TWI401802B - 薄膜電晶體板及其製造方法 - Google Patents

薄膜電晶體板及其製造方法 Download PDF

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Publication number
TWI401802B
TWI401802B TW095119884A TW95119884A TWI401802B TW I401802 B TWI401802 B TW I401802B TW 095119884 A TW095119884 A TW 095119884A TW 95119884 A TW95119884 A TW 95119884A TW I401802 B TWI401802 B TW I401802B
Authority
TW
Taiwan
Prior art keywords
insulating layer
gate insulating
layer
region
gate
Prior art date
Application number
TW095119884A
Other languages
English (en)
Chinese (zh)
Other versions
TW200703665A (en
Inventor
柳春基
朴慶珉
朴京淳
Original Assignee
三星電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050058437A external-priority patent/KR101188868B1/ko
Priority claimed from KR1020050058444A external-priority patent/KR101172015B1/ko
Application filed by 三星電子股份有限公司 filed Critical 三星電子股份有限公司
Publication of TW200703665A publication Critical patent/TW200703665A/zh
Application granted granted Critical
Publication of TWI401802B publication Critical patent/TWI401802B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
TW095119884A 2005-06-30 2006-06-05 薄膜電晶體板及其製造方法 TWI401802B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050058437A KR101188868B1 (ko) 2005-06-30 2005-06-30 박막 트랜지스터 기판 및 그 제조 방법
KR1020050058444A KR101172015B1 (ko) 2005-06-30 2005-06-30 박막 트랜지스터 기판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
TW200703665A TW200703665A (en) 2007-01-16
TWI401802B true TWI401802B (zh) 2013-07-11

Family

ID=37617497

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119884A TWI401802B (zh) 2005-06-30 2006-06-05 薄膜電晶體板及其製造方法

Country Status (3)

Country Link
US (1) US7800177B2 (enExample)
JP (1) JP5144903B2 (enExample)
TW (1) TWI401802B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101239889B1 (ko) * 2005-08-13 2013-03-06 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101131135B1 (ko) * 2005-11-14 2012-04-03 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
CN101601138B (zh) 2007-01-22 2012-07-25 松下电器产业株式会社 半导体装置及其制造方法
KR101041141B1 (ko) 2009-03-03 2011-06-13 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR101049801B1 (ko) 2009-03-05 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치
KR101056428B1 (ko) * 2009-03-27 2011-08-11 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치
KR101256708B1 (ko) * 2009-06-29 2013-04-19 엘지디스플레이 주식회사 액정표시장치의 제조방법
KR101094295B1 (ko) 2009-11-13 2011-12-19 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법
KR101084271B1 (ko) * 2010-02-09 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 장치 및 그 제조 방법
TWI570809B (zh) * 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN104241390B (zh) * 2013-06-21 2017-02-08 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法
CN104241389B (zh) 2013-06-21 2017-09-01 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法
CN105679769A (zh) * 2016-01-27 2016-06-15 深圳市华星光电技术有限公司 一种tft基板、显示装置以及制造方法
KR102586938B1 (ko) * 2016-09-05 2023-10-10 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN106952928B (zh) * 2017-03-30 2018-10-23 深圳市华星光电技术有限公司 一种tft背板的制作方法及tft背板
CN107039351B (zh) * 2017-04-05 2019-10-11 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
CN109888021A (zh) * 2019-02-27 2019-06-14 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置
US11257916B2 (en) * 2019-03-14 2022-02-22 Semiconductor Components Industries, Llc Electronic device having multi-thickness gate insulator
KR102749086B1 (ko) * 2019-03-14 2025-01-03 삼성디스플레이 주식회사 표시 장치
CN110571226B (zh) 2019-09-05 2021-03-16 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法
CN110600517B (zh) 2019-09-16 2021-06-01 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法

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US6033975A (en) * 1997-01-02 2000-03-07 Texas Instruments Incorporated Implant screen and method
US20050101062A1 (en) * 2003-11-12 2005-05-12 Chun-Gi You Thin film transistor array panel and manufacturing method thereof

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JPH04196328A (ja) * 1990-11-28 1992-07-16 Casio Comput Co Ltd 電界効果型トランジスタ
US5821622A (en) * 1993-03-12 1998-10-13 Kabushiki Kaisha Toshiba Liquid crystal display device
JPH07211912A (ja) * 1994-01-21 1995-08-11 Fuji Xerox Co Ltd 薄膜トランジスタ及びその製造方法
JP3253808B2 (ja) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法
US6037263A (en) * 1998-11-05 2000-03-14 Vanguard International Semiconductor Corporation Plasma enhanced CVD deposition of tungsten and tungsten compounds
US6630977B1 (en) * 1999-05-20 2003-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor formed around contact hole
JP4439766B2 (ja) * 2001-08-02 2010-03-24 シャープ株式会社 薄膜トランジスタ装置及びその製造方法
KR100438772B1 (ko) * 2001-08-07 2004-07-05 삼성전자주식회사 버블 디펙트를 방지할 수 있는 반도체 소자의 제조방법
JP2003188183A (ja) * 2001-12-20 2003-07-04 Fujitsu Display Technologies Corp 薄膜トランジスタ装置、その製造方法及び液晶表示装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033975A (en) * 1997-01-02 2000-03-07 Texas Instruments Incorporated Implant screen and method
US20050101062A1 (en) * 2003-11-12 2005-05-12 Chun-Gi You Thin film transistor array panel and manufacturing method thereof

Also Published As

Publication number Publication date
JP2007013145A (ja) 2007-01-18
JP5144903B2 (ja) 2013-02-13
TW200703665A (en) 2007-01-16
US7800177B2 (en) 2010-09-21
US20070007524A1 (en) 2007-01-11

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