TWI508261B - 半導體裝置和其製造方法 - Google Patents

半導體裝置和其製造方法 Download PDF

Info

Publication number
TWI508261B
TWI508261B TW098131933A TW98131933A TWI508261B TW I508261 B TWI508261 B TW I508261B TW 098131933 A TW098131933 A TW 098131933A TW 98131933 A TW98131933 A TW 98131933A TW I508261 B TWI508261 B TW I508261B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
semiconductor
insulator
layer
semiconductor integrated
Prior art date
Application number
TW098131933A
Other languages
English (en)
Chinese (zh)
Other versions
TW201027710A (en
Inventor
及川欣聰
江口晉吾
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201027710A publication Critical patent/TW201027710A/zh
Application granted granted Critical
Publication of TWI508261B publication Critical patent/TWI508261B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/293—Configurations of stacked chips characterised by non-galvanic coupling between the chips, e.g. capacitive coupling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW098131933A 2008-09-25 2009-09-22 半導體裝置和其製造方法 TWI508261B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008246083 2008-09-25

Publications (2)

Publication Number Publication Date
TW201027710A TW201027710A (en) 2010-07-16
TWI508261B true TWI508261B (zh) 2015-11-11

Family

ID=42036777

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098131933A TWI508261B (zh) 2008-09-25 2009-09-22 半導體裝置和其製造方法

Country Status (4)

Country Link
US (2) US8102034B2 (enExample)
JP (4) JP5395591B2 (enExample)
TW (1) TWI508261B (enExample)
WO (1) WO2010035627A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
JP5491833B2 (ja) * 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
JP5501174B2 (ja) * 2009-09-17 2014-05-21 株式会社半導体エネルギー研究所 半導体装置
KR101767035B1 (ko) 2009-10-01 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US20120001179A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8748964B2 (en) * 2010-10-22 2014-06-10 Micron Technology, Inc. Gettering agents in memory charge storage structures
JP5731369B2 (ja) * 2010-12-28 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2012090799A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5626010B2 (ja) 2011-02-25 2014-11-19 富士通株式会社 半導体装置及びその製造方法、電源装置
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
KR20140019699A (ko) * 2012-08-07 2014-02-17 삼성디스플레이 주식회사 플렉시블 유기 발광 표시 장치 및 그 제조방법
CN203305887U (zh) * 2013-01-17 2013-11-27 欧司朗有限公司 车载照明装置以及具有该照明装置的车辆
DE102013103268B4 (de) 2013-04-02 2016-06-02 Vacuumschmelze Gmbh & Co. Kg Abschirmfolie und Verfahren zum Herstellen einer Abschirmfolie
CN106463466B (zh) 2014-05-06 2019-11-08 英特尔公司 具有集成天线的多层封装件
US20180054077A1 (en) * 2016-08-17 2018-02-22 Apple Inc. Shield for a wirelessly charged electronic device
US10529641B2 (en) * 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US10811334B2 (en) * 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
CN111727502B (zh) * 2018-02-15 2024-07-12 株式会社村田制作所 高频模块
CN111629883A (zh) 2018-04-06 2020-09-04 惠普发展公司，有限责任合伙企业 配置增材制造系统
KR102743108B1 (ko) * 2018-05-14 2024-12-17 가부시키가이샤 도모에가와 코퍼레이션 헤드 마운트 디스플레이
JP7464400B2 (ja) * 2019-06-14 2024-04-09 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 薄膜デバイス

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020129957A1 (en) * 2001-03-19 2002-09-19 Kolb Lowell Edward Low profile non-electrically-conductive component cover for encasing circuit board components to prevent direct contact of a conformal EMI shield
US20050127443A1 (en) * 2002-03-26 2005-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for preparing the same
JP2007241999A (ja) * 2006-02-08 2007-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
US20080224941A1 (en) * 2007-03-13 2008-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0483692A (ja) * 1990-07-26 1992-03-17 Sony Corp Ｉｃカード
AU684174B2 (en) * 1994-05-27 1997-12-04 Assa Abloy Ab Method for fabricating an electronic module and electronic module obtained thereby
JPH1092980A (ja) 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
JP3302293B2 (ja) * 1997-04-07 2002-07-15 キヤノン株式会社 画像形成装置
JPH11250209A (ja) * 1998-03-04 1999-09-17 Dainippon Printing Co Ltd 非接触型ｉｃカード
TW484101B (en) 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
US6224965B1 (en) 1999-06-25 2001-05-01 Honeywell International Inc. Microfiber dielectrics which facilitate laser via drilling
JP4423779B2 (ja) * 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
US7244890B2 (en) * 2001-02-15 2007-07-17 Integral Technologies Inc Low cost shielded cable manufactured from conductive loaded resin-based materials
JP4802398B2 (ja) * 2001-06-08 2011-10-26 凸版印刷株式会社 非接触ｉｃカード
JP2003101222A (ja) * 2001-09-21 2003-04-04 Sony Corp 薄膜回路基板装置及びその製造方法
KR100430001B1 (ko) * 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
JP2003228695A (ja) * 2002-02-04 2003-08-15 Hitachi Cable Ltd 非接触ｉｃカード及びその製造方法
WO2004001848A1 (en) 2002-06-19 2003-12-31 Sten Bjorsell Electronics circuit manufacture
US7485489B2 (en) * 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
JP2005284352A (ja) * 2004-03-26 2005-10-13 Toshiba Corp 携帯可能電子装置
US20050233122A1 (en) * 2004-04-19 2005-10-20 Mikio Nishimura Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein
US8123896B2 (en) 2004-06-02 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Laminating system
TWI372413B (en) * 2004-09-24 2012-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same, and electric appliance
US7566633B2 (en) 2005-02-25 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4860343B2 (ja) * 2005-05-13 2012-01-25 株式会社半導体エネルギー研究所 表示装置の作製方法
US7485511B2 (en) 2005-06-01 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit device and method for manufacturing integrated circuit device
US7727859B2 (en) * 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
CN101278398B (zh) * 2005-09-30 2010-09-29 株式会社半导体能源研究所 半导体器件的制造方法
JP5063066B2 (ja) * 2005-09-30 2012-10-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5008299B2 (ja) * 2005-11-30 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4848758B2 (ja) * 2005-12-19 2011-12-28 大日本印刷株式会社 絶縁性金属層付き非接触ｉｃタグ
EP1818860B1 (en) 2006-02-08 2011-03-30 Semiconductor Energy Laboratory Co., Ltd. RFID device
EP1837304A3 (en) * 2006-03-20 2012-04-18 Semiconductor Energy Laboratory Co., Ltd. Micromachine including a mechanical structure connected to an electrical circuit and method for manufacturing the same
KR101350207B1 (ko) 2006-06-26 2014-01-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 포함하는 용지 및 그 제조 방법
JP2008041422A (ja) * 2006-08-07 2008-02-21 Sony Corp 平面型表示装置及びスペーサ
US7952100B2 (en) 2006-09-22 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5350616B2 (ja) * 2006-09-22 2013-11-27 株式会社半導体エネルギー研究所 半導体装置
JP5111094B2 (ja) * 2006-12-27 2012-12-26 株式会社半導体エネルギー研究所 半導体装置
US8816484B2 (en) * 2007-02-09 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2372756A1 (en) 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5268395B2 (ja) 2007-03-26 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1976000A3 (en) * 2007-03-26 2009-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5248240B2 (ja) * 2007-08-30 2013-07-31 株式会社半導体エネルギー研究所 半導体装置
CN101803008B (zh) * 2007-09-07 2012-11-28 株式会社半导体能源研究所 半导体装置及其制造方法
WO2009139282A1 (en) * 2008-05-12 2009-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2009142310A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101549530B1 (ko) * 2008-05-23 2015-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5248412B2 (ja) 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8053253B2 (en) 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102057488B (zh) * 2008-06-06 2013-09-18 株式会社半导体能源研究所 半导体装置的制造方法
WO2010032602A1 (en) * 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010032611A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020129957A1 (en) * 2001-03-19 2002-09-19 Kolb Lowell Edward Low profile non-electrically-conductive component cover for encasing circuit board components to prevent direct contact of a conformal EMI shield
US20050127443A1 (en) * 2002-03-26 2005-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for preparing the same
JP2007241999A (ja) * 2006-02-08 2007-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
US20080224941A1 (en) * 2007-03-13 2008-09-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2010102698A (ja) 2010-05-06
JP5395591B2 (ja) 2014-01-22
US20120119339A1 (en) 2012-05-17
WO2010035627A1 (en) 2010-04-01
JP2015084228A (ja) 2015-04-30
US8803298B2 (en) 2014-08-12
US20100072583A1 (en) 2010-03-25
JP2016076226A (ja) 2016-05-12
JP6140244B2 (ja) 2017-05-31
JP5829744B2 (ja) 2015-12-09
US8102034B2 (en) 2012-01-24
JP2014067423A (ja) 2014-04-17
TW201027710A (en) 2010-07-16

Similar Documents

Publication Publication Date Title
TWI508261B (zh) 半導體裝置和其製造方法
JP5380154B2 (ja) 半導体装置
TWI452675B (zh) 半導體裝置和其製造方法
JP5380156B2 (ja) 半導体装置
JP5315134B2 (ja) 半導体装置
JP2014123375A (ja) 半導体装置
JP5306705B2 (ja) 半導体装置
JP5415713B2 (ja) 半導体装置
CN1940977B (zh) 半导体装置
JP5268459B2 (ja) 半導体装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees