KR101512524B1 - 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 - Google Patents

반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 Download PDF

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KR101512524B1
KR101512524B1 KR1020097022752A KR20097022752A KR101512524B1 KR 101512524 B1 KR101512524 B1 KR 101512524B1 KR 1020097022752 A KR1020097022752 A KR 1020097022752A KR 20097022752 A KR20097022752 A KR 20097022752A KR 101512524 B1 KR101512524 B1 KR 101512524B1
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gas
showerhead electrode
plenum
electrode
fluid communication
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KR20100016083A (ko
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안드레아스 피셔
라진더 딘드사
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020097022752A 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 Active KR101512524B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/730,298 US8069817B2 (en) 2007-03-30 2007-03-30 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US11/730,298 2007-03-30
PCT/US2008/003970 WO2008121288A1 (en) 2007-03-30 2008-03-27 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147032332A Division KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

Publications (2)

Publication Number Publication Date
KR20100016083A KR20100016083A (ko) 2010-02-12
KR101512524B1 true KR101512524B1 (ko) 2015-04-15

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Application Number Title Priority Date Filing Date
KR1020097022752A Active KR101512524B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리
KR1020147032332A Active KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

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KR1020147032332A Active KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

Country Status (6)

Country Link
US (2) US8069817B2 (https=)
JP (2) JP5656626B2 (https=)
KR (2) KR101512524B1 (https=)
CN (1) CN101663417B (https=)
TW (2) TWI512135B (https=)
WO (1) WO2008121288A1 (https=)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
JP5417338B2 (ja) * 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
CN101488446B (zh) 2008-01-14 2010-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其气体分配装置
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US20090236214A1 (en) 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
JP5231117B2 (ja) * 2008-07-24 2013-07-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
TWI490366B (zh) 2009-07-15 2015-07-01 Applied Materials Inc Ｃｖｄ腔室之流體控制特徵結構
DE102009037299A1 (de) * 2009-08-14 2011-08-04 Leybold Optics GmbH, 63755 Vorrichtung und Behandlungskammer zur thermischen Behandlung von Substraten
KR101118477B1 (ko) * 2009-11-26 2012-03-12 주식회사 테스 가스 분산판 및 이를 갖는 공정 챔버
TWI417984B (zh) * 2009-12-10 2013-12-01 沃博提克Ｌｔ太陽公司 自動排序之多方向性直線型處理裝置
JP5650479B2 (ja) * 2010-09-27 2015-01-07 東京エレクトロン株式会社 電極及びプラズマ処理装置
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
US9082593B2 (en) * 2011-03-31 2015-07-14 Tokyo Electron Limited Electrode having gas discharge function and plasma processing apparatus
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
KR101503512B1 (ko) * 2011-12-23 2015-03-18 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
US9111980B2 (en) * 2012-09-04 2015-08-18 Applied Materials, Inc. Gas exhaust for high volume, low cost system for epitaxial silicon deposition
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
US8883029B2 (en) 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US10808317B2 (en) * 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
KR101560623B1 (ko) * 2014-01-03 2015-10-15 주식회사 유진테크 기판처리장치 및 기판처리방법
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
SG11201608640QA (en) * 2014-05-16 2016-11-29 Applied Materials Inc Showerhead design
DE102015110440A1 (de) * 2014-11-20 2016-05-25 Aixtron Se CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate
KR101698433B1 (ko) * 2015-04-30 2017-01-20 주식회사 에이씨엔 기상식각 및 세정을 위한 플라즈마 장치
US9859088B2 (en) * 2015-04-30 2018-01-02 Lam Research Corporation Inter-electrode gap variation methods for compensating deposition non-uniformity
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN106637132B (zh) * 2015-10-29 2020-01-10 沈阳拓荆科技有限公司 循环媒介自动控温、热传导气体传导温度的晶圆反应台
CN106711004B (zh) * 2015-11-13 2018-08-24 北京北方华创微电子装备有限公司 进气机构和等离子刻蚀机
CN106898534B (zh) * 2015-12-21 2019-08-06 中微半导体设备(上海)股份有限公司 等离子体约束环、等离子体处理装置与基片处理方法
WO2017213193A1 (ja) * 2016-06-10 2017-12-14 東京エレクトロン株式会社 銅層をエッチングする方法
JP6146840B1 (ja) * 2016-08-04 2017-06-14 日本新工芯技株式会社 電極板
US10403476B2 (en) * 2016-11-09 2019-09-03 Lam Research Corporation Active showerhead
US10607817B2 (en) * 2016-11-18 2020-03-31 Applied Materials, Inc. Thermal repeatability and in-situ showerhead temperature monitoring
DE102017100192A1 (de) * 2017-01-06 2018-07-12 Cinogy Gmbh Permanente Wundauflage mit Plasmaelektrode
JP2020516770A (ja) 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
CN108962713B (zh) * 2017-05-25 2020-10-16 北京北方华创微电子装备有限公司 一种工艺腔室及半导体处理设备
WO2019009092A1 (ja) * 2017-07-05 2019-01-10 株式会社アルバック プラズマ処理方法及びプラズマ処理装置
US20190032211A1 (en) * 2017-07-28 2019-01-31 Lam Research Corporation Monolithic ceramic gas distribution plate
US11598003B2 (en) 2017-09-12 2023-03-07 Applied Materials, Inc. Substrate processing chamber having heated showerhead assembly
KR102670124B1 (ko) * 2018-05-03 2024-05-28 주성엔지니어링(주) 기판 처리 장치
JP6575641B1 (ja) * 2018-06-28 2019-09-18 株式会社明電舎 シャワーヘッドおよび処理装置
CN110660707B (zh) 2018-06-29 2022-06-14 台湾积体电路制造股份有限公司 电浆产生系统及温度调节方法
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
JP2022546404A (ja) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション 金属の堆積
WO2021061461A1 (en) * 2019-09-23 2021-04-01 Lam Research Corporation Low temperature plasma enhanced chemical vapor deposition process including preheated showerhead
US20210238746A1 (en) * 2020-02-03 2021-08-05 Applied Materials, Inc. Showerhead assembly
US11694908B2 (en) * 2020-10-22 2023-07-04 Applied Materials, Inc. Gasbox for semiconductor processing chamber
JP7114763B1 (ja) 2021-02-15 2022-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
JP7717015B2 (ja) * 2022-03-18 2025-08-01 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
JP2024006589A (ja) * 2022-07-04 2024-01-17 三菱マテリアル株式会社 プラズマ処理装置用の電極板と電極構造
JP2024143017A (ja) * 2023-03-30 2024-10-11 三菱マテリアル株式会社 シリコン部材、および、シリコン部材の製造方法
US12580159B2 (en) * 2023-11-16 2026-03-17 Applied Materials, Inc. Plasma showerhead assembly and method of reducing defects
WO2025128543A1 (en) * 2023-12-15 2025-06-19 Lam Research Corporation Tunable selective lateral etch of silicon using radical species

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0967685A (ja) * 1995-08-25 1997-03-11 Souzou Kagaku:Kk プラズマエッチング用平行平板電極
WO2005065186A2 (en) * 2003-12-23 2005-07-21 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP2005303329A (ja) * 2005-06-23 2005-10-27 Hitachi Ltd プラズマエッチング装置

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818584A (en) * 1967-09-06 1974-06-25 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor apparatus
JPS5946088B2 (ja) * 1980-08-20 1984-11-10 株式会社日立国際電気 気相反応装置
JPS60128653A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5302964A (en) * 1992-09-25 1994-04-12 Hughes Aircraft Company Heads-up display (HUD) incorporating cathode-ray tube image generator with digital look-up table for distortion correction
DE69420474T2 (de) 1993-06-30 2000-05-18 Applied Materials Inc Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-Vakuum
US5569358A (en) * 1994-06-01 1996-10-29 James River Corporation Of Virginia Imprinting felt and method of using the same
JPH07335635A (ja) * 1994-06-10 1995-12-22 Souzou Kagaku:Kk 平行平板形ドライエッチング装置
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US6153013A (en) * 1996-02-16 2000-11-28 Canon Kabushiki Kaisha Deposited-film-forming apparatus
US5754391A (en) * 1996-05-17 1998-05-19 Saphikon Inc. Electrostatic chuck
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
KR100492258B1 (ko) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
JP4146905B2 (ja) * 1997-04-11 2008-09-10 東京エレクトロン株式会社 処理装置
US5910221A (en) * 1997-06-18 1999-06-08 Applied Materials, Inc. Bonded silicon carbide parts in a plasma reactor
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US5998932A (en) 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
KR20000028097A (ko) 1998-10-30 2000-05-25 김영환 반도체 증착장비용 샤워헤드
TW582050B (en) * 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
JP4055880B2 (ja) * 1999-06-02 2008-03-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理監視用窓部材及びプラズマ処理装置用の電極板
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
JP5165825B2 (ja) * 2000-01-10 2013-03-21 東京エレクトロン株式会社 分割された電極集合体並びにプラズマ処理方法。
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
JP4778655B2 (ja) * 2000-02-04 2011-09-21 アイクストロン、アーゲー １つまたは多くの被膜を基板に沈積する方法および装置
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
JP4896337B2 (ja) * 2000-05-17 2012-03-14 東京エレクトロン株式会社 処理装置およびそのメンテナンス方法，処理装置部品の組立機構およびその組立方法，ロック機構およびそのロック方法
JP4717179B2 (ja) * 2000-06-21 2011-07-06 日本電気株式会社 ガス供給装置及び処理装置
US6506254B1 (en) * 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
TWI334888B (https=) * 2000-09-08 2010-12-21 Tokyo Electron Ltd
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US6818096B2 (en) * 2001-04-12 2004-11-16 Michael Barnes Plasma reactor electrode
US6537928B1 (en) * 2002-02-19 2003-03-25 Asm Japan K.K. Apparatus and method for forming low dielectric constant film
US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US6991999B2 (en) * 2001-09-07 2006-01-31 Applied Materials, Inc. Bi-layer silicon film and method of fabrication
TW573053B (en) * 2001-09-10 2004-01-21 Anelva Corp Surface processing apparatus
US6887341B2 (en) * 2001-11-13 2005-05-03 Tokyo Electron Limited Plasma processing apparatus for spatial control of dissociation and ionization
US6586886B1 (en) * 2001-12-19 2003-07-01 Applied Materials, Inc. Gas distribution plate electrode for a plasma reactor
TWI261875B (en) * 2002-01-30 2006-09-11 Tokyo Electron Ltd Processing apparatus and substrate processing method
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
JP4151308B2 (ja) * 2002-05-17 2008-09-17 東京エレクトロン株式会社 処理装置のガス導入方法
EP1512164B1 (en) * 2002-05-23 2016-01-06 Lam Research Corporation Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
TWI270645B (en) * 2002-09-30 2007-01-11 Lam Res Corp Method and apparatus for processing a substrate
US6838012B2 (en) * 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
JP4472372B2 (ja) * 2003-02-03 2010-06-02 株式会社オクテック プラズマ処理装置及びプラズマ処理装置用の電極板
US7108806B2 (en) * 2003-02-28 2006-09-19 National Starch And Chemical Investment Holding Corporation Conductive materials with electrical stability and good impact resistance for use in electronics devices
JP4122004B2 (ja) * 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
JP4532897B2 (ja) * 2003-12-26 2010-08-25 財団法人国際科学振興財団 プラズマ処理装置、プラズマ処理方法及び製品の製造方法
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7507670B2 (en) * 2004-12-23 2009-03-24 Lam Research Corporation Silicon electrode assembly surface decontamination by acidic solution
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US8163087B2 (en) * 2005-03-31 2012-04-24 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20060288934A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
JP4508054B2 (ja) * 2005-09-12 2010-07-21 パナソニック株式会社 電極部材の製造方法
US8679252B2 (en) * 2005-09-23 2014-03-25 Lam Research Corporation Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
US7895970B2 (en) * 2005-09-29 2011-03-01 Tokyo Electron Limited Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component
US20070128862A1 (en) * 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US7619179B2 (en) * 2006-01-20 2009-11-17 Tokyo Electron Limited Electrode for generating plasma and plasma processing apparatus using same
US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
US7482550B2 (en) * 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
US7875824B2 (en) * 2006-10-16 2011-01-25 Lam Research Corporation Quartz guard ring centering features
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US20080087641A1 (en) * 2006-10-16 2008-04-17 Lam Research Corporation Components for a plasma processing apparatus
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US7862682B2 (en) * 2007-06-13 2011-01-04 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
CN101809717B (zh) * 2007-09-25 2012-10-10 朗姆研究公司 用于等离子处理设备的喷头电极总成的温度控制模块
JP5417338B2 (ja) * 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
US8418649B2 (en) * 2007-12-19 2013-04-16 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0967685A (ja) * 1995-08-25 1997-03-11 Souzou Kagaku:Kk プラズマエッチング用平行平板電極
WO2005065186A2 (en) * 2003-12-23 2005-07-21 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP2005303329A (ja) * 2005-06-23 2005-10-27 Hitachi Ltd プラズマエッチング装置

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US8443756B2 (en) 2013-05-21
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US8069817B2 (en) 2011-12-06
JP5656626B2 (ja) 2015-01-21
KR101570633B1 (ko) 2015-11-20
US20080242085A1 (en) 2008-10-02
CN101663417A (zh) 2010-03-03
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TW200902751A (en) 2009-01-16
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US20120045902A1 (en) 2012-02-23
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