TWI470783B - 奈米結構發光二極體 - Google Patents

奈米結構發光二極體 Download PDF

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TWI470783B
TWI470783B TW99133891A TW99133891A TWI470783B TW I470783 B TWI470783 B TW I470783B TW 99133891 A TW99133891 A TW 99133891A TW 99133891 A TW99133891 A TW 99133891A TW I470783 B TWI470783 B TW I470783B
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nanowire
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Munib Wober
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Zena Technologies Inc
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Description

奈米結構發光二極體
2008年7月3日公佈的PCT國際公開案WO 2008/079076顯示奈米配線可用於構建發光二極體(LED)。奈米結構LED非常高效地產生光。其等提供寬範圍之材料選擇，藉此允許使用寬範圍之波長，包含紅光、綠光及藍光。然而，眾所周知，PIN接面LED具有隨溫度變化之光輸出及波長。因此，即便已知一LED電視(TV)之概念，到目前為止針對TV之LED之實務應用仍不可行。
在下文詳細描述中，參考形成本文之一部分之隨附圖式。在圖式中，類似符號通常表示類似組件，除非上下文中另有規定。詳細描述、圖式及申請專利範圍中所描述的闡釋性實施例並不意味著限制。可使用其他實施例，且可在不脫離本文所提出之標的物之精神或範圍的情況下進行其他變更。
術語奈米配線(nanowire)指的是具有數奈米之量級、舉例而言100奈米或更小之一厚度或直徑及無限制之長度之一結構。一主動式奈米配線通常能夠將光子轉化為激子。奈米配線可展現1000或更大之縱橫比(長寬比)。如此，可將它們稱作一維材料。奈米配線可具有塊狀或3D材料不具備的許多有趣性質。這是因為奈米配線中的電子可為側向受限的之量子且因此佔據與塊狀材料中所發現的傳統連續範圍之能階或能帶不同之能階。因此，奈米配線可具有電傳導性及光傳導性之不連續值。奈米配線可包含金屬材料(例如，Ni、Pt、Au)、半導體材料(例如，Si、InP、GaN等)及絕緣材料(例如，SiO2 、TiO2 )。分子奈米配線係由重複的有機或無機分子單元所構成。奈米配線的實例包含無機分子奈米配線(Mo6 S9-x Ix 、Li2 Mo6 Se6 )，其可具有0.9 nm之一直徑且可為數百微米長。其他實例係基於半導體(諸如InP、Si、GaN等)、介電質(例如，SiO2 、TiO2 )或金屬(例如，Ni、Pt)。一主動式-畫素感測器(APS)，通常亦寫作主動式畫素感測器，係由含有一畫素感測器陣列之一積體電路所組成，各畫素含有一光電偵測器及一主動式放大器。一被動式畫素感測器為無自帶放大器之一畫素感測器。
術語激子指的是電子電洞對。
一主動式元件為具有電控制電子及/或電動流能力(電控制電或光，或反之亦然)之任何類型之電路組件。無法藉由另一電信號而控制電流之組件稱作被動式元件。電阻器、電容器、電感器、變壓器及甚至二極體皆被視作被動式元件。在本文所揭示之實施例中，主動式元件包含但不限於一主動式奈米配線、一主動式波導、電晶體、矽控制整流器(SCR)、發光二極體及光電二極體。
一波導係設計用於在藉由其物理邊界而決定之一方向上限制並引導所選擇之波長之電磁輻射之一系統或材料。所選擇之波長較佳為波導之直徑之一函數。一主動式波導為具有電控制電子及/或電洞流(電控制電或光，或反之亦然)之能力之一波導。舉例而言，主動式波導之此能力係為何可將主動式波導視為「主動」且在一主動元件類屬範圍內之一原因。
一光導管係用於限制及傳輸電磁輻射之一元件。光導管可包含一核心及一包覆。核心可為一奈米配線。光導管可經組態以透過核心及包覆按一所選擇之波長分離一電磁輻射光束之波長，其中核心係經組態以作為用於傳輸高至所選擇之波長之波長之一通道及用於偵測透過核心傳輸之波長中高至所選擇之波長之波長一主動式元件。一核心及一包覆通常為光導管之互補組件且係經組態以按一經選擇之波長以透過該核心及包覆分離一電磁輻射光束之波長。
一光閘極係在一光電子裝置中所使用之一閘極。通常，光閘極包括一金屬氧化物半導體(MOS)結構。光閘極在光電二極體積累期間控制光子所產生之電荷之累積並在積累結束時控制電荷之轉移。一光電二極體包括一pn接面，但是可將一光閘極放置在任何類型之半導體材料上。一垂直光閘極為一新結構。通常，光閘極係水平放置在平坦的光電二極體裝置上。然而，在一奈米配線裝置中，光閘極可在一垂直方向上形成。即光閘極可定向為直立覆蓋奈米配線之側表面。
一轉移閘極係一畫素中所使用之一開關電晶體之一閘極。轉移閘極的作用係將電荷從一裝置之一側轉移到另一側。在一些實施例中，轉移閘極係用於將電荷從光電二極體轉移到感測節點(或浮動擴散區)。
一重設閘極係用於重設一裝置之一閘極。在一些實施例中，重設閘極係由一n+區所形成之感測節點。重設指的是恢復至藉由一特定電壓而設定之原始電壓位準。在一些實施例中，重設汲極(RD)之電壓係用作一重設位準之電壓。重設指的是通常以受控形式清除任何待處理的錯誤或事件並使一系統回到正常情況或初始狀態。重設通常係在無法或不想要繼續一處理活動時回應於一錯誤情況或事件之完成而進行。一電子裝置能夠在發生錯誤、異常功率損耗或事件完成的情況下自行重設之能力可作為嵌入式系統設計及程式化之一態樣。
一本徵半導體(亦稱作一未摻雜半導體或i型半導體)係無任何明顯摻雜劑物種存在之一純淨半導體。因此電荷載子的數量係藉由材料本身的性質決定而非雜質量。在本徵半導體中，被激發的電子之數量與電洞之數量相等：n=p。本徵半導體之傳導性可歸因於晶體缺陷或熱激發。在一本徵半導體中，傳導帶中的電子數量等於價帶中的電洞數量。
一SOC(單晶片系統)係一單個積體電路，即一單個整塊基板上之一處理器、一匯流排及/或其他元件。一單晶片系統可包含一可組態邏輯單元。可組態邏輯單元可包含同一基板上之一處理器、介面及一可程式化邏輯。一單晶片系統IC可包含多種可再使用功能塊，諸如微處理器、介面、記憶體陣列及DSP(數位信號處理器)。此等預設計之功能塊通常稱作核心。通常，SOC可包含一單個晶片中之複數個核心。嵌入在SOC中的核心在組合入一晶片前可個別進行設計及檢測。SOC與用不連續組件形成在板上之電子系統相比具有明顯的優點。具有一SOC之一積體電路通常比一基於電路板之系統小得多。SOC所賦予的尺寸縮小亦可使功率消耗及裝置速度得到改良。SOC可在一單片矽上將固定及可程式化之智慧財產權核心與傳統邏輯及記憶體透過一匯流排連接而組合，藉此大大降低其總成本。
一晶片係一種嵌入一積體電路之半導體材料(通常為矽)。一典型晶片可含有數百萬個電子組件(電晶體)。存在不同類型之晶片。舉例而言，CPU晶片(亦稱作微處理器)含有一整個處理單元，而記憶體晶片含有空白記憶體。
一積體電路(亦稱作IC、微晶片、矽晶片、電腦晶片或晶片)係可包含許多電子組件(電晶體、電容器、電阻器、二極體及其他電路組件)之一裝置。此等組件通常互連以形成IC上之多個電路組件(例如，閘極、電池、記憶體單元、演算單元、控制器、解碼器等)。一積體電路之一實例係一電腦中之一中央處理單元(CPU)。一積體電路可實施執行積體電路之各種功能之一或多個核心以及用於與該積體電路外部之其他積體電路及裝置通信之電路。積體電路通常包括一半導體基板，該半導體基板上已形成數個組件層以產生大量側向分佈之電晶體及其他電路裝置。額外之連接層可形成在組件層之頂部以提供電路裝置之間之互連並向其提供電力，及提供輸入及輸出信號連接至該等裝置。通常利用矽或其他半導體材料之一晶片(亦稱作一晶粒)製作一積體電路。晶粒由一半導體材料(諸如矽或鍺)所構成之一基板組成。基板之一側可具有構成積體電路之複數個電路結構且另一側可保留為相對裸露之基板材料，該相對裸露之基板材料通常經由一研磨步驟而平坦化。一晶粒通常係安裝在一封裝中，且電連接至該封裝之引線。一混合式積體電路係結合至一基板或電路板之由個別半導體裝置以及被動式組件所構成之一微型化電子電路。積體電路可歸類為類比積體電路、數位積體電路及混合信號積體電路(同一晶片上之類比及數位積體電路)。
一數位信號處理器(DSP)係專門設計以通常在即時計算中用於數位信號處理諸如視訊信號處理之一專用微處理器。數位信號處理演算法通常需要快速地對一組資料進行大量的數學運算。藉由數位操控將信號從類比轉化為數位，且隨後再轉化為類比形式。
一PN接面係藉由將p型及n型半導體非常接近地組合在一起而形成之一接面。一PN接面係藉由在一p型半導體區與一n型半導體區之間組合一輕度摻雜之「近」本徵半導體區而形成之一接面。由於p型及n型區係用作歐姆接點，故通常進行重度摻雜。
術語接面指的是兩個半導體區相接之區域。可將其視為p型區塊與n型區塊之間之邊界區域。
一實施例係關於一種具有一光學回饋之奈米結構LED，其包括一基板、從該基板之一第一側伸出之一奈米配線、用於產生光之一主動區、一光學感測器及一電子電路，其中該光學感測器係經組態以偵測在該主動區中所產生之光之至少一第一部分，且該電子電路係經組態以控制控制該主動區之一光輸出之一電參數。在一實例實施方案中，該奈米結構LED可進一步包括磊晶連接至該奈米配線之一體積元件。該體積元件通常可在該奈米配線內或接近該奈米配線為了主動區之形成而提供高摻雜程度，該奈米配線本身須或無須摻雜。無光學回饋之奈米結構LED較佳可為該基板、該奈米配線及一體積元件之組合，其中該奈米配線之一部分及該體積元件之一部分係經組態以形成該主動區。該體積元件可為一圓柱形燈泡，但不限於具有圓頂狀頂部之一圓柱形燈泡，其亦可為一球形/橢球形及金字塔形。該體積元件可三維延伸；可具有大體積及大表面。該體積元件/奈米配線架構提高一LED之電性能及光性能。藉由在該奈米配線及該體積元件中使用不同材料組成，可選擇導入該體積元件中的奈米配線材料組合物以減少由與該奈米配線的連接所造成之光學干擾。
一實施例之奈米結構LED可包含可產生一主動區以在使用期間在結構內產生光之一PN或PIN接面。奈米配線、奈米配線之一部分或與奈米配線相連接之一結構可形成一波導，該波導在一給定方向上引導該主動區中所產生之光之至少一部分。
奈米配線及體積元件可嵌入如SiO2 之一低折射率材料中。在一可行實施方案中，低折射率區(例如，一覆蓋層)繼而係藉由一金屬圓柱形環而圍封以提供各LED與其鄰近LED之光隔離。此金屬環亦可協助局部去除各LED所產生之熱。
一奈米結構LED使使用該LED所產生之光之非常大分率成為可能。這至少部分藉由被用作一波導之奈米配線而達成，該波導將接面中所產生的光引導出表面。
將奈米配線用作波導提供在精確界定的方向上引導光之可能性。藉由使用來自光纖領域之概念，可取決於預期用途使光束聚焦，或發散。在此情況中，奈米配線上之一凹表面及圍繞它的矽石有助於提供適用於一顯示系統之一聚焦光束。
奈米配線技術提供選擇在習知塊狀層技術中不可行之材料及材料組合之可能性。這可用於奈米結構LED以提供產生習知技術無法達到之波長區之光之LED，舉例而言紫光及UV光。
奈米結構LED使奈米配線內可包含異質結構以及不同摻雜區域，藉此促進電特性及/或光特性之最佳化。
本文中需要精確控制一LED之光輸出或配置在二維柵格中用於顯示之目的之多個LED之均勻度之實施例中，高度需要一光學回饋迴路以產生光發射之均勻度。此一回饋迴路可包含用於即時量測LED之光輸出之一分率之一光學感測器及用於使用量測值以調整LED之運作點之一電子電路。
一實施例可包含已具有一嵌入光電二極體諸如釘紮光電二極體之一基板上所生長之一奈米結構LED。來自該奈米結構LED之光係部分傳輸至該基板，其中一光電二極體量測並提供與該LED所產生之光之強度成比例之一信號。此信號接著用於一回饋迴路中以控制該LED之偏壓點使得一穩定光輸出維持在所要強度。
具有光學回饋之含有奈米配線之LED(NWLOF)可進一步包括基板上圍繞奈米配線及/或在奈米配線內之一部分反射層，其中該部分反射層係經組態以使得光之一第一部分可透過該部分反射層傳輸至光學感測器且使得光之至少一第二部分可從該部分反射層之一表面反射。
該NWLOF可進一步包括圍繞奈米配線之一或多個包覆層，其中該一或多個包覆層係經組態使得奈米配線係經組態以形成一波導。該NWLOF可進一步包括圍繞奈米配線具有較低折射率之一低折射率材料及圍繞該低折射率材料之一金屬層。
該NWLOF可進一步包括一體積元件，其中奈米配線之一部分及該體積元件之一部分係經組態以形成主動區。
圖1提供此概念之一實例實施方案。LED可由其所生長之基板中之p區、由上述適當材料之任一者所製成之本徵奈米配線及圍繞且接觸奈米配線之一n型磊晶區所構成。一光電二極體係嵌入奈米配線所生長之基板中。一釘紮光電二極體之一實例係繪示在圖2中。
在本文之實施例中，存在光電二極體及奈米結構LED之多種可行實施方案。圖1係一實例實施方案。另一可行的實施方案(圖1中未繪示)將LED放置在含有光電二極體之基板之背側。這要求使基板變薄致使可藉由光電二極體之勢阱(圖1中之n+區)容易地收集來自LED之光子。
根據實施例之一奈米結構LED包括一直立奈米配線。針對此申請案之目的，一直立奈米配線應解釋為以某一角度從基板伸出之一奈米配線，舉例而言，該直立奈米配線從係基板生長出來，較佳為汽液固(VLS)生長之奈米配線。與基板之角度通常為基板及奈米配線中之材料、基板之表面及生長條件之結果。藉由控制此等參數，有可能產生僅指向一方向(舉例而言垂直方向)或有限組之方向之奈米配線。舉例而言，由來自元素週期表III、V及IV欄之元素所構成之閃鋅礦及鑽石半導體奈米配線及基板，此等奈米配線可生長在[111]方向且隨後生長在任何{111}基板表面之垂直方向。給定為介於垂直於表面與奈米配線之軸方向之間之角度之其他方向包含70,53°{111}、54,73°{100}及35,27°及90°(兩者皆至{110})。因此，奈米配線界定一方向或有限組之方向。
根據實施例，奈米配線或由奈米配線形成之結構之一部分可用作在直立奈米配線所給定的方向上引導及限制在奈米結構LED中產生、從奈米結構LED產生或由奈米結構LED離開之光之至少一部分之一波導。波導奈米結構LED結構可包含具有一或多個圍繞包覆之一高折射率奈米配線，該一或多個圍繞包覆具有低於核心之折射率。結構可為圓形對稱或接近圓形對稱。在光纖應用中，圓形對稱結構之光波導係眾所周知且可參照摻雜稀土之光纖裝置領域。但是，一不同在於光纖放大器經光學泵抽以提高透過該光纖放大器引導之光，同時所述之奈米結構LED可視為一高效的光電轉換器且反之亦然。
光學感測器之一輸出較佳為至電子電路之一輸入。電參數較佳包括電壓或電流。電子電路較佳係經組態以控制電壓或電流使得光輸出維持實質恆定，而不論主動區之運作溫度範圍內之該主動區一溫度。光學感測器較佳包括具有實質不受主動區之一運作溫度範圍中之一溫度影響之一性能特點之一pn或p-i-n光電二極體。主動區中所產生之光之至少一部分較佳係在奈米配線所給定之一方向上引導。奈米配線較佳係經組態以產生光及形成一波導。
體積元件較佳包括經組態以提供一p或n區之一摻雜層及一阱層。光學感測器較佳包括基板中之一釘紮光電二極體。一或多個包覆層較佳係經組態以提供一分級折射率使得奈米配線之一折射率高於一或更多包覆層。NWLOF較佳包括複數個奈米配線，該複數個奈米配線包括發射不同波長範圍之光之不同材料。NWLOF較佳包括複數個奈米配線，該複數個奈米配線包括形成用於不同波長範圍之光之波導之不同直徑。NWLOF較佳包括複數個奈米配線，該複數個奈米配線包括發射不同波長範圍之光之不同材料且NWLOF包括複數個奈米配線，該複數個奈米配線包括形成用於不同波長範圍之光之波導之不同直徑。奈米配線及體積元件較佳係經配置以透過奈米配線及基板引導光使得光從相對於第一側之基板之一第二側發射。基板較佳含有光耦合至奈米配線之一光電二極體。體積元件較佳係經組態以藉由在介於奈米配線與體積元件之間之一接面處的分散而散佈光。電子電路較佳包括經組態以校正電參數之一控制器。該控制器較佳包括記憶體，該記憶體包括用於控制電參數之值使得光輸出係藉由該記憶體中所儲存之值而設定。該控制器較佳包括記憶體，其中該控制器係經組態以基於該記憶體中所儲存之光輸出之目標值而校正電參數以使光輸出更接近地匹配一目標輸出。目標值較佳代表不同色彩之光的電流值。目標值較佳代表目標亮度位準。
可以不同方式改良奈米配線之波導性質。奈米配線具有一第一有效折射率nw ，且圍繞奈米配線之至少一部分之一包覆可具有一第二有效折射率nc ，且藉由確保第一折射率高於第二折射率nw >nc ,，可提供良好的波導性質至奈米配線。可進一步藉由引入一光學活性包覆而改良波導性質。
舉例而言，奈米配線中之高折射率材料可為具有約2.0之折射率之氮化矽。舉例而言，較低折射率包覆層材料可為具有約1.5之折射率之玻璃(舉例而言，選自表I之材料)。
在表I中，PESiN指的是電漿增強型Si3 N4 且PESiO指的是電漿增強型SiO2 。
對於以從可見至IR之不同波長運作及深微米波長之一LED而言，可使用多種材料，諸如：(尤其是)Si、GaAs(p)、InAs、Ge、ZnO、InN、GaInN、GaN AlGaInN、InP、InAsP、GaInP、InGaP:Si、InGaP:Zn、GaInAs、AlInP、GaAlInP、GaAlInAsP、GaInSb、InSb。為了產生CMOS電路，Si及摻雜Si之材料較佳。在一實施例中，當與具有從1.4至2.3之範圍中之折射率之玻璃型包覆材料(諸如SiO2 或Si3 N4 )組合時，III-V半導體奈米配線材料之折射率之典型值係在從2.5至5.5之範圍中，滿足波導要求nw >nc 。
光擷取之最佳化之一考慮係使數值孔徑(NA)沿著奈米配線結構變化以使來自結構之光擷取最佳化。一般而言，當在距離出口位置最遠之處產生光時使NA最高係最理想。這將使經擷取且朝向出口引導之光最大化。相比之下，在更靠近結構之出口端之處，可使NA變小，因為所產生之光將在隨機方向上輻射且所輻射之光之大多數將射中結構之頂部部分之頂部及側面並離開。在結構之頂部部分具有較低NA亦使光擷取及透過結構向下往回之光引導最小化，該結構可能不理想，除非在結構之底部插入一反射器。可藉由用具有稍小折射率之不同組合物之另一III-V包覆圍繞III-V奈米配線核心而獲取一低NA。
根據實施例之一奈米結構LED可包括一基板及以經界定之角度θ從該基板磊晶生長之一奈米配線。該奈米配線之一部分係藉由一體積元件而圍封。該體積元件較佳係磊晶連接至該奈米配線。該奈米配線之一部分或所有可經配置以作為在藉由該奈米配線之長形方向所給定之一方向上引導照射光之至少一部分之一波導部分且將被稱作一波導。該奈米配線可具有50 nm至500 nm之量級之一直徑。該奈米配線之長度可為1 μm至10 μm之量級。pn接面產生配置在該奈米配線中之一主動區。
選擇奈米結構LED之不同部件之材料使得奈米配線可相對於圍繞材料具有良好的波導性質，即奈米配線中之材料之折射率較佳應大於圍繞材料之折射率。
若奈米配線具有一第一折射率nw ；波導部分中圍繞奈米配線之材料(通常為一覆蓋層)具有一第二折射率nc 且一體積元件具有一第三折射率nve ，則nw >nc 且nw >nve 。奈米結構LED之典型值為nw ~4，nc ~1.5及nve ~3。
此外，奈米配線可具有一或多個層。可引入一第一層以改良奈米配線之表面性質(即，減少電荷洩漏)。具體而言，可以類似于光纖領域中公認方式之方式引入其他層(舉例而言一光學層)以改良奈米配線之波導性質。該光學層通常具有介於奈米配線之折射率與周圍包覆區域材料之折射率之間之一折射率。或者，中間層可具有一分級折射率，已證實其在特定情況中改良光傳輸。若使用一光學層，則奈米配線之折射率nw 應界定奈米配線與層兩者之一有效折射率。
生長具有經精確界定之直徑之奈米配線之能力可為使與奈米結構LED中所限制之光之波長相關之奈米配線之波導性質最佳化。可選擇奈米配線之直徑以有利地與所要光之波長保持一致。奈米配線之尺寸較佳使針對所產生之光之特定波長而最佳化之一均勻光學腔可沿著奈米配線提供。奈米配線通常足夠寬以擷取所要之光。經驗法則為直徑必須大於λ/2nw ，其中λ為所要光之波長且nw 為奈米配線之折射率。作為一實例，在一矽奈米配線中，約60 nm之一直徑僅適合限制藍光且80 nm之直徑適合限制藍光及綠光兩者。
在紅外光及近紅外光中，大於100 nm之一直徑係足夠。奈米配線之直徑之一大致較佳上限係藉由生長限制而給定且可為500 nm之量級。奈米配線之長度通常且較佳為1 μm至10 μm之量級，為主動區提供足夠體積。
在一實施例中，一反射層可提供在基板上且在配線下方延伸。該反射層較佳以一多層結構形式(舉例而言該多層結構包括重複的矽酸鹽層)提供或提供為一金屬膜。
在奈米配線之下端取得反射之一替代方法為在奈米配線下方之基板中配置一反射層。另一替代為在波導內引入反射構件。此反射構件可為奈米配線之生長製程期間提供之一多層結構，舉例而言該多層結構包括SiNx /SiOx (介電質)或GaAs/AlGaAs(半導體)之重複層。具有受控厚度之此等重複層亦可作為光柵過濾器以精確地控制LED之輸出波長以類比波長隨(舉例而言)溫度之漂移。
在一進一步實施例中，所產生之光之一大部分係藉由奈米配線之波導在向下方向上引導而穿過基板。可將光引導穿過基板之整個厚度或或者基板在奈米配線之底部下方可具有一切口以縮小基板之厚度並藉此減少基板中光之散射或吸收。基板較佳由透明材料製成。體積元件之一部分或較佳體積元件之整個外表面可藉由一反射層覆蓋，該反射層增強穿過波導之所產生之光之輻射。舉例而言由金屬形成之反射層可額外作為一接點。舉例而言，奈米配線及基板之部分視需要可藉由一SiC或SiN保護層覆蓋。
在一實施例中，體積元件可配置為一分散元件，提供在一寬角度範圍內實質均勻分佈之一光輻射。此裝置非常適合其中需要均勻照明之照明之目的。主動區可配置在奈米配線中但是或者可配置在體積元件內及奈米配線上端之上方或從奈米配線朝外放射地配置且可能配置在奈米配線上方。奈米配線下端較佳應具有反射構件之一些(舉例而言奈米配線內之一反射材料)以向上重新引導光。體積元件之幾何形可經設計以進一步分散光。在介於奈米配線波導與體積元件之間之接面上且進一步在藉由體積元件之上邊界所形成之邊緣上提供分散。可選擇體積元件之高度及寬度使得邊緣進一步分散光。可將一實施例最佳化以提供一集中且在方向上定向之光束。直徑相對較長(較佳長於150 nm)之奈米配線可延伸至體積元件之上表面。奈米配線可具有如上端上之出口表面之一凹透鏡。
作為波導之奈米配線可用於改良習知平坦LED之性能。在一實施例中，可將複數個奈米配線配置在一平坦LED之表面上。光係在主動區中產生，該主動區可為平坦LED之一主動層(舉例而言GaAsP)。奈米配線可磊晶連接至平坦LED層之頂部以獲得不同部分之良好匹配。可藉由保護奈米配線且/或改良性能之一包覆層(舉例而言Si3 N4 )塗佈奈米配線。介於奈米配線之間之表面較佳可塗佈一反射層(舉例而言Au)。主動區中所產生之光之至少一部分可進入作為波導並將光引離基板平面之奈米配線。
取決於奈米結構LED之預期用途、適當生產製程之可用性及材料成本等，可將寬範圍之材料用作結構之不同部分。LED之適當材料須基於系統所發射/偵測之光之波長而與光電二極體之適當材料相匹配。LED及光電二極體兩者應按預期在系統經配置以運作之光波長範圍內運行。
此外，基於奈米配線之技術使原本無法組合之無缺陷材料組合成為可能。III-V半導體因其促成高速度及低功率電子器件而尤為引人關注。基板之適當材料包含但不限於：Si、GaAs、GaP、GaP:Zn、InAs、InP、GaN、Al2 O3 、SiC、Ge、GaSb、ZnO、InSb、SOI(絕緣體上矽)、CdS、ZnSe、CdTe。在現有發明(即用於生成可見光顯示結構)之情況中，一Si基板係較佳，因其在LED下方嵌入一CMOS光電二極體。對於介於藍光及近紅外光之間之波長，可在光電二極體中使用Si。對於Si所偵測之光範圍外之波長，諸如IR光或UV光，可在800 nm至1500 nm之範圍中，例如850 nm之LED之光電二極體中使用GaAs；並在1310 nm至1550 nm之範圍中使用InGaAs/InP。
奈米配線之適當材料包含但不限於：Si、GaAs(p)、InAs、Ge、ZnO、InN、GaInN、GaN AlGaInN、BN、InP、InAsP、GaInP、InGaP:Si、InGaP:Zn、GaInAs、AlInP、GaAlInP、GaAlInAsP、GaInSb、InSb。針對此申請案，可從上述列表及下文表1中仔細選出奈米配線材料以產生紅光、綠光及藍光。
可從下列等式中獲得波長與能帶隙能量之間之關係：
其中E為能量，ν為頻率，λ為光子波長，h為普朗克常數及c為光速。為快速計算，將等式簡化為
具有532 nm之波長(綠光)之光子流可具有大約2.33 eV之能量。類似地，1 ev對應於波長1240 nm之一紅外光子流及等等。
1 eV=8065.5447 cm-1
舉例而言，可行的施體摻雜物包含GaP、Te、Se、S等且同一材料之受體摻雜物為Zn、Fe、Mg、Be、Cd等。應注意奈米配線技術使使用諸如SiN、GaN、InN及AlN之氮化物成為可能，其促進偵測在習知技術不易達到之波長區中之光之LED之製造。特別受到商業關注之其他組合包含但不限於GaAs、GaInP、GaAlInP、GaP系統。典型摻雜位準之範圍從1×1018 cm-3 至1×1020 cm-3 。
低電阻接觸材料之合適性係取決於其待沈積處之材料，但是可使用金屬、金屬合金、以及非金屬化合物，如：Al、Al-Si、TiSi2 、TiN、W、MoSi2 、PtSi、CoSi2 、WSi2 、In、AuGa、AuSb、AuGe、PdGe、Ti/Pt/Au、Ti/Al/Ti/Au、Pd/Au、ITO(InSnO)等及例如金屬及ITO之組合。
基板可為裝置之一整合部分，因為其亦含有偵測未限制於奈米配線中之光所需之光電二極體。對於本申請案，基板此外亦含有用於控制LED之偏壓、放大及讀出之標準CMOS電路以及被視為必要及有用之任何其他CMOS電路。基板包含其中具有主動式裝置之基板。基板之適當材料包含矽及含矽材料。通常，實施例之各感測器元件包含一奈米結構LED結構，該奈米結構LED結構包括一奈米配線、圍封該奈米配線之至少一部分之一包覆、一耦合器及兩個接點。類似地，對於更高波長之光，可結合針對該等波長之合適發光材料使用GaAs電路。
在一實施例中，舉例而言，如圖1所示，一微透鏡可定位在LED上。該微透鏡可包括目前技術已知的數種光學透明透鏡材料之任一者。非限制性實例包含光學透明無機材料、光學透明有機材料及光學透明複合材料。最常見為光學透明有機材料。通常，透鏡層可伴隨具有比彩色濾光鏡層系列(若有)或圖案化平坦化層低之玻璃轉化溫度之一有機聚合物材料之圖案化及回流而形成。聚合材料較佳應具有相對於溫度變化之高度穩定性以作為LED之微透鏡，因為此裝置須在高溫下執行。圖1之微透鏡無需一種新的材料；簡單地將包覆材料圖案化為正確的形狀即可形成微透鏡。
一種製造奈米結構LED之方法係首先生長一奈米配線。隨後可將該奈米配線之部分遮蔽且可選擇性地生長體積元件。體積元件軸向及徑向生長，因此當奈米配線被部分遮蔽時，奈米配線被圍封在體積元件中。合適的遮蔽材料為例如氮化矽、氧化矽等。
考慮藉由一物質(如VLS生長之奈米配線)局部增強奈米配線生長之系統，藉由變更生長條件而在徑向生長與軸向生長之間變更之能力使程序(奈米配線生長、遮罩形成及隨後的選擇性生長)成為可能且可重複以形成更高量級之奈米配線/3D序列。對於未藉由個別生長條件而區分之奈米配線生長及選擇性生長之系統，首先沿著長度生長奈米配線並藉由不同選擇性生長步驟生長不同類型之3D區域或體積元件可能更佳。
根據本發明，為了製造具有由GaAs及InGaP所形成之(諸)主動式奈米配線區之一發光pn二極體/陣列，包括下列步驟：基板較佳地可為含有光電二極體之Si。隨後，舉例而言，為了生長一GaAs奈米配線，可在矽基板上放置一p+GaP磊晶層。
1.藉由微影術在一p+GaP基板上界定局部的催化劑/諸催化劑。
2.從局部催化劑中生長GaAs奈米配線。針對催化配線生長調整生長參數。
3.圍繞奈米配線徑向生長薄的InGaP同心層(包覆層)。
4.將SiO2 沈積為遮罩材料。
5.回蝕遮罩以開放奈米配線之上部部分。
6.選擇性生長n+InGaP體積元件。調整生長參數以提供徑向生長。
7.在體積元件上形成接點並形成至基板之接點。
在本文之實施例中，矽奈米配線(NW)可生長在一矽層上。該製程可應用於在介電質層上生長Si NW，或應用於生長在合適基板(包含具有或不具有一薄的鉬層之Si基板)上之III-V化合物。
本文所揭示之實施例之矽奈米配線可按如下方式製作。提供一基板，該基板包括具有二氧化矽表面之矽。可使用表面處理將該表面改質以移除一個氧化物層以促進金奈米顆粒或金合金奈米顆粒如AuGa之吸附。在此經改質表面上，一Si基板較佳具有{111}平面(Au係用於在引入SiH4時形成Si-Au共晶點並生長Si奈米配線)，可藉由沈積一金層而形成金奈米顆粒，之後移除除金奈米顆粒之所要位置之外的區段上方之金層。舉例而言，可藉由電漿增強型汽液固生長而生長矽奈米配線。在第一步驟中，可藉由一標準電子束微影(EBL)製程或使用預製催化劑膠體之自組裝在基板之頂部沈積一催化劑顆粒(通常為金或金合金)。亦可使用用於沈積催化劑之其他製程，諸如無電極電鍍。
生長後奈米配線之直徑通常藉由催化劑顆粒之面積而決定。因此，可藉由沈積具有一合適大小之催化劑顆粒而合成具有一所要直徑之奈米配線。此步驟通常決定奈米配線畫素之功能性，因為奈米配線直徑應具有合適之截面面積以允許具有特定波長之光之傳輸且應足夠長以允許光吸收及激子(電子電洞對)的產生。
在可適當條件下從催化劑顆粒中生長一單個奈米配線。使用矽作為一實例，舉例而言可在650℃之溫度及200 mTorr之壓力下使用汽液固(VLS)製程在有SiH4 存在的情況下生長一適當奈米配線。低於450℃之溫度適合於CMOS電路及奈米配線合成之整合相容性。許多研究者已能夠在430℃或甚至低於400℃之溫度下藉由使用一些特殊技術，舉例而言使用鋁催化劑或電漿增強型生長合成矽奈米配線。在VLS製程期間，可藉由分別引入B2 H6 、H2 及PH3 摻雜矽奈米配線以產生p+ -i(本徵)-n+ 結構。
奈米配線與相應塊狀材料相比具有更高的表面體積比。因此奈米配線之表面狀態在其等電子性質及光性質中發揮更重要的作用。然而，可在奈米配線合成之後藉由鈍化表面而使奈米配線表面狀態之影響最小化。通常，可用在奈米配線之表面上與矽懸盪結合反應之一單層材料而達成表面鈍化。這在反應後形成穩定結合而達成。鈍化有利地對於奈米配線之物理尺寸幾乎無影響，因為它僅一單層厚。
之後的步驟係關於覆蓋奈米配線之經n或p摻雜之一磊晶層之形成或圍繞奈米配線之介電質層之一者或多者之形成。
可使用氣相磊晶(VPE)(化學氣相沈積之一改良)生長覆蓋奈米配線之磊晶n或p摻雜層。亦可使用分子束磊晶、液相磊晶(MBE及LPE)及固相磊晶(SPE)。在此等製程之每一者中，可在磊晶層生長製程期間將一摻雜物添加入磊晶生長之層中。
若需要，可藉由化學氣相沈積(CVD)、原子層沈積(ALD)、氧化或硝化而製作圍繞奈米配線塗佈之一等形介電質。隨後，可藉由電漿增強型化學氣相沈積、旋塗或濺鍍，視需要使用一初始原子層沈積而在等形介電質塗層上形成經摻雜之玻璃介電質層。可藉由化學機械平坦化或其他蝕刻方法回蝕該經沈積之經摻雜玻璃介電質層。
在一實施例中，可按如下方式製作用於將電磁輻射諸如光經通道引導出奈米配線波導之一漏斗狀部分及該漏斗狀部分上之一透鏡：藉由CVD、濺鍍沈積或旋塗沈積一玻璃/氧化物/介電質層；在經沈積之玻璃/氧化物/介電質層上施加光阻劑；移除深腔內位於奈米配線上方中心之一開口外部之光阻劑；並藉由在玻璃/氧化物/介電質層中半各方同性蝕刻而形成一耦合器。
額外步驟係關於藉由在一或多個介電質層之垂直壁上沈積諸如銅之一金屬而形成圍繞該一或多個介電質層之一金屬或金屬氧化物環層。
可以已知方式改變生長製程以在奈米配線中包含異質結構；提供反射層等。可藉由首先生長一薄的奈米配線；沈積覆蓋下部部分之一反射層或一選擇性生長遮罩；及徑向生長一包覆層或增加奈米配線厚度而提供一些實施例中之底座。
可在在一格柵中具有大量相同顯示元件(通常多於1百萬個)之一影像顯示裝置中使用具有光學回饋之含有奈米配線之LED。本文所揭示之實施例允許此一NWLOF格柵之製造。
在一些實施方案中，可在一影像顯示裝置中提供大量複數個奈米結構LED。複數個奈米結構LED可磊晶生長在一摻雜Zn之GaP基板上。LED之奈米配線可為本徵GaAs且具有未摻雜之InGaP之一同心層。體積元件可包括摻雜Si之InGaP。奈米配線及基板之下部部分可覆蓋一SiO2 層。可在連接複數個LED之基板上提供一背板接點，且各個別LED可具有圍繞體積元件上之接點之一包封。可連接圍繞接點之該包封以按群組對LED進行定址。
在一實施例中，如上所述，奈米配線在有限組之較佳方向上生長之固有性質可用於在同一方向或有限組之方向之一者上生長奈米配線。所生長之奈米配線之方向可垂直於基板或與基板之垂直線成一角度。LED較佳可經配置以產生經均勻引導之光束。鄰近LED群組可提供一反射材料，其對應於LED之方向與基板成一角度從而可在一所要方向上藉由反射材料反射從LED發射之光。
本文所揭示之影像顯示裝置之額外特徵為：(1)具有不同畫素之一發光表面。存在三種類型之畫素，各發射一種色彩：紅色、藍色或綠色。顯示色彩係從三種色彩(紅色、藍色及綠色)之組合中構建顯示色彩。(人)眼直接透過一放大透鏡觀察表面且因此看見影像。影像可隨時間而變化以顯示移動物體及類似物。(2)可存在與特徵(1)相同之畫素組態，但是從表面發射之光係透過一透鏡而聚焦，且隨後在一非主動式表面諸如螢幕上顯示最終影像。兩種情況皆為可行之實施例。前者係關於一顯示器，諸如電視、電腦螢幕及類似物，且另一者係關於一電子投影儀。如何分割影像顯示裝置之一晶片之一闡釋係繪示於圖4中以形成一單晶片系統(SOC)。來自LED陣列之視訊影像係透過一透鏡而聚焦且直接在頭戴式顯示器中觀看或投射至一螢幕上。
複數個NWLOF較佳包括用於發射一第一色彩之至少一第一主動區、用於發射一第二色彩之一第二主動區及用於發射一第三色彩之一第三主動區。影像顯示器較佳不包含一彩色濾光器。
影像顯示裝置視需要可具有三個晶片以各自從各晶片中產生紅光、綠光及藍光且藉由一外部電路及光學系統而交錯。各晶片可僅由一單色LED陣列組成以方便製造。
複數個NWLOF較佳包括用於控制第一色彩之發射之至少一第一電參數、用於控制第二色彩之發射之一第二電參數及用於控制第三色彩之發射之一第三電參數。影像顯示器較佳包括一顯示裝置、一微顯示器、一電腦顯示器、TV及一單晶片顯示系統。
根據本文之實施例，可製造具有除NWLOF以外之其他複雜電路之一裝置。舉例而言，此一裝置可為製作在一矽基板上之一單晶片系統(SoC)。
舉例而言，顯示器(諸如圖4所示之顯示器)可為具有下列電路之一自含顯示裝置：一NWLOF格柵、一列行定址電路、光電二極體陣列之一視訊信號處理鏈、奈米配線LED之偏壓電路之一回饋迴路電路、電源供應器及調節電路、用於解碼標準視訊信號之數位電路、及使管控該裝置所產生之所有熱成為可能之一熱聲設計。一旦達成此SoC，現即可設計一單晶片顯示系統，該單晶片顯示系統僅需運作為顯示SoC之一透鏡。
一顯示晶片需要的主要電路區塊有：
1)　圖3所述之方格狀奈米配線LED陣列。
2)　用於個別為一LED及其相關聯之光電二極體定址或用於將一鄰近LED群組映射至一單個光電二極體之列行解碼電路。
3)　用於提供光電二極體陣列之讀出以提供輸入至LED陣列及光電二極體陣列之控制器電路(該控制器電路本身係用於穩定個別LED陣列或LED陣列群組之光輸出)、電源供應器及調節器之視訊信號處理鏈之一主要類比電路區塊。
4)　用於將標準視訊輸入轉化為所有其他電路在晶片中運作所需之一格式之一數位視訊解碼電路。
5)　用作視訊資料緩衝及程式儲存之動態及靜態記憶體區塊。
6)　可包含用以實行一微處理器之功能之任一者之視需要之微處理器。
藉由適當選擇奈米配線之材料、磊晶層及奈米配線之直徑，可實施紅色、綠色及藍色LED。圖3(a)及圖3(b)繪示較佳之LED陣列方格。存在許多其他可行之配置，舉例而言：
R G B R G B R G B R G B R G B R G B R G B R G B
B G R B G R B G R B G R B G R B G R B G R B G R
R G B R G B R G B R G B R G B R G B R G B R G B
圖2所示之釘紮光電二極體係描述於美國專利第6,100,551號，其全文以引用的方式併入本文中。圖2圖解說明用於生成本發明之感測器之裝置之一截面圖。這是通常在CMOS技術中使用一混合製程技術藉由一釘紮光電二極體裝置(圖2中之物件12 PPD)而製造之一主動式畫素感測器(APS)架構之整合之結果。PPD成為一XY可定址區域陣列中之光敏元件。
首先在關閉奈米配線LED的同時藉由具有一外部源之整個陣列之暗照明及均勻照明確保光電二極體陣列之均勻度。隨後將增益、三個色彩通道之黑色位準及電路中可獲得之任何其他控制調整至其等之初始值。類似地，藉由透過一初始校正程序個別或以映射群組方式設定光電二極體/LED對之迴路增益值而確保LED陣列之逐個畫素之均勻度。
在隨後的運作中，LED輸出將在釘紮光電二極體允許的範圍內維持不受溫度變化的影響。此外，此方法將減輕運作期間在顯示器中由LED陣列所產生之不均勻及亮度之局部或全面偏移(包含由於製造不均勻所產生之固定型樣之雜訊)之發展
整個處理、記憶體、控制及驅動系統通常可稱作一控制器。各種其他類型之電路亦可作為控制器且實施例並不限於所使用之一特定電路。
本申請案中所涉及之所有參考之全文係以引用的方式併入本文中。
12．．．物件PPD
圖1係具有光學回饋之一含有奈米配線之發光二極體(LED)之一示意圖。
圖2係一釘紮光電二極體之一示意圖。
圖3係LED陣列方格之一示意圖。
圖4係經分割以包含LED陣列及光學回饋之一晶片之一示意圖。
(無元件符號說明)

Claims (48)

  1. 一種奈米結構裝置，其包括一基板、從該基板之一第一側伸出之一奈米配線(nanowire)、一包含該奈米配線之一部分之發光二極體(LED)、一位於該基板中且圍繞該奈米配線之光學感測器及一電子電路，其中該光學感測器係經組態以偵測藉由該LED中之電子與電洞之再結合而在該LED中所產生之一光之至少一第一部分，且該電子電路係經組態以控制該LED之一偏壓。
  2. 如請求項1之裝置，其中該LED包括一PN接面或一PIN接面。
  3. 如請求項1之裝置，其中該光學感測器之一輸出係對該電子電路之一輸入。
  4. 如請求項1之裝置，其中該電子電路係經組態以控制該偏壓使得該LED之該光輸出維持實質恆定，而不論該LED之一運作溫度範圍內之該LED之一溫度。
  5. 如請求項1之裝置，其中該電子電路係經組態以控制該偏壓使得該光輸出維持實質恆定，而不論該LED之組合物變化。
  6. 如請求項1之裝置，其中該LED中所產生之光之至少一部分係在與該奈米配線平行之一方向上引導。
  7. 如請求項1之裝置，其中該奈米配線係一波導。
  8. 如請求項1之裝置，其進一步包括一體積元件，其中該LED包括該體積元件之一部分。
  9. 如請求項8之裝置，其中該體積元件包括經組態以提供 一p區或n區之一摻雜層及一阱層。
  10. 如請求項1之裝置，其中該光學感測器包括一釘紮光電二極體(pinned photodiode)。
  11. 如請求項1之裝置，其進一步包括該基板上圍繞該奈米配線及/或在該奈米配線內之一部分反射層，其中該部分反射層係經組態以使得光之該第一部分可透過該部分反射層傳輸至該光學感測器且使得光之至少一第二部分可從該部分反射層之一表面反射。
  12. 如請求項1之裝置，其進一步包括圍繞該奈米配線之一或多個包覆層，其中該一或多個包覆層係經組態使得該奈米配線係經組態以形成一波導。
  13. 如請求項12之裝置，其中該一或多個包覆層係經組態以提供一分級折射率使得該奈米配線之一折射率高於該一或多個包覆層之該折射率。
  14. 如請求項1之裝置，其中該裝置包括複數個奈米配線，該複數個奈米配線包括發射不同波長範圍之光之不同材料。
  15. 如請求項1之裝置，其中該裝置包括複數個奈米配線，該複數個奈米配線包括形成用於不同波長範圍之光之波導之不同直徑。
  16. 如請求項1之裝置，其中該裝置包括複數個奈米配線，該複數個奈米配線包括發射不同波長範圍之光之不同材料，且該裝置包括複數個奈米配線，該複數個奈米配線包括形成用於不同波長範圍之光之波導之不同直徑。
  17. 如請求項8之裝置，其中該奈米配線及該體積元件係經配置以透過該奈米配線及該基板引導光使得光從相對於該第一側之該基板之一第二側發射。
  18. 如請求項8之裝置，其中該體積元件係經組態以藉由在介於該奈米配線與該體積元件之間之一接面上分散而散佈光。
  19. 如請求項1之裝置，其中該電子電路包括經組態以校正該偏壓之一控制器。
  20. 如請求項19之裝置，其中該控制器包括記憶體，該記憶體包括用於控制該偏壓之值使得該LED之光輸出係藉由該記憶體中所儲存之該等值而設定。
  21. 如請求項19之裝置，其中該控制器包括記憶體，其中該控制器係經組態以基於該記憶體中所儲存之該光輸出之目標值而校正該偏壓以使該LED之光輸出匹配一目標輸出。
  22. 如請求項21之裝置，其中該等目標值代表不同色彩之光的電流值。
  23. 如請求項21之裝置，其中該等目標值代表目標亮度位準。
  24. 如請求項1之裝置，其進一步包括圍繞該奈米配線之一低折射率材料及圍繞該低折射率材料之一金屬層，其中該低折射率材料具有一比該奈米配線較低之折射率。
  25. 如請求項1之裝置，其中該裝置為一電子晶片。
  26. 如請求項25之裝置，其中該LED僅產生一單色光。
  27. 如請求項25之裝置，其中該電子晶片包括用於發射一第一色彩之至少一第一LED、用於發射一第二色彩之一第二LED及用於發射一第三色彩之一第三LED。
  28. 如請求項25之裝置，其中該晶片不包含一彩色濾光器。
  29. 如請求項27之裝置，其中該等第一、第二及第三色彩分別為紅色、綠色及藍色。
  30. 如請求項1之裝置，其進一步包括一位於該光學感測器與該電子電路間之回饋迴路。
  31. 如請求項1之裝置，其中該電子電路係經組態以基於該光學感測器之一輸出而控制該偏壓使得該LED之光輸出維持實質恆定，而不論該LED之一溫度。
  32. 如請求項1之裝置，其中該光學感測器包括具有實質不受該LED之一運作溫度範圍中之一溫度影響之一性能特點之一PN或PIN光電二極體。
  33. 如請求項1之裝置，其中該LED係與任何臨接之LED光學隔離。
  34. 如請求項1之裝置，其中該光學感測器量測並提供與該光之一強度成比例之一信號。
  35. 如請求項1之裝置，其中該光之至少一部份係紅外光。
  36. 如請求項1之裝置，其中該奈米配線具有大於100nm之一直徑。
  37. 如請求項1之裝置，其中該奈米配線包括砷化鎵。
  38. 一種影像顯示器，其包括如請求項1之裝置。
  39. 如請求項38之影像顯示器，其中該裝置包括用於發射一 第一色彩之至少一第一LED、用於發射一第二色彩之一第二LED及用於發射一第三色彩之一第三LED。
  40. 如請求項38之影像顯示器，其中該影像顯示器不包含一彩色濾光器。
  41. 如請求項38之影像顯示器，其經組態以產生一第一色彩、一第二色彩及一第三色彩，並經組態以藉由一第一偏壓控制該第一色彩之發射、藉由一第二偏壓控制該第二色彩之發射及藉由一第三偏壓控制該第三色彩之發射。
  42. 如請求項38之影像顯示器，其中該光學感測器包括具有實質不受該LED之一運作溫度範圍中之一溫度影響之一性能特點之一PN或PIN光電二極體。
  43. 如請求項38之影像顯示器，其中該光學感測器包括具有實質不受該LED之組合物變化影響之一性能特點之一PN或PIN光電二極體。
  44. 如請求項38之影像顯示器，其中該影像顯示器包括一電視單晶片系統。
  45. 如請求項38之影像顯示器，其中該影像顯示器包括一微顯示器。
  46. 如請求項38之影像顯示器，其進一步包括經組態以在一螢幕上投射光之一透鏡。
  47. 如請求項38之影像顯示器，其中該基板包括矽。
  48. 如請求項47之影像顯示器，其中該奈米配線包括發射紅光、綠光或藍光之材料。
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