TW201312716A - 銲球凸塊結構及其形成方法 - Google Patents

銲球凸塊結構及其形成方法 Download PDF

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Publication number
TW201312716A
TW201312716A TW101141253A TW101141253A TW201312716A TW 201312716 A TW201312716 A TW 201312716A TW 101141253 A TW101141253 A TW 101141253A TW 101141253 A TW101141253 A TW 101141253A TW 201312716 A TW201312716 A TW 201312716A
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Taiwan
Prior art keywords
solder ball
silver alloy
solder
bump
bumps
Prior art date
Application number
TW101141253A
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English (en)
Other versions
TWI395313B (zh
Inventor
Tung-Han Chuang
Hsing-Hua Tsai
Jun-Der Lee
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Wire technology co ltd
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Publication date
Application filed by Wire technology co ltd filed Critical Wire technology co ltd
Priority to TW101141253A priority Critical patent/TWI395313B/zh
Priority to US13/762,132 priority patent/US9490147B2/en
Publication of TW201312716A publication Critical patent/TW201312716A/zh
Application granted granted Critical
Publication of TWI395313B publication Critical patent/TWI395313B/zh
Priority to DE102013107065.5A priority patent/DE102013107065A1/de
Priority to CN201310308953.XA priority patent/CN103811449B/zh
Priority to KR1020130092982A priority patent/KR101528030B1/ko
Priority to JP2013191912A priority patent/JP6088950B2/ja

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
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Abstract

本發明實施例提供一種銲球凸塊結構及其形成方法。銲球凸塊結構包括基板；以及第一銀合金銲球凸塊，設置於該基板上，其中第一銀合金銲球凸塊中銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10。

Description

銲球凸塊結構及其形成方法
本發明係有關於一種銲球凸塊結構及其形成方法，且特別是有關於一種銀合金銲球凸塊結構及其形成方法。
積體電路(IC)晶片對外連線(Interconnection)的方法包括：打線接合(Wire Bonding)、捲帶自動接合(Tape Automated Bonding)及覆晶接合(Flip Chip Bonding)，其中捲帶自動接合與覆晶接合均使用導電銲球凸塊作為晶片與基板之聯結接點，亦均屬於高密度封裝之連線技術。
覆晶接合具有接點數高、接點間距小、封裝面積小、高頻性能佳、可靠度高以及耐電磁波干擾等優點，已普遍採用於積體電路及發光二極體(LED)等電子產品封裝製程中。
覆晶接合最重要的關鍵技術在於凸塊(Bump)的製作及組裝。覆晶凸塊材料大多使用銲錫合金，例如：錫-37鉛、錫-9鋅、錫-0.7銅、錫-3.5銀、錫-51銦、錫-58鉍、錫-3銀-0.5銅、錫-9鋅-3鉍等各種合金組成。
銲錫凸塊(Solder Bump)的製作方法主要可分為電鍍(Electroplating)及錫膏鋼版印刷(Stencil Printing)兩種。電鍍法除了環保問題，且難以形成特定的合金組成。此外，在形成無鉛銲錫時，很難找到適當鍍液配方與電鍍製程參數。例如，欲形成凸塊如錫-3.5銀、錫-0.7銅及錫-3銀-0.5銅時，其合金組成很難穩定控制；欲形成銲球凸塊如錫-51 銦、錫-58鉍及錫-9鋅-3鉍時，則難以找到理想鍍液。
因此，近年來大部分封裝廠針對覆晶組裝銲球凸塊的製作均逐漸以錫膏(solder paste)鋼版印刷(Stencil Printing)為主。然而，覆晶錫膏的關鍵材料在於錫粉(tin powder)。一般而言，在表面實裝(Surface Mount Technology；SMT)所使用之錫粉粒徑大約為30μm至50μm，這樣的尺寸在製造上較為容易。然而，由於覆晶凸塊的尺寸在120μm以下，其錫膏所使用錫粉粒徑必須大約在10μm以下，故其製作與粒徑篩選困難度均相當高。此外，當覆晶銲球凸塊尺寸減小至100μm以下甚至達到50μm時，即使使用尺寸在10μm以下的錫粉，其單顆銲錫凸塊仍只有少數幾個錫粉分佈其中，故於迴銲(resolder)後將造成很嚴重的共平面度(Coplanarity)問題。另外，以錫膏製作覆晶凸塊的問題還包括助銲劑(flux)迴銲後會留下空孔，以及在接點間距小至100μm以下時，錫膏鋼版印刷不良率大增等問題。
另一方面，捲帶自動接合方法則為另一種在高密度封裝的連線技術。捲帶自動接合具有高接點數、封裝薄形化與輕量化、接點強度高、電性與熱性佳、製程可自動化及可先行測試等優點，特別適用在一般要求輕薄及高密度之消費性電子產品。導電凸塊的製作亦是捲帶自動接合的關鍵技術。然而，目前所使用的金銲球凸塊(Gold Stud Bump)不僅有材料成本高的缺點，且很容易與晶片的鋁墊形成大量脆性介金屬化合物及克肯達爾(Kirkendall)孔洞，不利於電子產品的可靠度。
本發明一實施例提供一種銲球凸塊結構，包括：一基板；以及一第一銀合金銲球凸塊，設置於該基板上，其中該第一銀合金銲球凸塊中銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10。
本發明另一實施例提供一種銲球凸塊結構的形成方法，包括：提供一銀合金銲線；燒熔該銀合金銲線的一端以形成一第一球狀物；將該第一球狀物接合至一基板上；以及截斷該銀合金銲線，使得該第一球狀物留在該基板上以形成一第一銀合金銲球凸塊，其中該銀合金銲線中銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
以下依本發明之不同特徵舉出數個不同的實施例。本發明中特定的元件及安排係為了簡化，但本發明並不以這些實施例為限。舉例而言，於第二元件上形成第一元件的描述可包括第一元件與第二元件直接接觸的實施例，亦包括具有額外的元件形成在第一元件與第二元件之間、使得第一元件與第二元件並未直接接觸的實施例。此外，為簡明起見，本發明在不同例子中以重複的元件符號及/或字母表示，但不代表所述各實施例及/或結構間具有特定的關係。
第1圖顯示在本發明一實施例中形成銲球凸塊結構的流程圖。在步驟102中，提供銀合金銲線。在步驟104中，燒熔銀合金銲線的一端以形成第一球狀物。在步驟106中，將第一球狀物接合至基板上。在步驟108中，截斷銀合金銲線，使得第一球狀物留在基板上以形成第一銀合金銲球凸塊。
第2至5圖顯示在本發明一實施例中形成銲球凸塊結構的示意圖。參照第1、2圖，在步驟102中，提供銀合金銲線200。此外，可預備基板202及銲墊204，並將銀合金銲線200引到基板202之銲墊204上方。在此實施例中，銀合金銲線200中銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10，其中銀為此銀合金銲線200的主要成份(>50wt%)。銀合金銲線200的線徑例如可介於10至50毫米，但也可根據需要使用具有其他適合的線徑的銀合金銲線。基板202可為晶片或晶圓。銲墊204例如為鋁銲墊、鎳銲墊、銅銲墊、金銲墊、或其他常用的銲墊材料。
參照第1、3圖，在步驟104中，燒熔銀合金銲線200的一端以形成第一球狀物206。在此實施例中，係以放電結球(electric flame off；EFO)方式燒熔銀合金銲線200以產生球狀物206。然而，在其他實施例中，也可利用在打線接合製程中的其他結球方法形成球狀物206。
參照第1、4圖，在步驟106中，將第一球狀物206接合至基板202上。在此實施例中，以熱壓(hot pressing)或超音波熱壓(ultrasonic hot pressing)將第一球狀物206接合至基板202上的銲墊204上。然而，在其他實施例中，也可 利用其他方法接合第一球狀物206及基板202。
參照第1、5圖，在步驟108中，截斷銀合金銲線200，使得第一球狀物206留在基板202上以形成第一銀合金銲球凸塊208。在此實施例中，銲球凸塊結構包括：基板202；以及第一銀合金銲球凸塊208，設置於基板202的銲墊204上。銀合金銲球凸塊208的直徑可介於20μm至100μm。
在一實施例中，第一銀合金銲球凸塊208中的銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10，且銀為第一銀合金銲球凸塊208中的主要成分(>50wt%)。發明人發現，若僅以純銀製造銲球凸塊，會有材質太軟及易於氧化的問題。然而，若在銀合金銲球凸塊中加入適量的金，則可提高銲球凸塊的抗氧化性及強度。此外，加入適量的鈀則除了可提高銲球凸塊的抗氧化性及強度之外，還可抑制介金屬的成長，並抑制銀的電遷移現象。然而，若金的含量太高時，則會造成介金屬含量過高，導致接點變脆，且也會提高製造成本。另外，若鈀的含量過高時，則會造成銲球凸塊變的太硬太脆，而成為其應用上的限制。
應注意的是，上述銲球凸塊結構雖以銀為主要成分並包含特定比例的金及鈀，然而本發明之範疇並非以此為限。在其他例子中，銲球凸塊結構可更包括其他金屬、非金屬元素、或其他不可避免的雜質成分。應注意的是，其他元素的添加需視應用上的需要調整，以避免影響銲球凸塊結構的性質。
相較於其他金屬銲球凸塊(如：金銲球凸塊或銅銲球凸塊)，本發明之銀合金銲球凸塊不含鉛(較環保)、成本較低， 且後續應用範圍更廣，穩定性更佳。以金銲球凸塊為例，當其後續以軟銲(soldering)接進行組裝(assembly)時，銲球凸塊中的金會大量的熔入銲錫中而形成AuSn4介金屬化合物(intermetallic compounds)，在電子產品使用或可靠度試驗時，也會在金銲球凸塊與鋁墊之界面形成大量脆性AuxAly介金屬化合物，並產生克肯達爾(Kirkendall)孔洞，使得接點斷裂或電阻上升。因此，一般而言，金銲球凸塊必須以導電膠進行組裝。然而導電膠的導電性較差。而金銲球凸塊與鋁墊界面形成大量脆性AuxAly介金屬化合物的問題仍無法避免，使得金銲球凸塊封裝產品的可靠度不佳。
另外，若使用銅銲球凸塊進行接合，則由於其幾乎不會有介金屬形成，故難以判斷接合是否完全，其封裝產品常無法通過殘金試驗(metal residue test)。並且由於銅非常容易氧化及腐蝕，故會造成電子產品的可靠度亦偏低。此外，由於銅的硬度大，故在將銅線打上晶片時常造成晶片破裂，因此也難以以上述方法在晶片上形成銅銲球凸塊。
相反的，本發明所述以銀為主的銀合金銲球凸塊材質較軟，故在將球狀物打至晶片上時不會將晶片打破。此外，銀合金銲球凸塊在接合時的介金屬含量不會太高，故不會造成接點的脆化。然而，由於其仍會產生少量的介金屬，故仍可清楚判斷是否有成功接合，其封裝產品均可通過殘金試驗(metal residue test)。此外，上述銀合金銲球凸塊可根據需要以銲錫、導電膠、熱壓的方式進行組裝，並不限於特定製程方法。
此外，上述銀合金銲球凸塊可形成於晶片(chip)上，或 可直接形成於晶圓(wafer)上，進行特殊的晶圓層級封裝(wafel level package)。直接將銲球凸塊形成於晶圓上的優點在於可先一次形成大量的銲球凸塊，而後再對晶圓進行切割，故可降低製程成本。然而，由於晶圓層級封裝必需在同一晶圓上一次製作數萬個銲球凸塊，如果採用上述銲球凸塊形成技術，其整片晶圓在數萬個銲球凸塊逐一熱壓接合過程必需持續加熱。亦即，當數萬個銲球凸塊逐一與晶片接合至最後一個銲球凸塊時，初期完成的銲球凸塊已經隨著晶圓被加熱數十分鐘。因此，若以金為銲球凸塊的主要成分時，由於金的介金屬形成速度快，這些較早形成而不斷被加熱的金銲球凸塊會因此形成大量的介金屬，使得初期形成的金銲球凸塊因界面脆裂而損壞，造成其強度變弱。因此，在形成金銲球凸塊時，一般只能直接形成於晶片上，而無法直接形成晶圓上而後再進行切割。另外，如果採用銅為銲球凸塊的主要成分，則除了界面介金屬層不足引發接合不完全的疑慮，以及銅銲球凸塊太硬造成晶圓破裂，更嚴重的是初期完成的銅銲球凸塊會因長時間隨著晶圓在空氣中加熱而發生的高溫氧化的現象。
相反的，本發明之銀合金銲球凸塊的介金屬成長厚度適中且成長非常緩慢。因此，可明確看出銲球凸塊的接合情形，且當銀合金銲球凸塊直接形成於晶圓上時，初期形成的銀合金銲球凸塊即使隨著整片晶圓經過一段時間的加熱，也不會產生大量的介金屬，故仍可維持銲球凸塊的強度。
第6圖則顯示在另一實施例中形成堆疊的銲球凸塊結 構的方法。第7圖則顯示由第6圖所示步驟所形成之堆疊的銲球凸塊結構。參照第6圖，在第1圖的步驟108之後，進行步驟110、步驟112及步驟114。在步驟110中，再次燒熔銀合金銲線200的一端以形成第二球狀物。在步驟112中，將第二球狀物接合至第一銀合金銲球凸塊208上。在步驟114中，截斷銀合金銲線200，而形成留在第一銀合金銲球凸塊208上的第二銲球凸塊210，並進一步形成堆疊的銲球凸塊結構212，如第7圖所示。
參照第7圖，銲球凸塊結構包括：基板202；第一銀合金銲球凸塊208，設置於基板202的銲墊204上；以及第二銲球凸塊210位於第一銀合金銲球凸塊208上。其中，第一銀合金銲球凸塊208及第二銲球凸塊210的組成皆為銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10，且銀皆為銲球凸塊的主要成分(>50wt%)。應注意的是，上述銲球凸塊結構雖以銀為主要成分並包含特定比例的金及鈀，然而本發明之範疇並非以此為限。在其他例子中，銲球凸塊結構可更包括其他金屬、非金屬元素、或其他不可避免的雜質成分。應注意的是，其他元素的添加需視應用上的需要調整，以避免影響銲球凸塊結構的性質。在另一實施例中，第二銲球凸塊也可具有與第一銀合金銲球凸塊不同的金屬成分比例。
上述由第一銀合金銲球凸塊208及第二銲球凸塊210所組成堆疊的銲球凸塊結構212的高度較高，後續組裝完成的電子封裝產品接點可以承受較大變形量，故可具有較高的可靠度。此外，由於第一銀合金銲球凸塊208及第二 銲球凸塊210可由相同的銀合金銲線200所形成，可在同一生產線機台直接完成，故製程簡單，可降低成本。
第8至12圖則顯示將上述銀合金銲球凸塊應用於覆晶封裝的一些實施例。在下述實施例中，與之前的實施例相同的元件將不再詳細敘述。在第8圖所示實施例中，將位於第一晶片802的銲墊804上的第一銀合金銲球凸塊808翻轉放置在基板816的銲墊818上，再將第一銀合金銲球凸塊808與基板816以黏著劑814接合，以完成第一種覆晶組裝。在此實施例中，第一銀合金銲球凸塊808中的銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10，且銀為第一銀合金銲球凸塊208的主要成分(>50wt%)。銲墊804、銲墊818例如為鋁銲墊、鎳銲墊、銅銲墊、金銲墊、或其他常用的焊墊材料。黏著劑814例如為導電膠或銲錫。基板816例如為印刷電路板或另一片晶片。
在第9圖所示實施例中，首先，在第二晶片902上的銲墊904上形成銀合金銲球凸塊908。而後，將第一晶片802的第一銀合金銲球凸塊808與第二晶片902的銀合金銲球凸塊908以黏著劑814接合，以完成第二種覆晶組裝。
在第10圖所示實施例中，在第一晶片802的銲墊804上形成具有第一銀合金銲球凸塊808及第二銲球凸塊810的堆疊的銲球凸塊結構812。將第一晶片802翻轉放置基板816上，再將堆疊的銲球凸塊結構812與基板816上的銲墊818以黏著劑814接合，以完成第三種覆晶組裝。
在第11圖所示實施例中，首先，在第二晶片902上的銲墊904上形成銀合金銲球凸塊908。而後，將第一晶片 802(其上具有第一銀合金銲球凸塊808及第二銲球凸塊810的堆疊的銲球凸塊結構812)翻轉放置在第二晶片902上。接著，將第一晶片802之堆疊的銲球凸塊結構812與第二晶片902上的銀合金銲球凸塊908以黏著劑814接合，以完成第四種覆晶組裝。
在第12圖所示實施例中，首先，在第二晶片902上的銲墊904上形成具有第一銲球凸塊908及第二銲球凸塊910的堆疊的銲球凸塊結構912。而後，將第一晶片802(其上具有第一銀合金銲球凸塊808及第二銲球凸塊810的堆疊的銲球凸塊結構812)翻轉放置在第二晶片902上。接著，將第一晶片802之堆疊的銲球凸塊結構812與第二晶片902上的堆疊的銲球凸塊結構912以黏著劑814接合，以完成第五種覆晶組裝。
第13圖則顯示將銀合金銲球凸塊應用於捲帶自動接合的一實施例。參照第13圖，將基板816以捲帶自動接合於第一晶片802的銲墊804上的第一銀合金銲球凸塊808。其中，第一銀合金銲球凸塊808係以熱壓的方式與捲帶自動接合基板816上的銲墊818接合。
綜上所述，在本發明的實施例中提供一種創新的銀合金銲球凸塊及其製造與組裝方法。其中，銀合金銲球凸塊與銲墊接合可形成足夠的介金屬層，確保其接合性。然而，其介金屬化合物的成長極為緩慢，故不會導致接合界面脆化，因此有極高的可靠度。此外，本發明各實施例之銀合金銲球凸塊與各種電鍍銲錫合金銲球凸塊相較，無環境污染的顧慮，且其合金組成可以很精確控制，亦無銲錫合金 銲球凸塊的共平面度問題。再者，本發明之銀合金銲球銲球凸塊更可應用於晶圓層級封裝(Wafer Level Package)。
【比較例1】
使用直徑25.4μm的純金線以電弧放電(arc discharge)將線頭燒熔，利用表面張力自然形成圓球狀，再以超音波熱壓銲線技術與矽晶片的鋁墊接合，並將接合至晶片的鋁墊上的金線截斷，以完成金銲球凸塊的製作，其製程參數如表一所示；金銲球凸塊尺寸如表二所示；接合強度則如表三所示。
【比較例2】
使用直徑25.4μm的純銅線以電弧放電(arc discharge)將線頭燒熔，利用表面張力自然形成圓球狀，再以超音波熱壓銲線技術與矽晶片的鋁墊接合，並將接合至晶片的鋁墊上的純銅線截斷，以完成銅銲球凸塊的製作。
【實施例1】銲球凸塊製程
使用直徑25.4μm的89wt%銀-8wt%金-3wt%鈀的銀合金線以電弧放電(arc discharge)將線頭燒熔，利用表面張力自然形成圓球狀，再以超音波熱壓銲線技術與矽晶片的鋁墊接合，並將接合至晶片的鋁墊上的銀合金線截斷，以完成銀合金銲球凸塊的製作，其製程參數如表一所示；製作完成的銀合金銲球凸塊的尺寸如表二所示；接合強度則如表三所示。參照表二，雖然使用相同直徑的原始銲線，銀 合金銲球凸塊尺寸略小於金銲球銲球凸塊。銀合金銲球凸塊較小的尺寸有利於高密度封裝之微小間距需求。此外，將此實施例的晶片上的銀合金銲球凸塊與比較例1的金銲球凸塊以DAGE4000接點強度測試機進行推力試驗(如表三所示)，銀合金銲球凸塊的接合強度較金銲球凸塊高21%。
【實施例2】可靠度測試
將實施例1的銀合金銲球凸塊、比較例1的金銲球凸塊及比較例2的銅銲球凸塊以96.5wt%錫-3wt%銀-0.5wt%銅的銲錫與球格陣列構裝(BGA)之雙馬來醯亞胺三嗪樹脂(bismaleimide triazine resin；BT樹脂)基板接合，再於基板植上銲錫球，完成覆晶/BGA高密度封裝產品的組裝。而後，將三種材質的銲球凸塊組裝產品進行冷熱循環試驗(Temperature Cycling Test；TCT)、壓力釜試驗(Pressure Cooking Test；PCT)及高溫貯存試驗(High Temperature Storage；HTS)，以進行可靠度試驗。
經實驗發現，比較例1的金銲球凸塊與鋁墊界面產生的介金屬層厚度高達2.1μm，故會造成接點的脆裂與產品失效。另外，比較例2的銅銲球凸塊所形成的介金屬層厚度只有0.2μm，難以確認其是否完全接合。而實施例1的銀合金銲球凸塊所產生的介金屬層厚度大約0.6μm，可以確保界面接合效果，亦不致於造成界面脆裂。
此外，將上述組裝產品進行冷熱循環試驗500次，比較例1的金銲球凸塊的介金屬層厚度劇增到3.8μm，比較例2的銅銲球凸塊組裝產品經過3000次冷熱循環試驗的介 金屬層厚度則僅成長至0.3μm，而實施例1的銀合金銲球凸塊組裝產品經過3000次冷熱循環試驗的介金屬層厚度成長至1.0μm。
另外，在壓力釜試驗168小時後，比較例1的金銲球凸塊組裝產品的介金屬層厚度成長至3.1μm；比較例2的銅銲球凸塊組裝產品的介金屬層厚度僅成長至0.4μm；而實施例1的銀合金銲球凸塊組裝產品的介金屬層厚度則成長至0.9μm。
而在高溫貯存試驗500小時後，比較例1的金銲球凸塊組裝產品的介金屬層厚度大幅成長至4.3μm，此時幾乎將晶片上鋁墊完全耗盡；比較例2的銅銲球凸塊組裝產品的介金屬層厚度僅成長至0.7μm；而實施例1的銀合金銲球凸塊組裝產品的介金屬層厚度則成長至1.8μm。
綜合上述各種可靠度試驗可知比較例1的金銲球凸塊組裝產品的介金屬化合物成長太快，會造成接合界面脆裂。相反的，比較例2的銅銲球凸塊組裝產品的介金屬層成長太慢，其界面有接合不完全的疑慮。亦即，介金屬層厚度過多或不足均會影響組裝產品的可靠度。然而，實施例1的銀合金銲球凸塊組裝產品的介金屬層厚度均介於金銲球凸塊與銅銲球凸塊之間，既不會發生金銲球凸塊的接合界面脆裂，也不會有銅銲球凸塊接合不完全的疑慮，故在可靠度試驗優於比較例1的金銲球凸塊與比較例2的銅銲球凸塊的組裝產品。
【實施例3】晶圓級封裝應用
在一6吋矽晶圓的鋁墊上分別製作12000顆實施例1的銀合金銲球凸塊、比較例1的金銲球凸塊與比較例2的銅銲球凸塊，以進行晶圓層級封裝應用之試驗。
在完成矽晶圓上所有銲球凸塊的製作後，觀察銲球凸塊的介金屬厚度。實驗結果顯示，最先形成的金銲球凸塊(比較例1)的介金屬層厚度為1.8μm；最先形成的銅銲球凸塊(比較例2)的介金屬層厚度為與0.1μm；而最先形成的銀合金銲球凸塊(實施例1)的介金屬層厚度為0.5μm。
此外，在晶圓上最初10個金銲球凸塊與銅銲球凸塊的介金屬層平均厚度分別為3.2μm與0.4μm，而銀合金銲球凸塊的介金屬層厚度為0.8μm。這些較早形成的金銲球凸塊已有界面脆裂現象，而銅銲球凸塊則不僅接合不佳，而且氧化極為嚴重，甚至晶片有破裂跡象。然而，實施例1的銀合金銲球凸頭未呈現這些問題。
另外，此晶圓層級封裝採用比較例1的金銲球凸塊與實施例1的銀合金銲球凸塊的良率均接近100%，而比較例2的銅銲球凸塊的良率只有大約64%。
此外，完成的晶圓層級封裝最初10個金銲球凸塊的平均推球強度較最後10個降低約17%，銅銲球凸塊更降低約37%，而銀合金銲球凸塊的最初與最後10個銲球凸塊平均推球強度幾乎維持不變。
【實施例4】捲帶自動接合之應用
在積體電路晶片的鋁墊上分別製作實施例1的銀合金銲球凸塊與比較例1的金銲球凸塊，再利用熱壓頭使銲球 凸塊與聚亞醯胺(PI)捲帶基板上的銅箔電極接合。而後，將晶片上的銀合金銲球凸塊與金銲球凸塊以DAGE4000接點強度測試機進行推力試驗，結果如表四。如表四所示，銀合金銲球凸塊的接合強度較金銲球凸塊高17%。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
102、104、106、108、110、112、114‧‧‧步驟
200‧‧‧銀合金銲線
202‧‧‧基板
204、804、904、818‧‧‧銲墊
206‧‧‧第一球狀物
208‧‧‧第一銀合金銲球凸塊
210、810、910‧‧‧第二銲球凸塊
802‧‧‧第一晶片
808‧‧‧第一銀合金銲球凸塊
816‧‧‧基板
814‧‧‧黏著劑
902‧‧‧第二晶片
212、812、912‧‧‧堆疊的銲球凸塊結構
908‧‧‧第一銲球凸塊
第1圖顯示在本發明一實施例中形成銲球凸塊結構的流程圖。
第2至5圖顯示在本發明一實施例中形成銲球凸塊結構的示意圖。
第6圖則顯示在另一實施例中形成堆疊的銲球凸塊結構的方法。
第7圖則顯示由第6圖所示步驟所形成之堆疊的銲球凸塊結構。
第8至12圖則顯示將上述銀合金銲球凸塊應用於覆晶封裝的一些實施例。
第13圖則顯示將銀合金銲球凸塊應用於捲帶自動接合的一實施例。
200‧‧‧銀合金銲線
202‧‧‧基板
204‧‧‧銲墊
208‧‧‧第一銀合金銲球凸塊

Claims (11)

  1. 一種銲球凸塊結構，包括：一基板；以及一第一銀合金銲球凸塊，設置於該基板上，其中該第一銀合金銲球凸塊中銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10。
  2. 如申請專利範圍第1項所述之銲球凸塊結構，其中該基板包括一晶片或一晶圓。
  3. 如申請專利範圍第1項所述之銲球凸塊結構，其中該基板更包括一銲墊，且該第一銀合金銲球凸塊位於該焊墊上。
  4. 如申請專利範圍第1項所述之銲球凸塊結構，更包括一第二銲球凸塊位於該第一銀合金銲球凸塊上。
  5. 如申請專利範圍第4項所述之銲球凸塊結構，其中該第二銲球凸塊與該第一銀合金銲球凸塊的組成成分相同。
  6. 一種銲球凸塊結構的形成方法，包括：提供一銀合金銲線；燒熔該銀合金銲線的一端以形成一第一球狀物；將該第一球狀物接合至一基板上；以及截斷該銀合金銲線，使得該第一球狀物留在該基板上以形成一第一銀合金銲球凸塊，其中該銀合金銲線中銀：金：鈀的重量比=60~99.98：0.01~30：0.01~10。
  7. 如申請專利範圍第6項所述之銲球凸塊結構的形成方法，其中該基板包括一晶片或一晶圓。
  8. 如申請專利範圍第6項所述之銲球凸塊結構的形成方法，其中該銀合金銲線的線徑介於10至50毫米。
  9. 如申請專利範圍第6項所述之銲球凸塊結構的形成方法，其中該第一球狀物係以熱壓接合或超音波熱壓接合至該基板上。
  10. 如申請專利範圍第6項所述之銲球凸塊結構的形成方法，其中該基板更包括一銲墊，且該第一球狀物接合至該銲墊上。
  11. 如申請專利範圍第6項所述之銲球凸塊結構的形成方法，更包括：再次燒熔該銀合金銲線的一端以形成一第二球狀物；將該第二球狀物接合至該第一銀合金銲球凸塊上；以及截斷該銀合金銲線，使得該第二球狀物留在該第一球狀物上。
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DE102013107065A1 (de) 2014-05-08
US9490147B2 (en) 2016-11-08
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US20140124920A1 (en) 2014-05-08
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