
1c‧‧‧連接部
2‧‧‧散熱器
3‧‧‧半導體晶片
4‧‧‧接合線
5‧‧‧樹脂層
10‧‧‧導線架構造體
11‧‧‧貫通孔
21‧‧‧貫通孔
22‧‧‧突出部
100‧‧‧半導體裝置
圖1係表示導線架構造體之構造例之俯視模式圖。
圖2係表示連接部之構造例之剖視模式圖。
圖3係表示連接部之另一構造例之剖視模式圖。
圖4係用以說明導線架構造體之製造方法例之模式圖。
圖5係用以說明導線架構造體之製造方法例之模式圖。
圖6係用以說明導線架構造體之製造方法例之模式圖。
圖7係表示半導體裝置之構造例之俯視模式圖。
圖8係表示半導體裝置之構造例之剖視模式圖。
圖9係表示半導體裝置之構造例之剖視模式圖。
以下,參照圖式對實施形態進行說明。再者,圖式係模式圖,有例如厚度與平面尺寸之關係、各層之厚度之比率等與實物不同之情形。又,於各實施形態中,對實質上相同之構成要素標註相同之符號並省略說明。
(第1實施形態)
於本實施形態中,對導線架構造體之構造例進行說明。圖1係表示導線架構造體10之俯視構造例之圖。圖1所示之導線架構造體10具備導線架1及散熱器2。
導線架1係供半導體晶片等元件搭載之金屬板。作為導線架1,例如可使用利用銅、銅合金、或42合金等鐵及鎳之合金等之導線架。
導線架1具有第1面(導線架1之上表面)及與第1面為相反側之第2面(導線架1之下表面)。又,導線架1具備導線部1a、邊框部1b及連接部1c。第1面及第2面分別被劃分為導線部1a、邊框部1b及連接部1c之至少3個區域。
導線部1a係成為半導體裝置之導線之區域。導線部1a設置於散熱器2之周邊部。圖1中,導線部1a自邊框部1b朝向散熱器2延伸,且與散熱器2相隔。圖1中,僅於散熱器2之左右設置有導線部1a。並不限定於此,例如亦可於圖1中之散熱器2之上下設置導線部1a。
邊框部1b係支持導線部1a與連接部1c之區域。於圖1中,邊框部1b以包圍散熱器2之方式設置。
連接部1c係導線架1與散熱器2之連接部。於圖1中,連接部1c自邊框部1b朝向散熱器2延伸。又,於圖1中,連接部1c設置於散熱器2之上下,但並不限定於此。例如,亦可於散熱器2之左右設置連接部1c。
散熱器2具有與第2面相接之第3面(散熱器2之上表面)及與第3面為相反側之第4面(散熱器2之下表面)。散熱器2以至少與連接部1c重疊之方式積層於導線架1。
散熱器2之熱導率高於導線架1之熱導率。因此,散熱器2具有作為將由半導體晶片等產生之熱釋出之散熱板之功能。散熱器2例如包含銅等金屬。銅因熱導電率較高且易於加工而較佳。散熱器2較佳為具有較導線架1厚之區域。藉此,能夠提高散熱器2之散熱性。
進而,參照圖2對連接部1c之構造例進行說明。圖2係表示連接部
之構造例之剖視模式圖。
導線架構造體10具有自第1面貫通至第2面之貫通孔11。貫通孔11具有第1直徑。
散熱器2具有自第3面貫通至第4面且與貫通孔11重疊之貫通孔21。於圖2中,貫通孔21具有小於第1直徑之第2直徑。此時,貫通孔21之周緣與貫通孔11重疊。
散熱器2之一部分自第3面中之貫通孔21之周緣經由貫通孔11超出第1面而突出,且與導線架1之第1面連接。於圖2中,散熱器2之一部分沿著貫通孔21之側壁延伸,且與貫通孔11之周緣連接。
即,散熱器2具備位於導線架1之第2面側之第1部分、位於貫通孔11內之第2部分及位於導線架1之第1面側之第3部分。並且,第2部分之外側面與貫通孔11之內表面相接。又,第3部分之外形大於貫通孔11,第1部分之外形大於第3部分之外形。
於連接部突出之上述散熱器2之一部分具有包含例如圓筒形狀等之所謂之孔眼(eyelet:小孔或grommet:環眼)形狀。如此,因於連接部突出之散熱器2之一部分具有中空構造,故突出部之體積較小,能夠減低導線架構造體10中之殘留應力。
圖3係表示連接部之另一構造例之剖視模式圖。如圖3所示,亦可為導線架1之一部分自第2面中之貫通孔11之周緣經由貫通孔21超出第4面而突出,且與散熱器2之第4面連接。於圖3中,貫通孔21之第2直徑大於貫通孔11之第1直徑。貫通孔11之周緣與貫通孔21重疊。導線架1之一部分沿著貫通孔11之側壁延伸至散熱器2之第4面,且與貫通孔21之周緣連接。
即,導線架1具備位於散熱器2之第3面側之第1部分、位於貫通孔11內之第2部分及位於散熱器2之第4面側之第3部分。並且,第2部分之外側面與貫通孔21之內表面相接。又,第3部分之外形大於貫通
孔21,第1部分之外形大於第3部分之外形。
接下來,參照圖4至圖6對導線架構造體之製造方法例進行說明。圖4至圖6係用以說明導線架構造體之製造方法例之模式圖。再者,於圖4至圖6中,方便起見僅模式性地圖示有導線架1及散熱器2之一部分之區域。
如圖4所示,準備導線架1及散熱器2。繼而,以貫通孔21與貫通孔11重疊之方式將導線架1與散熱器2重合。於第2直徑小於第1直徑之情形時,較佳為以貫通孔21之周緣與貫通孔11重疊之方式將導線架1與散熱器2重合。
繼而,如圖5所示,例如藉由沖緣(burring)加工,使第3面之貫通孔21之周緣之散熱器2之一部分經由貫通孔11而突出直到自第1面伸出,藉此形成突出部22。所謂沖緣加工係指藉由形成開口並將開口之周緣立起而形成突起等之加工方法。
繼而,如圖6所示,例如藉由捲曲(curling)加工,使突出之散熱器2之一部分(突出部22)與第1面連接。所謂捲曲加工係指將突起等捲邊彎曲之加工方法。於圖6中,將突出之散熱器2之一部分(突出部22)呈放射狀擴展,使其與第1面中之貫通孔11之周緣連接。藉由以上步驟,能夠製造導線架構造體10。
再者,於圖3所示之構造之情形時,以貫通孔11之周緣與貫通孔21重疊之方式將導線架1與散熱器2重合。繼而,使第2面之貫通孔11之周緣之導線架1之一部分經由貫通孔21而突出直到自第4面伸出。繼而,使突出之導線架1之一部分與第4面連接。藉由以上步驟,能夠製造導線架構造體10。
藉由進行以上步驟而製造本實施形態之導線架構造體,與例如使用擠鍛加工將導線架與散熱器連接之情形相比,能夠抑制連接時之導線架構造體之變形。
於使用擠鍛加工將導線架與散熱器連接之方法中,首先準備具有貫通孔之導線架、及具有使用半沖切加工等而設置之突起之散熱器。繼而,以將突起插入至貫通孔中之方式將導線架與散熱器重合。繼而,藉由使用擠鍛加工衝壓突起,使導線架與散熱器連接而形成連接部。
於使用上述擠鍛加工之導線架構造體之製造方法中,突起之與導線架之上表面連接之部分之體積會因突起之高度或位置精度而變化。因此,導線架構造體易產生翹曲或變形。尤其是導線架之熱膨脹率與散熱器不同,故易變形。又,由半沖切加工而形成之突起之體積較大,易於導線架構造體中產生殘留應力。
相對於此,於本實施形態之導線架構造體中,藉由使貫通孔之周緣突出並連接,且突出部成為中空構造,故能夠減小體積。因此,施加於導線架構造體之負荷減低。從而能夠抑制連接時之變形,提高導線架構造體之品質。
(第2實施形態)
於本實施形態中,對使用有第1實施形態之導線架構造體之半導體裝置進行說明。圖7至圖9係表示使用導線架構造體之半導體裝置之構造例之圖。圖7係俯視模式圖,圖8係圖7中之線段X1-Y1之剖視模式圖,圖9係圖7中之線段X2-Y2之剖視模式圖。
圖7至圖9所示之半導體裝置100具備導線架1、散熱器2、半導體晶片3、接合線4及樹脂層5。再者,於圖7中,為方便起見省略了樹脂層5。
導線架1具備圖1所示之導線架1中之導線部1a及連接部1c。圖7中,藉由將導線架1之導線部1a與邊框部1b之間、邊框部1b與連接部1c之間切斷而能夠形成圖7所示之導線架1。關於其他之說明,因與第1實施形態之導線架構造體10相同,因此可適當引用第1實施形態之說明。
作為散熱器2,可應用第1實施形態中之散熱器2。因此,關於散熱器2之說明,可適當引用第1實施形態之說明。
半導體晶片3搭載於散熱器2之第3面。半導體晶片3之上表面具有連接墊。作為半導體晶片3,亦可將半導體晶片3例如積層複數個。此時,亦可於半導體晶片3中設置TSV(Through Silicon Via,矽穿孔)等貫通電極。又,亦可設置凸塊等外部連接端子作為半導體晶片3。
接合線4係將導線架1與半導體晶片3之間電連接。於圖7中,接合線4之一端與導線部1a連接,另一端與半導體晶片3之連接墊連接。
樹脂層5以將半導體晶片3與包含第3面之散熱器2之一部分密封之方式設置於第1面、第2面及第4面。例如,亦可藉由以密封半導體晶片3之方式形成第1樹脂層,以密封散熱器2之一部分之方式形成第2樹脂層,而形成樹脂層5。此時,以第4面之至少一部分自樹脂層5露出之方式形成第2樹脂層。於圖9中,樹脂層5之一部分被填充於貫通孔11及貫通孔21。藉由於貫通孔11及貫通孔21填充樹脂層5,而能夠抑制樹脂層5自導線架構造體10剝離。再者,此處之「填充」包含填充至貫通孔11及貫通孔21之一部分即貫通孔11及貫通孔21之深度方向之途中之情形。又,包含如下情形:當存在複數個貫通孔11及貫通孔21時,於一部分貫通孔11及貫通孔21之至少一部分填充樹脂層5。只要將樹脂層5填充至因投錨效應而可抑制樹脂層5剝離之程度之深度便足夠,無須於貫通孔11及貫通孔21之深度方向上完全填充樹脂層5,且無須於所有貫通孔11及貫通孔21中填充樹脂層5。
樹脂層5支持導線部1a。此時,導線部1a之一部分自樹脂層5突出。將導線部1a之被樹脂層5支持之部分稱為內導線,將導線部1a之自樹脂層5突出之部分稱為外導線。接合線4之一端與例如內導線之一部分連接。
樹脂層5至少包含SiO2等無機填充材料。例如,可使用無機填充
材料與環氧樹脂等有機樹脂之混合物而構成樹脂層5。無機填充材料之含量較佳為整體之80%以上且95%以下。此種樹脂層5因與導線架1之密接性較高而較佳。
如上所述,藉由於半導體裝置中使用導線架構造體,而能夠抑制半導體晶片之變形或翹曲。又,能夠提供因散熱器而具有較高之散熱性之半導體裝置。
再者,各實施形態係作為示例而提出者,並非意圖限定發明之範圍。該等新穎之實施形態能以其他多種形態加以實施,且可於不脫離發明主旨之範圍內進行各種省略、替換、變更。該等實施形態或其變化包含於發明之範圍或主旨內,並且包含於申請專利範圍所記載之發明及其均等之範圍內。
1‧‧‧導線架
1a‧‧‧導線部
1b‧‧‧邊框部
1c‧‧‧連接部
2‧‧‧散熱器
10‧‧‧導線架構造體
Claims (6)
- 一種導線架構造體,其具備:第1構件,其具有第1面、相對於上述第1面為相反側之第2面、及自上述第1面貫通至上述第2面之第1貫通孔;及第2構件,其具有與上述第2面相接之第3面、及相對於上述第3面為相反側之第4面,且具備第1部分、第2部分及第3部分;上述第2構件之上述第1部分位於上述第2面側,上述第2部分位於上述第1貫通孔內,上述第3部分位於上述第1面側,上述第2部分之外側面與上述第1貫通孔之內表面相接,上述第3部分之外形大於上述第1貫通孔,上述第1部分之外形大於上述第3部分之外形,上述第1構件與上述第2構件之一者為導線架,另一者為散熱器。
- 如請求項1之導線架構造體,其中於上述第2構件之上述第2部分具有第2貫通孔。
- 如請求項1或2之導線架構造體,其中上述散熱器具有較上述導線架更厚之區域。
- 如請求項1或2之導線架構造體,其中上述散熱器包含銅。
- 一種導線架構造體之製造方法,其於具有第1面、相對於上述第1面為相反側之第2面、及自上述第1面貫通至上述第2面之第1貫通孔之導線架上,將具有第3面、相對於上述第3面為相反側之第4面、及自上述第3面貫通至上述第4面之第2貫通孔之散熱器,以上述第3面與上述第2面相接且上述第2貫通孔與上述第1貫通孔重疊之方式重合,且使上述第3面中之上述第2貫通孔之周緣之上述散熱器之一部 分經由上述第1貫通孔而突出直到自上述第1面伸出,且將上述導線架與上述散熱器連接,或者使上述第2面中之上述第1貫通孔之周緣之上述導線架之一部分經由上述第2貫通孔而突出直到自上述第4面伸出,且將上述導線架與上述散熱器連接。
- 一種半導體裝置,其具備:如請求項1至4中任一項之導線架構造體;半導體晶片,其被搭載於上述第3面;及樹脂層,其以密封上述半導體晶片與包含上述第3面之上述散熱器之一部分之方式設置;且至少上述第4面之一部分自上述樹脂層露出,將上述樹脂層之一部分填充於上述第1貫通孔之至少一部分。
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