CN101842505A - 接合线 - Google Patents

接合线 Download PDF

Info

Publication number
CN101842505A
CN101842505A CN200880113496A CN200880113496A CN101842505A CN 101842505 A CN101842505 A CN 101842505A CN 200880113496 A CN200880113496 A CN 200880113496A CN 200880113496 A CN200880113496 A CN 200880113496A CN 101842505 A CN101842505 A CN 101842505A
Authority
CN
China
Prior art keywords
quality ppm
ppm
quality
bonding wire
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200880113496A
Other languages
English (en)
Other versions
CN101842505B (zh
Inventor
村井博
千叶淳
天田富士夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Publication of CN101842505A publication Critical patent/CN101842505A/zh
Application granted granted Critical
Publication of CN101842505B publication Critical patent/CN101842505B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H01L2224/78303—Shape of the pressing surface, e.g. tip or head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H01L2224/78305—Shape of other portions
    • H01L2224/78306—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0107—Ytterbium [Yb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011—Groups of the periodic table
    • H01L2924/01105—Rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

于高纯度金接合线，消除归因于添加元素氧化物的附着引起的第二次压接不良。由镁5～100质量％、铟5～20质量％、铝15～20质量％、镱5～20质量％、及余量为纯度99.995质量％以上的金而成的金合金接合线。再添加镧5～20质量％、镏5～20质量％、锡5～100质量％、锶5～100质量％之中的一种以上，或使于此等的金合金内含有钯0.01～1.2质量％。含有此等的微量元素的接合线，系于藉由微小放电而形成焊球时及第一次接合时生成而附着于毛细管尖端部的微量添加元素氧化物于第二次接合时由于会转印至接合线，而不蓄积，所以不致生成由于此等的蓄积污染物质引起的障碍。

Description

接合线
技术领域
本发明是有关连接半导体装置与外部引线的接合线。
技术背景
于连接IC芯片的电极与外部配线时，采用介经接合线配线的接合线接合的方法为人所知的。其中作为接合IC芯片的Al电极及接合线的方式，以超音波并用热压接及超音波接合占有主流。因此，超音波并用热压接通常是利用焊球接合方法予以进行着。采用后述的专利文献(日本专利第3657087号公报)所示的图面说明利用焊球接合方法的接合法。
如图1(a)所示，接合线2是通过毛细管压接工具1(capillary；以下称毛细管)的接合线插通孔而由毛细管尖端部的细孔被送出，使电气火炬3与该尖端对向，于与接合线2之间放电，加热、熔融接合线2的尖端，形成焊球4。接着，如图1(b)所示，使毛细管1下降并予压接(第一次接合)该焊球4至IC芯片6上的Al电极5之上。此时虽未予图标，但超音波振动通过毛细管1予以附加的同时，IC芯片6由于受加热块加热，故上述焊球4经予热压接而形成压接焊球4’。其后，如图1(c)所示，毛细管1描绘指定的轨迹，移动于引导框架(lead frame)的外部配线8的上面并下降。此时虽未予图标，但超音波振动通过毛细管1予以附加，外部配线8由于受加热块加热，所以接合线2侧面是经予热压接而接合(第二次接合)。接合后，如图1(d)所示，由挟持器7在保持挟持着接合线2的状态下上升，接合线2在由毛细管尖端部的细孔仅被少许送出的状态(被称作曳尾)予以切断结束配线。边重复这一操作，边进行接合。
接合线接合装置用的圆筒形毛细管1，是由氧化铝、氧化锆或红宝石或蓝宝石等高熔点材料所形成，再以钻石被覆等被覆于此等高熔点材料的毛细管尖端部作为高使用寿命，但以氧化铝为代表性者。毛细管1具有供插入接合用的金属接合线于内部而用的接合线导出孔102。例如，于采用25μmψ程度的金属接合线的情形，接合线导出孔102的大小是33μmψ～40μmψ程度。毛细管1的瓶颈部的外侧，是考虑接合的间隔及接合后的金属接合线的形状及大小，予以设成10°程度的角度。因此，孔径H为38μm，芯片径T为152μm，及去角取面(chamfer)径CD为64μm。
至目前为止有各式各样的接合线已予开发着。例如，为了使由已微量添加稀土类元素而成的金(Au)合金提高抗拉强度，即为众所周知的。此外，至于为使焊球形状、抗拉强度及剪切强度提高的接合线，以由含有锶(Sr)1～10重量ppm、铍(Be)1～20重量ppm、铟(In)1～50重量ppm、的范围以内，余量为金及不可避免的杂质而成为特征的接合用金合金细线亦如后述的专利文献2(日本专利第3059314号公报)，即为众所周知的。此外，为使常期间接合时的接合稳定性提高的Au-1质量％合金的接合线材料亦是众所周知的。这些接合线材料是被视作于纯金中完全予以合金化的，微量添加元素会升华而有恶劣的影响一事，至目前为止尚未被检讨的。
然而，于接合线压接作业方面，毛细管1的尖端部通常是予加热至200℃，此外利用电弧放电制作初期焊球时，毛细管1的尖端部表面温度，有瞬间加热至1000℃以上的温度的情形。因此，若用机械人以1秒钟十数次至数十万次的高速进行接合时，则不论毛细管1的尖端部的材质如何，首先由接合线金属所转印的污染物质会污染毛细管1的尖端部100。其后，这一污染物质会逐渐不均匀的蓄积于毛细管1的尖端部100上。由于这一已蓄积的污染物质而使毛细管1受第二次接合的超音波或力量的传播阻碍，而导致未能施加接合所需的能量的事态。于已使用公知的接合线材料的毛细管，由于经予蓄积于尖端部100的微量添加元素等的污染物质，会使引线架的外部配线8上的第二次接合后的接合线较不能切断，或以数十万次有一次的比例，使经予蓄积的污染物质自毛细管1的尖端部100剥落。由于这一第二次接合不良而使接合装置经常发生停机，生成停止接合作业的事态。此外，虽然不至于停止焊球接合装置，但是却使第二次接合方面的接合强度大幅下降。
专利文献1：日本专利第3657087号公报
专利文献2：日本专利第3059314号公报
发明内容
有鉴于上述问题点，本发明的目的是提供与公知技术相同的拉力强度(pull strength)及真圆度优越的接合线，而且即使于每秒钟以十数次至数十万次的高速连续进行接合时，污染物质亦不致蓄积于毛细管的尖端部的第二次接合强度不会降低的接合线。
本发明对接合线的度优越的金合金线，经精心研究的结果，于纯度99.995质量％以上的金(Au)或纯度99.995质量％以上的金(Au)＝钯(Pd)合金内若予微量的添加元素的镁(Mg)、铟(In)、铝(Al)及镱(Yb)为指定量的范围内时，发现这些微量的添加元素虽然会污染毛细管的尖端部，但是却发挥该污染物质不致蓄积于毛细管的尖端部的效果，以至完成本发明。
较具体说来，如果依照本发明时，就可予提供以由镁(Mg)5～100质量ppm、铟(In)5～20质量ppm、铝(Al)5～20质量ppm、镱(Yb)5～20质量ppm、及余量为纯度99.995质量％以上的金(Au)而成的金合金为特征的接合线。
如果依照本发明时，就可予提供以由钙(Ca)5～20质量ppm、镁(Mg)5～100质量ppm、铟(In)5～20质量ppm、铝(Al)5～20质量ppm、镱(Yb)5～20质量ppm、及余量为纯度99.995质量％以上的金(Au)而成的金合金为特征的接合线。
如果依照本发明时，就可予提供以由镧(La)5～20质量ppm、镏(Lu)5～20质量ppm、锡(Sn)5～100质量ppm及锶(Sr)5～100质量ppm中至少一种以上、镁(Mg)5～100质量ppm、铟(In)5～20质量ppm、铝(Al)5～20质量ppm、镱(Yb)5～20质量ppm、及余量为纯度99.995质量％以上的金(Au)而成的金合金为特征的接合线。
此外，如果依照本发明时，就可予提供以由镧(La)5～20质量ppm、镏(Lu)5～20质量ppm、锡(Sn)5～100质量ppm及锶(Sr)5～100质量ppm中至少一种以上、钙(Ca)5～20质量ppm、镁(Mg)5～100质量ppm、铟(In)5～20质量ppm、铝(Al)5～20质量ppm、镱(Yb)5～20质量ppm、及余量为纯度99.995质量％以上的金(Au)而成的金合金为特征的接合线。
另一方面，如果依照本发明时，就可予提供以由钯(Pd)0.01～1.2质量ppm、钙(Ca)5～20质量ppm、镁(Mg)5～100质量ppm、铟(In)5～20质量ppm、铝(Al)5～20质量ppm、镱(Yb)5～20质量ppm、及余量为纯度99.995质量％以上的金(Au)而成的金合金为特征的接合线。
此外，如果依照本发明时，就可予提供以由镧(La)5～20质量ppm、镏(Lu)5～20质量ppm、锡(Sn)5～100质量ppm及锶(Sr)5～100质量ppm中至少一种以上、钯(Pd)0.01～1.2质量％、镁(Mg)5～100质量ppm、铟(In)5～20质量ppm、铝(Al)5～20质量ppm、镱(Yb)5～20质量ppm、及余量为纯度99.995质量％以上的金(Au)而成的金合金为特征的接合线。
此外，如果依照本发明时，就可予提供以由镧(La)5～20质量ppm、镏(Lu)5～20质量ppm、锡(Sn)5～100质量ppm及锶(Sr)5～100质量ppm中至少一种以上、钯(Pd)0.01～1.2质量％、钙(Ca)5～20质量ppm、镁(Mg)5～100质量ppm、铟(In)5～20质量ppm、铝(Al)5～20质量ppm、镱(Yb)5～20质量ppm、及余量为纯度99.995质量％以上的金(Au)而成的金合金为特征的接合线。
本发明的金合金接合线，是于通过微小放电而形成焊球时或第一次接合时形成升华，附着于毛细管尖端部的微量添加元素氧化物等的污染物质会随着于第二次接合时的超音波或热压接操作而被容易的转印至接合对象的接合线等上，而不蓄积，所以伴随着这些的污染物质而引起的接合不良或剥离的障碍可予消除。
附图说明
图1是说明与本发明的焊球压接方法有关的接合法的模式图。
图2是表示使用于本发明的接合的毛细管的前端部的截面形状。
图3是表示于本发明的第一次接合时的接合部的形状的一实施例的照片。
图4是表示于本发明的第二次接合时的接合部的形状的一实施例的照片。
附图中主要图号说明
1-毛细管；2-接合线；3-电气火炬；4-焊球；4’-压接焊球；5-IC芯片；6-Al电极；7-挟持器；8-外部配线；100-毛细管尖端部；102-接合线导出孔。
具体实施方式
于本发明，微量的添加元素的种类少，成份范围狭窄，受限制。接合线的第二次接合性，虽是以完全不含杂质的纯金为最优越，但本发明的微量的添加元素，完全不如此阻碍此纯金所具的优越的第二次接合性的元素。如果本发明的微量的添加元素的配合比失去配衡时，就会大大的影响于第二次接合的经予压接的接合部形状。
而且，本发明如果为金(Au)合金系时，则金(Au)以外的微量的添加元素及杂质元素的合计如果未满100质量ppm时，因可表示作99.99质量％以上的高纯度金接合线，故商业上是较有利的。
Pd：于本发明的合金系方面，钯(Pd)有助于第一次接合部的长期接合可靠性的元素。如果愈添加Pd，虽愈增加长期接合可靠性，但如果超过1.2％时，则初期焊球变硬，会发生芯片龟裂等现象，而使接合变成困难。
Mg：于本发明的合金系，镁(Mg)是第二次接合性良好的必需的元素，加上对熔融焊球的压接直径的真圆度有效的元素。另一方面，对接合线的拉伸强度而言，镁(Mg)如同钙(Ca)般，并不带有效果。于本发明的合金系，镁(Mg)需要5质量ppm以上。如果未满此值时，则第二次接合性并无效果。于本发明的合金系，为使接合线的第二次接合性良好，以镁(Mg)在30质量ppm以上为佳。另一方面，于本发明的合金系，镁(Mg)即使超过100质量ppm而变成过多，于初期形成焊球时所生成的氧化物亦会淀积于毛细管上，而对第二次接合性有恶劣影响。于本发明的合金系，为了使第二次接合性稳定，镁(Mg)以于70质量ppm以下为佳。
In：于本发明的合金系，铟(In)是第二次接合性良好的必需的添加元素，加上对熔融焊球的压接直径的真圆度有效的元素。另一方面，对接合线的拉伸强度而言，铟(In)如同钙(Ca)般，并不带有效果。于本发明的合金系方面，铟(In)需为质量5ppm以上。未满此值时，则第二次接合性并无效果。另一方面，于本发明的合金系，铟(In)如果超过20质量ppm时，则氧化物会淀积于毛细管上，而对第二次接合性有恶劣影响。
Al：于本发明的合金系，铝(Al)是第二次接合性良好的必需的元素。另一方面，对接合线的拉伸强度而言，铝(Al)如同钙(Ca)般，并不带有效果。于本发明的合金系方面，铝(Al)需为质量5ppm以上。未满此值时，则第二次接合性并无效果。另一方面，于本发明的合金系，铝(Al)如果超过20质量ppm时，则氧化物会淀积于毛细管上，而对第二次接合性有恶劣影响。
Yb：于本发明的合金系，镱(Yb)是第二次接合性良好的必需的添加元素，加上对熔融焊球的压接直径的真圆度有效的元素。另一方面，对接合线的拉伸强度而言，镱(Yb)如同钙(Ca)般，并不带有效果。于本发明的合金系，镱(Yb)需为质量5ppm以上。未满此值时，则第二次接合性并无效果。另一方面，于本发明的合金系，镱(Yb)如果超过20质量ppm时，则氧化物会淀积于毛细管上，而对第二次接合性有恶劣影响。
Ca：于本发明的合金系，钙(Ca)是对接合线的拉伸强度最具效果的元素。然而，钙(Ca)因氧化物较易殿积于毛细管的尖端部的去角取面面上，所以于本发明的合金系，是任意的添加元素，其添加量则受限定的。于本发明的合金系，钙(Ca)未满5质量ppm时，则接合线的拉伸强度并无效果。如果超过20质量ppm时，则氧化物会淀积于毛细管的去角取面面上，而对第二次接合性有恶劣影响，所以钙(Ca)的添加量是在5～20质量ppm的范围内。
La：于本发明的合金系，镧(La)是对接合线的拉伸强度有效的元素。加上对第二次接合性有效的元素。又，对熔融焊球的压接直径的真圆度有效的元素。然而，镧(La)因氧化物较易殿积于毛细管的尖端面上，故于本发明的合金系，是任意的添加元素，其添加量则受限定的。于本发明的合金系，镧(La)未满质量5ppm时，则接合线的拉伸强度并无效果。如果超过20质量ppm时，则氧化物会淀积于毛细管的尖端面上，而对第二次接合性有恶劣影响，所以镧(La)的添加量系在5～20质量ppm的范围内。
Lu：于本发明的合金系，镏(Lu)是对接合线的拉伸强度有效的元素。加上对第二次接合性有效的元素。然而，镏(Lu)因氧化物较易殿积于毛细管的尖端面上，所以于本发明的合金系，是任意的添加元素，其添加量则受限定的。于本发明的合金系，镏(Lu)未满5质量ppm时，则接合线的拉伸强度并无效果。如果超过20质量ppm时，则氧化物会淀积于毛细管的尖端面上，而对第二次接合性有恶劣影响，所以镏(Lu)的添加量在5～20质量ppm的范围内。
Sn：于本发明的合金系，锡(Sn)是对接合线的第二次接合性有效的元素。然而，锡(Sn)因氧化物较易殿积于毛细管的尖端面上，所以于本发明的合金系，是任意的添加元素，其添加量则受限定的。于本发明的合金系，锡(Sn)需为5质量ppm以上。未满此值时，则接合线的第二次接合性并无效果。于本发明的合金系，为使接合线的第二次接合性稳定，锡(Sn)以在30质量ppm以上为佳。另一方面，于本发明的合金系，锡(Sn)即使超过100质量ppm而变成过多，氧化物亦会淀积于毛细管的尖端面上，而对第二次接合性有恶劣影响。于本发明的合金系，为了使第二次接合性稳定，锡(Sn)以于70质量ppm以下为佳。
Sr：于本发明的合金系，缌(Sr)是对接合线的第二次接合性有效的元素。加上对熔融焊球的压接直径的真圆度有效的元素。然而，缌(Sr)因氧化物较易殿积于毛细管的尖端面上，所以于本发明的合金系，是任意的添加元素，其添加量则受限定的。于本发明的合金系，缌(Sr)需为5质量ppm以上。未满此值时，则接合线的第二次接合性并无效果。于本发明的合金系，为了使接合线的第二次接合性稳定，缌(Sr)以在30质量ppm以上为佳。另一方面，于本发明的合金系，缌(Sr)即使超过100质量ppm而变成过多，氧化物也会淀积于毛细管的尖端面上，而对第二次接合性有恶劣影响。于本发明的合金系，为了使第二次接合性稳定，缌(Sr)以于70质量ppm以下为佳。
至于本发明的接合线，其第二次接合性、拉伸强度及熔融焊球的压接直径的真圆度则依下述方式予以测定。
(1)第二次接合性
第二次接合性，是指将接合线噛合于由经予镀银(Ag)的42合金而成的引导框架并予针脚式接合(stitch bonding)之际，施加热、负载、超音波而使接合线变形，接合至引导框架时的接合容易度。关于第二次接合性，则以进行50万次接合试验时，测定出于中途的第二次接合的不能接合数量，予以评估。
(2)拉伸强度
关于伸长率成为4％时的拉伸强度，采用市售的拉伸试验机予以测定。于室温，以100mm作为标点距离，利用拉伸试验机以拉伸速度10mm/分拉伸合金线，求得裂断时的负载值及伸长率予以测定。且，伸长率是以下式由裂断时的伸长量求出。
(3)熔融焊球的压接直径的真圆度
熔融焊球的压接直径的真圆度的评估，是对硅(Si)芯片上的铝(Al)电极(铝(Al)厚度：约1×10-6m)进行球形压接(ball bonding)，其后于由经予镀银(Ag)的42合金而成的引导框架之间进行针脚式接合，并予结线。于该时，跨距(span)是3×10-3m，脚数为200根，从已结线的接合线中采用任意的50根接合线予以评估。测定与超音波的施加方向平行的方向的压接直径及与超音波的施加方向垂直的方向的压接直径，将其比值于0.95～1.0的5范围内，以◎记号表示；于0.90～1.00的范围内(于0.95～1.05的范围内除外)，以○记号表示；于其它范围，以△记号表示。
(4)金合金线的制造方法
以下说明与本发明有关的金合金线之较佳的制造方法。于高纯度金内添加指定量的元素，于真空熔解炉内熔解后，铸造成晶锭(ingot)。将该晶锭置入带槽轧辊，采用拉线机进行冷轧加工及中间退火，通过最终拉线加工，对已制成直径25×10-6m的细线后施加最终退火。
(5)用途
由本发明制得的接合线，较适合于连接IC芯片至脚端引线上的方法。而且，在此所谓的球形压接，是于以接合线配线IC芯片的电极，特别指Al电极及外部引线或其它电极之际，接合线与电极部的接合于第一次接合形成熔融焊球，于第二次接合不形成熔融焊球，压接接合线侧面并接合的球形压接。视必要时，施加超音波且加热电极部。
作用
采用与本发明有关的金合金线或含钯(Pd)的金合金线，以高速即使数十万次进行球形压接，第二次接合性亦不劣化的锂由虽然并不清楚，但推测如下所述。也就是说，通过电弧放电制作焊球时，或于第一次接合时，使微量的添加元素的氧化物形成并附着于毛细管的尖端部，但已附着的氧化物于每次第二次接合时，被认为会被转印至接合线侧。因此，于毛细管的尖端部上虽然略微的附着氧化物，但不致较该略微稍厚的淀积而成污染物。这种附着物稍厚的淀积于毛细管的尖端部并形成污染物之前，此种附着物可视作于第二次接合作业中被转印至接合线侧。结果，与本发明有关的金合金线或含钯(Pd)的金合金线被认为可发挥优越的第二次接合性的效果。当然，本发明的接合线，与至目前为止相同的于拉伸强度及真圆度方面发挥优越的效果。
实施例
于纯度99.999质量％的高纯度金或使含有指定量钯(Pd)的纯度99.999质量％的高纯度金内微量的添加指定量的添加元素，于真空熔解炉内熔解后，铸造而得表1所示组成的金合金晶锭。将该晶锭置入带槽轧辊进行轧辊加工，采用拉线机进行冷轧加工及中间退火，进行最终拉线加工成最终线俓25μm，通过最终热处理予以加工成伸长率4％。
表1-1
Figure GPA00001115654600091
Figure GPA00001115654600101
表1-2
Figure GPA00001115654600111
表1-3
(注)表内「从1」是专利文献2的实施例29，「从2」及「比1～3」的成分组成范围是超出本发明范围的比较例。
其它，从1-Be 10质量ppm、Sc 2质量ppm。
(50万次试验)
采用球形压接装置(K&S公司制造的商品名「Maxμm Plus」)对此金合金线连续的于IC芯片的Al电极上及外部配在线进行超音波并用球形压接50万次。此时，IC芯片侧的球形压接，是以球形压接负载0.2N、球形压接时间10ms、球形压接功率0.30w的条件进行。此外，外部配线侧的第二次接合，是以球形压接负载0.3N、球形压接时间10ms、球形压接功率0.40w的条件进行。
于这一试验，计数由于第二次接合的不能压接引起的球形压接装置停机的次数，该测定结果示于表2。
(3)熔融焊球的压接直径的真圆度
关于熔融焊球的压接直径的真圆度的评估，与进行50万次压接的试料另外以上述方法制作试料，采用700根接合线进行评估。也就是说，测定与超音波的施加方向平行的方向的压接直径及与超音波的施加方向垂直的方向的压接直径，将其比值于0.97～1.0的3范围内，以◎记号表示；于0.95～1.05范围内(于0.97～1.03范围内除外)，以○记号表示；于其它范围，以△记号表示。其测定结果示于表2。
表2：50万次试验结果
  编号   第二次不能压接数   真园度   编号   第二次不能压接数   真园度
  1   2   ○   39   3   ◎
  2   2   ○   40   2   ○
  3   2   ○   41   2   ○
  4   3   ○   42   1   ◎
  5   1   ○   43   1   ◎
  6   2   ○   44   2   ◎
  7   2   ○   45   2   ◎
  8   3   ○   46   2   ○
  9   2   ○   47   2   ○
  10   1   ○   48   2   ○
  11   2   ◎   49   1   ◎
  12   1   ○   50   0   ◎
  13   2   ○   51   1   ○
  14   0   ○   52   2   ◎
  15   1   ◎   53   1   ○
  16   1   ○   54   1   ○
  17   0   ○   55   1   ○
  18   2   ◎   56   1   ◎
  19   0   ◎   57   1   ○
  20   1   ◎   58   0   ○
  21   1   ◎   59   1   ◎
  22   0   ◎   60   1   ◎
  编号   第二次不能压接数   真园度   编号   第二次不能压接数   真园度
23 1 ◎ 61 0 ◎
  24   0   ◎   62   0   ◎
  25   0   ◎   63   0   ◎
  26   0   ◎   64   1   ○
  27   1   ◎   65   2   ○
  28   0   ◎   66   2   ○
  29   1   ◎   67   1   ◎
  30   2   ○   68   0   ○
  31   1   ○   69   1   ◎
  32   1   ◎   70   0   ◎
  33   1   ○
  34   0   ◎   从1   4   ◎
  35   0   ◎   从2   4   ○
  36   2   ○   比1   4   ○
  37   2   ○   比2   4   ◎
  38   2   ○   比3   5   ○
由以上的结果，于表1-1～3、表2，实施例编号1～6是权利要求1记载的组成范围，于第二次接合的接合不良，于50万次中有1～3次，真圆度方面，则是良好的。
由这些的结果，得知Mg、In、Al及Yb的微量添加效果是较大的。
此外，同样的上述表中的编号7～9，是于权利要求2的组成范围内，由于添加Ca，同样的降低接合不良，使真圆度提高。
以下同样的上述表中的编号10～21，是于权利要求3的组成范围内，对编号1～6的组成，可知再由于添加La、Lu、Sn、Sr的效果，再使第二次接合的不良数降低，亦提高真圆度。
编号22～35是于权利要求4的组成范围内，显示出再添加Ca的效果。
编号36～41是于权利要求项5的组成范围内，编号42～50是于权利要求6的组成范围内，各自对权利要求1及2的组成，添加Pd 0.1～1.0质量％，显示出同样的效果。
编号51～58是于权利要求7的组成范围内，编号59～70是于权利要求8的组成范围内，对上述权利要求3及4的组成显示出添加Pd的效果。
相对于这些，表内的从1、从2(指公知例1、2)，是于欠缺这些的添加元素的组成范围内，真圆度虽然良好，但是对50万次的接合次数会生成4次的第二次接合不良，又，对减少或超出本发明的添加元素而逸出该范围的情形，则表示于比1、比2、比3(指比较例1～3)。这些情形，同样的真圆度亦虽然良好，但是第二次接合不良有4～5次，反而显示出恶化的倾向，显示着需维持该组成范围一事是重要的。
如上述般，本发明的接合线于50万次的接合次数方面，均可使接合不良大幅降低。
产业上的可利用性
如果依照本发明的接合线时，则于由指定范围的Mg-In-Al-Yb的添加元素是而成的金(Au)合金或含钯(Pd)的金(Au)合金、这些的合金内，再微量添加钙(Ca)，及再于这些合金内微量添加镧(La)、镏(Lu)、锡(Sn)或锶(Sr)，是第二次接合性优越，而且与至目前为止的接合线同样的可发挥拉伸强度及压接直径的真圆度方面优越的效果，于提高半导体装置的可靠性方面是有效的。

Claims (8)

1.一种接合线，其特征在于，由镁5～100质量ppm、铟5～20质量ppm、铝5～20质量ppm、镱5～20质量ppm、及余量为纯度99.995质量％以上的而成的金合金。
2.一种接合线，其特征在于，由钙5～20质量ppm、镁5～100质量ppm、铟5～20质量ppm、铝5～20质量ppm、镱5～20质量ppm、及余量为纯度99.995质量％以上的金而成的金合金。
3.一种接合线，其特征在于，由镧5～20质量ppm、镏5～20质量ppm、锡5～100质量ppm及锶5～100质量ppm中至少一种以上、镁5～100质量ppm、铟5～20质量ppm、铝5～20质量ppm、镱5～20质量ppm、及余量为纯度99.995质量％以上的金而成的金合金。
4.一种接合线，其特征在于，由镧5～20质量ppm、镏5～20质量ppm、锡5～100质量ppm及锶5～100质量ppm中至少一种以上、钙5～20质量ppm、镁5～100质量ppm、铟5～20质量ppm、铝5～20质量ppm、镱5～20质量ppm、及余量为纯度99.995质量％以上的金而成的金合金。
5.一种接合线，其特征在于，由钯0.01～1.2质量％、镁5～100质量ppm、铟5～20质量ppm、铝5～20质量ppm、镱5～20质量ppm、及余量为纯度99.995质量％以上的金而成的金合金。
6.一种接合线，其特征在于，由钯0.01～1.2质量％、钙5～20质量ppm、镁5～100质量ppm、铟5～20质量ppm、铝5～20质量ppm、镱5～20质量ppm、及余量为纯度99.995质量％以上的金而成的金合金。
7.一种接合线，其特征在于，由镧5～20质量ppm、镏5～20质量ppm、锡5～100质量ppm及锶5～100质量ppm中至少一种以上、钯0.01～1.2质量％、镁5～100质量ppm、铟5～20质量ppm、铝5～20质量ppm、镱5～20质量ppm、及余量为纯度99.995质量％以上的金而成的金合金为特征的接合线。
8.一种接合线，其特征在于，由镧5～20质量ppm、镏5～20质量ppm、锡5～100质量ppm及锶5～100质量ppm中至少一种以上、钯0.01～1.2质量％、钙5～20质量ppm、镁5～100质量ppm、铟5～20质量ppm、铝5～20质量ppm、镱5～20质量ppm、及余量为纯度99.995质量％以上的金而成的金合金。
CN2008801134966A 2007-11-06 2008-09-11 接合线 Active CN101842505B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007289091A JP4150752B1 (ja) 2007-11-06 2007-11-06 ボンディングワイヤ
JP2007-289091 2007-11-06
PCT/JP2008/066442 WO2009060662A1 (ja) 2007-11-06 2008-09-11 ボンディングワイヤ

Publications (2)

Publication Number Publication Date
CN101842505A true CN101842505A (zh) 2010-09-22
CN101842505B CN101842505B (zh) 2012-12-26

Family

ID=39846513

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801134966A Active CN101842505B (zh) 2007-11-06 2008-09-11 接合线

Country Status (9)

Country Link
US (1) US20110058979A1 (zh)
EP (2) EP2208801B1 (zh)
JP (1) JP4150752B1 (zh)
KR (1) KR101124612B1 (zh)
CN (1) CN101842505B (zh)
AT (1) ATE552358T1 (zh)
MY (1) MY147817A (zh)
TW (1) TWI390056B (zh)
WO (1) WO2009060662A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103283009A (zh) * 2011-12-28 2013-09-04 田中电子工业株式会社 用于连接半导体装置的高纯度铜细线
CN105655263A (zh) * 2014-12-02 2016-06-08 先进科技新加坡有限公司 用于导线键合的拉伸测试的方法和系统

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2444999A4 (en) * 2009-06-18 2012-11-14 Rohm Co Ltd SEMICONDUCTOR DEVICE
WO2012117512A1 (ja) * 2011-03-01 2012-09-07 田中電子工業株式会社 金（Ａｕ）合金ボンディングワイヤ
CN102664173A (zh) * 2012-04-20 2012-09-12 日月光半导体制造股份有限公司 用于半导体装置的导线构造及其制造方法
TWI528481B (zh) * 2014-02-13 2016-04-01 新川股份有限公司 球形成裝置、打線裝置以及球形成方法
CN113584355A (zh) * 2021-08-03 2021-11-02 上杭县紫金佳博电子新材料科技有限公司 一种键合用铝基合金母线及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330329A (en) * 1979-11-28 1982-05-18 Tanaka Denshi Kogyo Kabushiki Kaisha Gold bonding wire for semiconductor elements and the semiconductor element
JPS5965439A (ja) * 1982-10-06 1984-04-13 Sumitomo Metal Mining Co Ltd ボンデイングワイヤ−
FR2581732A1 (fr) 1985-05-10 1986-11-14 Fremy Raoul Dispositif d'arret pour fluides a double obturateur tournant
JPS63145729A (ja) * 1986-03-28 1988-06-17 Nittetsu Micro Metal:Kk 半導体素子ボンデイング用金線
CN1027822C (zh) * 1991-12-12 1995-03-08 中国有色金属工业总公司昆明贵金属研究所 银基合金电接触材料
JPH08127828A (ja) * 1994-10-28 1996-05-21 Tanaka Denshi Kogyo Kk ボンディング用金線
JPH08193233A (ja) * 1995-01-12 1996-07-30 Mitsubishi Materials Corp 半導体装置用金合金細線
JP3579493B2 (ja) * 1995-04-20 2004-10-20 新日本製鐵株式会社 半導体素子用金合金細線
JP3657087B2 (ja) 1996-07-31 2005-06-08 田中電子工業株式会社 ウエッジボンディング用金合金線
JP3751104B2 (ja) * 1997-02-20 2006-03-01 田中電子工業株式会社 半導体素子ボンディング用金合金線
JP3669811B2 (ja) * 1997-04-25 2005-07-13 田中電子工業株式会社 半導体素子ボンディング用金合金線
JP3669809B2 (ja) * 1997-04-25 2005-07-13 田中電子工業株式会社 半導体素子ボンディング用金合金線
JPH1145902A (ja) * 1997-07-25 1999-02-16 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JPH11186314A (ja) * 1997-12-17 1999-07-09 Sumitomo Metal Mining Co Ltd ボンディングワイヤ
JP2000040710A (ja) * 1998-07-24 2000-02-08 Sumitomo Metal Mining Co Ltd ボンディング用金合金細線
US20080050267A1 (en) * 2004-09-30 2008-02-28 Hiroshi Murai Au Alloy Bonding Wire
JP5311715B2 (ja) * 2005-01-24 2013-10-09 新日鉄住金マテリアルズ株式会社 半導体素子接続用金線
JP4793989B2 (ja) * 2006-03-29 2011-10-12 田中電子工業株式会社 高い初期接合性、高い接合信頼性および圧着ボールの高い真円性を有するボンディングワイヤ用金合金線

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103283009A (zh) * 2011-12-28 2013-09-04 田中电子工业株式会社 用于连接半导体装置的高纯度铜细线
CN103283009B (zh) * 2011-12-28 2016-02-03 田中电子工业株式会社 用于连接半导体装置的高纯度铜细线
CN105655263A (zh) * 2014-12-02 2016-06-08 先进科技新加坡有限公司 用于导线键合的拉伸测试的方法和系统
CN105655263B (zh) * 2014-12-02 2019-03-22 先进科技新加坡有限公司 用于导线键合的拉伸测试的方法和系统

Also Published As

Publication number Publication date
WO2009060662A1 (ja) 2009-05-14
JP2009114499A (ja) 2009-05-28
TWI390056B (zh) 2013-03-21
ATE552358T1 (de) 2012-04-15
EP2208801B1 (en) 2012-04-04
CN101842505B (zh) 2012-12-26
JP4150752B1 (ja) 2008-09-17
EP2369023A1 (en) 2011-09-28
MY147817A (en) 2013-01-31
US20110058979A1 (en) 2011-03-10
EP2208801A4 (en) 2010-10-20
EP2208801A1 (en) 2010-07-21
KR20090087123A (ko) 2009-08-14
KR101124612B1 (ko) 2012-03-22
TW200923107A (en) 2009-06-01

Similar Documents

Publication Publication Date Title
CN101842505B (zh) 接合线
TWI567211B (zh) Connection lines for semiconductor devices
KR101583865B1 (ko) Ａｇ-Ａｕ-Ｐｄ를 기본으로 하는 합금계 본딩 와이어
US20160074971A1 (en) Lead-Free Solder Alloy
JP2008085320A (ja) 半導体装置用銅合金ボンディングワイヤ
EP1160344B1 (en) Gold wire for semiconductor element connection and semiconductor element connection method
CN111344844B (zh) 钎焊接头和钎焊接头的形成方法
TWI764972B (zh) 半導體裝置用接合導線
JPH10180480A (ja) 無鉛半田材料及びそれを用いた電子部品
JP3344924B2 (ja) 酸化膜密着性の高いリードフレーム用銅合金
JP3323185B2 (ja) 半導体素子接続用金線
JP3907534B2 (ja) ボンディング用金合金線
WO2017104153A1 (ja) 半導体装置用ボンディングワイヤ
JP3445616B2 (ja) 半導体素子用金合金細線
JP3641231B2 (ja) 半導体装置及び半導体装置用ボンディングワイヤ
JPH10303236A (ja) 半導体素子ボンディング用金合金線
JP3747023B2 (ja) 半導体用金ボンディングワイヤ
KR20240058199A (ko) 땜납 합금, 땜납 볼, 땜납 프리폼, 땜납 페이스트 및 솔더 조인트
US20230402422A1 (en) Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
JP2023087638A (ja) ボンディングワイヤ及び半導体装置
JP2014136236A (ja) ＰｂフリーＩｎ系はんだ合金
JPH1126491A (ja) 半導体素子用金合金細線
JPH05175271A (ja) 半導体素子のボンディング用Ａｕ線
JPH08102472A (ja) 半導体装置用パラジウム合金細線

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant