TWI476870B - Ｓｏｉ基板的製造方法 - Google Patents

Ｓｏｉ基板的製造方法 Download PDF

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Publication number
TWI476870B
TWI476870B TW097111444A TW97111444A TWI476870B TW I476870 B TWI476870 B TW I476870B TW 097111444 A TW097111444 A TW 097111444A TW 97111444 A TW97111444 A TW 97111444A TW I476870 B TWI476870 B TW I476870B
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TW
Taiwan
Prior art keywords
layer
substrate
semiconductor
semiconductor substrate
ion
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TW097111444A
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English (en)
Chinese (zh)
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TW200849495A (en
Inventor
山崎舜平
比嘉榮二
永野庸治
溝井達也
下村明久
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半導體能源研究所股份有限公司
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Publication of TW200849495A publication Critical patent/TW200849495A/zh
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    • H10P14/20—
    • H10P90/1916—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10P34/42—
    • H10P50/00—
    • H10P90/1914—
    • H10W10/181—

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW097111444A 2007-04-20 2008-03-28 Ｓｏｉ基板的製造方法 TWI476870B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007112140 2007-04-20

Publications (2)

Publication Number Publication Date
TW200849495A TW200849495A (en) 2008-12-16
TWI476870B true TWI476870B (zh) 2015-03-11

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Family Applications (1)

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TW097111444A TWI476870B (zh) 2007-04-20 2008-03-28 Ｓｏｉ基板的製造方法

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US (2) US7897476B2 (enExample)
EP (1) EP1983566A2 (enExample)
JP (1) JP5285312B2 (enExample)
KR (1) KR101440930B1 (enExample)
CN (2) CN101290876B (enExample)
TW (1) TWI476870B (enExample)

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TWI883334B (zh) * 2021-06-30 2025-05-11 日商大金工業股份有限公司 積層體的製造方法及積層體

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JP5289805B2 (ja) * 2007-05-10 2013-09-11 株式会社半導体エネルギー研究所 半導体装置製造用基板の作製方法
EP1993127B1 (en) * 2007-05-18 2013-04-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
KR101484296B1 (ko) * 2007-06-26 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제작방법
US8314009B2 (en) * 2007-09-14 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing semiconductor device
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JP2009135430A (ja) * 2007-10-10 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP5527956B2 (ja) 2007-10-10 2014-06-25 株式会社半導体エネルギー研究所 半導体基板の製造方法
CN101842910B (zh) * 2007-11-01 2013-03-27 株式会社半导体能源研究所 用于制造光电转换器件的方法
JP5404064B2 (ja) 2008-01-16 2014-01-29 株式会社半導体エネルギー研究所 レーザ処理装置、および半導体基板の作製方法
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JP5902917B2 (ja) 2010-11-12 2016-04-13 株式会社半導体エネルギー研究所 半導体基板の作製方法
US20130280859A1 (en) * 2010-12-30 2013-10-24 Jae-ho Kim Thin-film transistor and method for manufacturing same
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
CN102222637A (zh) * 2011-06-23 2011-10-19 北京大学 一种绝缘体上锗衬底的制备方法
JP5766530B2 (ja) * 2011-07-13 2015-08-19 株式会社ディスコ 光デバイスウエーハの加工方法
JP5689832B2 (ja) * 2012-02-10 2015-03-25 日本電信電話株式会社 シリコン発光素子の製造方法
US8877603B2 (en) 2012-03-30 2014-11-04 International Business Machines Corporation Semiconductor-on-oxide structure and method of forming
JP6032963B2 (ja) * 2012-06-20 2016-11-30 キヤノン株式会社 Ｓｏｉ基板、ｓｏｉ基板の製造方法および半導体装置の製造方法
JP2015108735A (ja) * 2013-12-05 2015-06-11 旭硝子株式会社 電子デバイスの製造方法
JP6107709B2 (ja) * 2014-03-10 2017-04-05 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP6036732B2 (ja) * 2014-03-18 2016-11-30 信越半導体株式会社 貼り合わせウェーハの製造方法
US9890033B2 (en) 2015-04-06 2018-02-13 Honeywell International Inc. Silicon-on-sapphire device with minimal thermal strain preload and enhanced stability at high temperature
CN105789110B (zh) * 2016-04-25 2019-07-12 中国电子科技集团公司第五十五研究所 Mems开关用高升压倍数电荷泵电路及其制造方法
TWI622169B (zh) * 2017-02-17 2018-04-21 Powerchip Technology Corporation 半導體元件的製造方法
WO2019017034A1 (ja) * 2017-07-19 2019-01-24 三菱電機株式会社 半導体装置の製造方法および半導体装置
CN107326435A (zh) * 2017-07-28 2017-11-07 西安交通大学 一种生长GaN的SiC衬底的剥离方法
US11908723B2 (en) * 2021-12-03 2024-02-20 International Business Machines Corporation Silicon handler with laser-release layers
CN117438293B (zh) * 2023-12-20 2024-03-12 青禾晶元(晋城)半导体材料有限公司 一种注入剥离方法以及其中氢离子注入的方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI883334B (zh) * 2021-06-30 2025-05-11 日商大金工業股份有限公司 積層體的製造方法及積層體
TWI896419B (zh) * 2021-06-30 2025-09-01 日商大金工業股份有限公司 積層體的製造方法及積層體

Also Published As

Publication number Publication date
CN101290876A (zh) 2008-10-22
US7897476B2 (en) 2011-03-01
KR20080094558A (ko) 2008-10-23
CN102543833B (zh) 2014-11-26
KR101440930B1 (ko) 2014-09-15
JP5285312B2 (ja) 2013-09-11
US8193068B2 (en) 2012-06-05
US20110136320A1 (en) 2011-06-09
US20080261376A1 (en) 2008-10-23
CN102543833A (zh) 2012-07-04
JP2008288563A (ja) 2008-11-27
CN101290876B (zh) 2012-03-28
EP1983566A2 (en) 2008-10-22
TW200849495A (en) 2008-12-16

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