TWI390056B - 接合線 - Google Patents

接合線 Download PDF

Info

Publication number
TWI390056B
TWI390056B TW97141529A TW97141529A TWI390056B TW I390056 B TWI390056 B TW I390056B TW 97141529 A TW97141529 A TW 97141529A TW 97141529 A TW97141529 A TW 97141529A TW I390056 B TWI390056 B TW I390056B
Authority
TW
Taiwan
Prior art keywords
ppm
mass
bonding
bonding wire
gold
Prior art date
Application number
TW97141529A
Other languages
English (en)
Other versions
TW200923107A (en
Inventor
Hiroshi Murai
Jun Chiba
Fujio Amada
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of TW200923107A publication Critical patent/TW200923107A/zh
Application granted granted Critical
Publication of TWI390056B publication Critical patent/TWI390056B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H01L2224/78303—Shape of the pressing surface, e.g. tip or head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H01L2224/78305—Shape of other portions
    • H01L2224/78306—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0107—Ytterbium [Yb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01105—Rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

接合線
本發明係有關連接半導體裝置與外部引線之接合線。
於連接IC晶片之電極與外部配線時，採用介經接合線配線的接合線接合的方法係為人所知的。其中作為接合IC晶片之Al電極及接合線的方式，以超音波並用熱壓接及超音波接合佔有主流。因此，超音波並用熱壓接通常係利用銲球接合方法予以進行著。採用後述的專利文獻(日本專利第3657087號公報)所示的圖面說明利用銲球接合方法的接合法。
如第一圖(a)所示般，接合線2細通過毛細管壓接工具1(capillary；以下稱「毛細管」)的接合線插通孔而由毛細管尖端部的細孔被送出，使電氣火炬3與該尖端對向，藉由使於與接合線2之間放電，加熱、熔融接合線2之尖端，形成銲球4。接著，如第一圖(b)所示般，使毛細管1下降並予壓接(第一次接合)該銲球4至IC晶片6上的Al電極5之上。此時雖未予圖示，但超音波振動通過毛細管1予以附加的同時，IC晶片6由於受加熱塊加熱，故上述銲球4經予熱壓接而形成壓接銲球4’。其後，如第一圖(c)所示般，毛細管1係描繪指定的軌跡，移動於引導框架(lead frame)之外部配線8的上面並下降。此時雖未予圖示，但超音波振動通過毛細管1予以附加，外部配線8由於受加熱塊加熱，故接合線2側面係經予熱壓接而接合(第二次接合)。接合 後，如第一圖(d)所示般，藉由挾持器7在保持挾持著接合線2的狀態下上升，接合線2在由毛細管尖端部的細孔僅被少許送出的狀態(被稱作曳尾)予以切斷結束配線。邊重複此操作，邊進行接合。
接合線接合裝置用之圓筒形毛細管1，係由氧化鋁、氧化鋯或紅寶石或藍寶石等高熔點材料所形成，再以鑽石被覆等被覆於此等高熔點材料之毛細管尖端部作為高使用壽命者，但以氧化鋁為代表性者。毛細管1，係具有供插入接合用之金屬接合線於內部而用的接合線導出孔102。例如，於採用25 μm ψ程度之金屬接合線的情形，接合線導出孔102之大小係33 μm ψ~40 μm ψ程度。毛細管1之瓶頸部的外側，係考慮接合的間隔及接合後的金屬接合線之形狀及大小，予以設成10°程度之角度。因此，孔徑H為38 μm，晶片徑T為152 μm，及去角取面(chamfer)徑CD為64 μm。
至目前為止有各式各樣的接合線已予開發著。例如，為使由已微量添加稀土類元素而成之金(Au)合金提高抗拉強度，即為眾所週知的。此外，至於為使銲球形狀、抗拉強度及剪切強度提高的接合線，以由含有鍶(Sr)1~10重量ppm、鈹(Be)1~20重量ppm、銦(In)1~50重量ppm、之範圍以內，餘量為金及不可避免的雜質而成者為特徵之接合用金合金細線亦如後述的專利文獻2(日本專利第3059314號公報)，即為眾所週知的。此外，為使常期間接合時的接合穩定性提高的Au－1質量%合金之接合線材料 亦係眾所週知的。此等接合線材料係被視作於純金中完全予以合金化的，微量添加元素會昇華而有惡劣，影響一事，係至目前為止尚未被檢討的。
然而，於接合線壓接作業方面，毛細管1之尖端部通常係予加熱至200℃，此外利用電弧放電製作初期銲球時，毛細管1之尖端部表面溫度，有瞬間加熱至1000℃以上之溫度的情形。因此，若用機械人以1秒鐘十數次至數十萬次的高速進行接合時，則不論毛細管1之尖端部的材質如何，首先由接合線金屬所轉印的污染物質會污染毛細管1之尖端部100。其後，此污染物質會逐漸不均勻的蓄積於毛細管1之尖端部100上。由於此一已蓄積的污染物質而使毛細管1受第二次接合之超音波或力量的傳播阻礙，而導致未能施加接合所需的能量之事態。於已使用習用的接合線材料之毛細管，由於經予蓄積於尖端部100的微量添加元素等的污染物質，會使引線架之外部配線8上的第二次接合後之接合線較不能切斷，或以數十萬次有一次之比例，使經予蓄積的污染物質自毛細管1之尖端部100剝落。由於此一第二次接合不良而使接合裝置經常發生停機，生成停止接合作業的事態。此外，雖然不至於停止銲球接合裝置，但是卻使第二次接合方面之接合強度大幅下降。
專利文獻1：日本專利第3657087號公報 專利文獻2：日本專利第3059314號公報
有鑑於上述問題點，本發明之目的係提供與習用者相同的拉力強度(pull strength)及真圓度優越的接合線，而且即使於每秒鐘以十數次至數十萬次的高速連續進行接合時，污染物質亦不致蓄積於毛細管之尖端部的第二次接合強度不會降低的接合線。
本發明人等，對接合線之強度優越的金合金線，經精心研究的結果，於純度99.995質量%以上之金(Au)或純度99.995質量%以上之金(Au)＝鈀(Pd)合金內若微量的添加元素之鎂(Mg)、銦(In)、鋁(Al)及鐿(Yb)為指定量之範圍內時，發現此等微量的添加元素雖然會污染毛細管之尖端部，但是卻發揮該污染物質不致蓄積於毛細管之尖端部的效果，以至完成本發明。
具體而言，若依本發明時，則可予提供以由鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金為特徵的接合線。
若依本發明時，則可予提供以由鈣(Ca)5~20質量ppm、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金為特徵的接合線。
若依本發明時，則可予提供以由鑭(La)5~20質量ppm、鎦(Lu)5~20質量ppm、錫(Sn)5~100質量ppm及鍶(Sr)5~100 質量ppm之中至少一種以上、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金為特徵的接合線。
此外，若依本發明時，則可予提供以由鑭(La)5~20質量ppm、鎦(Lu)5~20質量ppm、錫(Sn)5~100質量ppm及鍶(Sr)5~100質量ppm之中至少一種以上、鈣(Ca)5~20質量ppm、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金為特徵的接合線。
另一方面，若依本發明時，則可予提供以由鈀(Pd)0.01~1.2質量ppm、鈣(Ca)5~20質量ppm、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金為特徵的接合線。
此外，若依本發明時，則可予提供以由鑭(La)5~20質量ppm、鎦(Lu)5~20質量ppm、錫(Sn)5~100質量ppm及鍶(Sr)5~100質量ppm之中至少一種以上、鈀(Pd)0.01~1.2質量%、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金為特徵的接合線。
此外，若依本發明時，則可予提供以由鑭(La)5~20質量ppm、鎦(Lu)5~20質量ppm、錫(Sn)5~100質量ppm及鍶(Sr)5~100質量ppm之中至少一種以上、鈀(Pd)0.01~1.2質量%、鈣(Ca)5~20質量ppm、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金為特徵的接合線。
本發明之金合金接合線，係於藉由微小放電而形成銲球時或第一次接合時形成．昇華，附著於毛細管尖端部之微量添加元素氧化物等的污染物質會隨著於第二次接合時之超音波或熱壓接操作而被容易的轉印至接合對象之接合線等上，而不蓄積，所以伴隨著此等的污染物質而引起的接合不良或剝離之障礙可予消除。
於本發明，微量的添加元素之種類少，成份範圍狹窄，受限制的。接合線之第二次接合性，雖係以完全不含雜質的純金為最優越，但本發明之微量的添加元素，係完全不如此阻礙此純金所具之優越的第二次接合性之元素。若本發明之微量的添加元素之配合比失去配衡時，則會大大的影響於第二次接合之經予壓接的接合部形狀。
而且，本發明若為金(Au)合金系時，則金(Au)以外的之微量的添加元素及雜質元素之合計如未滿100質量ppm時，因可 表示作99.99質量%以上之高純度金接合線，故商業上係較有利的。
[Pd]
於本發明之合金系方面，鈀(Pd)係有助於第一次接合部之長期接合可靠性的元素。若愈添加Pd，雖愈增加長期接合可靠性，但若超過1.2%時，則初期銲球變硬，會發生晶片龜裂等現象，而使接合變成困難。
[Mg]
於本發明之合金系，鎂(Mg)係第二次接合性良好之必需的元素，加上對熔融銲球之壓接直徑的真圓度有效的元素。另一方面，對接合線之拉伸強度而言，鎂(Mg)係如同鈣(Ca)般，並不帶有效果。於本發明之合金系，鎂(Mg)係需要5質量ppm以上。若未滿此值時，則第二次接合性並無效果。於本發明之合金系，為使接合線之第二次接合性良好，以鎂(Mg)在30質量ppm以上為宜。另一方面，於本發明之合金系，鎂(Mg)即使超過100質量ppm而變成過多，於初期形成銲球時所生成的氧化物亦會澱積於毛細管上，而對第二次接合性有惡劣影響。於本發明之合金系，為使第二次接合性穩定，鎂(Mg)以於70質量ppm以下為宜。
[In]
於本發明之合金系，銦(In)係第二次接合性良好之必需的添加元素，加上對熔融銲球之壓接直徑的真圓度有效的元素。 另一方面，對接合線之拉伸強度而言，銦(In)係如同鈣(Ca)般，並不帶有效果。於本發明之合金系方面，銦(In)需為質量5ppm以上。未滿此值時，則第二次接合性並無效果。另一方面，於本發明之合金系，銦(In)若超過20質量ppm時，則氧化物會澱積於毛細管上，而對第二次接合性有惡劣影響。
[Al]
於本發明之合金系，鋁(Al)係第二次接合性良好之必需的元素。另一方面，對接合線之拉伸強度而言，鋁(Al)係如同鈣(Ca)般，並不帶有效果。於本發明之合金系方面，鋁(Al)需為質量5ppm以上。未滿此值時，則第二次接合性並無效果。另一方面，於本發明之合金系，鋁(Al)若超過20質量ppm時，則氧化物會澱積於毛細管上，而對第二次接合性有惡劣影響。
[Yb]
於本發明之合金系，鐿(Yb)係第二次接合性良好之必需的添加元素，加上對熔融銲球之壓接直徑的真圓度有效的元素。另一方面，對接合線之拉伸強度而言，鐿(Yb)係如同鈣(Ca)般，並不帶有效果。於本發明之合金系，鐿(Yb)需為質量5ppm以上。未滿此值時，則第二次接合性並無效果。另一方面，於本發明之合金系，鐿(Yb)若超過20質量ppm時，則氧化物會澱積於毛細管上，而對第二次接合性有惡劣影響。
[Ca]
於本發明之合金系，鈣(Ca)係對接合線之拉伸強度最具效果的元素。然而，鈣(Ca)因氧化物較易殿積於毛細管之尖端部的去角取面面上，故於本發明之合金系，係任意的添加元素，其添加量則受限定的。於本發明之合金系，鈣(Ca)未滿5質量ppm時，則接合線之拉伸強度並無效果。若超過20質量ppm時，則氧化物會澱積於毛細管之去角取面面上，而對第二次接合性有惡劣影響，故鈣(Ca)之添加量係在5~20質量ppm的範圍內。
[La]
於本發明之合金系，鑭(La)係對接合線之拉伸強度有效的元素。加上對第二次接合性有效的元素。又，對熔融銲球之壓接直徑的真圓度有效的元素。然而，鑭(La)因氧化物較易殿積於毛細管之尖端面上，故於本發明之合金系，係任意的添加元素，其添加量則受限定的。於本發明之合金系，鑭(La)未滿質量5ppm時，則接合線之拉伸強度並無效果。若超過20質量ppm時，則氧化物會澱積於毛細管之尖端面上，而對第二次接合性有惡劣影響，故鑭(La)之添加量係在5~20質量ppm的範圍內。
[Lu]
於本發明之合金系，鎦(Lu)係對接合線之拉伸強度有效的元素。加上對第二次接合性有效的元素。然而，鎦(Lu)因氧化物較易殿積於毛細管之尖端面上，故於本發明之合金系，係任意的添加元素，其添加量則受限定的。於本發明之合金系，鎦(Lu) 未滿5質量ppm時，則接合線之拉伸強度並無效果。若超過20質量ppm時，則氧化物會澱積於毛細管之尖端面上，而對第二次接合性有惡劣影響，故鎦(Lu)之添加量係在5~20質量ppm的範圍內。
[Sn]
於本發明之合金系，錫(Sn)係對接合線之第二次接合性有效的元素。然而，錫(Sn)因氧化物較易殿積於毛細管之尖端面上，故於本發明之合金系，係任意的添加元素，其添加量則受限定的。於本發明之合金系，錫(Sn)係需為5質量ppm以上。未滿此值時，則接合線之第二次接合性並無效果。於本發明之合金系，為使接合線之第二次接合性穩定，錫(Sn)以在30質量ppm以上為宜。另一方面，於本發明之合金系，錫(Sn)即使超過100質量ppm而變成過多，氧化物亦會澱積於毛細管之尖端面上，而對第二次接合性有惡劣影響。於本發明之合金系，為使第二次接合性穩定，錫(Sn)以於70質量ppm以下為宜。
[Sr]
於本發明之合金系，緦(Sr)係對接合線之第二次接合性有效的元素。加上對熔融銲球之壓接直徑的真圓度有效的元素。然而，緦(Sr)因氧化物較易殿積於毛細管之尖端面上，故於本發明之合金系，係任意的添加元素，其添加量則受限定的。於本發明之合金系，緦(Sr)係需為5質量ppm以上。未滿此值時，則接合 線之第二次接合性並無效果。於本發明之合金系，為使接合線之第二次接合性穩定，緦(Sr)以在30質量ppm以上為宜。另一方面，於本發明之合金系，緦(Sr)即使超過100質量ppm而變成過多，氧化物亦會澱積於毛細管之尖端面上，而對第二次接合性有惡劣影響。於本發明之合金系，為使第二次接合性穩定，緦(Sr)以於70質量ppm以下為宜。
至於本發明之接合線，其第二次接合性、拉伸強度及熔融銲球之壓接直徑的真圓度則依下述方式予以測定。
(1)第二次接合性 第二次接合性，係指將接合線噛合於由經予鍍銀(Ag)的42合金而成的引導框架並予針腳式接合(stitch bonding)之際，施加熱、負載、超音波而使接合線變形，接合至引導框架時的接合容易度。關於第二次接合性，則以進行50萬次接合試驗時，測定出於中途的第二次接合的不能接合數量，予以評估。
(2)拉伸強度 關於伸長率成為4%時的拉伸強度，採用市售的拉伸試驗機予以測定。於室溫，以100mm作為標點距離，利用拉伸試驗機以拉伸速度10mm/分拉伸合金線，求得裂斷時的負載值及伸長率予以測定。且，伸長率係以下式由裂斷時的伸長量求出。
(3)熔融銲球之壓接直徑的真圓度 熔融銲球之壓接直徑的真圓度之評估，係對矽(Si)晶片上之鋁(Al)電極(鋁(Al)厚度：約1x10－6 m)進行球形壓接(ball bonding)，其後於由經予鍍銀(Ag)的42合金而成的引導框架之間進行針腳式接合，並予結線。於該時，跨距(span)係3×10－3 m，腳數為200根，自已結線的接合線之中採用任意的50根接合線予以評估。測定與超音波之施加方向平行的方向之壓接直徑及與超音波之施加方向垂直的方向之壓接直徑，將其比值於0.95~1.05之範圍內者，以◎記號表示；於0.90~1.00之範圍內者(於0.95~1.05之範圍內者除外)，以○記號表示；於其他範圍者，以△記號表示。
(4)金合金線之製造方法 以下說明與本發明有關的金合金線之較宜的製造方法。於高純度金內添加指定量的元素，於真空熔解爐內熔解後，鑄造成晶錠(ingot)。將該晶錠置入帯槽軋輥，採用拉線機進行冷軋加工及中間退火，藉由最終拉線加工，對已製成直徑25×10－6 m之細線後施加最終退火。
(5)用途 由本發明製得的接合線，係較適合於連接IC晶片至腳端引線上的方法。而且，在此所謂的球形壓接，係於以接合線配線IC晶片之電極，尤指Al電極及外部引線或其他電極之際， 接合線與電極部之接合於第一次接合形成熔融銲球，於第二次接合不形成熔融銲球，壓接接合線側面並接合的球形壓接。視必要時，施加超音波且加熱電極部。
[作用]
採用與本發明有關的金合金線或含鈀(Pd)之金合金線，以高速即使數十萬次進行球形壓接，第二次接合性亦不劣化的鋰由雖然並不清楚，但推測如下所述。亦即，藉由電弧放電製作銲球時，或於第一次接合時，使微量的添加元素之氧化物形成並附著於毛細管之尖端部，但已附著的氧化物於每次第二次接合時，被認為會被轉印至接合線側。因此，於毛細管之尖端部上雖然略微的附著氧化物，但不致較
該略微稍厚的澱積而成污染物。此係此種附著物稍厚的澱積於毛細管之尖端部並形成污染物之前，此種附著物可視作於第二次接合作業中被轉印至接合線側。結果，與本發明有關的金合金線或含鈀(Pd)之金合金線被認為可發揮優越的第二次接合性之效果。當然，本發明之接合線，與至目前為止相同的於拉伸強度及真圓度方面發揮優越的效果。
【實施例】
於純度99.999質量%之高純度金或使含有指定量鈀(Pd)的純度99.999質量%之高純度金內微量的添加指定量之添加元素，於真空熔解爐內熔解後，鑄造而得表1所示組成之金合金晶錠。 將該晶錠置入帯槽軋輥進行軋輥加工，採用拉線機進行冷軋加工及中間退火，進行最終拉線加工成最終線徑25 μm，藉由最終熱處理予以加工成伸長率4%。
其他，從1－Be 10質量ppm、Sc 2質量ppm。
(50萬次試驗)
採用球形壓接裝置(K&S公司製造的商品名「Max μm Plus」)對此金合金線連續的於IC晶片之Al電極上及外部配線上進行超音波並用球形壓接50萬次。此時，IC晶片側之球形壓接，係以球形壓接負載0.2N、球形壓接時間10ms、球形壓接功率0.30w之條件進行。此外，外部配線側之第二次接合，係以球形壓接負載0.3N、球形壓接時間10ms、球形壓接功率0.40w之條件進行。
於此試驗，係計數由於第二次接合之不能壓接引起的球形壓接裝置停機之次數，該測定結果示於表2。
(3)熔融銲球之壓接直徑的真圓度 關於熔融銲球之壓接直徑的真圓度之評估，係與進行50萬次壓接的試料另外以上述方法製作試料，採用700根接合線進行評估。亦即，測定與超音波之施加方向平行的方向之壓接直徑及 與超音波之施加方向垂直的方向之壓接直徑，將其比值於0.97~1.03之範圍內者，以◎記號表示；於0.95~1.05之範圍內者(於0.97~1.03之範圍內者除外)，以○記號表示；於其他範圍者，以△記號表示。其測定結果示於表2。
由以上的結果，於表1－1~3、表2，實施例編號1~6係申請專利範圍請求項1記載的組成範圍，於第二次接合的接合不良，於50萬次中有1~3次，真圓度方面，則係良好的。
由此等的結果，得知Mg、In、Al及Yb之微量添加效果係較大的。
此外，同樣的上述表中的編號7~9，係於請求項2之組成範圍內者，由於添加Ca，同樣的降低接合不良，使真圓度提高。
以下同樣的上述表中的編號10~21，係於請求項3之組成範圍內者，對編號1~6之組成，可知再由於添加La、Lu、Sn、Sr的效果，再使第二次接合之不良數降低，亦提高真圓度。
編號22~35係於請求項4之組成範圍內者，顯示出再添加Ca的效果。
編號36~41係於請求項5之組成範圍內者，編號42~50係於請求項6之組成範圍內者，各自對請求項1及2的組成，添加Pd 0.1~1.0質量%，顯示出同樣的效果。
編號51~58係於請求項7之組成範圍內者，編號59~70係於請求項8之組成範圍內者，對上述的請求項3及4之組成顯示出添加Pd的效果。
相對於此等，表內之從1、從2(指習用例1、2)，係於欠缺此等的添加元素之組成範圍內者，真圓度雖然良好，但是對50萬次之接合次數會生成4次的第二次接合不良，又，對減少或超出 本發明之添加元素而逸出該範圍的情形，則表示於比1、比2、比3(指比較例1~3)。此等情形，同樣的真圓度亦雖然良好，但是第二次接合不良有4~5次，反而顯示出惡化的傾向，顯示著需維持該組成範圍一事係重要的。
如上述般，本發明之接合線於50萬次之接合次數方面，均可使接合不良大幅降低。
產業上的可利用性
若依本發明之接合線時，則於由指定範圍之Mg-In-Al-Yb的添加元素系而成之金(Au)合金或含鈀(Pd)的金(Au)合金、此等的合金內，再微量添加鈣(Ca)者，及再於此等合金內微量添加鑭(La)、鎦(Lu)、錫(Sn)或鍶(Sr)者，係第二次接合性優越，而且與至目前為止的接合線同樣的可發揮拉伸強度及壓接直徑之真圓度方面優越的效果，於提高半導體裝置之可靠性方面係有效的。
1‧‧‧毛細管
2‧‧‧接合線
3‧‧‧電氣火炬
4‧‧‧銲球
4’‧‧‧壓接銲球
5‧‧‧IC晶片
6‧‧‧Al電極
7‧‧‧挾持器
8‧‧‧外部配線
100‧‧‧毛細管尖端部
102‧‧‧接合線導出孔
第一圖係說明與本發明之銲球壓接方法有關的接合法之模式圖。
第二圖係表示使用於本發明之接合的毛細管之前端部的截面形狀。
第三圖係表示於本發明之第一次接合時的接合部之形狀的1實施例的照片，供參考用。
第四圖係表示於本發明之第二次接合時的接合部之形狀的1實施例的照片，供參考用。
1‧‧‧毛細管
2‧‧‧接合線
3‧‧‧電氣火炬
4‧‧‧銲球
4’‧‧‧壓接銲球
5‧‧‧IC晶片
6‧‧‧Al電極
7‧‧‧挾持器
8‧‧‧外部配線

Claims (8)

  1. 一種接合線，其特徵在於由鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金。
  2. 一種接合線，其特徵在於由鈣(Ca)5~20質量ppm、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金。
  3. 一種接合線，其特徵在於由鑭(La)5~20質量ppm、鎦(Lu)5~20質量ppm、錫(Sn)5~100質量ppm及鍶(Sr)5~100質量ppm之中至少一種以上、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金。
  4. 一種接合線，其特徵在於由鑭(La)5~20質量ppm、鎦(Lu)5~20質量ppm、錫(Sn)5~100質量ppm及鍶(Sr)5~100質量ppm之中至少一種以上、鈣(Ca)5~20質量ppm、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金。
  5. 一種接合線，其特徵在於由鈀(Pd)0.01~1.2質量%、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au) 而成的金合金。
  6. 一種接合線，其特徵在於由鈀(Pd)0.01~1.2質量%、鈣(Ca)5~20質量ppm、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金。
  7. 一種接合線，其特徵在於由鑭(La)5~20質量ppm、鎦(Lu)5~20質量ppm、錫(Sn)5~100質量ppm及鍶(Sr)5~100質量ppm之中至少一種以上、鈀(Pd)0.01~1.2質量%、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金為特徵的接合線。
  8. 一種接合線，其特徵在於由鑭(La)5~20質量ppm、鎦(Lu)5~20質量ppm、錫(Sn)5~100質量ppm及鍶(Sr)5~100質量ppm之中至少一種以上、鈀(Pd)0.01~1.2質量%、鈣(Ca)5~20質量ppm、鎂(Mg)5~100質量ppm、銦(In)5~20質量ppm、鋁(Al)5~20質量ppm、鐿(Yb)5~20質量ppm、及餘量為純度99.995質量%以上之金(Au)而成的金合金。
TW97141529A 2007-11-06 2008-10-29 接合線 TWI390056B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007289091A JP4150752B1 (ja) 2007-11-06 2007-11-06 ボンディングワイヤ

Publications (2)

Publication Number Publication Date
TW200923107A TW200923107A (en) 2009-06-01
TWI390056B true TWI390056B (zh) 2013-03-21

Family

ID=39846513

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97141529A TWI390056B (zh) 2007-11-06 2008-10-29 接合線

Country Status (9)

Country Link
US (1) US20110058979A1 (zh)
EP (2) EP2369023A1 (zh)
JP (1) JP4150752B1 (zh)
KR (1) KR101124612B1 (zh)
CN (1) CN101842505B (zh)
AT (1) ATE552358T1 (zh)
MY (1) MY147817A (zh)
TW (1) TWI390056B (zh)
WO (1) WO2009060662A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010147187A1 (ja) 2009-06-18 2010-12-23 ローム株式会社 半導体装置
WO2012117512A1 (ja) * 2011-03-01 2012-09-07 田中電子工業株式会社 金（Ａｕ）合金ボンディングワイヤ
JP5053456B1 (ja) * 2011-12-28 2012-10-17 田中電子工業株式会社 半導体装置接続用高純度銅細線
CN102664173A (zh) * 2012-04-20 2012-09-12 日月光半导体制造股份有限公司 用于半导体装置的导线构造及其制造方法
TWI528481B (zh) * 2014-02-13 2016-04-01 新川股份有限公司 球形成裝置、打線裝置以及球形成方法
US9889521B2 (en) * 2014-12-02 2018-02-13 Asm Technology Singapore Pte Ltd Method and system for pull testing of wire bonds
CN113584355A (zh) * 2021-08-03 2021-11-02 上杭县紫金佳博电子新材料科技有限公司 一种键合用铝基合金母线及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330329A (en) * 1979-11-28 1982-05-18 Tanaka Denshi Kogyo Kabushiki Kaisha Gold bonding wire for semiconductor elements and the semiconductor element
JPS5965439A (ja) * 1982-10-06 1984-04-13 Sumitomo Metal Mining Co Ltd ボンデイングワイヤ−
FR2581732A1 (fr) 1985-05-10 1986-11-14 Fremy Raoul Dispositif d'arret pour fluides a double obturateur tournant
JPS63145729A (ja) * 1986-03-28 1988-06-17 Nittetsu Micro Metal:Kk 半導体素子ボンデイング用金線
CN1027822C (zh) * 1991-12-12 1995-03-08 中国有色金属工业总公司昆明贵金属研究所 银基合金电接触材料
JPH08127828A (ja) * 1994-10-28 1996-05-21 Tanaka Denshi Kogyo Kk ボンディング用金線
JPH08193233A (ja) * 1995-01-12 1996-07-30 Mitsubishi Materials Corp 半導体装置用金合金細線
JP3579493B2 (ja) * 1995-04-20 2004-10-20 新日本製鐵株式会社 半導体素子用金合金細線
JP3657087B2 (ja) 1996-07-31 2005-06-08 田中電子工業株式会社 ウエッジボンディング用金合金線
JP3751104B2 (ja) * 1997-02-20 2006-03-01 田中電子工業株式会社 半導体素子ボンディング用金合金線
JP3669809B2 (ja) * 1997-04-25 2005-07-13 田中電子工業株式会社 半導体素子ボンディング用金合金線
JP3669811B2 (ja) * 1997-04-25 2005-07-13 田中電子工業株式会社 半導体素子ボンディング用金合金線
JPH1145902A (ja) * 1997-07-25 1999-02-16 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JPH11186314A (ja) * 1997-12-17 1999-07-09 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JP2000040710A (ja) 1998-07-24 2000-02-08 Sumitomo Metal Mining Co Ltd ボンディング用金合金細線
JP3969671B2 (ja) * 2004-09-30 2007-09-05 田中電子工業株式会社 Ａｕ合金ボンディング・ワイヤ
JP5311715B2 (ja) * 2005-01-24 2013-10-09 新日鉄住金マテリアルズ株式会社 半導体素子接続用金線
JP4793989B2 (ja) * 2006-03-29 2011-10-12 田中電子工業株式会社 高い初期接合性、高い接合信頼性および圧着ボールの高い真円性を有するボンディングワイヤ用金合金線

Also Published As

Publication number Publication date
KR101124612B1 (ko) 2012-03-22
EP2208801B1 (en) 2012-04-04
US20110058979A1 (en) 2011-03-10
JP4150752B1 (ja) 2008-09-17
EP2369023A1 (en) 2011-09-28
ATE552358T1 (de) 2012-04-15
EP2208801A4 (en) 2010-10-20
JP2009114499A (ja) 2009-05-28
EP2208801A1 (en) 2010-07-21
CN101842505A (zh) 2010-09-22
MY147817A (en) 2013-01-31
WO2009060662A1 (ja) 2009-05-14
KR20090087123A (ko) 2009-08-14
CN101842505B (zh) 2012-12-26
TW200923107A (en) 2009-06-01

Similar Documents

Publication Publication Date Title
TWI390056B (zh) 接合線
WO2012043727A1 (ja) 複層銅ボンディングワイヤの接合構造
WO2006073206A9 (ja) 半導体装置用ボンディングワイヤ
JP2007012776A (ja) 半導体装置用ボンディングワイヤ
WO2013018238A1 (ja) ボールボンディングワイヤ
JP3382918B2 (ja) 半導体素子接続用金線
CN111344844B (zh) 钎焊接头和钎焊接头的形成方法
JPH09321076A (ja) バンプ形成用金合金線及びバンプ形成方法
JP2737953B2 (ja) 金バンプ用金合金細線
KR101002062B1 (ko) 와이어 범프
TWI399446B (zh) 銲球接合用金合金線
JP2002009101A (ja) 半導体素子接続用金線
JP2007019349A (ja) ボンディングワイヤ
JPH1098062A (ja) ウエッジボンディング用金合金線
CN111656501A (zh) 接合线
KR101047827B1 (ko) 볼 본딩용 금합금선
JP3445616B2 (ja) 半導体素子用金合金細線
JP3907534B2 (ja) ボンディング用金合金線
JP3586909B2 (ja) ボンディングワイヤ
JP3120940B2 (ja) 半導体素子用球形バンプ
JPH10242192A (ja) ボール押圧方法及び半導体装置の製造方法
JP4318533B2 (ja) ボールバンプ形成用リボン
JP3086126B2 (ja) バンプ用微小金ボール
JPH07201867A (ja) バンプ形成用Ｐｄ合金ワイヤ及びそのＰｄ合金ワイヤを用いたバンプ形成方法並びに半導体装置
JPH11340264A (ja) ワイヤバンプ形成用金合金線及びワイヤバンプ形成方法