TWI450335B - 在反應室中在基板上沈積釕薄膜之方法及由釕薄膜形成之結構 - Google Patents

在反應室中在基板上沈積釕薄膜之方法及由釕薄膜形成之結構 Download PDF

Info

Publication number
TWI450335B
TWI450335B TW096128199A TW96128199A TWI450335B TW I450335 B TWI450335 B TW I450335B TW 096128199 A TW096128199 A TW 096128199A TW 96128199 A TW96128199 A TW 96128199A TW I450335 B TWI450335 B TW I450335B
Authority
TW
Taiwan
Prior art keywords
film
ruthenium
substrate
gas
reaction chamber
Prior art date
Application number
TW096128199A
Other languages
English (en)
Chinese (zh)
Other versions
TW200814200A (en
Inventor
神力博
井上裕章
Original Assignee
日本Ａｓｍ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本Ａｓｍ股份有限公司 filed Critical 日本Ａｓｍ股份有限公司
Publication of TW200814200A publication Critical patent/TW200814200A/zh
Application granted granted Critical
Publication of TWI450335B publication Critical patent/TWI450335B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096128199A 2006-09-01 2007-08-01 在反應室中在基板上沈積釕薄膜之方法及由釕薄膜形成之結構 TWI450335B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/469,828 US7435484B2 (en) 2006-09-01 2006-09-01 Ruthenium thin film-formed structure

Publications (2)

Publication Number Publication Date
TW200814200A TW200814200A (en) 2008-03-16
TWI450335B true TWI450335B (zh) 2014-08-21

Family

ID=39150364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096128199A TWI450335B (zh) 2006-09-01 2007-08-01 在反應室中在基板上沈積釕薄膜之方法及由釕薄膜形成之結構

Country Status (4)

Country Link
US (2) US7435484B2 (https=)
JP (1) JP5196915B2 (https=)
KR (1) KR20080020953A (https=)
TW (1) TWI450335B (https=)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
JP2007234719A (ja) * 2006-02-28 2007-09-13 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US7473634B2 (en) * 2006-09-28 2009-01-06 Tokyo Electron Limited Method for integrated substrate processing in copper metallization
US7476615B2 (en) * 2006-11-01 2009-01-13 Intel Corporation Deposition process for iodine-doped ruthenium barrier layers
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US20080171436A1 (en) * 2007-01-11 2008-07-17 Asm Genitech Korea Ltd. Methods of depositing a ruthenium film
KR20080071787A (ko) * 2007-01-31 2008-08-05 삼성전자주식회사 금속막 형성방법
CN101680086B (zh) * 2007-05-21 2012-05-23 乔治洛德方法研究和开发液化空气有限公司 用于半导体领域的新型金属前体
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
KR101544198B1 (ko) 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
KR20090067505A (ko) * 2007-12-21 2009-06-25 에이에스엠지니텍코리아 주식회사 루테늄막 증착 방법
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US7993462B2 (en) 2008-03-19 2011-08-09 Asm Japan K.K. Substrate-supporting device having continuous concavity
DE102008026284A1 (de) * 2008-06-02 2009-12-03 Umicore Ag & Co. Kg Verfahren zur Herstellung von Ruthenium-Dienyl-Komplexen
US7928569B2 (en) * 2008-08-14 2011-04-19 International Business Machines Corporation Redundant barrier structure for interconnect and wiring applications, design structure and method of manufacture
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
JP2010059471A (ja) * 2008-09-03 2010-03-18 Ube Ind Ltd ルテニウム微粒子及びその製造法、並びにルテニウム微粒子を下層金属膜とした金属含有薄膜の製造方法
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US8129270B1 (en) 2008-12-10 2012-03-06 Novellus Systems, Inc. Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9548228B2 (en) 2009-08-04 2017-01-17 Lam Research Corporation Void free tungsten fill in different sized features
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
DE102009053889B4 (de) * 2009-11-20 2014-03-27 C. Hafner Gmbh + Co. Kg Verfahren zur Beschichtung einer metallischen Substratoberfläche mit einer durch einen ALD-Prozess aufgebrachten Materialschicht
KR101230951B1 (ko) * 2010-11-30 2013-02-07 에쓰대시오일 주식회사 표면확산유도 원자층 증착법
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
CN113862634A (zh) 2012-03-27 2021-12-31 诺发系统公司 钨特征填充
US20150364772A1 (en) * 2014-05-30 2015-12-17 GM Global Technology Operations LLC Method to prepare alloys of platinum-group metals and early transition metals
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
WO2017143180A1 (en) * 2016-02-19 2017-08-24 Tokyo Electron Limited Ruthenium metal deposition method for electrical connections
US10566211B2 (en) 2016-08-30 2020-02-18 Lam Research Corporation Continuous and pulsed RF plasma for etching metals
US10280519B2 (en) 2016-12-09 2019-05-07 Asm Ip Holding B.V. Thermal atomic layer etching processes
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10741442B2 (en) 2018-05-31 2020-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier layer formation for conductive feature
CN112969813B (zh) * 2018-11-08 2024-04-30 恩特格里斯公司 使用钌前体和还原气体的化学气相沉积方法
CN111286721A (zh) * 2018-12-06 2020-06-16 北京北方华创微电子装备有限公司 一种薄膜沉积方法及设备
WO2020146047A1 (en) * 2019-01-08 2020-07-16 Applied Materials, Inc. Pumping apparatus and method for substrate processing chambers
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
US11447866B2 (en) * 2020-06-17 2022-09-20 Applied Materials, Inc. High temperature chemical vapor deposition lid
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착
US12112983B2 (en) * 2020-08-26 2024-10-08 Macom Technology Solutions Holdings, Inc. Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
JP7517446B2 (ja) * 2020-09-29 2024-07-17 東京エレクトロン株式会社 半導体装置を製造する方法、及び半導体装置を製造する装置
KR20230033603A (ko) * 2021-09-01 2023-03-08 에이에스엠 아이피 홀딩 비.브이. 위치 설정 장치를 포함하는 가스 분배 어셈블리
KR102642469B1 (ko) * 2021-12-22 2024-03-04 (주)원익머트리얼즈 유기금속 전구체를 이용한 금속 박막 증착 방법
CN118786240A (zh) * 2022-02-03 2024-10-15 恩特格里斯公司 选择性沉积高导电性金属膜的方法
CN115613009A (zh) * 2022-11-03 2023-01-17 江苏微导纳米科技股份有限公司 原子层沉积设备
KR20240142101A (ko) 2023-03-21 2024-09-30 주성엔지니어링(주) 포집 장치 및 포집 방법
WO2025005521A1 (ko) * 2023-06-30 2025-01-02 주성엔지니어링(주) 전극 형성 방법
US20250022688A1 (en) * 2023-07-11 2025-01-16 Tokyo Electron Limited Plasma processing method and apparatus
CN117144339A (zh) * 2023-09-07 2023-12-01 北京北方华创微电子装备有限公司 薄膜沉积方法及设备
TWI890635B (zh) * 2024-12-02 2025-07-11 財團法人工業技術研究院 有機金屬化合物以及金屬釕膜之製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060171083A1 (en) * 2005-02-01 2006-08-03 Lee Wen-Yaung Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing

Family Cites Families (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US124154A (en) * 1872-02-27 Improvement in curtain-fixtures
US318417A (en) * 1885-05-19 Beadish j
US87339A (en) * 1869-03-02 Improvement in printers furniture
US190782A (en) * 1877-05-15 Improvement in rear sights for fire-arms
US137608A (en) * 1873-04-08 William guilfoyle
US152255A (en) * 1874-06-23 Improvement in transplanters
US54472A (en) * 1866-05-01 Improved blacking-brush
US124484A (en) * 1872-03-12 Improvement in centrifugal machines for draining sugar
US4891050A (en) * 1985-11-08 1990-01-02 Fuel Tech, Inc. Gasoline additives and gasoline containing soluble platinum group metal compounds and use in internal combustion engines
JPH0713304B2 (ja) * 1987-12-14 1995-02-15 日立化成工業株式会社 銅の表面処理法
US5382333A (en) * 1990-07-30 1995-01-17 Mitsubishi Gas Chemical Company, Inc. Process for producing copper clad laminate
US5106454A (en) * 1990-11-01 1992-04-21 Shipley Company Inc. Process for multilayer printed circuit board manufacture
US5865365A (en) * 1991-02-19 1999-02-02 Hitachi, Ltd. Method of fabricating an electronic circuit device
US5561082A (en) * 1992-07-31 1996-10-01 Kabushiki Kaisha Toshiba Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide
US5391517A (en) * 1993-09-13 1995-02-21 Motorola Inc. Process for forming copper interconnect structure
FI97731C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
US6228751B1 (en) * 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
DE69602586T2 (de) * 1995-11-22 2000-03-02 Firmenich S.A., Genf/Geneve Rutheniumkatalysatoren und deren verwendung zur asymmetrischen cyclopentenonhydrierung
US6015986A (en) * 1995-12-22 2000-01-18 Micron Technology, Inc. Rugged metal electrodes for metal-insulator-metal capacitors
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US6335280B1 (en) * 1997-01-13 2002-01-01 Asm America, Inc. Tungsten silicide deposition process
US6387805B2 (en) * 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
JPH1154496A (ja) 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
US6033584A (en) * 1997-12-22 2000-03-07 Advanced Micro Devices, Inc. Process for reducing copper oxide during integrated circuit fabrication
DE19815275B4 (de) * 1998-04-06 2009-06-25 Evonik Degussa Gmbh Alkylidenkomplexe des Rutheniums mit N-heterozyklischen Carbenliganden und deren Verwendung als hochaktive, selektive Katalysatoren für die Olefin-Metathese
US6541067B1 (en) * 1998-08-27 2003-04-01 Micron Technology, Inc. Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same
US6063705A (en) * 1998-08-27 2000-05-16 Micron Technology, Inc. Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
US6303500B1 (en) * 1999-02-24 2001-10-16 Micron Technology, Inc. Method and apparatus for electroless plating a contact pad
US20020000665A1 (en) * 1999-04-05 2002-01-03 Alexander L. Barr Semiconductor device conductive bump and interconnect barrier
US6184403B1 (en) * 1999-05-19 2001-02-06 Research Foundation Of State University Of New York MOCVD precursors based on organometalloid ligands
US6171910B1 (en) * 1999-07-21 2001-01-09 Motorola Inc. Method for forming a semiconductor device
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6040243A (en) * 1999-09-20 2000-03-21 Chartered Semiconductor Manufacturing Ltd. Method to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper diffusion
US6593653B2 (en) * 1999-09-30 2003-07-15 Novellus Systems, Inc. Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
KR100465982B1 (ko) * 1999-12-15 2005-01-13 지니텍 주식회사 촉매와 화학적 기상 증착 방법을 이용하여 구리 배선과박막을 형성하는 방법
US6842740B1 (en) * 1999-12-20 2005-01-11 Hewlett-Packard Development Company, L.P. Method for providing automatic payment when making duplicates of copyrighted material
US6551399B1 (en) * 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US6777331B2 (en) * 2000-03-07 2004-08-17 Simplus Systems Corporation Multilayered copper structure for improving adhesion property
JP5016767B2 (ja) * 2000-03-07 2012-09-05 エーエスエム インターナショナル エヌ．ヴェー． 傾斜薄膜の形成方法
US7419903B2 (en) * 2000-03-07 2008-09-02 Asm International N.V. Thin films
US6380080B2 (en) * 2000-03-08 2002-04-30 Micron Technology, Inc. Methods for preparing ruthenium metal films
JP3979791B2 (ja) * 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
WO2001088972A1 (en) * 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits
US6878628B2 (en) * 2000-05-15 2005-04-12 Asm International Nv In situ reduction of copper oxide prior to silicon carbide deposition
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US6679951B2 (en) * 2000-05-15 2004-01-20 Asm Intenational N.V. Metal anneal with oxidation prevention
US7494927B2 (en) * 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
JP2002016034A (ja) * 2000-06-30 2002-01-18 Mitsubishi Electric Corp 半導体装置の製造方法、及び半導体装置
US6395650B1 (en) * 2000-10-23 2002-05-28 International Business Machines Corporation Methods for forming metal oxide layers with enhanced purity
JP3598055B2 (ja) * 2000-11-08 2004-12-08 田中貴金属工業株式会社 ビス（アルキルシクロペンタジエニル）ルテニウムの製造方法及びその製造方法により製造されるビス（アルキルシクロペンタジエニル）ルテニウム並びにルテニウム薄膜又はルテニウム化合物薄膜の製造方法
KR100400765B1 (ko) * 2000-11-13 2003-10-08 엘지.필립스 엘시디 주식회사 박막 형성방법 및 이를 적용한 액정표시소자의 제조방법
EP1207387A1 (en) * 2000-11-20 2002-05-22 Institut Curie Multi-photon imaging installation.
KR100869326B1 (ko) * 2000-11-30 2008-11-18 에이에스엠 인터내셔널 엔.브이. 자기장치용 박막
US6464779B1 (en) * 2001-01-19 2002-10-15 Novellus Systems, Inc. Copper atomic layer chemical vapor desposition
KR100406534B1 (ko) * 2001-05-03 2003-11-20 주식회사 하이닉스반도체 루테늄 박막의 제조 방법
JP2003068676A (ja) * 2001-08-28 2003-03-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び半導体製造装置
JP4517565B2 (ja) * 2001-09-12 2010-08-04 東ソー株式会社 ルテニウム錯体、その製造方法、及び薄膜の製造方法
US20030059535A1 (en) * 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
KR100422597B1 (ko) 2001-11-27 2004-03-16 주식회사 하이닉스반도체 다마신 공정에 의해 형성된 캐패시터와 금속배선을 가지는반도체소자
KR20030043380A (ko) * 2001-11-28 2003-06-02 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100805843B1 (ko) 2001-12-28 2008-02-21 에이에스엠지니텍코리아 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템
US6824816B2 (en) * 2002-01-29 2004-11-30 Asm International N.V. Process for producing metal thin films by ALD
JP2004006699A (ja) * 2002-04-25 2004-01-08 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
DE60321271D1 (de) * 2002-06-10 2008-07-10 Imec Inter Uni Micro Electr Transistoren und Speicherkondensatoren enthaltend eine HfO2-Zusammensetzung mit erhöhter Dielektrizitätskonstante
KR100455297B1 (ko) * 2002-06-19 2004-11-06 삼성전자주식회사 무기물 나노튜브 제조방법
US6881260B2 (en) * 2002-06-25 2005-04-19 Micron Technology, Inc. Process for direct deposition of ALD RhO2
US6830983B2 (en) * 2002-08-29 2004-12-14 Micron Technology, Inc. Method of making an oxygen diffusion barrier for semiconductor devices using platinum, rhodium, or iridium stuffed with silicon oxide
KR100474072B1 (ko) * 2002-09-17 2005-03-10 주식회사 하이닉스반도체 귀금속 박막의 형성 방법
AU2003282836A1 (en) * 2002-10-15 2004-05-04 Rensselaer Polytechnic Institute Atomic layer deposition of noble metals
US6706581B1 (en) * 2002-10-29 2004-03-16 Taiwan Semiconductor Manufacturing Company Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films
US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
KR20060079144A (ko) * 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
US6939815B2 (en) * 2003-08-28 2005-09-06 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric
US8152922B2 (en) * 2003-08-29 2012-04-10 Asm America, Inc. Gas mixer and manifold assembly for ALD reactor
JP4770145B2 (ja) * 2003-10-07 2011-09-14 東京エレクトロン株式会社 成膜方法及び成膜装置
US20050085031A1 (en) * 2003-10-15 2005-04-21 Applied Materials, Inc. Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
KR100548999B1 (ko) * 2003-10-28 2006-02-02 삼성전자주식회사 수직으로 연장된 배선간 엠아이엠 커패시터를 갖는로직소자 및 그것을 제조하는 방법
US7618681B2 (en) * 2003-10-28 2009-11-17 Asm International N.V. Process for producing bismuth-containing oxide films
US7341946B2 (en) * 2003-11-10 2008-03-11 Novellus Systems, Inc. Methods for the electrochemical deposition of copper onto a barrier layer of a work piece
KR20060131874A (ko) * 2004-02-04 2006-12-20 프랙스에어 테크놀로지, 인코포레이티드 고밀도 핵생성 유기금속 화합물
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
WO2006028573A2 (en) * 2004-07-09 2006-03-16 Aviza Technology, Inc. Deposition of ruthenium and/or ruthenium oxide films
US7300873B2 (en) * 2004-08-13 2007-11-27 Micron Technology, Inc. Systems and methods for forming metal-containing layers using vapor deposition processes
JP2006097044A (ja) * 2004-09-28 2006-04-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
CN101010447B (zh) * 2004-10-15 2010-09-01 株式会社日立国际电气 基板处理装置及半导体装置的制造方法
US7476618B2 (en) * 2004-10-26 2009-01-13 Asm Japan K.K. Selective formation of metal layers in an integrated circuit
JP2006128288A (ja) * 2004-10-27 2006-05-18 Tokyo Electron Ltd 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
KR20060076714A (ko) 2004-12-28 2006-07-04 에이에스엠지니텍코리아 주식회사 원자층 증착기
US20060177601A1 (en) 2005-02-10 2006-08-10 Hyung-Sang Park Method of forming a ruthenium thin film using a plasma enhanced atomic layer deposition apparatus and the method thereof
US8025922B2 (en) * 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) * 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US20070059502A1 (en) * 2005-05-05 2007-03-15 Applied Materials, Inc. Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US7785658B2 (en) * 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
KR101379015B1 (ko) 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US20080124484A1 (en) * 2006-11-08 2008-05-29 Asm Japan K.K. Method of forming ru film and metal wiring structure
US8003838B2 (en) * 2007-04-03 2011-08-23 Firmenich Sa 1,4-hydrogenation of dienes with Ru complexes
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
KR101544198B1 (ko) * 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7655564B2 (en) * 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
US8084104B2 (en) * 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060171083A1 (en) * 2005-02-01 2006-08-03 Lee Wen-Yaung Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing

Also Published As

Publication number Publication date
TW200814200A (en) 2008-03-16
JP2008057042A (ja) 2008-03-13
KR20080020953A (ko) 2008-03-06
US20080318417A1 (en) 2008-12-25
JP5196915B2 (ja) 2013-05-15
US20080054472A1 (en) 2008-03-06
US7435484B2 (en) 2008-10-14

Similar Documents

Publication Publication Date Title
TWI450335B (zh) 在反應室中在基板上沈積釕薄膜之方法及由釕薄膜形成之結構
US20080124484A1 (en) Method of forming ru film and metal wiring structure
US7785658B2 (en) Method for forming metal wiring structure
CN102265383B (zh) 用于沉积具有降低电阻率及改良表面形态的钨膜的方法
JP5173098B2 (ja) ダマシン・メタライゼーションのためのコンフォーマルライニング層
JP6813983B2 (ja) アルミニウム及び窒素を含む材料の選択的堆積
JP4919535B2 (ja) ハロゲン化タンタル前駆物質からの熱的ＣＶＤ ＴａＮフイルムのプラズマ処理
KR101506019B1 (ko) 금속 카바이드 막의 기상 증착
US8765601B2 (en) Post deposition treatments for CVD cobalt films
US20070054487A1 (en) Atomic layer deposition processes for ruthenium materials
TWI645511B (zh) 用於銅阻障層應用之摻雜的氮化鉭
JP2007173824A (ja) 原子層成長及び化学気相成長による薄膜形成方法
JP7345546B2 (ja) ルテニウム前駆体を使用したｐｅａｌｄプロセス
US20100120245A1 (en) Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
US20090087339A1 (en) METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
US20070077750A1 (en) Atomic layer deposition processes for ruthenium materials
JP2004273764A (ja) タングステン膜の形成方法
EP2837022A1 (en) Methods for depositing manganese and manganese nitrides
CN112969813B (zh) 使用钌前体和还原气体的化学气相沉积方法
CN102301454A (zh) 成膜方法和等离子体成膜装置
KR101217393B1 (ko) 성막 방법, 플라즈마 처리 장치 및 기억 매체
TWI872188B (zh) 沉積於釕-鈦氮化物膜上之含釕膜及其形成方法
US20070207611A1 (en) Noble metal precursors for copper barrier and seed layer
US20070082130A1 (en) Method for foming metal wiring structure
JP2025145555A (ja) Ｒｕ薄膜の選択的成膜方法