TWI423422B - 在體矽上製造１ｔ-動態隨機存取記憶體之方法 - Google Patents

在體矽上製造１ｔ-動態隨機存取記憶體之方法 Download PDF

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Publication number
TWI423422B
TWI423422B TW096108777A TW96108777A TWI423422B TW I423422 B TWI423422 B TW I423422B TW 096108777 A TW096108777 A TW 096108777A TW 96108777 A TW96108777 A TW 96108777A TW I423422 B TWI423422 B TW I423422B
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TW
Taiwan
Prior art keywords
integrated circuit
layer
doped region
gate
region
Prior art date
Application number
TW096108777A
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English (en)
Chinese (zh)
Other versions
TW200742039A (en
Inventor
Wu Albert
Chen Roawen
Original Assignee
Marvell World Trade Ltd
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Publication date
Application filed by Marvell World Trade Ltd filed Critical Marvell World Trade Ltd
Publication of TW200742039A publication Critical patent/TW200742039A/zh
Application granted granted Critical
Publication of TWI423422B publication Critical patent/TWI423422B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
TW096108777A 2006-03-15 2007-03-14 在體矽上製造１ｔ-動態隨機存取記憶體之方法 TWI423422B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78247906P 2006-03-15 2006-03-15
US11/674,008 US8008137B2 (en) 2006-03-15 2007-02-12 Method for fabricating 1T-DRAM on bulk silicon

Publications (2)

Publication Number Publication Date
TW200742039A TW200742039A (en) 2007-11-01
TWI423422B true TWI423422B (zh) 2014-01-11

Family

ID=38077174

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108777A TWI423422B (zh) 2006-03-15 2007-03-14 在體矽上製造１ｔ-動態隨機存取記憶體之方法

Country Status (5)

Country Link
US (1) US8008137B2 (https=)
EP (1) EP1835535A3 (https=)
JP (1) JP2007294897A (https=)
CN (1) CN101038919B (https=)
TW (1) TWI423422B (https=)

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US8278167B2 (en) 2008-12-18 2012-10-02 Micron Technology, Inc. Method and structure for integrating capacitor-less memory cell with logic
TWI433302B (zh) 2009-03-03 2014-04-01 旺宏電子股份有限公司 積體電路自對準三度空間記憶陣列及其製作方法
WO2011080998A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101884031B1 (ko) * 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008304A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012256821A (ja) 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI539453B (zh) * 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI564890B (zh) 2011-01-26 2017-01-01 半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
WO2012102182A1 (en) * 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9012993B2 (en) * 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102446958B (zh) * 2011-11-08 2014-11-05 上海华力微电子有限公司 绝缘体上碳硅-锗硅异质结1t-dram结构及形成方法
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9287257B2 (en) * 2014-05-30 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Power gating for three dimensional integrated circuits (3DIC)
US9281305B1 (en) * 2014-12-05 2016-03-08 National Applied Research Laboratories Transistor device structure
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
US10147722B2 (en) * 2016-08-12 2018-12-04 Renesas Electronics America Inc. Isolated circuit formed during back end of line process

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US20050280156A1 (en) * 2004-06-21 2005-12-22 Sang-Yun Lee Semiconductor device with base support structure

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Also Published As

Publication number Publication date
US8008137B2 (en) 2011-08-30
CN101038919A (zh) 2007-09-19
CN101038919B (zh) 2012-01-04
EP1835535A3 (en) 2010-07-14
JP2007294897A (ja) 2007-11-08
EP1835535A2 (en) 2007-09-19
US20070215906A1 (en) 2007-09-20
TW200742039A (en) 2007-11-01

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