US20140246684A1 - Nano structured leds - Google Patents
Nano structured leds Download PDFInfo
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- US20140246684A1 US20140246684A1 US14/274,448 US201414274448A US2014246684A1 US 20140246684 A1 US20140246684 A1 US 20140246684A1 US 201414274448 A US201414274448 A US 201414274448A US 2014246684 A1 US2014246684 A1 US 2014246684A1
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- United States
- Prior art keywords
- nanowire
- led
- light
- substrate
- image display
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- 239000002070 nanowire Substances 0.000 claims abstract description 205
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 230000003287 optical effect Effects 0.000 claims abstract description 41
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 5
- 239000003086 colorant Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 69
- 239000000463 material Substances 0.000 description 62
- 239000004065 semiconductor Substances 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 238000005253 cladding Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910005540 GaP Inorganic materials 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000000348 solid-phase epitaxy Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910015158 Mo6Se6 Inorganic materials 0.000 description 1
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- -1 SiN Chemical class 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- HLVRMBHKGAMNOI-UHFFFAOYSA-N gallium(ii) sulfide Chemical compound [Ga]=S HLVRMBHKGAMNOI-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RJMMFJHMVBOLGY-UHFFFAOYSA-N indium(3+) Chemical compound [In+3] RJMMFJHMVBOLGY-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910000340 lead(II) sulfide Inorganic materials 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Definitions
- Nanowires can be used for constructing light emitting diodes (LED).
- LED light emitting diodes
- Nano-structured LEDs produce light with very high efficiency. They provide a wide range in the choice of materials thereby allowing access to a wide range of wavelengths including red, green and blue light. It is well known, however, that PIN junction LEDs have a light output and wavelength that varies with temperature. Thus, even though the concept of an LED television (TV) is known, the practical application of LEDs for TV has not hitherto been possible.
- TV LED television
- FIG. 1 is a schematic of a nanowire-containing light emitting diode (LED) with optical feedback.
- FIG. 2 is a schematic of a pinned photodiode.
- FIG. 3 is a schematic of tessellations for the LED array.
- FIG. 4 is a schematic of a chip partitioned to include the LED array and optical feedback.
- nanowire refers to a structure that has a thickness or diameter of the order of several nanometers, for example, 100 nanometers or less and an unconstrained length.
- An active nanowire is generally capable of converting photons into excitons.
- Nanowires could exhibit aspect ratios (length-to-width ratio) of 1000 or more. As such they could be referred to as 1-dimensional materials. Nanowires could have many interesting properties that are not seen in bulk or 3-D materials. This is because electrons in nanowires could be quantum confined laterally and thus occupy energy levels that could be different from the traditional continuum of energy levels or bands found in bulk materials. As a result, nanowires could have discrete values of electrical and optical conductance.
- Nanowires could include metallic (e.g., Ni, Pt, Au), semiconducting (e.g., Si, InP, GaN, etc.), and insulating (e.g., SiO 2 , TiO 2 ) materials.
- Molecular nanowires are composed of repeating molecular units either organic or inorganic. Examples of nanowires include inorganic molecular nanowires (Mo 6 S 9-x I x , Li 2 Mo 6 Se 6 ), which could have a diameter of 0.9 nm, and can be hundreds of micrometers long. Other examples are based on semiconductors such as InP, Si, GaN, etc., dielectrics (e.g. SiO 2 , TiO 2 ), or metals (e.g.
- An active-pixel sensor also commonly written active pixel sensor, is an image sensor consisting of an integrated circuit containing an array of pixel sensors, each pixel containing a photodetector and an active amplifier.
- a passive-pixel sensor is a pixel sensor without its own amplifier.
- excitons refers to electron-hole pairs.
- An active element is any type of circuit component with the ability to electrically control electron and/or hole flow (electricity controlling electricity or light, or vice versa). Components incapable of controlling current by means of another electrical signal are called passive elements. Resistors, capacitors, inductors, transformers, and even diodes are all considered passive elements. Active elements include in embodiments disclosed herein, but are not limited to, an active nanowire, an active waveguide, transistors, silicon-controlled rectifiers (SCRs), light emitting diodes, and photodiodes.
- a waveguide is a system or material designed to confine and direct electromagnetic radiation of selective wavelengths in a direction determined by its physical boundaries.
- the selective wavelength is a function of the diameter of the waveguide.
- An active waveguide is a waveguide that has the ability to electrically control electron and/or hole flow (electricity controlling electricity or light, or vice versa). This ability of the active waveguide, for example, is one reason why the active waveguide could be considered to be “active” and within the genus of an active element.
- An optical pipe is an element to confine and transmit an electromagnetic radiation.
- the optical pipe can include a core and a cladding.
- the core could be a nanowire.
- the optical pipe could be configured to separate wavelengths of an electromagnetic radiation beam at a selective wavelength through the core and the cladding, wherein the core is configured to be both a channel to transmit the wavelengths up to the selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the core.
- a core and a cladding are generally complimentary components of the optical pipe and are configured to separate wavelengths of an electromagnetic radiation beam at a selective wavelength through the core and cladding.
- a photogate is a gate used in an optoelectronic device.
- the photogate comprises a metal-oxide-semiconductor (MOS) structure.
- MOS metal-oxide-semiconductor
- the photogate controls the accumulation of photons generated charges during the integration time of the photodiode and controls the transfer of charges when integration is over.
- a photodiode comprises a pn junction, however, a photogate can be placed on any type semiconductor material.
- a vertical photogate is a new structure. Normally, photogates are placed horizontally on planar photodiode devices. In a nanowire device, however, the photogate can be formed in a vertical direction. That is, the photogate can be oriented standing up covering the lateral surface of the nanowire.
- a transfer gate is a gate of a switch transistor used in a pixel.
- the transfer gate's role is to transfer the charges from one side of a device to another.
- the transfer gate is used to transfer the charges from the photodiode to the sensing node (or floating diffusion).
- a reset gate is a gate used for resetting a device.
- the reset gate is the sense node that is formed by an n+ region.
- Reset means to restore to original voltage level set by a certain voltage.
- the voltage of the reset drain (RD) is the voltage used as a reset level.
- Reset means to clear any pending errors or events and bring a system to normal condition or initial state, usually in a controlled manner. Rest is usually done in response to an error condition or completion of events when it is impossible or undesirable for a processing activity to proceed.
- the ability for an electronic device to be able to reset itself in case of error, abnormal power loss or completion of events could be an aspect of embedded system design and programming.
- An intrinsic semiconductor also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present.
- the number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities.
- the conductivity of intrinsic semiconductors can be due to crystal defects or to thermal excitation.
- the number of electrons in the conduction band is equal to the number of holes in the valence band.
- a SOC (system on a chip) is a single integrated circuit, i.e., a processor, a bus, and/or other elements on a single monolithic substrate.
- a system on a chip may include a configurable logic unit.
- the configurable logic unit may include a processor, interface, and a programmable logic on the same substrate.
- a system-on-chip IC may include various reusable functional blocks, such as microprocessors, interfaces, memory arrays, and DSPs (digital signal processors). Such pre-designed functional blocks are commonly called cores.
- the SOC may include a plurality of cores in a single chip. The cores embedded in the SOC may be separately designed and tested before being combined in a chip.
- SOCs may have significant advantages over electronic systems created on boards with discrete components.
- An integrated circuit having an SOC is generally much smaller than a circuit board based system.
- the reduction in size afforded by SOCs also may lead to improvements in power consumption and device speed.
- SOCs may combine fixed and programmable intellectual property cores with custom logic and memory, connected through a bus, on a single piece of silicon, thereby greatly reducing its overall cost.
- a chip is a semiconducting material (usually silicon) on which an integrated circuit is embedded.
- a typical chip can contain millions of electronic components (transistors).
- CPU chips also called microprocessors
- memory chips contain blank memory.
- An integrated circuit also known as IC, microchip, silicon chip, computer chip or chip
- IC integrated circuit
- microchip silicon chip
- computer chip or chip is a device that may include many electronic components (transistors, capacitors, resistors, diodes, and other circuit components). These components are often interconnected to form multiple circuit components (e.g., gates, cells, memory units, arithmetic units, controllers, decoders, etc.) on the IC.
- An example of an integrated circuit is a central processing unit (CPU) in a computer.
- CPU central processing unit
- An integrated circuit may implement one or more cores that perform the various functions of the integrated circuit as well as circuitry for communicating with other integrated circuits and devices external to the integrated circuit.
- Integrated circuits typically comprise a semiconductor substrate on which several component layers have been formed to produce a large number of laterally-distributed transistors and other circuit devices. Additional connection layers may be formed on top of the component layers to provide interconnections among and power to the circuit devices, and input and output signal connections to the devices.
- An integrated circuit is generally fabricated utilizing a chip of silicon or other semiconductor material, also referred to as a die.
- the die consists of a substrate composed of a semiconductor material such as silicon or germanium.
- One side of the substrate may be provided with a plurality of circuit structures that makeup the integrated circuit and the other may be left as relatively bare substrate material that is normally planarized via a polishing step.
- a die is typically installed in a package, and electrically connected to leads of the package.
- a hybrid integrated circuit is a miniaturized electronic circuit constructed of individual semiconductor devices, as well as passive components, bonded to a substrate or circuit board. Integrated circuits can be classified into analog integrated circuits, digital integrated circuits and mixed signal integrated circuits (both analog and digital on the same chip).
- a digital signal processor is a specialized microprocessor designed specifically for digital signal processing such as video signal processing, generally in real-time computing.
- Digital signal processing algorithms typically require a large number of mathematical operations to be performed quickly on a set of data. Signals are converted from analog to digital, manipulated digitally, and then converted again to analog form.
- a PN junction is a junction formed by combining p-type and n-type semiconductors together in very close contact.
- a PIN junction is a junction formed by combining a lightly doped ‘near’ intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor regions. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts.
- junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region between the p-type and n-type blocks.
- An embodiment relates to a nanostrucuted LED with an optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region.
- the nanostructured LED in one example implementation, may further comprise a volume element epitaxially connected to the nanowire. The volume element could provide a high doping degree for the formation of the active region, typically within or close to the nanowire, with or without requiring the nanowire itself to be doped.
- the nanostructured LED without optical feedback would be the combination of the substrate, the nanowire and a volume element, wherein a portion of the nanowire and a portion of the volume element are configured to form the active region.
- the volume element could be a cylindrical bulb, but is not limited to a cylindrical bulb with a dome-shaped top, a spherical/ellipsoidal, and pyramidal.
- the volume element can extend in three dimensions; can have a large volume, and a large surface.
- the volume element/nanowire architecture enhances both electrical and optical performance of a LED.
- the nanowire material composition can be chosen to propagate into the volume element in order to decrease the optical disturbance by the connection with the nanowire.
- the nanostructured LED of an embodiment may include a PN or PIN-junction that could produce an active region to produce light within the structure during use.
- the nanowire, a part of the nanowire, or a structure in connection with the nanowire, could form a waveguide directing at least a portion of the light produced in the active region in a given direction.
- the nanowire and the volume element could be embedded in a low index material like SiO 2 .
- the low index region e.g., a cover layer
- This metal ring may also aid in the local removal of heat generated by each LED.
- a nano-structured LED makes it possible to use a very large fraction of the light produced by the LED. This is at least partly achieved by the nanowire being used as a waveguide, directing the light produced in the junction out of the surface.
- nanowire as a waveguide offers a possibility to direct light in well defined directions.
- light beams can be focused, or dispersed, depending on the intended use.
- a concave surface on the nanowire and the silica surrounding it would help provide a focused beam of light suitable for a display system.
- the nanowire technology offers possibilities in choices of materials and material combinations not possible in conventional bulk layer techniques. This could be used in the nano-structured LED to provide LEDs producing light in wavelength regions not accessible by conventional techniques, for example violet and UV.
- the nano-structured LED allows for inclusions of heterostructures as well as areas of different doping within the nanowire, facilitating optimization of electrical and/or optical properties.
- an optical feedback loop to create a uniformity of light emission is highly desirable.
- Such a feedback loop would include an optical sensor to measure a fraction of the light output of the LED in real time and an electronic circuit to use the measurement to adjust the operating point of the LED.
- An embodiment could include a nano-structured LED grown on a substrate that already has an embedded photodiode such as pinned photodiode.
- the light from the nano-structured LED is partially transmitted to the substrate where a photodiode measures and provides a signal proportional to the intensity of the light generated by the LED. This signal in turn is used in a feedback loop to control the bias point of the LED such that a stable light output is maintained at the desired intensity.
- the nanowire-containing LED with optical feedback could further comprise a partially reflective layer on the substrate surrounding and/or within the nanowire, wherein the partially reflective layer is configured to allow a first portion of the light to transmit through the partially reflective layer to the optical sensor and to allow at least a second portion of the light to reflect from a surface of the partially reflective layer.
- the NWLOF could further comprise one or more cladding layers surrounding the nanowire, wherein the one or more cladding layers are configured such that the nanowire is configured to form a waveguide.
- the NWLOF could further comprise a low-index material having a lower refractive index surrounding the nanowire and a metal layer surrounding the low-index material.
- the NWLOF could further comprise a volume element, wherein a portion of the nanowire and a portion of the volume element are configured to form the active region.
- FIG. 1 provides an example implementation of this concept.
- the LED could be composed of the p region in the substrate over which it is grown, the intrinsic nanowire made out of any of the suitable materials listed above and an n type epitaxial region surrounding and contacting the nanowire.
- a photodiode is embedded into the substrate on which the nanowire is grown.
- An example of a pinned photodiode is illustrated in FIG. 2 .
- FIG. 1 is an example implementation. Another possible implementation (not shown in FIG. 1 ) would place the LED on the back side of the substrate containing the photodiode. This would require thinning the substrate such that photons from the LED can easily be collected by the potential well (the n+ region in FIG. 1 ) of the photodiode.
- a nanostructured LED according to the embodiments comprises of an upstanding nanowire.
- an upstanding nanowire should be interpreted as a nanowire protruding from the substrate in some angle, the upstanding nanowire for example being grown from the substrate, preferably by as vapor-liquid-solid (VLS) grown nanowires.
- VLS vapor-liquid-solid
- the angle with the substrate will typically be a result of the materials in the substrate and the nanowire, the surface of the substrate and growth conditions. By controlling these parameters it is possible to produce nanowires pointing in only one direction, for example vertical, or in a limited set of directions.
- nanowires and substrates of zinc-blende and diamond semiconductors composed of elements from columns III, V and IV of the periodic table can be grown in the [111] directions and then be grown in the normal direction to any ⁇ 111 ⁇ substrate surface.
- Other directions given as the angle between normal to the surface and the axial direction of the nanowire include 70, 53° ⁇ 111 ⁇ , 54, 73° ⁇ 100 ⁇ , and 35, 27° and 90°, both to ⁇ 110 ⁇ .
- the nanowires define one, or a limited set, of directions.
- a part of the nanowire or structure formed from the nanowire could be used as a waveguide directing and confining at least a portion of the light created in ⁇ in or from/out of? ⁇ the nanostructured LED in a direction given by the upstanding nanowire.
- the waveguiding nanostructured LED structure could include a high refractive index nanowire with one or more surrounding cladding with refractive indices less than that of the core.
- the structure could be either circular symmetrical or close to being circular symmetrical.
- Light waveguiding in circular symmetrical structures are well know for fiber-optic applications and many parallels can be made to the area of rare-earth-doped fiber optic devices. However, one difference is that fiber amplifier are optically pumped to enhance the light guided through them while the described nanostructured LED can be seen as an efficient light to electricity converter and vice versa.
- an output of the optical sensor is an input to the electronic circuit.
- the electrical parameter comprises voltage or current.
- the electronic circuit is configured to control voltage or current such that the light output is maintained substantially constant irrespective of a temperature of the active region within an operating temperature range of the active region.
- the optical sensor comprises a pn or p-i-n photodiode having a performance characteristic that is substantially insensitive to a temperature in an operating temperature range of the active region.
- at least a portion of the light produced in the active region is directed in a direction given by the nanowire.
- the nanowire is configured to both produce light and form a waveguide.
- the volume element comprises a doping layer configured to provide a p or n region and a well layer.
- the optical sensor comprises a pinned photodiode in the substrate.
- the one or more cladding layers are configured to provide a graded refractive index such that a refractive index of the nanowire is higher than that of the one or more cladding layer.
- the NWLOF comprises a plurality of the nanowires comprising different materials emit different ranges of wavelengths of the light.
- the NWLOF comprises a plurality of the nanowires comprising different diameters that form waveguides for different ranges of wavelengths of the light.
- the NWLOF comprises a plurality of the nanowires comprising different materials emit different ranges of wavelengths of the light and the NWLOF comprises a plurality of the nanowires comprising different diameters that form waveguides for different ranges of wavelengths of the light.
- the nanowire and the volume element are arranged to direct the light through the nanowire and the substrate such that the light is emitted from a second side of the substrate opposite the first side.
- the substrate contains a photodiode that is optically coupled to the nanowire.
- the volume element is configured to spread the light by dispersion at a junction between the nanowire and the volume element.
- the electronic circuit comprises a controller configured to calibrate the electrical parameter.
- the controller comprises memory, the memory comprising values for controlling the electrical parameter so that the light output is set by the values stored in the memory.
- the controller comprises memory; wherein the controller is configured to calibrate the electrical parameter to cause the light output to more closely match a target output based on target values of the light output stored in the memory.
- the target values represent current values for different colors of the light.
- the target values represent target brightness levels.
- the waveguiding properties of the nanowire can be improved in different ways.
- the nanowire could have a first effective refractive index, n w , and a cladding surrounding at least a portion of the nanowire could have a second effective refractive index, n c , and by assuring that the first refractive index is larger than the second refractive index, n w >n c , good wave-guiding properties could be provided to the nanowire.
- the waveguiding properties may be further improved by introducing an optically active cladding.
- the high index material in the nanowire could, for example, be silicon nitride having a refractive index of about 2.0.
- the lower index cladding layer material could, for example, be a glass, for example a material selected from Table I, having a refractive index about 1.5.
- PESiN refers to plasma enhanced Si 3 N 4 and PESiO refers to plasma enhanced SiO 2 .
- a variety of materials can be used, such as: Si, GaAs (p), InAs, Ge, ZnO, InN, GaInN, GaN AlGaInN, InP, InAsP, GalnP, InGaP:Si, InGaP:Zn, GaInAs, AlInP, GaAlInP, GaAlInAsP, GaInSb, InSb among others.
- Si and doped Si materials are preferable.
- the typical values of the refractive indexes for III-V semiconductor nanowire material are in the range from 2.5 to 5.5 when combined with glass type of cladding material (such as SiO 2 or Si 3 N 4 ) having refractive indexes ranging from 1.4 to 2.3, satisfying the waveguiding requirement, n w >n c .
- NA Numerical Aperture
- a nanostructured LED according to the embodiments could comprise a substrate and a nanowire epitaxially grown from the substrate in a defined angle ⁇ .
- a portion of the nanowire is enclosed by a volume element.
- the volume element is preferably epitaxially connected to the nanowire.
- a portion of or all of the nanowire could be arranged to act as a waveguiding portion directing at least a portion of the impinging light in a direction given by the elongated direction of the nanowire, and will be referred to as a waveguide.
- the nanowire could have a diameter in the order of 50 nm to 500 nm.
- the length of the nanowire could be of the order of 1 to 10 ⁇ m.
- the pn-junction results in an active region arranged in the nanowire.
- the materials of the different members of the nanostructured LED are chosen so that the nanowire will have good waveguiding properties vis-a-vis the surrounding materials, i.e. the refractive index of the material in the nanowire should preferably be larger than the refractive indices of the surrounding materials.
- the nanowire has a first refracting index, n w , the material surrounding the nanowire in wave guide portion, typically a cover layer, a second refractive index, n c , and the a volume element, a third refractive then n ve , then n w >n c and n w >n ve .
- Typical values for the nanostructured LED are n w ⁇ 4, n c ⁇ 1.5 and n ve ⁇ 3.
- the nanowire may be provided with one or more layers.
- a first layer may be introduced to improve the surface properties (i.e., reduce charge leakage) of the nanowire.
- Further layers, for example an optical layer may be introduced specifically to improve the waveguiding properties of the nanowire, in manners similar to what is well established in the area of fiber optics.
- the optical layer typically has a refractive index in between the refractive index of the nanowire and the surrounding cladding region material.
- the intermediate layer has a graded refractive index, which has been shown to improve light transmission in certain cases. If an optical layer is utilized, the refractive index of the nanowire, n w , should define an effective refractive index for both the nanowire and the layers.
- the ability to grow nanowires with well defined diameters could be to optimize the waveguiding properties of the nanowire with regards to the wavelength of the light confined in the nanostructured LED.
- the diameter of the nanowire could be chosen so as to have a favorable correspondence to the wavelength of the desired light.
- the dimensions of the nanowire are such that a uniform optical cavity, optimized for the specific wavelength of the produced light, is provided along the nanowire.
- the nanowire generally is sufficiently wide to capture the desired light.
- a rule of thumb would be that diameter must be larger than ⁇ /2n w , wherein ⁇ is the wavelength of the desired light and n w is the refractive index of the nanowire.
- a diameter of about 60 nm may be appropriate to confine blue light only and one 80 nm may be appropriate for to confine both blue and green light in a silicon nanowire.
- a diameter above 100 nm would be sufficient.
- An approximate preferred upper limit for the diameter of the nanowire is given by the growth constrains, and could be in the order of 500 nm.
- the length of the nanowire is typically and preferably in the order of 1-10 ⁇ m, providing enough volume for the active region.
- a reflective layer could be in one embodiment, provided on the substrate and extending under the wire.
- the reflective layer is preferably provided in the form of a multilayered structure comprising repeated layers of silicates for example, or as a metal film.
- An alternative approach to getting a reflection in the lower end of the nanowire could be to arrange a reflective layer in the substrate underneath the nanowire.
- Yet another alternative could be to introduce reflective means within the waveguide.
- Such reflective means can be a multilayered structure provided during the growth process of the nanowire, the multilayered structure comprising repeated layers of for example SiN x /SiO x (dielectric) or GaAs/AlGaAs (semiconductor).
- Such repeated layers with controlled thickness could also serve as optical grating filters to precisely control the output wavelength of the LED to mitigate wavelength drift for example with temperature.
- a major part of the produced light is directed by the waveguide of the nanowire in a downward direction through the substrate.
- the light can be directed through the entire thickness of the substrate, or alternatively the substrate could be provided with a cut out beneath the base of the nanowire in order to reduce the thickness of the substrate and thereby reduce the scattering or absorption of light in the substrate.
- the substrate is preferably made of transparent material.
- a portion, or preferably the entire outer surface of the volume element may be covered by a reflective layer that increases the radiation of the produced light through the waveguide.
- the reflective layer for example formed of a metal, may additionally serve as a contact.
- Part of the nanowire and the substrate could optionally covered by a protective layer of SiC or SiN, for example.
- the volume element can be arranged to be a dispersive element, giving a light radiation that is essentially evenly distributed over a wide angle.
- a dispersive element giving a light radiation that is essentially evenly distributed over a wide angle.
- the active region may be arranged in the nanowire but alternatively may be within the volume element, and above the upper end of the nanowire, or radially outwards of the nanowire and possibly above.
- the nanowire should preferably at its lower end be provided with some of the reflective means, for example a reflective material within the nanowire, in order to redirect light upwards.
- the geometry of the volume element can be designed to further disperse the light. Dispersion is provided at the junction between the nanowire waveguide and the volume element and further at the edge formed by the upper boundary of the volume element.
- the height and width of the volume element can be chosen so that the edge disperses light further.
- One embodiment can be optimized for providing a collected and directionally oriented beam.
- the nanowire of relatively large diameter, preferably above 150 nm, can extend to the upper surface of the volume element.
- the nanowire can be provided with a concave lens like exit surface on the upper end.
- Nanowires acting as waveguides, can be used to improve the performance of conventional planar LEDs.
- a plurality of nanowires can be arranged on the surface of a planar LED.
- Light is produced in the active region, which could be an active layer of the planar LED, for example of GaAsP.
- the nanowires can be epitaxially connected on top of the planar LED layers in order to get a good matching of the different parts.
- the nanowires may be coated by a cladding layer protecting the nanowires and/or improving the properties, for example Si 3 N 4 .
- the surface in between the nanowires can be preferably coated with a reflective layer, for example of Au. At least a part of the light, produced in the active region, could enter the nanowires that are acting as waveguides and leading the light away from the substrate plane.
- Suitable materials for LED have to be matched with suitable materials for the photo diodes based on the wavelength of the light being emitted/detected by the system. Both the LED and the photo diode should work as intended in the wavelength range of light for which the system is configured to operate.
- the nanowire based technology allows for defect free combinations of materials that otherwise would be impossible to combine.
- the III-V semiconductors are of particular interest due to their properties facilitating high speed and low power electronics.
- Suitable materials for the substrate include, but is not limited to: Si, GaAs, GaP, GaP:Zn, InAs, InP, GaN, Al 2 O 3 , SiC, Ge, GaSb, ZnO, InSb, SOI (silicon-on-insulator), CdS, ZnSe, CdTe.
- a Si substrate is preferred since it embeds a CMOS photodiode underneath the LED.
- Si could be used in the photo diode.
- GaAs in photodiodes for LED in the range of 800-1500 nm, e.g., 850 nm; and InGaAs/InP in the range 1310-1550 nm.
- Suitable materials for the nanowire include, but is not limited to: Si, GaAs (p), InAs, Ge, ZnO, InN, GaInN, GaN AlGaInN, BN, InP, InAsP, GalnP, InGaP:Si, InGaP:Zn, GaInAs, AlInP, GaAlInP, GaAlInAsP, GaInSb, InSb.
- the nano wire materials are carefully selected from the list above and the Table 1 below to produce red, green and blue light.
- wavelength and bandgap energy may be obtained from:
- a stream of photons with a wavelength of 532 nm (green light) would have an energy of approximately 2.33 eV.
- 1 eV would correspond to a stream of infrared photons of wavelength 1240 nm, and so on.
- Possible donor dopants for example include GaP, Te, Se, S, etc, and acceptor dopants for the same material are Zn, Fe, Mg, Be, Cd, etc.
- acceptor dopants for the same material are Zn, Fe, Mg, Be, Cd, etc.
- the nanowire technology makes it possible to use nitrides such as SiN, GaN, InN and AlN, which facilitates fabrication of LEDs detecting light in wavelength regions not easily accessible by conventional technique.
- Other combination of particular commercial interest include, but is not limited to GaAs, GalnP, GaAlInP, GaP systems. Typical doping levels range from 1 ⁇ 10 18 cm ⁇ 3 to 1 ⁇ 10 20 cm ⁇ 3 .
- low resistivity contact materials are dependent on the material to be deposited on, but metal, metal alloys, as well as non-metal compounds, like: Al, Al—Si, TiSi 2 , TiN, W, MoSi 2 , PtSi, CoSi 2 , WSi 2 , In, AuGa, AuSb, AuGe, PdGe, Ti/Pt/Au, Ti/Al/Ti/Au, Pd/Au, ITO (InSnO), etc. and combinations of, e.g., metal and ITO can be used.
- the substrate could be an integral part of the device, since it also contains the photodiodes necessary to detect light that has not been confined to the nanowire.
- the substrate in addition also contains standard CMOS circuits to control the biasing, amplification and readout of the LED as well as any other CMOS circuit deemed necessary and useful.
- the substrate includes substrates having active devices therein. Suitable materials for the substrates include silicon and silicon-containing materials.
- each sensor element of the embodiment includes a nanostructured LED structure comprising a nanowire, a cladding enclosing at least a portion of the nanowire, a coupler and two contacts.
- GaAs circuitry can be used with the appropriate light emitting materials for those wavelengths.
- a micro lens could be located on the LED, for example, as shown in FIG. 1 .
- the micro lens may comprise any of several optically transparent lens materials that are known in the art. Non-limiting examples include optically transparent inorganic materials, optically transparent organic materials and optically transparent composite materials. Most common are optically transparent organic materials.
- the lens layers could be formed incident to patterning and reflow of an organic polymer material that has a glass transition temperature lower than the series of color filter layers, if present, or the patterned planarizing layer. Polymeric materials should preferably have a high degree of stability with temperature to act as micro lenses for LEDs since this device needs to perform at high temperatures.
- the micro lens of FIG. 1 does not require a new material; simply patterning the clad material to the right shape forms it.
- a method of fabricating nanostructured LED is to first grow a nanowire. Part of the nanowire could then be masked and the volume element could be grown selectively. The volume element grows both axially and radial, hence, when the nanowire is masked partly, the nanowire becomes enclosed in the volume element.
- Appropriate masking materials are e.g. silicon nitride, silicon oxide etc.
- nanowire growth is locally enhanced by a substance, as VLS grown nanowires
- the ability to alter between radial and axial growth by altering growth conditions enables the procedure (nanowire growth, mask formation, and subsequent selective growth) and can be repeated to form nanowire/3D-sequences of higher order.
- the nanowire growth and selective growth are not distinguished by separate growth conditions it may be better to first grow the nanowire along the length and by different selective growth steps grow different types of 3D regions or volume elements.
- the substrate could be Si containing the photodiode.
- the substrate could be Si containing the photodiode.
- the substrate could be Si containing the photodiode.
- silicon nanowires could be grown on a layer of silicon.
- the process could apply for growing Si NW on dielectric layer, or for III-V compound grown on the appropriate substrate, including Si substrate with or without a thin Molybdenum layer.
- the silicon nanowire of the embodiments disclosed herein could be made as follows.
- a substrate is provided which comprises silicon having a silicon dioxide surface.
- the surface can be modified to remove an oxide layer with a surface treatment to promote adsorption of a gold nanoparticle, or gold alloys nanoparticle like AuGa.
- a Si substrate preferably have the ⁇ 111 ⁇ plane, (Au is used to create the Si—Au eutectic point and grow the Si nanowire when SiH4 is introduced), the gold nanoparticle can be formed by deposition of a gold layer, followed by removal of the gold layer over regions other than desired location of the gold nanoparticle.
- the silicon nanowire can be grown, for example, by plasma enhanced vapor-liquid-solid growth.
- a catalyst particle typically gold or gold alloy
- EBL electron beam lithography
- Other processes for depositing catalysts, such as electroless plating may also be used.
- the diameters of nanowires after growth are generally determined by the area of the catalyst particles. Therefore, a desired diameter of the nanowire can be synthesized by depositing a catalyst particle with an appropriate size. This step typically determines the functionality of the nanowire pixel because the nanowire diameter should be of an appropriate cross-section area to allow the transmission of light with specific wavelengths and long enough to allow the light absorption and creation of excitons (electron-hole pairs).
- a single nanowire can be grown from the catalyst particle under proper conditions.
- a suitable nanowire can be grown using the vapor-liquid-solid (VLS) process with presence of SiH 4 at, for example, temperature at 650 C and pressure of 200 mTorr.
- VLS vapor-liquid-solid
- a temperature below 450 C is advisable for the integration compatibility of CMOS circuits and nanowire synthesis.
- Many researchers have been able to synthesize silicon nanowires at 430 C or even below 400 C by using some special techniques, for example, using aluminum catalysts or plasma enhanced growth.
- the silicon nanowire can be doped to create a p + -i(intrinsic)-n + structure by introducing B 2 H 6 , H 2 and PH 3 , respectively.
- Nanowires have a higher surface-to-volume ratio than the corresponding bulk materials. Therefore the surface states of nanowires play a more important role in their electronic and optical properties. The impact of nanowire surface states, however, can be minimized by surface passivation after the nanowire synthesis.
- surface passivation can be achieved with a monolayer of materials to react with silicon dangling bonds at the surface of the nanowire. This is accomplished with the formation of stable bonds after reaction.
- passivation has almost no effect on the nanowire physical dimension since it is only one-monolayer thick.
- Subsequent steps could relate to the forming of an epitaxial layer that is n or p doped covering the nanowire or of one or more of the dielectric layers around the nanowire.
- the epitaxial n or p doped layer covering the nanowire could be grown using vapor-phase epitaxy (VPE), a modification of chemical vapor deposition.
- VPE vapor-phase epitaxy
- MBE and LPE liquid-phase epitaxy
- SPE solid-phase epitaxy
- a dopant could be added into the epitaxially grown layer during the epitaxial layer growth process.
- a conformal dielectric coating around the nanowire could be made by chemical vapor deposition (CVD), atomic layer deposition (ALD), oxidation or nitration could be made around the nanowire.
- CVD chemical vapor deposition
- ALD atomic layer deposition
- oxidation or nitration could be made around the nanowire.
- doped glass dielectric layer could be formed on the conformal dielectric coating by plasma enhanced chemical vapor deposition, spin-on coating or sputtering, optionally with an initial atomic layer deposition.
- the deposited doped glass dielectric layer could be etched back by chemical-mechanical planarization or other methods of etching.
- a funnel and a lens on the funnel to channel electromagnetic radiation such as light out of the nanowire waveguide could be made as follows: deposition of a glass/oxide/dielectric layer by CVD, sputter deposition or spin-on coating; application of a photoresist on the deposited glass/oxide/dielectric layer; removal of the photoresist outside an opening centered over the nanowire within the deep cavity; and forming a coupler by semi-isotropic etching in the glass/oxide/dielectric layer.
- Additional steps could relate to the forming of a metal or metal oxide ring layer around the one or more dielectric layers by depositing a metal such a copper on the vertical walls of the one or more dielectric layers.
- the growth process can be varied in known ways to include heterostructures in the nanowires, provide reflective layers etc.
- the stem in some embodiment can be provided by first growing a thin nanowire, depositing a reflective layer or a selective growth mask covering the lower part, and radial growing a cladding layer or increasing the nanowire thickness.
- the nanowire-containing LEDs with optical feedback could be used in an image display device having a large number of identical display elements, generally greater than 1 million, in a grid.
- the embodiments disclosed here would allow the manufacture of such a grid of NWLOF.
- a large plurality of nanostructured LEDs can be provided in one image display device.
- a plurality of nanostructured LEDs can be epitaxially grown on a Zn-doped GaP substrate.
- the nanowires of the LEDs can be of intrinsic GaAs, and provided with a concentric layer of undoped InGaP.
- the volume elements can comprise of Si-doped InGaP.
- the lower parts of the nanowires and the substrate can be covered by a SiO 2 -layer.
- a back plane contact can be provided on the substrate connecting a plurality of LEDs, and each individual LED can be provided with a wrap around contact on the volume elements. The wrap around contacts can be connected for a group-wise addressing of the LEDs.
- the inherent property that nanowires grow in a limited set of preferred directions can be used to grown nanowires in the same direction, or one of a limited set of directions.
- the direction of the grown nanowires could be perpendicular to the substrate or at an angle from the perpendicular to the substrate.
- the LEDs can be arranged to produce fairly directed light beams. Adjacent to the group of LEDs a reflective material can be provided, with an angle to the substrate corresponding to the direction of the LEDs so that the light emitted from the LEDs can be reflected by the reflective material in a desired direction.
- a light emitting surface with different pixels There are three types of pixels, each emitting one color: red, blue or green.
- the display color is constructed from the combination of the three (red, blue and green) colors.
- the eye human views the surface directly through a magnifying lens and thus sees the image.
- the image could change with time to display moving objects and the like.
- the first relates to a display such as TV, computer screen and the like, and the other is to an electronic projector.
- FIG. 4 An illustration of how a chip of the image display device could be partitioned is shown in FIG. 4 to create a system on a chip (SOC).
- the video image from the LED array is focused through a lens and is viewed either directly as in a head mounted display or is projected onto a screen
- the plurality of NWLOFs comprises at least a first active region for emitting a first color, a second active region for emitting a second color, and a third active region for emitting a third color.
- the image display does not include a color filter.
- the image display device could have three chips to produce red, green and blue and the light, respectively, from each chip and to be interleaved by an external circuit and optical system.
- Each chip may only consist of a single color array of LEDs for the ease of manufacturing.
- the plurality of NWLOFs comprises at least a first electrical parameter to control emission of the first color, a second electrical parameter to control emission of the second color, and a third electrical parameter to control emission of the third color.
- the image display comprises a display device, a microdisplay, a computer display, TV and a display system on a chip.
- Such a device could be a system on a chip (SoC) made on a silicon substrate, for example.
- SoC system on a chip
- the display (such as that shown in FIG. 4 ) could be a self contained display device that has the following circuits: a NWLOF grid; a row column addressing circuitry; a video signal processing chain for the photodiode array; a feedback loop circuitry for the bias circuits of the nanowire LED; power supplies and regulation circuits; digital circuits to decode standard video signals; and a thermally sound design that would allow for the management of all heat generated by the device.
- FIG. 2 illustrates a cross sectional diagram of the devices used in creating the sensor of the present invention. This is the result of integration of an active pixel sensor (APS) architecture typically fabricated in CMOS technology with a pinned photodiode device (item12 PPD in FIG. 2 ) using a mixed process technology.
- APS active pixel sensor
- the PPD becomes the photoactive element in an XY-addressable area array.
- the uniformity of the photodiode array is first ensured by dark and uniform illumination of the entire array with an external source while the nano wire LEDs are turned off.
- the gains, the black levels of the three color channels, and whatever other controls available in the circuits are then adjusted to their initial values.
- the pixel to pixel uniformity of the LED array is ensured by setting the loop gain values of the photodiode/LED pair either individually or in mapped groups through an initial calibration process.
- the LED output will retain immunity to temperature variation to the degree that the pinned photodiode allows.
- this approach will mitigate the development of non-uniformity and local or global drift in brightness, including fixed pattern noise due to manufacturing non-uniformity, in the display generated by the LED array during operation.
- the entire processing, memory, control, and driver system may be generally referred to as a controller.
- Various other types of circuitry may also act as the controller, and the embodiment is not limited to a particular circuitry used.
Abstract
Description
- This application is a continuation of U.S. patent application Ser. No. 12/573,582, filed Oct. 5, 2009, now allowed, and is hereby expressly incorporated by reference and each assigned to the assignee hereof.
- PCT International Publication WO 2008/079076, published on Jul. 3, 2008, shows that nanowires can be used for constructing light emitting diodes (LED). Nano-structured LEDs produce light with very high efficiency. They provide a wide range in the choice of materials thereby allowing access to a wide range of wavelengths including red, green and blue light. It is well known, however, that PIN junction LEDs have a light output and wavelength that varies with temperature. Thus, even though the concept of an LED television (TV) is known, the practical application of LEDs for TV has not hitherto been possible.
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FIG. 1 is a schematic of a nanowire-containing light emitting diode (LED) with optical feedback. -
FIG. 2 is a schematic of a pinned photodiode. -
FIG. 3 is a schematic of tessellations for the LED array. -
FIG. 4 is a schematic of a chip partitioned to include the LED array and optical feedback. - In the following detailed description, reference is made to the accompanying drawings, which form a part hereof. In the drawings, similar symbols typically identify similar components, unless context dictates otherwise. The illustrative embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made, without departing from the spirit or scope of the subject matter presented here.
- The term nanowire refers to a structure that has a thickness or diameter of the order of several nanometers, for example, 100 nanometers or less and an unconstrained length. An active nanowire is generally capable of converting photons into excitons. Nanowires could exhibit aspect ratios (length-to-width ratio) of 1000 or more. As such they could be referred to as 1-dimensional materials. Nanowires could have many interesting properties that are not seen in bulk or 3-D materials. This is because electrons in nanowires could be quantum confined laterally and thus occupy energy levels that could be different from the traditional continuum of energy levels or bands found in bulk materials. As a result, nanowires could have discrete values of electrical and optical conductance. Nanowires could include metallic (e.g., Ni, Pt, Au), semiconducting (e.g., Si, InP, GaN, etc.), and insulating (e.g., SiO2, TiO2) materials. Molecular nanowires are composed of repeating molecular units either organic or inorganic. Examples of nanowires include inorganic molecular nanowires (Mo6S9-xIx, Li2Mo6Se6), which could have a diameter of 0.9 nm, and can be hundreds of micrometers long. Other examples are based on semiconductors such as InP, Si, GaN, etc., dielectrics (e.g. SiO2, TiO2), or metals (e.g. Ni, Pt). An active-pixel sensor (APS), also commonly written active pixel sensor, is an image sensor consisting of an integrated circuit containing an array of pixel sensors, each pixel containing a photodetector and an active amplifier. A passive-pixel sensor is a pixel sensor without its own amplifier.
- The term excitons refers to electron-hole pairs.
- An active element is any type of circuit component with the ability to electrically control electron and/or hole flow (electricity controlling electricity or light, or vice versa). Components incapable of controlling current by means of another electrical signal are called passive elements. Resistors, capacitors, inductors, transformers, and even diodes are all considered passive elements. Active elements include in embodiments disclosed herein, but are not limited to, an active nanowire, an active waveguide, transistors, silicon-controlled rectifiers (SCRs), light emitting diodes, and photodiodes.
- A waveguide is a system or material designed to confine and direct electromagnetic radiation of selective wavelengths in a direction determined by its physical boundaries. Preferably, the selective wavelength is a function of the diameter of the waveguide. An active waveguide is a waveguide that has the ability to electrically control electron and/or hole flow (electricity controlling electricity or light, or vice versa). This ability of the active waveguide, for example, is one reason why the active waveguide could be considered to be “active” and within the genus of an active element.
- An optical pipe is an element to confine and transmit an electromagnetic radiation. The optical pipe can include a core and a cladding. The core could be a nanowire. The optical pipe could be configured to separate wavelengths of an electromagnetic radiation beam at a selective wavelength through the core and the cladding, wherein the core is configured to be both a channel to transmit the wavelengths up to the selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the core. A core and a cladding are generally complimentary components of the optical pipe and are configured to separate wavelengths of an electromagnetic radiation beam at a selective wavelength through the core and cladding.
- A photogate is a gate used in an optoelectronic device. Typically the photogate comprises a metal-oxide-semiconductor (MOS) structure. The photogate controls the accumulation of photons generated charges during the integration time of the photodiode and controls the transfer of charges when integration is over. A photodiode comprises a pn junction, however, a photogate can be placed on any type semiconductor material. A vertical photogate is a new structure. Normally, photogates are placed horizontally on planar photodiode devices. In a nanowire device, however, the photogate can be formed in a vertical direction. That is, the photogate can be oriented standing up covering the lateral surface of the nanowire.
- A transfer gate is a gate of a switch transistor used in a pixel. The transfer gate's role is to transfer the charges from one side of a device to another. In some embodiments, the transfer gate is used to transfer the charges from the photodiode to the sensing node (or floating diffusion).
- A reset gate is a gate used for resetting a device. In some embodiments, the reset gate is the sense node that is formed by an n+ region. Reset means to restore to original voltage level set by a certain voltage. In some embodiments, the voltage of the reset drain (RD) is the voltage used as a reset level. Reset means to clear any pending errors or events and bring a system to normal condition or initial state, usually in a controlled manner. Rest is usually done in response to an error condition or completion of events when it is impossible or undesirable for a processing activity to proceed. The ability for an electronic device to be able to reset itself in case of error, abnormal power loss or completion of events could be an aspect of embedded system design and programming.
- An intrinsic semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors, the number of excited electrons and the number of holes are equal: n=p. The conductivity of intrinsic semiconductors can be due to crystal defects or to thermal excitation. In an intrinsic semiconductor, the number of electrons in the conduction band is equal to the number of holes in the valence band.
- A SOC (system on a chip) is a single integrated circuit, i.e., a processor, a bus, and/or other elements on a single monolithic substrate. A system on a chip may include a configurable logic unit. The configurable logic unit may include a processor, interface, and a programmable logic on the same substrate. A system-on-chip IC may include various reusable functional blocks, such as microprocessors, interfaces, memory arrays, and DSPs (digital signal processors). Such pre-designed functional blocks are commonly called cores. Generally, the SOC may include a plurality of cores in a single chip. The cores embedded in the SOC may be separately designed and tested before being combined in a chip. SOCs may have significant advantages over electronic systems created on boards with discrete components. An integrated circuit having an SOC is generally much smaller than a circuit board based system. The reduction in size afforded by SOCs also may lead to improvements in power consumption and device speed. SOCs may combine fixed and programmable intellectual property cores with custom logic and memory, connected through a bus, on a single piece of silicon, thereby greatly reducing its overall cost.
- A chip is a semiconducting material (usually silicon) on which an integrated circuit is embedded. A typical chip can contain millions of electronic components (transistors). There are different types of chips. For example, CPU chips (also called microprocessors) contain an entire processing unit, whereas memory chips contain blank memory.
- An integrated circuit (also known as IC, microchip, silicon chip, computer chip or chip) is a device that may include many electronic components (transistors, capacitors, resistors, diodes, and other circuit components). These components are often interconnected to form multiple circuit components (e.g., gates, cells, memory units, arithmetic units, controllers, decoders, etc.) on the IC. An example of an integrated circuit is a central processing unit (CPU) in a computer. An integrated circuit may implement one or more cores that perform the various functions of the integrated circuit as well as circuitry for communicating with other integrated circuits and devices external to the integrated circuit. Integrated circuits typically comprise a semiconductor substrate on which several component layers have been formed to produce a large number of laterally-distributed transistors and other circuit devices. Additional connection layers may be formed on top of the component layers to provide interconnections among and power to the circuit devices, and input and output signal connections to the devices. An integrated circuit is generally fabricated utilizing a chip of silicon or other semiconductor material, also referred to as a die. The die consists of a substrate composed of a semiconductor material such as silicon or germanium. One side of the substrate may be provided with a plurality of circuit structures that makeup the integrated circuit and the other may be left as relatively bare substrate material that is normally planarized via a polishing step. A die is typically installed in a package, and electrically connected to leads of the package. A hybrid integrated circuit is a miniaturized electronic circuit constructed of individual semiconductor devices, as well as passive components, bonded to a substrate or circuit board. Integrated circuits can be classified into analog integrated circuits, digital integrated circuits and mixed signal integrated circuits (both analog and digital on the same chip).
- A digital signal processor (DSP) is a specialized microprocessor designed specifically for digital signal processing such as video signal processing, generally in real-time computing. Digital signal processing algorithms typically require a large number of mathematical operations to be performed quickly on a set of data. Signals are converted from analog to digital, manipulated digitally, and then converted again to analog form.
- A PN junction is a junction formed by combining p-type and n-type semiconductors together in very close contact. A PIN junction is a junction formed by combining a lightly doped ‘near’ intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor regions. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts.
- The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region between the p-type and n-type blocks.
- An embodiment relates to a nanostrucuted LED with an optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. The nanostructured LED in one example implementation, may further comprise a volume element epitaxially connected to the nanowire. The volume element could provide a high doping degree for the formation of the active region, typically within or close to the nanowire, with or without requiring the nanowire itself to be doped. Preferably, the nanostructured LED without optical feedback would be the combination of the substrate, the nanowire and a volume element, wherein a portion of the nanowire and a portion of the volume element are configured to form the active region. The volume element could be a cylindrical bulb, but is not limited to a cylindrical bulb with a dome-shaped top, a spherical/ellipsoidal, and pyramidal. The volume element can extend in three dimensions; can have a large volume, and a large surface. The volume element/nanowire architecture enhances both electrical and optical performance of a LED. By using different material compositions in the nanowire and the volume element, the nanowire material composition can be chosen to propagate into the volume element in order to decrease the optical disturbance by the connection with the nanowire.
- The nanostructured LED of an embodiment may include a PN or PIN-junction that could produce an active region to produce light within the structure during use. The nanowire, a part of the nanowire, or a structure in connection with the nanowire, could form a waveguide directing at least a portion of the light produced in the active region in a given direction.
- The nanowire and the volume element could be embedded in a low index material like SiO2. In one possible implementation the low index region (e.g., a cover layer) is in turn enclosed by a cylindrical ring of metal to provide optical isolation of the each LED from its neighbors. This metal ring may also aid in the local removal of heat generated by each LED.
- A nano-structured LED makes it possible to use a very large fraction of the light produced by the LED. This is at least partly achieved by the nanowire being used as a waveguide, directing the light produced in the junction out of the surface.
- The use of the nanowire as a waveguide offers a possibility to direct light in well defined directions. By using concepts from the area of fiber optics light beams can be focused, or dispersed, depending on the intended use. In this case a concave surface on the nanowire and the silica surrounding it would help provide a focused beam of light suitable for a display system.
- The nanowire technology offers possibilities in choices of materials and material combinations not possible in conventional bulk layer techniques. This could be used in the nano-structured LED to provide LEDs producing light in wavelength regions not accessible by conventional techniques, for example violet and UV.
- The nano-structured LED allows for inclusions of heterostructures as well as areas of different doping within the nanowire, facilitating optimization of electrical and/or optical properties.
- In embodiments herein that require precise control of the light output of an LED or the uniformity of multiple LEDs, arranged in a two dimensional grid for display purposes, an optical feedback loop to create a uniformity of light emission is highly desirable. Such a feedback loop would include an optical sensor to measure a fraction of the light output of the LED in real time and an electronic circuit to use the measurement to adjust the operating point of the LED.
- An embodiment could include a nano-structured LED grown on a substrate that already has an embedded photodiode such as pinned photodiode. The light from the nano-structured LED is partially transmitted to the substrate where a photodiode measures and provides a signal proportional to the intensity of the light generated by the LED. This signal in turn is used in a feedback loop to control the bias point of the LED such that a stable light output is maintained at the desired intensity.
- The nanowire-containing LED with optical feedback (NWLOF) could further comprise a partially reflective layer on the substrate surrounding and/or within the nanowire, wherein the partially reflective layer is configured to allow a first portion of the light to transmit through the partially reflective layer to the optical sensor and to allow at least a second portion of the light to reflect from a surface of the partially reflective layer.
- The NWLOF could further comprise one or more cladding layers surrounding the nanowire, wherein the one or more cladding layers are configured such that the nanowire is configured to form a waveguide. The NWLOF could further comprise a low-index material having a lower refractive index surrounding the nanowire and a metal layer surrounding the low-index material.
- The NWLOF could further comprise a volume element, wherein a portion of the nanowire and a portion of the volume element are configured to form the active region.
-
FIG. 1 provides an example implementation of this concept. The LED could be composed of the p region in the substrate over which it is grown, the intrinsic nanowire made out of any of the suitable materials listed above and an n type epitaxial region surrounding and contacting the nanowire. A photodiode is embedded into the substrate on which the nanowire is grown. An example of a pinned photodiode is illustrated inFIG. 2 . - In embodiments herein, there are a variety of possible implementations of photodiodes and nano-structured LEDs.
FIG. 1 is an example implementation. Another possible implementation (not shown inFIG. 1 ) would place the LED on the back side of the substrate containing the photodiode. This would require thinning the substrate such that photons from the LED can easily be collected by the potential well (the n+ region inFIG. 1 ) of the photodiode. - A nanostructured LED according to the embodiments comprises of an upstanding nanowire. For the purpose of this application an upstanding nanowire should be interpreted as a nanowire protruding from the substrate in some angle, the upstanding nanowire for example being grown from the substrate, preferably by as vapor-liquid-solid (VLS) grown nanowires. The angle with the substrate will typically be a result of the materials in the substrate and the nanowire, the surface of the substrate and growth conditions. By controlling these parameters it is possible to produce nanowires pointing in only one direction, for example vertical, or in a limited set of directions. For example nanowires and substrates of zinc-blende and diamond semiconductors composed of elements from columns III, V and IV of the periodic table, such nanowires can be grown in the [111] directions and then be grown in the normal direction to any {111} substrate surface. Other directions given as the angle between normal to the surface and the axial direction of the nanowire include 70, 53° {111}, 54, 73° {100}, and 35, 27° and 90°, both to {110}. Thus the nanowires define one, or a limited set, of directions.
- According to the embodiments, a part of the nanowire or structure formed from the nanowire could be used as a waveguide directing and confining at least a portion of the light created in {in or from/out of?} the nanostructured LED in a direction given by the upstanding nanowire. The waveguiding nanostructured LED structure could include a high refractive index nanowire with one or more surrounding cladding with refractive indices less than that of the core. The structure could be either circular symmetrical or close to being circular symmetrical. Light waveguiding in circular symmetrical structures are well know for fiber-optic applications and many parallels can be made to the area of rare-earth-doped fiber optic devices. However, one difference is that fiber amplifier are optically pumped to enhance the light guided through them while the described nanostructured LED can be seen as an efficient light to electricity converter and vice versa.
- Preferably, an output of the optical sensor is an input to the electronic circuit. Preferably, the electrical parameter comprises voltage or current. Preferably, the electronic circuit is configured to control voltage or current such that the light output is maintained substantially constant irrespective of a temperature of the active region within an operating temperature range of the active region. Preferably, the optical sensor comprises a pn or p-i-n photodiode having a performance characteristic that is substantially insensitive to a temperature in an operating temperature range of the active region. Preferably, at least a portion of the light produced in the active region is directed in a direction given by the nanowire. Preferably, the nanowire is configured to both produce light and form a waveguide.
- Preferably, the volume element comprises a doping layer configured to provide a p or n region and a well layer. Preferably, the optical sensor comprises a pinned photodiode in the substrate. Preferably, the one or more cladding layers are configured to provide a graded refractive index such that a refractive index of the nanowire is higher than that of the one or more cladding layer. Preferably, the NWLOF comprises a plurality of the nanowires comprising different materials emit different ranges of wavelengths of the light. Preferably, the NWLOF comprises a plurality of the nanowires comprising different diameters that form waveguides for different ranges of wavelengths of the light. Preferably, the NWLOF comprises a plurality of the nanowires comprising different materials emit different ranges of wavelengths of the light and the NWLOF comprises a plurality of the nanowires comprising different diameters that form waveguides for different ranges of wavelengths of the light. Preferably, the nanowire and the volume element are arranged to direct the light through the nanowire and the substrate such that the light is emitted from a second side of the substrate opposite the first side. Preferably, The substrate contains a photodiode that is optically coupled to the nanowire. Preferably, the volume element is configured to spread the light by dispersion at a junction between the nanowire and the volume element. Preferably, the electronic circuit comprises a controller configured to calibrate the electrical parameter. Preferably, the controller comprises memory, the memory comprising values for controlling the electrical parameter so that the light output is set by the values stored in the memory. Preferably, the controller comprises memory; wherein the controller is configured to calibrate the electrical parameter to cause the light output to more closely match a target output based on target values of the light output stored in the memory. Preferably, the target values represent current values for different colors of the light. Preferably, the target values represent target brightness levels.
- The waveguiding properties of the nanowire can be improved in different ways. The nanowire could have a first effective refractive index, nw, and a cladding surrounding at least a portion of the nanowire could have a second effective refractive index, nc, and by assuring that the first refractive index is larger than the second refractive index, nw>nc, good wave-guiding properties could be provided to the nanowire. The waveguiding properties may be further improved by introducing an optically active cladding.
- The high index material in the nanowire could, for example, be silicon nitride having a refractive index of about 2.0. The lower index cladding layer material could, for example, be a glass, for example a material selected from Table I, having a refractive index about 1.5.
-
TABLE I Typical Material Index of Refraction PESiN 2.00 PESiO 1.46 SiO2 1.46 - In Table I, PESiN refers to plasma enhanced Si3N4 and PESiO refers to plasma enhanced SiO2.
- For a LED operating in different wavelengths from the visible to the IR and deep in the micrometer wavelengths, a variety of materials can be used, such as: Si, GaAs (p), InAs, Ge, ZnO, InN, GaInN, GaN AlGaInN, InP, InAsP, GalnP, InGaP:Si, InGaP:Zn, GaInAs, AlInP, GaAlInP, GaAlInAsP, GaInSb, InSb among others. To create CMOS circuits, Si and doped Si materials are preferable.
- In one embodiment, the typical values of the refractive indexes for III-V semiconductor nanowire material are in the range from 2.5 to 5.5 when combined with glass type of cladding material (such as SiO2 or Si3N4) having refractive indexes ranging from 1.4 to 2.3, satisfying the waveguiding requirement, nw>nc.
- One consideration in the optimization of light extraction is to make the Numerical Aperture (NA) vary along the nanowire structure to optimize light extraction from the structure. In general, it is ideal to have the NA be highest when the light generation takes place furthest away from the exit location. This will maximize the light captured and guided toward the exit. In contrast, closer to the exit end of the structure, the NA can be made smaller since light generated will radiate in random directions and most of the radiate light will hit the top and side of the top part of the structure and exit. Having a lower NA in the top part of the structure also minimizes the light captures and guide back down through the structure that may not be ideal unless a reflector is inserted in the bottom of the structure. A low NA can be obtained by surrounding the III-V nanowire core with another III-V cladding of different composition with slightly less refractive index.
- A nanostructured LED according to the embodiments could comprise a substrate and a nanowire epitaxially grown from the substrate in a defined angle θ. A portion of the nanowire is enclosed by a volume element. The volume element is preferably epitaxially connected to the nanowire. A portion of or all of the nanowire could be arranged to act as a waveguiding portion directing at least a portion of the impinging light in a direction given by the elongated direction of the nanowire, and will be referred to as a waveguide. The nanowire could have a diameter in the order of 50 nm to 500 nm. The length of the nanowire could be of the order of 1 to 10 μm. The pn-junction results in an active region arranged in the nanowire.
- The materials of the different members of the nanostructured LED are chosen so that the nanowire will have good waveguiding properties vis-a-vis the surrounding materials, i.e. the refractive index of the material in the nanowire should preferably be larger than the refractive indices of the surrounding materials.
- If the nanowire has a first refracting index, nw, the material surrounding the nanowire in wave guide portion, typically a cover layer, a second refractive index, nc, and the a volume element, a third refractive then nve, then nw>nc and nw>nve. Typical values for the nanostructured LED are nw˜4, nc˜1.5 and nve˜3.
- In addition, the nanowire may be provided with one or more layers. A first layer may be introduced to improve the surface properties (i.e., reduce charge leakage) of the nanowire. Further layers, for example an optical layer may be introduced specifically to improve the waveguiding properties of the nanowire, in manners similar to what is well established in the area of fiber optics. The optical layer typically has a refractive index in between the refractive index of the nanowire and the surrounding cladding region material. Alternatively the intermediate layer has a graded refractive index, which has been shown to improve light transmission in certain cases. If an optical layer is utilized, the refractive index of the nanowire, nw, should define an effective refractive index for both the nanowire and the layers.
- The ability to grow nanowires with well defined diameters could be to optimize the waveguiding properties of the nanowire with regards to the wavelength of the light confined in the nanostructured LED. The diameter of the nanowire could be chosen so as to have a favorable correspondence to the wavelength of the desired light. Preferably the dimensions of the nanowire are such that a uniform optical cavity, optimized for the specific wavelength of the produced light, is provided along the nanowire. The nanowire generally is sufficiently wide to capture the desired light. A rule of thumb would be that diameter must be larger than λ/2nw, wherein λ is the wavelength of the desired light and nw is the refractive index of the nanowire. As an example a diameter of about 60 nm may be appropriate to confine blue light only and one 80 nm may be appropriate for to confine both blue and green light in a silicon nanowire.
- In the infrared and near infrared a diameter above 100 nm would be sufficient. An approximate preferred upper limit for the diameter of the nanowire is given by the growth constrains, and could be in the order of 500 nm. The length of the nanowire is typically and preferably in the order of 1-10 μm, providing enough volume for the active region.
- A reflective layer could be in one embodiment, provided on the substrate and extending under the wire. The reflective layer is preferably provided in the form of a multilayered structure comprising repeated layers of silicates for example, or as a metal film.
- An alternative approach to getting a reflection in the lower end of the nanowire could be to arrange a reflective layer in the substrate underneath the nanowire. Yet another alternative could be to introduce reflective means within the waveguide. Such reflective means can be a multilayered structure provided during the growth process of the nanowire, the multilayered structure comprising repeated layers of for example SiNx/SiOx (dielectric) or GaAs/AlGaAs (semiconductor). Such repeated layers with controlled thickness could also serve as optical grating filters to precisely control the output wavelength of the LED to mitigate wavelength drift for example with temperature.
- In a further embodiment, a major part of the produced light is directed by the waveguide of the nanowire in a downward direction through the substrate. The light can be directed through the entire thickness of the substrate, or alternatively the substrate could be provided with a cut out beneath the base of the nanowire in order to reduce the thickness of the substrate and thereby reduce the scattering or absorption of light in the substrate. The substrate is preferably made of transparent material. A portion, or preferably the entire outer surface of the volume element may be covered by a reflective layer that increases the radiation of the produced light through the waveguide. The reflective layer, for example formed of a metal, may additionally serve as a contact. Part of the nanowire and the substrate could optionally covered by a protective layer of SiC or SiN, for example.
- In an embodiment, the volume element can be arranged to be a dispersive element, giving a light radiation that is essentially evenly distributed over a wide angle. Such device can be well suited for illuminating purposes wherein an even illumination is required. The active region may be arranged in the nanowire but alternatively may be within the volume element, and above the upper end of the nanowire, or radially outwards of the nanowire and possibly above. The nanowire should preferably at its lower end be provided with some of the reflective means, for example a reflective material within the nanowire, in order to redirect light upwards. The geometry of the volume element can be designed to further disperse the light. Dispersion is provided at the junction between the nanowire waveguide and the volume element and further at the edge formed by the upper boundary of the volume element. The height and width of the volume element can be chosen so that the edge disperses light further. One embodiment can be optimized for providing a collected and directionally oriented beam. The nanowire of relatively large diameter, preferably above 150 nm, can extend to the upper surface of the volume element. The nanowire can be provided with a concave lens like exit surface on the upper end.
- Nanowires, acting as waveguides, can be used to improve the performance of conventional planar LEDs. In an embodiment, a plurality of nanowires can be arranged on the surface of a planar LED. Light is produced in the active region, which could be an active layer of the planar LED, for example of GaAsP. The nanowires can be epitaxially connected on top of the planar LED layers in order to get a good matching of the different parts. The nanowires may be coated by a cladding layer protecting the nanowires and/or improving the properties, for example Si3N4. The surface in between the nanowires can be preferably coated with a reflective layer, for example of Au. At least a part of the light, produced in the active region, could enter the nanowires that are acting as waveguides and leading the light away from the substrate plane.
- Depending on the intended use of the nanostructured LED, availability of suitable production processes and cost for materials etc., a wide range of materials can be used for the different parts of the structure. Suitable materials for LED have to be matched with suitable materials for the photo diodes based on the wavelength of the light being emitted/detected by the system. Both the LED and the photo diode should work as intended in the wavelength range of light for which the system is configured to operate.
- In addition, the nanowire based technology allows for defect free combinations of materials that otherwise would be impossible to combine. The III-V semiconductors are of particular interest due to their properties facilitating high speed and low power electronics. Suitable materials for the substrate include, but is not limited to: Si, GaAs, GaP, GaP:Zn, InAs, InP, GaN, Al2O3, SiC, Ge, GaSb, ZnO, InSb, SOI (silicon-on-insulator), CdS, ZnSe, CdTe. In the case of the present invention (i.e. for creating display structure in the visible light), a Si substrate is preferred since it embeds a CMOS photodiode underneath the LED. For wavelengths between blue and near IR, Si could be used in the photo diode. For wavelengths outside the range of light detected by Si, such as IR or UV light, it is possible to use GaAs in photodiodes for LED in the range of 800-1500 nm, e.g., 850 nm; and InGaAs/InP in the range 1310-1550 nm.
- Suitable materials for the nanowire include, but is not limited to: Si, GaAs (p), InAs, Ge, ZnO, InN, GaInN, GaN AlGaInN, BN, InP, InAsP, GalnP, InGaP:Si, InGaP:Zn, GaInAs, AlInP, GaAlInP, GaAlInAsP, GaInSb, InSb. For this application the nano wire materials are carefully selected from the list above and the Table 1 below to produce red, green and blue light.
-
TABLE 1 List of band gaps Band gap (eV) @ Material Symbol 300K Silicon Si 1.11 Selenium Se 1.74 Germanium Ge 0.67 Silicon carbide SiC 2.86 Aluminum phosphide AlP 2.45 Aluminium arsenide AlAs 2.16 Aluminium antimonide AlSb 1.6 Aluminium nitride AlN 6.3 Diamond C 5.5 Gallium(III) phosphide GaP 2.26 Gallium(III) arsenide GaAs 1.43 Gallium(III) nitride GaN 3.4 Gallium(II) sulfide GaS 2.5 (@ 295K) Gallium antimonide GaSb 0.7 Indium(III) nitride InN 0.7 Indium(III) phosphide InP 1.35 Indium(III) arsenide InAs 0.36 Zinc oxide ZnO 3.37 Zinc sulfide ZnS 3.6 Zinc selenide ZnSe 2.7 Zinc telluride ZnTe 2.25 Cadmium sulfide CdS 2.42 Cadmium selenide CdSe 1.73 Cadmium telluride CdTe 1.49 Lead(II) sulfide PbS 0.37 Lead(II) selenide PbSe 0.27 Lead(II) telluride PbTe 0.29 Copper(II) oxide CuO 1.2 - The relationship between wavelength and bandgap energy may be obtained from:
-
- Where E is the energy, v is the frequency, λ is the wavelength of a photon, h is Planck's constant, and c is the Speed of light. For quick calculations, this reduces to
-
- A stream of photons with a wavelength of 532 nm (green light) would have an energy of approximately 2.33 eV. Similarly, 1 eV would correspond to a stream of infrared photons of wavelength 1240 nm, and so on.
- 1 eV=8065.5447 cm−1
- Possible donor dopants for example include GaP, Te, Se, S, etc, and acceptor dopants for the same material are Zn, Fe, Mg, Be, Cd, etc. It should be noted that the nanowire technology makes it possible to use nitrides such as SiN, GaN, InN and AlN, which facilitates fabrication of LEDs detecting light in wavelength regions not easily accessible by conventional technique. Other combination of particular commercial interest include, but is not limited to GaAs, GalnP, GaAlInP, GaP systems. Typical doping levels range from 1×1018 cm−3 to 1×1020 cm−3.
- The appropriateness of low resistivity contact materials are dependent on the material to be deposited on, but metal, metal alloys, as well as non-metal compounds, like: Al, Al—Si, TiSi2, TiN, W, MoSi2, PtSi, CoSi2, WSi2, In, AuGa, AuSb, AuGe, PdGe, Ti/Pt/Au, Ti/Al/Ti/Au, Pd/Au, ITO (InSnO), etc. and combinations of, e.g., metal and ITO can be used.
- The substrate could be an integral part of the device, since it also contains the photodiodes necessary to detect light that has not been confined to the nanowire. For this application, the substrate in addition also contains standard CMOS circuits to control the biasing, amplification and readout of the LED as well as any other CMOS circuit deemed necessary and useful. The substrate includes substrates having active devices therein. Suitable materials for the substrates include silicon and silicon-containing materials. Generally, each sensor element of the embodiment includes a nanostructured LED structure comprising a nanowire, a cladding enclosing at least a portion of the nanowire, a coupler and two contacts. Similarly, for light in higher wavelengths, GaAs circuitry can be used with the appropriate light emitting materials for those wavelengths.
- In one embodiment, a micro lens could be located on the LED, for example, as shown in
FIG. 1 . The micro lens may comprise any of several optically transparent lens materials that are known in the art. Non-limiting examples include optically transparent inorganic materials, optically transparent organic materials and optically transparent composite materials. Most common are optically transparent organic materials. Typically the lens layers could be formed incident to patterning and reflow of an organic polymer material that has a glass transition temperature lower than the series of color filter layers, if present, or the patterned planarizing layer. Polymeric materials should preferably have a high degree of stability with temperature to act as micro lenses for LEDs since this device needs to perform at high temperatures. The micro lens ofFIG. 1 does not require a new material; simply patterning the clad material to the right shape forms it. - A method of fabricating nanostructured LED is to first grow a nanowire. Part of the nanowire could then be masked and the volume element could be grown selectively. The volume element grows both axially and radial, hence, when the nanowire is masked partly, the nanowire becomes enclosed in the volume element. Appropriate masking materials are e.g. silicon nitride, silicon oxide etc.
- Considering systems where nanowire growth is locally enhanced by a substance, as VLS grown nanowires, the ability to alter between radial and axial growth by altering growth conditions enables the procedure (nanowire growth, mask formation, and subsequent selective growth) and can be repeated to form nanowire/3D-sequences of higher order. For systems where the nanowire growth and selective growth are not distinguished by separate growth conditions it may be better to first grow the nanowire along the length and by different selective growth steps grow different types of 3D regions or volume elements.
- According to the present invention, in order to fabricate a light emitting pn diode/array with active nanowire region(s) formed of GaAs and InGaP, comprises the steps of: Preferably, the substrate could be Si containing the photodiode. Subsequently, to grow a GaAs nano wire, for example, one could lay down an epitaxial layer of p+GaP on the silicon substrate.
- 1. Defining of local catalyst/catalysts on a p+GaP substrate by lithography.
- 2. Growing GaAs nanowire from local catalyst. The growth parameters adjusted for catalytic wire growth.
- 3. Radial growing of thin InGaP concentric layer around the nanowire (cladding layer).
- 4. Depositing of SiO2 as mask material.
- 5. Back etching of mask to open up the upper parts of the nanowires.
- 6. Selective growing of n+InGaP volume element. The growth parameters adjusted to give radial growth.
- 7. Forming contacts on the volume element and to the substrate.
- In the embodiments herein, silicon nanowires (NW) could be grown on a layer of silicon. The process could apply for growing Si NW on dielectric layer, or for III-V compound grown on the appropriate substrate, including Si substrate with or without a thin Molybdenum layer.
- The silicon nanowire of the embodiments disclosed herein could be made as follows. A substrate is provided which comprises silicon having a silicon dioxide surface. The surface can be modified to remove an oxide layer with a surface treatment to promote adsorption of a gold nanoparticle, or gold alloys nanoparticle like AuGa. Onto this modified surface, preferably a Si substrate have the {111} plane, (Au is used to create the Si—Au eutectic point and grow the Si nanowire when SiH4 is introduced), the gold nanoparticle can be formed by deposition of a gold layer, followed by removal of the gold layer over regions other than desired location of the gold nanoparticle. The silicon nanowire can be grown, for example, by plasma enhanced vapor-liquid-solid growth. In a first step, a catalyst particle (typically gold or gold alloy) may be deposited on top of the substrate by either a standard electron beam lithography (EBL) process or using self-assembly of prefabricated catalyst colloids. Other processes for depositing catalysts, such as electroless plating may also be used.
- The diameters of nanowires after growth are generally determined by the area of the catalyst particles. Therefore, a desired diameter of the nanowire can be synthesized by depositing a catalyst particle with an appropriate size. This step typically determines the functionality of the nanowire pixel because the nanowire diameter should be of an appropriate cross-section area to allow the transmission of light with specific wavelengths and long enough to allow the light absorption and creation of excitons (electron-hole pairs).
- A single nanowire can be grown from the catalyst particle under proper conditions. Using silicon as an example, a suitable nanowire can be grown using the vapor-liquid-solid (VLS) process with presence of SiH4 at, for example, temperature at 650 C and pressure of 200 mTorr. A temperature below 450 C is advisable for the integration compatibility of CMOS circuits and nanowire synthesis. Many researchers have been able to synthesize silicon nanowires at 430 C or even below 400 C by using some special techniques, for example, using aluminum catalysts or plasma enhanced growth. During the VLS process, the silicon nanowire can be doped to create a p+-i(intrinsic)-n+ structure by introducing B2H6, H2 and PH3, respectively.
- Nanowires have a higher surface-to-volume ratio than the corresponding bulk materials. Therefore the surface states of nanowires play a more important role in their electronic and optical properties. The impact of nanowire surface states, however, can be minimized by surface passivation after the nanowire synthesis. Typically, surface passivation can be achieved with a monolayer of materials to react with silicon dangling bonds at the surface of the nanowire. This is accomplished with the formation of stable bonds after reaction. Advantageously, passivation has almost no effect on the nanowire physical dimension since it is only one-monolayer thick.
- Subsequent steps could relate to the forming of an epitaxial layer that is n or p doped covering the nanowire or of one or more of the dielectric layers around the nanowire.
- The epitaxial n or p doped layer covering the nanowire could be grown using vapor-phase epitaxy (VPE), a modification of chemical vapor deposition. Molecular-beam epitaxy, liquid-phase epitaxy (MBE and LPE) and solid-phase epitaxy (SPE) could also be used. In each of these processes, a dopant could be added into the epitaxially grown layer during the epitaxial layer growth process.
- A conformal dielectric coating around the nanowire, if needed, could be made by chemical vapor deposition (CVD), atomic layer deposition (ALD), oxidation or nitration could be made around the nanowire. Then, doped glass dielectric layer could be formed on the conformal dielectric coating by plasma enhanced chemical vapor deposition, spin-on coating or sputtering, optionally with an initial atomic layer deposition. The deposited doped glass dielectric layer could be etched back by chemical-mechanical planarization or other methods of etching.
- In one embodiment, a funnel and a lens on the funnel to channel electromagnetic radiation such as light out of the nanowire waveguide could be made as follows: deposition of a glass/oxide/dielectric layer by CVD, sputter deposition or spin-on coating; application of a photoresist on the deposited glass/oxide/dielectric layer; removal of the photoresist outside an opening centered over the nanowire within the deep cavity; and forming a coupler by semi-isotropic etching in the glass/oxide/dielectric layer.
- Additional steps could relate to the forming of a metal or metal oxide ring layer around the one or more dielectric layers by depositing a metal such a copper on the vertical walls of the one or more dielectric layers.
- The growth process can be varied in known ways to include heterostructures in the nanowires, provide reflective layers etc. The stem in some embodiment can be provided by first growing a thin nanowire, depositing a reflective layer or a selective growth mask covering the lower part, and radial growing a cladding layer or increasing the nanowire thickness.
- The nanowire-containing LEDs with optical feedback could be used in an image display device having a large number of identical display elements, generally greater than 1 million, in a grid. The embodiments disclosed here would allow the manufacture of such a grid of NWLOF.
- In some implementations a large plurality of nanostructured LEDs can be provided in one image display device. A plurality of nanostructured LEDs can be epitaxially grown on a Zn-doped GaP substrate. The nanowires of the LEDs can be of intrinsic GaAs, and provided with a concentric layer of undoped InGaP. The volume elements can comprise of Si-doped InGaP. The lower parts of the nanowires and the substrate can be covered by a SiO2-layer. A back plane contact can be provided on the substrate connecting a plurality of LEDs, and each individual LED can be provided with a wrap around contact on the volume elements. The wrap around contacts can be connected for a group-wise addressing of the LEDs.
- In one embodiment the inherent property that nanowires grow in a limited set of preferred directions, as discussed above, can be used to grown nanowires in the same direction, or one of a limited set of directions. The direction of the grown nanowires could be perpendicular to the substrate or at an angle from the perpendicular to the substrate. Preferably the LEDs can be arranged to produce fairly directed light beams. Adjacent to the group of LEDs a reflective material can be provided, with an angle to the substrate corresponding to the direction of the LEDs so that the light emitted from the LEDs can be reflected by the reflective material in a desired direction.
- Additional features of the image display devices disclosed herein are: (1) A light emitting surface with different pixels. There are three types of pixels, each emitting one color: red, blue or green. The display color is constructed from the combination of the three (red, blue and green) colors. The eye (human) views the surface directly through a magnifying lens and thus sees the image. The image could change with time to display moving objects and the like. (2) There could be the same pixel configuration as in feature (1), but the light emitted from the surface is focused through a lens, and then the final image is displayed on a non-active surface such as a screen. Both cases are viable embodiments. The first relates to a display such as TV, computer screen and the like, and the other is to an electronic projector. An illustration of how a chip of the image display device could be partitioned is shown in
FIG. 4 to create a system on a chip (SOC). The video image from the LED array is focused through a lens and is viewed either directly as in a head mounted display or is projected onto a screen - Preferably, the plurality of NWLOFs comprises at least a first active region for emitting a first color, a second active region for emitting a second color, and a third active region for emitting a third color. Preferably, the image display does not include a color filter.
- Optionally, the image display device could have three chips to produce red, green and blue and the light, respectively, from each chip and to be interleaved by an external circuit and optical system. Each chip may only consist of a single color array of LEDs for the ease of manufacturing.
- Preferably, the plurality of NWLOFs comprises at least a first electrical parameter to control emission of the first color, a second electrical parameter to control emission of the second color, and a third electrical parameter to control emission of the third color. Preferably, the image display comprises a display device, a microdisplay, a computer display, TV and a display system on a chip.
- According to embodiments herein, it is possible to manufacture a device that has other complex circuits besides the NWLOF. Such a device could be a system on a chip (SoC) made on a silicon substrate, for example.
- For example, the display (such as that shown in
FIG. 4 ) could be a self contained display device that has the following circuits: a NWLOF grid; a row column addressing circuitry; a video signal processing chain for the photodiode array; a feedback loop circuitry for the bias circuits of the nanowire LED; power supplies and regulation circuits; digital circuits to decode standard video signals; and a thermally sound design that would allow for the management of all heat generated by the device. Once this SoC is accomplished, it would now be possible to design a single chip display system that requires nothing other than a lens to operate as display SoC. - These are the major circuit blocks required for a display chip:
-
- 1) A nano wired LED array in a tessellation described in
FIG. 3 . - 2) Row column decode circuitry to individually address an LED and its associated photodiode or to a mapping of a group of contiguous LEDs to a single photodiode.
- 3) A major analog circuit block to provide the Video Signal Processing Chain for read out of photodiode array to provide the input to the controller circuit, the controller circuit itself being for stabilizing the light output of the LED array individually or in groups, power supplies and regulators for the LED array and the photodiode array.
- 4) A digital video decoding circuit to convert standard video input into a form necessary for all other circuits to operate in the chip.
- 5) Memory blocks, both dynamic and static, to be used as video data buffers and program storage.
- 6) Microprocessor, which is optional, could be included to carry out any of the functions capable of a microprocessor.
- 1) A nano wired LED array in a tessellation described in
- With the appropriate choice of materials for the nano-wire, the epitaxial layer and the diameter of the nanowire, Red, Green and Blue LEDs can be implemented. The preferred tessellations for the LED array is shown in
FIGS. 3( a) and 3(b). There are a number of other possible arrangements, for example: -
R G B R G B R G B R G B R G B R G B R G B R G B B G R B G R B G R B G R B G R B G R B G R B G R R G B R G B R G B R G B R G B R G B R G B R G B - The pinned photodiode shown in
FIG. 2 is described in U.S. Pat. No. 6,100,551, which is incorporated herein in their entirety by reference.FIG. 2 illustrates a cross sectional diagram of the devices used in creating the sensor of the present invention. This is the result of integration of an active pixel sensor (APS) architecture typically fabricated in CMOS technology with a pinned photodiode device (item12 PPD inFIG. 2 ) using a mixed process technology. The PPD becomes the photoactive element in an XY-addressable area array. - The uniformity of the photodiode array is first ensured by dark and uniform illumination of the entire array with an external source while the nano wire LEDs are turned off. The gains, the black levels of the three color channels, and whatever other controls available in the circuits are then adjusted to their initial values. Similarly, the pixel to pixel uniformity of the LED array is ensured by setting the loop gain values of the photodiode/LED pair either individually or in mapped groups through an initial calibration process.
- In subsequent operation the LED output will retain immunity to temperature variation to the degree that the pinned photodiode allows. In addition this approach will mitigate the development of non-uniformity and local or global drift in brightness, including fixed pattern noise due to manufacturing non-uniformity, in the display generated by the LED array during operation.
- The entire processing, memory, control, and driver system may be generally referred to as a controller. Various other types of circuitry may also act as the controller, and the embodiment is not limited to a particular circuitry used.
- All references mentioned in the application are incorporated herein in their entirety by reference.
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US14/516,402 US20160111460A1 (en) | 2008-09-04 | 2014-10-16 | Back-lit photodetector |
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US14/704,143 US20150303333A1 (en) | 2008-09-04 | 2015-05-05 | Passivated upstanding nanostructures and methods of making the same |
US14/705,380 US9337220B2 (en) | 2008-09-04 | 2015-05-06 | Solar blind ultra violet (UV) detector and fabrication methods of the same |
US15/057,153 US20160178840A1 (en) | 2008-09-04 | 2016-03-01 | Optical waveguides in image sensors |
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US15/090,155 US20160216523A1 (en) | 2008-09-04 | 2016-04-04 | Vertical waveguides with various functionality on integrated circuits |
US15/093,928 US20160225811A1 (en) | 2008-09-04 | 2016-04-08 | Nanowire structured color filter arrays and fabrication method of the same |
US15/149,252 US20160254301A1 (en) | 2008-09-04 | 2016-05-09 | Solar blind ultra violet (uv) detector and fabrication methods of the same |
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WO2011044101A1 (en) | 2011-04-14 |
US20110079796A1 (en) | 2011-04-07 |
US8791470B2 (en) | 2014-07-29 |
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