TWI563790B - Bridge circuits and method of operating the same - Google Patents

Bridge circuits and method of operating the same

Info

Publication number
TWI563790B
TWI563790B TW103136677A TW103136677A TWI563790B TW I563790 B TWI563790 B TW I563790B TW 103136677 A TW103136677 A TW 103136677A TW 103136677 A TW103136677 A TW 103136677A TW I563790 B TWI563790 B TW I563790B
Authority
TW
Taiwan
Prior art keywords
operating
same
bridge circuits
bridge
circuits
Prior art date
Application number
TW103136677A
Other languages
English (en)
Other versions
TW201507339A (zh
Inventor
James Honea
Yifeng Wu
Original Assignee
Transphorm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40938392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI563790(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Transphorm Inc filed Critical Transphorm Inc
Publication of TW201507339A publication Critical patent/TW201507339A/zh
Application granted granted Critical
Publication of TWI563790B publication Critical patent/TWI563790B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
TW103136677A 2008-02-12 2009-02-12 Bridge circuits and method of operating the same TWI563790B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2813308P 2008-02-12 2008-02-12
US12/368,200 US7965126B2 (en) 2008-02-12 2009-02-09 Bridge circuits and their components

Publications (2)

Publication Number Publication Date
TW201507339A TW201507339A (zh) 2015-02-16
TWI563790B true TWI563790B (en) 2016-12-21

Family

ID=40938392

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103136677A TWI563790B (en) 2008-02-12 2009-02-12 Bridge circuits and method of operating the same
TW98104543A TWI467912B (zh) 2008-02-12 2009-02-12 橋式電路及其操作方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW98104543A TWI467912B (zh) 2008-02-12 2009-02-12 橋式電路及其操作方法

Country Status (7)

Country Link
US (4) US7965126B2 (zh)
EP (1) EP2243213A4 (zh)
JP (4) JP5697996B2 (zh)
CN (2) CN104811170B (zh)
BR (1) BRPI0908363B1 (zh)
TW (2) TWI563790B (zh)
WO (1) WO2009102732A2 (zh)

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