TWI476904B - 半導體裝置和其製造方法 - Google Patents

半導體裝置和其製造方法 Download PDF

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Publication number
TWI476904B
TWI476904B TW097101667A TW97101667A TWI476904B TW I476904 B TWI476904 B TW I476904B TW 097101667 A TW097101667 A TW 097101667A TW 97101667 A TW97101667 A TW 97101667A TW I476904 B TWI476904 B TW I476904B
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TW
Taiwan
Prior art keywords
layer
semiconductor layer
region
insulating layer
semiconductor
Prior art date
Application number
TW097101667A
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English (en)
Chinese (zh)
Other versions
TW200840028A (en
Inventor
山崎舜平
磯部敦生
鄉戶宏充
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW200840028A publication Critical patent/TW200840028A/zh
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Publication of TWI476904B publication Critical patent/TWI476904B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW097101667A 2007-01-26 2008-01-16 半導體裝置和其製造方法 TWI476904B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007016116 2007-01-26

Publications (2)

Publication Number Publication Date
TW200840028A TW200840028A (en) 2008-10-01
TWI476904B true TWI476904B (zh) 2015-03-11

Family

ID=39666986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097101667A TWI476904B (zh) 2007-01-26 2008-01-16 半導體裝置和其製造方法

Country Status (5)

Country Link
US (1) US7692194B2 (enExample)
JP (1) JP5337380B2 (enExample)
KR (1) KR101498910B1 (enExample)
CN (1) CN101232047B (enExample)
TW (1) TWI476904B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7947981B2 (en) * 2007-01-30 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5415001B2 (ja) * 2007-02-22 2014-02-12 株式会社半導体エネルギー研究所 半導体装置
US7772054B2 (en) * 2007-06-15 2010-08-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5503895B2 (ja) * 2008-04-25 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
US8298949B2 (en) * 2009-01-07 2012-10-30 Lam Research Corporation Profile and CD uniformity control by plasma oxidation treatment
TWI410380B (zh) * 2009-11-11 2013-10-01 Ind Tech Res Inst 光敏玻璃微結構之製造方法及用以製造該微結構之系統
TWI570920B (zh) * 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6005401B2 (ja) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWM421516U (en) 2011-07-05 2012-01-21 Chunghwa Picture Tubes Ltd Top-gate type transistor array substrate
JP6013685B2 (ja) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 半導体装置
US9419146B2 (en) * 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
CN104576399B (zh) * 2014-12-29 2017-08-11 昆山国显光电有限公司 一种薄膜晶体管及其制造方法
JP2020129635A (ja) * 2019-02-12 2020-08-27 株式会社ジャパンディスプレイ 半導体装置および半導体装置の製造方法
CN110664222B (zh) * 2019-09-29 2021-03-26 广东美的厨房电器制造有限公司 烹饪设备及其控制方法、计算机可读存储介质
TWI813217B (zh) * 2021-12-09 2023-08-21 友達光電股份有限公司 半導體裝置及其製造方法
KR20250104641A (ko) * 2023-12-29 2025-07-08 주식회사 어드밴스트뷰테크널러지 Led 소자의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0575114A (ja) * 1991-09-17 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> Ｓｏｉ型半導体装置およびその製造方法
TW313699B (enExample) * 1995-11-30 1997-08-21 Siemens Ag
TWI283069B (en) * 2000-06-23 2007-06-21 Nippon Electric Co Thin film transistor and method for manufacturing of the same

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JPS6148975A (ja) 1984-08-16 1986-03-10 Seiko Epson Corp 薄膜トランジスタ
JPH06268224A (ja) * 1993-03-12 1994-09-22 Mitsubishi Electric Corp 電界効果型トランジスタを含む半導体装置
JPH06275832A (ja) * 1993-03-18 1994-09-30 Toshiba Corp 薄膜トランジスタおよびその製造方法
JP3078720B2 (ja) * 1994-11-02 2000-08-21 三菱電機株式会社 半導体装置およびその製造方法
JP3504025B2 (ja) * 1995-06-06 2004-03-08 三菱電機株式会社 半導体装置およびその製造方法
JP3382840B2 (ja) * 1997-05-23 2003-03-04 シャープ株式会社 半導体装置の製造方法
JP2000216391A (ja) * 1999-01-25 2000-08-04 Sony Corp Ｓｏｉ型半導体装置の製造方法
EP1183732A1 (en) * 2000-03-08 2002-03-06 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing the same
JP4104888B2 (ja) 2002-03-28 2008-06-18 シャープ株式会社 薄膜トランジスタ装置の製造方法
JP3878545B2 (ja) * 2002-12-13 2007-02-07 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US7968884B2 (en) * 2006-12-05 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5337346B2 (ja) 2007-01-26 2013-11-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7947981B2 (en) * 2007-01-30 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0575114A (ja) * 1991-09-17 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> Ｓｏｉ型半導体装置およびその製造方法
TW313699B (enExample) * 1995-11-30 1997-08-21 Siemens Ag
TWI283069B (en) * 2000-06-23 2007-06-21 Nippon Electric Co Thin film transistor and method for manufacturing of the same

Also Published As

Publication number Publication date
KR101498910B1 (ko) 2015-03-05
US20080179675A1 (en) 2008-07-31
US7692194B2 (en) 2010-04-06
JP5337380B2 (ja) 2013-11-06
KR20080070580A (ko) 2008-07-30
TW200840028A (en) 2008-10-01
CN101232047B (zh) 2011-06-29
JP2008205444A (ja) 2008-09-04
CN101232047A (zh) 2008-07-30

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