CN101663743A - 高可靠性金合金接合线及半导体装置 - Google Patents

高可靠性金合金接合线及半导体装置 Download PDF

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CN101663743A
CN101663743A CN200880012540A CN200880012540A CN101663743A CN 101663743 A CN101663743 A CN 101663743A CN 200880012540 A CN200880012540 A CN 200880012540A CN 200880012540 A CN200880012540 A CN 200880012540A CN 101663743 A CN101663743 A CN 101663743A
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gold
aluminium
alloy
quality
closing line
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村井博
千叶淳
天田富士夫
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
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Abstract

提供以对半导体装置的铝电极的低电阻，提高接合可靠性的金合金接合线和由该接合线接合到铝电极晶垫的半导体装置。一种金合金接合线，以含有银0.02～0.3质量％、硅或锗的至少一种的合计为10～200质量ppm及/或铝或铜的至少一种的合计为10～200质量ppm、余量为金而成的为特征。再者，一种半导体装置，通过前述金合金接合线连接到铝或铝合金晶垫而成的为特征。

Description

高可靠性金合金接合线及半导体装置
技术领域
本发明是有关半导体装置所用的IC芯片电极与外部引线等基版间的连接较合适的金合金接合线，采用这一接合线的半导体装置和这一接合线及铝或铝合金间的接合构造。特别是涉及车辆载置用或高速装置用的高温环境下所使用的金合金，采用这一接合线的半导体装置和这一接合线及铝或铝合金间的接合构造。
背景技术
长久以来，作为半导体装置的IC芯片电极与外部引线的连接金线，以使高纯度金内含有微量其它的金属元素的纯度99.99质量％以上的金线，因可靠性优越而较常被使用着。这种纯金线，其中一端是通过为超声波并用热压接接合法使连接到基版上的外部引线等IC芯片电极上的纯铝晶垫(pad)或铝合金晶垫，另一端则予连接到基版上的外部引线等，其后予以封装树脂使成半导体装置。这种铝合金晶垫通常是通过真空蒸镀等方式予以形成。
但是，经予封装树脂的半导体装置被要求如果在高温的非常严格的使用环境被使用时有高度的可靠性的车辆载置用IC或，如果以操作温度较高的高频用IC等被使用时，则被称作柯肯特尔效应(Kirkendall Voids)的空隙或裂痕，或发生由于封装树脂中所含的卤素成分引起腐蚀等的现象，导致使于铝晶垫及铝合金晶垫与纯金线间的接合接口的电阻值升高或接合强度降低。至于铝合金晶垫，通常为铝-铜合金，铝-硅合金，铝-硅-铜合金等。因此，就被要求需确保较目前为止较高的接合可靠性(在某种环境下的焊球接合(ball bonding)引起的接合接口的电阻值及接合强度的持续性)，以金-1质量％钯合金的接合线正被使用着。
这种金-钯合金的接合线，于高温环境下的铝合金晶垫与纯金线间的接合接口，因为可以通过钯抑制金的扩散到铝晶垫中，被称作易遭受由于接合接口的卤素成分引起的腐蚀的金属间化合物Au4Al的形成较受阻害，可抑制铝合金晶垫与金合金线间的接合部的劣化，而有不至于导致接合强度的降低的优点。这种金-1质量％钯合金的接合线，与纯度99.99质量％以上的纯金线相比，虽有机械特性较优越，但是接合线的电气特性的比电阻值反较高。例如，相对于纯度99.99质量％的纯金线的比电阻值为2.3μΩ·cm，而金-1质量％钯合金则为3.0μΩ·cm。因此如果想要进行高密度实际安装时，则由于接合线的发热而有引起组件错误动作，或断线之外，会有使生成讯号的响应速度推迟的顾虑。如果将接合线的直径由25μm制成细到15μm时，则这种倾向则较强烈。而且，于金-1质量％钯合金的情形，详细的机构虽然并不清楚，但如果存在钯时，则于接合接口有可出乎意料之外的促使铝的氧化的情形。例如，由金-1质量％钯合金而成的接合线于没有封装树脂下，在大气中如果予以进行高温置放试验时，则也较已含有微量添加元素的纯度99.99质量％以上的金接合线会生成大量的铝氧化物Al2O3，而有变弱的情形。这种缺陷对半导体装置来说系致命的缺陷，由于欠缺接合可靠性，而成为金-1质量％钯合金接合线的实用化上的障碍。
另一方面，将金与全部可固熔的银予以合金化而使用作接合线的构想，以日本特开昭52-51867号公报即为人所知。因此，对纯度99.99质量％以上的金来说，以作为增强机械强度的微量添加元素而为人所知的Ca或La，就被考虑而试用于微量添加银的金合金的应用。其是以制得和纯度99.99质量％程度的纯金线的比电阻值约略同等的比电阻值为目的，于金内添加银0.05～0.95质量％，同时微量添加Ca、Y及稀土类元素之内的一种以上0.0001～0.005质量％的半导体装置用接合线(详见后述的「专利文献1」)。这一接合线是银0.05～0.95质量％，及Ca、Y及稀土类元素之内的一种以上0.0001～0.005质量％，余量为金及不可避免的杂质的金合金。此接合线以提供高强度，能够避免比电阻过度的上升，且不引起弧状连接线(loop)变形的半导体装置用合金接合线为目的(参阅同公报0010栏)。
「专利文献1」日本特开2003-7757号公报
然而，这一接合线由于银的添加量较少，于高温的严苛的使用环境下，有无法解决于金-银合金的接合线与铝或铝合金的晶垫间的接合接口变弱的至目前为止的缺点存在。其理由是这一金-银合金的接合线与一般晶垫材料的铝晶垫予以接合时，于接合接口上予以形成Au4Al，导致使用作半导体装置时提高电阻所引起的。
另一方面，针对这一点，即使增加银的添加量，虽然可抑制金-铝金属间化合物的生成，但是和添加量成比例因为也可提高接合线的比电阻，而不能成为解决手段。
另外，于以树脂模塑此半导体装置时，封装树脂中的卤素离子与Au4Al反应而使接合接口的强度降低的事实为最近才发现的。而且这一接合线虽然机械强度较高，但是由于已全部固溶的银的存在，和铝晶垫间的接合可靠性，反而较纯度99.99质量％程度的纯金线为差。
发明内容
本发明是为解决上述问题而予完成的。本发明的目的，是提供减少银的添加量同时维持接合线的比电阻与金接合线同等程度，同时使于接合接口上较难形成Au4Al金属间化合物，或由于接合部所形成的金属间化合物Au4Al较难腐蚀而可提高接合可靠性，而且具有与金-1质量％钯合金同等的机械强度的接合线。此外，本发明的目的，是提供采用此接合线而与铝或铝合金晶垫，尤其指铝晶垫连接的构造。
具体实施方式
本发明是系于已减少银的添加量的金合金内添加种种微量添加元素，予以细线化并制成接合线，将这些接合线连接至铝晶垫上，检查于已曝露在高温笼罩大气时的接合接口的金属间化合物的发生量。结果，对纯度99.99质量％以上的金已知可增强机械强度的Be或Ca或Y的微量添加元素，可以和确认出对已减少银的添加量的金合金并不具有抑制Au4Al等的金属间化合物成长的效果。本发明对各种微量添加元素进行检讨的结果，和银同时添加时，最后发现硅(Si)、锗(Ge)及镁(Mg)的第二族与铝(Al)及铜(Cu)的第二族的元素有抑制Au4Al等的金属间化合物的成长的效果，将铝晶垫取代成铝合金晶垫时也是相同的。但是，镁因提高比电阻，而不能采用作单独的微量添加元素。例如，弱添加120质量ppm程度时，则提高接合线的接合可靠性。然而，比电阻因提高0.1～0.2μΩ·cm程度，可知并不能利用于车辆载置用或高速装置用的接合线方面。于是，镁若能于可确保与纯度99.99质量％以上的纯金相同程度的比电阻范围内时，则可予利用作硅或锗的取代材料。在此，所谓与纯度99.99质量％以上的纯金相同程度的比电阻，是指考虑所发生的热量对纯金而言在增加10％的范围内。
(银)
银是如众所周知，可被视作即使少量时亦可完全的固溶于金之中，而形成金-银合金。因此，于金与铝的接合接口上形成Au4Al等的金-银的金属间化合物。但是，于锗(Ge)、硅(Si)、铝(Al)、铜(Cu)的至少一种的共存下，被视作可抑制金-银的金属间化合物的形成。
如果添加银，则使比电阻提高。因此，由于接合线的发热而使半导体装置错误动作之外，会出现讯号的响应速度迟缓等的不良影响。因此，为确保纯度99.99质量％以上的纯金相同程度的比电阻，将银的上限设成0.3质量％。上限的金-0.3质量％银合金，若为不含有微量添加元素时，制成接合线时的比电阻是在2.5μΩ·cm以下。此值与纯金的2.3μΩ·cm比较时，可将比电阻的增加止于较少的范围。因此，于此金-银合金内使含有微量添加元素时，发热可予比较的抑制。此外，于此金-银合金内使含有微量添加元素的合金，也不延缓响应速度。金-银合金线的比电阻以尽量低为较宜，于金-银合金内含有微量添加元素时则以2.5μΩ·cm以下为较宜。可以抑制成与纯度99.99质量以上的纯金相同程度的发热所致。如果考虑发热对半导体装置给予不良影响时，则以比电阻需更低为宜，以2.4μΩ·cm以下为较宜。
另一方面，如果银的添加量变少时，就不能获得金-银合金的形成效果，对金来说仅会使发挥微量添加元素的效应，成为未能抑制金-铝金属间化合物的形成。因此，将银的下限值设成0.02质量％。
(硅或锗)
硅或锗是抑制Au4Al等金-铝金属间化合物的成长，得知可确保接合线的接合可靠性。硅或锗是晶析于金-银合金之结晶晶粒并可抑制金的扩散，被视作抑制金-铝金属间化合物的成长。此外，硅因于铝合金晶垫中为使铝合金化的元素之一，将金-银合金的接合线予以焊球压接时，使铝于接合接口的热扩散引起的厚度梯度趋缓，可被视作减缓铝于金-银合金中的扩散速度。这种作用效果和后述的内容是相同的。
硅或锗的至少一种如果予以添加合计超过200质量ppm时，则于初期焊球内会生成缩孔，而降低接合强度。由而，将硅或锗的至少一种的合计量的上限设成200质量ppm。
另一方面，硅或锗的至少一种合计如果成为未满10质量ppm时，则于上述的金-银合金的结晶晶粒上晶析的量变少，即成未能抑制金-铝金属间化合物的成长。于是，将硅或锗的至少一种的合计量的下限设成10质量ppm。
(铝或铜)
铝或铜也和硅或锗同样的，得知可抑制Au4Al等金-铝金属间化合物的成长。但以铝为经予接合的晶垫的主成分元素。如果事先微量的添加铝于接合的金-铝合金接合线中时，进行焊球压接时，由铝晶垫及金-铝合金接合线间的狭小范围的热扩散引起的厚度梯度趋缓，铝至金-银合金中的扩散速度变缓。因此，得知有抑制金-铝金属间化合物的成长的作用。厚度梯度趋缓的理由是铝原本存在于金中所引起的，由于这种呈现均匀微细散布的铝会使铝由铝晶垫的渗入受阻，使热扩散变缓的结果，厚度梯度可被视作趋缓。这种微量添加铝的效应，不仅和铜的共同添加，与硅或锗的共同添加也予以观察。此外，铜也为了使于铝合金晶垫中予以合金化的元素，使焊球压接时的热扩散引起的铝的厚度梯度趋缓，减缓铝至金-银合金中的扩散速度，得知具有和铝的微量添加同样的作用，效应。
铝或铜的至少一种如果予以添加合计超过200质量ppm时，就成较难确保与纯度99.99质量％以上的纯金相同程度的比电阻，使讯号迟缓等的挂虑增加。于是，将铝或铜的至少一种的合计量的上限设成200质量ppm。
另一方面，铝或铜的至少一种合计若成为未满10质量ppm时，则于使和铝晶垫接合的金-银合金接合线的接口附近，由铝或铜的热扩散引起的厚度梯度变得急陡，即成未能抑制金-铝金属间化合物的成长。于是，将铝或铜的至少一种的合计量的下限设成10质量ppm。
(硅或锗)及(铝或铜)的共同添加
硅或锗及铝或铜的共同添加，是为使金-银合金接合线与铝晶垫间的接合接口上的热扩散引起的厚度梯度趋缓所引起的。通过由此种共同添加减缓于接合接口上的扩散速度，且通过硅、锗晶析于金结晶晶粒上，可使金的扩散减缓所引起的。
由上述可知，与本发明有关的金合金接合线，是以含有银0.02～0.3质量％、硅或锗的至少一种的合计为10～200质量ppm、余量为金而成的为特征。
此外，与本发明有关的金合金接合线，是以含有银0.02～0.3质量％、铝或铜的至少一种的合计为10～200质量ppm、余量为金而成的为特征。
此外，与本发明有关的半导体装置，是将以含有银0.02～0.3质量％、硅或锗的至少一种的合计为10～200质量ppm、余量为金而成的金合金接合线连接至铝或铝合金晶垫为特征。
此外，与本发明有关的半导体装置，是以含有银0.02～0.3质量％、铝或铜的至少一种的合计为10～200质量ppm、余量为金而成的金合金接合线连接到铝或铝合金晶垫为特征。
此外，与本发明有关的半导体装置，是以含有银0.02～0.3质量％、硅或锗的至少一种的合计为10～200质量ppm、余量为金而成的金合金接合线连接到铝或铝合金晶垫为特征。
如上述般，本发明的接合线用金合金线，因为可以抑制金·铝的金属间化合物的成长，可确保在高温环境下的接合线的接合可靠性，故不问在高温或常温的使用环境，可利用于半导体装置。此外，此金-银合金与铝晶垫或铝合金晶垫间的接合构造，即使于高温环境下也是稳定的，可以确保对半导体装置的接合可靠性。本发明的接合线用金合金线如此可获致产业上优越的功效。
实施例1
本发明的较佳具体实施例的金-银合金，是完全含有硅或锗、与铝及铜的微量添加元素，而且银的含有量也较微量添加元素的总含有量多时予以达成。尤其，在高温环境下银的含有量对微量添加元素的总含有量为5～10倍的范围时，可得金·铝已稳定的金属间化合物，结果可得即使在高温环境下也具有稳定的接合可靠性。
将具有表1所示的成分组成的金-银合金予以熔融铸造，由拉线加工，制成具有25μm的线的接合线用金-银合金线(以下称作本发明接合线)1～24和比较例用接合线用金-银合金线25～31(以下称作比较接合线)。测定这些接合线的比电阻，结果示于表1右栏内。于测定此值之际，试样数取5根，求取其平均值。前述接合线的比电阻是利用四端子法以数位多仪表(digital mulimeter)在室温、标点间鉅：100mm之条件下测定电阻值(Ω)，求取比电阻(μΩ·cm)＝电阻值(Ω)×接合线用金合金线之截面积(cm2)/10(cm)×106。
接着，将本发明接合线1～24及比较接合线25～31安装于KuliCke&Soffa制造的接合线焊接器(商品名MaXμm plus)，对半导体IC芯片经予载置的铝-0.5质量％铜合金而成的60μm方形铝合金晶垫，以加热温度200℃、弧状接合线长度5mm、弧状接合线高度220μm、压接焊球直径54μm、压接焊球高度8μm的条件下进行焊接，就常温和高温的接合可靠性评估进行评估。
(常温的接合可靠性评估试验)
将已接合的试样(对每一试样号码的接合线取100个)，于压接焊球正上方的弧状接合线的弯曲处挂上量具并进行拉伸试验。于拉伸试验的裂断会于颈部裂断或于压接焊球和铝合金晶垫的接合接口裂断，也就是说生成焊球提高的形态的任一种。因此，于颈部裂断的情形时，将于接合时的压接焊球和铝合金晶垫的接合接口的接合判断成良好，观察压接焊球，全部在颈部裂断的情形予以评估作○，而即使有1个时亦予评估作×。
如果依照表1的结果时，则于上述本发明范围的合金的组成，接合线的比电阻全部于2.31～2.62μΩ·cm的范围内，此外，于比较接合线方面，也对含银量较低的金-银系合金，于微量添加锗、硅、铝、铜的情形，比电阻就成为和本发明同样较低的值。且将已添加前述的钯的金-1钯合金的例示于比较接合线31。
此外，对常温的接合性方面，如试样编号26、29及30般，银或微量添加元素的范围偏离出本发明范围者则被发现可靠性降低。
(高温置放后的接合可靠性评估试验)
再者，若随着金属间化合物的成长，则生成由金与铝间的扩散速度的差异引起的肯特尔效应的空隙，于金及金属间化合物的接口生成裂痕。如果生成这些空隙或裂痕时，则接合强度降低。即使，接合强度降低，也有导通部，电仍能流动，但接合成为不稳定是不能否定的。为评估空隙或裂痕的生成程度，测定于175℃空气中存贮200小时后的拉伸强度。如果空隙或裂痕的生成变多时，则焊球和铝晶垫的接合强度会降低，裂断方式则以焊球提高的比例变多。焊球提高于裂断方式的比例为0～未满10％时标示作◎，10％以上～未满20％时标作○，20％以上～未满50％时标作△。50％以上时标作×。
此外，电阻的上升率是以下述方法予以评估。
于引线架上已芯片焊接的测试组件群组(Test Element Group)芯片上焊接接合线，树脂封装已形成电路的试料。将这一试料置放于175℃空气中存贮1000小时后，测定电阻。比较已事先测定的恰于树脂封装后的电阻值，计算它的上升率。以电阻上升率未满20％时标作◎，20～50％时标作○，50％以上时标作×。
将各自的评估结果配合表1右栏并表示着。
对这些高温的接合可靠性而言，表1的结果不论何者，试样编号25、28、29为不良，27为不可。
再者，对本发明接合线1～24和比较例接合线25～31，就耐树脂流动性进行评估。
(耐树脂流动性)
将于弧状接合线长度3.5mm，弧状接合线高度220μm的条件下已接合的半导体IC芯片已予载置的基板，采用模塑成形装置以环氧树脂予以封装后，使用软X射线非破坏检查装置X射线投影已树脂封装的半导体芯片内部，测定接合线流动呈现最大部分的流动量，将以弧状接合线长度除算该值而得的值(％)予以定义作树脂流动性，予以评估此树脂流动性。表1右栏中，树脂流动性是各自以未满3％表示作◎，3％以上～未满5％时表示作△。5％以上时表示作×。
将各自的评估结果配合表1右栏并表示着。
Figure A20088001254000111

Claims (6)

1.一种金合金接合线，其特征在于，含有银0.02～0.3质量％、硅或锗的至少一种的合计为10～200质量ppm、余量为金而成的。
2.一种金合金接合线，其特征在于，含有银0.02～0.3质量％、铝或铜的至少一种的合计10～200质量ppm、余量为金而成的。
3.一种金合金接合线，其特征在于，含有银0.02～0.3质量％、硅或锗的至少一种的合计为10～200质量ppm、及铝或铜的至少一种的合计10～200质量ppm，余量为金而成的。
4.一种半导体装置，其特征在于，将以含有银0.02～0.3质量％、硅或锗的至少一种的合计为10～200质量ppm、余量为金而成的金合金接合线连接到铝或铝合金晶垫而成的。
5.一种半导体装置，其特征在于，将以含有银0.02～0.3质量％、铝或铜的至少一种的合计为10～200质量ppm、余量为金而成的金合金接合线连接到铝或铝合金晶垫而成的。
6.一种半导体装置，其特征在于，将含有银0.02～0.3质量％、硅或锗的至少一种的合计为10～200质量ppm、及铝或铜的至少一种的合计10～200质量ppm，余量为金而成的金合金接合线连接到铝或铝合金晶垫而成的。
CN200880012540A 2007-04-17 2008-03-26 高可靠性金合金接合线及半导体装置 Pending CN101663743A (zh)

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CN109003903A (zh) * 2018-07-02 2018-12-14 上杭县紫金佳博电子新材料科技有限公司 一种键合金丝及其制备方法
CN110284021A (zh) * 2019-06-27 2019-09-27 袁海 提高足金、足银硬度的中间合金及其制备方法与应用

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CN102489896A (zh) * 2011-12-18 2012-06-13 湖南科技大学 钎焊金属基复合封装材料的中温钎料薄带及其制备、钎焊
CN109003903A (zh) * 2018-07-02 2018-12-14 上杭县紫金佳博电子新材料科技有限公司 一种键合金丝及其制备方法
CN110284021A (zh) * 2019-06-27 2019-09-27 袁海 提高足金、足银硬度的中间合金及其制备方法与应用

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