KR101512524B1 - 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 - Google Patents

반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 Download PDF

Info

Publication number
KR101512524B1
KR101512524B1 KR1020097022752A KR20097022752A KR101512524B1 KR 101512524 B1 KR101512524 B1 KR 101512524B1 KR 1020097022752 A KR1020097022752 A KR 1020097022752A KR 20097022752 A KR20097022752 A KR 20097022752A KR 101512524 B1 KR101512524 B1 KR 101512524B1
Authority
KR
South Korea
Prior art keywords
gas
showerhead electrode
plenum
electrode
fluid communication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097022752A
Other languages
English (en)
Korean (ko)
Other versions
KR20100016083A (ko
Inventor
안드레아스 피셔
라진더 딘드사
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20100016083A publication Critical patent/KR20100016083A/ko
Application granted granted Critical
Publication of KR101512524B1 publication Critical patent/KR101512524B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020097022752A 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리 Active KR101512524B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/730,298 US8069817B2 (en) 2007-03-30 2007-03-30 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US11/730,298 2007-03-30
PCT/US2008/003970 WO2008121288A1 (en) 2007-03-30 2008-03-27 Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147032332A Division KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

Publications (2)

Publication Number Publication Date
KR20100016083A KR20100016083A (ko) 2010-02-12
KR101512524B1 true KR101512524B1 (ko) 2015-04-15

Family

ID=39795184

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020097022752A Active KR101512524B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리
KR1020147032332A Active KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147032332A Active KR101570633B1 (ko) 2007-03-30 2008-03-27 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리

Country Status (6)

Country Link
US (2) US8069817B2 (https=)
JP (2) JP5656626B2 (https=)
KR (2) KR101512524B1 (https=)
CN (1) CN101663417B (https=)
TW (2) TWI503444B (https=)
WO (1) WO2008121288A1 (https=)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
JP5417338B2 (ja) * 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
CN101488446B (zh) 2008-01-14 2010-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其气体分配装置
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
JP5231117B2 (ja) * 2008-07-24 2013-07-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
WO2011009002A2 (en) * 2009-07-15 2011-01-20 Applied Materials, Inc. Flow control features of cvd chambers
DE102009037299A1 (de) * 2009-08-14 2011-08-04 Leybold Optics GmbH, 63755 Vorrichtung und Behandlungskammer zur thermischen Behandlung von Substraten
KR101118477B1 (ko) * 2009-11-26 2012-03-12 주식회사 테스 가스 분산판 및 이를 갖는 공정 챔버
JP5835722B2 (ja) * 2009-12-10 2015-12-24 オルボテック エルティ ソラー，エルエルシー 自動順位付け多方向直列型処理装置
JP5650479B2 (ja) * 2010-09-27 2015-01-07 東京エレクトロン株式会社 電極及びプラズマ処理装置
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
US9082593B2 (en) * 2011-03-31 2015-07-14 Tokyo Electron Limited Electrode having gas discharge function and plasma processing apparatus
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
KR101503512B1 (ko) * 2011-12-23 2015-03-18 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
US20140060434A1 (en) * 2012-09-04 2014-03-06 Applied Materials, Inc. Gas injector for high volume, low cost system for epitaxial silicon depositon
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
US8883029B2 (en) * 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US10808317B2 (en) * 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
KR101560623B1 (ko) * 2014-01-03 2015-10-15 주식회사 유진테크 기판처리장치 및 기판처리방법
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10221483B2 (en) 2014-05-16 2019-03-05 Applied Materials, Inc. Showerhead design
DE102015110440A1 (de) * 2014-11-20 2016-05-25 Aixtron Se CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate
US9859088B2 (en) * 2015-04-30 2018-01-02 Lam Research Corporation Inter-electrode gap variation methods for compensating deposition non-uniformity
KR101698433B1 (ko) * 2015-04-30 2017-01-20 주식회사 에이씨엔 기상식각 및 세정을 위한 플라즈마 장치
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN106637132B (zh) * 2015-10-29 2020-01-10 沈阳拓荆科技有限公司 循环媒介自动控温、热传导气体传导温度的晶圆反应台
CN106711004B (zh) * 2015-11-13 2018-08-24 北京北方华创微电子装备有限公司 进气机构和等离子刻蚀机
CN106898534B (zh) * 2015-12-21 2019-08-06 中微半导体设备(上海)股份有限公司 等离子体约束环、等离子体处理装置与基片处理方法
WO2017213193A1 (ja) * 2016-06-10 2017-12-14 東京エレクトロン株式会社 銅層をエッチングする方法
JP6146840B1 (ja) 2016-08-04 2017-06-14 日本新工芯技株式会社 電極板
US10403476B2 (en) * 2016-11-09 2019-09-03 Lam Research Corporation Active showerhead
US10607817B2 (en) 2016-11-18 2020-03-31 Applied Materials, Inc. Thermal repeatability and in-situ showerhead temperature monitoring
DE102017100192A1 (de) * 2017-01-06 2018-07-12 Cinogy Gmbh Permanente Wundauflage mit Plasmaelektrode
JP2020516770A (ja) 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
CN108962713B (zh) * 2017-05-25 2020-10-16 北京北方华创微电子装备有限公司 一种工艺腔室及半导体处理设备
JP6596602B2 (ja) * 2017-07-05 2019-10-23 株式会社アルバック プラズマ処理方法及びプラズマ処理装置
US20190032211A1 (en) * 2017-07-28 2019-01-31 Lam Research Corporation Monolithic ceramic gas distribution plate
US11598003B2 (en) 2017-09-12 2023-03-07 Applied Materials, Inc. Substrate processing chamber having heated showerhead assembly
KR102670124B1 (ko) * 2018-05-03 2024-05-28 주성엔지니어링(주) 기판 처리 장치
JP6575641B1 (ja) * 2018-06-28 2019-09-18 株式会社明電舎 シャワーヘッドおよび処理装置
CN110660707B (zh) * 2018-06-29 2022-06-14 台湾积体电路制造股份有限公司 电浆产生系统及温度调节方法
KR20260046529A (ko) 2019-08-23 2026-04-07 램 리써치 코포레이션 열 제어된 샹들리에 샤워헤드
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
US12531208B2 (en) 2019-09-23 2026-01-20 Lam Research Corporation Low temperature plasma enhanced chemical vapor deposition process including preheated showerhead
US20210238746A1 (en) * 2020-02-03 2021-08-05 Applied Materials, Inc. Showerhead assembly
US11694908B2 (en) * 2020-10-22 2023-07-04 Applied Materials, Inc. Gasbox for semiconductor processing chamber
JP7114763B1 (ja) 2021-02-15 2022-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
JP7717015B2 (ja) * 2022-03-18 2025-08-01 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
JP2024006589A (ja) * 2022-07-04 2024-01-17 三菱マテリアル株式会社 プラズマ処理装置用の電極板と電極構造
JP2024143017A (ja) * 2023-03-30 2024-10-11 三菱マテリアル株式会社 シリコン部材、および、シリコン部材の製造方法
US12580159B2 (en) * 2023-11-16 2026-03-17 Applied Materials, Inc. Plasma showerhead assembly and method of reducing defects
WO2025128543A1 (en) * 2023-12-15 2025-06-19 Lam Research Corporation Tunable selective lateral etch of silicon using radical species

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0967685A (ja) * 1995-08-25 1997-03-11 Souzou Kagaku:Kk プラズマエッチング用平行平板電極
WO2005065186A2 (en) * 2003-12-23 2005-07-21 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP2005303329A (ja) * 2005-06-23 2005-10-27 Hitachi Ltd プラズマエッチング装置

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818584A (en) * 1967-09-06 1974-06-25 Tokyo Shibaura Electric Co Method for manufacturing a semiconductor apparatus
JPS5946088B2 (ja) * 1980-08-20 1984-11-10 株式会社日立国際電気 気相反応装置
JPS60128653A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5302964A (en) * 1992-09-25 1994-04-12 Hughes Aircraft Company Heads-up display (HUD) incorporating cathode-ray tube image generator with digital look-up table for distortion correction
DE69420474T2 (de) * 1993-06-30 2000-05-18 Applied Materials Inc Verfahren zum Spülen und Auspumpen einer Vakuumkammer bis Ultra-Hoch-Vakuum
US5569358A (en) * 1994-06-01 1996-10-29 James River Corporation Of Virginia Imprinting felt and method of using the same
JPH07335635A (ja) * 1994-06-10 1995-12-22 Souzou Kagaku:Kk 平行平板形ドライエッチング装置
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US6153013A (en) * 1996-02-16 2000-11-28 Canon Kabushiki Kaisha Deposited-film-forming apparatus
US5754391A (en) * 1996-05-17 1998-05-19 Saphikon Inc. Electrostatic chuck
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
KR100492258B1 (ko) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
USRE39939E1 (en) * 1997-04-11 2007-12-18 Tokyo Electron Limited Processing system
US5910221A (en) * 1997-06-18 1999-06-08 Applied Materials, Inc. Bonded silicon carbide parts in a plasma reactor
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
KR20000028097A (ko) 1998-10-30 2000-05-25 김영환 반도체 증착장비용 샤워헤드
TW582050B (en) * 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
JP4055880B2 (ja) * 1999-06-02 2008-03-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理監視用窓部材及びプラズマ処理装置用の電極板
JP2001068538A (ja) 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP5165825B2 (ja) * 2000-01-10 2013-03-21 東京エレクトロン株式会社 分割された電極集合体並びにプラズマ処理方法。
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
WO2001057289A1 (de) * 2000-02-04 2001-08-09 Aixtron Ag Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat
DE10007059A1 (de) * 2000-02-16 2001-08-23 Aixtron Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung
US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
TWI228747B (en) * 2000-05-17 2005-03-01 Tokyo Electron Ltd Processing apparatus and the maintenance method, assembling mechanism and method of processing apparatus parts, and lock mechanism and the lock method
JP4717179B2 (ja) * 2000-06-21 2011-07-06 日本電気株式会社 ガス供給装置及び処理装置
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6506254B1 (en) * 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6905079B2 (en) * 2000-09-08 2005-06-14 Tokyo Electron Limited Shower head structure and cleaning method thereof
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US6818096B2 (en) * 2001-04-12 2004-11-16 Michael Barnes Plasma reactor electrode
US6537928B1 (en) * 2002-02-19 2003-03-25 Asm Japan K.K. Apparatus and method for forming low dielectric constant film
US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US6991999B2 (en) * 2001-09-07 2006-01-31 Applied Materials, Inc. Bi-layer silicon film and method of fabrication
US20030047282A1 (en) * 2001-09-10 2003-03-13 Yasumi Sago Surface processing apparatus
US6887341B2 (en) * 2001-11-13 2005-05-03 Tokyo Electron Limited Plasma processing apparatus for spatial control of dissociation and ionization
US6586886B1 (en) * 2001-12-19 2003-07-01 Applied Materials, Inc. Gas distribution plate electrode for a plasma reactor
TWI261875B (en) * 2002-01-30 2006-09-11 Tokyo Electron Ltd Processing apparatus and substrate processing method
US6846726B2 (en) * 2002-04-17 2005-01-25 Lam Research Corporation Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
JP4151308B2 (ja) * 2002-05-17 2008-09-17 東京エレクトロン株式会社 処理装置のガス導入方法
KR101075046B1 (ko) * 2002-05-23 2011-10-19 램 리써치 코포레이션 반도체 공정용 플라즈마 반응기를 위한 다중부재 전극 및다중부재 전극의 일부를 교체하는 방법
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
TWI270645B (en) * 2002-09-30 2007-01-11 Lam Res Corp Method and apparatus for processing a substrate
US6838012B2 (en) * 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
JP4472372B2 (ja) * 2003-02-03 2010-06-02 株式会社オクテック プラズマ処理装置及びプラズマ処理装置用の電極板
US7108806B2 (en) * 2003-02-28 2006-09-19 National Starch And Chemical Investment Holding Corporation Conductive materials with electrical stability and good impact resistance for use in electronics devices
US7615131B2 (en) * 2003-05-12 2009-11-10 Sosul Co., Ltd. Plasma etching chamber and plasma etching system using same
JP4532897B2 (ja) 2003-12-26 2010-08-25 財団法人国際科学振興財団 プラズマ処理装置、プラズマ処理方法及び製品の製造方法
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7507670B2 (en) * 2004-12-23 2009-03-24 Lam Research Corporation Silicon electrode assembly surface decontamination by acidic solution
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US8163087B2 (en) * 2005-03-31 2012-04-24 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20060288934A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
JP4508054B2 (ja) * 2005-09-12 2010-07-21 パナソニック株式会社 電極部材の製造方法
US8679252B2 (en) * 2005-09-23 2014-03-25 Lam Research Corporation Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
US7895970B2 (en) * 2005-09-29 2011-03-01 Tokyo Electron Limited Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component
KR101019293B1 (ko) * 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
US7619179B2 (en) * 2006-01-20 2009-11-17 Tokyo Electron Limited Electrode for generating plasma and plasma processing apparatus using same
US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
US7875824B2 (en) * 2006-10-16 2011-01-25 Lam Research Corporation Quartz guard ring centering features
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US20080087641A1 (en) * 2006-10-16 2008-04-17 Lam Research Corporation Components for a plasma processing apparatus
US7482550B2 (en) * 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US7862682B2 (en) * 2007-06-13 2011-01-04 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
WO2009042137A2 (en) * 2007-09-25 2009-04-02 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
JP5417338B2 (ja) * 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
KR101553422B1 (ko) * 2007-12-19 2015-09-15 램 리써치 코포레이션 플라즈마 처리 장치를 위한 복합 샤워헤드 전극 어셈블리

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0967685A (ja) * 1995-08-25 1997-03-11 Souzou Kagaku:Kk プラズマエッチング用平行平板電極
WO2005065186A2 (en) * 2003-12-23 2005-07-21 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP2005303329A (ja) * 2005-06-23 2005-10-27 Hitachi Ltd プラズマエッチング装置

Also Published As

Publication number Publication date
US20120045902A1 (en) 2012-02-23
JP5656626B2 (ja) 2015-01-21
JP2010524205A (ja) 2010-07-15
US8443756B2 (en) 2013-05-21
TW200902751A (en) 2009-01-16
KR20100016083A (ko) 2010-02-12
KR101570633B1 (ko) 2015-11-20
JP2015029132A (ja) 2015-02-12
TWI512135B (zh) 2015-12-11
WO2008121288A1 (en) 2008-10-09
CN101663417A (zh) 2010-03-03
KR20140146212A (ko) 2014-12-24
JP5826353B2 (ja) 2015-12-02
US8069817B2 (en) 2011-12-06
US20080242085A1 (en) 2008-10-02
TWI503444B (zh) 2015-10-11
CN101663417B (zh) 2013-12-11
TW201414870A (zh) 2014-04-16

Similar Documents

Publication Publication Date Title
KR101512524B1 (ko) 반도체 재료 프로세싱 장치용 저-입자 성능을 갖는 샤워헤드 전극 및 샤워헤드 전극 어셈블리
US7645341B2 (en) Showerhead electrode assembly for plasma processing apparatuses
TWI801413B (zh) 具有加熱的噴淋頭組件之基板處理腔室
US8083855B2 (en) Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
US20040187787A1 (en) Substrate support having temperature controlled substrate support surface
KR102892468B1 (ko) 온도에 민감한 프로세스들을 위해 열적 커플링이 개선된 정전 척
KR20250002447A (ko) 가열식 샤워헤드를 갖는 샤워헤드 조립체
US20260100339A1 (en) Grounded Slit Door for Substrate Process Chamber

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

A107 Divisional application of patent
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180329

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190327

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20200326

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20210326

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20220324

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 11