TWI815196B - 安裝基板及電路基板 - Google Patents

安裝基板及電路基板 Download PDF

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TWI815196B
TWI815196B TW110138530A TW110138530A TWI815196B TW I815196 B TWI815196 B TW I815196B TW 110138530 A TW110138530 A TW 110138530A TW 110138530 A TW110138530 A TW 110138530A TW I815196 B TWI815196 B TW I815196B
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dimension
resin layer
terminal
terminals
mounting substrate
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TW202224126A (zh
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水戸瀬智久
川畑賢一
谷口晋
関映子
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日商 Tdk 股份有限公司
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Abstract

本揭示之安裝基板係具備以下者:電子零件,其具有至少一對第1端子;及電路基板,其具有至少一對第2端子;且第1端子及第2端子藉由接合材接合,第1端子、第2端子及接合材藉由配置於形成在樹脂層之凹部內,而由樹脂層包圍周圍,於將第1端子、第2端子、及接合材之合計厚度設為尺寸h1之情形時,尺寸h1為1 μm以上且20 μm以下,於將第1端子之寬度設為尺寸d1、將樹脂層之凹部寬度設為尺寸d2之情形時,(尺寸d2-尺寸d1)之值為10 μm以下。

Description

安裝基板及電路基板
本揭示係關於一種安裝基板及電路基板。
電子零件大多經由焊料安裝於電路基板。於使用焊料將電子零件安裝於電路基板時,有時於回焊步驟中會形成焊料球,有因該焊料球導致電子零件之一對端子之間短路之問題發生。為了解決此種問題,揭示有一種於一對端子之間形成突起物之技術(專利文獻1)。 [先前技術文獻] [專利文獻]
專利文獻1:日本專利特開2006-286851號公報
[發明所欲解決之問題]
近年,隨著電子機器之小型化,用於電子機器之電子零件之小型化亦不斷發展,例如將如微型LED(Light Emitting Diode:發光二極體)般之20 μm左右之電子零件安裝於電路基板之安裝基板之需求不斷出現。但電子零件越小,必須使焊料越小,然焊料量之控制較難,有接合之焊料量存在不均之情形。因此,焊料尺寸顯現出不均,保持電子零件之力之平衡崩壞,對接合後之焊料施加應力而強度不足之情況增多。藉此,有因施加物理性之衝擊使得電子零件容易自電路基板剝落之問題。
本揭示之目的在於提供一種電子零件不易自電路基板剝離之安裝基板及電路基板。 [解決問題之技術手段]
本揭示之安裝基板係具備以下者:電子零件,其具有至少一對第1端子;及電路基板,其具有至少一對第2端子;且第1端子及第2端子藉由接合材接合,第1端子、第2端子及接合材藉由配置於形成在樹脂層之凹部內,而由樹脂層包圍周圍,於將第1端子、第2端子及接合材之合計厚度設為尺寸h1之情形時,尺寸h1為1 μm以上且20 μm以下,於將第1端子之寬度設為尺寸d1、將樹脂層之凹部寬度設為尺寸d2之情形時,(尺寸d2-尺寸d1)之值為10 μm以下。
於本揭示之安裝基板中,第1端子、第2端子及接合材藉由配置於形成在樹脂層之凹部內,而由樹脂層包圍周圍。藉此,可於接合部分之周圍設置樹脂層之衝擊緩衝構造。再者,藉由將第1端子、第2端子及接合材之合計厚度之尺寸h1設為1 μm以上且20 μm以下,可使接合部分不易彎折。又,藉由將(尺寸d2-尺寸d1)之值設為10 μm以下,於安裝基板受到物理性衝擊之情形時,可使電子零件不易自電路基板剝落。
亦可於接合材與樹脂層之間配置構成材。藉此,藉由由構成材支撐,可使電子零件更不易自電路基板剝離。
亦可於存在於一對第1端子之間之樹脂層、與電子零件之本體部之間,配置構成材。藉此,可由構成材保持電子零件之本體部,可提高強度。
構成材亦可與本體部接觸。於該情形時,可由構成材固定電子零件之本體部之下表面。因此,即使安裝基板受到物理性衝擊,亦不易對接合材施加力而電子產品不易自電路基板剝離。
存在於一對第1端子之間之樹脂層亦可與電子零件之本體部接觸。於該情形時,藉由使電子零件之本體部與樹脂層接觸而受支持,即使安裝基板受到物理性衝擊,亦不易對接合材施加力而電子零件不易自電路基板剝落。
亦可為,於將存在於一對第1端子之間之樹脂層之高度設為尺寸R1、將包圍電子零件之樹脂層之高度設為尺寸R2之情形時,尺寸R1小於尺寸R2。於該情形時,因成為如電子零件之本體部由周圍樹脂層包圍並支持之構成,故即使安裝基板受到物理性衝擊,亦不易對接合材施加力而電子零件不易自電路基板剝離。
凹部之內側面亦可具有錐形狀。基於樹脂層與基板之熱膨脹率差,施加熱衝擊時,會自樹脂層對接合材施加力,但藉由使凹部之內側具有錐形狀,來自電子零件側之樹脂層之力不易施加至接合材,於熱衝擊試驗中電子零件不易自電路基板剝離。
本揭示之電路基板係具有至少一對第2端子之電路基板,將接合材配置於第2端子上,第2端子及接合材配置於形成在樹脂層之凹部內,藉此由樹脂層包圍周圍,於將第2端子及接合材之合計厚度設為尺寸h2之情形時,尺寸h2為1 μm以上且20 μm以下,於將樹脂層之凹部寬度設為尺寸d2之情形時,尺寸d2為2 μm以上且30 μm以下。
根據本揭示之電路基板,於安裝電子零件時,可獲得發揮與上述相同作用/效果之安裝基板。
尺寸h2亦可大於樹脂層之厚度。於該情形時,因可於安裝電子零件時將第2端子壓入密接於接合材,故接合後之接合材與第2端子之間之空隙減少。因此,即使安裝基板受到衝擊,接合材亦不易彎折而可提高強度。 [發明之效果]
根據本揭示,可提供一種能使電子零件不易自電路基板剝離之安裝基板及電路基板。
參照圖1,對本揭示之實施形態之安裝基板1進行說明。圖1係顯示本揭示之實施形態之安裝基板1之概略剖視圖。如圖1所示,安裝基板1具備電子零件2與電路基板3。安裝基板1藉由將電子零件2經由接合材4安裝於電路基板3而構成。
電子零件2具備本體部6與一對端子7(第1端子)。本體部6係用以發揮作為電子零件2之功能之構件。端子7係形成於本體部6之主面之金屬製之部分。作為端子7之材料,採用Cu、Ti、Au、Ni、Sn、Bi、P、B、In、Ag、Zn、Pd、Mo、Pt、Cr、選自該等之至少兩者之合金等。電子零件2例如藉由微型LED構成。微型LED係根據來自電路基板3之輸入而發光之零件。
電路基板3具備基材8、樹脂層9、及一對端子10(第2端子)。基材8係電路基板3之平板狀之本體部。樹脂層9係形成於基材8之上表面之樹脂製之層。作為樹脂層9之材料,例如採用環氧樹脂、丙烯酸樹脂、酚醛樹脂、三聚氰胺樹脂、尿素樹脂、醇酸樹脂等。尤佳為,作為樹脂層9之材料採用環氧樹脂、丙烯酸樹脂。端子10係形成於基材8之主面的金屬製部分。作為端子10之材料,採用Ni、Cu、Ti、Cr、Al、Mo、Pt、Au、選自該等之至少兩者之合金等。
接合材4係將電子零件2之端子7與電路基板3之端子10接合之構件。接合材4可包含Sn,亦可由包含Sn之合金構成。但,接合材4並非限定於包含Sn者。接合材4亦可除了Sn之外,並包含使Sn低熔點化之元素的合金構成。作為使Sn低熔點化之元素,例如可例舉Bi等。接合材4作為焊料發揮功能。藉此,於基材8與本體部6之間,自基材8之上表面依序積層端子10、接合材4、及端子7。另,於該部位,於將端子10、接合材4及端子7積層後進行焊料接合。因此,形成端子10、接合材4及端子7各自之金屬熔融擴散之構造。此種焊料接合後之構造可為包含脆性之金屬間化合物(IMC(Intermetallic Compound))之構造。於存在脆性之構造即金屬間化合物之情形時,可靠性易下降。因此,將該焊料接合之構造以樹脂層9包圍之構造所產生之效果更為顯著。
於樹脂層9形成一對凹部11。凹部11由貫通樹脂層9之貫通孔構成。藉此,於凹部11之底側,基材8之上表面露出。於自電路基板3之厚度方向觀察時,凹部11呈矩形(參照圖2)。端子7、端子10、及接合材4配置於形成在樹脂層9之凹部11內,藉此由樹脂層9包圍周圍。於端子7、端子10、及接合材4與凹部11之四個內側面11a之間,形成些微間隙。
將樹脂層9中存在於一對端子7間之部分稱為第1部分9A,將包圍電子零件2之部分稱為第2部分9B。於本實施形態中,第1部分9A與第2部分9B距離基材8之高度相同。又,存在於一對端子7間之樹脂層9之第1部分9A與電子零件2之本體部6接觸。具體而言,樹脂層9之第1部分9A之上表面與電子零件之本體部6之下表面接觸。
接著,參照圖1及圖2,對安裝基板1之各要素之尺寸關係進行說明。圖2係顯示自上側觀察安裝基板1之情形時,凹部11與端子7之位置關係之概略俯視圖。於圖2中,省略樹脂層9、及電子零件2之端子7以外之構成要素。
以端子7、端子10、及接合材4之合計厚度為尺寸h1而進行說明。此時,尺寸h1較佳為1 μm以上,更佳為4 μm以上。又,尺寸h1較佳為20 μm以下,更佳為15 μm以下,進而更佳為10 μm以下。於一個安裝基板1中,設置有複數組「端子7、端子10、接合材4」之組合,但亦有各組合之尺寸h1互不相同之情形。於該情形時,關於高度測定之結果最高之組合之尺寸h1,較佳為滿足上述條件。但,於安裝基板1中,至少存在1個滿足上述條件之尺寸h1即可。另,尺寸h1可藉由垂直切斷安裝基板1,對剖面進行SEM(Scanning Electron Microscope:掃描電子顯微鏡)觀察等來測定。
於將端子7之寬度設為尺寸d1,將樹脂層9之凹部11之寬度設為尺寸d2之情形時,(尺寸d2-尺寸d1)較佳為10 μm以下,較佳為6 μm以下,更佳為2 μm以下。另,(尺寸d2-尺寸d1)之下限值無特別限定,於不對製造產生影響之情形時,亦可將0 μm設為下限值。
尺寸d1較佳為2 μm以上,更佳為5 μm以上。尺寸d1較佳為20 μm以下,更佳為10 μm以下。尺寸d2較佳為2 μm以上,更佳為7 μm以上。尺寸d2較佳為30 μm以下,更佳為15 μm以下。一側之凹部11與另一側之凹部11之間之距離較佳為4 μm以上,20 μm以下。另,尺寸d1及尺寸d2可與上表面平行地切出安裝基板1,並藉由SEM觀察而測定。
於一個安裝基板1中設置有複數組「端子7、凹部11」之組合,但亦有各組合之(尺寸d2-尺寸d1)互不相同之情形。於該情形時,於安裝基板1中,至少存在1個滿足上述條件之(尺寸d1-尺寸d2)即可。亦可於樹脂層9之凹部11之角部、及端子7、10之角部,形成角R。角R例如可設定為1 μm、5 μm、10 μm等。
如圖2所示,於端子7係正方形之情形時,任一邊之尺寸相當於尺寸d1。於端子7係長方形之情形時,短邊之尺寸相當於尺寸d1。於端子7係圓形之情形時,直徑相當於尺寸d1。於端子7係橢圓形之情形時,短徑相當於尺寸d1。於端子7係五角形以上之多角形之情形時,測定各頂點與和該頂點面相對之邊之距離,將最短之距離設為尺寸d1。另,與凹部11之形狀相應之尺寸d2之決定方法亦與尺寸d1相同。
如圖1所示,將存在於一對端子7間之樹脂層9之第1部分9A之高度設為尺寸R1,將包圍電子零件2之樹脂層9之第2部分9B之高度設為尺寸R2。於該情形時,尺寸R1較佳為2 μm以上,更佳為4 μm以上。尺寸R1較佳為20 μm以下,更佳為10 μm以下。尺寸R2較佳為3 μm以上,更佳為4 μm以上。尺寸R2較佳為30 μm以下,更佳為10 μm以下。
於圖1所示之例中,尺寸R1與尺寸R2設定為相同值。於該情形時,可易於形成樹脂層9。但,尺寸R1與尺寸R2亦可設定為互不相同之值。如圖6所示,尺寸R1亦可設定為小於尺寸R2之值。於該情形時,將第2部分9B之上表面配置於高於電子零件2之本體部6之下表面之位置即可。
接著,對安裝基板1之製造方法、及製造流程中電路基板3之構成進行說明。
首先,準備如圖3所示之電路基板3。於該狀態下,成為將接合材4配置於端子10上之狀態。該接合材4係與電子零件2接合之前階段之狀態,故至少厚於圖1之安裝基板1之狀態之接合材4。該接合材4亦可為包含低溫焊料之Sn之金屬,若其整體組成為低熔點,則亦可為任意之細微構造。例如,於電路基板3流通之階段,接合材4亦可具有積層構造,該積層構造具有Sn層與Bi等其他金屬層。或,亦可以在預先加熱下,Sn與其他金屬以合金之狀態,於電路基板3流通。
於該狀態下,藉由端子10及接合材4配置於形成在樹脂層9之凹部11內,而由樹脂層9包圍周圍。於將端子10及接合材4之合計厚度設為尺寸h2之情形時,尺寸h2較佳為1 μm以上,更佳為3 μm以上。尺寸h2較佳為20 μm以下,更佳為10 μm以下。
對電路基板3載置零件2。此時,於一對接合材4上,分別載置電子零件2之一對端子7。藉由將該狀態之電路基板3及電子零件2加熱而進行焊接。作為加熱方式,可為放入爐等加熱之回焊方式、一面壓接電子零件2一面加熱之熱壓接方式、藉由照射光而加熱之光加熱方式之任一者,亦可將該等組合。藉由以上,於電路基板3安裝電子零件2,安裝基板1完成。
對本實施形態之安裝基板1及電路基板3之作用/效果進行說明。
於安裝基板1中,藉由端子7、端子10、及接合材4配置於形成在樹脂層9之凹部11內,而由樹脂層9包圍周圍。藉此,可於接合部分之周圍設置樹脂層9之衝擊緩衝構造。再者,藉由將端子7、端子10、及接合材4之合計厚度之尺寸h1設為1 μm以上且20 μm以下,可使接合部分不易彎折。又,藉由將(尺寸d2-尺寸d1)之值設為10 μm以下,於安裝基板1受到物理性衝擊之情形時,可使電子零件2不易自電路基板3剝離。
存在於一對端子7間之樹脂層9之第1部分9A亦可與電子零件2之本體部6接觸。於該情形時,藉由使電子零件2之本體部6之下表面與樹脂層9之第1部分9A接觸而受支持,即使安裝基板1受到物理性衝擊,亦不易對接合材4施加力,電子零件2不易自電路基板3剝離。
於將存在於一對端子7間之樹脂層9之第1部分9A之高度設為尺寸R1,將包圍電子零件2之樹脂層9之第2部分9B之高度設為尺寸R2之情形時,尺寸R1亦可小於尺寸R2。於該情形時,因成為如電子零件2之本體部6由周圍之樹脂層9之第2部分9B包圍而受支持之構成,故即使安裝基板1受到物理性衝擊,亦不易對接合材4施加力,電子零件2不易自電路基板3剝離。
電路基板3係具有至少一對之端子10之電路基板3,且將接合材4配置於端子10上,端子10及接合材4配置於形成在樹脂層9之凹部11內,藉此,由樹脂層9包圍周圍,於將端子10、及接合材4之合計厚度設為尺寸h2之情形時,尺寸h2為1 μm以上且20 μm以下,於將樹脂層9之凹部11之寬度設為尺寸d2之情形時,尺寸d2係2 μm以上且30 μm以下。
根據本實施形態之電路基板3,於安裝電子零件2時,可獲得發揮與上述相同之作用/效果之安裝基板1。
本揭示並非限定於上述實施形態者。
例如,如圖4所示,亦可於接合材4與樹脂層9之間配置構成材20。藉此,藉由由構成材20支撐,電子零件2更不易自電路基板3剝離。
又,如圖5所示,亦可於存在於一對端子7間之樹脂層9之第1部分9A與電子零件2之本體部6之間,配置構成材20。藉此,可由構成材20保持電子零件2之本體部6,可提高強度。
再者,如圖5所示,構成材20亦可與本體部6接觸。於該情形時,可由構成材20固定電子零件2之本體部6之下表面。因此,即使安裝基板1受到物理性衝擊,亦不易對接合材4施加力,電子零件2不易自電路基板3剝離。
又,如圖7所示,凹部11之內側面11a亦可具有如電子零件2側變寬之錐形狀。基於樹脂層9與基材8之熱膨脹率之差,施加熱衝擊時,會自樹脂層9對接合材4施加力,但藉由凹部11之內側面11a具有錐形狀,來自電子零件2側之樹脂層之力不易施加至接合材4,於熱衝擊試驗中,電子零件2不易自電路基板3剝離。另,於定義凹部11之寬度尺寸d2之情形時,將凹部11之上端(即樹脂層9之上表面之位置)之寬度尺寸設為尺寸d2。即,由凹部11中寬度尺寸最大之部位決定尺寸d2。
又,電路基板3中接合材4之高度尺寸h2亦可高於樹脂層9之高度尺寸R2(例如參照圖3)。藉由尺寸h2高於尺寸R2,於安裝電子零件2時,可將端子7壓入密接於接合材4,故接合後之接合材4與端子7之間之空隙減少。因此,即使安裝基板1受到物理性衝擊,接合材4亦不易彎折,而可提高強度。
[實施例] 對本揭示之安裝基板之實施例進行說明。另,本揭示並非限定於以下之實施例者。
首先,以如下之製造方法製作出實施例1~11、及比較例1、2之安裝基板。首先,準備形成有端子10之基材8。作為基材8,採用玻璃環氧基板。作為端子10,採用被覆有Ni膜之Cu端子。於基材8上,形成有100對端子10。接著,於端子10之上,作為接合材4,將成對之Bi/Sn積層焊墊形成為期望之厚度。於基材8上,將成對之接合材4形成於100個部位。
接著,於基材8上,以包圍端子10及接合材4之方式形成樹脂層9。作為該樹脂層9,採用環氧樹脂。藉此,可獲得如圖3所示之電路基板3。接著,對該電路基板3載置LED晶片作為電子零件2。對電路基板3安裝100個LED晶片。該LED晶片具有Au端子作為端子7。接著,將該狀態之安裝基板1以150℃~190℃進行回焊。藉此,將電路基板3及電子零件2接合。圖8之表中顯示實施例1~11及比較例1、2之尺寸、及有無構成材。
對如上所述之實施例1~11、及比較例1、2之安裝基板,進行如下之試驗。使製得之安裝基板自30 cm之高度自由落下10次。接著,調查試驗後殘餘之LED晶片之個數相對於試驗前之安裝基板整體之LED晶片之個數的比例,作為「LED殘存率」。調查殘存之LED晶片中會發光之LED晶片之個數比例,作為「殘存LED之發光率」。另,將殘存LED之發光率為50%以上設為合格(OK)。又,調查發光之LED晶片之個數相對於試驗前之LED晶片之個數的比例,作為「試驗後合格比例」。此時之試驗結果顯示於圖8之表。
首先,比較例1可確認到,因尺寸h1過長,故接合部容易因衝擊而彎折,且不發光之LED晶片增多。比較例2可確認到,因(尺寸d2-尺寸d1)過寬,故無法在試驗之衝擊下保護LED晶片,且容易自電路基板取出LED晶片。與此相比,實施例1~11確認到,殘存之LED晶片較多,且殘存之LED晶片亦可以高比例發光。
根據實施例1理解為,因尺寸h1較低,對於要形成之接合部,焊料量不均增大,接合強度出現不均,出現若干個焊料接合部無法承受試驗之部位,發光率略微降低。根據實施例2,3理解為,藉由尺寸h1為適當高度,(尺寸d2-尺寸d1)減小,可保護接合部,可提高試驗後合格比例。根據實施例4理解為,藉由與實施例2,3相比尺寸h1更高,接合部稍微細化,可承受試驗之LED晶片減少若干個。根據實施例5理解為,藉由與實施例4相比尺寸h1更高,接合部稍微細化,可承受試驗之LED晶片減少若干個。
根據實施例6理解為,藉由(尺寸d2-尺寸d1)減小,可保護接合部,可提高試驗後合格比例。根據實施例7,8,9理解為,雖(尺寸d2-尺寸d1)相對於實施例6變大,但因存在多個與凹部之壁接觸之接合部,其等於試驗中受到之衝擊由凹部之壁抑制,故稍微抑制發光率之減少。根據實施例10理解為,(尺寸d2-尺寸d1)與實施例9同等,但因尺寸h1較高,接合部細長化,容易因衝擊而彎折,故試驗後合格比例稍微降低。根據實施例11理解為,於任一項目中皆為良好之結果。
1:安裝基板 2:電子零件 3:電路基板 4:接合材 6:本體部 7:端子(第1端子) 8:基材 9:樹脂層 9A:第1部分 9B:第2部分 10:端子(第2端子) 11:凹部 11a:內側面 20:構成材 d1:尺寸 d2:尺寸 h1:尺寸 h2:尺寸 R1:尺寸 R2:尺寸
圖1係顯示本揭示之實施形態之安裝基板之概略剖視圖。 圖2係顯示於自上側觀察安裝基板之情形時,凹部與端子之位置關係之概略俯視圖。 圖3係顯示本揭示之實施形態之電路基板之概略剖視圖。 圖4係顯示變化例之安裝基板之概略剖視圖。 圖5係顯示變化例之安裝基板之概略剖視圖。 圖6係顯示變化例之安裝基板之概略剖視圖。 圖7係顯示變化例之安裝基板之概略剖視圖。 圖8係顯示實施例及比較例之條件、及試驗結果之表。
1:安裝基板
2:電子零件
3:電路基板
4:接合材
6:本體部
7:端子(第1端子)
8:基材
9:樹脂層
9A:第1部分
9B:第2部分
10:端子(第2端子)
11:凹部
11a:內側面
d1:尺寸
d2:尺寸
h1:尺寸
R1:尺寸
R2:尺寸

Claims (13)

  1. 一種安裝基板,其係具備以下者:電子零件,其具有至少一對第1端子;及電路基板,其具有至少一對第2端子;且上述第1端子及上述第2端子藉由接合材接合,上述第1端子、上述第2端子及上述接合材藉由配置於形成在樹脂層之凹部內,而由上述樹脂層包圍周圍,於將上述第1端子、上述第2端子及上述接合材之合計厚度設為尺寸h1之情形時,尺寸h1為1μm以上且20μm以下,於將上述第1端子之寬度設為尺寸d1、將上述樹脂層之上述凹部之寬度設為尺寸d2之情形時,(尺寸d2-尺寸d1)之值為10μm以下。
  2. 如請求項1之安裝基板,其中於上述接合材與上述樹脂層之間配置構成材。
  3. 如請求項1之安裝基板,其中於存在於一對上述第1端子之間之上述樹脂層、與上述電子零件之本體部之間,配置構成材。
  4. 如請求項2之安裝基板,其中於存在於一對上述第1端子之間之上述樹脂層、與上述電子零件之本體部之間,配置構成材。
  5. 如請求項3之安裝基板,其中上述構成材與上述本體部接觸。
  6. 如請求項4之安裝基板,其中上述構成材與上述本體部接觸。
  7. 如請求項1之安裝基板,其中存在於一對上述第1端子之間之上述樹脂層與上述電子零件之本體部接觸。
  8. 如請求項2之安裝基板,其中存在於一對上述第1端子之間之上述樹脂層與上述電子零件之本體部接觸。
  9. 如請求項1至8中任一項之安裝基板,其中於將存在於一對上述第1端子之間之上述樹脂層之高度設為尺寸R1,將包圍上述電子零件之上述樹脂層之高設為尺寸R2之情形時,尺寸R1小於尺寸R2。
  10. 如請求項1至8中任一項之安裝基板,其中上述凹部之內側面具有錐形狀。
  11. 如請求項9之安裝基板,其中上述凹部之內側面具有錐形狀。
  12. 一種電路基板,其係具有至少一對第2端子者,且將接合材配置於上述第2端子上,上述第2端子及上述接合材藉由配置於形成在樹脂層之凹部內,而由上述樹脂層包圍周圍,於將上述第2端子及上述接合材之合計厚度設為尺寸h2之情形時,尺寸h2為1μm以上且20μm以下, 於將上述樹脂層之上述凹部之寬度設為尺寸d2之情形時,尺寸d2為2μm以上且30μm以下。
  13. 如請求項12之電路基板,其中尺寸h2大於上述樹脂層之厚度。
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JP2017098319A (ja) * 2015-11-19 2017-06-01 イビデン株式会社 プリント配線板、プリント配線板の製造方法および半導体装置
US20190164879A1 (en) * 2017-11-29 2019-05-30 Shinko Electric Industries Co., Ltd. Wiring substrate and semiconductor device
TW202025873A (zh) * 2018-09-14 2020-07-01 日商日立化成股份有限公司 電子零件及電子零件的製造方法

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JPS62291086A (ja) * 1986-06-10 1987-12-17 株式会社東芝 配線回路基板
JP3173423B2 (ja) * 1997-05-02 2001-06-04 日本電気株式会社 プリント配線板
JP3646500B2 (ja) * 1998-01-20 2005-05-11 株式会社村田製作所 電子回路装置
JP4396563B2 (ja) 2005-03-31 2010-01-13 エプソンイメージングデバイス株式会社 電気光学装置の製造方法

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JP2017098319A (ja) * 2015-11-19 2017-06-01 イビデン株式会社 プリント配線板、プリント配線板の製造方法および半導体装置
US20190164879A1 (en) * 2017-11-29 2019-05-30 Shinko Electric Industries Co., Ltd. Wiring substrate and semiconductor device
TW202025873A (zh) * 2018-09-14 2020-07-01 日商日立化成股份有限公司 電子零件及電子零件的製造方法

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