TWI451536B - 多層配線基板及其製造方法 - Google Patents

多層配線基板及其製造方法 Download PDF

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TWI451536B
TWI451536B TW098110035A TW98110035A TWI451536B TW I451536 B TWI451536 B TW I451536B TW 098110035 A TW098110035 A TW 098110035A TW 98110035 A TW98110035 A TW 98110035A TW I451536 B TWI451536 B TW I451536B
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reinforcing plate
solder resist
wiring board
opening
diameter
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TW200950012A (en
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Toshiya Asano
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Ngk Spark Plug Co
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Description

多層配線基板及其製造方法
本申請案主張於2008年3月28日所申請之日本專利申請案號2008-086883的優先權,以參考方式將該申請案之整體內容併入本文。
本發明之裝置或方法係關於一種不包含核心基板之多層配線板。
最近幾年當中,例如作為電腦微處理器使用之半導體積體電路裝置(IC晶片)的處理速度已經增快,且已經改善其功能。結果,有增加端子數量以及縮減端子之間的間距之趨勢。通常,複數個端子係在IC晶片之底面上密集配置成陣列,且該端子群組係以倒裝晶片接合(flip-chip bonding)連接至主機板上之端子群組上。然而,IC晶片之端子群組中之該等端子間的間距與主機板之端子群組中之該等端子間的間距差異大,且因此難以將該IC晶片連接至主機板。因此,通常使用一種用以安裝配線板(用於安裝該IC晶片)之封裝,且將該封裝安裝在主機板上。
作為用以安裝該IC晶片之配線板,已實際使用多層配線板,其包含形成在核心基板之前表面及背表面上之積累層(build-up layer)。在該多層配線板中,例如,使用以強化纖維浸漬樹脂所形成之樹脂基板(例如,玻璃環氧樹脂基板)作為核心基板。使用該核心基板之剛性,在該核心基板之前表面及背表面上交替形成複數個絕緣層及導體層,且 因此形成積累層。亦即,在該多層配線板中,該核心基板作為強化構件,且具有遠大於該積累層之厚度。此外,在該核心基板上形成配線線路(例如,穿孔導體),供以電性連接形成在該前表面及背表面上之該積累層的每一層,以便穿過該核心基板。
而且,最近幾年當中,隨半導體積體電路裝置在處理速度的增快,已經使用高頻帶之信號。在此情況中,穿過該核心基板之配線線路作用為大電感,且因此出現難以改善處理速度之高頻信號的傳送損耗或電路故障。為了對付該問題,已提議一種不具核心基板之無核心配線板,作為用以安裝IC晶片之配線板(例如,見日本專利案號3664720)。因該無核心配線板不含具有相當大厚度之核心基板,故縮短配線之整體長度。因此,要降低高頻信號之傳送損耗且以高速操作半導體積體電路裝置是可能的。
而且,由於該無核心配線板係未以核心基板製造,故難以充份確保該無核心配線板之強度。因此,於相關技術中將框架接合至用以安裝IC晶片之裝置安裝表面以強化強度,藉以確休該無核心配線板之強度。在該基板之邊緣設有該框架以便圍繞該IC晶片。此外,日本專利案號3664720敘述受到絕緣處理之金屬板係接著且固定至相對於該裝置安裝表面之背表面,且接著將該無核心配線板插入於該框架與金屬板之間以確保該配線板之強度,藉以防止該配線板之彎曲。在該無核心配線板中,使外部連結端子接墊暴露之複數個穿孔係形成在設於該背表面上之金屬 強化板。
然而,依據日本專利案號3664720中之該無核心配線板,如該等外部連結之端子接墊的數個導體圖案係藉由接著劑形成在樹脂絕緣層之最外層上,且將該金屬強化板接合至該樹脂絕緣層。因此,有必要使用對該等導體圖案之金屬或該樹脂絕緣層之樹脂具良好接著性之接著劑,以便接合該金屬強化板。當使用具有相當低材料成本之通用接著劑,如僅供用於接著每一樹脂之樹脂用接著劑時,即難以得到足夠之接合強度。此外,該金屬強化板比樹脂板具較低加工性(workability)及較高材料成本。即使當使用樹脂強化板來取代該金屬板時,有必要將該強化板固定至上面有形成該導體圖案之樹脂絕緣層。因此,難以得到足夠之接著強度。
而且,在日本專利案號3664720之該無核心配線板中,於接合該金屬強化板後,透過在該金屬板中所形成之數個穿孔,於該等外部連結之端子接墊上形成數個焊錫凸塊(solder bump)。亦即,該金屬強化板作用為防焊阻劑。因此,在日本專利案號3664720中,在該配線板上沒有形成防焊阻劑。然而,不像該防焊阻劑,該金屬強化板係藉由接著劑接合至該配線板。因此,擔心的是該接著劑可為當形成該等焊錫凸塊時所施加之熱所熔化、流入該等穿孔、並與該等焊錫凸塊混合成為雜質。
本發明之示範性實施例著眼於上述缺點及以上未敘述 之其他缺點。然而,不要求本發明克服上述缺點,因而,本發明示範性實施例可能未克服上述任何問題。
因此,本發明之一項觀點在提供可以低製造成本改善基板強度之一種多層配線板及其製造方法。
依據本發明之一個以上之觀點,提供一種不具核心基板之多層配線板。該多層配線板包括:多層積層式結構,其係藉由交替積層複數層配線層及複數層絕緣層所形成;複數個第一端子(terminals),其設置在該多層積層式結構之前表面上且其上安裝半導體積體電路裝置;複數個第二端子,其設置在與該前表面相對之該多層積層式結構的背表面上且將其電性連接至另一板;防焊阻劑,其形成為覆蓋該背表面且包括在對應於該等第二端子位置之位置所形成的複數個防焊阻劑開口;強化板,其由非金屬材料製成且包括在對應於該等第二端子位置之位置所形成的複數個強化板開口;以及接著層,其插入在該防焊阻劑與該強化板之間,以表面接觸狀態將該強化板固定在該防焊阻劑且包括在對應於該等第二端子位置之位置所形成的複數個接著層開口。該等防焊阻劑開口之直徑及該等強化板開口之直徑小於該等接著層開口之直徑。
依據該多層配線板,因以表面接觸狀態將由非金屬材料製成之強化板固定至該防焊阻劑,相較於其中將金屬強化板固定至上面形成有導體圖案之樹脂絕緣層之上表面的相關技術,要得到足夠之接著強度是可能的。此外,因該強化板係由非金屬材料製成,其具有高可加工性。因此, 要在對應於該等第二端子之數個位置輕易形成該等強化板開口是可能的,且要降低材料成本亦是可能的。而且,因該等強化板開口之直徑及該等防焊阻劑開口之直徑小於該接著層開口之直徑,要穩固地固定該強化板而不使該接著層朝向該防焊阻劑開口之內部或該強化板開口之內部突起是可能的。因此,當該等焊錫凸塊(solder bump)係設置在該等第二端子上且該多層配線板係透過該等焊錫凸塊安裝在外部基板上時,要防止經熔化之該等焊錫凸塊與該接著層接觸是可能的。結果,要防止接著劑與該等焊錫凸塊混合是可能的。
該等強化板開口之直徑可小於該防焊阻劑開口之直徑。依據此結構,因該等強化板開口之直徑減小,要確保該強化板之剛性及來自該強化板之充分強化面積是可能的。此外,在該多層配線板之背表面中,要將發生熱膨脹係數(CTE)之間不匹配的區域最小化是可能的。結果,要改善多層配線板之可靠性是可能的。
該強化板可主要由合成樹脂所形成,且該接著層可由熱固型樹脂之硬化材料形成。依據此結構,因該防焊阻劑係由具有高耐熱性之樹脂材料形成,故可穩固地將由合成樹脂製成之該強化板接著且固定至由樹脂材料製成之該防焊阻劑。
數個焊錫凸塊或數個端子銷(terminal pins)係設置在該等第二端子之相對應一者。該等焊錫凸塊或該等端子銷係將該等第二端子電性連接至另一基板。
可依據形成經安裝電子組件之數個連結端子的材料,選擇形成該等焊錫凸塊之金屬材料。例如,可使用任一種下列材料作為形成該等焊錫凸塊之金屬材料:Pb-Sn系焊錫,如90Pb-10Sn、95Pb-5Sn、或40Pb-60Sn;Sn-Sb系焊錫;Sn-Ag系焊錫;Sn-Ag-Cu系焊錫;Au-Ge系焊錫;及Au-Sn焊錫系。
此外,可使用由例如Cu合金或鐵-鎳-鈷合金製成之引線端子(lead terminal)為端子銷。例如,可藉由焊接將該端子銷固定至該第二端子。
有利的是該等防焊阻劑開口之直徑比該等接著層開口之直徑小50μm以上。依據此結構,要穩固地固定該強化板而不使該接著層朝向該防焊阻劑開口之內部或該強化板開口之內部突起是可能的。自同一理由,有利的是該等強化板開口之直徑比該等接著層開口之直徑小50μm以上。
該等強化板開口之直徑可自該強化板之非接著表面至接著表面減小。依據此結構,要確保該強化板對該基板背表面之充分接著面積,且改善該多層配線板之剛性是可能的。此外,在該多層配線板之背表面中,藉由增加該強化板所強化面積,以減小其中出現熱膨脹係數(CTE)之間不匹配的區域是可能的。結果,要改善多層配線板之可靠性是可能的。
可將焊錫球接合至該等第二端子且該等強化板開口直徑之最大值可大於該焊錫球之直徑。此外,可將該等強化板開口直徑之最小值設成小於該焊錫球之直徑。依據此結 構,可透過該等強化板開口,將該等焊錫球可靠地接合至該等第二端子。
依據本發明之該等觀點不具核心之多層配線基板的數個實例包含”主要具有同一組態之數個層間絕緣層的多層配線基板”及”其中僅藉由具有延伸於同一方向上之數個直徑之數個導通孔將彼此連接之多層配線基板”。
該絕緣層可依據,例如,絕緣特性、耐熱性、及耐濕性來選擇。該絕緣層可由任何下列材料所形成:如環氧樹脂、酚樹脂、胺基甲酸酯樹脂、矽氧樹脂及聚醯亞胺樹脂之熱固性樹脂;以及如聚碳酸酯樹脂、丙烯酸樹脂、聚甲醛樹脂及聚丙烯樹脂之熱塑性樹脂。在該等樹脂材料中可使用,例如,樹脂與如玻璃纖維(玻璃織物或玻璃不織物)之無機纖維的複合材料、樹脂與如聚醯胺纖維之有機纖維的複合材料、或藉由以如環氧樹脂之熱固性樹脂來浸漬如膨脹PTFE之三維網狀氟系樹脂基材而得到的樹脂-樹脂複合材料。
例如以扣除法(subtractive method)、半加成法(semi-additive method)或全加成法(fully additive method)將該等配線層在該等絕緣層上形成圖案。例如,該導體層可由如銅、銅合金、鎳、鎳合金、錫、或錫合金之金屬材料所形成。
依據本發明之一個或以上觀點,提供一種製造多層配線板之方法。該方法包括:(a)提供藉由交替積層複數層配線層及複數層絕緣層所形成之多層積層式結構,其中複 數個第一端子係設置在該多層積層式結構之前表面上,且複數個第二端子係設置在相對於該前表面之該多層積層式結構的背表面上;(b)形成防焊阻劑以覆蓋該多層積層式結構之背表面;(c)在該防焊阻劑中形成複數個防焊阻劑開口,使得在對應於該等第二端子位置之位置形成該等防焊阻劑開口;(d)提供由非金屬材料製成且具有形成於內部之複數個強化板開口的強化板,其中在該強化板之一個表面上設置有呈非硬化狀態之接著層,且該接著層在對應於該等強化板開口位置之位置,形成複數個接著層開口,且其中將該等防焊阻劑開口之直徑及該等強化板開口之直徑設成小於該等接著層開口之直徑;(e)使用該接著層,以表面接觸狀態將該強化板固定在該防焊阻劑,使得該等強化板開口之每一個相對於該等防焊阻劑開口之相對應一者;以及(f)以低於焊錫熔化之溫度,將非硬化狀態下之該接著層硬化。
依據以上方法,因以表面接觸狀態將由非金屬材料製成之強化板固定至該防焊阻劑,比較於其中將金屬強化板固定至其上面形成有導體圖案之樹脂絕緣層之上表面的相關技術,要得到足夠之接著強度是可能的。此外,因步驟(d)中之該強化板係由非金屬材料製成,其具有高度可加工性。因此,要在對應於該等第二端子之數個位置輕易形成該等強化板開口是可能的,且要降低材料成本亦是可能的。而且,因該等強化板開口之直徑及該等防焊阻劑開口之直徑係設成小於該等接著層開口之直徑,要穩固地固定 該強化板而不使該接著層朝向該防焊阻劑開口之內部或該強化板開口之內部突起是可能的。因此,當該等焊錫凸塊係設置在該等第二端子上且該多層配線板係透過該等焊錫凸塊安裝在另一基板上時,要防止經熔化之該等焊錫凸塊與該接著層接觸是可能的。結果,要防止接著劑與該等焊錫凸塊混合是可能的。
當該等焊錫凸塊或端子銷係設置在該等第二端子上時,可在該強化板接著步驟前執行設置該等焊錫凸塊或端子銷之步驟。當在該強化板接著步驟後執行設置該等焊錫凸塊或端子銷之步驟時,將在設置該等焊錫凸塊或端子銷之步驟中的焊接熱應力施加至該強化板或接著層。相反地,當在該強化板接著步驟前執行設置該等焊錫凸塊或端子銷之步驟時,要防止施加該焊接熱應力是可能的。此外,當該強化板或接著層係由具有高耐熱性之材料製成時,可在該強化板接著步驟後執行設置該等焊錫凸塊或端子銷之步驟。
在步驟(d)中,該接著層係暫時接著至該強化板之一個表面,且在步驟(e)中,接著接著至該防焊阻劑。反之,當該接著層係暫時接著至該防焊阻劑且接著接著至該強化板時,該等第二端子上之該等焊錫凸塊或端子銷會使其難以暫時接著該接著層,相反地,因如該等焊錫凸塊或端子銷之不平坦部位未設置在該強化板中,在步驟(d)中要輕易執行將該接著層暫時接著至該強化板之一個表面是可能的。而且,在步驟(f)中,以低於焊錫熔化之溫度,將非硬化狀 態下之該接著層硬化。因此,要防止該等第二端子上之該等焊錫凸塊、或將該等端子銷接合至該等第二端子之焊錫接合部被熔化是可能的。
自下列說明、諸圖式及申請專利範圍,本發明之其他觀點、特性及優勢將是顯而易見的。
此後將參考該等圖式,說明本發明示範性實施例。
第1圖為圖示依據該示範性實施例之無核心配線板(多層配線板)結構的切面示意圖。
如第1圖中所示,無核心配線板10不含核心基板,且含多層積層式結構,其中該多層積層式結構係藉交替形成由環氧樹脂製成之四層樹脂絕緣層(層間絕緣層)21、22、23及24以及由銅製成之導體層26而得到。該樹脂絕緣層21至24為具有同一厚度且由同一材料所製成,且由環氧樹脂製成之薄片形積累(build-up)材料所形成的數層層間絕緣層。
數個端子接墊27(在前表面側上之數個連結端子)係在該無核心配線板10之前表面12(該第四樹脂絕緣層24之前表面)上配置成陣列。此外,防焊阻劑28大致覆蓋該樹脂絕緣層24之整個前表面。在該防焊阻劑28中形成將該等端子接墊27暴露之數個開口29。複數個焊錫凸塊(solder bump)30係設置在該等端子接墊27之表面上。該等焊錫凸塊30之每一塊係電性連接至形成矩形平板形之IC晶片31(半導體積體電路裝置)之數個表面連結端子32的相對應 一者。該等端子接墊27及焊錫凸塊30係形成在可安裝該IC晶片31之IC晶片安裝區33中。
數個球柵格陣列(BGA)接墊41(在背表面側上之數個連結端子)係在該無核心配線板10之背表面13(該第一樹脂絕緣層21之下表面)上設置成陣列。此外,防焊阻劑42大致覆蓋該樹脂絕緣層21之整個下表面。在對應於該等BGA接墊41位置之該防焊阻劑42中形成將該等BGA接墊41暴露之數個開口45(防焊阻劑開口)。此外,數個導通孔46及導通導體47係形成在樹脂絕緣層21、22、23及24之每一層中。例如,該導通孔46具反圓錐台形狀(inverted truncated cone shape),且係使用YAG雷射或二氧化碳氣體雷射,將該等樹脂絕緣層21至24穿孔而形成。該等導通導體47之直徑在同一方向中(第1圖中往上方向)延伸,且該等導通導體47之每一個電性連接該導體層26、端子接墊27及BGA接墊41。
在依據該示範性實施例之該無核心配線板10中,藉由接著層51,以表面接觸狀態將該強化板50接著且固定在該防焊阻劑42。可使用非金屬材料製成且具有厚度約為0.5mm之板作為強化板50。例如,使用由環氧樹脂及玻璃纖維製成之玻璃環氧基板作為強化板。複數個開口52(強化板開口)係形成在對應於複數個BGA接墊41之位置處的強化板50中。
該接著層51為具有高耐熱性之熱固性樹脂硬化材料。例如,藉由將由環氧樹脂製成之膜形接著薄片硬化, 形成接著層51。複數個開口53(接著開口)係形成在對應於複數個BGA接墊41之位置處的接著層51中。
在示範性實施例中,複數個BGA接墊41係形成平面圖中之圓形,且個別形成在該防焊阻劑42、強化板50、及接著層51之開口45、52、及53具有平面圖中之圓形。
如第2圖中所示,在示範性實施例的該無核心配線板10中,將該強化板50之開口52的直徑D1及該防焊阻劑42之開口45的直徑D2設成小於該接著層51之開口53的直徑D3。此外,將該強化板50之開口52的直徑D1設成小於及該防焊阻劑42之開口45的直徑D2。亦即,該等開口45、52、及53係形成為使該強化板50之開口52的直徑D1為最小,隨後為該防焊阻劑42之開口45的直徑D2及該接著層51之開口53的直徑D3。
此外,該等焊錫凸塊55係透過該等開口45、52、及53,設置在該等BGA接墊41之前表面上,且以該等焊錫凸塊55將第1圖中所示之無核心配線板10安裝在主機板(未示出)上。
例如,具有上述結構之無核心配線板10係製造如下。
在示範性實施例中,製備具有足夠強度之支撐基板(例如,玻璃環氧基板),且在該支撐基板上積累該無核心配線板10之該等樹脂絕緣層21至24及導體層26。第3至13圖為圖示製造方法圖,且表示,例如,形成在該支撐基板之上表面上的該等樹脂絕緣層21至24及導體層26。雖然,該等圖中未表示,該等樹脂絕緣層21至24及導體層26係 類似地形成在該支撐基板之下表面上。
明確地說,如第3圖中所示,將由環氧樹脂製成之薄片形絕緣樹脂基材係以部份硬化狀態,接著在支撐基板60之上表面上以便形成基底樹脂絕緣層61。接著,如第4圖中所示,積層式金屬片62係設置在基底樹脂絕緣層61之上表面上。因該積層式金屬片62係以部份硬化狀態,設置在該基底樹脂絕緣層61上,要確保有足夠接著力以防止積層式金屬片62於隨後製程中自基底樹脂絕緣層61剝離是可能的。該積層式金屬片62係藉由緊密接著兩銅箔62a及62b所形成,使其可彼此剝離。明確地說,執行金屬電鍍(例如,鉻電鍍),將兩銅箔62a及62b積層,藉以形成該積層式金屬片62。
接著,如第5圖中所示,配置該薄片形絕緣樹脂基材63以便覆蓋該積層式金屬片62,且使用真空熱壓機(未示出)於真空氣壓下對薄片形絕緣樹脂基材63加壓及加熱,藉以使該絕緣樹脂基材63硬化。因此,形成第一樹脂絕緣層21。該樹脂絕緣層21係緊密接著至該積層式金屬片62,且在該積層式金屬片62之周圍區亦緊密接著至基底樹脂絕緣層61,以密封該積層式金屬片62。
接著,如第6圖中所示,使用雷射在特定位置之該樹脂絕緣層21中形成該等導通孔46,且接著執行去除該等導通孔46中膠渣的去膠渣(desmear)處理。然後,執行無電解銅電鍍(electroless copper plating)及電解銅電鍍,在該等導通孔46之每一個中形成導通導體47且在該樹脂絕緣 層21上形成該導體層26。此外,藉由,例如,半加成法執行蝕刻,將該導體層26在該樹脂絕緣層21上圖案化(見第7圖)。
該第二至第四樹脂絕緣層22至24及導體層26係以與形成該第一樹脂絕緣層21及導體層26之同一方法積累在該樹脂絕緣層21上。然後,將感光性環氧樹脂施加在上面有形成該等端子接墊27之樹脂絕緣層24上且接著將其硬化以形成防焊阻劑28。然後,將特定遮罩放置在該防焊阻劑上,且執行曝光及顯像,使該防焊阻劑28形成圖案,藉以形成該等開口29。因此,在該支撐基板60上形成包含該積層式金屬片62、該等樹脂絕緣層21至24、及該導體層26之積層體70(見第8圖)。在該積層體70中,配置在該積層式金屬片62上之區域(多層)係作用為該無核心配線板10之配線積層部20(積層式結構)。
使用切割機(未示出)切割該積層體70,藉以去除該積層體70之配線積層部20的周圍區域。在此情況中,如第8圖中所示,亦在該配線積層部20與其周圍部71間之邊界處切割該配線積層部20下方之基底樹脂絕緣層61及支撐基板60。藉由此切割程序,暴露出由該樹脂絕緣層21所密封之積層式金屬片62的邊緣。亦即,當去除該周圍部71時,亦去除該基底樹脂絕緣層61與樹脂絕緣層21間之緊密接觸部。結果,僅藉由該積層式金屬片62,將該配線積層部20及支撐基板60彼此連接。
如第9圖中所示,在該積層式金屬片62之兩銅箔62a 及62b間之介面處將該配線積層部20自支撐基板60分離。然後,如第10圖中所示,藉由蝕刻將該配線積層部20之背表面13(下表面)(樹脂絕緣層21)上之銅箔62a圖案化以形成該等BGA接墊41。然後,如第11圖中所示,將感光性環氧樹脂施加在上面有形成該等BGA接墊41之樹脂絕緣層21上且接著硬化,以便形成防焊阻劑42以覆蓋該配線積層部20之背表面13(防焊阻劑形成程序)。然後,將特定遮罩置放在該防焊阻劑42上,且執行曝光及顯像,使該防焊阻劑42形成圖案,藉以形成該等開口45。
接著,該等焊錫凸塊30係形成於在該配線積層部20之前表面12上所形成的複數個端子接墊27上。明確地說,使用焊錫球安裝設備(未示出)將該等焊錫球配置在該等端子接墊27上,且在指定溫度下對該等焊錫球加熱而回流(reflow)。因此,在該等端子接墊27上所形成該等焊錫凸塊30。類似地,該等焊錫凸塊55係形成於在該配線積層部20之後表面13上所形成的複數個BGA接墊41。
然後,如第12圖中所示,製備強化板50,其具有形成於內部之複數個開口52及以非硬化狀態形成在其一個表面上之接著層51(強化板製備程序)。例如,使用鑚孔機,藉由鑚孔程序形成該強化板50之該等開口52。此外,例如,使用沖壓模具,藉由沖壓膜形接著薄片,形成該接著層51之該等開口53。而且,該接著層51之該等開口53形成為使其直徑大於該強化板50之開口52的直徑。
然後,如第13圖中所示,該強化板50係藉由該接著 層51以表面接觸狀態固定至該防焊阻劑42(強化板接著程序)。然後,在溫度(例如,150℃)低於該焊錫凸塊55之焊錫熔化溫度(例如,210℃)下執行加熱,且接著將呈非硬化狀態之接著層51硬化(硬化程序)。因此,得到第1圖中所示之該無核心配線板10。
因此,在示範性實施例中,可得到下列效用。
(1)在依據該示範性實施例之無核心配線板10中,將由玻璃環氧基板所形成之樹脂強化板50以表面接觸狀態接著且固定至該防焊阻劑42。因此,與其中金屬強化板係接著且固定至在上面形成有導體圖案之樹脂絕緣層之上表面的相關技術比較,要得到足夠接著強度是可能的。此外,因該強化板50係由樹脂材料製成,故其具有高加工性。因此,要在對應於該等BGA接墊41之數個位置輕易形成該等開口52是可能的,且亦可能降低材料成本。而且,因將該強化板50之開口52的直徑D1及該防焊阻劑42之開口45的直徑D2設成小於該接著層51之開口53的直徑D3,要穩固地固定該強化板50而不使該接著層51朝向該防焊阻劑42之開口45之內部或該強化板50之開口52之內部突起是可能的。因此,該等BGA接墊41上之該等焊錫凸塊55未接觸該接著層51。結果,當將該無核心配線板10安裝在主機板上時,要防止接著劑與經熔化之該等焊錫凸塊55混合是可能的。
(2)在依據該示範性實施例之無核心配線板10中,於接著該強化板50之程序前,執行將該等焊錫凸塊55設置 在該BGA接墊41上之程序。在該硬化程序中,以低於該焊錫熔化之溫度,將非硬化狀態下之該接著層51硬化。因此,要防止在BGA接墊41上所形成之該等焊錫凸塊55在該接著層51之硬化程序中被熔化是可能的。
(3)在依據該示範性實施例之無核心配線板10中,將該強化板50之開口52的直徑D1設成小於該防焊阻劑42之開口45的直徑D2。如此一來,因該強化板50之開口52的直徑D1被減小,要確保該強化板50之剛性及由該強化板50所提供之充分強化面積是可能的。結果,在將該IC晶片31安裝在該無核心配線板10上之程序中,要將該無核心配線板10可靠地加以定位而不使該無核心配線板10彎曲或損壞是可能的。此外,要防止其中出現熱膨脹係數(CTE)之間不匹配的區域被形成在該無核心配線板10之背表面13中是可能的。結果,可改善該無核心配線板10之可靠性。
本發明示範性實施例可如下修飾。
在上述實施例中,該無核心配線板10採用球柵格陣列(BGA)封裝型,但亦可採用針柵格陣列(PGA)封裝型。第14圖表示無核心配線板10A。在該無核心配線板10A中,將數個PGA接墊41A(在該背表面側上之數個連結端子)在該背表面13(該第一樹脂絕緣層21之下表面)上配置成陣列,且將數個端子銷56焊接至數個PGA接墊41A。除該等端子銷56係設置在該等PGA接墊41A上外,該無核心配線板10A具有與該無核心配線板10同一之結構。
如第15圖中所示,明確地說,該端子銷56具有包含軸部57及頭部58之釘頭形,該頭部58之直徑大於該軸部57之直徑。該頭部58係利用插入於其間之焊接部59而連接至PGA接墊41A。此外,該端子銷56之軸部57穿過該強化板50之開口52且其前緣端自該強化板50之下表面突起。藉由該接著層51,以表面接觸狀態將該強化板50固定在該防焊阻劑42。在該無核心配線板10A中,將該強化板50之開口52的直徑D1及該防焊阻劑42之開口45的直徑D2設成小於該接著層51之開口53的直徑D3。因此,要穩固地固定該強化板50而不使該接著層51朝向該防焊阻劑42之開口45之內部或該強化板50之開口52之內部突起是可能的。此外,將該強化板50之開口52的直徑D1設成小於該防焊阻劑42之開口45的直徑D2。因此,因該強化板50之開口52的直徑D1被減小,要確保該強化板50之剛性及由該強化板50所提供之充分強化面積是可能的。
在該上述實施例中,將該等焊錫凸塊55形成在該等BGA接墊41上後,執行強化板接著程序及硬化程序,將該強化板50固定至該無核心配線板10。然而,相反地,於固定該強化板50後,可將該等焊錫凸塊55形成在該等BGA接墊41上。
在依據該等上述實施例之無核心配線板10及10A中,該強化板50係由玻璃環氧基板所形成,但本發明之數個示範性實施例不限於此。例如,明確地說,可保持絕緣特性 之小量金屬粉(例如,銅填料)可與合成樹脂材料混合以形成該強化板50。在此情況中,要改善該強化板50之散熱效能是可能的。
儘管本發明已參考特定實施例作表示與說明,但其它之實施態樣係在本發明之申請專利範圍內。本領域之熟悉技藝將了解到其可做形式及細節之各種變更而不致背離由隨附之申請專利範圍所定義之精神與範圍。
10‧‧‧無核心配線板
20‧‧‧配線積層部
21‧‧‧樹脂絕緣層
22‧‧‧樹脂絕緣層
23‧‧‧樹脂絕緣層
24‧‧‧樹脂絕緣層
26‧‧‧導體層
12‧‧‧前表面
27‧‧‧端子接墊
28‧‧‧防焊阻劑
29‧‧‧開口
30‧‧‧焊錫凸塊
31‧‧‧IC晶片
32‧‧‧表面連結端子
33‧‧‧IC晶片安裝區
41‧‧‧球柵格陣列(BGA)接墊
13‧‧‧背表面
42‧‧‧防焊阻劑
45‧‧‧開口
46‧‧‧導通
47‧‧‧導通導體
56‧‧‧端子銷
55‧‧‧焊錫凸塊
51‧‧‧接著層
50‧‧‧強化板
52‧‧‧開口
53‧‧‧開口
57‧‧‧軸部
58‧‧‧頭部
59‧‧‧焊接部
60‧‧‧支撐基板
61‧‧‧基底樹脂絕緣層
62‧‧‧積層式金屬片
62a,62b‧‧‧銅箔
63‧‧‧絕緣樹脂基材
70‧‧‧積層體
71‧‧‧周圍部
10A‧‧‧無核心配線板
41A‧‧‧PGA接墊
第1圖為圖示依據本發明示範性實施例之無核心配線板的切面示意圖;第2圖為圖示依據該示範性實施例之無核心配線板之主要部件的放大切面圖;第3圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第4圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第5圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第6圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第7圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第8圖為圖示製造依據該示範性實施例之無核心配線板的方法圖; 第9圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第10圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第11圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第12圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第13圖為圖示製造依據該示範性實施例之無核心配線板的方法圖;第14圖為圖示依據本發明另一示範性實施例之無核心配線板結構的切面示意圖;以及第15圖為圖示依據該示範性另一實施例之該無核心配線板之主要部件的放大切面圖。
10‧‧‧無核心配線板
20‧‧‧配線積層部
21‧‧‧樹脂絕緣層
22‧‧‧樹脂絕緣層
23‧‧‧樹脂絕緣層
24‧‧‧樹脂絕緣層
26‧‧‧導體層
12‧‧‧前表面
27‧‧‧端子接墊
28‧‧‧防焊阻劑
29‧‧‧開口
30‧‧‧焊錫凸塊
31‧‧‧IC晶片
32‧‧‧表面連結端子
33‧‧‧IC晶片安裝區
41‧‧‧球柵格陣列(BGA)接墊
13‧‧‧背表面
42‧‧‧防焊阻劑
45‧‧‧開口
46‧‧‧導通
47‧‧‧導通導體
55‧‧‧焊錫凸塊
51‧‧‧接著層
50‧‧‧強化板
52‧‧‧開口
53‧‧‧開口

Claims (7)

  1. 一種不具核心基板之多層配線板,包括:多層積層式結構,其係藉由交替積層複數層配線層及複數層絕緣層所形成;複數個第一端子(terminals),其等設置在該多層積層式結構之前表面上且其上安裝半導體積體電路裝置;複數個第二端子,其設置在與該前表面相對之該多層積層式結構的背表面上且將其電性連接至另一板;防焊阻劑,其形成為覆蓋該背表面且包括在對應於該等第二端子位置之位置所形成的複數個防焊阻劑開口;強化板,其由非金屬材料製成且包括在對應於該等第二端子位置之位置所形成的複數個強化板開口;以及接著層,其插入在該防焊阻劑與該強化板之間,以表面接觸狀態將該強化板固定在該防焊阻劑且包括在相對應於該等第二端子位置之位置所形成的複數個接著層開口,其中該等防焊阻劑開口之直徑及該等強化板開口之直徑小於該等接著層開口之直徑。
  2. 如申請專利範圍第1項之多層配線板,其中該等強化板開口之直徑小於該等防焊阻劑開口之直徑。
  3. 如申請專利範圍第1項之多層配線板,其中該強化板主 要係由合成樹脂形成,以及該接著層係由熱固型樹脂之硬化材料形成。
  4. 如申請專利範圍第1項之多層配線板,其中數個焊錫凸塊(solder bump)或數個端子銷(terminal pin)係設置在該等第二端子中所對應之一者上。
  5. 如申請專利範圍第1項之多層配線板,其中該等防焊阻劑開口之直徑比該等接著層開口之直徑小50μm以上。
  6. 如申請專利範圍第1項之多層配線板,其中將該等強化板開口之直徑自該強化板之非接著表面至接著表面減小。
  7. 一種製造多層配線板之方法,該方法包括:(a)供藉由交替積層複數層配線層及複數層絕緣層所形成之多層積層式結構,其中複數個第一端子係設置在該多層積層式結構之前表面上,且複數個第二端子係設置在與該前表面相對之該多層積層式結構的背表面上;(b)形成防焊阻劑以覆蓋該多層積層式結構之背表面;(c)在該防焊阻劑中形成複數個防焊阻劑開口,使得在對應於該等第二端子位置之位置形成該等防焊阻劑開口;(d)提供由非金屬材料製成且具有形成於內部之複數個強化板開口之強化板,其中在該強化板之一個表面上預備有呈非硬化狀態之接著層,且該接著層具有在對應於該等強化板開口位置之位置所形成之複數個接著層開 口,且其中將該等防焊阻劑開口之直徑及該等強化板開口之直徑設成小於該等接著層開口之直徑;(e)使用該接著層,以表面接觸狀態將該強化板固定在該防焊阻劑,使得該等強化板開口之每一個,相對於該等防焊阻劑開口中所對應之一者;以及(f)以低於焊錫熔化之溫度,將非硬化狀態下之該接著層硬化。
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