JP5656626B2 - 半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ - Google Patents

半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ Download PDF

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JP5656626B2
JP5656626B2 JP2010500976A JP2010500976A JP5656626B2 JP 5656626 B2 JP5656626 B2 JP 5656626B2 JP 2010500976 A JP2010500976 A JP 2010500976A JP 2010500976 A JP2010500976 A JP 2010500976A JP 5656626 B2 JP5656626 B2 JP 5656626B2
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gas
electrode
showerhead electrode
flow path
showerhead
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JP2010524205A (ja
JP2010524205A5 (https=
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アンドレアス フィッシャー，
アンドレアス フィッシャー，
ラージンダー ディーンドサ，
ラージンダー ディーンドサ，
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2010500976A 2007-03-30 2008-03-27 半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ Active JP5656626B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/730,298 US8069817B2 (en) 2007-03-30 2007-03-30 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US11/730,298 2007-03-30
PCT/US2008/003970 WO2008121288A1 (en) 2007-03-30 2008-03-27 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses

Related Child Applications (1)

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JP2014202833A Division JP5826353B2 (ja) 2007-03-30 2014-10-01 半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ

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JP2010524205A JP2010524205A (ja) 2010-07-15
JP2010524205A5 JP2010524205A5 (https=) 2011-05-06
JP5656626B2 true JP5656626B2 (ja) 2015-01-21

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JP2010500976A Active JP5656626B2 (ja) 2007-03-30 2008-03-27 半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ
JP2014202833A Active JP5826353B2 (ja) 2007-03-30 2014-10-01 半導体材料処理装置用の低粒子性能を有するシャワーヘッド電極及びシャワーヘッド電極アセンブリ

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Country Link
US (2) US8069817B2 (https=)
JP (2) JP5656626B2 (https=)
KR (2) KR101512524B1 (https=)
CN (1) CN101663417B (https=)
TW (2) TWI512135B (https=)
WO (1) WO2008121288A1 (https=)

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US8443756B2 (en) 2013-05-21
TWI512135B (zh) 2015-12-11
TW201414870A (zh) 2014-04-16
KR101512524B1 (ko) 2015-04-15
US8069817B2 (en) 2011-12-06
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US20080242085A1 (en) 2008-10-02
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