TWI518197B - 熱軋銅板 - Google Patents
熱軋銅板 Download PDFInfo
- Publication number
- TWI518197B TWI518197B TW103112851A TW103112851A TWI518197B TW I518197 B TWI518197 B TW I518197B TW 103112851 A TW103112851 A TW 103112851A TW 103112851 A TW103112851 A TW 103112851A TW I518197 B TWI518197 B TW I518197B
- Authority
- TW
- Taiwan
- Prior art keywords
- hot
- less
- grain boundary
- mass
- rolled copper
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 119
- 229910052802 copper Inorganic materials 0.000 title claims description 119
- 239000010949 copper Substances 0.000 title claims description 119
- 239000013078 crystal Substances 0.000 claims description 80
- 238000005096 rolling process Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 25
- 238000005097 cold rolling Methods 0.000 claims description 22
- 238000001887 electron backscatter diffraction Methods 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 14
- 238000005477 sputtering target Methods 0.000 claims description 9
- 238000012937 correction Methods 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 description 38
- 238000005098 hot rolling Methods 0.000 description 31
- 230000002159 abnormal effect Effects 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 15
- 230000007547 defect Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000005482 strain hardening Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000005242 forging Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000010273 cold forging Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000007405 data analysis Methods 0.000 description 2
- 238000013480 data collection Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Metal Rolling (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013080844A JP5752736B2 (ja) | 2013-04-08 | 2013-04-08 | スパッタリング用ターゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201510254A TW201510254A (zh) | 2015-03-16 |
| TWI518197B true TWI518197B (zh) | 2016-01-21 |
Family
ID=51689539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103112851A TWI518197B (zh) | 2013-04-08 | 2014-04-08 | 熱軋銅板 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9938606B2 (enExample) |
| JP (1) | JP5752736B2 (enExample) |
| KR (1) | KR102214290B1 (enExample) |
| CN (1) | CN105189792B (enExample) |
| TW (1) | TWI518197B (enExample) |
| WO (1) | WO2014168132A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6056876B2 (ja) | 2015-01-07 | 2017-01-11 | 三菱マテリアル株式会社 | 超伝導安定化材 |
| JP6056877B2 (ja) | 2015-01-07 | 2017-01-11 | 三菱マテリアル株式会社 | 超伝導線、及び、超伝導コイル |
| EP3342898B1 (en) | 2015-08-24 | 2023-03-22 | Mitsubishi Materials Corporation | High purity copper sputtering target material |
| JP6668899B2 (ja) * | 2016-04-06 | 2020-03-18 | 三菱マテリアル株式会社 | 超伝導安定化材、超伝導線及び超伝導コイル |
| JP6299802B2 (ja) | 2016-04-06 | 2018-03-28 | 三菱マテリアル株式会社 | 超伝導安定化材、超伝導線及び超伝導コイル |
| JP6299803B2 (ja) | 2016-04-06 | 2018-03-28 | 三菱マテリアル株式会社 | 超伝導線、及び、超伝導コイル |
| TWI663274B (zh) | 2017-03-30 | 2019-06-21 | 日商Ｊｘ金屬股份有限公司 | Sputtering target and manufacturing method thereof |
| JP7121883B2 (ja) * | 2018-04-09 | 2022-08-19 | 三菱マテリアル株式会社 | スパッタリングターゲット材 |
| US10670393B1 (en) | 2018-11-30 | 2020-06-02 | Applied Materials, Inc. | Construction of three-dimensional profiles of high aspect ratio structures using top down imaging |
| US12385110B2 (en) | 2018-12-13 | 2025-08-12 | Mitsubishi Materials Corporation | Pure copper plate |
| JP7131376B2 (ja) * | 2018-12-27 | 2022-09-06 | 三菱マテリアル株式会社 | スパッタリングターゲット用銅素材 |
| US11427888B2 (en) | 2019-01-07 | 2022-08-30 | Mitsubishi Materials Corporation | Sputtering target material |
| TWI727586B (zh) * | 2019-02-28 | 2021-05-11 | 日商Ｊｘ金屬股份有限公司 | 銅電極材料 |
| WO2021060023A1 (ja) * | 2019-09-27 | 2021-04-01 | 三菱マテリアル株式会社 | 純銅板 |
| CN110578126B (zh) * | 2019-10-18 | 2021-12-28 | 洛阳高新四丰电子材料有限公司 | 一种多规格高纯铜靶材的制备方法 |
| EP4116451A4 (en) * | 2020-03-06 | 2024-03-27 | Mitsubishi Materials Corporation | PURE COPPER PLATE |
| WO2024024898A1 (ja) * | 2022-07-29 | 2024-02-01 | 三菱マテリアル株式会社 | 純銅材、絶縁基板、電子デバイス |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2614885B2 (ja) * | 1988-02-10 | 1997-05-28 | 株式会社フジクラ | 真空蒸着用銅基材 |
| JP3403918B2 (ja) | 1997-06-02 | 2003-05-06 | 株式会社ジャパンエナジー | 高純度銅スパッタリングタ−ゲットおよび薄膜 |
| JP3975414B2 (ja) | 1997-11-28 | 2007-09-12 | 日立金属株式会社 | スパッタリング用銅ターゲットおよびその製造方法 |
| CN1181224C (zh) | 2001-06-01 | 2004-12-22 | 中国科学院金属研究所 | 一种高强度高导电性纳米晶体铜材料的制备方法 |
| CA2674403C (en) * | 2007-12-18 | 2012-06-05 | Integran Technologies Inc. | Method for preparing polycrystalline structures having improved mechanical and physical properties |
| JP4620185B2 (ja) * | 2008-09-30 | 2011-01-26 | Ｊｘ日鉱日石金属株式会社 | 高純度銅及び電解による高純度銅の製造方法 |
| WO2010038642A1 (ja) * | 2008-09-30 | 2010-04-08 | 日鉱金属株式会社 | 高純度銅又は高純度銅合金スパッタリングターゲット、同スパッタリングターゲットの製造方法及び高純度銅又は高純度銅合金スパッタ膜 |
| JP4790782B2 (ja) | 2008-11-04 | 2011-10-12 | Ｊｘ日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
| JP4869398B2 (ja) * | 2009-12-22 | 2012-02-08 | 三菱伸銅株式会社 | 純銅板の製造方法及び純銅板 |
| KR20120106745A (ko) | 2009-12-22 | 2012-09-26 | 미쓰비시 마테리알 가부시키가이샤 | 순구리판의 제조 방법 및 순구리판 |
| JP4792116B2 (ja) | 2010-02-09 | 2011-10-12 | 三菱伸銅株式会社 | 純銅板の製造方法及び純銅板 |
| JP4869415B2 (ja) * | 2010-02-09 | 2012-02-08 | 三菱伸銅株式会社 | 純銅板の製造方法及び純銅板 |
| JP5464352B2 (ja) * | 2010-03-05 | 2014-04-09 | 三菱マテリアル株式会社 | 均一かつ微細結晶組織を有する高純度銅加工材の製造方法 |
| JP5376168B2 (ja) * | 2010-03-30 | 2013-12-25 | 三菱マテリアル株式会社 | 電気銅めっき用高純度銅アノード、その製造方法および電気銅めっき方法 |
| JP5685869B2 (ja) | 2010-09-14 | 2015-03-18 | 三菱マテリアル株式会社 | 太陽電池パネルのインターコネクター用銅圧延箔及びその製造方法 |
| JP6027823B2 (ja) * | 2012-09-07 | 2016-11-16 | 三菱マテリアル株式会社 | 熱延銅板、及び、熱延銅板の形状調整方法 |
-
2013
- 2013-04-08 JP JP2013080844A patent/JP5752736B2/ja active Active
-
2014
- 2014-04-08 TW TW103112851A patent/TWI518197B/zh active
- 2014-04-08 WO PCT/JP2014/060151 patent/WO2014168132A1/ja not_active Ceased
- 2014-04-08 CN CN201480020010.XA patent/CN105189792B/zh active Active
- 2014-04-08 US US14/782,177 patent/US9938606B2/en active Active
- 2014-04-08 KR KR1020157026462A patent/KR102214290B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201510254A (zh) | 2015-03-16 |
| US20160047017A1 (en) | 2016-02-18 |
| KR20150140658A (ko) | 2015-12-16 |
| KR102214290B1 (ko) | 2021-02-08 |
| JP2014201814A (ja) | 2014-10-27 |
| JP5752736B2 (ja) | 2015-07-22 |
| WO2014168132A1 (ja) | 2014-10-16 |
| CN105189792B (zh) | 2017-06-09 |
| CN105189792A (zh) | 2015-12-23 |
| US9938606B2 (en) | 2018-04-10 |
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