TWI503444B - 半導體基板處理方法 - Google Patents
半導體基板處理方法 Download PDFInfo
- Publication number
- TWI503444B TWI503444B TW102145178A TW102145178A TWI503444B TW I503444 B TWI503444 B TW I503444B TW 102145178 A TW102145178 A TW 102145178A TW 102145178 A TW102145178 A TW 102145178A TW I503444 B TWI503444 B TW I503444B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- plasma
- electrode
- showerhead electrode
- showerhead
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 67
- 239000000758 substrate Substances 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000012546 transfer Methods 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 24
- 238000004891 communication Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000007921 spray Substances 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims 6
- 239000007789 gas Substances 0.000 description 184
- 210000002381 plasma Anatomy 0.000 description 65
- 235000012431 wafers Nutrition 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 7
- 239000000428 dust Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/730,298 US8069817B2 (en) | 2007-03-30 | 2007-03-30 | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201414870A TW201414870A (zh) | 2014-04-16 |
| TWI503444B true TWI503444B (zh) | 2015-10-11 |
Family
ID=39795184
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102145178A TWI503444B (zh) | 2007-03-30 | 2008-03-28 | 半導體基板處理方法 |
| TW097111315A TWI512135B (zh) | 2007-03-30 | 2008-03-28 | 用於半導體材料處理設備之具有低微塵粒特性的噴淋頭電極與噴淋頭電極組件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097111315A TWI512135B (zh) | 2007-03-30 | 2008-03-28 | 用於半導體材料處理設備之具有低微塵粒特性的噴淋頭電極與噴淋頭電極組件 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8069817B2 (https=) |
| JP (2) | JP5656626B2 (https=) |
| KR (2) | KR101512524B1 (https=) |
| CN (1) | CN101663417B (https=) |
| TW (2) | TWI503444B (https=) |
| WO (1) | WO2008121288A1 (https=) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8069817B2 (en) * | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
| US8216418B2 (en) * | 2007-06-13 | 2012-07-10 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
| US8187414B2 (en) | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
| US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
| US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
| JP5417338B2 (ja) * | 2007-10-31 | 2014-02-12 | ラム リサーチ コーポレーション | 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法 |
| CN101488446B (zh) | 2008-01-14 | 2010-09-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备及其气体分配装置 |
| US8187413B2 (en) * | 2008-03-18 | 2012-05-29 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket |
| US20090236214A1 (en) * | 2008-03-20 | 2009-09-24 | Karthik Janakiraman | Tunable ground planes in plasma chambers |
| KR101004927B1 (ko) * | 2008-04-24 | 2010-12-29 | 삼성엘이디 주식회사 | Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치 |
| JP5231117B2 (ja) * | 2008-07-24 | 2013-07-10 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
| US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
| WO2011009002A2 (en) * | 2009-07-15 | 2011-01-20 | Applied Materials, Inc. | Flow control features of cvd chambers |
| DE102009037299A1 (de) * | 2009-08-14 | 2011-08-04 | Leybold Optics GmbH, 63755 | Vorrichtung und Behandlungskammer zur thermischen Behandlung von Substraten |
| KR101118477B1 (ko) * | 2009-11-26 | 2012-03-12 | 주식회사 테스 | 가스 분산판 및 이를 갖는 공정 챔버 |
| JP5835722B2 (ja) * | 2009-12-10 | 2015-12-24 | オルボテック エルティ ソラー，エルエルシー | 自動順位付け多方向直列型処理装置 |
| JP5650479B2 (ja) * | 2010-09-27 | 2015-01-07 | 東京エレクトロン株式会社 | 電極及びプラズマ処理装置 |
| SG192967A1 (en) | 2011-03-04 | 2013-09-30 | Novellus Systems Inc | Hybrid ceramic showerhead |
| US9082593B2 (en) * | 2011-03-31 | 2015-07-14 | Tokyo Electron Limited | Electrode having gas discharge function and plasma processing apparatus |
| US10224182B2 (en) | 2011-10-17 | 2019-03-05 | Novellus Systems, Inc. | Mechanical suppression of parasitic plasma in substrate processing chamber |
| KR101503512B1 (ko) * | 2011-12-23 | 2015-03-18 | 주성엔지니어링(주) | 기판 처리 장치 및 기판 처리 방법 |
| JP5848140B2 (ja) * | 2012-01-20 | 2016-01-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20140060434A1 (en) * | 2012-09-04 | 2014-03-06 | Applied Materials, Inc. | Gas injector for high volume, low cost system for epitaxial silicon depositon |
| US9018022B2 (en) | 2012-09-24 | 2015-04-28 | Lam Research Corporation | Showerhead electrode assembly in a capacitively coupled plasma processing apparatus |
| US8883029B2 (en) * | 2013-02-13 | 2014-11-11 | Lam Research Corporation | Method of making a gas distribution member for a plasma processing chamber |
| US9449795B2 (en) * | 2013-02-28 | 2016-09-20 | Novellus Systems, Inc. | Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor |
| US10808317B2 (en) * | 2013-07-03 | 2020-10-20 | Lam Research Corporation | Deposition apparatus including an isothermal processing zone |
| KR101560623B1 (ko) * | 2014-01-03 | 2015-10-15 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
| US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US10221483B2 (en) | 2014-05-16 | 2019-03-05 | Applied Materials, Inc. | Showerhead design |
| DE102015110440A1 (de) * | 2014-11-20 | 2016-05-25 | Aixtron Se | CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate |
| US9859088B2 (en) * | 2015-04-30 | 2018-01-02 | Lam Research Corporation | Inter-electrode gap variation methods for compensating deposition non-uniformity |
| KR101698433B1 (ko) * | 2015-04-30 | 2017-01-20 | 주식회사 에이씨엔 | 기상식각 및 세정을 위한 플라즈마 장치 |
| US10378107B2 (en) * | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
| CN106637132B (zh) * | 2015-10-29 | 2020-01-10 | 沈阳拓荆科技有限公司 | 循环媒介自动控温、热传导气体传导温度的晶圆反应台 |
| CN106711004B (zh) * | 2015-11-13 | 2018-08-24 | 北京北方华创微电子装备有限公司 | 进气机构和等离子刻蚀机 |
| CN106898534B (zh) * | 2015-12-21 | 2019-08-06 | 中微半导体设备(上海)股份有限公司 | 等离子体约束环、等离子体处理装置与基片处理方法 |
| WO2017213193A1 (ja) * | 2016-06-10 | 2017-12-14 | 東京エレクトロン株式会社 | 銅層をエッチングする方法 |
| JP6146840B1 (ja) | 2016-08-04 | 2017-06-14 | 日本新工芯技株式会社 | 電極板 |
| US10403476B2 (en) * | 2016-11-09 | 2019-09-03 | Lam Research Corporation | Active showerhead |
| US10607817B2 (en) | 2016-11-18 | 2020-03-31 | Applied Materials, Inc. | Thermal repeatability and in-situ showerhead temperature monitoring |
| DE102017100192A1 (de) * | 2017-01-06 | 2018-07-12 | Cinogy Gmbh | Permanente Wundauflage mit Plasmaelektrode |
| JP2020516770A (ja) | 2017-04-07 | 2020-06-11 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 基板端部上のプラズマ密度制御 |
| CN108962713B (zh) * | 2017-05-25 | 2020-10-16 | 北京北方华创微电子装备有限公司 | 一种工艺腔室及半导体处理设备 |
| JP6596602B2 (ja) * | 2017-07-05 | 2019-10-23 | 株式会社アルバック | プラズマ処理方法及びプラズマ処理装置 |
| US20190032211A1 (en) * | 2017-07-28 | 2019-01-31 | Lam Research Corporation | Monolithic ceramic gas distribution plate |
| US11598003B2 (en) | 2017-09-12 | 2023-03-07 | Applied Materials, Inc. | Substrate processing chamber having heated showerhead assembly |
| KR102670124B1 (ko) * | 2018-05-03 | 2024-05-28 | 주성엔지니어링(주) | 기판 처리 장치 |
| JP6575641B1 (ja) * | 2018-06-28 | 2019-09-18 | 株式会社明電舎 | シャワーヘッドおよび処理装置 |
| CN110660707B (zh) * | 2018-06-29 | 2022-06-14 | 台湾积体电路制造股份有限公司 | 电浆产生系统及温度调节方法 |
| KR20260046529A (ko) | 2019-08-23 | 2026-04-07 | 램 리써치 코포레이션 | 열 제어된 샹들리에 샤워헤드 |
| CN119980191A (zh) | 2019-08-28 | 2025-05-13 | 朗姆研究公司 | 金属沉积 |
| US12531208B2 (en) | 2019-09-23 | 2026-01-20 | Lam Research Corporation | Low temperature plasma enhanced chemical vapor deposition process including preheated showerhead |
| US20210238746A1 (en) * | 2020-02-03 | 2021-08-05 | Applied Materials, Inc. | Showerhead assembly |
| US11694908B2 (en) * | 2020-10-22 | 2023-07-04 | Applied Materials, Inc. | Gasbox for semiconductor processing chamber |
| JP7114763B1 (ja) | 2021-02-15 | 2022-08-08 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法 |
| JP7717015B2 (ja) * | 2022-03-18 | 2025-08-01 | 東京エレクトロン株式会社 | 上部電極及びプラズマ処理装置 |
| JP2024006589A (ja) * | 2022-07-04 | 2024-01-17 | 三菱マテリアル株式会社 | プラズマ処理装置用の電極板と電極構造 |
| JP2024143017A (ja) * | 2023-03-30 | 2024-10-11 | 三菱マテリアル株式会社 | シリコン部材、および、シリコン部材の製造方法 |
| US12580159B2 (en) * | 2023-11-16 | 2026-03-17 | Applied Materials, Inc. | Plasma showerhead assembly and method of reducing defects |
| WO2025128543A1 (en) * | 2023-12-15 | 2025-06-19 | Lam Research Corporation | Tunable selective lateral etch of silicon using radical species |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20120045902A1 (en) | 2012-02-23 |
| JP5656626B2 (ja) | 2015-01-21 |
| JP2010524205A (ja) | 2010-07-15 |
| US8443756B2 (en) | 2013-05-21 |
| TW200902751A (en) | 2009-01-16 |
| KR20100016083A (ko) | 2010-02-12 |
| KR101570633B1 (ko) | 2015-11-20 |
| JP2015029132A (ja) | 2015-02-12 |
| TWI512135B (zh) | 2015-12-11 |
| WO2008121288A1 (en) | 2008-10-09 |
| CN101663417A (zh) | 2010-03-03 |
| KR20140146212A (ko) | 2014-12-24 |
| JP5826353B2 (ja) | 2015-12-02 |
| US8069817B2 (en) | 2011-12-06 |
| US20080242085A1 (en) | 2008-10-02 |
| CN101663417B (zh) | 2013-12-11 |
| KR101512524B1 (ko) | 2015-04-15 |
| TW201414870A (zh) | 2014-04-16 |
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