TWI512873B - Liquid treatment method and liquid treatment device - Google Patents

Liquid treatment method and liquid treatment device Download PDF

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Publication number
TWI512873B
TWI512873B TW101112776A TW101112776A TWI512873B TW I512873 B TWI512873 B TW I512873B TW 101112776 A TW101112776 A TW 101112776A TW 101112776 A TW101112776 A TW 101112776A TW I512873 B TWI512873 B TW I512873B
Authority
TW
Taiwan
Prior art keywords
substrate
liquid
wafer
dampening
pure water
Prior art date
Application number
TW101112776A
Other languages
English (en)
Chinese (zh)
Other versions
TW201308470A (zh
Inventor
Jun Nonaka
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201308470A publication Critical patent/TW201308470A/zh
Application granted granted Critical
Publication of TWI512873B publication Critical patent/TWI512873B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW101112776A 2011-04-12 2012-04-11 Liquid treatment method and liquid treatment device TWI512873B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011088370A JP5789400B2 (ja) 2011-04-12 2011-04-12 液処理方法及び液処理装置

Publications (2)

Publication Number Publication Date
TW201308470A TW201308470A (zh) 2013-02-16
TWI512873B true TWI512873B (zh) 2015-12-11

Family

ID=47005473

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101112776A TWI512873B (zh) 2011-04-12 2012-04-11 Liquid treatment method and liquid treatment device

Country Status (4)

Country Link
US (1) US9412627B2 (ja)
JP (1) JP5789400B2 (ja)
KR (1) KR101760306B1 (ja)
TW (1) TWI512873B (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6093569B2 (ja) * 2012-12-28 2017-03-08 株式会社荏原製作所 基板洗浄装置
JP6148475B2 (ja) * 2013-01-25 2017-06-14 株式会社東芝 半導体製造装置および半導体装置の製造方法
JP6117041B2 (ja) * 2013-07-19 2017-04-19 東京エレクトロン株式会社 液処理方法、液処理装置および記憶媒体
JP6104786B2 (ja) * 2013-12-16 2017-03-29 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP6118758B2 (ja) * 2014-05-01 2017-04-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
JP6318012B2 (ja) 2014-06-04 2018-04-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6484144B2 (ja) * 2014-10-17 2019-03-13 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6454245B2 (ja) * 2014-10-21 2019-01-16 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6410694B2 (ja) * 2014-10-21 2018-10-24 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
WO2016063886A1 (ja) * 2014-10-21 2016-04-28 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
WO2016063885A1 (ja) * 2014-10-21 2016-04-28 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6419053B2 (ja) * 2015-10-08 2018-11-07 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102635712B1 (ko) * 2016-03-08 2024-02-14 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치, 기판 세정 방법, 기판 처리 장치 및 기판 건조 장치
JP6424183B2 (ja) * 2016-03-18 2018-11-14 信越半導体株式会社 半導体ウェーハの洗浄方法
JP6569574B2 (ja) * 2016-03-24 2019-09-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
EP3424074B1 (en) * 2016-07-01 2021-10-27 Carbon, Inc. Method and system for spin-coating multi-layer thin films having liquid conservation features
JP6687486B2 (ja) 2016-08-31 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6400766B2 (ja) * 2017-03-23 2018-10-03 東京エレクトロン株式会社 液処理方法、液処理装置および記憶媒体
JP6865632B2 (ja) * 2017-05-09 2021-04-28 東京エレクトロン株式会社 基板洗浄装置および基板洗浄方法
JP7326003B2 (ja) * 2019-04-09 2023-08-15 株式会社荏原製作所 液体供給装置、洗浄ユニット、基板処理装置
KR102376830B1 (ko) * 2019-09-30 2022-03-21 시바우라 메카트로닉스 가부시끼가이샤 기판 처리 장치
CN111536783B (zh) * 2020-07-10 2020-09-29 清华大学 喷射角度可调的马兰戈尼干燥装置
KR102553224B1 (ko) 2020-07-20 2023-07-10 세메스 주식회사 기판 처리 장치, 그리고 기판 처리 방법
TW202230497A (zh) * 2020-08-28 2022-08-01 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置及記錄媒體
WO2022196384A1 (ja) * 2021-03-18 2022-09-22 東京エレクトロン株式会社 基板処理方法および基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200524029A (en) * 2003-11-18 2005-07-16 Tokyo Electron Ltd Substrate cleaning method, substrate cleaning apparatus and computer-readable recording medium
JP2005327936A (ja) * 2004-05-14 2005-11-24 Canon Inc 基板の洗浄方法及びその製造方法
JP2011014935A (ja) * 2010-10-18 2011-01-20 Tokyo Electron Ltd 基板洗浄装置及び基板洗浄方法。

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3322853B2 (ja) 1999-08-10 2002-09-09 株式会社プレテック 基板の乾燥装置および洗浄装置並びに乾燥方法および洗浄方法
JP2001053045A (ja) * 1999-08-12 2001-02-23 Sefa Technology Kk 水平式スピン洗浄機における移動式シャワーノズルによる均一塗膜散布方式
KR100445259B1 (ko) * 2001-11-27 2004-08-21 삼성전자주식회사 세정방법 및 이를 수행하기 위한 세정 장치
US20060042664A1 (en) * 2004-08-30 2006-03-02 Vishwas Hardikar Apparatus and method for removing a liquid from a rotating substrate surface
JP2007311439A (ja) * 2006-05-17 2007-11-29 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2008258441A (ja) * 2007-04-05 2008-10-23 Apprecia Technology Inc 基板処理方法及び基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200524029A (en) * 2003-11-18 2005-07-16 Tokyo Electron Ltd Substrate cleaning method, substrate cleaning apparatus and computer-readable recording medium
JP2005327936A (ja) * 2004-05-14 2005-11-24 Canon Inc 基板の洗浄方法及びその製造方法
JP2011014935A (ja) * 2010-10-18 2011-01-20 Tokyo Electron Ltd 基板洗浄装置及び基板洗浄方法。

Also Published As

Publication number Publication date
KR20120116352A (ko) 2012-10-22
US9412627B2 (en) 2016-08-09
US20120260952A1 (en) 2012-10-18
JP5789400B2 (ja) 2015-10-07
JP2012222237A (ja) 2012-11-12
KR101760306B1 (ko) 2017-07-21
TW201308470A (zh) 2013-02-16

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