CN109449087A - 一种铜镀钯再镀镍键合丝及其制备方法 - Google Patents

一种铜镀钯再镀镍键合丝及其制备方法 Download PDF

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CN109449087A
CN109449087A CN201811245101.XA CN201811245101A CN109449087A CN 109449087 A CN109449087 A CN 109449087A CN 201811245101 A CN201811245101 A CN 201811245101A CN 109449087 A CN109449087 A CN 109449087A
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copper
plating
palladium
nickel
bonding wire
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张军伟
张贺源
冯忠卿
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Shenzhen Unitoll Application Materials Co Ltd
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Abstract

本发明公开了一种铜镀钯再镀镍键合丝，包括铜丝基材，所述铜丝基材表面依次镀覆有镀钯层和镀镍层，本发明还公开了所述铜镀钯再镀镍键合丝的制备方法，本发明的有益效果是所述铜丝基材的外表面依次镀覆有镀镍层、镀钯层和镀金层；由于铜和镍的结合力很好，镍和钯的结合力也很好，该镀层方式解决了铜钯结合力差，大大提高了成品率和生产效率；实现了结合力高，键合力强，方便镍钯金框架的焊接且焊点无变形缺陷，能够防止后续拉丝过程中剥落和裂纹的效果。

Description

一种铜镀钯再镀镍键合丝及其制备方法
技术领域
本发明涉及半导体集成电路芯片封装领域，具体是一种铜镀钯再镀镍键合丝及其制备方法。
背景技术
半导体集成电路制造完成后所得的芯片虽然已经具有特定的功能，但是要实现该功能，必须通过与外部电子元件的连接。而半导体集成电路芯片需要经过与封装体的键合工序，最终得到芯片封装，如此才能通过封装的引脚与外部电子元件连接。在芯片与封装体的键合工艺中，都通过键合线将芯片上的焊盘与封装体的引脚进行电连接。所以键合线是实现芯片功能必不可少的材料。
对于当前半导体封装用键合丝替代材料的选择，市场主要选择镀钯铜线。镀钯铜线具有高电导率和导热率，并能形成更可靠的金属间结合层，由此带来高温环境下的产品可靠性优势。相对于金线，具有较高的杨氏模量，因此，镀铜线具有更好的线弧特性。但是，其延展性不好，在加工过程中容易被破坏。
发明内容
本发明的目的在于提供一种铜镀钯再镀镍键合丝及其制备方法，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：
一种铜镀钯再镀镍键合丝，包括铜丝基材，所述铜丝基材表面依次镀覆有镀钯层和镀镍层。
作为本发明进一步的方案：所述铜丝基材通过在高纯铜中添加微量金属元素进行单晶熔炼制成，所述高纯铜的纯度大于99.9995%。
作为本发明进一步的方案：所述微量金属元素为铬、银和金，所述高纯铜与铬、银以及金之间的按照重量份的比例为99:0.4:0.4:0.2。
作为本发明进一步的方案：所述镀钯层的厚度为0.06um～0.12μm，镀镍层厚度为3um～5.0um。
作为本发明进一步的方案：所述镀钯层采用纯度大于99.99%的金属钯为原料，所述镀镍层采用纯度大于99.99%的金属镍为原料。
作为本发明进一步的方案：所述铜镀钯再镀镍键合丝的直径为15～40μm。
本实施例中，所述铜镀钯再镀镍键合丝的制备方法，步骤如下：
1）将高纯铜置入熔炼炉熔化，然后按配比加入铬、银和金，经过单晶熔炼并拉伸成直径为0.25mm的铜芯；
2）通过电镀或化学镀或真空镀将纯度大于99.99%的金属钯镀于步骤1）所获得的铜芯表面；
3）经过高压清洗后，通过电镀或化学镀或真空镀将纯度大于99.99%的金属镍镀于步骤2）所获得的镀钯层表面；
4）将表面镀钯镍銅丝基材进行超细拉伸，获得表面镀钯镍键合丝；
5）将表面镀钯镍键合丝进行动态连续退火，退火温度为490-510°C，温区总长度700mm，退火速度1.5m/sec，得所需铜镀钯再镀镍键合丝。
与现有技术相比，本发明的有益效果是：本发明的有益效果是所述铜丝基材的外表面依次镀覆有镀镍层、镀钯层和镀金层；由于铜和镍的结合力很好，镍和钯的结合力也很好，该镀层方式解决了铜钯结合力差，大大提高了成品率和生产效率；实现了结合力高，键合力强，方便镍钯金框架的焊接且焊点无变形缺陷，能够防止后续拉丝过程中剥落和裂纹的效果。
附图说明
图1为铜镀钯再镀镍键合丝的示意图。
图中：1-铜丝基材、2-镀钯层、3-镀镍层。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
请参阅图1，本发明实施例中，一种铜镀钯再镀镍键合丝，包括铜丝基材1，所述铜丝基材1通过在高纯铜中添加微量金属元素进行单晶熔炼制成，所述高纯铜的纯度大于99.9995%，所述微量金属元素为铬、银和金，所述高纯铜与铬、银以及金之间的按照重量份的比例为99:0.4:0.4:0.2，所述铜丝基材1表面依次镀覆有镀钯层2和镀镍层3，所述镀钯层2的厚度为0.06μm，镀镍层3厚度为3umum，所述镀钯层2采用纯度大于99.99%的金属钯为原料，所述镀镍层3采用纯度大于99.99%的金属镍为原料，所述铜镀钯再镀镍键合丝直径为15μm。
本实施例中，所述铜镀钯再镀镍键合丝的制备方法，步骤如下：
1）将高纯铜置入熔炼炉熔化，然后按配比加入铬、银和金，经过单晶熔炼并拉伸成直径为0.25mm的铜芯；
2）通过电镀将纯度大于99.99%的金属钯镀于步骤1）所获得的铜芯表面，形成厚度为0.06μm的镀钯层2；
3）经过高压清洗后，通过电镀将纯度大于99.99%的金属镍镀于步骤2）所获得的镀钯层2表面，形成厚度为3um的镀镍层3；
4）将表面镀钯镍銅丝基材进行超细拉伸，获得直径为15μm的表面镀钯镍键合丝；
5）将表面镀钯镍键合丝进行动态连续退火，退火温度为490°C，温区总长度700mm，退火速度1.5m/sec，得所需铜镀钯再镀镍键合丝。
实施例2
请参阅图1，本发明实施例中，一种铜镀钯再镀镍键合丝，包括铜丝基材1，所述铜丝基材1通过在高纯铜中添加微量金属元素进行单晶熔炼制成，所述高纯铜的纯度大于99.9995%，所述微量金属元素为铬、银和金，所述高纯铜与铬、银以及金之间的按照重量份的比例为99:0.4:0.4:0.2，所述铜丝基材1表面依次镀覆有镀钯层2和镀镍层3，所述镀钯层2的厚度为0.09μm，镀镍层3厚度为4um，所述镀钯层2采用纯度大于99.99%的金属钯为原料，所述镀镍层3采用纯度大于99.99%的金属镍为原料，所述铜镀钯再镀镍键合丝直径为25μm。
本实施例中，所述铜镀钯再镀镍键合丝的制备方法，步骤如下：
1）将高纯铜置入熔炼炉熔化，然后按配比加入铬、银和金，经过单晶熔炼并拉伸成直径为0.25mm的铜芯；
2）通过化学镀将纯度大于99.99%的金属钯镀于步骤1）所获得的铜芯表面，形成厚度为0.09μm的镀钯层2；
3）经过高压清洗后，通过化学镀将纯度大于99.99%的金属镍镀于步骤2）所获得的镀钯层2表面，形成厚度为4um的镀镍层3；
4）将表面镀钯镍銅丝基材进行超细拉伸，获得直径为25μm的表面镀钯镍键合丝；
5）将表面镀钯镍键合丝进行动态连续退火，退火温度为500°C，温区总长度700mm，退火速度1.5m/sec，得所需铜镀钯再镀镍键合丝。
实施例3
请参阅图1，本发明实施例中，一种铜镀钯再镀镍键合丝，包括铜丝基材1，所述铜丝基材1通过在高纯铜中添加微量金属元素进行单晶熔炼制成，所述高纯铜的纯度大于99.9995%，所述微量金属元素为铬、银和金，所述高纯铜与铬、银以及金之间的按照重量份的比例为99:0.4:0.4:0.2，所述铜丝基材1表面依次镀覆有镀钯层2和镀镍层3，所述镀钯层2的厚度为0.12μm，镀镍层3厚度为5.0um，所述镀钯层2采用纯度大于99.99%的金属钯为原料，所述镀镍层3采用纯度大于99.99%的金属镍为原料，所述铜镀钯再镀镍键合丝直径为40μm。
本实施例中，所述铜镀钯再镀镍键合丝的制备方法，步骤如下：
1）将高纯铜置入熔炼炉熔化，然后按配比加入铬、银和金，经过单晶熔炼并拉伸成直径为0.25mm的铜芯；
2）通过真空镀将纯度大于99.99%的金属钯镀于步骤1）所获得的铜芯表面，形成厚度为0.12μm的镀钯层2；
3）经过高压清洗后，通过真空镀将纯度大于99.99%的金属镍镀于步骤2）所获得的镀钯层2表面，形成厚度为5.0um的镀镍层3；
4）将表面镀钯镍銅丝基材进行超细拉伸，获得直径为40μm的表面镀钯镍键合丝；
5）将表面镀钯镍键合丝进行动态连续退火，退火温度为510°C，温区总长度700mm，退火速度1.5m/sec，得所需铜镀钯再镀镍键合丝。
本发明的有益效果是所述铜丝基材的外表面依次镀覆有镀镍层、镀钯层和镀金层；由于铜和镍的结合力很好，镍和钯的结合力也很好，该镀层方式解决了铜钯结合力差，大大提高了成品率和生产效率；实现了结合力高，键合力强，方便镍钯金框架的焊接且焊点无变形缺陷，能够防止后续拉丝过程中剥落和裂纹的效果。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (8)

1.一种铜镀钯再镀镍键合丝，包括铜丝基材（1），其特征在于，所述铜丝基材（1）表面依次镀覆有镀钯层（2）和镀镍层（3）。
2.根据权利要求1所述的铜镀钯再镀镍键合丝，其特征在于，所述铜丝基材（1）通过在高纯铜中添加微量金属元素进行单晶熔炼制成，所述高纯铜的纯度大于99.9995%。
3.根据权利要求2所述的铜镀钯再镀镍键合丝，其特征在于，所述微量金属元素为铬、银和金，所述高纯铜与铬、银以及金之间的按照重量份的比例为99:0.4:0.4:0.2。
4.根据权利要求1所述的铜镀钯再镀镍键合丝，其特征在于，所述镀钯层（2）的厚度为0.06um～0.12μm，镀镍层（3）厚度为3um～5.0um。
5.根据权利要求1所述的铜镀钯再镀镍键合丝，其特征在于，所述铜镀钯再镀镍键合丝的直径为15～40μm。
6.根据权利要求1或4所述的铜镀钯再镀镍键合丝，其特征在于，所述镀钯层（2）采用纯度大于99.99%的金属钯为原料，所述镀镍层（3）采用纯度大于99.99%的金属镍为原料。
7.根据权利要求1-5任一所述的铜镀钯再镀镍键合丝的制备方法，其特征在于，步骤如下：
1）将高纯铜置入熔炼炉熔化，然后按配比加入铬、银和金，经过单晶熔炼并拉伸成直径为0.25mm的铜芯；
2）通过电镀或化学镀或真空镀将纯度大于99.99%的金属钯镀于步骤1）所获得的铜芯表面；
3）经过高压清洗后，通过电镀或化学镀或真空镀将纯度大于99.99%的金属镍镀于步骤2）所获得的镀钯层表面；
4）将表面镀钯镍銅丝基材进行超细拉伸，获得表面镀钯镍键合丝；
5）将表面镀钯镍键合丝进行动态连续退火，退火温度为490-510°C，温区总长度700mm，退火速度1.5m/sec，得所需铜镀钯再镀镍键合丝。
8.根据权利要求7所述的铜镀钯再镀镍键合丝的制备方法在制备半导体封装用键合丝中的应用。
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CN115087760A (zh) * 2020-02-18 2022-09-20 日本高纯度化学株式会社 镀覆层叠体
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