TWI476518B - Sense of radiation linear resin composition - Google Patents

Sense of radiation linear resin composition Download PDF

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Publication number
TWI476518B
TWI476518B TW101134451A TW101134451A TWI476518B TW I476518 B TWI476518 B TW I476518B TW 101134451 A TW101134451 A TW 101134451A TW 101134451 A TW101134451 A TW 101134451A TW I476518 B TWI476518 B TW I476518B
Authority
TW
Taiwan
Prior art keywords
group
carbon atoms
pattern
general formula
linear
Prior art date
Application number
TW101134451A
Other languages
English (en)
Chinese (zh)
Other versions
TW201300943A (zh
Inventor
中村敦
下川努
高橋純一
安陪毅由
永井智樹
柿澤友洋
Original Assignee
Jsr股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr股份有限公司 filed Critical Jsr股份有限公司
Publication of TW201300943A publication Critical patent/TW201300943A/zh
Application granted granted Critical
Publication of TWI476518B publication Critical patent/TWI476518B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H10P76/204—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW101134451A 2007-05-23 2008-05-23 Sense of radiation linear resin composition TWI476518B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007136669 2007-05-23
JP2007246847 2007-09-25

Publications (2)

Publication Number Publication Date
TW201300943A TW201300943A (zh) 2013-01-01
TWI476518B true TWI476518B (zh) 2015-03-11

Family

ID=40031995

Family Applications (2)

Application Number Title Priority Date Filing Date
TW101134451A TWI476518B (zh) 2007-05-23 2008-05-23 Sense of radiation linear resin composition
TW097119264A TW200905399A (en) 2007-05-23 2008-05-23 Method for forming pattern and resin composition using therefor

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW097119264A TW200905399A (en) 2007-05-23 2008-05-23 Method for forming pattern and resin composition using therefor

Country Status (5)

Country Link
US (3) US8211624B2 (enExample)
JP (3) JPWO2008143301A1 (enExample)
KR (3) KR101597366B1 (enExample)
TW (2) TWI476518B (enExample)
WO (1) WO2008143301A1 (enExample)

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TWI452444B (zh) 2008-07-14 2014-09-11 Jsr股份有限公司 光阻圖型不溶化樹脂組成物及使用其之光阻圖型形成方法
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JP2010271686A (ja) * 2009-04-24 2010-12-02 Jsr Corp 感放射線性樹脂組成物
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TWI420571B (zh) * 2009-06-26 2013-12-21 羅門哈斯電子材料有限公司 形成電子裝置的方法
JP5698923B2 (ja) * 2009-06-26 2015-04-08 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 自己整合型スペーサー多重パターニング方法
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CN104698745B (zh) * 2015-02-11 2019-04-12 广州中国科学院先进技术研究所 一种尺寸可控制的纳米块制作方法
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Also Published As

Publication number Publication date
KR20140095541A (ko) 2014-08-01
TW201300943A (zh) 2013-01-01
KR20120032024A (ko) 2012-04-04
US20140363773A1 (en) 2014-12-11
KR101597366B1 (ko) 2016-02-24
TW200905399A (en) 2009-02-01
JP2012108529A (ja) 2012-06-07
US20120156621A1 (en) 2012-06-21
JP2015062072A (ja) 2015-04-02
WO2008143301A1 (ja) 2008-11-27
US20100190104A1 (en) 2010-07-29
US8211624B2 (en) 2012-07-03
JPWO2008143301A1 (ja) 2010-08-12
KR20100017727A (ko) 2010-02-16

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