CN205582920U - 一种铜基表面镀镍钯金键合丝 - Google Patents

一种铜基表面镀镍钯金键合丝 Download PDF

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CN205582920U
CN205582920U CN201620364008.0U CN201620364008U CN205582920U CN 205582920 U CN205582920 U CN 205582920U CN 201620364008 U CN201620364008 U CN 201620364008U CN 205582920 U CN205582920 U CN 205582920U
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李天祥
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Make Innovations Electronic Science And Technology Co Ltd In University Of Science And Technology Shandong
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

本实用新型涉及一种铜基表面镀镍钯金键合丝，它包括铜丝基材(1)，所述铜丝基材(1)的外表面依次镀覆有镀镍层(2)、镀钯层(3)和镀金层(4)；实现了结合力高，键合力强，方便镍钯金框架的焊接且焊点无变形缺陷，能够防止后续拉丝过程中剥落和裂纹的效果。

Description

一种铜基表面镀镍钯金键合丝
技术领域
本实用新型涉及一种铜基表面镀镍钯金键合丝及其制备方法。
背景技术
对于当前半导体封装用键合丝替代材料的选择，市场主要选择镀钯铜线。镀钯铜线具有高电导率和导热率，并能形成更可靠的金属间结合层，由此带来高温环境下的产品可靠性优势。相对于金线，具有较高的杨氏模量，因此，镀铜线具有更好的线弧特性。然而，由于钯和铜结合力较弱，容易产生漏镀或脱落，给后续的拉拔带来质量隐患。镍和铜有很好的结合力，钯和镍的结合力也很高，外层镀金解决了钯塑性差的问题，很好的解决了后续拉丝过程中剥落和裂纹的情况。普通的金线，铜线，镀钯线不容易在镍钯金框架上键合，而镀镍钯金键合丝则可以解决这个问题。目前绝大部分的镀钯键合铜丝基材采用高于5N纯度的单晶铜，而由于铜晶粒在变型时各向异性，往往引起第二焊点的变型缺陷。
发明内容
本实用新型解决的技术问题是提供一种结合力高，键合力强，方便镍钯金框架的焊接且焊点无变形缺陷，能够防止后续拉丝过程中剥落和裂纹的铜基表面镀镍钯金键合丝。
本实用新型的技术方案是一种铜基表面镀镍钯金键合丝，它包括铜丝基材1，其特征在于：所述铜丝基材1的外表面依次镀覆有镀镍层2、镀钯层3和镀金层4。
本实用新型的技术方案还可以是经镀覆后的所述表面镀镍钯金键合丝的镀镍层(2)厚度为0.05um～0.1μm，镀钯层(3)厚度为2um～4.0um，镀金层(4)厚度为0.05um～0.1μm。
本实用新型的技术方案还可以是镀覆有所述镀镍层2、镀钯层3和镀金层4的铜丝基材1经拉伸后形成直径为15～50μm的表面镀镍钯金键合丝。
本实用新型的有益效果是所述铜丝基材1的外表面依次镀覆有镀镍层2、镀钯层3和镀金层4；由于铜和镍的结合力很好，镍和钯的结合力也很好，该镀层方式解决了铜钯结合力差，大大提高了成品率和生产效率；实现了结合力高，键合力强，方便镍钯金框架的焊接且焊点无变形缺陷，能够防止后续拉丝过程中剥落和裂纹的效果。
附图说明
图1为本实用新型的结构示意图
图1中1、铜丝基材，2、镀镍层，3、镀钯层，4镀金层。
具体实施方式
根据图1所示，本实用新型涉及一种铜基表面镀镍钯金键合丝，它包括铜丝基材1，所述铜丝基材1的外表面依次镀覆有镀镍层2、镀钯层3和镀金层4，镀覆有所述镀镍层2、镀钯层3和镀金层4的铜丝基材1经拉伸后形成直径为15～50μm的表面镀镍钯金键合丝；镀覆有所述镀镍层2、镀钯层3和镀金层4的铜丝基材1经拉伸后形成直径为15～50μm的表面镀镍钯金键合丝；由于铜和镍的结合力很好，由于表面镀镍钯键金合丝在后续的超细拉伸过程中不必进行中间退火镀层和基体就具有较好的结合力和最终塑性变形能力，镀层在压力加工过程中变形一致，表面均匀，致密完整，镍和钯的结合力也很好；该镀层方式解决了铜钯结合力差，大大提高了成品率和生产效率；实现了结合力高，键合力强，方便镍钯金框架的焊接且焊点无变形缺陷，能够防止后续拉丝过程中剥落和裂纹的效果。

Claims (3)

1.一种铜基表面镀镍钯金键合丝，它包括铜丝基材(1)，其特征在于：所述铜丝基材(1)的外表面依次镀覆有镀镍层(2)、镀钯层(3)和镀金层(4)。
2.根据权利要求1所述的一种铜基表面镀镍钯金键合丝，其特征在于：经镀覆后的所述表面镀镍钯金键合丝的镀镍层(2)厚度为0.05um～0.1μm，镀钯层(3)厚度为2um～4.0um，镀金层(4)厚度为0.05um～0.1μm。
3.根据权利要求1或2所述的一种铜基表面镀镍钯金键合丝，其特征在于：镀覆有所述镀镍层(2)、镀钯层(3)和镀金层(4)的铜丝基材(1)经拉伸后形成直径为15～50μm的表面镀镍钯金键合丝。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105762129A (zh) * 2016-04-27 2016-07-13 山东科大鼎新电子科技有限公司 一种铜基表面镀镍钯金键合丝及其制备方法
CN109755138A (zh) * 2019-01-25 2019-05-14 常宁市隆源铜业有限公司 一种铜复合丝的制备方法
CN112687649A (zh) * 2020-12-25 2021-04-20 中国科学院宁波材料技术与工程研究所 键合线表面的耐腐蚀抗氧化涂层及其制备方法与应用

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105762129A (zh) * 2016-04-27 2016-07-13 山东科大鼎新电子科技有限公司 一种铜基表面镀镍钯金键合丝及其制备方法
CN109755138A (zh) * 2019-01-25 2019-05-14 常宁市隆源铜业有限公司 一种铜复合丝的制备方法
CN109755138B (zh) * 2019-01-25 2020-09-15 常宁市隆源铜业有限公司 一种铜复合丝的制备方法
CN112687649A (zh) * 2020-12-25 2021-04-20 中国科学院宁波材料技术与工程研究所 键合线表面的耐腐蚀抗氧化涂层及其制备方法与应用
CN112687649B (zh) * 2020-12-25 2024-03-12 中国科学院宁波材料技术与工程研究所 键合线表面的耐腐蚀抗氧化涂层及其制备方法与应用

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