CN102664173A - 用于半导体装置的导线构造及其制造方法 - Google Patents

用于半导体装置的导线构造及其制造方法 Download PDF

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CN102664173A
CN102664173A CN2012101169963A CN201210116996A CN102664173A CN 102664173 A CN102664173 A CN 102664173A CN 2012101169963 A CN2012101169963 A CN 2012101169963A CN 201210116996 A CN201210116996 A CN 201210116996A CN 102664173 A CN102664173 A CN 102664173A
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indium
wire
copper conductor
soldered ball
semiconductor device
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唐和明
翁肇甫
叶昶麟
洪志斌
赖逸少
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

一种用于半导体装置的导线构造及其制造方法，所述导线构造包括先加热一含铟材料，使所述含铟材料熔化形成一含铟焊球；并提供一铜导线，所述铜导线具有一前端；以及，使所述铜导线的前端与所述含铟焊球相结合，以构成一导线构造。所述铜导线通过所述含铟焊球的媒介而结合在一芯片的一接垫上，因此可确保所述接垫的结构完整性，以便提升铜导线的打线工艺的加工质量及良率。

Description

用于半导体装置的导线构造及其制造方法
技术领域
本发明是关于一种用于半导体装置的导线构造及其制造方法，特别是关于一种由铜导线及含铟焊球所构成的，用于半导体装置的导线构造及其制造方法。
背景技术
现有半导体集成电路(integrated circuit，IC)芯片封装制造过程中，大多是以金线(gold wire)连接芯片与载板，但相较于金线，铜导线(copper wire)具有低成本的优势且具有较佳的导电性、导热性及机械强度，故铜导线的线径可设计得更细且可提供较佳的散热效率，因而目前有一研发趋势是以铜导线来逐渐取代传统金线，并将其应用于半导体芯片的打线(wire bonding)工艺中。
按照现有铜导线的打线(wire bonding)工艺大致包含下述步骤：首先，提供一芯片及一载板，所述芯片具有数个接垫(例如铝垫)，所述载板具有数个焊垫(例如铜垫)，且所述载板承载所述芯片；接着，通过一焊针将一铜导线以电子点火方式处理以形成一结球端(即第一端)，并利用所述焊针将所述结球端热压结合在所述芯片的接垫上；之后，移动所述焊针以引导所述铜导线至所述载板的对应焊垫上方；最后，利用所述焊针将所述铜导线热压并扯断于所述焊垫上而形成一尾端(即第二端)。
在上述打线期间，当所述铜导线形成所述结球端时，所述焊针是以一垂直向的压合力撞击所述接垫，再以横向的拉力引导所述铜导线，而使所述铜导线呈弧形，最后再扯断所述铜导线形成所述尾端。
然而，所述芯片的主动表面上的接垫通常是铝垫，铝金属本身的杨氏模数(Young's modulus)约为68-70 GPa，同时所述铜导线的铜金属本身的杨氏模数约为110 GPa。由于所述铜导线以杨氏模数为参考的硬度明显大于所述芯片的接垫的硬度，因此当所述焊针以一垂直向的压合力(即正向应力)使所述铜导线的结球端撞击所述接垫时，除了所述结球端会受压变形(即正向应变)外，所述接垫也极容易因所述结球端撞击的正向应力而同时产生严重形变或破裂(crack)等缺陷。严重时，甚至所述接垫下方的钝化层(passivation)、集成电路层或硅基材也可能产生破裂缺陷。结果，上述结球端造成的接垫破裂问题将会降低铜导线的打线工艺的加工质量及良率。
所以，有必要提供一种用于半导体装置的导线构造及其制造方法，以解决现有技术所存在的接垫破裂问题。
发明内容
本发明的一个目的在于提供一种用于半导体装置的导线构造，其包含：一铜导线及一含铟焊球。所述铜导线具有一前端，及所述含铟焊球结合在所述铜导线的前端。所述铜导线的前端插入所述含铟焊球内，以构成一导线构造。
再者，本发明的另一个目的在于提供一种半导体装置，其包含：一芯片、一载板及至少一导线构造。所述芯片具有至少一接垫。所述载板具有至少一焊垫，且所述载板承载所述芯片。所述至少一导线构造各具有一铜导线及一含铟焊球，所述铜导线具有一前端及一尾端，以及所述含铟焊球结合在所述铜导线的前端，且所述铜导线的前端插入所述含铟焊球内。所述含铟焊球受压变形结合在所述芯片的接垫上，以及所述铜导线的尾端结合在所述载板的焊垫上。
另外，本发明的又一个目的在于提供一种用于半导体装置的导线构造的制造方法，其包含下述步骤：加热一含铟材料，使所述含铟材料熔化形成一含铟焊球。接着，提供一铜导线，所述铜导线具有一前端。随后，使所述铜导线的前端与所述含铟焊球相结合，以构成一导线构造。
附图说明
图1是本发明一实施例用于半导体装置的导线构造的剖视图；
图2是本发明一实施例半导体装置的剖视图；
图3A、3B及3C图是本发明一实施例用于半导体装置的导线构造的制造方法的流程示意图；
图4A、4B及4C图是本发明另一实施例用于半导体装置的导线构造的制造方法的流程示意图；
图5A、5B及5C图是本发明又一实施例用于半导体装置的导线构造的制造方法的流程示意图；
图6A、6B及6C图是本发明一实施例用于半导体装置的导线构造的打线方法的流程示意图；
主要组件符号说明：
10、导线构造；11、铜导线；111、前端；
12、含铟焊球；120、含铟材料；121、氧化铟保护层；
13、介金属层；14、尾端；20、芯片；21、接垫；
30、载板；31、焊垫；
40、配料管；41、容置槽；42、雷射装置；
50、焊针；51、供线孔；
60、线材供应单元；61、容置槽；62、加热器；
70、复合式焊针；71、第一供线孔；72、第二供线孔；
80、电子点火杆。
具体实施方式
请参照图1所示，其揭示本发明一实施例用于半导体装置的导线构造10，所述导线构造10主要应用于半导体装置的封装工艺中的打线(wire bonding)作业，所述导线构造10包含：一铜导线11及一含铟焊球12。所述铜导线11具有一前端111，所述含铟焊球12结合在所述铜导线11的前端111，且所述铜导线11的前端111插入所述含铟焊球12内。本实施例所述铜导线11的材质可选自纯铜(Cu)或铜合金，其中铜金属的杨氏模数约为110 GPa。所述铜导线11具有一线径大致介于15至35微米(μm)之间，例如为15、20、25、30或35微米等。所述含铟焊球12的材质则选自纯铟(In)、铟银(In/Ag)合金或铟锡(In/Sn)合金，其中铟金属的杨氏模数约为10 GPa。在本实施例中，所述含铟焊球12具有一球径大致介于50至65微米之间，例如为50、55、60或65微米等。所述铜导线11的前端111插入所述含铟焊球12内的长度介于所述含铟焊球的球径的1/4至3/4之间，例如为1/4、1/3、1/2、2/5或3/4等。
再者，所述铜导线11的前端111与所述含铟焊球12之间将形成一介金属(intermetallic compound，IMC)层13，所述介金属层13的介金属化合物可为Cu2In、Cu7In3或Cu11In9；以及，所述介金属层13的厚度大致介于0.01至1微米之间，例如为0.01、0.05、0.1、0.5或1微米等。另外，所述含铟焊球12的表面具有一氧化铟保护层121，所述氧化铟保护层121的厚度大致介于10至100纳米(nm)之间，例如为10、20、30、50、70、80或100纳米等。
请参照图2所示，通过现有打线作业流程，所述铜导线11的前端111可利用所述含铟焊球12结合在一芯片20的一接垫21上，同时将所述铜导线11另具有的一尾端14结合在一载板30的一焊垫31上，因而使所述导线构造10电性连接所述接垫21及焊垫31。
如上所述，本发明上述实施例利用铟金属的熔点低及容易加工的材料特性来加工形成所述含铟焊球12，并使含铟焊球12结合在所述铜导线11的前端111，且由于铜与铟之间形成的介金属层13具有成长缓慢且足够结合强度的特性，故有利于确保所述铜导线11与含铟焊球12之间的结合可靠度。再者，本发明上述实施例进一步利用所述含铟焊球12的杨氏模数(硬度)明显小于所述芯片20的接垫21(铝垫)的杨氏模数(硬度)的材料特性，使所述铜导线11通过所述含铟焊球12的媒介而结合在所述芯片20的接垫21，如此不但所述含铟焊球12能受压变形而稳固的结合在所述芯片20的接垫21上，而且所述芯片20的接垫21也不会因为所述含铟焊球12撞击的正向应力而影响接垫21的结构完整性，因而确实有利于提升所述铜导线11的打线工艺的加工质量及良率。
此外，所述芯片20例如是指由半导体晶圆切割而成的半导体芯片，例如硅芯片或砷化镓芯片等。所述芯片20的接垫21是指硬度(或杨氏模数)小于铜但大于铟的金属垫，例如为铝垫，但并不限于此，其中铝金属的杨氏模数约为68-70 GPa。
再者，所述载板30可选自多层印刷电路基板(substrate)或导线架(leadframe)。所述载板30的焊垫31为导电性佳的金属垫，例如为铜垫等，其中所述焊垫31的表面也可预先形成一助焊层，例如镍金(Ni/Au)复合层、镍/钯/金(Ni/Pd/Au)复合层、银层或有机可焊性保护层(organic solderability preservative，OSP)等。
本发明将于下文利用图3A至3C、图4A至4C及图5A至5C来逐一详细说明各种制造所述导线构造10的可行实施例及其各步骤的实施细节与原理：
请参照图3A所示，在本发明的一实施例所揭示的导线构造的制造方法中，预先使所述含铟材料120形成球状，并利用一配料管40装载所述球状的含铟材料120；接着，由所述配料管40逐一输出所述球状的含铟材料120至一容置槽41中，所述配料管40的一内部通道及所述容置槽41的一容置空间皆具有一宽度稍大于所述球状的含铟材料120的球径，且所述容置槽41可利用一移动装置(例如机械手臂或输送带)移动至所需的位置。
请参照图3B所示加热位于所述容置槽41中所述球状的含铟材料120，使所述球状的含铟材料120熔化或软化并初步形成所述含铟焊球12。本实施例是利用一雷射装置42用以发射一激光束来瞬间加热位于所述容置槽41中的所述球状的含铟材料120，使所述球状的含铟材料120的温度高于或接近其熔点(例如铟的熔点为156.6℃)因而熔化或软化并初步形成所述含铟焊球12，此时的所述含铟焊球12尚处于熔化或软化状态。
请参照图3C所示，藉由所述移动装置移动所述容置槽41，或是藉由移动所述焊针50到所述容置槽41的所在位置。一焊针50来提供一铜导线11；以及移动所述焊针50使所述铜导线11的前端111与所述含铟焊球12相结合，以构成一导线构造10。所述焊针50具有一供线孔51可以连续供给所述铜导线11，并可以在欲结合所述含铟焊球12时暂时停止吐线动作，而使所述铜导线11的一前端111露出所述供线孔51外约一段预定长度。在结合时，藉由移动所述焊针50或所述容置槽41的移动装置，而使所述铜导线11的前端111插入所述含铟焊球12中，如此即可完成所述导线构造10的制作，并以所述焊针50移动所述导线构造10至一打线作业区进行打线。
请参照图4A所示，在本发明的另一实施例所揭示的导线构造的制造方法中，利用一线材供应单元60先供应一线状的含铟材料120；接着，截取一段所述线状的含铟材料120，并将所述线状的含铟材料120放置到一容置槽61中。所述线材供应单元60例如选自另一焊针，其用以连续供给所述线状的含铟材料120，并可以在欲截取所述线状的含铟材料120时暂时停止吐线动作，而使所述线状的含铟材料120的一前端露出所述线材供应单元60的一供线孔外约一段预定长度。接着，可利用刀具或雷射来切断及截取一段所述线状的含铟材料120，并将所述线状的含铟材料120放置到所述容置槽61中。
请参照图4B所示，加热位于所述容置槽61中的所述线状的含铟材料120，使所述线状的含铟材料120熔化或软化，形成球状的含铟焊球120。所述容置槽61的容置空间的宽度稍大于后续含铟焊球12的预设球径，且所述容置槽61本身的内部或外部可配置一加热器62，例如为一加热线圈。因此，可利用所述加热器62(或者利用一雷射装置发射的一激光束)来加热位于所述容置槽61中的所述线状的含铟材料120，使温度高于或接近其熔点(例如铟的熔点为156.6℃)因而熔化或软化并初步形成球状的含铟焊球120。
请参照图4C所示，是以一焊针50来提供一铜导线11；以及再一步骤也是藉由移动该焊针50使所述铜导线11的前端111与所述含铟焊球12相结合，以构成一导线构造10。详细步骤如上所述，在此不再赘述。
请参照图5A所示，在本发明的另一实施例所揭示的导线构造的制造方法中，是利用一复合式焊针70同时供应所述铜导线11及一线状的含铟材料120，所述复合式焊针70具有一第一供线孔71及一第二供线孔72，可用以分别连续供给所述铜导线11及所述线状的含铟材料120。所述铜导线11及所述线状的含铟材料120分别露出所述复合式焊针70的第一及第二供线孔71、72外约一段预定长度，其中所述铜导线11露出的长度可以小于或等于所述线状的含铟材料120露出的长度。
请参照图5B所示，在进行加热时，可以选择利用一电子点火杆80、一激光束(未绘示)或一加热线圈(未绘示)来加热裸露出所述复合式焊针70外的所述线状的含铟材料120，使温度高于或接近其熔点(例如铟的熔点为156.6℃)因而熔化或软化并初步形成所述含铟焊球12。
所述复合式焊针70的第一及第二供线孔71、72是被设计成可以使所述铜导线11与所述线状的含铟材料120的间距小于所述含铟焊球12的半径。因此，当形成所述含铟焊球12时，所述含铟焊球12将可接触以及自发性沾黏附着到相邻的所述铜导线11的前端111上，使所述铜导线11的前端111位于所述含铟焊球12中。
请参照图5C所示，所述含铟焊球12脱离所述线状的含铟材料120，必要时，所述线状的含铟材料120也可在此时适当向所述第二供线孔72内缩回一小段距离，以促使所述含铟焊球12顺利脱离所述线状的含铟材料120。藉此，即可完成所述导线构造10的制作，并以所述焊针50移动所述导线构造10至一打线作业区进行打线。
请参照图6A所示，其揭示本发明一实施例的用于半导体装置的导线构造的打线方法，它是使用上述任意一种制造方法制备后的导线构造10来实施铜导线的打线工艺。
提供一芯片20及一载板30，所述芯片20具有数个接垫21(例如铝垫)，所述载板30具有数个焊垫31(例如铜垫)，且所述载板30承载所述芯片20；通过一焊针50来提供一铜导线11，其中所述铜导线11的前端111预先结合所述含铟焊球12；以所述含铟焊球12作为一结球端(即第一端)，并利用所述焊针50将所述含铟焊球12热压结合在所述芯片20的接垫21上。
在上述以所述含铟焊球12作为结球端的步骤中，本发明可以在刚进行图3A至3C、图4A至4C或图5A至5C的制造方法后，趁着所述含铟焊球12尚未固化时，立即利用所述焊针50将所述含铟焊球12热压结合在所述芯片20的接垫21上；或者，亦可以在所述含铟焊球12已固化后，进一步再利用一电子点火杆(未绘示)来再次熔化或软化所述含铟焊球12，以利用所述焊针50将所述含铟焊球12热压结合在所述芯片20的接垫21上。若是使用图5A至5C的制造方法制作所述导线构造10，则所述焊针50即为所述复合式焊针70。
请参照图6B所示，接着移动所述焊针50以引导所述铜导线11至所述载板30的对应焊垫31上方。
请参照图6C所示，利用所述焊针50将所述铜导线11热压并扯断于所述焊垫31上而形成一尾端14(即第二端)。所述焊针50(或所述复合式焊针70)接着将返回进行图3C、4C或5A图的位置，以重新在所述铜导线11的前端111上制作所述含铟焊球12。
虽然本发明已以较佳实施例揭露，然其并非用以限制本发明，任何熟习此项技艺的人士，在不脱离本发明之精神和范围内，当可作各种更动与修饰，因此本发明的保护范围当视后附的申请专利范围所界定者为准。 

Claims (13)

1.一种用于半导体装置的导线构造，其特征在于，包含：
一铜导线，具有一前端；以及
一含铟焊球，结合在所述铜导线的前端，其中所述铜导线的前端插入所述含铟焊球内，以构成一导线构造。
2.如权利要求1所述用于半导体装置的导线构造，其特征在于，所述铜导线的材质选自纯铜或铜合金；以及所述含铟焊球的材质选自纯铟、铟银合金或铟锡合金。
3.如权利要求1所述用于半导体装置的导线构造，其特征在于，所述铜导线的前端与所述含铟焊球之间形成一介金属层，所述介金属层为包含Cu2In、Cu7In3或Cu11In9中至少一种以上的介金属化合物；以及所述介金属层的厚度介于0.01至1微米之间。
4.如权利要求1所述用于半导体装置的导线构造，其特征在于，所述含铟焊球的表面具有一氧化铟保护层，所述氧化铟保护层的厚度介于10至100纳米之间。
5.一种半导体装置，采用权利要求1所述的用于半导体装置的导线构造，其特征在于，包含：
一芯片，具有至少一接垫；
一载板具有至少一焊垫，且所述载板承载所述芯片；以及
至少一导线构造，各具有一铜导线和一含铟焊球，所述铜导线具有一前端及一尾端，以及所述含铟焊球结合在所述铜导线的前端；其中所述含铟焊球结合在所述芯片的接垫上，以及所述铜导线的尾端结合在所述载板的焊垫上。
6.如权利要求5所述的半导体装置，其特征在于，所述铜导线的材质选自纯铜或铜合金；以及所述含铟焊球的材质选自纯铟、铟银合金或铟锡合金。
7.如权利要求5所述的半导体装置，其特征在于，所述铜导线的前端与所述含铟焊球之间形成一介金属层，所述介金属层为包含Cu2In、Cu7In3或Cu11In9中至少一种以上的介金属化合物；以及所述介金属层的厚度介于0.01至1微米之间。
8.一种用于半导体装置的导线构造的制造方法，采用权利要求1所述的用于半导体装置的导线构造，其特征在于，包含以下步骤：
加热一含铟材料，使所述含铟材料熔化形成一含铟焊球；
提供一铜导线，所述铜导线具有一前端；以及
使所述铜导线的前端与所述含铟焊球相结合，以构成一导线构造。
9.如权利要求8所述的用于半导体装置的导线构造的制造方法，其特征在于，在加热所述含铟材料的步骤中，包含：
预先使所述含铟材料形成球状，并利用一配料管装载所述球状的含铟材料；
由所述配料管输出所述球状的含铟材料至一容置槽中；以及
加热位于所述容置槽中的所述的球状含铟材料，使所述球状的含铟材料熔化或软化形成所述含铟焊球。
10.如权利要求8所述的用于半导体装置的导线构造的制造方法，其特征在于，在加热所述含铟材料的步骤中，包含：
利用一线材供应单元供应一线状的含铟材料；
截取一段所述线状的含铟材料，并放置于一容置槽中；以及
加热位于所述容置槽中的所述线状的含铟材料，使所述线状的含铟材料熔化或软化形成所述含铟焊球。
11.如权利要求8所述的用于半导体装置的导线构造的制造方法，其特征在于，在加热所述含铟材料的步骤中，包含：
利用一复合式焊针，同时供应所述铜导线及一线状的含铟材料，使所述铜导线与所述线状的含铟材料相互邻接；以及
加热一段所述线状的含铟材料，使所述线状的含铟材料熔化或软化形成所述含铟焊球。
12.如权利要求11所述的用于半导体装置的导线构造的制造方法，其特征在于，选择利用一电子点火杆、一激光束或一加热线圈来加热裸露出所述复合式焊针外的所述线状含铟材料。
13.如权利要求8所述的用于半导体装置的导线构造的制造方法，其特征在于，所述铜导线的材质选自纯铜或铜合金；所述含铟焊球的材质选自纯铟、铟银合金或铟锡合金。
CN2012101169963A 2012-04-20 2012-04-20 用于半导体装置的导线构造及其制造方法 Pending CN102664173A (zh)

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