JP2007294897A5 - - Google Patents
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- Publication number
- JP2007294897A5 JP2007294897A5 JP2007067107A JP2007067107A JP2007294897A5 JP 2007294897 A5 JP2007294897 A5 JP 2007294897A5 JP 2007067107 A JP2007067107 A JP 2007067107A JP 2007067107 A JP2007067107 A JP 2007067107A JP 2007294897 A5 JP2007294897 A5 JP 2007294897A5
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- region
- dram cell
- silicon layer
- bulk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 229910052710 silicon Inorganic materials 0.000 claims 9
- 239000010703 silicon Substances 0.000 claims 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 7
- 210000000746 body region Anatomy 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 238000009825 accumulation Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 230000000295 complement effect Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78247906P | 2006-03-15 | 2006-03-15 | |
| US11/674,008 US8008137B2 (en) | 2006-03-15 | 2007-02-12 | Method for fabricating 1T-DRAM on bulk silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007294897A JP2007294897A (ja) | 2007-11-08 |
| JP2007294897A5 true JP2007294897A5 (https=) | 2010-04-22 |
Family
ID=38077174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007067107A Pending JP2007294897A (ja) | 2006-03-15 | 2007-03-15 | バルクシリコン上に１ｔ−ｄｒａｍを製造するための方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8008137B2 (https=) |
| EP (1) | EP1835535A3 (https=) |
| JP (1) | JP2007294897A (https=) |
| CN (1) | CN101038919B (https=) |
| TW (1) | TWI423422B (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100714401B1 (ko) * | 2006-02-08 | 2007-05-04 | 삼성전자주식회사 | 적층된 트랜지스터를 구비하는 반도체 장치 및 그 형성방법 |
| US8278167B2 (en) | 2008-12-18 | 2012-10-02 | Micron Technology, Inc. | Method and structure for integrating capacitor-less memory cell with logic |
| TWI433302B (zh) | 2009-03-03 | 2014-04-01 | 旺宏電子股份有限公司 | 積體電路自對準三度空間記憶陣列及其製作方法 |
| WO2011080998A1 (en) | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011114919A1 (en) * | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101884031B1 (ko) * | 2010-04-07 | 2018-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2012008304A1 (en) | 2010-07-16 | 2012-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2012029638A1 (en) | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2012256821A (ja) | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
| TWI539453B (zh) * | 2010-09-14 | 2016-06-21 | 半導體能源研究所股份有限公司 | 記憶體裝置和半導體裝置 |
| US9048142B2 (en) | 2010-12-28 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI564890B (zh) | 2011-01-26 | 2017-01-01 | 半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
| WO2012102182A1 (en) * | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9012993B2 (en) * | 2011-07-22 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN102446958B (zh) * | 2011-11-08 | 2014-11-05 | 上海华力微电子有限公司 | 绝缘体上碳硅-锗硅异质结1t-dram结构及形成方法 |
| US8981367B2 (en) | 2011-12-01 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6081171B2 (ja) | 2011-12-09 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP6105266B2 (ja) | 2011-12-15 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| US9559113B2 (en) | 2014-05-01 | 2017-01-31 | Macronix International Co., Ltd. | SSL/GSL gate oxide in 3D vertical channel NAND |
| US9287257B2 (en) * | 2014-05-30 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power gating for three dimensional integrated circuits (3DIC) |
| US9281305B1 (en) * | 2014-12-05 | 2016-03-08 | National Applied Research Laboratories | Transistor device structure |
| JP6901831B2 (ja) | 2015-05-26 | 2021-07-14 | 株式会社半導体エネルギー研究所 | メモリシステム、及び情報処理システム |
| JP6773453B2 (ja) | 2015-05-26 | 2020-10-21 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
| US10147722B2 (en) * | 2016-08-12 | 2018-12-04 | Renesas Electronics America Inc. | Isolated circuit formed during back end of line process |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774358A (ja) * | 1993-06-30 | 1995-03-17 | Fujitsu Ltd | ペロブスカイト系酸化膜の形成方法およびペロブスカイト系酸化膜を用いた薄膜トランジスタとその製造方法 |
| US5675185A (en) * | 1995-09-29 | 1997-10-07 | International Business Machines Corporation | Semiconductor structure incorporating thin film transistors with undoped cap oxide layers |
| US8779597B2 (en) * | 2004-06-21 | 2014-07-15 | Sang-Yun Lee | Semiconductor device with base support structure |
| JPH11233789A (ja) * | 1998-02-12 | 1999-08-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR100450595B1 (ko) * | 2000-02-09 | 2004-09-30 | 히다찌 케이블 리미티드 | 결정실리콘 반도체장치 및 그 장치의 제조방법 |
| US6635552B1 (en) | 2000-06-12 | 2003-10-21 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
| JP5792918B2 (ja) * | 2000-08-14 | 2015-10-14 | サンディスク・スリー・ディ・リミテッド・ライアビリティ・カンパニーＳａｎｄｉｓｋ ３Ｄ Ｌｌｃ | 高集積メモリデバイス |
| JP2004039690A (ja) * | 2002-06-28 | 2004-02-05 | Seiko Epson Corp | 半導体素子 |
| WO2004015764A2 (en) | 2002-08-08 | 2004-02-19 | Leedy Glenn J | Vertical system integration |
| JP2004079696A (ja) * | 2002-08-14 | 2004-03-11 | Renesas Technology Corp | 半導体記憶装置 |
| US7042756B2 (en) | 2002-10-18 | 2006-05-09 | Viciciv Technology | Configurable storage device |
| US7541614B2 (en) | 2003-03-11 | 2009-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same |
| JP4028499B2 (ja) * | 2004-03-01 | 2007-12-26 | 株式会社東芝 | 半導体記憶装置 |
| JP3898715B2 (ja) | 2004-09-09 | 2007-03-28 | 株式会社東芝 | 半導体装置およびその製造方法 |
| KR100655664B1 (ko) * | 2005-07-08 | 2006-12-08 | 삼성전자주식회사 | 스택형 반도체 장치 및 그 제조 방법 |
-
2007
- 2007-02-12 US US11/674,008 patent/US8008137B2/en active Active
- 2007-03-14 TW TW096108777A patent/TWI423422B/zh not_active IP Right Cessation
- 2007-03-15 JP JP2007067107A patent/JP2007294897A/ja active Pending
- 2007-03-15 CN CN2007101006185A patent/CN101038919B/zh not_active Expired - Fee Related
- 2007-03-15 EP EP07005406A patent/EP1835535A3/en not_active Withdrawn
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