WO2008132919A1 - 高信頼性金合金ボンディングワイヤ及び半導体装置 - Google Patents

高信頼性金合金ボンディングワイヤ及び半導体装置 Download PDF

Info

Publication number
WO2008132919A1
WO2008132919A1 PCT/JP2008/055702 JP2008055702W WO2008132919A1 WO 2008132919 A1 WO2008132919 A1 WO 2008132919A1 JP 2008055702 W JP2008055702 W JP 2008055702W WO 2008132919 A1 WO2008132919 A1 WO 2008132919A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
bonding wire
gold alloy
alloy bonding
highly reliable
Prior art date
Application number
PCT/JP2008/055702
Other languages
English (en)
French (fr)
Inventor
Hiroshi Murai
Jun Chiba
Fujio Amada
Original Assignee
Tanaka Denshi Kogyo K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo K.K. filed Critical Tanaka Denshi Kogyo K.K.
Priority to EP08738890A priority Critical patent/EP2139032A4/en
Priority to US12/297,263 priority patent/US20100171222A1/en
Publication of WO2008132919A1 publication Critical patent/WO2008132919A1/ja

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/02Alloys based on gold
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227Rods, wires
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013Au as the principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/08Non-ferrous metals or alloys
    • B23K2103/10Aluminium or alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4801Structure
    • H01L2224/48011Length
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4845Details of ball bonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/011Groups of the periodic table
    • H01L2924/01105Rare earth metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012Semiconductor purity grades
    • H01L2924/012044N purity grades, i.e. 99.99%
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20752Diameter ranges larger or equal to 20 microns less than 30 microns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/20755Diameter ranges larger or equal to 50 microns less than 60 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

半導体装置のAl電極に対する低電気抵抗で接合信頼性を向上したAu合金ボンディングワイヤ及び該ワイヤによりAl電極パッドに接合した半導体装置を提供するために、Agを0.02~0.3質量%、GeまたはSiの少なくとも1 種を合計で10~200質量ppmおよび/またはAlまたはCuの少なくとも1 種を合計で10~200質量ppm含有し、残部がAuからなることを特徴とする金合金ボンディングワイヤ、及び、上記金合金ボンディングワイヤにより、AlまたはAl合金電極パッドと接続した半導体装置を用いる。
PCT/JP2008/055702 2007-04-17 2008-03-26 高信頼性金合金ボンディングワイヤ及び半導体装置 WO2008132919A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08738890A EP2139032A4 (en) 2007-04-17 2008-03-26 VERY RELIABLE GOLD ALLOY CONNECTION WIRE AND SEMICONDUCTOR DEVICE
US12/297,263 US20100171222A1 (en) 2007-04-17 2008-03-26 HIGH RELIABILITY Au ALLOY BONDING WIRE AND SEMICONDUCTOR DEVICE OF SAME

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007108733A JP4130843B1 (ja) 2007-04-17 2007-04-17 高信頼性金合金ボンディングワイヤ及び半導体装置
JP2007-108733 2007-04-17

Publications (1)

Publication Number Publication Date
WO2008132919A1 true WO2008132919A1 (ja) 2008-11-06

Family

ID=39730558

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055702 WO2008132919A1 (ja) 2007-04-17 2008-03-26 高信頼性金合金ボンディングワイヤ及び半導体装置

Country Status (8)

Country Link
US (1) US20100171222A1 (ja)
EP (1) EP2139032A4 (ja)
JP (1) JP4130843B1 (ja)
KR (1) KR20100014748A (ja)
CN (1) CN101663743A (ja)
MY (1) MY148234A (ja)
TW (1) TW200844241A (ja)
WO (1) WO2008132919A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY164643A (en) * 2009-07-30 2018-01-30 Nippon Steel & Sumikin Mat Co Bonding wire for semiconductor
US8692118B2 (en) 2011-06-24 2014-04-08 Tessera, Inc. Reliable wire structure and method
JP5080682B1 (ja) * 2011-12-02 2012-11-21 田中電子工業株式会社 金−白金−パラジウム合金ボンディングワイヤ
CN102489896A (zh) * 2011-12-18 2012-06-13 湖南科技大学 钎焊金属基复合封装材料的中温钎料薄带及其制备、钎焊
CN109003903B (zh) * 2018-07-02 2020-08-18 上杭县紫金佳博电子新材料科技有限公司 一种键合金丝及其制备方法
CN110284021B (zh) * 2019-06-27 2020-06-30 袁海 提高足金、足银硬度的中间合金及其制备方法与应用

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251867A (en) 1975-10-23 1977-04-26 Nec Corp Bonding wire for semiconductor device
JPS6487734A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for gold extra fine wire
JPH02259032A (ja) * 1989-03-31 1990-10-19 Tatsuta Electric Wire & Cable Co Ltd ボンディング用金合金細線
JPH1083716A (ja) * 1996-09-09 1998-03-31 Nippon Steel Corp 半導体素子用金合金細線および半導体装置
JPH1098063A (ja) * 1996-07-31 1998-04-14 Tanaka Denshi Kogyo Kk ウエッジボンディング用金合金線
JPH10303239A (ja) * 1997-04-30 1998-11-13 Nippon Steel Corp 半導体素子
JPH10303236A (ja) * 1997-04-25 1998-11-13 Tanaka Denshi Kogyo Kk 半導体素子ボンディング用金合金線
JPH11126788A (ja) * 1997-10-23 1999-05-11 Tanaka Electron Ind Co Ltd Icチップ接続用金合金線

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3579493B2 (ja) * 1995-04-20 2004-10-20 新日本製鐵株式会社 半導体素子用金合金細線
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
JP2003007757A (ja) * 2001-06-18 2003-01-10 Sumitomo Metal Mining Co Ltd 半導体素子ボンディング用金合金ワイヤ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251867A (en) 1975-10-23 1977-04-26 Nec Corp Bonding wire for semiconductor device
JPS6487734A (en) * 1987-09-29 1989-03-31 Tanaka Precious Metal Ind Material for gold extra fine wire
JPH02259032A (ja) * 1989-03-31 1990-10-19 Tatsuta Electric Wire & Cable Co Ltd ボンディング用金合金細線
JPH1098063A (ja) * 1996-07-31 1998-04-14 Tanaka Denshi Kogyo Kk ウエッジボンディング用金合金線
JPH1083716A (ja) * 1996-09-09 1998-03-31 Nippon Steel Corp 半導体素子用金合金細線および半導体装置
JPH10303236A (ja) * 1997-04-25 1998-11-13 Tanaka Denshi Kogyo Kk 半導体素子ボンディング用金合金線
JPH10303239A (ja) * 1997-04-30 1998-11-13 Nippon Steel Corp 半導体素子
JPH11126788A (ja) * 1997-10-23 1999-05-11 Tanaka Electron Ind Co Ltd Icチップ接続用金合金線

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2139032A4

Also Published As

Publication number Publication date
EP2139032A1 (en) 2009-12-30
CN101663743A (zh) 2010-03-03
TW200844241A (en) 2008-11-16
MY148234A (en) 2013-03-29
KR20100014748A (ko) 2010-02-11
EP2139032A4 (en) 2009-12-30
US20100171222A1 (en) 2010-07-08
JP2008270371A (ja) 2008-11-06
JP4130843B1 (ja) 2008-08-06

Similar Documents

Publication Publication Date Title
WO2008132919A1 (ja) 高信頼性金合金ボンディングワイヤ及び半導体装置
WO2012003315A3 (en) Corrosion-resistant copper-to-aluminum bonds
WO2005106497A3 (en) Led bonding structures and methods of fabricating led bonding structures
EP2393307A3 (en) Semiconductor device and microphone
TWI371808B (en) Au alloy bonding wire
EP2373059A3 (en) Semiconductor device and microphone
WO2007022399A3 (en) Semiconductor assembly and packaging for high current and low inductance
WO2011081696A3 (en) Dap ground bond enhancement
WO2007146307A3 (en) Stack die packages
EP2960931A3 (en) Copper bond wire
TW200802646A (en) Semiconductor chip having solder bump and method of frabricating the same
EP2447380A4 (en) COPPER ALLOY CONNECTING WIRE FOR SEMICONDUCTOR
MY164643A (en) Bonding wire for semiconductor
MY164384A (en) Bonding wire for semiconductor device
TW200639954A (en) Contact structure on chip and package thereof
TW200627584A (en) Novel method for copper wafer wire bonding
TW200704787A (en) Gold alloy wire for use as bonding wire exhibiting high bonding reliability, high circularity of press bonded ball, high straight advancing property and high resin flow resistance
WO2006119485A3 (en) Wirebonded device packages for semiconductor devices having elongated electrodes
EP2903022A3 (en) Use of a Sn-Ni-(Cu)-(P) solder alloy for flip chip bonding and a corresponding solder ball
WO2002011203A3 (en) Plastic encapsulated semiconductor devices with improved corrosion resistance
MY140911A (en) Au bonding wire for semiconductor device
WO2004075347A3 (en) Wirebonding insulated wire
WO2009086909A3 (en) Led assembly with a protective frame
TW200703532A (en) Gold alloy wire for use as bonding wire exhibiting high initial bonding capability, high bonding reliability, high circularity of press bonded ball, high straight advancing property, high resin flow resistance and low specific resistance
TW200707604A (en) Gold alloy wire for use as bonding wire exhibiting high initial bonding capability, high bonding reliability, high circularity of press bonded ball, high straight advancing property and high resin flow resistance

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880012540.4

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020087018732

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 12297263

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2008738890

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08738890

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12009501483

Country of ref document: PH

NENP Non-entry into the national phase

Ref country code: DE