TWI437048B - 倍半矽氧烷樹脂 - Google Patents
倍半矽氧烷樹脂 Download PDFInfo
- Publication number
- TWI437048B TWI437048B TW97146971A TW97146971A TWI437048B TW I437048 B TWI437048 B TW I437048B TW 97146971 A TW97146971 A TW 97146971A TW 97146971 A TW97146971 A TW 97146971A TW I437048 B TWI437048 B TW I437048B
- Authority
- TW
- Taiwan
- Prior art keywords
- value
- group
- composition
- resin
- solvent
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
- C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2109708P | 2008-01-15 | 2008-01-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200932835A TW200932835A (en) | 2009-08-01 |
| TWI437048B true TWI437048B (zh) | 2014-05-11 |
Family
ID=40885585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97146971A TWI437048B (zh) | 2008-01-15 | 2008-12-03 | 倍半矽氧烷樹脂 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9023433B2 (enExample) |
| EP (1) | EP2238198A4 (enExample) |
| JP (1) | JP2011510133A (enExample) |
| KR (1) | KR20100114075A (enExample) |
| CN (1) | CN101910253B (enExample) |
| TW (1) | TWI437048B (enExample) |
| WO (1) | WO2009091440A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101970540B (zh) * | 2008-03-05 | 2014-07-23 | 陶氏康宁公司 | 倍半硅氧烷树脂 |
| CN102245722B (zh) * | 2008-12-10 | 2014-12-10 | 陶氏康宁公司 | 可转换的抗反射涂层 |
| WO2010068336A1 (en) | 2008-12-10 | 2010-06-17 | Dow Corning Corporation | Silsesquioxane resins |
| JP5765538B2 (ja) * | 2010-05-13 | 2015-08-19 | 日産化学工業株式会社 | 熱硬化性樹脂組成物及びディスプレイ装置 |
| CN101891893B (zh) * | 2010-07-23 | 2012-01-04 | 深圳市安品有机硅材料有限公司 | Led封装用苯基氢基硅树脂的制备方法 |
| US9086626B2 (en) * | 2011-03-29 | 2015-07-21 | Dow Corning Corporation | Photo-patternable and developable silsesquioxane resins for use in device fabrication |
| US9588257B2 (en) * | 2011-07-11 | 2017-03-07 | Tokuyama Corporation | Photochromic curable composition |
| US20140178698A1 (en) | 2012-12-21 | 2014-06-26 | 3M Innovative Properties Company | Curable silsesquioxane polymers, compositions, articles, and methods |
| JP2016507613A (ja) * | 2012-12-21 | 2016-03-10 | スリーエム イノベイティブ プロパティズ カンパニー | 硬化性シルセスキオキサンポリマー、組成物、物品、及び方法 |
| US8999625B2 (en) | 2013-02-14 | 2015-04-07 | International Business Machines Corporation | Silicon-containing antireflective coatings including non-polymeric silsesquioxanes |
| KR101665308B1 (ko) * | 2014-06-05 | 2016-10-13 | 한국과학기술연구원 | 양이온 경화성을 갖는 폴리에폭시계실세스퀴옥산 및 이를 이용한 고강도 필름 |
| CN104356392B (zh) * | 2014-11-07 | 2017-04-19 | 广州市白云化工实业有限公司 | 笼型枝状有机硅树脂及其制备方法和应用 |
| TWI742160B (zh) | 2016-09-30 | 2021-10-11 | 美商道康寧公司 | 橋接聚矽氧樹脂、膜、電子裝置及相關方法 |
| TWI747956B (zh) | 2016-09-30 | 2021-12-01 | 美商道康寧公司 | 橋接聚矽氧樹脂、膜、電子裝置及相關方法 |
| KR20200037295A (ko) * | 2017-07-28 | 2020-04-08 | 다우 실리콘즈 코포레이션 | 포지티브 포토레지스트 특징과 네거티브 포토레지스트 특징 둘 모두를 갖는 실세스퀴옥산 조성물 |
| WO2019235072A1 (ja) * | 2018-06-06 | 2019-12-12 | 富士フイルム株式会社 | 組成物、ハードコートフィルム、ハードコートフィルムを備えた物品、及び画像表示装置 |
| WO2020021931A1 (ja) * | 2018-07-27 | 2020-01-30 | 富士フイルム株式会社 | ハードコートフィルム、ハードコートフィルムを備えた物品、及び画像表示装置 |
| JP7119997B2 (ja) * | 2018-12-28 | 2022-08-17 | 信越化学工業株式会社 | 感光性樹脂組成物、積層体、及びパターン形成方法 |
| CN110452384B (zh) * | 2019-08-30 | 2020-10-23 | 北京理工大学 | 一种笼型结构环氧基苯基硅倍半氧烷及其制备方法 |
| CN111100463A (zh) * | 2019-12-26 | 2020-05-05 | 广东盈骅新材料科技有限公司 | 环氧改性硅树脂组合物及其应用 |
| CN115485350B (zh) | 2020-05-07 | 2025-04-22 | 美国陶氏有机硅公司 | 有机硅混合压敏粘合剂及其制备方法和在不均匀表面上的用途 |
| CN115516056B (zh) | 2020-05-07 | 2025-04-25 | 美国陶氏有机硅公司 | 有机硅混合压敏粘合剂及其制备方法和在用于(光)电子装置制造的保护性膜中使用的方法 |
| KR20230070489A (ko) | 2020-09-22 | 2023-05-23 | 다우 실리콘즈 코포레이션 | 경화성 실리콘-(메트)아크릴레이트 조성물 및 이의 제조 및 사용 방법 |
Family Cites Families (90)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587138A (en) * | 1984-11-09 | 1986-05-06 | Intel Corporation | MOS rear end processing |
| US5010159A (en) * | 1989-09-01 | 1991-04-23 | Dow Corning Corporation | Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol |
| US5100503A (en) * | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
| US5210168A (en) * | 1992-04-02 | 1993-05-11 | Dow Corning Corporation | Process for forming siloxane bonds |
| EP0568476B1 (en) * | 1992-04-30 | 1995-10-11 | International Business Machines Corporation | Silicon-containing positive resist and method of using the same in thin film packaging technology |
| JPH0656560A (ja) | 1992-08-10 | 1994-03-01 | Sony Corp | Sog組成物及びそれを用いた半導体装置の製造方法 |
| US5484867A (en) * | 1993-08-12 | 1996-01-16 | The University Of Dayton | Process for preparation of polyhedral oligomeric silsesquioxanes and systhesis of polymers containing polyhedral oligomeric silsesqioxane group segments |
| US5412053A (en) * | 1993-08-12 | 1995-05-02 | The University Of Dayton | Polymers containing alternating silsesquioxane and bridging group segments and process for their preparation |
| US5441765A (en) * | 1993-09-22 | 1995-08-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
| JP3499032B2 (ja) * | 1995-02-02 | 2004-02-23 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物、その硬化方法及びパターン形成方法 |
| JP3324360B2 (ja) * | 1995-09-25 | 2002-09-17 | 信越化学工業株式会社 | ポリシロキサン化合物及びポジ型レジスト材料 |
| GB9521996D0 (en) * | 1995-10-27 | 1996-01-03 | Boc Group Plc | Air separation |
| JPH09124794A (ja) * | 1995-11-06 | 1997-05-13 | Dow Corning Asia Ltd | 有機光機能材を含有するポリシロキサン樹脂組成物及びそれから得られる透明な光機能素子 |
| JP3192947B2 (ja) * | 1995-11-16 | 2001-07-30 | 東京応化工業株式会社 | シリカ系被膜形成用塗布液の製造方法 |
| JPH09221630A (ja) | 1996-02-13 | 1997-08-26 | Showa Denko Kk | 塗料組成物及びそれを用いて得られる塗膜 |
| US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
| US6057239A (en) * | 1997-12-17 | 2000-05-02 | Advanced Micro Devices, Inc. | Dual damascene process using sacrificial spin-on materials |
| US6962727B2 (en) * | 1998-03-20 | 2005-11-08 | Honeywell International Inc. | Organosiloxanes |
| US6344284B1 (en) * | 1998-04-10 | 2002-02-05 | Organic Display Technology | Organic electroluminescent materials and devices made from such materials |
| US6156640A (en) * | 1998-07-14 | 2000-12-05 | United Microelectronics Corp. | Damascene process with anti-reflection coating |
| US6087064A (en) * | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
| US6177143B1 (en) * | 1999-01-06 | 2001-01-23 | Allied Signal Inc | Electron beam treatment of siloxane resins |
| US6461955B1 (en) * | 1999-04-29 | 2002-10-08 | Texas Instruments Incorporated | Yield improvement of dual damascene fabrication through oxide filling |
| US6281285B1 (en) * | 1999-06-09 | 2001-08-28 | Dow Corning Corporation | Silicone resins and process for synthesis |
| US6509259B1 (en) * | 1999-06-09 | 2003-01-21 | Alliedsignal Inc. | Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices |
| AU5600200A (en) * | 1999-06-10 | 2001-01-02 | Allied-Signal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| WO2003044078A1 (en) | 2001-11-15 | 2003-05-30 | Honeywell International Inc. | Anti-reflective coatings for photolithography and methods of preparation thereof |
| US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| US6268457B1 (en) * | 1999-06-10 | 2001-07-31 | Allied Signal, Inc. | Spin-on glass anti-reflective coatings for photolithography |
| US6890448B2 (en) * | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
| KR100708492B1 (ko) | 1999-06-15 | 2007-04-16 | 아이피.원 피티와이. 엘티디. | 비복귀형 밸브 |
| US6329118B1 (en) * | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
| US6982006B1 (en) * | 1999-10-19 | 2006-01-03 | Boyers David G | Method and apparatus for treating a substrate with an ozone-solvent solution |
| US6359096B1 (en) * | 1999-10-25 | 2002-03-19 | Dow Corning Corporation | Silicone resin compositions having good solution solubility and stability |
| KR100355604B1 (ko) * | 1999-12-23 | 2002-10-12 | 주식회사 하이닉스반도체 | 난반사 방지막용 중합체와 그 제조방법 |
| JP3795333B2 (ja) * | 2000-03-30 | 2006-07-12 | 東京応化工業株式会社 | 反射防止膜形成用組成物 |
| US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
| US6420084B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Mask-making using resist having SIO bond-containing polymer |
| US20030176614A1 (en) * | 2000-06-30 | 2003-09-18 | Nigel Hacker | Organohydridosiloxane resins with high organic content |
| US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
| JP4141625B2 (ja) * | 2000-08-09 | 2008-08-27 | 東京応化工業株式会社 | ポジ型レジスト組成物およびそのレジスト層を設けた基材 |
| EP1197998A3 (en) * | 2000-10-10 | 2005-12-21 | Shipley Company LLC | Antireflective porogens |
| TW538319B (en) * | 2000-10-10 | 2003-06-21 | Shipley Co Llc | Antireflective composition, method for forming antireflective coating layer, and method for manufacturing electronic device |
| JP3931951B2 (ja) | 2001-03-13 | 2007-06-20 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| JP2002299441A (ja) * | 2001-03-30 | 2002-10-11 | Jsr Corp | デュアルダマシン構造の形成方法 |
| US6589711B1 (en) * | 2001-04-04 | 2003-07-08 | Advanced Micro Devices, Inc. | Dual inlaid process using a bilayer resist |
| JP5225528B2 (ja) | 2001-05-30 | 2013-07-03 | 株式会社Adeka | ケイ素含有重合体の製造方法 |
| JP2003025510A (ja) * | 2001-07-16 | 2003-01-29 | Shin Etsu Chem Co Ltd | 反射防止性及び耐擦傷性を有する多層積層体 |
| US6746530B2 (en) * | 2001-08-02 | 2004-06-08 | Chunghwa Pictures Tubes, Ltd. | High contrast, moisture resistant antistatic/antireflective coating for CRT display screen |
| US20030096090A1 (en) * | 2001-10-22 | 2003-05-22 | Boisvert Ronald Paul | Etch-stop resins |
| CN1606713B (zh) | 2001-11-15 | 2011-07-06 | 霍尼韦尔国际公司 | 用于照相平版印刷术的旋涂抗反射涂料 |
| KR100818678B1 (ko) | 2001-11-16 | 2008-04-01 | 허니웰 인터내셔널 인코포레이티드 | 포토리소그라피용 스핀온 유리 반사 방지 피막 |
| TW200307709A (en) * | 2002-02-19 | 2003-12-16 | Honeywell Int Inc | Organosiloxanes |
| US6730454B2 (en) | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
| WO2004014924A1 (ja) * | 2002-08-07 | 2004-02-19 | Chisso Corporation | ケイ素化合物 |
| WO2004044025A2 (en) | 2002-11-12 | 2004-05-27 | Honeywell International Inc | Anti-reflective coatings for photolithography and methods of preparation thereof |
| KR100639862B1 (ko) * | 2002-12-02 | 2006-10-31 | 토쿄오오카코교 가부시기가이샤 | 반사방지막형성용 조성물 |
| TW200505966A (en) | 2003-04-02 | 2005-02-16 | Dow Global Technologies Inc | Organosilicate resin formulation for use in microelectronic devices |
| JP2004361692A (ja) * | 2003-04-07 | 2004-12-24 | Dow Corning Asia Ltd | 光伝送部材用硬化性オルガノポリシロキサン樹脂組成物、オルガノポリシロキサン樹脂硬化物からなる光伝送部材および光伝送部材の製造方法 |
| CN100451070C (zh) * | 2003-04-07 | 2009-01-14 | 陶氏康宁公司 | 用于光波导的固化性有机聚硅氧烷树脂组合物,光波导及其制造方法 |
| KR101156200B1 (ko) * | 2003-05-23 | 2012-06-18 | 다우 코닝 코포레이션 | 습식 에치율이 높은 실록산 수지계 반사 방지 피막 조성물 |
| US7202013B2 (en) * | 2003-06-03 | 2007-04-10 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
| CN100375908C (zh) * | 2003-06-18 | 2008-03-19 | 旭化成株式会社 | 抗反射膜 |
| WO2005005238A1 (en) | 2003-07-02 | 2005-01-20 | Keith Gilstrap | Seatpost mounted bicycle wheel holding device |
| AU2003272401A1 (en) | 2003-09-15 | 2005-04-27 | Sunco Products, Inc. | Sheeting system |
| EP1668698A1 (de) | 2003-09-29 | 2006-06-14 | Siemens Aktiengesellschaft | Plastisch verformbarer kühlkörper für elektrische und/oder elektronische bauelemente |
| US8101015B2 (en) * | 2003-10-07 | 2012-01-24 | Honeywell International Inc. | Coatings and hard mask compositions for integrated circuit applications methods of production and uses thereof |
| SG119201A1 (en) | 2003-10-13 | 2006-02-28 | Sportiv Tech Lab Pte Ltd | Utility garment |
| WO2005076323A1 (ja) * | 2004-02-10 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法 |
| EP1769018B1 (en) * | 2004-07-16 | 2007-11-21 | Dow Corning Corporation | Radiation sensitive silicone resin composition |
| US20060019468A1 (en) | 2004-07-21 | 2006-01-26 | Beatty John J | Method of manufacturing a plurality of electronic assemblies |
| JP2006117867A (ja) * | 2004-10-25 | 2006-05-11 | Takemoto Oil & Fat Co Ltd | 有機シリコーン微粒子、有機シリコーン微粒子の製造方法、高分子材料改質剤及び化粧品原料 |
| US7756384B2 (en) * | 2004-11-08 | 2010-07-13 | Dow Corning Corporation | Method for forming anti-reflective coating |
| US20060128163A1 (en) * | 2004-12-14 | 2006-06-15 | International Business Machines Corporation | Surface treatment of post-rie-damaged p-osg and other damaged materials |
| CN101073039B (zh) | 2004-12-17 | 2011-12-14 | 陶氏康宁公司 | 形成抗反射涂层的方法 |
| KR101253487B1 (ko) * | 2004-12-17 | 2013-04-11 | 다우 코닝 코포레이션 | 반사방지막의 형성방법 |
| KR101191098B1 (ko) | 2004-12-17 | 2012-10-15 | 다우 코닝 코포레이션 | 실록산 수지 피복물 |
| JP4688882B2 (ja) | 2004-12-17 | 2011-05-25 | ダウ・コーニング・コーポレイション | 反射防止膜の形成方法、レジスト画像の形成方法、パターンの形成方法及び電子デバイスの製造方法 |
| KR101324052B1 (ko) | 2006-02-13 | 2013-11-01 | 다우 코닝 코포레이션 | 반사방지 코팅 재료 |
| WO2007094849A2 (en) | 2006-02-13 | 2007-08-23 | Dow Corning Corporation | Antireflective coating material |
| US20070212886A1 (en) * | 2006-03-13 | 2007-09-13 | Dong Seon Uh | Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions |
| US20070298349A1 (en) * | 2006-06-22 | 2007-12-27 | Ruzhi Zhang | Antireflective Coating Compositions Comprising Siloxane Polymer |
| US7736837B2 (en) * | 2007-02-20 | 2010-06-15 | Az Electronic Materials Usa Corp. | Antireflective coating composition based on silicon polymer |
| CN101622297A (zh) * | 2007-02-26 | 2010-01-06 | Az电子材料美国公司 | 制备硅氧烷聚合物的方法 |
| CN101910255B (zh) | 2008-01-08 | 2013-07-10 | 道康宁东丽株式会社 | 倍半硅氧烷树脂 |
| JP5581225B2 (ja) * | 2008-03-04 | 2014-08-27 | ダウ・コーニング・コーポレイション | シルセスキオキサン樹脂 |
| CN101970540B (zh) * | 2008-03-05 | 2014-07-23 | 陶氏康宁公司 | 倍半硅氧烷树脂 |
| CN102245722B (zh) * | 2008-12-10 | 2014-12-10 | 陶氏康宁公司 | 可转换的抗反射涂层 |
| WO2010068336A1 (en) | 2008-12-10 | 2010-06-17 | Dow Corning Corporation | Silsesquioxane resins |
| US20110236835A1 (en) * | 2008-12-10 | 2011-09-29 | Peng-Fei Fu | Silsesquioxane Resins |
-
2008
- 2008-11-18 US US12/811,224 patent/US9023433B2/en active Active
- 2008-11-18 KR KR20107017944A patent/KR20100114075A/ko not_active Ceased
- 2008-11-18 CN CN200880124813.4A patent/CN101910253B/zh active Active
- 2008-11-18 WO PCT/US2008/083849 patent/WO2009091440A1/en not_active Ceased
- 2008-11-18 JP JP2010543104A patent/JP2011510133A/ja active Pending
- 2008-11-18 EP EP08870812A patent/EP2238198A4/en not_active Withdrawn
- 2008-12-03 TW TW97146971A patent/TWI437048B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200932835A (en) | 2009-08-01 |
| EP2238198A4 (en) | 2011-11-16 |
| CN101910253A (zh) | 2010-12-08 |
| WO2009091440A1 (en) | 2009-07-23 |
| KR20100114075A (ko) | 2010-10-22 |
| EP2238198A1 (en) | 2010-10-13 |
| US9023433B2 (en) | 2015-05-05 |
| US20100279025A1 (en) | 2010-11-04 |
| JP2011510133A (ja) | 2011-03-31 |
| CN101910253B (zh) | 2013-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI437048B (zh) | 倍半矽氧烷樹脂 | |
| TWI406099B (zh) | 抗反射塗料材料 | |
| JP5021984B2 (ja) | 反射防止ハードマスク組成物 | |
| TWI600724B (zh) | 可濕式剝去之含矽抗反射劑 | |
| TWI449756B (zh) | 倍半矽氧烷樹脂 | |
| JP4688882B2 (ja) | 反射防止膜の形成方法、レジスト画像の形成方法、パターンの形成方法及び電子デバイスの製造方法 | |
| TWI450931B (zh) | 倍半矽氧烷樹脂 | |
| TWI460232B (zh) | 倍半矽氧烷樹脂 | |
| CN103443161B (zh) | 抗反射涂层组合物及其方法 | |
| JP2018092170A (ja) | 下層のための芳香族樹脂 | |
| KR101253487B1 (ko) | 반사방지막의 형성방법 | |
| CN102439522A (zh) | 用于反向图案化的方法和材料 | |
| TW200815498A (en) | Crosslinkable prepolymer, process for production thereof, and use thereof | |
| JP2008524651A (ja) | 反射防止膜の形成方法 | |
| WO2018056279A1 (ja) | 化合物、樹脂、組成物、並びにレジストパターン形成方法及びパターン形成方法 | |
| WO2018056277A1 (ja) | 化合物、樹脂、組成物、並びにレジストパターン形成方法及び回路パターン形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |