JP5113114B2 - 配線基板の製造方法及び配線基板 - Google Patents
配線基板の製造方法及び配線基板 Download PDFInfo
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- JP5113114B2 JP5113114B2 JP2009092252A JP2009092252A JP5113114B2 JP 5113114 B2 JP5113114 B2 JP 5113114B2 JP 2009092252 A JP2009092252 A JP 2009092252A JP 2009092252 A JP2009092252 A JP 2009092252A JP 5113114 B2 JP5113114 B2 JP 5113114B2
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Description
図1は本発明の第1の実施形態に係る配線基板(半導体パッケージ)の構成を示したものであり、(a)はその配線基板を上面から見たときの構成、(b)は(a)のA−A’線に沿って縦断面的に見たときの構成、(c)は(a)のB−B’線に沿って縦断面的に見たときの構成をそれぞれ示している。
図6は本発明の第2の実施形態に係る配線基板(半導体パッケージ)の構成を示したものである。同様に、(a)はその配線基板を上面から見たときの構成、(b)は(a)のA−A’線に沿って縦断面的に見たときの構成をそれぞれ示している。
図10は本発明の第3の実施形態に係る配線基板(半導体パッケージ)の構成を示したものである。同様に、(a)はその配線基板を上面から見たときの構成、(b)は(a)のA−A’線に沿って縦断面的に見たときの構成、(c)は(a)のB−B’線に沿って縦断面的に見たときの構成をそれぞれ示している。
図15は本発明の第4実施形態に係る配線基板(半導体パッケージ)の構成を示したものである。同様に、(a)はその配線基板を上面から診たときの構成、(b)は(a)のA−A’線に沿って縦断面的に見たときの構成、(c)は(a)のB−B’線 に沿って縦断面的に見たときの構成をぞれぞれ示している。
3,3a…アンダーフィル樹脂、
10,20,30,40…配線基板(半導体パッケージ)、
12, 15, 22,25,32,35,42,45…配線層(配線パターン)、
14,24,34,44…樹脂層(絶縁層)、
16,26…導体層(パッド)、
17,27,37,47…ソルダレジスト層(最外層の絶縁層/保護膜)、
34a…凸部(絶縁層の厚く形成されている部分)、
DP1,DP2,DP3,DP4…凹部(ダム構造)、
P1〜P8…(外部接続用の)パッド。
Claims (7)
- 電子部品を実装するのに用いられる配線基板の製造方法であって、
前記配線基板の前記電子部品の実装面側に最外層の配線層を形成する工程と、
前記配線層の一部に画定されるパッドの部分のみを他の配線部分よりも厚く形成する工程と、
前記配線層を覆うように最外層の絶縁層を形成する工程と、
前記絶縁層の前記電子部品の実装エリアに対応する部分に、前記電子部品のサイズよりも大きいサイズで当該絶縁層部分を、前記配線層の一部に画定されるパッドの表面が露出するまで段差状に除去して凹部を形成する工程とを含み、
前記凹部を形成する工程において、当該絶縁層部分をブラスト加工により除去して底面が平坦な凹部を形成するとともに、前記凹部内で、前記露出するパッドの表面が前記絶縁層の表面と同一面となるようにし、かつ該パッド以外の前記配線層が前記絶縁層で覆われるようにすることを特徴とする配線基板の製造方法。 - 電子部品を最外層の配線層の一部に画定されるパッドに接続して実装するのに用いられる配線基板の製造方法であって、
前記配線基板の前記電子部品の実装面側に前記配線層の下層の絶縁層を形成する工程と、
前記下層の絶縁層の、前記パッドの位置に対応する部分を残して他の絶縁層部分を厚さ方向に所要量だけ除去し、当該部分に凸部を有した絶縁層を形成する工程と、
前記凸部を有した絶縁層上に、該凸部に対応する部分が段差状になるように前記最外層の配線層を形成する工程と、
前記配線層を覆うように最外層の絶縁層を形成する工程と、
前記最外層の絶縁層の前記電子部品の実装エリアに対応する部分に、前記電子部品のサイズよりも大きいサイズで当該最外層の絶縁層部分を、ブラスト加工により前記配線層の一部に画定される前記パッドの表面が露出するまで段差状に除去して底面が平坦な凹部を形成する工程とを含むことを特徴とする配線基板の製造方法。 - 前記凸部を有した絶縁膜を形成する工程において、当該他の絶縁層部分をブラスト加工により除去することを特徴とする請求項2に記載の配線基板の製造方法。
- 前記凹部を形成する工程において、該凹部を前記電子部品の実装エリア全体に亘って形成することを特徴とする請求項1又は2に記載の配線基板の製造方法。
- 前記凹部を形成する工程において、該凹部を前記電子部品の実装エリアの周囲に沿ってその内側に環状に形成することを特徴とする請求項1又は2に記載の配線基板の製造方法。
- 電子部品を実装するのに用いられる配線基板であって、
前記配線基板の前記電子部品の実装面側に形成され、パッドの部分が他の部分より厚く形成された最外層の配線層と、
前記配線層を覆い、前記配線基板を保護する最外層の絶縁層とを有し、
前記絶縁層の前記電子部品の実装エリアに対応する部分に、前記電子部品のサイズよりも大きいサイズで当該絶縁層部分が段差状に除去されてなる、底面が平坦な凹部が形成されており、
前記凹部内において、前記パッドの表面が前記絶縁層の表面と同一面上に露出するとともに、前記凹部の底面をなす前記絶縁層により前記パッドの表面以外の配線層が覆われていることを特徴とする配線基板。 - 電子部品を最外層の配線層の一部に画定されるパッドに接続して実装するのに用いられる配線基板であって、
前記配線基板の前記電子部品の実装面側に形成され、前記パッドの位置に対応する部分が他の部分よりも厚く形成された前記配線層の下層の絶縁層と、
前記下層の絶縁層上に形成されて、前記パッドの位置に対応する部分が段差状になった前記最外層の配線層と、
前記配線層を覆い、前記配線基板を保護する最外層の絶縁層とを有し、
前記絶縁層の前記電子部品の実装エリアに対応する部分に、前記電子部品のサイズよりも大きいサイズで当該絶縁層部分が段差状に除去されてなる、底面が平坦な凹部が形成されており、
前記凹部内において、前記パッドの表面が前記絶縁層の表面と同一面上に露出するとともに、前記凹部の底面をなす前記絶縁層により前記パッドの表面以外の配線層が覆われていることを特徴とする配線基板。
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