JP2007294897A - バルクシリコン上に１ｔ−ｄｒａｍを製造するための方法 - Google Patents

バルクシリコン上に１ｔ−ｄｒａｍを製造するための方法 Download PDF

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Publication number
JP2007294897A
JP2007294897A JP2007067107A JP2007067107A JP2007294897A JP 2007294897 A JP2007294897 A JP 2007294897A JP 2007067107 A JP2007067107 A JP 2007067107A JP 2007067107 A JP2007067107 A JP 2007067107A JP 2007294897 A JP2007294897 A JP 2007294897A
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Japan
Prior art keywords
integrated circuit
bulk
silicon layer
region
dram cell
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JP2007067107A
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English (en)
Japanese (ja)
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JP2007294897A5 (https=
Inventor
Albert Wu
ウー アルバート
Roawen Chen
チェン ローウェン
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Marvell World Trade Ltd
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Marvell World Trade Ltd
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Publication of JP2007294897A publication Critical patent/JP2007294897A/ja
Publication of JP2007294897A5 publication Critical patent/JP2007294897A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2007067107A 2006-03-15 2007-03-15 バルクシリコン上に１ｔ−ｄｒａｍを製造するための方法 Pending JP2007294897A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78247906P 2006-03-15 2006-03-15
US11/674,008 US8008137B2 (en) 2006-03-15 2007-02-12 Method for fabricating 1T-DRAM on bulk silicon

Publications (2)

Publication Number Publication Date
JP2007294897A true JP2007294897A (ja) 2007-11-08
JP2007294897A5 JP2007294897A5 (https=) 2010-04-22

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ID=38077174

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JP2007067107A Pending JP2007294897A (ja) 2006-03-15 2007-03-15 バルクシリコン上に１ｔ−ｄｒａｍを製造するための方法

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Country Link
US (1) US8008137B2 (https=)
EP (1) EP1835535A3 (https=)
JP (1) JP2007294897A (https=)
CN (1) CN101038919B (https=)
TW (1) TWI423422B (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012039101A (ja) * 2010-07-16 2012-02-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012256821A (ja) * 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
JP2012256835A (ja) * 2011-01-26 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US8378403B2 (en) 2010-07-02 2013-02-19 Semiconductor Energy Laboratory Semiconductor device
JP2014041689A (ja) * 2010-04-07 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015029111A (ja) * 2009-12-28 2015-02-12 株式会社半導体エネルギー研究所 半導体装置
JP2016213506A (ja) * 2010-12-28 2016-12-15 株式会社半導体エネルギー研究所 半導体装置
US9990965B2 (en) 2011-12-15 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Storage device
JP2024057064A (ja) * 2010-09-14 2024-04-23 株式会社半導体エネルギー研究所 半導体装置

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KR100714401B1 (ko) * 2006-02-08 2007-05-04 삼성전자주식회사 적층된 트랜지스터를 구비하는 반도체 장치 및 그 형성방법
US8278167B2 (en) 2008-12-18 2012-10-02 Micron Technology, Inc. Method and structure for integrating capacitor-less memory cell with logic
TWI433302B (zh) 2009-03-03 2014-04-01 旺宏電子股份有限公司 積體電路自對準三度空間記憶陣列及其製作方法
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI564890B (zh) 2011-01-26 2017-01-01 半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
US9012993B2 (en) * 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102446958B (zh) * 2011-11-08 2014-11-05 上海华力微电子有限公司 绝缘体上碳硅-锗硅异质结1t-dram结构及形成方法
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9287257B2 (en) * 2014-05-30 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Power gating for three dimensional integrated circuits (3DIC)
US9281305B1 (en) * 2014-12-05 2016-03-08 National Applied Research Laboratories Transistor device structure
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
US10147722B2 (en) * 2016-08-12 2018-12-04 Renesas Electronics America Inc. Isolated circuit formed during back end of line process

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JPH0774358A (ja) * 1993-06-30 1995-03-17 Fujitsu Ltd ペロブスカイト系酸化膜の形成方法およびペロブスカイト系酸化膜を用いた薄膜トランジスタとその製造方法
JPH11233789A (ja) * 1998-02-12 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004039690A (ja) * 2002-06-28 2004-02-05 Seiko Epson Corp 半導体素子
JP2005251791A (ja) * 2004-03-01 2005-09-15 Toshiba Corp 半導体記憶装置

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US5675185A (en) * 1995-09-29 1997-10-07 International Business Machines Corporation Semiconductor structure incorporating thin film transistors with undoped cap oxide layers
US8779597B2 (en) * 2004-06-21 2014-07-15 Sang-Yun Lee Semiconductor device with base support structure
KR100450595B1 (ko) * 2000-02-09 2004-09-30 히다찌 케이블 리미티드 결정실리콘 반도체장치 및 그 장치의 제조방법
US6635552B1 (en) 2000-06-12 2003-10-21 Micron Technology, Inc. Methods of forming semiconductor constructions
JP5792918B2 (ja) * 2000-08-14 2015-10-14 サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニーＳａｎｄｉｓｋ ３Ｄ Ｌｌｃ 高集積メモリデバイス
WO2004015764A2 (en) 2002-08-08 2004-02-19 Leedy Glenn J Vertical system integration
JP2004079696A (ja) * 2002-08-14 2004-03-11 Renesas Technology Corp 半導体記憶装置
US7042756B2 (en) 2002-10-18 2006-05-09 Viciciv Technology Configurable storage device
US7541614B2 (en) 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
JP3898715B2 (ja) 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
KR100655664B1 (ko) * 2005-07-08 2006-12-08 삼성전자주식회사 스택형 반도체 장치 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774358A (ja) * 1993-06-30 1995-03-17 Fujitsu Ltd ペロブスカイト系酸化膜の形成方法およびペロブスカイト系酸化膜を用いた薄膜トランジスタとその製造方法
JPH11233789A (ja) * 1998-02-12 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2004039690A (ja) * 2002-06-28 2004-02-05 Seiko Epson Corp 半導体素子
JP2005251791A (ja) * 2004-03-01 2005-09-15 Toshiba Corp 半導体記憶装置

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9490370B2 (en) 2009-12-28 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015029111A (ja) * 2009-12-28 2015-02-12 株式会社半導体エネルギー研究所 半導体装置
JP2014041689A (ja) * 2010-04-07 2014-03-06 Semiconductor Energy Lab Co Ltd 半導体装置
US9780093B2 (en) 2010-07-02 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12160999B2 (en) 2010-07-02 2024-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8637865B2 (en) 2010-07-02 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8378403B2 (en) 2010-07-02 2013-02-19 Semiconductor Energy Laboratory Semiconductor device
US10319723B2 (en) 2010-07-02 2019-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11233055B2 (en) 2010-07-02 2022-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8847326B2 (en) 2010-07-16 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461586B2 (en) 2010-07-16 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012039101A (ja) * 2010-07-16 2012-02-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015146422A (ja) * 2010-09-13 2015-08-13 株式会社半導体エネルギー研究所 記憶装置の作製方法
JP2012256821A (ja) * 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
JP2016187047A (ja) * 2010-09-13 2016-10-27 株式会社半導体エネルギー研究所 記憶装置
US9263116B2 (en) 2010-09-13 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9042161B2 (en) 2010-09-13 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP2024057064A (ja) * 2010-09-14 2024-04-23 株式会社半導体エネルギー研究所 半導体装置
JP7705972B2 (ja) 2010-09-14 2025-07-10 株式会社半導体エネルギー研究所 半導体装置
US9954004B2 (en) 2010-12-28 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016213506A (ja) * 2010-12-28 2016-12-15 株式会社半導体エネルギー研究所 半導体装置
JP2012256835A (ja) * 2011-01-26 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US9990965B2 (en) 2011-12-15 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Storage device

Also Published As

Publication number Publication date
US8008137B2 (en) 2011-08-30
CN101038919A (zh) 2007-09-19
CN101038919B (zh) 2012-01-04
EP1835535A3 (en) 2010-07-14
TWI423422B (zh) 2014-01-11
EP1835535A2 (en) 2007-09-19
US20070215906A1 (en) 2007-09-20
TW200742039A (en) 2007-11-01

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