TWI508261B - 半導體裝置和其製造方法 - Google Patents

半導體裝置和其製造方法 Download PDF

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Publication number
TWI508261B
TWI508261B TW098131933A TW98131933A TWI508261B TW I508261 B TWI508261 B TW I508261B TW 098131933 A TW098131933 A TW 098131933A TW 98131933 A TW98131933 A TW 98131933A TW I508261 B TWI508261 B TW I508261B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
semiconductor
insulator
layer
semiconductor integrated
Prior art date
Application number
TW098131933A
Other languages
English (en)
Chinese (zh)
Other versions
TW201027710A (en
Inventor
及川欣聰
江口晉吾
Original Assignee
半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201027710A publication Critical patent/TW201027710A/zh
Application granted granted Critical
Publication of TWI508261B publication Critical patent/TWI508261B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW098131933A 2008-09-25 2009-09-22 半導體裝置和其製造方法 TWI508261B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008246083 2008-09-25

Publications (2)

Publication Number Publication Date
TW201027710A TW201027710A (en) 2010-07-16
TWI508261B true TWI508261B (zh) 2015-11-11

Family

ID=42036777

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098131933A TWI508261B (zh) 2008-09-25 2009-09-22 半導體裝置和其製造方法

Country Status (4)

Country Link
US (2) US8102034B2 (enExample)
JP (4) JP5395591B2 (enExample)
TW (1) TWI508261B (enExample)
WO (1) WO2010035627A1 (enExample)

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WO2011040213A1 (en) 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5626010B2 (ja) * 2011-02-25 2014-11-19 富士通株式会社 半導体装置及びその製造方法、電源装置
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
KR20140019699A (ko) * 2012-08-07 2014-02-17 삼성디스플레이 주식회사 플렉시블 유기 발광 표시 장치 및 그 제조방법
CN203305887U (zh) * 2013-01-17 2013-11-27 欧司朗有限公司 车载照明装置以及具有该照明装置的车辆
DE102013103268B4 (de) 2013-04-02 2016-06-02 Vacuumschmelze Gmbh & Co. Kg Abschirmfolie und Verfahren zum Herstellen einer Abschirmfolie
US10128177B2 (en) 2014-05-06 2018-11-13 Intel Corporation Multi-layer package with integrated antenna
US20180054077A1 (en) * 2016-08-17 2018-02-22 Apple Inc. Shield for a wirelessly charged electronic device
US10811334B2 (en) * 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US10529641B2 (en) * 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
CN111727502B (zh) * 2018-02-15 2024-07-12 株式会社村田制作所 高频模块
US11724459B2 (en) 2018-04-06 2023-08-15 Hewlett-Packard Development Company, L.P. Configuring an additive manufacturing system
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JP7464400B2 (ja) * 2019-06-14 2024-04-09 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 薄膜デバイス

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Publication number Priority date Publication date Assignee Title
US20020129957A1 (en) * 2001-03-19 2002-09-19 Kolb Lowell Edward Low profile non-electrically-conductive component cover for encasing circuit board components to prevent direct contact of a conformal EMI shield
US20050127443A1 (en) * 2002-03-26 2005-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for preparing the same
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Also Published As

Publication number Publication date
JP5395591B2 (ja) 2014-01-22
JP5829744B2 (ja) 2015-12-09
JP2016076226A (ja) 2016-05-12
TW201027710A (en) 2010-07-16
US20100072583A1 (en) 2010-03-25
US20120119339A1 (en) 2012-05-17
WO2010035627A1 (en) 2010-04-01
JP2015084228A (ja) 2015-04-30
JP2010102698A (ja) 2010-05-06
US8102034B2 (en) 2012-01-24
US8803298B2 (en) 2014-08-12
JP6140244B2 (ja) 2017-05-31
JP2014067423A (ja) 2014-04-17

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MM4A Annulment or lapse of patent due to non-payment of fees