WO1997041590A1 - Procede d'assemblage de substrat en semi-conducteur au silicium - Google Patents

Procede d'assemblage de substrat en semi-conducteur au silicium Download PDF

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Publication number
WO1997041590A1
WO1997041590A1 PCT/JP1997/001444 JP9701444W WO9741590A1 WO 1997041590 A1 WO1997041590 A1 WO 1997041590A1 JP 9701444 W JP9701444 W JP 9701444W WO 9741590 A1 WO9741590 A1 WO 9741590A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
semiconductor
bonding
semiconductor substrate
wafer
Prior art date
Application number
PCT/JP1997/001444
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English (en)
Japanese (ja)
Inventor
Shinichi Tomita
Yasunobu Ikeda
Hiroaki Kikuchi
Original Assignee
Sumitomo Sitix Corporation
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Sitix Corporation, Nec Corporation filed Critical Sumitomo Sitix Corporation
Priority to DE19780446T priority Critical patent/DE19780446T1/de
Publication of WO1997041590A1 publication Critical patent/WO1997041590A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Definitions

  • the present invention relates to a method for bonding a silicon semiconductor substrate for bonding a first semiconductor wafer and a second semiconductor wafer.
  • a first semiconductor wafer and a second semiconductor wafer made of single crystal silicon are laminated, and the first wafer and the second wafer are stacked.
  • a bonded semiconductor substrate formed by bonding is known.
  • a hydrophilic treatment is performed on mirror-polished surfaces of two wafers so that the wafer surfaces can be bonded to each other.
  • a manufacturing method in which a film is formed by heat treatment or the like by directly adhering.
  • Such a bonded semiconductor substrate by the conventional bonding method is formed, for example, in the order shown in FIGS. 10 (a) to 10 (c).
  • the surfaces of the first semiconductor wafer 13 and the second semiconductor wafer 14 are oxidized with an oxidizing aqueous solution such as a mixed solution of sulfuric acid and hydrogen peroxide. Perform washing and hydrophilic treatment. At this time, a thin oxide film 4 is formed on the surfaces of the first semiconductor wafer and the second semiconductor wafer.
  • an oxidizing aqueous solution such as a mixed solution of sulfuric acid and hydrogen peroxide.
  • the first semiconductor wafer and the second semiconductor wafer are brought into close contact with each other, and a heat treatment is applied to bond the two semiconductor wafers.
  • the peripheral unbonded portion is ground and removed by etching, and then the surface of the first semiconductor wafer is ground and polished to produce a bonded semiconductor substrate 15. Is done.
  • a method of manufacturing a semiconductor substrate of this kind in which two semiconductor wafers are formed in close contact with each other, for example, Japanese Patent Application Laid-Open Nos. Sho 60-51700 and Sho 60-1212 No. 15 and Japanese Patent Application Laid-Open No. 61-183939 are known.
  • Japanese Patent Application Laid-Open No. Sho 60-510700 discloses that two semiconductor wafers cut from single-crystal silicon are mirror-polished to a surface roughness of 50 nm or less, such as trichlorene. After degreasing, the two semiconductor wafers are immersed in an aqueous solution such as a mixture of sulfuric acid and hydrogen peroxide or aqua regia for 2 hours to perform hydrophilic treatment on the wafer surface, and then washed with water, methanol A method is disclosed in which a cleaning process such as a replacement process and a Freon drying process is performed, and the surfaces of the wafers are brought into close contact with each other in a clean room having a floating amount of dust of 20 Zm 3 .
  • an aqueous solution such as a mixture of sulfuric acid and hydrogen peroxide or aqua regia
  • Japanese Patent Application Laid-Open No. 60-121715 discloses that a semiconductor wafer mirror-polished to a surface roughness of 50 nm or less is subjected to thermal oxidation treatment to form a thermal oxide film. A groove was formed on the surface of the wafer which had been subjected to the thermal oxidation treatment in order to prevent air bubbles from remaining on the bonding surface of the wafer. Thereafter, the surface was subjected to a hydrophilic treatment by boiling in aqua regia, and the surface was separated.
  • Another semiconductor wafer mirror-polished to a roughness of 50 nm or less is subjected to a cleaning treatment and a hydrophilic treatment with a mixed solution of sulfuric acid and hydrogen peroxide, and the two wafers are subjected to a cleaning treatment and a hydrophilic treatment.
  • a method of manufacturing a semiconductor substrate by performing a cleaning process such as a Freon drying process, and finally bringing the two wafer surfaces into direct contact and pressing each other is disclosed.
  • the above-mentioned Japanese Patent Application Laid-Open No. 61-183939 discloses that two semiconductor wafers mirror-polished so as to have a surface roughness of 50 nm or less have surface states of wafers.
  • preprocessing such as degreasing and Augustin film removed by the pretreatment
  • ⁇ E one cog to be used is silicon ⁇ er Ha, for example, treatment with H 2 S 0 4, aqua regia boil, treatment with HF
  • the pre-processed wafer is washed with water and dehydrated by spinner drying.
  • a method of manufacturing a semiconductor substrate in which a heat treatment is performed by bringing the wafer polishing surfaces into close contact with each other is disclosed.
  • voids may occur over time (voids generated when bonded at room temperature and left without heat treatment). This time-lapse void is considered to be formed by desorption of moisture adhering to the bonding surface.
  • the surface of both of the two semiconductor wafers to be bonded was subjected to a water-repellent treatment, and the two semiconductor wafers were bonded to manufacture a bonded semiconductor substrate.
  • the present invention has been made in view of the above circumstances, and a heat treatment is performed by directly adhering two semiconductor wafers, one of which has been subjected to a surface treatment different from hydrophilic and the other has water repellency, and heat-treated. It is intended to provide a method for bonding a silicon semiconductor substrate, which can reduce voids and contaminants at a bonding interface by manufacturing the silicon semiconductor substrate. Disclosure of the invention
  • the invention described in claim 1 of the present application is directed to a bonding method of a silicon semiconductor substrate for bonding a first semiconductor wafer and a second semiconductor wafer whose main surfaces are mirror-polished, One of the wafer and the second semiconductor wafer is hydrophilic on the wafer surface
  • the surface of the other semiconductor wafer 18 is subjected to a water-repellent treatment, and the main surfaces of the first semiconductor wafer and the second semiconductor wafer that have been subjected to the respective treatments are bonded to each other.
  • This is a method for bonding a silicon semiconductor substrate having a configuration in which heat treatment is performed.
  • the invention described in claim 2 of the present application is the invention according to claim 1, wherein the hydrophilic treatment performed on the surface of the one semiconductor wafer is performed by using a solution containing hydrogen peroxide, ozone, or nitric acid.
  • This is a method for bonding a silicon semiconductor substrate configured to clean the wafer.
  • the invention described in claim 3 of the present application is the invention according to claim 1, wherein the water repellency treatment performed on the surface of the other semiconductor wafer is performed by cleaning the semiconductor wafer with a solution containing HF.
  • This is a bonding method for a silicon semiconductor substrate having a configuration performed in this manner.
  • the invention described in claim 4 of the present application is the silicon semiconductor substrate according to claim 1, wherein the water repellency treatment performed on the surface of the other semiconductor wafer is performed by forming a thermal oxide film. This is the joining method.
  • the invention described in claim 5 of the present application is the method for bonding silicon semiconductor substrates according to claim 1, wherein the heat treatment is performed at 100 ° C. or higher.
  • the invention described in claim 6 of the present application is the invention according to claim 1, wherein a thermal oxide film is formed on a surface of any one of the first semiconductor wafer and the second semiconductor wafer.
  • This is a method for manufacturing a silicon semiconductor substrate having the above configuration.
  • the invention described in claim 7 of the present application is the invention according to claim 6, wherein the two semiconductor wafers are washed with a solution containing HF to make one of the semiconductor wafers hydrophilic.
  • the invention described in claim 8 of the present application is based on the invention of the first claim.
  • the invention described in claim 9 of the present application is the invention according to claim 8, wherein one of the first semiconductor wafer and the second semiconductor wafer is a semiconductor wafer.
  • This is a method for bonding a silicon semiconductor substrate having a structure in which the surface is washed with a solution containing HF or a solution containing ammonia to bring the one semiconductor wafer surface to hydrophilicity.
  • the number of particles adhering to the semiconductor wafer is reduced to both of the two semiconductor wafers. This is half of the case where the water-repellent treatment is performed, and it is possible to limit the occurrence of unbonding (void) at the bonding interface of the bonded semiconductor substrate due to the attachment of particles.
  • voids are less likely to be generated, and the generation of voids can be limited.
  • the other semiconductor wafer on which the thermal oxide film is not formed is subjected to a hydrophilizing treatment, bonded and heat-treated, and then bonded.
  • a hydrophilizing treatment By forming the substrate, it is possible to obtain a bonded semiconductor substrate in which contaminants are not mixed and voids with time are prevented as described above.
  • the two semiconductor wafers become hydrophilic and water repellent, respectively. What At the same time, the wafer surface is cleaned.
  • the two semiconductor wafers are washed with a solution containing HF, it becomes possible to perform better purification than washing the wafer with a mixed solution of hydrogen peroxide and ammonia before bonding. Cleaning costs can also be reduced.
  • both surfaces of the first and second semiconductor wafers 18 when a thermal oxide film is formed on both surfaces of the first and second semiconductor wafers 18 by, for example, an oxidation furnace, the surfaces of both the semiconductor wafers are water-repellent.
  • one of the first semiconductor wafer and the second semiconductor wafer is washed with a solution containing HF or a solution containing ammonia, and the other semiconductor wafer is washed. Brings the wafer surface hydrophilic. Thereafter, heat treatment is performed by bringing both surfaces of the semiconductor wafer into close contact with each other, and a back surface of the semiconductor wafer is subjected to grinding and polishing to form a bonded semiconductor substrate.
  • FIGS. 1A to 1D are cross-sectional views illustrating a manufacturing process according to a first specific example of the present invention.
  • FIGS. 2A to 2C are cross-sectional views illustrating a manufacturing process according to a second specific example of the present invention.
  • FIGS. 3A to 3C are cross-sectional views illustrating a manufacturing process according to a third specific example of the present invention.
  • FIGS. 4A to 4D are cross-sectional views illustrating a manufacturing process according to a fourth specific example of the present invention.
  • FIG. 5 is a micrograph showing a bonding interface state of a bonded semiconductor substrate according to a fourth example of the present invention.
  • FIG. 6 is a diagram schematically showing an adhesion interface state of the bonded semiconductor substrate in FIG. 5;
  • FIG. 7 (a) to (d) relate to a fifth specific example of the present invention, It is sectional drawing which shows a manufacturing process.
  • FIGS. 8A and 8B are micrographs showing a bonding interface state of a bonding semiconductor substrate according to a conventional example.
  • 9 (a) and 9 (b) are diagrams schematically showing the bonding interface state of the bonded semiconductor substrate in FIG.
  • FIGS. 10A to 10C are cross-sectional views illustrating a manufacturing process according to a conventional example.
  • 1 (a) to 1 (d) are cross-sectional views showing a manufacturing process sequence of a bonded semiconductor substrate in a first specific example of the present invention.
  • one surface of a first semiconductor wafer 9 and a second semiconductor wafer 10 are mirror-polished, and a thermal oxide film 11 is formed on one of the semiconductor wafers 9 and 10.
  • a thermal oxide film 11 is formed on a first semiconductor wafer 9.
  • a thin oxide film 4 is formed on the second semiconductor wafer 10 by cleaning. The mirror polishing may be performed on both surfaces of the first semiconductor wafer 9 and the second semiconductor wafer 10.
  • the first semiconductor wafer 9 and the second semiconductor wafer 10 are washed with a solution containing HF, and the surface of the first semiconductor wafer 9 is made hydrophilic.
  • the surface of the second semiconductor wafer 10 is made water-repellent.
  • the concentration of the HF solution used for washing and hydrophilizing treatment is 1% or less, for example, a 0.05% HF solution is used.
  • the semiconductor wafer 9 is made hydrophilic. That is, etching is performed to activate the semiconductor wafer surface.
  • the second semiconductor wafer 10 is used for the first semiconductor wafer 9. Washing and water repellency treatment are performed with the same HF solution as the HF solution, and for example, water repellency is achieved using the 0.05% HF solution.
  • the surfaces of both the semiconductor wafer 9 and the semiconductor wafer 10 are brought into close contact at room temperature, and then at 100 ° C. or more. At a temperature of, for example, 11 ° C. for 2 hours.
  • the back surface of the semiconductor wafer 9 is ground and polished to form a bonded semiconductor substrate 12.
  • the first semiconductor wafer 9 on which the thermal oxide film is formed is subjected to the hydrophilic treatment using the HF solution.
  • the present invention is not limited to this.
  • cleaning with ammonia and hydrogen peroxide is performed. (SC-1 washing) and other appropriate hydrophilic treatment may be performed.
  • 2 (a) to 2 (c) are cross-sectional views showing a manufacturing process sequence of a bonded semiconductor substrate according to a second specific example of the present invention.
  • one or both surfaces of the first semiconductor wafer 9 and the second semiconductor wafer 10 are mirror-polished, and a thermal oxide film 11 is formed on both the semiconductor wafers 9 and 10. Form. As described above, the thermal oxide film 11 formed in the oxidation furnace is water repellent.
  • the first semiconductor wafer 9 or the second semiconductor wafer 10 is washed with a solution containing HF or a solution containing ammonia, and the surface of one of the semiconductor wafers is made hydrophilic. Therefore, the surface of the other semiconductor layer 8 is water repellent. In the illustrated example, the surface of the first semiconductor wafer 9 is made hydrophilic.
  • both the semiconductor wafer 9 and the semiconductor wafer 10 are processed by the same processing as in the first specific example. After heat treatment is performed by closely contacting the front surface, and the surrounding unbonded portion is ground and removed by etching, the back surface of the semiconductor wafer 9 is ground and polished to form a bonded semiconductor substrate 12.
  • 3 (a) to 3 (c) are cross-sectional views showing a manufacturing process sequence of a bonded semiconductor substrate in a third specific example of the present invention.
  • one or both surfaces of the first semiconductor wafer 9 and the second semiconductor wafer 10 are mirror-polished, and a thermal oxide film 11 is formed only on the semiconductor wafer 9.
  • the thermal oxide film 11 formed in the oxidation furnace is water-repellent.
  • the second semiconductor wafer 10 is cleaned (SC-1 cleaning, SC-2 cleaning (acid cleaning), etc.) to form a thin oxide film 4 on the surface, and the surface is formed. Be hydrophilic.
  • both the semiconductor wafer 9 and the semiconductor wafer 10 are processed by the same processing as in the first specific example. After heat treatment is performed by closely contacting the front surface, the surrounding unbonded portion is ground and removed by etching, and then the back surface of the semiconductor wafer 9 is ground and polished to form a bonded semiconductor substrate 12.
  • the surface condition of one semiconductor wafer before bonding becomes good, and the cleaning can reduce the cost.
  • a junction semi-conductor with limited contamination The body substrate can be manufactured.
  • This fourth example is based on the following findings. That is, in the bonded semiconductor substrate manufactured by the conventional manufacturing method, since the surface of the wafer has been subjected to a hydrophilic treatment, the surface of the first semiconductor wafer and the surface of the second semiconductor wafer are not provided. An extremely thin oxide film is formed, and the surfaces of the two wafers on which the extremely thin oxide film is formed are brought into direct contact with each other, and a heat treatment is performed at 110 for 2 hours to form a bonding half. When the conductive substrate is formed, an oxide film layer of about 50 A is formed at the bonding interface of the bonded semiconductor substrate (see FIGS. 8A and 9A).
  • the surface of both of the two semiconductor wafers to be bonded is subjected to a water-repellent treatment, and the two semiconductor wafers are bonded to manufacture a bonded semiconductor substrate.
  • a water-repellent treatment an oxide film does not exist on the wafer surface, and two semiconductor wafers having no oxide film on these surfaces are bonded to each other to obtain a temperature of 110 ° C.
  • the bonded semiconductor substrate is formed by heat treatment for 2 hours, the bonded semiconductor substrate is formed without an oxide film layer interposed at the bonding interface, and only a local oxide film exists at the bonding interface of the bonding substrate. (See Figure 8 (b) and Figure 9 (b)).
  • the carrier can move without being hindered by the oxide film layer, and since there is no oxide film at the stage before bonding, contamination by boron or the like can be limited, and predetermined electrical characteristics are maintained. Therefore, the above problem is solved.
  • 4 (a) to 4 (d) are cross-sectional views showing a manufacturing process sequence of a bonded semiconductor substrate according to a fourth specific example of the present invention.
  • one surface of the first semiconductor wafer 2 and the second semiconductor wafer 3 is mirror-polished, and hydrogen peroxide, ozone or One of nitric acid or After washing with a solution containing two substances, a thin oxide film 4 of about 2 nm is formed on the surfaces of the first semiconductor wafer 2 and the second semiconductor wafer 3 to make them hydrophilic.
  • first semiconductor wafer specifically, a 5-inch, N-type, crystal face (100), specific resistance of 1 ⁇ ⁇ cm or more is used
  • second semiconductor wafer a 5-inch, N-type, crystal The surface (100) and the one having a specific resistance of 20Z1 000 ⁇ 'cm or less are used.
  • Each of the first semiconductor wafer and the second semiconductor wafer is not a single crystal as described above, but may be one having a polycrystalline film formed thereon.
  • the mirror polishing may be performed on both surfaces of the first semiconductor wafer 2 and the second semiconductor wafer 3.
  • the cleaning solution for performing the hydrophilic treatment on the semiconductor A8 is a solution containing one or two of hydrogen peroxide, ozone or nitric acid, for example, a mixed solution of ammonia and hydrogen peroxide, or hydrochloric acid and peroxide. Use a mixture of hydrogen and the like.
  • one of the first semiconductor wafer 2 and the second semiconductor wafer 3 whose surface has been made hydrophilic is washed with a solution containing HF, and the surface of the semiconductor wafer 3 is subjected to a water-repellent treatment.
  • the concentration of the HF-containing cleaning solution for the water-repellent treatment in which the oxide film 4 is not formed is 50% or less (for example, 0.5%).
  • the solution may be buffered HF, as long as the solution contains HF.
  • the mirror-polished surfaces of both the first semiconductor wafer and the second semiconductor wafer are adhered at room temperature, and thereafter, at a temperature of 1,000 or more (for example, 11 1 or more). (00 ° C) for 2 hours.
  • FIG. 5 is a diagram showing the state of the bonding interface of the bonded semiconductor substrate manufactured by the manufacturing process shown in the fourth specific example
  • FIG. 6 is a diagram schematically showing the state of the bonding interface of the bonded semiconductor substrate.
  • the bonded semiconductor substrate manufactured by the manufacturing process shown in the fourth example has an oxide film layer not interposed at the bonding interface between the first semiconductor wafer and the second semiconductor wafer. Only intervening (see Figures 5 and 6). This phenomenon becomes remarkable when a high-temperature heat treatment of 100 (TC or more) in a device process, for example, a heat process of 1200 ° C. is performed.
  • the carrier movement is not hindered by the oxide film layer, and contaminants such as boron, which easily enter the oxide film, can be limited. Therefore, the bonded semiconductor substrate having predetermined electric characteristics is maintained. Can be manufactured.
  • the adhesion of particles can be halved, and therefore the void generation rate
  • the one semiconductor wafer has an extremely thin oxide film formed by the hydrophilization treatment, so that the bonded interface of the formed bonded semiconductor substrate is cut off. Oxidation The membrane is only present locally.
  • the conventional defect that predetermined electrical characteristics cannot be obtained due to the interposition of the oxide film layer at the bonding interface of the bonded semiconductor substrate can be improved.
  • the oxide film is present only in one of the semiconductors A8 before the bonding, it is possible to reduce the amount of contamination such as boron by half.
  • 7 (a) to 7 (d) are cross-sectional views showing a manufacturing process sequence of a bonded semiconductor substrate according to a fifth specific example of the present invention.
  • the fifth specific example is to form a groove on the polished surface of at least one of the first semiconductor wafer and the second semiconductor wafer which are mirror-polished. It is.
  • one surface of the first semiconductor wafer 5 and the second semiconductor wafer 6 is mirror-polished, and at least one of the first semiconductor wafer 5 and the second semiconductor wafer 6,
  • a groove forming step is performed on the polished surface of the first semiconductor wafer 5 by an exposure apparatus to form a groove 7.
  • the substrate is washed with a solution containing one or two of hydrogen peroxide, ozone or nitric acid, and a thin oxide film 4 of about 2 nm is formed on the surfaces of the first semiconductor wafer 5 and the second semiconductor wafer 6. Form and become hydrophilic.
  • the mirror polishing may be performed on both surfaces of the first semiconductor wafer 5 and the second semiconductor wafer 6.
  • the semiconductor wafer 6 is subjected to the water repellency treatment by the same treatment as in the first specific example.
  • the surface of the semiconductor wafer 5 where the grooves are formed and the polished surface of the semiconductor wafer 6 are in close contact with each other, and heat treatment is performed.
  • the unbonded portions around the semiconductor wafer 5 are ground and removed by etching, and then the back surface of the semiconductor wafer 5 is ground.
  • the bonded semiconductor substrate 8 is formed by performing the polishing process.
  • At least one of the semiconductor wafers to be bonded is / JP97 / 01444
  • the present invention is applied to the manufacture of semiconductor substrates for various large power and high withstand voltage semiconductor devices, SOI (semiconductor on insulator) and the like.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un procédé d'assemblage de substrat en semi-conducteur au silicium qui consiste à coller des plaquettes en semi-conducteur (2), (5) et (9) ayant des surfaces à fini spéculaire à des secondes plaquettes en semi-conducteur (3, 6 et 10), les surfaces des premières ou des deuxièmes plaquettes en semi-conducteur étant rendues hydrophiles alors que les surfaces des autres plaquettes en semi-conducteur sont rendues hydrophobes. Le procédé consiste ensuite à coller les surfaces principales traitées des premières et secondes plaquettes les unes aux autres et à les traiter thermiquement, ce qui limite l'apparition de vides et la contamination des interface de liaison.
PCT/JP1997/001444 1996-04-26 1997-04-24 Procede d'assemblage de substrat en semi-conducteur au silicium WO1997041590A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19780446T DE19780446T1 (de) 1996-04-26 1997-04-24 Bindungsverfahren für eine Silizium-Halbleiterplatte

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10815396 1996-04-26
JP8/108153 1996-04-26

Publications (1)

Publication Number Publication Date
WO1997041590A1 true WO1997041590A1 (fr) 1997-11-06

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PCT/JP1997/001444 WO1997041590A1 (fr) 1996-04-26 1997-04-24 Procede d'assemblage de substrat en semi-conducteur au silicium

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DE (1) DE19780446T1 (fr)
WO (1) WO1997041590A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227207A (ja) * 2007-03-14 2008-09-25 Sumco Corp 貼り合わせウェーハの製造方法
JP2008288563A (ja) * 2007-04-20 2008-11-27 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
JP2012517096A (ja) * 2010-04-20 2012-07-26 パナソニック株式会社 薄膜を基板に接合する方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0484431A (ja) * 1990-07-27 1992-03-17 Shin Etsu Handotai Co Ltd ウェーハの保管方法
JPH0582404A (ja) * 1991-09-19 1993-04-02 Nippondenso Co Ltd シリコン基板の接合方法
JPH07245382A (ja) * 1994-03-07 1995-09-19 Fuji Electric Co Ltd 複合素子および貼り合わせ基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0484431A (ja) * 1990-07-27 1992-03-17 Shin Etsu Handotai Co Ltd ウェーハの保管方法
JPH0582404A (ja) * 1991-09-19 1993-04-02 Nippondenso Co Ltd シリコン基板の接合方法
JPH07245382A (ja) * 1994-03-07 1995-09-19 Fuji Electric Co Ltd 複合素子および貼り合わせ基板の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227207A (ja) * 2007-03-14 2008-09-25 Sumco Corp 貼り合わせウェーハの製造方法
US8802540B2 (en) 2007-03-14 2014-08-12 Sumco Corporation Method of manufacturing bonded wafer
JP2008288563A (ja) * 2007-04-20 2008-11-27 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
JP2012517096A (ja) * 2010-04-20 2012-07-26 パナソニック株式会社 薄膜を基板に接合する方法
US8278133B2 (en) 2010-04-20 2012-10-02 Panasonic Corporation Method for joining a film onto a substrate

Also Published As

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