JPH10303236A - 半導体素子ボンディング用金合金線 - Google Patents
半導体素子ボンディング用金合金線Info
- Publication number
- JPH10303236A JPH10303236A JP9109055A JP10905597A JPH10303236A JP H10303236 A JPH10303236 A JP H10303236A JP 9109055 A JP9109055 A JP 9109055A JP 10905597 A JP10905597 A JP 10905597A JP H10303236 A JPH10303236 A JP H10303236A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- weight
- bonding
- lead frame
- alloy wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/2076—Diameter ranges equal to or larger than 100 microns
Abstract
置が過酷な熱サイクルの環境に晒された場合でも、断線
を抑制する効果が向上すること、及びボンディング時の
ループ形状を安定させる為に、ボンディング時の加熱温
度を150℃と低温度で行いながらセカンド側接合点で
の接合性、とりわけピール強度及び振動破断性能が向上
した金合金線を提供すること。 【解決手段】 銀(Ag)を0.6〜50重量%、C
u,In,Sn,Pb,Sb,Ti,La,Eu,Yb
のうち少なくとも1種を1〜500重量ppm 、及び残部
が金及び不可避不純物からなる半導体素子ボンディング
用金合金線。
Description
と外部リード部を接続するために使用するボンディング
用金合金線に関する。
の半導体素子の電極と外部リードを接続する技術として
は、純度99.99重量%以上の高純度金に他の金属元
素を微量含有させた金合金線を用いて配線する超音波併
用熱圧着ボンディング法が主として用いられている。
より配線し、ループを形成した状態を図1に示す。1は
ICチップ、2はICチップ上のAl電極、3は金合金
線、4はリードフレーム、5はファースト側接合点、6
はセカンド側接合点である。最近半導体装置は外部リー
ド材料として放熱性、コストを考慮して銅合金製のリー
ドフレームを用いる事が多くなってきた。銅合金製のリ
ードフレームを用いた場合、封止用樹脂とリードフレー
ムの熱膨張係数の差が大きく、半導体装置の作動による
温度上昇によってループを形成した金合金線に外部応力
が加わり、とりわけ半導体装置が過酷な熱サイクルの環
境に晒された場合、断線を生じ易くなるという問題があ
る。
が高まる中で、ICチップの多ピン化及びこれに伴う狭
ピッチ化が要求されている。多ピン化、狭ピッチ化を達
成する為には、ループ形状が安定している事が必要であ
る。一方前記の超音波併用熱圧着ボンディング法で配線
を行う際、リードフレーム下部に設置された熱源により
150〜250℃で加熱されている。この時加熱温度が
高いと接着性は良いものの、リードフレームのそりが生
じ易くなりループ形状にばらつきが生じ易くなる。また
加熱温度が低いとループ形状は安定するものの低温接合
であるため、金合金線とリードフレームの接合点(以下
セカンド側接合点という)での接合性に問題が生じてく
る。この為ループ形状にばらつきが生じることを抑制す
る為にボンディング時の加熱温度を150℃と低温度で
行いながらセカンド側接合点での接合性に優れた金合金
線が要求されている。
開昭52−51867号公報には所定量のFe,Co,
Ag等を金に含有させることによりボンディングワイヤ
の強度の向上に効果のあることが提案されている。また
特開昭55−158642号、特開昭56−19628
号、特開昭56−19629号公報等には所定量のAg
又はそれに加えてPdやFe等を金に含有させることに
よりボンディングワイヤの強度の向上とボールボンディ
ングの接合強度の向上に効果のあることが提案されてい
る。
においては、前述の要求に対して未だ不十分である。本
発明は上述したような事情に鑑みてなされたものであ
り、その目的とするところは、銅合金製のリードフレー
ムを用いた半導体装置が過酷な熱サイクルの環境に晒さ
れた場合でも、断線を抑制する効果が向上すること及び
ボンディング時のループ形状を安定させる為に、ボンデ
ィング時の加熱温度を150℃と低温度で行いながらセ
カンド側接合点での接合性、とりわけピール強度及び振
動破断性能が向上した金合金線を提供することである。
重ねた結果、所定量のAgとCu,In,Sn,Pb,
Sb,Ti,La,Eu,Ybのうち少なくとも1種、
及び残部が金と不可避不純物からなる組成の金合金線と
することにより、前述の目的を達成し得ることを知見
し、本発明を完成するに至った。
Sn,Pb,Sb,Ti,La,Eu,Ybのうち少な
くとも1種を1〜500重量ppm 、及び残部が金及び不
可避不純物からなることを特徴とする半導体素子ボンデ
ィング用金合金線。 (2)銀(Ag)を0.6〜50重量%、Cu,La,
Euのうち少なくとも1種を1〜500重量ppm 、及び
残部が金及び不可避不純物からなることを特徴とする半
導体素子ボンディング用金合金線。
99重量%以上に精製した高純度金を用いることが好ま
しい。更に好ましくは99.995重量%以上であり、
最も好ましくは99.999重量%以上である。この為
合金中の不可避不純物は0.01重量%以下が好まし
い。更に好ましくは0.005重量%以下であり、最も
好ましくは0.001重量%以下である。
In,Sn,Pb,Sb,Ti,La,Eu,Ybのう
ち少なくとも1種との共存において、Agを含有した組
成とすることにより、前記課題を達成することが出来
る。この共存組成においてAgの含有量が0.6重量%
以上になると、0.6重量%未満のものと対比してセカ
ンド側の接合性が向上してくる。即ちピール強度が大き
くなり、振動破断性能が向上してくる。又熱サイクル後
の断線性能も向上してくる。共存組成に於けるAgの含
有量が50重量%を超えると、前記セカンド側の接合性
と熱サイクル後の断線性能がともに低下してくる。この
為前記共存組成におけるAgの含有量を0.6〜50重
量%と定めた。
て、所定量のCu,In,Sn,Pb,Sb,Ti,L
a,Eu,Ybのうち少なくとも1種を含有した組成と
することにより、前記課題を達成することが出来る。こ
の共存組成とすることにより、金合金線の伸び率にかか
わらず、前記課題を達成することが出来る。
Pb,Sb,Ti,La,Eu,Ybのうち少なくとも
1種の含有量が1重量ppm 以上になると、1重量ppm 未
満のものと対比してセカンド側の接合性が向上してくる
とともに熱サイクル後の断線性能も向上してくる。C
u,In,Sn,Pb,Sb,Ti,La,Eu,Yb
のうち少なくとも1種の含有量が500重量ppm を超え
ると、セカンド側の接合性と熱サイクル後の断線性能が
ともに低下してくる。この為前記共存組成におけるC
u,In,Sn,Pb,Sb,Ti,La,Eu,Yb
のうち少なくとも1種の含有量を1〜500重量ppm と
定めた。
Sn,Pb,Sb,Ti,La,Eu,Ybのうち少な
くとも1種がCu,La,Euのうち少なくとも1種で
あると、セカンド側の接合性と熱サイクル後の断線性能
が更に向上してくる。この為前記共存組成におけるC
u,In,Sn,Pb,Sb,Ti,La,Eu,Yb
のうち少なくとも1種はCu,La,Euであることが
好ましい。
を説明する。高純度金に所定量の元素を添加し、真空溶
解炉で溶解した後インゴットに鋳造する。該インゴット
に溝ロール、伸線機を用いた冷間加工と中間アニールを
施し、最終冷間加工により直径10〜100μmの細線
とした後最終アニールを施すものである。
ル温度を変えることにより行う。本発明に於いて伸び率
は金合金線を標点距離を100mmとして引張速度100
mm/分で引張試験機で引っ張り、破断した時の伸び量を
測定して次式の値を伸び率とする。
図形から測定することが好ましい。本発明になる半導体
素子ボンディング用金合金線は半導体装置の実装に際し
て、ICチップ等の半導体素子をリードフレームに接続
する超音波併用熱圧着ボンディング法で好ましく用いら
れる。特にはリードフレームとして銅製リードフレーム
を用いる半導体装置用に好ましく用いられる。
量のAg及びCuを添加し真空溶解炉で溶解した後、鋳
造して表1に示す組成の金合金インゴットを得た。これ
に溝ロール、伸線機を用いた冷間加工と中間アニールを
施し、最終冷間加工により直径30μmとし、伸び率4
%となるように最終アニールを行った。
川株式会社製 UTC−50型)を用いて加熱温度15
0℃でICチップのAl電極と銅合金リードフレームを
超音波併用熱圧着ボンディング法でボンディングした。
そして、ピン数100個のボンディングした試料を作成
した。次いで試料をエポキシ樹脂で樹脂封止した後、−
10℃×30分と150℃×30分の熱サイクルテスト
を100回行った。
により断線の有無を確認し、熱サイクル後の破断率を求
めその結果を表1に示した。更にボンディングした試料
のリードフレーム側即ちセカンド側のピール強度及び振
動破断性能を測定した。ピール強度は前記直径30μm
のピール荷重で表示した。
電極、13は金合金線、14はリードフレーム、15は
鉄製台、16はリードフレーム固定用磁石、17は振動
子である。リードフレーム14をリードフレーム固定用
磁石16で固定し、ICチップ11を搭載した部分を振
動子17で上下方向(矢印方向)に振動させた。周波数
100Hz、上下振幅合計0.4mm、振動数20000回
振動させた後、400倍の金属顕微鏡を用いてリードフ
レーム側即ちセカンド側のワイヤの破断数を調査した。
300箇所調査しその破断数の割合を振動破断率として
表1に示した。
こと以外は実施例1と同様にして直径30μmの線に仕
上げ、熱サイクル後の破断率、セカンド側のピール強度
及び振動破断率を実施例1と同様にして測定し、その測
定結果を表1〜3に示した。
u,In,Sn,Pb,Sb,Ti,La,Eu,Yb
のうち少なくとも1種を1〜500重量ppm 含有した組
成である実施例1〜40は、熱サイクル後の破断率が
0.8%以下であり、ピール強度は11.2〜13.9
g、振動破断率は0.9%以下と、優れた効果を示し
た。
〜50重量%、及びCu,Eu,Laのうち少なくとも
1種を1〜500重量ppm 含有した組成では、熱サイク
ル後の破断率が0%であり、ピール強度は12.2〜1
3.9g、振動破断率は0%と、さらに優れた効果を示
した。この為好ましくは、Agを0.6〜50重量%、
Cu,La,Euのうち少なくとも1種を1〜500重
量ppm 、及び残部が金及び不可避不純物からなる組成と
することである。
い高純度金を用いた比較例1は、熱サイクル後の破断率
が5.9%、ピール強度は1.6g、振動破断率は4.
8%と何れも悪いものであった。 (4)高純度金に本発明の必須成分であるAgを含有す
るものの、Agの含有量が0.6重量%未満である比較
例2、その含有量が50重量%を超える比較例3は、熱
サイクル後の破断率が2.6〜3.8%、ピール強度は
3.6〜3.7g、振動破断率は3.0〜3.3%と何
れも高純度金と対比すると効果は得られているものの、
本発明に於いては更に優れた効果が得られていることが
判る。
0.6〜50重量%のAgを含有するものの、1〜50
0重量ppm のCu,In,Sn,Pb,Sb,Ti,L
a,Eu,Ybのうち少なくとも1種を含有せずに、4
00重量ppm のIrを含有する比較例4、100重量pp
m のCoを含有する比較例5は、熱サイクル後の破断率
が3.2〜3.3%、ピール強度は3.4〜4.8g、
振動破断率は2.7〜3.0%と何れも高純度金と対比
すると効果は得られているものの、本発明に於いては更
に優れた効果が得られていることが判る。
0.6〜50重量%のAgを含有するものの、1〜50
0重量ppm のCu,In,Sn,Pb,Sb,Ti,L
a,Eu,Ybのうち少なくとも1種を含有せずに、伸
び率が10%である比較例6は、熱サイクル後の破断率
が3.1%、ピール強度は5.3g、振動破断率は2.
4%と何れも高純度金と対比すると効果は得られている
ものの、本発明に於いては更に優れた効果が得られてい
ることが判る。
対比すると20重量%のAgのみを含有し、伸び率が1
0%である比較例6と対比して、20重量%のAgと1
00重量ppm のCuを含有し、伸び率が4%と10%で
ある実施例3、実施例32は、セカンド側の接合性が向
上してくるとともに熱サイクル後の断線性能も向上して
くる。このことから所定量のAgに加えて所定量のCu
を含有すると伸び率にかかわらず、本発明の課題に対し
て効果がある事が判る。
i,La,Eu,Ybについても、本発明の課題に対し
て効果がある事が判る。
Cu,In,Sn,Pb,Sb,Ti,La,Eu,Y
bのうち少なくとも1種を含有し残部が金及び不純物か
らなる組成を有する半導体素子ボンディング用金合金線
によれば、銅合金製のリードフレームを用いた半導体装
置が過酷な熱サイクルの環境に晒された場合でも、断線
を抑制する効果が向上すること及びボンディング時のル
ープ形状を安定させる為に、ボンディング時の加熱温度
を150℃と低温度で行いながらセカンド側接合点での
接合性、とりわけピール強度及び振動破断性能が向上に
効果的である。
量のCu,La,Euのうち少なくとも1種を含有し残
部が金及び不純物からなる組成とすることにより、さら
に優れた効果を示すものである。
グした半導体素子を示す。
Claims (2)
- 【請求項1】 銀(Ag)を0.6〜50重量%、C
u,In,Sn,Pb,Sb,Ti,La,Eu,Yb
のうち少なくとも1種を1〜500重量ppm 、及び残部
が金及び不可避不純物からなることを特徴とする半導体
素子ボンディング用金合金線。 - 【請求項2】 銀(Ag)を0.6〜50重量%、C
u,La,Euのうち少なくとも1種を1〜500重量
ppm 、及び残部が金及び不可避不純物からなることを特
徴とする半導体素子ボンディング用金合金線。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100427749B1 (ko) * | 2002-05-07 | 2004-04-28 | 엠케이전자 주식회사 | 반도체 소자 본딩용 금-은 합금 와이어 |
WO2008132919A1 (ja) * | 2007-04-17 | 2008-11-06 | Tanaka Denshi Kogyo K.K. | 高信頼性金合金ボンディングワイヤ及び半導体装置 |
JP2011129602A (ja) * | 2009-12-16 | 2011-06-30 | Tanaka Electronics Ind Co Ltd | 高強度、高伸び率金合金ボンディングワイヤ |
-
1997
- 1997-04-25 JP JP10905597A patent/JP3669810B2/ja not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100427749B1 (ko) * | 2002-05-07 | 2004-04-28 | 엠케이전자 주식회사 | 반도체 소자 본딩용 금-은 합금 와이어 |
WO2008132919A1 (ja) * | 2007-04-17 | 2008-11-06 | Tanaka Denshi Kogyo K.K. | 高信頼性金合金ボンディングワイヤ及び半導体装置 |
JP2011129602A (ja) * | 2009-12-16 | 2011-06-30 | Tanaka Electronics Ind Co Ltd | 高強度、高伸び率金合金ボンディングワイヤ |
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