CN103811449B - 焊球凸块结构及其形成方法 - Google Patents

焊球凸块结构及其形成方法 Download PDF

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Publication number
CN103811449B
CN103811449B CN201310308953.XA CN201310308953A CN103811449B CN 103811449 B CN103811449 B CN 103811449B CN 201310308953 A CN201310308953 A CN 201310308953A CN 103811449 B CN103811449 B CN 103811449B
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China
Prior art keywords
soldered ball
ball projection
silver alloy
projection
substrate
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Expired - Fee Related
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CN201310308953.XA
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CN103811449A (zh
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庄东汉
蔡幸桦
李俊德
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WIRE Tech CO Ltd
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WIRE Tech CO Ltd
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Ceramic Engineering (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

本发明实施例提供一种焊球凸块结构及其形成方法。焊球凸块结构包括基板；以及第一银合金焊球凸块，设置于该基板上，其中第一银合金焊球凸块中银:金:钯的重量比=60～99.98：0.01～30：0.01～10。本发明的焊球凸块结构具有极高的可靠度。

Description

焊球凸块结构及其形成方法
技术领域
本发明涉及一种焊球凸块结构及其形成方法，且尤其涉及一种银合金焊球凸块结构及其形成方法。
背景技术
集成电路(IC)芯片对外联机（Interconnection）的方法包括：打线接合(WireBonding)、卷带自动接合(Tape Automated Bonding)及倒装芯片接合(Flip ChipBonding)，其中卷带自动接合与倒装芯片接合均使用导电焊球凸块作为芯片与基板的联结接点，亦均属于高密度封装的联机技术。
倒装芯片接合具有接点数高、接点间距小、封装面积小、高频性能佳、可靠度高以及耐电磁波干扰等优点，已普遍采用于集成电路及发光二极体(LED)等电子产品封装工艺中。
倒装芯片接合最重要的关键技术在于凸块（Bump）的制作及组装。倒装芯片凸块材料大多使用焊锡合金，例如：锡-37铅、锡-9锌、锡-0.7铜、锡-3.5银、锡-51铟、锡-58铋、锡-3银-0.5铜、锡-9锌-3铋等各种合金组成。
焊锡凸块(Solder Bump)的制作方法主要可分为电镀（Electroplating）及锡膏钢版印刷（Stencil Printing）两种。电镀法除了环保问题，且难以形成特定的合金组成。此外，在形成无铅焊锡时，很难找到适当镀液配方与电镀工艺参数。例如，欲形成凸块如锡-3.5银、锡-0.7铜及锡-3银-0.5铜时，其合金组成很难稳定控制；欲形成焊球凸块如锡-51铟、锡-58铋及锡-9锌-3铋时，则难以找到理想镀液。
因此，近年来大部分封装厂针对倒装芯片组装焊球凸块的制作均逐渐以锡膏(solder paste)钢版印刷(Stencil Printing)为主。然而，倒装芯片锡膏的关键材料在于锡粉(tin powder)。一般而言，在表面实装（Surface Mount Technology；SMT）所使用的锡粉粒径大约为30μm至50μm，这样的尺寸在制造上较为容易。然而，由于倒装芯片凸块的尺寸在120μm以下，其锡膏所使用锡粉粒径必须大约在10μm以下，故其制作与粒径筛选困难度均相当高。此外，当倒装芯片焊球凸块尺寸减小至100μm以下甚至达到50μm时，即使使用尺寸在10μm以下的锡粉，其单颗焊锡凸块仍只有少数几个锡粉分布其中，故于回焊(resolder)后将造成很严重的共平面度（Coplanarity）问题。另外，以锡膏制作倒装芯片凸块的问题还包括助焊剂(flux)回焊后会留下空孔，以及在接点间距小至100μm以下时，锡膏钢版印刷不良率大增等问题。
另一方面，卷带自动接合方法则为另一种在高密度封装的联机技术。卷带自动接合具有高接点数、封装薄形化与轻量化、接点强度高、电性与热性佳、工艺可自动化及可先行测试等优点，特别适用在一般要求轻薄及高密度的消费性电子产品。导电凸块的制作亦是卷带自动接合的关键技术。然而，目前所使用的金焊球凸块(Gold Stud Bump)不仅有材料成本高的缺点，且很容易与芯片的铝垫形成大量脆性介金属化合物及克肯达尔(Kirkendall)孔洞，不利于电子产品的可靠度。
发明内容
有鉴于此，本发明一实施例提供一种焊球凸块结构，包括：一基板；以及一第一银合金焊球凸块，设置于该基板上，其中该第一银合金焊球凸块中银:金:钯的重量比=60～99.98：0.01～30：0.01～10。
本发明另一实施例提供一种焊球凸块结构的形成方法，包括：提供一银合金焊线；烧熔该银合金焊线的一端以形成一第一球状物；将该第一球状物接合至一基板上；以及截断该银合金焊线，使得该第一球状物留在该基板上以形成一第一银合金焊球凸块，其中该银合金焊线中银:金:钯的重量比=60～99.98：0.01～30：0.01～10。
因而，在本发明的实施例中提供一种创新的银合金焊球凸块及其制造与组装方法。其中，银合金焊球凸块与焊垫接合可形成足够的介金属层，确保其接合性。然而，其介金属化合物的成长极为缓慢，故不会导致接合介面脆化，因此有极高的可靠度。此外，本发明各实施例的银合金焊球凸块与各种电镀焊锡合金焊球凸块相较，无环境污染的顾虑，且其合金组成可以很精确控制，亦无焊锡合金焊球凸块的共平面度问题。再者，本发明的银合金焊球焊球凸块更可应用于晶圆层级封装(Wafer Level Package)。
为让本发明的上述和其他目的、特征、和优点能更明显易懂，下文特举出较佳实施例，并配合附图，作详细说明如下。
附图说明
图1显示在本发明一实施例中形成焊球凸块结构的流程图。
图2至图5显示在本发明一实施例中形成焊球凸块结构的示意图。
图6则显示在另一实施例中形成堆叠的焊球凸块结构的方法。
图7则显示由图6所示步骤所形成的堆叠的焊球凸块结构。
图8至图12则显示将上述银合金焊球凸块应用于倒装芯片封装的一些实施例。
图13则显示将银合金焊球凸块应用于卷带自动接合的一实施例。
上述附图中的附图标记说明如下：
102、104、106、108、110、112、114～步骤
200～银合金焊线
202～基板
204、804、904、818～焊垫
206～第一球状物
208～第一银合金焊球凸块
210、810、910～第二焊球凸块
802～第一芯片
808～第一银合金焊球凸块
816～基板
814～黏着剂
902～第二芯片
212、812、912～堆叠的焊球凸块结构
908～第一焊球凸块
具体实施方式
以下依本发明的不同特征举出数个不同的实施例。本发明中特定的组件及安排是为了简化，但本发明并不以这些实施例为限。举例而言，于第二元件上形成第一元件的描述可包括第一元件与第二元件直接接触的实施例，亦包括具有额外的元件形成在第一元件与第二元件之间、使得第一元件与第二元件并未直接接触的实施例。此外，为简明起见，本发明在不同例子中以重复的元件符号及/或字母表示，但不代表所述各实施例及/或结构间具有特定的关系。
图1显示在本发明一实施例中形成焊球凸块结构的流程图。在步骤102中，提供银合金焊线。在步骤104中，烧熔银合金焊线的一端以形成第一球状物。在步骤106中，将第一球状物接合至基板上。在步骤108中，截断银合金焊线，使得第一球状物留在基板上以形成第一银合金焊球凸块。
图2至图5显示在本发明一实施例中形成焊球凸块结构的示意图。参照图1、图2，在步骤102中，提供银合金焊线200。此外，可预备基板202及焊垫204，并将银合金焊线200引到基板202的焊垫204上方。在此实施例中，银合金焊线200中银:金:钯的重量比=60～99.98：0.01～30：0.01～10，其中银为此银合金焊线200的主要成份(>50wt%)。银合金焊线200的线径例如可介于10至50毫米，但也可根据需要使用具有其他适合的线径的银合金焊线。基板202可为芯片或晶圆。焊垫204例如为铝焊垫、镍焊垫、铜焊垫、金焊垫、或其他常用的焊垫材料。
参照图1、图3，在步骤104中，烧熔银合金焊线200的一端以形成第一球状物206。在此实施例中，以放电结球(electric flame off；EFO)方式烧熔银合金焊线200以产生球状物206。然而，在其他实施例中，也可利用在打线接合工艺中的其他结球方法形成球状物206。
参照图1、图4，在步骤106中，将第一球状物206接合至基板202上。在此实施例中，以热压(hot pressing)或超音波热压(ultrasonic hot pressing)将第一球状物206接合至基板202上的焊垫204上。然而，在其他实施例中，也可利用其他方法接合第一球状物206及基板202。
参照图1、图5，在步骤108中，截断银合金焊线200，使得第一球状物206留在基板202上以形成第一银合金焊球凸块208。在此实施例中，焊球凸块结构包括：基板202；以及第一银合金焊球凸块208，设置于基板202的焊垫204上。银合金焊球凸块208的直径可介于20μm至100μm。
在一实施例中，第一银合金焊球凸块208中的银:金:钯的重量比=60～99.98：0.01～30：0.01～10，且银为第一银合金焊球凸块208中的主要成分(>50wt%)。发明人发现，若仅以纯银制造焊球凸块，会有材质太软及易于氧化的问题。然而，若在银合金焊球凸块中加入适量的金，则可提高焊球凸块的抗氧化性及强度。此外，加入适量的钯则除了可提高焊球凸块的抗氧化性及强度之外，还可抑制介金属的成长，并抑制银的电迁移现象。然而，若金的含量太高时，则会造成介金属含量过高，导致接点变脆，且也会提高制造成本。另外，若钯的含量过高时，则会造成焊球凸块变的太硬太脆，而成为其应用上的限制。
应注意的是，上述焊球凸块结构虽以银为主要成分并包含特定比例的金及钯，然而本发明的范畴并非以此为限。在其他例子中，焊球凸块结构可更包括其他金属、非金属元素、或其他不可避免的杂质成分。应注意的是，其他元素的添加需视应用上的需要调整，以避免影响焊球凸块结构的性质。
相较于其他金属焊球凸块(如：金焊球凸块或铜焊球凸块)，本发明的银合金焊球凸块不含铅(较环保)、成本较低，且后续应用范围更广，稳定性更佳。以金焊球凸块为例，当其后续以软焊(soldering)接进行组装(assembly)时，焊球凸块中的金会大量的熔入焊锡中而形成AuSn4介金属化合物(intermetallic compounds)，在电子产品使用或可靠度试验时，也会在金焊球凸块与铝垫的介面形成大量脆性AuxAly介金属化合物，并产生克肯达尔(Kirkendall)孔洞，使得接点断裂或电阻上升。因此，一般而言，金焊球凸块必须以导电胶进行组装。然而导电胶的导电性较差。而金焊球凸块与铝垫介面形成大量脆性AuxAly介金属化合物的问题仍无法避免，使得金焊球凸块封装产品的可靠度不佳。
另外，若使用铜焊球凸块进行接合，则由于其几乎不会有介金属形成，故难以判断接合是否完全，其封装产品常无法通过残金试验(metal residue test)。并且由于铜非常容易氧化及腐蚀，故会造成电子产品的可靠度亦偏低。此外，由于铜的硬度大，故在将铜线打上芯片时常造成芯片破裂，因此也难以以上述方法在芯片上形成铜焊球凸块。
相反的，本发明所述以银为主的银合金焊球凸块材质较软，故在将球状物打至芯片上时不会将芯片打破。此外，银合金焊球凸块在接合时的介金属含量不会太高，故不会造成接点的脆化。然而，由于其仍会产生少量的介金属，故仍可清楚判断是否有成功接合，其封装产品均可通过残金试验(metal residue test)。此外，上述银合金焊球凸块可根据需要以焊锡、导电胶、热压的方式进行组装，并不限于特定工艺方法。
此外，上述银合金焊球凸块可形成于芯片(chip)上，或可直接形成于晶圆(wafer)上，进行特殊的晶圆层级封装(wafer level package)。直接将焊球凸块形成于晶圆上的优点在于可先一次形成大量的焊球凸块，而后再对晶圆进行切割，故可降低工艺成本。然而，由于晶圆层级封装必需在同一晶圆上一次制作数万个焊球凸块，如果采用上述焊球凸块形成技术，其整片晶圆在数万个焊球凸块逐一热压接合过程必需持续加热。亦即，当数万个焊球凸块逐一与芯片接合至最后一个焊球凸块时，初期完成的焊球凸块已经随着晶圆被加热数十分钟。因此，若以金为焊球凸块的主要成分时，由于金的介金属形成速度快，这些较早形成而不断被加热的金焊球凸块会因此形成大量的介金属，使得初期形成的金焊球凸块因介面脆裂而损坏，造成其强度变弱。因此，在形成金焊球凸块时，一般只能直接形成于芯片上，而无法直接形成晶圆上而后再进行切割。另外，如果采用铜为焊球凸块的主要成分，则除了介面介金属层不足引发接合不完全的疑虑，以及铜焊球凸块太硬造成晶圆破裂，更严重的是初期完成的铜焊球凸块会因长时间随着晶圆在空气中加热而发生的高温氧化的现象。
相反的，本发明的银合金焊球凸块的介金属成长厚度适中且成长非常缓慢。因此，可明确看出焊球凸块的接合情形，且当银合金焊球凸块直接形成于晶圆上时，初期形成的银合金焊球凸块即使随着整片晶圆经过一段时间的加热，也不会产生大量的介金属，故仍可维持焊球凸块的强度。
图6则显示在另一实施例中形成堆叠的焊球凸块结构的方法。图7则显示由图6所示步骤所形成的堆叠的焊球凸块结构。参照图6，在图1的步骤108之后，进行步骤110、步骤112及步骤114。在步骤110中，再次烧熔银合金焊线200的一端以形成第二球状物。在步骤112中，将第二球状物接合至第一银合金焊球凸块208上。在步骤114中，截断银合金焊线200，而形成留在第一银合金焊球凸块208上的第二焊球凸块210，并进一步形成堆叠的焊球凸块结构212，如图7所示。
参照图7，焊球凸块结构包括：基板202；第一银合金焊球凸块208，设置于基板202的焊垫204上；以及第二焊球凸块210位于第一银合金焊球凸块208上。其中，第一银合金焊球凸块208及第二焊球凸块210的组成皆为银:金:钯的重量比=60～99.98：0.01～30：0.01～10，且银皆为焊球凸块的主要成分(>50wt%)。应注意的是，上述焊球凸块结构虽以银为主要成分并包含特定比例的金及钯，然而本发明的范畴并非以此为限。在其他例子中，焊球凸块结构可更包括其他金属、非金属元素、或其他不可避免的杂质成分。应注意的是，其他元素的添加需视应用上的需要调整，以避免影响焊球凸块结构的性质。在另一实施例中，第二焊球凸块也可具有与第一银合金焊球凸块不同的金属成分比例。
上述由第一银合金焊球凸块208及第二焊球凸块210所组成堆叠的焊球凸块结构212的高度较高，后续组装完成的电子封装产品接点可以承受较大变形量，故可具有较高的可靠度。此外，由于第一银合金焊球凸块208及第二焊球凸块210可由相同的银合金焊线200所形成，可在同一生产线机台直接完成，故工艺简单，可降低成本。
图8至图12则显示将上述银合金焊球凸块应用于倒装芯片封装的一些实施例。在下述实施例中，与之前的实施例相同的组件将不再详细叙述。在图8所示实施例中，将位于第一芯片802的焊垫804上的第一银合金焊球凸块808翻转放置在基板816的焊垫818上，再将第一银合金焊球凸块808与基板816以黏着剂814接合，以完成第一种倒装芯片组装。在此实施例中，第一银合金焊球凸块808中的银:金:钯的重量比=60～99.98：0.01～30：0.01～10，且银为第一银合金焊球凸块208的主要成分(>50wt%)。焊垫804、焊垫818例如为铝焊垫、镍焊垫、铜焊垫、金焊垫、或其他常用的焊垫材料。黏着剂814例如为导电胶或焊锡。基板816例如为印刷电路板或另一片芯片。
在图9所示实施例中，首先，在第二芯片902上的焊垫904上形成银合金焊球凸块908。而后，将第一芯片802的第一银合金焊球凸块808与第二芯片902的银合金焊球凸块908以黏着剂814接合，以完成第二种倒装芯片组装。
在图10所示实施例中，在第一芯片802的焊垫804上形成具有第一银合金焊球凸块808及第二焊球凸块810的堆叠的焊球凸块结构812。将第一芯片802翻转放置基板816上，再将堆叠的焊球凸块结构812与基板816上的焊垫818以黏着剂814接合，以完成第三种倒装芯片组装。
在图11所示实施例中，首先，在第二芯片902上的焊垫904上形成银合金焊球凸块908。而后，将第一芯片802(其上具有第一银合金焊球凸块808及第二焊球凸块810的堆叠的焊球凸块结构812)翻转放置在第二芯片902上。接着，将第一芯片802的堆叠的焊球凸块结构812与第二芯片902上的银合金焊球凸块908以黏着剂814接合，以完成第四种倒装芯片组装。
在图12所示实施例中，首先，在第二芯片902上的焊垫904上形成具有第一焊球凸块908及第二焊球凸块910的堆叠的焊球凸块结构912。而后，将第一芯片802(其上具有第一银合金焊球凸块808及第二焊球凸块810的堆叠的焊球凸块结构812)翻转放置在第二芯片902上。接着，将第一芯片802的堆叠的焊球凸块结构812与第二芯片902上的堆叠的焊球凸块结构912以黏着剂814接合，以完成第五种倒装芯片组装。
图13则显示将银合金焊球凸块应用于卷带自动接合的一实施例。参照图13，将基板816以卷带自动接合于第一芯片802的焊垫804上的第一银合金焊球凸块808。其中，第一银合金焊球凸块808以热压的方式与卷带自动接合基板816上的焊垫818接合。
综上所述，在本发明的实施例中提供一种创新的银合金焊球凸块及其制造与组装方法。其中，银合金焊球凸块与焊垫接合可形成足够的介金属层，确保其接合性。然而，其介金属化合物的成长极为缓慢，故不会导致接合介面脆化，因此有极高的可靠度。此外，本发明各实施例的银合金焊球凸块与各种电镀焊锡合金焊球凸块相较，无环境污染的顾虑，且其合金组成可以很精确控制，亦无焊锡合金焊球凸块的共平面度问题。再者，本发明的银合金焊球焊球凸块更可应用于晶圆层级封装(Wafer Level Package)。
【比较例1】
使用直径25.4μm的纯金线以电弧放电(arc discharge)将线头烧熔，利用表面张力自然形成圆球状，再以超音波热压焊线技术与硅芯片的铝垫接合，并将接合至芯片的铝垫上的金线截断，以完成金焊球凸块的制作，其工艺参数如表一所示；金焊球凸块尺寸如表二所示；接合强度则如表三所示。
【比较例2】
使用直径25.4μm的纯铜线以电弧放电(arc discharge)将线头烧熔，利用表面张力自然形成圆球状，再以超音波热压焊线技术与硅芯片的铝垫接合，并将接合至芯片的铝垫上的纯铜线截断，以完成铜焊球凸块的制作。
【实施例1】焊球凸块工艺
使用直径25.4μm的89wt%银-8wt%金-3wt%钯的银合金线以电弧放电(arcdischarge)将线头烧熔，利用表面张力自然形成圆球状，再以超音波热压焊线技术与硅芯片的铝垫接合，并将接合至芯片的铝垫上的银合金线截断，以完成银合金焊球凸块的制作，其工艺参数如表一所示；制作完成的银合金焊球凸块的尺寸如表二所示；接合强度则如表三所示。参照表二，虽然使用相同直径的原始焊线，银合金焊球凸块尺寸略小于金焊球焊球凸块。银合金焊球凸块较小的尺寸有利于高密度封装的微小间距需求。此外，将此实施例的芯片上的银合金焊球凸块与比较例1的金焊球凸块以DAGE4000接点强度测试机进行推力试验(如表三所示)，银合金焊球凸块的接合强度较金焊球凸块高21%。
表一银合金焊球凸块与金焊球凸块的工艺参数
表二银合金焊球凸块与金焊球凸块的尺寸
表三银合金焊球凸块与金焊球凸块的推力测试结果
银合金焊球凸块 金焊球凸块
样本数 30 30
极大值 32.22克 26.35克
极小值 27.12克 21.08克
平均值 29.42克 24.32克
【实施例2】可靠度测试
将实施例1的银合金焊球凸块、比较例1的金焊球凸块及比较例2的铜焊球凸块以96.5wt%锡-3wt%银-0.5wt%铜的焊锡与球格阵列构装(BGA)的双马来酰亚胺三嗪树脂(bismaleimide triazine resin；BT树脂)基板接合，再于基板植上焊锡球，完成倒装芯片/BGA高密度封装产品的组装。而后，将三种材质的焊球凸块组装产品进行冷热回圈试验(Temperature Cycling Test；TCT)、压力釜试验(Pressure Cooking Test；PCT)及高温贮存试验(High Temperature Storage；HTS)，以进行可靠度试验。
经实验发现，比较例1的金焊球凸块与铝垫介面产生的介金属层厚度高达2.1μm，故会造成接点的脆裂与产品失效。另外，比较例2的铜焊球凸块所形成的介金属层厚度只有0.2μm，难以确认其是否完全接合。而实施例1的银合金焊球凸块所产生的介金属层厚度大约0.6μm，可以确保介面接合效果，亦不致于造成介面脆裂。
此外，将上述组装产品进行冷热回圈试验500次，比较例1的金焊球凸块的介金属层厚度剧增到3.8μm，比较例2的铜焊球凸块组装产品经过3000次冷热回圈试验的介金属层厚度则仅成长至0.3μm，而实施例1的银合金焊球凸块组装产品经过3000次冷热回圈试验的介金属层厚度成长至1.0μm。
另外，在压力釜试验168小时后，比较例1的金焊球凸块组装产品的介金属层厚度成长至3.1μm；比较例2的铜焊球凸块组装产品的介金属层厚度仅成长至0.4μm；而实施例1的银合金焊球凸块组装产品的介金属层厚度则成长至0.9μm。
而在高温贮存试验500小时后，比较例1的金焊球凸块组装产品的介金属层厚度大幅成长至4.3μm，此时几乎将芯片上铝垫完全耗尽；比较例2的铜焊球凸块组装产品的介金属层厚度仅成长至0.7μm；而实施例1的银合金焊球凸块组装产品的介金属层厚度则成长至1.8μm。
综合上述各种可靠度试验可知比较例1的金焊球凸块组装产品的介金属化合物成长太快，会造成接合介面脆裂。相反的，比较例2的铜焊球凸块组装产品的介金属层成长太慢，其介面有接合不完全的疑虑。亦即，介金属层厚度过多或不足均会影响组装产品的可靠度。然而，实施例1的银合金焊球凸块组装产品的介金属层厚度均介于金焊球凸块与铜焊球凸块之间，既不会发生金焊球凸块的接合介面脆裂，也不会有铜焊球凸块接合不完全的疑虑，故在可靠度试验优于比较例1的金焊球凸块与比较例2的铜焊球凸块的组装产品。
【实施例3】晶圆级封装应用
在一6吋硅晶圆的铝垫上分别制作12000颗实施例1的银合金焊球凸块、比较例1的金焊球凸块与比较例2的铜焊球凸块，以进行晶圆层级封装应用的试验。
在完成硅晶圆上所有焊球凸块的制作后，观察焊球凸块的介金属厚度。实验结果显示，最先形成的金焊球凸块(比较例1)的介金属层厚度为1.8μm；最先形成的铜焊球凸块(比较例2)的介金属层厚度为与0.1μm；而最先形成的银合金焊球凸块(实施例1)的介金属层厚度为0.5μm。
此外，在晶圆上最初10个金焊球凸块与铜焊球凸块的介金属层平均厚度分别为3.2μm与0.4μm，而银合金焊球凸块的介金属层厚度为0.8μm。这些较早形成的金焊球凸块已有介面脆裂现象，而铜焊球凸块则不仅接合不佳，而且氧化极为严重，甚至芯片有破裂迹象。然而，实施例1的银合金焊球凸头未呈现这些问题。
另外，此晶圆层级封装采用比较例1的金焊球凸块与实施例1的银合金焊球凸块的良率均接近100%，而比较例2的铜焊球凸块的良率只有大约64%。
此外，完成的晶圆层级封装最初10个金焊球凸块的平均推球强度较最后10个降低约17%，铜焊球凸块更降低约37%，而银合金焊球凸块的最初与最后10个焊球凸块平均推球强度几乎维持不变。
【实施例4】卷带自动接合的应用
在集成电路芯片的铝垫上分别制作实施例1的银合金焊球凸块与比较例1的金焊球凸块，再利用热压头使焊球凸块与聚亚酰胺(PI)卷带基板上的铜箔电极接合。而后，将芯片上的银合金焊球凸块与金焊球凸块以DAGE4000接点强度测试机进行推力试验，结果如表四。如表四所示，银合金焊球凸块的接合强度较金焊球凸块高17%。
表四卷带自动接合银合金焊球凸块与金焊球凸块的推力测试结果
银合金焊球凸块 金焊球凸块
样本数 30 30
极大值 63.24克 54.56克
极小值 58.87克 50.44克
平均值 61.15克 52.45克
虽然本发明已以数个较佳实施例揭示如上，然其并非用以限定本发明，任何所属技术领域中普通技术人员，在不脱离本发明的精神和范围内，当可作任意的更动与润饰，因此本发明的保护范围当视所附的权利要求所界定的范围为准。

Claims (11)

1.一种焊球凸块结构，包括：
一基板；以及
一第一银合金焊球凸块，设置于该基板上，其中该第一银合金焊球凸块中银:金:钯的重量比＝89.99～97.99：0.01：2～10。
2.如权利要求1所述的焊球凸块结构，其中该基板包括一芯片或一晶圆。
3.如权利要求1所述的焊球凸块结构，其中该基板还包括一焊垫，且该第一银合金焊球凸块位于该焊垫上。
4.如权利要求1所述的焊球凸块结构，还包括一第二焊球凸块位于该第一银合金焊球凸块上。
5.如权利要求4所述的焊球凸块结构，其中该第二焊球凸块与该第一银合金焊球凸块的组成成分相同。
6.一种焊球凸块结构的形成方法，包括：
提供一银合金焊线；
烧熔该银合金焊线的一端以形成一第一球状物；
将该第一球状物接合至一基板上；以及
截断该银合金焊线，使得该第一球状物留在该基板上以形成一第一银合金焊球凸块，
其中该银合金焊线中银:金:钯的重量比＝89.99～97.99：0.01：2～10。
7.如权利要求6所述的焊球凸块结构的形成方法，其中该基板包括一芯片或一晶圆。
8.如权利要求6所述的焊球凸块结构的形成方法，其中该银合金焊线的线径介于10至50毫米。
9.如权利要求6所述的焊球凸块结构的形成方法，其中该第一球状物以热压接合或超音波热压接合至该基板上。
10.如权利要求6所述的焊球凸块结构的形成方法，其中该基板还包括一焊垫，且该第一球状物接合至该焊垫上。
11.如权利要求6所述的焊球凸块结构的形成方法，还包括：
再次烧熔该银合金焊线的一端以形成一第二球状物；
将该第二球状物接合至该第一银合金焊球凸块上；以及
截断该银合金焊线，使得该第二球状物留在该第一球状物上。
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KR101528030B1 (ko) 2015-06-10
US20140124920A1 (en) 2014-05-08
TWI395313B (zh) 2013-05-01
TW201312716A (zh) 2013-03-16
CN103811449A (zh) 2014-05-21
JP2014096571A (ja) 2014-05-22
DE102013107065A1 (de) 2014-05-08
KR20140059117A (ko) 2014-05-15
US9490147B2 (en) 2016-11-08

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