HK1141138A1 - 半導體元件及製造方法 - Google Patents

半導體元件及製造方法

Info

Publication number
HK1141138A1
HK1141138A1 HK10107010.9A HK10107010A HK1141138A1 HK 1141138 A1 HK1141138 A1 HK 1141138A1 HK 10107010 A HK10107010 A HK 10107010A HK 1141138 A1 HK1141138 A1 HK 1141138A1
Authority
HK
Hong Kong
Prior art keywords
manufacture
semiconductor component
semiconductor
component
Prior art date
Application number
HK10107010.9A
Other languages
English (en)
Inventor
‧庫杜斯
Original Assignee
半導體元件工業有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體元件工業有限責任公司 filed Critical 半導體元件工業有限責任公司
Publication of HK1141138A1 publication Critical patent/HK1141138A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
HK10107010.9A 2008-09-08 2010-07-20 半導體元件及製造方法 HK1141138A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/206,570 US9000550B2 (en) 2008-09-08 2008-09-08 Semiconductor component and method of manufacture

Publications (1)

Publication Number Publication Date
HK1141138A1 true HK1141138A1 (zh) 2010-10-29

Family

ID=41798492

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10107010.9A HK1141138A1 (zh) 2008-09-08 2010-07-20 半導體元件及製造方法

Country Status (4)

Country Link
US (2) US9000550B2 (zh)
CN (1) CN101673741B (zh)
HK (1) HK1141138A1 (zh)
TW (1) TWI500168B (zh)

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JP5301123B2 (ja) 2007-07-25 2013-09-25 スパンション エルエルシー 半導体装置及びその製造方法
US7998829B2 (en) * 2007-12-11 2011-08-16 Hvvi Semiconductors, Inc. Semiconductor structure and method of manufacture
US8313995B2 (en) * 2011-01-13 2012-11-20 Infineon Technologies Austria Ag Method for manufacturing a semiconductor device
US8901647B2 (en) * 2011-12-08 2014-12-02 Infineon Technologies Ag Semiconductor device including first and second semiconductor elements
US8530964B2 (en) 2011-12-08 2013-09-10 Infineon Technologies Ag Semiconductor device including first and second semiconductor elements
CN103390554A (zh) * 2012-05-11 2013-11-13 上海华虹Nec电子有限公司 改善肖特基二极管击穿电压均一性的方法
CN103594494A (zh) * 2012-08-16 2014-02-19 朱江 一种电荷补偿肖特基半导体装置及其制备方法
JP2015032627A (ja) * 2013-07-31 2015-02-16 株式会社東芝 半導体装置
US9191637B2 (en) * 2013-09-10 2015-11-17 Kabushiki Kaisha Toshiba Solid-state imaging apparatus
US9245754B2 (en) * 2014-05-28 2016-01-26 Mark E. Granahan Simplified charge balance in a semiconductor device
JP6485382B2 (ja) * 2016-02-23 2019-03-20 株式会社デンソー 化合物半導体装置の製造方法および化合物半導体装置
US9899441B1 (en) * 2016-10-28 2018-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Deep trench isolation (DTI) structure with a tri-layer passivation layer
US10608122B2 (en) * 2018-03-13 2020-03-31 Semicondutor Components Industries, Llc Schottky device and method of manufacture
KR20200102357A (ko) * 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
WO2021016764A1 (zh) * 2019-07-26 2021-02-04 深圳市汇顶科技股份有限公司 电容装置及其制备方法
KR20220041358A (ko) * 2020-09-25 2022-04-01 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
US11973148B2 (en) * 2021-01-15 2024-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Surface damage control in diodes
CN116344628B (zh) * 2023-05-26 2023-08-08 湖南楚微半导体科技有限公司 一种屏蔽栅结构的肖特基二极管及其制备方法

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Also Published As

Publication number Publication date
US9000550B2 (en) 2015-04-07
TWI500168B (zh) 2015-09-11
CN101673741A (zh) 2010-03-17
CN101673741B (zh) 2016-03-23
US20100059849A1 (en) 2010-03-11
US8889528B2 (en) 2014-11-18
TW201011920A (en) 2010-03-16
US20120208353A1 (en) 2012-08-16

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210713