JP4431401B2 - 極薄垂直ボデイトランジスタを有する折り返しビットラインdram - Google Patents
極薄垂直ボデイトランジスタを有する折り返しビットラインdram Download PDFInfo
- Publication number
- JP4431401B2 JP4431401B2 JP2003581264A JP2003581264A JP4431401B2 JP 4431401 B2 JP4431401 B2 JP 4431401B2 JP 2003581264 A JP2003581264 A JP 2003581264A JP 2003581264 A JP2003581264 A JP 2003581264A JP 4431401 B2 JP4431401 B2 JP 4431401B2
- Authority
- JP
- Japan
- Prior art keywords
- pillar
- pillars
- forming
- ultra
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 claims description 81
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- 229920005591 polysilicon Polymers 0.000 claims description 34
- 239000003990 capacitor Substances 0.000 claims description 33
- 210000000746 body region Anatomy 0.000 claims description 31
- 239000012212 insulator Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000007790 solid phase Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 114
- 238000003860 storage Methods 0.000 description 27
- 239000010408 film Substances 0.000 description 16
- 108091006146 Channels Proteins 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
Description
ラー上にポリシリコン層を堆積させ、ポリシリコン層に方向性エッチングを施してピラーの側壁上だけにポリシリコン層の一部が残るようにし、ポリシリコン層にアニーリングを施して、ポリシリコン層をエピタキシャル再成長させ、第1及び第2の半導体コンタクト層からポリシリコン層内へドーパントを拡散させて、極薄垂直ボデイ領域により分離された第1及び第2の極薄垂直ソース/ドレイン領域を形成し、極薄垂直ボデイ領域上にゲート絶縁層を形成し、ゲート絶縁層上にゲートを形成するステップを含み、アレイの各メモリセルを形成するステップは、さらに、第2の半導体コンタクト層と結合するキャパシタを形成するステップを含み、DRAMデバイス形成方法は、さらに、メモリセルアレイの各行の隣接するピラーの第1のコンタクト層を相互接続するためにピラーの下方に半導体材料の複数の埋め込みビットラインを形成するステップと、ピラーの列間のトレンチに隣接する垂直トランジスタの極薄垂直ボデイ領域にアドレスするために各々がトレンチ内を複数の埋め込みビットラインに対して直角に延びる複数のワードラインを形成するステップとを含む、折り返しビットラインDRAMデバイスの形成方法も提供される。
Claims (13)
- 折り返しビットラインDRAMデバイスであって、
行列状に形成されたメモリセルのアレイを有し、
メモリセルアレイの各メモリセルは、
半導体基板から外方に延び、酸化物層より分離された第1の半導体コンタクト層及び第2の半導体コンタクト層を有するピラーと、
ピラーの側部に沿って形成された垂直トランジスタと、
ピラーの第2の半導体コンタクト層と結合するキャパシタとを含み、
垂直トランジスタは、
第1の半導体コンタクト層に結合された第1の極薄垂直ソース/ドレイン領域と、
第2の半導体コンタクト層に結合された第2の極薄垂直ソース/ドレイン領域と、
酸化物層に対向し、第1と第2の極薄垂直ソース/ドレイン領域を結合する極薄垂直ボデイ領域と、
極薄垂直ボデイ領域上のゲート絶縁層と、
ゲート絶縁層上のゲートとより成り、
さらに、半導体材料により形成され、メモリセルアレイの各行の隣接するピラーの第1の半導体コンタクト層を相互接続するためにピラーの下方に位置する複数の埋め込みビットラインと、
各々がピラーの列間のトレンチに隣接する垂直トランジスタの極薄垂直ボデイ領域にアドレスするためにトレンチ内を複数の埋め込みビットラインに対して直角に延びる複数のワードラインとより成る折り返しビットラインDRAMデバイス。 - 極薄垂直ボデイ領域は固相エピタキシャル成長により形成される請求項1の折り返しビットラインDRAMデバイス。
- 極薄垂直ボデイ領域はp型チャンネルを有する請求項1の折り返しビットラインDRAMデバイス。
- 半導体基板はシリコン・オン・インシュレーター基板を含む請求項1の折り返しビットラインDRAMデバイス。
- ゲートはトレンチ内においてピラーの上面より低いところに形成されている請求項1の折り返しビットラインDRAMデバイス。
- 垂直トランジスタが形成されたピラーの側部とは反対側のピラーの側部に第2の垂直トランジスタが設けられている請求項1の折り返しビットラインDRAMデバイス。
- 埋め込みビットラインは第1の半導体コンタクト層に一体的に形成され、別の酸化物層により半導体基板から分離されている請求項1の折り返しビットラインDRAMデバイス。
- 折り返しビットラインDRAMデバイスを形成する方法であって、
行列状にメモリセルのアレイを形成するステップを含み、
アレイの各メモリセルを形成するステップは、
半導体基板から外方に延び、第1の半導体コンタクト層と第2の半導体コンタクト層とが絶縁層により分離されたピラーを形成するステップと、
ピラーの側部に沿って垂直トランジスタを形成するステップとを含み、
垂直トランジスタ形成ステップは、
ピラー上にポリシリコン層を堆積させ、ポリシリコン層に方向性エッチングを施してピラーの側壁上だけにポリシリコン層の一部が残るようにし、
ポリシリコン層にアニーリングを施して、ポリシリコン層をエピタキシャル再成長させ、
第1及び第2の半導体コンタクト層からポリシリコン層内へドーパントを拡散させて、極薄垂直ボデイ領域により分離された第1及び第2の極薄垂直ソース/ドレイン領域を形成し、
極薄垂直ボデイ領域上にゲート絶縁層を形成し、
ゲート絶縁層上にゲートを形成するステップを含み、
アレイの各メモリセルを形成するステップは、さらに
第2の半導体コンタクト層と結合するキャパシタを形成するステップを含み、
DRAMデバイス形成方法は、さらに、
メモリセルアレイの各行の隣接するピラーの第1のコンタクト層を相互接続するためにピラーの下方に半導体材料の複数の埋め込みビットラインを形成するステップと、
ピラーの列間のトレンチに隣接する垂直トランジスタの極薄垂直ボデイ領域にアドレスするために各々がトレンチ内を複数の埋め込みビットラインに対して直角に延びる複数のワードラインを形成するステップとを含む、折り返しビットラインDRAMデバイスの形成方法。 - 半導体基板から外方に延びるピラーを形成するステップは、シリコン・オン・インシュレーター基板から外方に延びるピラーを形成するステップを含む請求項8の方法。
- 垂直トランジスタが形成されたピラーの側部とは反対側のピラーの側部に沿って第2の垂直トランジスタを形成するステップをさらに含む請求項8の方法。
- トレンチの両側の隣接するピラー上に一対の垂直トランジスタが形成される請求項10の方法。
- トレンチに2つの別個のワードラインを形成するステップをさらに含む請求項11の方法。
- ワードラインはトレンチ内においてピラーの上面より低いところに形成される請求項12の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/780,130 US6559491B2 (en) | 2001-02-09 | 2001-02-09 | Folded bit line DRAM with ultra thin body transistors |
PCT/US2002/003231 WO2003083947A2 (en) | 2001-02-09 | 2002-02-04 | Folded bit line dram with vertical ultra thin body transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005520347A JP2005520347A (ja) | 2005-07-07 |
JP4431401B2 true JP4431401B2 (ja) | 2010-03-17 |
Family
ID=25118705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003581264A Expired - Fee Related JP4431401B2 (ja) | 2001-02-09 | 2002-02-04 | 極薄垂直ボデイトランジスタを有する折り返しビットラインdram |
Country Status (8)
Country | Link |
---|---|
US (3) | US6559491B2 (ja) |
EP (1) | EP1419532A4 (ja) |
JP (1) | JP4431401B2 (ja) |
KR (1) | KR100594524B1 (ja) |
CN (1) | CN100492644C (ja) |
AU (1) | AU2002240244A1 (ja) |
SG (1) | SG161735A1 (ja) |
WO (1) | WO2003083947A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10163910B2 (en) | 2016-09-28 | 2018-12-25 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6383924B1 (en) * | 2000-12-13 | 2002-05-07 | Micron Technology, Inc. | Method of forming buried conductor patterns by surface transformation of empty spaces in solid state materials |
US6566682B2 (en) * | 2001-02-09 | 2003-05-20 | Micron Technology, Inc. | Programmable memory address and decode circuits with ultra thin vertical body transistors |
US6559491B2 (en) * | 2001-02-09 | 2003-05-06 | Micron Technology, Inc. | Folded bit line DRAM with ultra thin body transistors |
US6496034B2 (en) * | 2001-02-09 | 2002-12-17 | Micron Technology, Inc. | Programmable logic arrays with ultra thin body transistors |
US6531727B2 (en) * | 2001-02-09 | 2003-03-11 | Micron Technology, Inc. | Open bit line DRAM with ultra thin body transistors |
US6649476B2 (en) | 2001-02-15 | 2003-11-18 | Micron Technology, Inc. | Monotonic dynamic-static pseudo-NMOS logic circuit and method of forming a logic gate array |
CA2340985A1 (en) * | 2001-03-14 | 2002-09-14 | Atmos Corporation | Interleaved wordline architecture |
US7142577B2 (en) * | 2001-05-16 | 2006-11-28 | Micron Technology, Inc. | Method of forming mirrors by surface transformation of empty spaces in solid state materials and structures thereon |
US6898362B2 (en) * | 2002-01-17 | 2005-05-24 | Micron Technology Inc. | Three-dimensional photonic crystal waveguide structure and method |
US7132348B2 (en) * | 2002-03-25 | 2006-11-07 | Micron Technology, Inc. | Low k interconnect dielectric using surface transformation |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US7198974B2 (en) * | 2003-03-05 | 2007-04-03 | Micron Technology, Inc. | Micro-mechanically strained semiconductor film |
US7041575B2 (en) * | 2003-04-29 | 2006-05-09 | Micron Technology, Inc. | Localized strained semiconductor on insulator |
US6987037B2 (en) * | 2003-05-07 | 2006-01-17 | Micron Technology, Inc. | Strained Si/SiGe structures by ion implantation |
US7115480B2 (en) * | 2003-05-07 | 2006-10-03 | Micron Technology, Inc. | Micromechanical strained semiconductor by wafer bonding |
US7273788B2 (en) * | 2003-05-21 | 2007-09-25 | Micron Technology, Inc. | Ultra-thin semiconductors bonded on glass substrates |
US7008854B2 (en) * | 2003-05-21 | 2006-03-07 | Micron Technology, Inc. | Silicon oxycarbide substrates for bonded silicon on insulator |
US7662701B2 (en) * | 2003-05-21 | 2010-02-16 | Micron Technology, Inc. | Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers |
US7501329B2 (en) * | 2003-05-21 | 2009-03-10 | Micron Technology, Inc. | Wafer gettering using relaxed silicon germanium epitaxial proximity layers |
US7439158B2 (en) | 2003-07-21 | 2008-10-21 | Micron Technology, Inc. | Strained semiconductor by full wafer bonding |
US6929984B2 (en) * | 2003-07-21 | 2005-08-16 | Micron Technology Inc. | Gettering using voids formed by surface transformation |
US7153753B2 (en) * | 2003-08-05 | 2006-12-26 | Micron Technology, Inc. | Strained Si/SiGe/SOI islands and processes of making same |
US7084014B2 (en) * | 2003-10-07 | 2006-08-01 | Endicott Interconnect Technologies, Inc. | Method of making circuitized substrate |
DE102004021051B3 (de) * | 2004-04-29 | 2005-11-10 | Infineon Technologies Ag | DRAM-Speicherzellenanordnung nebst Betriebsverfahren |
US7518182B2 (en) | 2004-07-20 | 2009-04-14 | Micron Technology, Inc. | DRAM layout with vertical FETs and method of formation |
US7247570B2 (en) * | 2004-08-19 | 2007-07-24 | Micron Technology, Inc. | Silicon pillars for vertical transistors |
US7285812B2 (en) * | 2004-09-02 | 2007-10-23 | Micron Technology, Inc. | Vertical transistors |
US7335583B2 (en) * | 2004-09-30 | 2008-02-26 | Intel Corporation | Isolating semiconductor device structures |
US7199419B2 (en) * | 2004-12-13 | 2007-04-03 | Micron Technology, Inc. | Memory structure for reduced floating body effect |
US7229895B2 (en) * | 2005-01-14 | 2007-06-12 | Micron Technology, Inc | Memory array buried digit line |
CN1851922B (zh) * | 2005-04-22 | 2011-05-11 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
EP1717861B1 (en) * | 2005-04-27 | 2010-08-25 | STMicroelectronics Srl | Vertical MOSFET transistor operating as a selector in nonvolatile memory devices |
US7473952B2 (en) * | 2005-05-02 | 2009-01-06 | Infineon Technologies Ag | Memory cell array and method of manufacturing the same |
US7371627B1 (en) | 2005-05-13 | 2008-05-13 | Micron Technology, Inc. | Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines |
US7120046B1 (en) | 2005-05-13 | 2006-10-10 | Micron Technology, Inc. | Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines |
US7317641B2 (en) * | 2005-06-20 | 2008-01-08 | Sandisk Corporation | Volatile memory cell two-pass writing method |
US7764549B2 (en) * | 2005-06-20 | 2010-07-27 | Sandisk 3D Llc | Floating body memory cell system and method of manufacture |
US7888721B2 (en) * | 2005-07-06 | 2011-02-15 | Micron Technology, Inc. | Surround gate access transistors with grown ultra-thin bodies |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7768051B2 (en) | 2005-07-25 | 2010-08-03 | Micron Technology, Inc. | DRAM including a vertical surround gate transistor |
US7575978B2 (en) | 2005-08-04 | 2009-08-18 | Micron Technology, Inc. | Method for making conductive nanoparticle charge storage element |
US7989290B2 (en) | 2005-08-04 | 2011-08-02 | Micron Technology, Inc. | Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps |
US7439576B2 (en) * | 2005-08-29 | 2008-10-21 | Micron Technology, Inc. | Ultra-thin body vertical tunneling transistor |
US7696567B2 (en) | 2005-08-31 | 2010-04-13 | Micron Technology, Inc | Semiconductor memory device |
US7446372B2 (en) * | 2005-09-01 | 2008-11-04 | Micron Technology, Inc. | DRAM tunneling access transistor |
US7416943B2 (en) | 2005-09-01 | 2008-08-26 | Micron Technology, Inc. | Peripheral gate stacks and recessed array gates |
US7687342B2 (en) * | 2005-09-01 | 2010-03-30 | Micron Technology, Inc. | Method of manufacturing a memory device |
US7557032B2 (en) | 2005-09-01 | 2009-07-07 | Micron Technology, Inc. | Silicided recessed silicon |
US7544584B2 (en) * | 2006-02-16 | 2009-06-09 | Micron Technology, Inc. | Localized compressive strained semiconductor |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7859026B2 (en) * | 2006-03-16 | 2010-12-28 | Spansion Llc | Vertical semiconductor device |
US7491995B2 (en) * | 2006-04-04 | 2009-02-17 | Micron Technology, Inc. | DRAM with nanofin transistors |
US20070228491A1 (en) * | 2006-04-04 | 2007-10-04 | Micron Technology, Inc. | Tunneling transistor with sublithographic channel |
US8734583B2 (en) * | 2006-04-04 | 2014-05-27 | Micron Technology, Inc. | Grown nanofin transistors |
US8354311B2 (en) * | 2006-04-04 | 2013-01-15 | Micron Technology, Inc. | Method for forming nanofin transistors |
US7425491B2 (en) * | 2006-04-04 | 2008-09-16 | Micron Technology, Inc. | Nanowire transistor with surrounding gate |
US7339222B1 (en) * | 2006-05-03 | 2008-03-04 | Spansion Llc | Method for determining wordline critical dimension in a memory array and related structure |
US8567992B2 (en) * | 2006-09-12 | 2013-10-29 | Huizhou Light Engine Ltd. | Integrally formed light emitting diode light wire and uses thereof |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
TWI355046B (en) * | 2007-07-10 | 2011-12-21 | Nanya Technology Corp | Two bit memory structure and method of making the |
US7875529B2 (en) * | 2007-10-05 | 2011-01-25 | Micron Technology, Inc. | Semiconductor devices |
US7719869B2 (en) * | 2007-11-19 | 2010-05-18 | Qimonda Ag | Memory cell array comprising floating body memory cells |
US7927938B2 (en) | 2007-11-19 | 2011-04-19 | Micron Technology, Inc. | Fin-JFET |
TWI368299B (en) * | 2008-08-15 | 2012-07-11 | Nanya Technology Corp | Vertical transistor and array of vertical transistor |
EP2334995A4 (en) * | 2008-10-02 | 2014-04-02 | Carrier Corp | STARTING FOR REFRIGERANT SYSTEM WITH HOT GAS HEATING |
WO2010114890A1 (en) * | 2009-03-31 | 2010-10-07 | Innovative Silicon Isi Sa | Techniques for providing a semiconductor memory device |
TWI415247B (zh) * | 2010-12-15 | 2013-11-11 | Powerchip Technology Corp | 具有垂直通道電晶體的動態隨機存取記憶胞及陣列 |
KR101140057B1 (ko) * | 2010-12-16 | 2012-05-02 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
US8686486B2 (en) * | 2011-03-31 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US9401363B2 (en) | 2011-08-23 | 2016-07-26 | Micron Technology, Inc. | Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices |
US8437184B1 (en) | 2011-12-06 | 2013-05-07 | Rexchip Electronics Corporation | Method of controlling a vertical dual-gate dynamic random access memory |
US8748258B2 (en) | 2011-12-12 | 2014-06-10 | International Business Machines Corporation | Method and structure for forming on-chip high quality capacitors with ETSOI transistors |
US8709890B2 (en) | 2011-12-12 | 2014-04-29 | International Business Machines Corporation | Method and structure for forming ETSOI capacitors, diodes, resistors and back gate contacts |
CN102522407B (zh) * | 2011-12-23 | 2014-04-09 | 清华大学 | 具有垂直晶体管的存储器阵列结构及其形成方法 |
US8680600B2 (en) | 2011-12-27 | 2014-03-25 | Rexchip Electronics Corporation | Vertical transistor structure and method of manufacturing same |
CN102769016B (zh) * | 2012-08-14 | 2015-01-14 | 北京大学 | 一种抗辐射的cmos器件及其制备方法 |
US9760116B2 (en) | 2012-12-05 | 2017-09-12 | Mobile Tech, Inc. | Docking station for tablet device |
US11120884B2 (en) | 2015-09-30 | 2021-09-14 | Sunrise Memory Corporation | Implementing logic function and generating analog signals using NOR memory strings |
US10728868B2 (en) | 2015-12-03 | 2020-07-28 | Mobile Tech, Inc. | Remote monitoring and control over wireless nodes in a wirelessly connected environment |
US10517056B2 (en) | 2015-12-03 | 2019-12-24 | Mobile Tech, Inc. | Electronically connected environment |
US11109335B2 (en) | 2015-12-03 | 2021-08-31 | Mobile Tech, Inc. | Wirelessly connected hybrid environment of different types of wireless nodes |
US10251144B2 (en) | 2015-12-03 | 2019-04-02 | Mobile Tech, Inc. | Location tracking of products and product display assemblies in a wirelessly connected environment |
US10101770B2 (en) | 2016-07-29 | 2018-10-16 | Mobile Tech, Inc. | Docking system for portable computing device in an enclosure |
US10608008B2 (en) | 2017-06-20 | 2020-03-31 | Sunrise Memory Corporation | 3-dimensional nor strings with segmented shared source regions |
US10461196B2 (en) | 2017-07-28 | 2019-10-29 | Globalfoundries Inc. | Control of length in gate region during processing of VFET structures |
US10559582B2 (en) | 2018-06-04 | 2020-02-11 | Sandisk Technologies Llc | Three-dimensional memory device containing source contact to bottom of vertical channels and method of making the same |
US10615225B2 (en) * | 2018-08-22 | 2020-04-07 | International Business Machines Corporation | Multilayer back end of line (BEOL)-stackable cross-point memory array with complementary pass transistor selectors |
US20220070620A1 (en) | 2018-10-25 | 2022-03-03 | Mobile Tech, Inc | Proxy nodes for expanding the functionality of nodes in a wirelessly connected environment |
US10593443B1 (en) | 2019-01-24 | 2020-03-17 | Mobile Tech, Inc. | Motion sensing cable for intelligent charging of devices |
US10879313B2 (en) | 2019-05-13 | 2020-12-29 | Sandisk Technologies Llc | Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same |
US10991761B2 (en) | 2019-05-13 | 2021-04-27 | Sandisk Technologies Llc | Three-dimensional cross-point memory device containing inter-level connection structures and method of making the same |
US11222854B2 (en) * | 2019-05-15 | 2022-01-11 | Micron Technology, Inc. | Multitier arrangements of integrated devices, and methods of protecting memory cells during polishing |
US11889680B2 (en) * | 2020-08-28 | 2024-01-30 | Micron Technology, Inc. | Integrated assemblies and methods of forming integrated assemblies |
Family Cites Families (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US107402A (en) * | 1870-09-13 | Improvement in corn-planters | ||
US4051354A (en) * | 1975-07-03 | 1977-09-27 | Texas Instruments Incorporated | Fault-tolerant cell addressable array |
US4604162A (en) * | 1983-06-13 | 1986-08-05 | Ncr Corporation | Formation and planarization of silicon-on-insulator structures |
US5135879A (en) * | 1985-03-26 | 1992-08-04 | Texas Instruments Incorporated | Method of fabricating a high density EPROM cell on a trench wall |
US4864375A (en) * | 1986-02-05 | 1989-09-05 | Texas Instruments Incorporated | Dram cell and method |
JPS6366963A (ja) | 1986-09-08 | 1988-03-25 | Nippon Telegr & Teleph Corp <Ntt> | 溝埋込型半導体装置およびその製造方法 |
JPS63239973A (ja) * | 1986-10-08 | 1988-10-05 | テキサス インスツルメンツ インコーポレイテツド | 集積回路およびその製造方法 |
US5017504A (en) * | 1986-12-01 | 1991-05-21 | Mitsubishi Denki Kabushiki Kaisha | Vertical type MOS transistor and method of formation thereof |
JPS63198323A (ja) * | 1987-02-13 | 1988-08-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
EP0333426B1 (en) * | 1988-03-15 | 1996-07-10 | Kabushiki Kaisha Toshiba | Dynamic RAM |
US5272367A (en) | 1988-05-02 | 1993-12-21 | Micron Technology, Inc. | Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams) |
JPH07105477B2 (ja) * | 1988-05-28 | 1995-11-13 | 富士通株式会社 | 半導体装置及びその製造方法 |
US4926224A (en) * | 1988-06-03 | 1990-05-15 | Texas Instruments Incorporated | Crosspoint dynamic ram cell for folded bitline array |
US4896293A (en) * | 1988-06-09 | 1990-01-23 | Texas Instruments Incorporated | Dynamic ram cell with isolated trench capacitors |
US4958318A (en) * | 1988-07-08 | 1990-09-18 | Eliyahou Harari | Sidewall capacitor DRAM cell |
US4920065A (en) * | 1988-10-31 | 1990-04-24 | International Business Machines Corporation | Method of making ultra dense dram cells |
US4954854A (en) * | 1989-05-22 | 1990-09-04 | International Business Machines Corporation | Cross-point lightly-doped drain-source trench transistor and fabrication process therefor |
US5021355A (en) * | 1989-05-22 | 1991-06-04 | International Business Machines Corporation | Method of fabricating cross-point lightly-doped drain-source trench transistor |
US5028977A (en) * | 1989-06-16 | 1991-07-02 | Massachusetts Institute Of Technology | Merged bipolar and insulated gate transistors |
US5192704A (en) | 1989-06-30 | 1993-03-09 | Texas Instruments Incorporated | Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell |
US5316962A (en) * | 1989-08-15 | 1994-05-31 | Matsushita Electric Industrial Co., Ltd. | Method of producing a semiconductor device having trench capacitors and vertical switching transistors |
US5006909A (en) * | 1989-10-30 | 1991-04-09 | Motorola, Inc. | Dram with a vertical capacitor and transistor |
US5241211A (en) * | 1989-12-20 | 1993-08-31 | Nec Corporation | Semiconductor device |
US5010386A (en) * | 1989-12-26 | 1991-04-23 | Texas Instruments Incorporated | Insulator separated vertical CMOS |
JPH04212450A (ja) * | 1990-04-11 | 1992-08-04 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
JPH0414868A (ja) * | 1990-05-09 | 1992-01-20 | Hitachi Ltd | 半導体記憶装置とその製造方法 |
US4987089A (en) * | 1990-07-23 | 1991-01-22 | Micron Technology, Inc. | BiCMOS process and process for forming bipolar transistors on wafers also containing FETs |
US5037773A (en) * | 1990-11-08 | 1991-08-06 | Micron Technology, Inc. | Stacked capacitor doping technique making use of rugged polysilicon |
US5053351A (en) * | 1991-03-19 | 1991-10-01 | Micron Technology, Inc. | Method of making stacked E-cell capacitor DRAM cell |
US5229647A (en) * | 1991-03-27 | 1993-07-20 | Micron Technology, Inc. | High density data storage using stacked wafers |
US5122848A (en) * | 1991-04-08 | 1992-06-16 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
US5223081A (en) * | 1991-07-03 | 1993-06-29 | Doan Trung T | Method for roughening a silicon or polysilicon surface for a semiconductor substrate |
US5110752A (en) * | 1991-07-10 | 1992-05-05 | Industrial Technology Research Institute | Roughened polysilicon surface capacitor electrode plate for high denity dram |
US5202278A (en) * | 1991-09-10 | 1993-04-13 | Micron Technology, Inc. | Method of forming a capacitor in semiconductor wafer processing |
US5196704A (en) * | 1991-09-27 | 1993-03-23 | Battelle Memorial Institute | Environmental radiation detection via thermoluminescence |
US5156987A (en) * | 1991-12-18 | 1992-10-20 | Micron Technology, Inc. | High performance thin film transistor (TFT) by solid phase epitaxial regrowth |
US5365477A (en) * | 1992-06-16 | 1994-11-15 | The United States Of America As Represented By The Secretary Of The Navy | Dynamic random access memory device |
US5254499A (en) * | 1992-07-14 | 1993-10-19 | Micron Technology, Inc. | Method of depositing high density titanium nitride films on semiconductor wafers |
US5320880A (en) * | 1992-10-20 | 1994-06-14 | Micron Technology, Inc. | Method of providing a silicon film having a roughened outer surface |
US5379255A (en) * | 1992-12-14 | 1995-01-03 | Texas Instruments Incorporated | Three dimensional famos memory devices and methods of fabricating |
US5266514A (en) | 1992-12-21 | 1993-11-30 | Industrial Technology Research Institute | Method for producing a roughened surface capacitor |
US5616934A (en) * | 1993-05-12 | 1997-04-01 | Micron Technology, Inc. | Fully planarized thin film transistor (TFT) and process to fabricate same |
JPH07130871A (ja) * | 1993-06-28 | 1995-05-19 | Toshiba Corp | 半導体記憶装置 |
US5392245A (en) * | 1993-08-13 | 1995-02-21 | Micron Technology, Inc. | Redundancy elements using thin film transistors (TFTs) |
JP2605594B2 (ja) * | 1993-09-03 | 1997-04-30 | 日本電気株式会社 | 半導体装置の製造方法 |
US5382540A (en) * | 1993-09-20 | 1995-01-17 | Motorola, Inc. | Process for forming an electrically programmable read-only memory cell |
US5449433A (en) * | 1994-02-14 | 1995-09-12 | Micron Semiconductor, Inc. | Use of a high density plasma source having an electrostatic shield for anisotropic polysilicon etching over topography |
JP3428124B2 (ja) * | 1994-03-15 | 2003-07-22 | 三菱電機株式会社 | Mis型トランジスタおよびその製造方法 |
KR960016773B1 (en) | 1994-03-28 | 1996-12-20 | Samsung Electronics Co Ltd | Buried bit line and cylindrical gate cell and forming method thereof |
US5414287A (en) * | 1994-04-25 | 1995-05-09 | United Microelectronics Corporation | Process for high density split-gate memory cell for flash or EPROM |
US5460988A (en) * | 1994-04-25 | 1995-10-24 | United Microelectronics Corporation | Process for high density flash EPROM cell |
US5495441A (en) * | 1994-05-18 | 1996-02-27 | United Microelectronics Corporation | Split-gate flash memory cell |
JP3745392B2 (ja) * | 1994-05-26 | 2006-02-15 | 株式会社ルネサステクノロジ | 半導体装置 |
US5432739A (en) * | 1994-06-17 | 1995-07-11 | Philips Electronics North America Corporation | Non-volatile sidewall memory cell method of fabricating same |
KR100193102B1 (ko) | 1994-08-25 | 1999-06-15 | 무명씨 | 반도체 장치 및 그 제조방법 |
US5705415A (en) * | 1994-10-04 | 1998-01-06 | Motorola, Inc. | Process for forming an electrically programmable read-only memory cell |
JP2658910B2 (ja) * | 1994-10-28 | 1997-09-30 | 日本電気株式会社 | フラッシュメモリ装置およびその製造方法 |
US5508542A (en) * | 1994-10-28 | 1996-04-16 | International Business Machines Corporation | Porous silicon trench and capacitor structures |
US5444013A (en) * | 1994-11-02 | 1995-08-22 | Micron Technology, Inc. | Method of forming a capacitor |
US6252267B1 (en) * | 1994-12-28 | 2001-06-26 | International Business Machines Corporation | Five square folded-bitline DRAM cell |
JP3549602B2 (ja) * | 1995-01-12 | 2004-08-04 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US5523261A (en) * | 1995-02-28 | 1996-06-04 | Micron Technology, Inc. | Method of cleaning high density inductively coupled plasma chamber using capacitive coupling |
JP2692639B2 (ja) * | 1995-03-10 | 1997-12-17 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
KR0165398B1 (ko) * | 1995-05-26 | 1998-12-15 | 윤종용 | 버티칼 트랜지스터의 제조방법 |
US5636170A (en) * | 1995-11-13 | 1997-06-03 | Micron Technology, Inc. | Low voltage dynamic memory |
US5640342A (en) * | 1995-11-20 | 1997-06-17 | Micron Technology, Inc. | Structure for cross coupled thin film transistors and static random access memory cell |
TW326553B (en) * | 1996-01-22 | 1998-02-11 | Handotai Energy Kenkyusho Kk | Semiconductor device and method of fabricating same |
TW312852B (en) * | 1996-06-08 | 1997-08-11 | United Microelectronics Corp | Manufacturing method of flash memory |
US5691230A (en) | 1996-09-04 | 1997-11-25 | Micron Technology, Inc. | Technique for producing small islands of silicon on insulator |
US5885864A (en) * | 1996-10-24 | 1999-03-23 | Micron Technology, Inc. | Method for forming compact memory cell using vertical devices |
US6034389A (en) * | 1997-01-22 | 2000-03-07 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array |
US5990509A (en) * | 1997-01-22 | 1999-11-23 | International Business Machines Corporation | 2F-square memory cell for gigabit memory applications |
US5874760A (en) * | 1997-01-22 | 1999-02-23 | International Business Machines Corporation | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation |
US5929477A (en) * | 1997-01-22 | 1999-07-27 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array |
US5936274A (en) * | 1997-07-08 | 1999-08-10 | Micron Technology, Inc. | High density flash memory |
US5973356A (en) * | 1997-07-08 | 1999-10-26 | Micron Technology, Inc. | Ultra high density flash memory |
US6150687A (en) | 1997-07-08 | 2000-11-21 | Micron Technology, Inc. | Memory cell having a vertical transistor with buried source/drain and dual gates |
US6072209A (en) | 1997-07-08 | 2000-06-06 | Micro Technology, Inc. | Four F2 folded bit line DRAM cell structure having buried bit and word lines |
US5909618A (en) * | 1997-07-08 | 1999-06-01 | Micron Technology, Inc. | Method of making memory cell with vertical transistor and buried word and body lines |
US5973352A (en) * | 1997-08-20 | 1999-10-26 | Micron Technology, Inc. | Ultra high density flash memory having vertically stacked devices |
US6066869A (en) * | 1997-10-06 | 2000-05-23 | Micron Technology, Inc. | Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor |
US5907170A (en) * | 1997-10-06 | 1999-05-25 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
US5952039A (en) * | 1997-11-04 | 1999-09-14 | United Microelectronics Corp. | Method for manufacturing DRAM capacitor |
US5991225A (en) * | 1998-02-27 | 1999-11-23 | Micron Technology, Inc. | Programmable memory address decode array with vertical transistors |
US6083793A (en) * | 1998-02-27 | 2000-07-04 | Texas Instruments - Acer Incorporated | Method to manufacture nonvolatile memories with a trench-pillar cell structure for high capacitive coupling ratio |
US6124729A (en) * | 1998-02-27 | 2000-09-26 | Micron Technology, Inc. | Field programmable logic arrays with vertical transistors |
US6225158B1 (en) | 1998-05-28 | 2001-05-01 | International Business Machines Corporation | Trench storage dynamic random access memory cell with vertical transfer device |
US6026019A (en) * | 1998-06-19 | 2000-02-15 | International Business Machines Corporation | Two square NVRAM cell |
US6208164B1 (en) * | 1998-08-04 | 2001-03-27 | Micron Technology, Inc. | Programmable logic array with vertical transistors |
US6134175A (en) * | 1998-08-04 | 2000-10-17 | Micron Technology, Inc. | Memory address decode array with vertical transistors |
KR20000045305A (ko) * | 1998-12-30 | 2000-07-15 | 김영환 | 완전 공핍형 에스·오·아이 소자 및 그 제조방법 |
US6472702B1 (en) * | 2000-02-01 | 2002-10-29 | Winbond Electronics Corporation | Deep trench DRAM with SOI and STI |
US6222788B1 (en) * | 2000-05-30 | 2001-04-24 | Micron Technology, Inc. | Vertical gate transistors in pass transistor logic decode circuits |
US6219299B1 (en) * | 2000-05-31 | 2001-04-17 | Micron Technology, Inc. | Programmable memory decode circuits with transistors with vertical gates |
US6403494B1 (en) * | 2000-08-14 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method of forming a floating gate self-aligned to STI on EEPROM |
US6437389B1 (en) * | 2000-08-22 | 2002-08-20 | Micron Technology, Inc. | Vertical gate transistors in pass transistor programmable logic arrays |
US6380765B1 (en) * | 2000-08-29 | 2002-04-30 | Micron Technology, Inc. | Double pass transistor logic with vertical gate transistors |
US6377070B1 (en) * | 2001-02-09 | 2002-04-23 | Micron Technology, Inc. | In-service programmable logic arrays with ultra thin vertical body transistors |
US6496034B2 (en) | 2001-02-09 | 2002-12-17 | Micron Technology, Inc. | Programmable logic arrays with ultra thin body transistors |
US6448601B1 (en) * | 2001-02-09 | 2002-09-10 | Micron Technology, Inc. | Memory address and decode circuits with ultra thin body transistors |
US6566682B2 (en) * | 2001-02-09 | 2003-05-20 | Micron Technology, Inc. | Programmable memory address and decode circuits with ultra thin vertical body transistors |
US6559491B2 (en) | 2001-02-09 | 2003-05-06 | Micron Technology, Inc. | Folded bit line DRAM with ultra thin body transistors |
US6424001B1 (en) * | 2001-02-09 | 2002-07-23 | Micron Technology, Inc. | Flash memory with ultra thin vertical body transistors |
US6531727B2 (en) * | 2001-02-09 | 2003-03-11 | Micron Technology, Inc. | Open bit line DRAM with ultra thin body transistors |
TW546778B (en) * | 2001-04-20 | 2003-08-11 | Koninkl Philips Electronics Nv | Two-transistor flash cell |
US6800899B2 (en) * | 2001-08-30 | 2004-10-05 | Micron Technology, Inc. | Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor |
US6680508B1 (en) * | 2002-08-28 | 2004-01-20 | Micron Technology, Inc. | Vertical floating gate transistor |
US7224024B2 (en) * | 2002-08-29 | 2007-05-29 | Micron Technology, Inc. | Single transistor vertical memory gain cell |
-
2001
- 2001-02-09 US US09/780,130 patent/US6559491B2/en not_active Expired - Lifetime
-
2002
- 2002-02-04 JP JP2003581264A patent/JP4431401B2/ja not_active Expired - Fee Related
- 2002-02-04 SG SG200505068-7A patent/SG161735A1/en unknown
- 2002-02-04 AU AU2002240244A patent/AU2002240244A1/en not_active Abandoned
- 2002-02-04 WO PCT/US2002/003231 patent/WO2003083947A2/en active IP Right Grant
- 2002-02-04 CN CNB028078500A patent/CN100492644C/zh not_active Expired - Lifetime
- 2002-02-04 EP EP02706137A patent/EP1419532A4/en not_active Withdrawn
- 2002-02-04 KR KR1020037010480A patent/KR100594524B1/ko not_active IP Right Cessation
-
2003
- 2003-05-05 US US10/429,643 patent/US6995057B2/en not_active Expired - Fee Related
-
2005
- 2005-01-18 US US11/037,831 patent/US7015525B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10163910B2 (en) | 2016-09-28 | 2018-12-25 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US6995057B2 (en) | 2006-02-07 |
KR20040004524A (ko) | 2004-01-13 |
SG161735A1 (en) | 2010-06-29 |
CN100492644C (zh) | 2009-05-27 |
WO2003083947A2 (en) | 2003-10-09 |
EP1419532A4 (en) | 2008-10-22 |
US20050190617A1 (en) | 2005-09-01 |
US6559491B2 (en) | 2003-05-06 |
AU2002240244A1 (en) | 2003-10-13 |
US20040007721A1 (en) | 2004-01-15 |
JP2005520347A (ja) | 2005-07-07 |
WO2003083947A3 (en) | 2003-12-04 |
US20020109173A1 (en) | 2002-08-15 |
KR100594524B1 (ko) | 2006-06-30 |
CN1633713A (zh) | 2005-06-29 |
EP1419532A2 (en) | 2004-05-19 |
US7015525B2 (en) | 2006-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4431401B2 (ja) | 極薄垂直ボデイトランジスタを有する折り返しビットラインdram | |
JP4399258B2 (ja) | 超薄垂直ボデイトランジスタを有するオープンビットラインdram | |
US6881627B2 (en) | Flash memory with ultra thin vertical body transistors | |
US6664806B2 (en) | Memory address and decode circuits with ultra thin body transistors | |
US6903367B2 (en) | Programmable memory address and decode circuits with vertical body transistors | |
US8461002B2 (en) | Vertical transistor, memory cell, device, system and method of forming same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050203 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050203 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070615 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070622 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070921 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20071001 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20071018 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20071025 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20071120 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20071128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090226 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090521 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090528 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090625 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090702 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090727 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090803 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090826 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20091203 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20091221 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121225 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4431401 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121225 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131225 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |