WO2016063886A1 - 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 - Google Patents
基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 Download PDFInfo
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- WO2016063886A1 WO2016063886A1 PCT/JP2015/079616 JP2015079616W WO2016063886A1 WO 2016063886 A1 WO2016063886 A1 WO 2016063886A1 JP 2015079616 W JP2015079616 W JP 2015079616W WO 2016063886 A1 WO2016063886 A1 WO 2016063886A1
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- WIPO (PCT)
- Prior art keywords
- liquid
- substrate
- drying
- cleaning
- processing
- Prior art date
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- 239000007788 liquid Substances 0.000 title claims abstract description 488
- 239000000758 substrate Substances 0.000 title claims abstract description 407
- 238000000034 method Methods 0.000 title claims abstract description 86
- 238000003860 storage Methods 0.000 title claims description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 158
- 238000001035 drying Methods 0.000 claims abstract description 122
- 238000006467 substitution reaction Methods 0.000 claims abstract description 38
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 240
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 141
- 239000005871 repellent Substances 0.000 claims description 78
- 230000008569 process Effects 0.000 claims description 77
- 230000002940 repellent Effects 0.000 claims description 61
- 230000001737 promoting effect Effects 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000003672 processing method Methods 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims 2
- 238000007562 laser obscuration time method Methods 0.000 claims 1
- 230000001133 acceleration Effects 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 20
- 239000011261 inert gas Substances 0.000 description 14
- 238000011084 recovery Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 11
- 230000006870 function Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 238000007599 discharging Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000000785 Invasive Pulmonary Aspergillosis Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a substrate liquid processing method, a substrate liquid processing apparatus, and a computer readable storage medium storing a substrate liquid processing program, in which a surface of a liquid-treated substrate is made water-repellent with a water-repellent liquid and then dried. is there.
- liquid processing is performed on a substrate such as a semiconductor wafer or a liquid crystal substrate with various processing liquids using a substrate liquid processing apparatus, and then the substrate is processed at high speed.
- a drying process is performed to remove the processing liquid remaining on the substrate by rotating.
- the surface tension of the processing liquid remaining on the substrate during the drying process is accompanied by miniaturization of patterns such as circuit patterns and etching mask patterns formed on the surface of the substrate and high aspect ratios. There is a possibility that the pattern formed on the surface of the substrate collapses.
- a water repellent liquid such as a silylating agent is supplied to the substrate to make the surface of the substrate water repellent.
- pure water is supplied as a cleaning liquid to the substrate, and the substrate is rotated at a high speed to remove the cleaning liquid from the surface of the substrate.
- the surface of the substrate is made water repellent so that the contact angle between the pattern and the rinsing liquid is close to 90 degrees to reduce the force of collapsing the pattern with the cleaning liquid, and drying.
- the pattern is prevented from collapsing during processing (see Patent Document 1).
- the rinse liquid tends to remain as water droplets as compared with the hydrophilic substrate.
- a watermark is formed on the surface of the substrate, which may cause particles. For this reason, there is a need for a technique for reducing particles while preventing the pattern from collapsing during the drying process.
- An object of the present invention is to provide a technique capable of reducing particles caused by a watermark while preventing a pattern from collapsing during a drying process.
- a liquid processing step for liquid processing a substrate with a processing liquid a rinsing processing step for rinsing the liquid processed substrate with a rinsing liquid, and a water repellent liquid for the rinse-treated substrate
- a substrate liquid processing method is provided in which the cleaning liquid is replaced with a drying liquid having higher volatility than the cleaning liquid and a drying process step is performed to remove the drying liquid from the substrate.
- Pure water can be used as the cleaning liquid, and IPA (isopropyl alcohol) can be used as the drying liquid and the substitution promoting liquid.
- IPA isopropyl alcohol
- the flow rate of the replacement accelerating liquid supplied to the substrate in the replacement processing step may be larger than the flow rate of the drying liquid supplied to the substrate in the drying processing step.
- the drying liquid may be supplied to the substrate in a lower humidity state than in the cleaning process.
- the replacement process and the cleaning process may be performed simultaneously.
- the replacement accelerating liquid, the cleaning liquid, and the drying liquid may be supplied to the substrate from the same nozzle.
- the mixing ratio of the replacement accelerating liquid and the cleaning liquid may be changed stepwise or continuously and supplied to the substrate.
- the mixing ratio of the cleaning liquid and the drying liquid may be changed stepwise or continuously and supplied to the substrate.
- the drying process includes a step of forming a streaky flow on the substrate from a position where the cleaning liquid is supplied onto the substrate toward an outer peripheral edge of the substrate, and a position closer to the center of the substrate than the position where the cleaning liquid is supplied.
- the step of supplying the drying liquid may be included.
- the step of forming the streaky flow of the cleaning liquid may include moving the supply position of the cleaning liquid from the center side to the outer peripheral side of the substrate.
- a substrate holding unit that holds a substrate, a processing liquid supply unit that supplies a processing liquid to the substrate, and a rinsing liquid that supplies a rinsing liquid to the substrate liquid-treated with the processing liquid
- a supply part a water repellent liquid supply part for supplying a water repellent liquid to the substrate rinsed with a rinse liquid, and a substitution promoting liquid supply for supplying a replacement promoting liquid to the substrate water repellent treated with the water repellent liquid
- a cleaning liquid supply unit that supplies a cleaning liquid to the substrate that has been subjected to the substitution treatment with the substitution accelerating liquid
- a drying liquid supply unit that supplies a drying liquid having a higher volatility than the cleaning liquid to the substrate that has been subjected to the cleaning process with the cleaning liquid;
- the control unit may control the supply of the substitution promoting liquid having a flow rate higher than the flow rate of the drying liquid supplied from the drying liquid supply unit to the substrate from the substitution promoting liquid supply unit.
- the substrate liquid processing apparatus may include a dry gas supply unit that supplies a dry gas to the substrate.
- the control unit supplies the dry liquid from the dry liquid supply unit to the substrate.
- the dry gas may be supplied to the substrate from the dry gas supply unit.
- the control unit may control the supply of the cleaning liquid from the cleaning liquid supply unit simultaneously with the supply of the replacement promotion liquid from the replacement promotion liquid supply unit to the substrate.
- the replacement accelerating liquid, the cleaning liquid, and the drying liquid may be supplied to the substrate from the same nozzle.
- the mixing ratio of the substitution promoting liquid and the cleaning liquid may be changed stepwise or continuously and supplied to the substrate when shifting from the supply of the substitution promoting liquid to the supply of the cleaning liquid.
- the mixing ratio of the cleaning liquid and the drying liquid may be changed stepwise or continuously and supplied to the substrate during the transition from the supply of the cleaning liquid to the supply of the drying liquid.
- the drying liquid may be supplied to the center side of the substrate.
- the supply position of the cleaning liquid that forms the streaky flow may be moved from the center side to the outer peripheral side of the substrate.
- a substrate holding unit for holding a substrate, a processing liquid supply unit for supplying a processing liquid to the substrate, and a rinsing for supplying a rinsing liquid to the substrate liquid-treated with the processing liquid
- a liquid supply part for supplying a water repellent liquid to the substrate rinsed with a rinse liquid
- a substitution promoting liquid for supplying a replacement promoting liquid to the substrate water repellent treated with a water repellent liquid
- a cleaning solution supply unit that supplies a cleaning solution to the substrate that has been subjected to the replacement treatment with the replacement accelerating solution
- a drying solution supply unit that supplies a drying solution having a higher volatility than the cleaning solution to the substrate that has been subjected to the cleaning process with the cleaning solution
- a replacement promoting liquid is supplied from the replacement promoting
- Explanatory drawing which shows a nozzle group. Process drawing of a substrate liquid processing method.
- Explanatory drawing of a substrate liquid processing method (a liquid processing process (a), a rinse process process (b)).
- Explanatory drawing of a substrate liquid processing method (1st substitution process process (a), water-repellent process process (b)).
- Explanatory drawing of a substrate liquid processing method (2nd substitution processing process (a), cleaning process process (b)).
- Explanatory drawing of a substrate liquid processing method drying liquid supply process (a), dry liquid removal process (b)).
- Explanatory drawing of a substrate liquid processing method Explanatory drawing of a substrate liquid processing method.
- the substrate liquid processing apparatus 1 has a carry-in / out section 2 at the front end.
- a carrier 4 containing a plurality of (for example, 25) substrates 3 is carried into and out of the carry-in / out unit 2 and placed side by side on the left and right.
- the substrate liquid processing apparatus 1 has a transport unit 5 at the rear part of the carry-in / out unit 2.
- a substrate transfer device 6 is disposed on the front side of the transfer unit 5, and a substrate delivery table 7 is disposed on the rear side.
- the transport unit 5 the substrate 3 is transported between the carrier 4 placed on the carry-in / out unit 2 and the substrate delivery table 7 using the substrate transport device 6.
- the substrate liquid processing apparatus 1 has a processing unit 8 behind the transfer unit 5.
- a substrate transfer device 9 extending in the front-rear direction is disposed at the center of the processing unit 8.
- Substrate liquid processing units 10 for liquid processing the substrate 3 are arranged on the left and right sides of the substrate transfer device 9 in the front-rear direction.
- the substrate 3 is transferred between the substrate delivery table 7 and the substrate liquid processing unit 10 using the substrate transfer device 9, and the substrate 3 is liquid processed using the substrate liquid processing unit 10.
- the substrate liquid processing unit 10 includes a substrate holding unit 11, a supply unit 12, and a recovery unit 13, which are controlled by a control unit 14.
- the substrate holder 11 rotates while holding the substrate 3.
- the supply unit 12 supplies various liquids and gases to the substrate 3.
- the recovery unit 13 recovers various liquids and gases supplied to the substrate 3.
- the control unit 14 controls the entire operation of the substrate liquid processing apparatus 1 as well as the substrate liquid processing unit 10.
- the substrate holding part 11 has a rotating shaft 16 extending vertically in the center of the inside of the processing chamber 15.
- a disc-shaped turntable 17 is horizontally attached to the upper end of the rotating shaft 16.
- a plurality of substrate holders 18 are attached to the outer peripheral edge of the turntable 17 at equal intervals in the circumferential direction.
- a substrate rotating mechanism 19 and a substrate lifting mechanism 20 are connected to the rotating shaft 16.
- the substrate rotating mechanism 19 and the substrate lifting mechanism 20 are controlled to rotate and lift by the control unit 14.
- the substrate holder 11 horizontally holds the substrate 3 with the substrate holder 18 of the turntable 17. Further, the substrate holding unit 11 rotates the substrate 3 held on the turntable 17 by driving the substrate rotating mechanism 19. Further, the substrate holding unit 11 moves the turntable 17 and the substrate 3 up and down by driving the substrate lifting mechanism 20.
- the supply unit 12 includes a guide rail 21 provided inside the processing chamber 15, an arm 22 movably attached to the guide rail 21, and a nozzle group 23 including a plurality of nozzles attached to the lower end of the arm 22. With. A nozzle moving mechanism 24 that is driven and controlled by the control unit 14 is connected to the arm 22.
- the nozzle group 23 includes a processing liquid supply nozzle 25, a pure water supply nozzle 26, an IPA supply nozzle 27, a water repellent liquid supply nozzle 28, and an inert gas supply nozzle 29.
- a processing liquid supply source 30 for supplying a processing liquid (here, a cleaning chemical) is connected to the processing liquid supply nozzle 25 via a flow rate regulator 31.
- a pure water supply source 32 that supplies pure water is connected to the pure water supply nozzle 26 via a flow rate regulator 33.
- An IPA supply source 34 that supplies IPA (isopropyl alcohol) is connected to the IPA supply nozzle 27 via a flow rate regulator 35.
- a water repellent liquid supply source 36 that supplies a water repellent liquid (here, a silylating agent) is connected to the water repellent liquid supply nozzle 28 via a flow rate regulator 37.
- the inert gas supply nozzle 29 is connected to an inert gas supply source 38 that supplies an inert gas (here, nitrogen gas) via a flow rate regulator 39.
- These flow regulators 31, 33, 35, 37, 39 are subjected to flow control and open / close control by the control unit 14.
- Carbon dioxide gas may be dissolved in advance in pure water supplied from the pure water supply nozzle 26. Thereby, it is possible to suppress the generation of static electricity when pure water flows on the surface of the substrate 3, and it is possible to remove even if static electricity is generated on the surface of the substrate 3.
- the supply unit 12 horizontally moves the nozzles 25 to 29 between the standby position outside the outer peripheral edge of the substrate 3 and the start position above the center of the substrate 3 by the nozzle moving mechanism 24.
- the supply unit 12 discharges the liquid or gas adjusted to a predetermined flow rate by the flow rate adjusters 31, 33, 35, 37, 39 from the nozzles 25 to 29 toward the surface (upper surface) of the substrate 3.
- a plurality of arms 22 that can move independently from each other may be provided, and one or more of the nozzles 25 to 29 may be distributed and attached to each arm. All the nozzles 25 to 29 may be arranged on one common arm.
- a single supply nozzle for supplying both pure water and IPA is provided, switching from IPA supply to pure water supply, and supply of pure water. It may be configured such that switching from IPA supply to IPA supply can be performed continuously. Thereby, when switching between pure water and IPA, the surface of the board
- the collection unit 13 includes an annular collection cup 40 disposed around the turntable 17 as shown in FIG.
- An opening having a size slightly larger than that of the turntable 17 (substrate 3) is formed at the upper end of the recovery cup 40.
- a drain 41 is connected to the lower end of the recovery cup 40.
- the recovery unit 13 recovers the processing liquid supplied to the surface of the substrate 3 with the recovery cup 40 and discharges it from the drain 41 to the outside.
- the drain 41 collects not only the liquid but also the gas (atmosphere) inside the processing chamber 15.
- the FFU 42 can switch between a state in which clean air is supplied and a state in which CDA (Clean Dry) Air) having a humidity lower than that of clean air is supplied.
- CDA Compact Dry
- the FFU 42 functions as a dry gas supply unit that supplies CDA as the dry gas into the processing chamber 15.
- the FFU 42 is driven and controlled by the control unit 14.
- the substrate liquid processing apparatus 1 is configured as described above, and is controlled by the control unit 14 in accordance with various programs stored in the storage medium 43 provided in the control unit 14 (computer) to process the substrate 3.
- the storage medium 43 stores various setting data and programs, and is well-known such as a memory such as a ROM and a RAM, and a disk-shaped storage medium such as a hard disk, a CD-ROM, a DVD-ROM, and a flexible disk. Composed of things.
- the substrate liquid processing apparatus 1 processes the substrate 3 as described below according to the substrate liquid processing program stored in the storage medium 43 (see FIG. 4).
- the substrate liquid processing apparatus 1 receives the substrate 3 transferred by the substrate transfer apparatus 9 by the substrate liquid processing unit 10 (substrate receiving step).
- the control unit 14 raises the turntable 17 to a predetermined position. Then, the single substrate 3 transferred from the substrate transfer device 9 to the inside of the processing chamber 15 is received while being held horizontally by the substrate holder 18. Thereafter, the turntable 17 is lowered to a predetermined position.
- the nozzle group 23 (the treatment liquid supply nozzle 25, the pure water supply nozzle 26, the IPA supply nozzle 27, the water repellent liquid supply nozzle 28, and the inert gas supply nozzle 29) is moved from the outer periphery of the turntable 17. Also retract to the outside standby position.
- the substrate liquid processing apparatus 1 performs liquid processing on the surface of the substrate 3 with a processing liquid such as an etching liquid or a cleaning liquid (liquid processing step).
- a processing liquid such as an etching liquid or a cleaning liquid
- the control unit 14 moves the processing liquid supply nozzle 25 to the start position above the center of the substrate 3. Further, the substrate 3 is rotated by rotating the turntable 17 at a predetermined rotation speed. Thereafter, the processing liquid whose flow rate is adjusted to a predetermined flow rate by the flow rate adjuster 31 is supplied from the processing liquid supply source 30 to the processing liquid supply nozzle 25 and discharged from the processing liquid supply nozzle 25 toward the surface (upper surface) of the substrate 3. . Thereby, the surface of the substrate 3 is liquid-treated with the treatment liquid.
- the processing liquid supplied to the substrate 3 is shaken off to the outside of the outer peripheral edge of the substrate 3 by the centrifugal force of the rotating substrate 3, recovered by the recovery cup 40, and discharged from the drain 41 to the outside. After supplying the processing liquid for a predetermined time, the discharge of the processing liquid is stopped by the flow rate regulator 31.
- the processing liquid supply nozzle 25, the flow rate adjuster 31, the processing liquid supply source 30, and the like mainly function as a processing liquid supply unit.
- clean air or CDA is selected as the gas supplied from the FFU 42 depending on the type of the processing liquid, and the inside of the processing chamber 15 is maintained at a high cleanliness.
- the substrate liquid processing apparatus 1 rinses the surface of the substrate 3 with a rinsing liquid (rinsing process).
- the control unit 14 turns the pure water supply nozzle 26 in a state where the substrate 3 is continuously rotated by rotating the turntable 17 at a predetermined rotation speed. Move to the start position above the center of the substrate 3. Thereafter, pure water whose flow rate is adjusted to a predetermined flow rate by the flow rate regulator 33 is supplied as a rinse liquid from the pure water supply source 32 to the pure water supply nozzle 26 and is discharged from the pure water supply nozzle 26 toward the surface of the substrate 3. . Accordingly, the surface of the substrate 3 is rinsed with the rinse liquid by washing away the treatment liquid on the surface of the substrate 3 with the rinse liquid.
- the rinse liquid supplied to the substrate 3 is shaken off to the outer periphery of the substrate 3 by the centrifugal force of the rotating substrate 3, recovered by the recovery cup 40, and discharged from the drain 41 to the outside. After supplying the rinse liquid for a predetermined time, the discharge of the rinse liquid is stopped by the flow rate regulator 33.
- the pure water supply nozzle 26, the flow rate regulator 33, the pure water supply source 32, etc. mainly function as the rinsing liquid supply unit.
- the substrate liquid processing apparatus 1 performs a replacement process on the surface of the substrate 3 with a replacement promoting liquid (first replacement processing step).
- the control unit 14 keeps rotating the substrate 3 by rotating the turntable 17 at a predetermined rotation speed, and the IPA supply nozzle 27 Is moved to the start position above the center of the substrate 3. Thereafter, the IPA whose flow rate is adjusted to a predetermined flow rate by the flow rate regulator 35 is supplied from the IPA supply source 34 to the IPA supply nozzle 27 as a substitution promoting liquid, and is discharged from the IPA supply nozzle 27 toward the surface of the substrate 3.
- the surface of the substrate 3 can be replaced with IPA from the rinse liquid, and then replaced with the water-repellent liquid supplied later.
- the IPA supplied to the substrate 3 is shaken off to the outside of the outer peripheral edge of the substrate 3 by the centrifugal force of the rotating substrate 3, recovered by the recovery cup 40, and discharged from the drain 41 to the outside.
- the flow rate regulator 35 stops the discharge of IPA.
- the IPA supply nozzle 27, the flow rate regulator 35, the IPA supply source 34, etc. mainly function as a replacement promoting liquid supply unit.
- the rinse liquid (pure water) and the substitution acceleration liquid (IPA) can be discharged simultaneously from the same or different nozzles, and the rinse liquid and the substitution acceleration liquid are mixed during the transition from the rinse treatment process to the first substitution treatment process.
- the ratio may be changed stepwise or gradually continuously.
- mixing includes both mixing before discharging from the nozzle and mixing on the wafer W after discharging.
- mixing ratio is the ratio of the discharge flow rate from each nozzle. is there.
- the substrate liquid processing apparatus 1 performs a water repellent treatment on the surface of the substrate 3 with a water repellent liquid (water repellent treatment step).
- the control unit 14 moves the water repellent liquid supply nozzle 28 to the start position above the center of the substrate 3. Thereafter, the water repellent liquid whose flow rate is adjusted to a predetermined flow rate by the flow rate regulator 37 is supplied from the water repellent liquid supply source 36 to the water repellent liquid supply nozzle 28, and the surface of the substrate 3 is supplied from the water repellent liquid supply nozzle 28. Dispense towards Thereby, the surface of the substrate 3 is subjected to water repellent treatment with the water repellent liquid.
- the water repellent liquid supplied to the substrate 3 is shaken off by the centrifugal force of the rotating substrate 3 to the outside of the outer peripheral edge of the substrate 3, recovered by the recovery cup 40, and discharged from the drain 41 to the outside.
- the flow controller 37 stops the discharge of the water repellent liquid.
- the water repellent liquid supply nozzle 28, the flow rate regulator 37, the water repellent liquid supply source 36, etc. mainly function as the water repellent liquid supply section.
- the control unit 14 selects CDA as the gas supplied from the FFU 42, supplies CDA to the processing chamber 15, and reduces the humidity inside the processing chamber 15.
- the substrate liquid processing apparatus 1 performs a replacement process on the surface of the substrate 3 with a replacement promoting liquid (second replacement process step).
- the control unit 14 continues to rotate the substrate 3 by rotating the turntable 17 at a predetermined rotation speed, and the IPA supply nozzle 27 Is moved to the start position above the center of the substrate 3. Thereafter, the IPA whose flow rate is adjusted to a predetermined flow rate by the flow rate regulator 35 is supplied from the IPA supply source 34 to the IPA supply nozzle 27 and discharged from the IPA supply nozzle 27 toward the surface of the substrate 3. Thereby, the surface of the substrate 3 is replaced with IPA from the water repellent liquid.
- the IPA supplied to the substrate 3 is shaken off to the outside of the outer peripheral edge of the substrate 3 by the centrifugal force of the rotating substrate 3, recovered by the recovery cup 40, and discharged from the drain 41 to the outside.
- the flow rate regulator 35 stops the discharge of IPA.
- the IPA supply nozzle 27, the flow rate regulator 35, the IPA supply source 34, and the like mainly function as a replacement promoting liquid supply unit.
- the control unit 14 selects CDA as the gas supplied from the FFU 42, supplies the CDA to the processing chamber 15, and reduces the humidity inside the processing chamber 15.
- the substrate liquid processing apparatus 1 cleans the surface of the substrate 3 with a cleaning liquid (cleaning process step).
- the controller 14 moves the pure water supply nozzle 26 to the start position above the center of the substrate 3 as shown in FIG. Thereafter, pure water whose flow rate is adjusted to a predetermined flow rate by the flow rate regulator 33 is supplied as a cleaning liquid from the pure water supply source 32 to the pure water supply nozzle 26 and is discharged from the pure water supply nozzle 26 toward the surface of the substrate 3. Thereby, the surface of the substrate 3 is cleaned with the cleaning liquid.
- the water repellent liquid contains a large amount of impurities, and thus there is a possibility that impurities remain on the surface of the substrate 3 after the water repellent effect.
- the impurities remaining on the surface of the substrate 3 can be removed by cleaning the substrate 3 subjected to the water repellent treatment with a cleaning liquid.
- the cleaning liquid supplied to the substrate 3 is shaken off to the outside of the outer peripheral edge of the substrate 3 by the centrifugal force of the rotating substrate 3, recovered by the recovery cup 40, and discharged from the drain 41 to the outside. After supplying the cleaning liquid for a predetermined time, discharge of the cleaning liquid is stopped by the flow rate regulator 33.
- the pure water supply nozzle 26, the flow rate regulator 33, the pure water supply source 32, etc. mainly function as a cleaning liquid supply unit.
- the replacement promoting liquid (IPA) and the cleaning liquid (pure water) may be discharged simultaneously from the same or different nozzles.
- substrate 3 is exposed at the time of switching from a substitution promotion liquid to a washing
- the mixing ratio of the substitution promoting liquid and the cleaning liquid in this case, “mixing” includes both mixing before discharge from the nozzle and mixing on the wafer W after discharge) step by step, Or you may make it change gradually gradually gradually.
- the mixing ratio of the substitution promoting liquid and the cleaning liquid is set to 1: 0, the supply amount of the cleaning liquid is increased with the passage of time to decrease the supply amount of the substitution promoting liquid, and then the predetermined mixing ratio is set. Then, it may be supplied at a ratio for a predetermined time, and then the supply amount of the cleaning liquid may be increased stepwise or continuously and the supply amount of the substitution promoting liquid may be decreased.
- IPA which is a substitution acceleration
- the cleaning liquid can easily penetrate into the pattern of the water-repellent substrate 3, and the cleaning effect can be improved.
- only the cleaning liquid may be supplied after supplying the cleaning liquid containing IPA.
- the control unit 14 selects clean air as the gas supplied from the FFU 42, supplies clean air to the processing chamber 15, and increases the humidity inside the processing chamber 15.
- the cleaning liquid used in the cleaning process is not limited to pure water, and functional water can also be used.
- functional water an alkaline liquid is used, and alkaline (preferably pH 8 or higher) electrolytic ion water, ammonia water diluted to 1 ppm to 20 ppm, hydrogen water, ozone water, or the like can be used.
- the substrate liquid processing apparatus 1 performs a drying process for drying the surface of the substrate 3 (drying process step).
- This drying treatment process includes a drying liquid supply process for supplying a drying liquid for replacing the cleaning liquid to the substrate 3 and a drying liquid removing process for removing the drying liquid supplied to the substrate 3 from the substrate 3.
- a drying liquid a liquid having higher volatility and lower surface tension than the cleaning liquid is used.
- pure water is used as the cleaning liquid
- IPA is used as the drying liquid.
- the control unit 14 keeps rotating the substrate 3 by rotating the turntable 17 at a predetermined rotation speed, and the IPA supply nozzle 27 and the non-supplying nozzle 27 are turned off.
- the active gas supply nozzle 29 is moved to the start position above the center of the substrate 3.
- the IPA whose flow rate has been adjusted to a predetermined flow rate by the flow rate regulator 35 is supplied from the IPA supply source 34 to the IPA supply nozzle 27 as a drying liquid, and discharged from the IPA supply nozzle 27 toward the surface of the substrate 3.
- an inert gas (in this case, nitrogen gas) whose flow rate is adjusted to a predetermined flow rate by the flow rate regulator 39 is supplied from the inert gas supply source 38 to the inert gas supply nozzle 29, and the inert gas supply nozzle 29 supplies the substrate. 3 is discharged toward the surface. Then, the IPA supply nozzle 27 and the inert gas supply nozzle 29 are respectively moved from the start position above the central portion of the substrate 3 toward the position above the outer peripheral edge of the substrate 3. The movement direction of both nozzles 27 and 29 may be the opposite direction or the same direction, but the IPA supply nozzle 27 is always positioned radially outside the inert gas supply nozzle 29.
- an inert gas in this case, nitrogen gas
- the IPA discharged from the IPA supply nozzle 27 to the substrate 3 is forcibly moved toward the outer peripheral edge of the substrate 3 by the inert gas discharged from the inert gas supply nozzle 29, thereby drying the substrate 3.
- the surface of the substrate 3 is replaced with the drying liquid from the cleaning liquid.
- the drying liquid supplied to the substrate 3 is shaken off to the outer periphery of the substrate 3 by the centrifugal force of the rotating substrate 3, recovered by the recovery cup 40, and discharged from the drain 41 to the outside. After supplying the drying liquid for a predetermined time, discharge of the drying liquid is stopped by the flow rate regulator 35.
- the IPA supply nozzle 27, the flow rate regulator 35, the IPA supply source 34, and the like mainly function as the drying liquid supply unit.
- the control unit 14 supplies a smaller amount of the drying liquid to the substrate 3 than the flow rate of the replacement promoting liquid in the first replacement processing process.
- the cleaning liquid (pure water) and the drying liquid (IPA) may be discharged simultaneously from the same or different nozzles during the transition from the cleaning process to the drying liquid supply process. It is possible to prevent exposure and contact with the surrounding atmosphere (ambient gas).
- the mixing ratio of the cleaning liquid and the drying liquid (in this case, “mixing” includes both mixing before discharging from the nozzle and mixing on the wafer W after discharging) stepwise, Or you may make it change gradually gradually gradually.
- the cleaning liquid: drying liquid mixing ratio is set to 1: 0, the drying liquid supply amount is increased over time to decrease the cleaning liquid supply amount, and then the predetermined mixing ratio is reached. It is possible to supply at a ratio for a predetermined time, and then increase the supply amount of the drying liquid stepwise or continuously and decrease the supply amount of the cleaning liquid.
- the control unit 14 has a predetermined rotating speed (a rotating speed higher than the rotating speed in the liquid processing process, the rinsing process, the water repellent process, and the cleaning process). ),
- the substrate 3 is kept rotating by rotating the turntable 17.
- the drying liquid remaining on the surface of the substrate 3 is shaken out of the surface of the substrate 3 by the action of the centrifugal force of the rotating substrate 3, the drying liquid is removed from the surface of the substrate 3, and the surface of the substrate 3 is dried. Is done.
- the nozzle group 23 (the treatment liquid supply nozzle 25, the pure water supply nozzle 26, the IPA supply nozzle 27, the water repellent liquid supply nozzle 28, and the inert gas supply nozzle 29) is connected to the outer periphery of the turntable 17. It is retracted to the standby position outside.
- the control unit 14 selects CDA as the gas supplied from the FFU 42 to the process chamber 15 and reduces the humidity inside the process chamber 15 to be lower than the humidity in the cleaning process. Thereby, drying of the board
- the substrate liquid processing apparatus 1 delivers the substrate 3 from the substrate liquid processing unit 10 to the substrate transfer apparatus 9 (substrate delivery process).
- control unit 14 raises the turntable 17 to a predetermined position. Then, the substrate 3 held by the turntable 17 is transferred to the substrate transfer device 9. Thereafter, the turntable 17 is lowered to a predetermined position.
- the substrate liquid processing apparatus 1 the substrate liquid processing method executed by the substrate liquid processing apparatus 1
- the substrate 3 that has been subjected to the water repellent treatment with the water repellent liquid is washed with the cleaning liquid, and then the cleaning liquid is used.
- the substrate 3 is dried by replacing the cleaning solution with a highly volatile drying solution and removing the drying solution from the substrate 3.
- the substrate 3 after the water repellent treatment is cleaned with a cleaning liquid such as pure water.
- a cleaning liquid such as pure water.
- the cleaning liquid is in droplets on the surface of the substrate 3. If the substrate 3 is rotated at high speed and dried as it is, a watermark is formed on the surface of the substrate 3 by the droplet-like cleaning liquid, and the substrate 3 cannot be dried well.
- the cleaning liquid on the surface of the substrate 3 is replaced with a drying liquid having higher volatility than the cleaning liquid, and then the substrate 3 is rotated at high speed to be dried, thereby smoothly removing the drying liquid from the surface of the substrate 3. And the substrate 3 can be dried well.
- the process with the subsequent liquid for example, the cleaning process with pure water
- the process with the subsequent liquid can be started from the middle of the process with the previous liquid.
- the process proceeds from a cleaning process performed for cleaning impurities contained in the water repellent solution to a drying process using IPA will be described below.
- the control unit 14 keeps the substrate 3 rotated by rotating the turntable 17 at a predetermined rotational speed, and moves the pure water supply nozzle 26 to the center of the substrate 3.
- the IPA supply nozzle 27 is moved to a position adjacent to the pure water supply nozzle 26 while being moved to the start position above the unit.
- pure water is discharged as a cleaning liquid from the pure water supply nozzle 26 toward the center of the surface of the substrate 3.
- the pure water supply nozzle 26 is moved from the upper center of the substrate 3 toward the outer periphery of the substrate 3 while discharging pure water, and the IPA supply nozzle 27 is moved to the pure water.
- the IPA supply nozzle 27 When the IPA supply nozzle 27 is positioned above the center of the substrate 3, the IPA is discharged as a drying liquid from the IPA supply nozzle 27 toward the center of the substrate 3. At that time, the flow rate or / and the number of rotations are controlled so that a streak-like flow is formed on the surface of the substrate 3.
- the number of rotations of the substrate 3 may be reduced as compared with the cleaning process, or the supply amount of pure water may be reduced. In particular, reducing the amount of pure water supplied is more preferable because it leads to a reduction in the amount of pure water consumed compared to reducing the rotational speed.
- the region through which the streaky flow passes is covered with a pure water liquid film thinner than the pure water liquid film in the cleaning process.
- the pure water supply nozzle 26 and the IPA supply nozzle 27 are moved upward above the outer peripheral edge of the substrate 3.
- the pure water supplied from the pure water supply nozzle 26 flows toward the outer peripheral edge of the substrate 3 while maintaining a streak-like flow on the surface of the substrate 3.
- a streak-like flow composed of IPA and pure water is formed. Impurities remaining on the surface of the substrate 3 can be removed by pure water contained in the streaky flow.
- IPA having a low surface tension is mixed, an unbroken streak-like flow can be formed, so that impurities remaining on the surface of the substrate 3 can be uniformly removed.
- the cleaning effect can be improved.
- the liquid film of pure water is gradually replaced with an IPA liquid film having a surface tension lower than that of pure water, and the surface of the substrate 3 is not exposed.
- the concentration of IPA is high at the upstream end of the streaky flow. For this reason, a drying area
- the cleaning process and the drying process by the streaky flow can be performed at the same time, the time of the drying process can be shortened, and the throughput of the substrate liquid processing apparatus 1 can be improved. Furthermore, the cleaning effect can be improved by forming a streak-like flow.
- the pure water supply nozzle 26 is moved from above the central portion of the substrate 3 toward the upper peripheral edge of the substrate 3 while discharging pure water, and the IPA supply nozzle 27 is moved to the substrate.
- the IPA may be discharged as a drying liquid from the IPA supply nozzle 27 toward the center of the substrate 3.
- the pure water supplied from the pure water supply nozzle 26 maintains a streak-like flow on the surface of the substrate 3 and has a streak shape composed of IPA and pure water flowing toward the outer peripheral edge of the substrate 3. A flow is formed. Impurities remaining on the surface of the substrate 3 can be removed by pure water contained in the streaky flow.
- a continuous streak-like flow can be formed by mixing IPAs having a low surface tension, and the streaky flow moves from the center of the substrate 3 toward the outer peripheral edge. Impurities remaining on the surface can be removed uniformly. Moreover, it becomes easy for pure water to permeate into the pattern of the substrate 3, and the cleaning effect can be improved.
- the region through which the streaky flow passes is covered with a pure water liquid film that is thinner than the pure water liquid film in the cleaning process, but the pure water liquid film is gradually replaced with the IPA liquid film. Therefore, the surface of the substrate 3 is not exposed.
- the drying liquid removing step can be performed immediately. Since this drying liquid removal process is the same as the drying liquid removal process described in the previous embodiment, the description thereof is omitted.
- the drying liquid removing step can be performed immediately after the cleaning process by the streak-like flow, the time for the drying process can be shortened and the throughput of the substrate liquid processing apparatus 1 can be improved. Furthermore, the cleaning effect can be improved by forming a streak-like flow of pure water after the cleaning process. Further, the cleaning process by the streak-like flow can be performed without exposing the surface of the substrate 3. *
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Abstract
Description
また、純水供給ノズル26とIPA供給ノズル27を設けることに代えて、純水とIPAの両方を供給する1個の供給ノズルを設け、IPA供給から純水供給への切り替え、並びに純水供給からIPA供給への切り替えを連続的に行えるように構成してもよい。これにより、純水とIPAとを切り替える際に基板3の表面が露出して周囲雰囲気(周囲の気体)と接触させにくくすることができる。
なお、第2置換処理工程から洗浄処理工程への移行時には、同一又は別のノズルから置換促進液(IPA)と洗浄液(純水)とを同時に吐出してもよい。これにより、置換促進液から洗浄液への切り替え時に基板3の表面が露出して周囲雰囲気(周囲の気体)と接触させにくくすることができる。このとき、置換促進液と洗浄液との混合比率(この場合も、「混合」とはノズルからの吐出前の混合と、吐出後のウエハW上での混合の両方を含む)を段階的に、あるいは徐々に連続的に変化させてもよい。これにより、基板3の表面に存在する液体の表面張力が徐々に変化するために、表面張力が急激に変化する時と比較して基板3の表面の外気への露出が防止しやすい。たとえば、供給開始時には置換促進液及び洗浄液の混合比率は1:0とし、時間の経過とともに洗浄液の供給量を増加させて置換促進液の供給量を減少させ、その後、予め決められた混合比率になったら決められた時間その比率で供給し、その後、段階的又は連続的に洗浄液の供給量を増加させるとともに置換促進液の供給量を減少させるようにしてもよい。
また、洗浄処理工程の際に、置換促進液であるIPAを洗浄液に含ませて供給してもよい。これにより、撥水化した基板3のパターン内に洗浄液が浸透しやすくなり、洗浄効果を向上させることができる。さらに、この場合に、IPAを含む洗浄液を供給した後に、洗浄液のみを供給してもよい。IPAを含む洗浄液が十分にパターン内に浸透した状態で新たに洗浄液を供給することにより、新たに供給された洗浄液もパターン内に容易に浸透するため、洗浄効果をより向上させることができる。この洗浄処理工程では、制御部14は、FFU42から供給される気体として清浄空気を選択し、処理室15に清浄空気を供給し、処理室15の内部の湿度を増加させている。
このように、基板3にIPAを供給することで、基板3の表面が洗浄液から乾燥液に置換される。基板3に供給された乾燥液は、回転する基板3の遠心力で基板3の外周外方へ振り切られ、回収カップ40で回収されてドレイン41から外部に排出される。乾燥液を所定時間供給した後に、流量調整器35によって乾燥液の吐出を停止させる。このように、乾燥液供給工程では、主にIPA供給ノズル27、流量調整器35、IPA供給源34などが乾燥液供給部として機能する。この乾燥液供給工程では、制御部14は、第1置換処理工程における置換促進液の流量よりも少量の乾燥液を基板3に供給している。
なお、洗浄処理工程から乾燥液供給工程への移行時に同一又は別のノズルから洗浄液(純水)と乾燥液(IPA)とを同時に吐出させてもよく、そうすることにより、基板3の表面が露出して周囲雰囲気(周囲の気体)と接触することを防止することができる。またこのとき、洗浄液と乾燥液との混合比率(この場合も、「混合」とはノズルからの吐出前の混合と、吐出後のウエハW上での混合の両方を含む)を段階的に、あるいは徐々に連続的に変化させてもよい。これにより、基板3の表面に存在する液体の表面張力が徐々に変化するために、表面張力が急激に変化する時と比較して基板3の表面の外気への露出が防止しやすい。たとえば、供給開始時には洗浄液:乾燥液の混合比率は1:0とし、時間の経過とともに乾燥液の供給量を増加させて洗浄液の供給量を減少させ、その後、予め決められた混合比率になったら決められた時間その比率で供給し、その後、段階的又は連続的に乾燥液の供給量を増加させるとともに洗浄液の供給量を減少させるようにしてもよい。
Claims (20)
- 基板を処理液で液処理する液処理工程と、液処理した前記基板をリンス液でリンス処理するリンス処理工程と、リンス処理した前記基板を撥水化液で撥水処理する撥水処理工程とを行い、
次に、撥水処理した前記基板を置換促進液で置換処理する置換処理工程と、撥水処理した前記基板を洗浄液で洗浄処理する洗浄処理工程とを行い、
その後、前記洗浄液よりも揮発性の高い乾燥液で前記洗浄液を置換するとともに前記基板から前記乾燥液を除去する乾燥処理工程を行うことを特徴とする基板液処理方法。 - 前記洗浄液として純水を用い、前記乾燥液及び前記置換促進液としてIPA(イソプロピルアルコール)を用いることを特徴とする請求項1に記載の基板液処理方法。
- 前記置換処理工程で前記基板に供給される前記置換促進液の流量は、前記乾燥処理工程で前記基板に供給される前記乾燥液の流量よりも多いこと特徴とする請求項1に記載の基板液処理方法。
- 前記乾燥処理工程は、前記洗浄処理工程よりも低湿度状態で前記乾燥液を前記基板に供給することを特徴とする請求項1に記載の基板液処理方法。
- 前記置換処理工程と前記洗浄処理工程とを同時に行うことを特徴とする請求項1に記載の基板液処理方法。
- 前記置換促進液と前記洗浄液と前記乾燥液を同一のノズルから前記基板に供給することを特徴とする請求項1に記載の基板液処理方法。
- 前記置換処理工程から前記洗浄処理工程への移行時に前記置換促進液と前記洗浄液との混合比率を段階的又は連続的に変化させて前記基板に供給することを特徴とする請求項1に記載の基板液処理方法。
- 前記洗浄処理工程から前記乾燥処理工程への移行時に前記洗浄液と前記乾燥液との混合比率を段階的又は連続的に変化させて前記基板に供給することを特徴とする請求項1に記載の基板液処理方法。
- 前記乾燥処理工程は、前記基板上への前記洗浄液の供給位置から前記基板の外周縁に向かう筋状の流れを前記基板上に形成する工程と、前記洗浄液の供給位置よりも前記基板の中心側に前記乾燥液を供給する工程を含むことを特徴とする請求項1に記載の基板液処理方法。
- 前記洗浄液の筋状の流れを形成する工程は、前記洗浄液の供給位置を前記基板の中心側から外周側へ移動させることを含むこと特徴とする請求項9に記載の基板液処理方法。
- 基板を保持する基板保持部と、
前記基板に処理液を供給する処理液供給部と、
処理液で液処理した前記基板にリンス液を供給するリンス液供給部と、
リンス液でリンス処理した前記基板に撥水化液を供給する撥水化液供給部と、
撥水化液で撥水処理した前記基板に置換促進液を供給する置換促進液供給部と、
置換促進液で置換処理した前記基板に洗浄液を供給する洗浄液供給部と、
洗浄液で洗浄処理した前記基板に前記洗浄液よりも揮発性の高い乾燥液を供給する乾燥液供給部と、
前記置換促進液供給部から前記撥水化液で撥水処理した前記基板に置換促進液を供給し、前記洗浄液供給部から前記基板に洗浄液を供給した後に、前記乾燥液供給部から前記基板に乾燥液を供給し、その後、前記基板から前記乾燥液を除去するように制御する制御部とを備えたことを特徴とする基板液処理装置。 - 前記制御部は、前記乾燥液供給部から前記基板に供給する前記乾燥液の流量よりも多い流量の前記置換促進液を前記置換促進液供給部から前記基板に供給するよう制御することを特徴とする請求項11に記載の基板液処理装置。
- 前記基板に乾燥気体を供給する乾燥気体供給部を有し、
前記制御部は、前記乾燥液供給部から前記基板に前記乾燥液を供給する際に、前記乾燥気体供給部から前記乾燥気体を前記基板に供給することを特徴とする請求項11に記載の基板液処理装置。 - 前記制御部は、前記基板に前記置換促進液供給部から前記置換促進液を供給すると同時に、前記洗浄液供給部から前記洗浄液を供給するよう制御することを特徴とする請求項11に記載の基板液処理装置。
- 前記置換促進液と前記洗浄液と前記乾燥液を同一のノズルから前記基板に供給することを特徴とする請求項11に記載の基板液処理装置。
- 前記置換促進液の供給から前記洗浄液の供給への移行時に前記置換促進液と前記洗浄液との混合比率を段階的又は連続的に変化させて前記基板に供給することを特徴とする請求項11に記載の基板液処理装置。
- 前記洗浄液の供給から前記乾燥液の供給への移行時に前記洗浄液と前記乾燥液との混合比率を段階的又は連続的に変化させて前記基板に供給することを特徴とする請求項11に記載の基板液処理装置。
- 前記洗浄液の供給から前記乾燥液の供給への移行時に、前記基板上への前記洗浄液の供給位置から前記基板の外周縁に向かう筋状の流れを前記基板上に形成し、前記洗浄液の供給位置よりも前記基板の中心側に前記乾燥液を供給することを特徴とする請求項11に記載の基板液処理装置。
- 前記筋状の流れを形成する前記洗浄液の供給位置を前記基板の中心側から外周側へ移動させることを特徴とする請求項18に記載の基板液処理装置。
- 基板を保持する基板保持部と、前記基板に処理液を供給する処理液供給部と、処理液で液処理した前記基板にリンス液を供給するリンス液供給部と、リンス液でリンス処理した前記基板に撥水化液を供給する撥水化液供給部と、撥水化液で撥水処理した前記基板に置換促進液を供給する置換促進液供給部と、置換促進液で置換処理した前記基板に洗浄液を供給する洗浄液供給部と、洗浄液で洗浄処理した前記基板に前記洗浄液よりも揮発性の高い乾燥液を供給する乾燥液供給部と、これらを制御する制御部とを有する基板液処理装置を用いて前記基板を処理させる基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体において、
前記置換促進液供給部から前記基板に置換促進液を供給し、前記洗浄液供給部から前記基板に洗浄液を供給した後に、前記乾燥液供給部から前記基板に乾燥液を供給し、その後、前記基板から前記乾燥液を除去するように制御することを特徴とする基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012101197A (ja) * | 2010-11-11 | 2012-05-31 | Toshiba Corp | 排ガス処理装置、方法、及び半導体製造システム |
JP2012222237A (ja) * | 2011-04-12 | 2012-11-12 | Tokyo Electron Ltd | 液処理方法及び液処理装置 |
JP2013115370A (ja) * | 2011-11-30 | 2013-06-10 | Tokyo Electron Ltd | 基板処理方法、この基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体、および基板処理装置 |
-
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2012101197A (ja) * | 2010-11-11 | 2012-05-31 | Toshiba Corp | 排ガス処理装置、方法、及び半導体製造システム |
JP2012222237A (ja) * | 2011-04-12 | 2012-11-12 | Tokyo Electron Ltd | 液処理方法及び液処理装置 |
JP2013115370A (ja) * | 2011-11-30 | 2013-06-10 | Tokyo Electron Ltd | 基板処理方法、この基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体、および基板処理装置 |
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