CN103283009B - 用于连接半导体装置的高纯度铜细线 - Google Patents

用于连接半导体装置的高纯度铜细线 Download PDF

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CN103283009B
CN103283009B CN201280002217.5A CN201280002217A CN103283009B CN 103283009 B CN103283009 B CN 103283009B CN 201280002217 A CN201280002217 A CN 201280002217A CN 103283009 B CN103283009 B CN 103283009B
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high purity
copper fine
fine wire
purity copper
wire
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CN103283009A (zh
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三上道孝
合濑昌章
中岛伸一郎
三村利孝
弥永幸弘
市川司
高田晃
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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Abstract

[目的]通过制备使其截面组织成为双重组织的高纯度铜细线，铜细线的机械强度增加，并因此提供亚毫米直径的高纯度铜细线，其最适用于在短时间内反复进行多次开/关操作的高温功率半导体。[解决问题的手段]本发明涉及具有氧化物膜并且由纯度为99.999至99.99994质量％的铜制成的高纯度铜细线；该铜细线具有这样的截面组织，其中，10颗最大的晶粒共同地具有占截面组织总面积的5-25％的晶粒面积，且此晶粒面积的80％以上在相对于表面层的内侧，所述表面层被定义为具有细线直径的1/20以下的厚度；该高纯铜细线通过连续拉拔制成，并用于连接半导体装置。

Description

用于连接半导体装置的高纯度铜细线
技术领域
本发明涉及用于将半导体器件上的电极连接至外部电极的高纯度铜细线，且更具体地，涉及这样的高纯度铜细线：其具有强化的织构和亚微米级的直径，并且是由通过向99.9999质量％纯度的铜(Cu)中掺杂极少量的银(Ag)形成的铜基合金制成的。
背景技术
接合片(bondingpad)被安装在由如硅(Si)、碳化硅(SiC)和氮化镓(GaN)之类的材料制成的半导体器件上，并且由可以由铝(Al)、铝基合金如铝-加-1-质量％硅合金、铜、镍(Ni)、银和铂(Pt)制成的基板构成。这种基板可以通过湿法镀敷或者干法镀敷比如磁控溅射和气相沉积而被贵金属如金(Au)和银涂布，或可以用镍镀敷。在本说明书中，除非另外说明，“铝片”表示这些基板中的任一种。目前，通过如球焊、超声接合以及这两种方法的混合的方法，使用高纯度铜细线将半导体器件的铝片连接至引线框架等。
在高纯度铜细线中，通常使用具有0.1mm-0.9mm细线直径的圆形截面细线；存在着采用具有0.01mm-0.025mm细线直径的超细细线的情况，而且通过将圆形截面细线压扁而制成的扁平型细线(带)也可以用于半导体装置。在一些情况下，可以在使用前用薄的银涂层包覆这些超细细线和非超细细线。
在上述应用中，也使用由从99.9995质量％-99.99994质量％纯度的铜和极少量的银(0.0006质量％以下)制成的铜基合金制成的高纯度铜细线(在下文中，为了简化将此铜基合金称为“银掺杂铜合金”)；在这种情况下，为了松弛由铜细线牵拉引起的应力，对所述铜细线进行500摄氏度的最终热处理是一般的惯例(参见IP公开1和IP公开2，这些将在下文中描述)。这利用了连续拉拔的高纯度铜细线具有密堆的截面织构、并且这种高纯度铜细线几乎不被500摄氏度以下的热所影响的事实(参见图1)。
图1示出了这样的一种状况，其中，强拉拔的细线的织构中的晶粒受到热的影响，使得在显微组织回复之后相邻的晶粒彼此结合而转变为再结晶组织，并且一些晶粒开始再结晶。顺带提及，图1至5图各自示出了各个细线的几乎完整的横截面。
另一方面，当连续拉拔的高纯度铜细线在还原气氛下被加热至500摄氏度以上的温度时，通常在显微组织回复之后，发生被拉拔的组织向再结晶组织的转变，并且随后晶粒开始生长。
然而，在由从99.9995质量％至99.99994质量％的纯铜和极少量的银制成的铜合金制成的高纯度铜细线的情况下，这种内部织构中的转变以高速进行，并且一些晶粒粗大地变大(参见图2)，并且这种转变在整个细线内扩展，并形成退火的状况(参见图3)。在图2中，观察到主要晶粒的直径为细线直径的约40％。在图3中，观察到大晶粒的直径超过细线直径的50％。
超声接合方法可以应用于已经进行了低于500摄氏度最终热处理的高纯度细线，这通过将硬质合金刀具压在高纯度铜细线上并且借助其负荷和从硬质合金刀具发出的超声波振动的能量实施高纯度铜细线和铝片之间的接合而进行。应用超声波振动的效果包括：增大用于促进高纯度铜细线转变的接触面积；破坏和除去在整个高纯度铜细线上形成的具有5-10纳米(nm)厚度的表面氧化物膜，从而暴露在细线和由铝、镍等制成的接合片彼此接触处的金属原子如铝；以及在接合片和铜细线之间的界面中形成塑性流动，从而在两者彼此紧邻处扩展新形成的面的同时，引起这两者之间的原子-至-原子的结合。
另一方面，在对进行了500摄氏度以上最终热处理的高纯度铜细线应用球焊方法的情况下，在向高纯度铜细线吹惰性气体如氮气或还原气体如混合有5％氢的氮气的同时，在高纯度铜细线上施加高电压，从而在其端部制成熔球，并且通过硬质合金刀具将该熔球按压到铝片上，从而实施高纯度铜细线和铝片之间的接合。
然而，即使是由从99.9995质量％至99.99994质量％的纯铜和极少量的银(Ag)制成的铜合金制成的铜细线，也可能含有几个质量ppm至几十个质量ppm量级的氧，这源自原料高纯度铜粉。而且，在某些阶段中，不可避免地在高纯度铜细线的表面形成测得的厚度为5-10nm的Cu氧化物层(由氧化亚铜层和氧化铜层构成，后者在前者的上面)，所述阶段比如：通过连铸制备高纯度铜的细线预成型坯；在大气中对该细线预成型坯进行中间热处理；通过从该细线预成型坯连续拉拔制备高纯度铜细线；和使高纯度铜细线处于大气中。
由于这一原因，即使当在保持向高纯度铜细线吹还原气体的同时进行球焊时，在高纯度铜细线内部和晶界中存在的氧也会不断地移动进入表面上的氧化物层中，使得难以从表面上根除Cu氧化物层；因此，即使当为了球焊从具有0.01-0.08mm细线直径的高纯度铜超细线制成无空气球(freeairball，FAB)时，熔球也趋向于变硬并且它经常导致硅芯片中的裂纹。而且，即使在用于针脚式焊的0.06mm-1.0mm-直径的高纯度铜细线和铝片之间制成了优良的第一接合连接，但如果使其处于高温，氧化铝便从高纯度铜细线的铜和铝片的铝之间的接合界面生长，并且在不久之后形成氧化物层，这导致高纯度铜细线从接合界面脱离。
在具有0.06mm至0.1mm直径的更细的细线的情况下，这种现象更难被防止，因为难以控制负荷。
另一方面，在具有亚毫米直径如0.1mm-1.0mm的高纯度铜细线的情况下，难以防止芯片开裂，因为在拔丝之后直接得到的晶体织构或在拔丝之后直接进行约500摄氏度的热处理之后的织构保持密堆再结晶组织(参见图1)，使得即使通过超声波将其接合在铜片上，所需施加的负荷也随着细线直径变大而变大。而且，尽管可以在铜基板或镍基板上进行接合，但细线尺寸越大，握裹力越差，使得它尚未在工业上实行。
另一方面，当在保持向高纯度铜细线(如直径为0.01mm-0.08mm的用于球焊的高纯度超细细线、直径为0.06mm-1.0mm的用于针脚式焊的高纯度铜细线、和亚毫米直径的高纯度铜细线)吹送还原气体的同时，对已经在拔丝之后立即进行了几百毫秒以下的约800摄氏度的热处理并因此具有如图3所示织构的高纯度铜细线进行超声接合时，尽管因为这些铜细线没有制成熔球而在第一接合过程中硅芯片将不开裂，但是因为它们如此柔软，以致使得第一接合的接合强度不足，并且发生当重复热循环试验时接合强度下降的现象。用于音响器材的铜细线类似地经历这一现象，其中，晶粒尺寸相对大且基本均匀(参见下文所述的IP公开3)。
有鉴于此，通常的实践已经通过薄薄地在高纯度铜细线的表面设置一层贵金属如钯(Pd)，来防止氧化物层在高纯度铜细线的表面上的形成。然而，薄的贵金属层不是在其中没有裂纹、针孔等的，并且在高温最终热处理期间，已预料不可能阻止氧从大气通过贵金属层的穿透，且因此具有覆盖层的这种细线承受着与不具有覆盖层的细线所承受的相类似的问题。
另一方面认为，高纯铜细线用于需要对高温如100-200摄氏度具有耐久性的半导体器件，特别是用于在空调装置、光伏发电系统、混合动力汽车、电动力汽车等中使用的、在高温承受开-关切换的频繁重复的功率半导体器件中，并且其应用范围正在扩大。因为高温规格，用于这些功率半导体器件的工作条件比用于普通半导体器件的那些更加苛刻。例如，在用于交通工具中的功率半导体的情况下，对于高纯度铜细线，必须在接合位置抵抗通常经过最大100-150摄氏度的温度反复改变。因为存在着在这种高温环境下氧化的问题，所以在工业上不使用没有覆盖层的高纯度铜细线。这是由于以下事实：如果高纯度铜细线已经保持在高温下，则它经受改变(即使它是具有如图1所示的在拔丝之后直接得到的晶体织构的高纯度铜细线)即，在高纯铜细线中的拔丝织构从回复的显微组织转化成再结晶组织的改变，并且晶粒开始生长，且部分细线开始变得下垂并且最终整根细线变软(参见图3)。
现有技术公开
IP公开
[IP公开1]
日本专利申请公开2004-064033
[IP公开2]
日本专利申请公开2010-153539
[IP公开3]
日本专利4815878
发明概述
发明寻求解决的问题
本发明的目的在于解决：在高纯度铜细线在铝片上的第一接合之后，在高纯度铜细线的铜和铝片的铝之间的接合强度变得不稳定的状况；以及当在第一接合之后使半导体器件处于高温时，铝的氧化物从铜和铝片的铝之间的界面生长并且最终高纯度铜细线从铝片脱离的状况。
解决问题的手段
为了解决上述问题，本发明的发明人首先注意到以下事实：在一方面的固-气相阶段和在另一方面的固相阶段之间存在延迟，在所述固-气相阶段中，当将高纯度铜细线在惰性气氛中加热至高温时，高纯度铜细线的表面和内部中的氧被驱逐到气相中，在所述固相阶段中，在发生固-气相阶段之后，在高纯度铜细线中的拔丝织构从回复组织转化为再结晶组织并且发生晶粒生长。换言之，当高纯度铜细线的温度升高，同时通过恒定张力使细线保持张紧的情况下，氧从高纯度铜细线中驱逐的速度增加。随后，在发生晶粒生长之前的短暂时间过程中，即，在其中将热的高纯度铜细线用水等快速冷却的少于数百毫秒的短暂瞬间期间，通过在保持恒定张力的同时引起热收缩，在定义为具有高纯度铜细线直径的1/20以下的厚度的外层的再结晶组织附近，导致大量晶体缺陷如凹坑和空洞出现，从而停止高纯度铜细线的晶粒生长，并且同时增强高纯度铜细线的硬度。
此外，在快速冷却期间，气体如惰性气体被摄入到高纯度铜细线表面的晶体缺陷中，结果是高纯度铜细线表面中晶粒边界被惰性气体和其它气体密封，防止了氧通过晶粒边界进入。通过在晶粒开始从高纯度铜细线中的再结晶组织生长之前固结所述内部织构，可以防止高纯度铜细线中的裂纹生长，并防止高纯度铜细线本身在细线的使用寿命期间下垂，而在高温的频繁重复开-关(of-off)切换操作仅仅逐渐地促进在表面层中的大量晶体缺陷的晶格松弛。
用于连接半导体装置的本发明的高纯度铜细线的特征在于：在被氧化物膜包覆的、具有99.999质量％-99.99994质量％纯度的、且具有不小于0.01mm但小于1mm的细线直径的连续拉拔的高纯度铜细线中，铜细线具有这样一种截面组织，其中最大的10颗晶粒具有占据该截面组织总面积的5-25％的总晶粒面积，并且此晶粒面积的80％以上在相对于表面层的内侧，所述表面层被定义为具有细线直径的1/20以下的厚度。
高纯度铜细线的纯度需要为，铜占99.999质量％-99.99994质量％。高纯度铜细线的机械强度主要取决于细线的内部织构，其次取决于具有几个纳米厚度的Cu氧化物层(CuO/Cu2O)。
当将处理过的材料加热时，在拔丝之后得到的密堆织构从回复织构转化为再结晶组织，且随后晶粒开始生长，而且响应这一系列由加热引起的晶粒织构的变化，铜基体中的氧从Cu氧化物(CuO/Cu2O)层移动通过晶界至外部，并且作为结果，表面中的Cu氧化物(CuO/Cu2O)层变薄。除了银以外的杂质的量为30质量ppm以下。在高纯度铜中的主要杂质为铁(Fe)、镍、锡(Sn)、硅、磷(P)和硫(S)。如果这些杂质的总量超过30质量ppm，则杂质的钉扎效应改变晶体织构，并且使得不可能通过加热和冷却来控制晶体织构。
这些杂质元素难于在铜基体中析出，因为它们具有对铜基体的亲和性，并且即使它们在铜基体中形成了氧化物，它们也几乎不阻碍通过热变化导致的由铜的氧化物形成的晶粒织构中的一系列变化。由于这一原因，响应通过加热产生的热能的量来改变高纯度铜细线的晶粒织构成为可能。高纯度铜细线具有99.997质量％的纯度是必须的。如果如在换流控制器的情况中一样，功率半导体装置以高速反复地切换开和关，则通过热疲劳引起在细线中发生开裂，但是当纯度为99.997质量％以上时，这可以被防止，因为再结晶温度低并且因此再结晶迅速地消除机械加工的残余应力并且使在细线中难以形成亚晶粒。因此，高纯度铜细线的纯度需要为99.997质量％以上，且优选为99.999质量％以上，更优选为99.9999质量％以上。
然而，当纯度超过99.99994质量％时，过高的纯度导致在室温发生再结晶，并且这导致在接合时变形的球的直径的不一致性更大；此外，在具有0.01mm-0.08mm细线直径的用于球焊的超细细线的情况下，细线本身失去刚性。
因此，高纯度铜细线的纯度必须在99.999质量％-99.99994的范围内。
而且，因为高纯度铜细线具有高热导率，所以出于高纯度铜细线的晶体织构的可控制性的观点，细线直径在亚毫米级别是优选的。如果直径小于0.1mm，细线本身过弱，使得进行如在接合之后用树脂模制整根细线或是设计较短的线圈距离这样的事项成为必需的。
当杂质(除了银以外，参照下文)的总量为30质量ppm以上时，这些杂质与存在于铜基体中的氧结合之后，在铜基体中形成氧化物。这些氧化物的晶粒易于在经过强机械加工的密堆晶粒的晶界中析出，并且比高纯度铜的晶粒织构更耐温度变化，使得它控制了高纯度铜细线的晶体织构。由于这一原因，当进行加热时而使密堆的内部织构(参见图1)转变成退火的内部织构(参见图3)时，该转化在某个温度以上立刻发生，并且逐渐地改变高纯度铜细线的晶粒织构则是不可能的。
银元素作为与铜的完全固溶物质存在于在铜基体中，并且银不在铜晶粒的晶界析出。另一方面，尽管银在电离趋势和化学性质方面接近铜，但是它比铜更带正电，并且与铜相比，与氧反应的反应性较差。银本体将氧摄取进入银基体但不被其氧化，并且允许氧通过它。由于这一原因，即使在纯度为99.997质量％-99.9994质量％的氧化物膜包覆的铜中所含的银多至1-25质量ppm，它也不会对铜基体和氧之间相互作用产生病态影响。然而，如果银含量超过25质量ppm，则铜的纯度相对降低，使得难以响应通过加热产生的热能的量而改变高纯度铜细线的晶粒织构。因此，银的含量规定为1-25质量ppm。
在高纯度铜细线的截面组织中的最大的晶粒可以通过热能量突然扩大，如图2中所示。然而在具有99.997质量％-99.99994质量％纯度的氧化物膜包覆的铜的情况下，热能平均地分配在整个基体中，因此大晶粒近乎均匀地生长(参见图4)。作为结果，形成了不少数量的基本上是大的晶粒，并且作为各个大晶粒的尺寸在相对意义上减少，因此大晶粒的平均晶粒直径规定为细线直径的5-25％。作为结果，控制其中内部的氧被驱逐至气相的固-气相阶段和在发生晶粒生长之前立即发生的固相阶段之间发生的小的热能改变成为可能。
在本发明中，出于高纯度铜细线的机械强度是受晶粒织构控制的这一原因，最大晶粒的平均晶粒直径尽可能小是优选的，且因此，在紧接着氧气从铜基体内部排出至气相中的时候，最大晶粒的平均晶粒直径的大小被规定为细线直径的5-25％。优选地，最大晶粒的平均晶粒直径为细线直径的5-20％(图4)。
在本发明中，还必需的是，高纯度铜细线的截面组织中，最大的10颗晶粒的总晶粒面积为高纯度铜细线的截面组织总面积的5-25％，并且最大的10颗晶粒的总晶粒面积的80％以上在相对于表面层的内侧，所述表面层被定义为具有细线直径的1/20的厚度。优选地，最大的10颗晶粒的总晶粒面积为截面组织的总面积的10-20％，且最大的10颗晶粒的总晶粒面积的90％以上也在相对于表面层的内侧，所述表面层定义为具有细线直径的1/20的厚度(参见图4)。这一规定的原因在于，在本发明中，最大晶粒近乎相等地生长，且如果在表面层中存在着其中强应变的位错向着晶界壁累积的小晶粒，则高纯度铜细线的机械强度由于双重组织效应而被强化。
在本发明中，氧化物膜的厚度为1-6nm也是优选的。这是因为以下事实：当作为热处理的结果，铜基体内部的氧被驱逐至气相中时，氧化物膜的厚度变得更薄，且当氧化物膜的厚度小于1nm时，铜基体内部的氧的量对于轮廓清晰的晶界的存在而言变得过少，且作为结果，高纯度铜细线内部的机械强度变弱。另一方面，如果氧化物膜的厚度为6nm以上时，即使实现了优良的第一接合，在这种情况下大量存在的在铜基体中的氧也在使用中渗透进入接合截面并且扩散通过氧化物层，且接合强度变弱。
现在，连续拉拔的高纯度铜细线在进行热处理的同时，使其保持处于恒定张力。在连续拉拔系统中，从最终的金刚石模口的出口至卷绕线轴的入口，该细线上都基本上被施加这种恒定张力，且如此设计，以通过张力调节辊等使得在其它阶段发生的振动不传播至铜细线，且在热处理阶段和冷却阶段之间保持张力恒定，这使得对高纯度铜细线施加预定的热能成为可能，所述热能的大小取决于热处理温度和热处理位置。
优选的是，在600摄氏度至800摄氏度的温度，将连续拉拔之后的铜细线在连续地保持在恒定张力下的同时快速加热几百毫秒以下的短暂时刻。为了可靠地控制高纯度铜细线的晶体织构，采用在650摄氏度至750摄氏度之间的温度是更优选的。如果在非氧化性气氛中加热高纯度铜细线，则首先发生的是，氧从高纯度铜细线的表面和内部被驱逐到气相中。热处理温度越高，被恒定张紧的高纯度铜细线便延展得越长，由此晶粒边界既在前后方向上也在左右方向上受拉，且作为结果，氧向气相中的驱逐进行得更有效，但是到晶粒生长开始为止的时间跨度变得更短，并且通过用水等快速冷却的手段来控制高纯度铜细线中的晶粒数量变得困难。
顺带提及，当加热温度约为500摄氏度且加热时间为数百毫秒以下时，还原性气氛的使用将不会使在高纯度铜细线表面的数纳米厚的Cu氧化物层还原很多。
而且，如果杂质元素的量太大，则在高纯度铜细线表面存在的厚度为数纳米的Cu氧化物层变得难以减少，因为这些杂质元素容易与铜基体中的氧反应形成氧化物，使得在接合过程中更有可能发生芯片破损。
据认为，在其中Cu氧化物层减少的固-气阶段具有如下机理。
当加热至高温时，高纯度铜细线的最外面的氧化铜(CuO)层一个原子层接一个原子层地离开，并且被释放在惰性气氛中。随后，紧接在高纯度铜细线的最外层之下的氧化亚铜(Cu2O)层析出铜并变成氧化铜(CuO)。这种被还原的铜与来自铜基体的、首先通过晶粒边界之后达到的氧相结合，并且再次形成氧化亚铜(Cu2O)层。然而，因为铜基体中的氧的量如此之小，使得不久之后，所能通过晶界的氧便耗尽，因此在原始的氧化亚铜(Cu2O)层中存在的被还原的铜被吸收进入铜基体中。作为结果，最外面的氧化铜(CuO)层的厚度逐渐降低，而紧接在下面的氧化亚铜(Cu2O)层更加迅速地变薄。
当在还原性气氛中进行约800摄氏度的高温热处理时，通常为6nm以上的Cu氧化物层厚度(该厚度为氧化铜(CuO)层的厚度与氧化亚铜(Cu2O)层厚度的之和)降低至约1nm。
当已经被连续拉拔的铜细线接着在600摄氏度以上的温度进行数百毫秒以下的快速加热，并且在非氧化性气氛中保持某个温度时，铜细线开始经历改变，使得如图1中所示的拔丝后的晶体织构转化为如图4中所示的再结晶之后的晶体织构。用于本发明的热处理的气氛应当是非氧化性气氛，即惰性气氛或还原性气氛。因为高纯度铜细线中的再结晶组织是在非氧化性气氛中形成的，所以在铜基体的晶界中不存在额外的氧。顺带提及，随着温度变得更高，在环境中损失的热增加，使得直接测量细线的温度变得困难；然而，可以通过视觉观察看到，高纯度铜细线具有暗红炽热色至樱桃红色，并且被假定为处于600-800摄氏度的范围内。
现在，当热处理的温度过高时，被拉拔的细线在某个更高的温度开始非常松弛地延展，并且高纯度铜细线断裂，因此上述为高温极限。用于加热的可能的方法包括用电炉加热、电加热、用光照加热和蒸汽加热。
在保持高纯度铜细线处于某一拉伸的同时，将铜细线从高温快速冷却至室温，这将不会导致再结晶的高纯度铜细线的晶体织构的改变，但是随着铜细线的固化，由于快速冷却所导致的热收缩在铜基体中的再结晶组织附近出现许多结晶缺陷如凹坑、空洞和裂纹。由于这一原因，在高纯度铜细线中的晶界的织构(参考图4)变得比已经通过完全退火而粗大地膨胀的晶粒的织构(参考图3)更硬，且通过在更硬的晶界中的这些晶体缺陷的功效，提供了具有一定膨胀性和一定断裂强度的高纯度铜细线，即，提供了具有机械强度的高纯度铜细线。而且作为水接触和在含有曾是水的一部分的蒸汽的气相中的接触的结果，许多晶体缺陷如凹坑和空洞出现在高纯度铜细线的表面，并且这导致固化的高纯度铜细线的表面具有升高的机械强度。
在本发明的高纯度铜细线上铺设了薄的贵金属涂层的情况中，类似地发生这种出现缺陷和固化的现象，并且钯(Pd)是特别有效的，因为它在高温吸留氢。此外，通过使用电加热，可以保持从内部加热细线的同时，将高纯度铜细线浸没在水中，使得在晶粒边界中出现大量应变点如位错，因此晶界变得轮廓清晰并增强了高纯度铜细线的内部机械强度。而且，通过在高纯度铜细线表面中的氧化物层和内部铜基体金属之间的热膨胀性和收缩性的差别，在接合的时候，具有小于6nm厚度的、优选4nm以下厚度的在细线表面上的氧化物层变得容易破坏，使得芯片破损变得较不频繁，且接合强度提高，接合强度的不均衡性减轻。
当高纯度铜细线中的再结晶组织在非氧化性气氛中形成时，没有不受欢迎的外部氧进入铜基体中的晶粒边界，使得在第一接合之前没有源于铜基体内部的高纯度铜细线表面氧化。而且，在半导体装置工作期间，将不会从铜基体内部增加氧。
发明效果
使用根据本发明的用于连接半导体装置的高纯度铜细线，由于高纯度铜细线的双重组织的原因(在所述双重组织中铜基体中的晶体织构含有若干最大晶粒和小晶粒的混合物(参考图4))，以及由于通过小晶粒的晶粒壁控制应力(所述应力与晶体缺陷等有关，在快速冷却期间出现在铜的表面层中)的原因，可以保证高纯度铜细线的强度。而且，根据本发明，在铜基体中不存在过剩的氧，因此氧倾向于过于贫乏，使得在对第一接合之后的高纯度铜细线进行反复开-关切换(其同化了将它留在高温环境中的状况)时，高纯度铜细线将很难从与之接合的半导体装置的铝片的接合界面上分离。此外，因为铜细线本身是高纯度的，所以甚至是对于亚微米级厚度的高纯度铜细线而言，被接合在铝片上也是可能的，而这在过去是困难的，条件是在铝片下铺有硬质阻挡金属，且由于低的再结晶温度，不发生热循环疲劳。
另一方面，在构成了第二接合的在铜基板或镍基板上超声波接合的情况下，结果将自然是有利的，因为存在厚度不大于1-6nm的超薄Cu氧化物层。此外，如果采用电加热作为热处理手段，可以增加铜表面层中的晶体缺陷如空洞的数量，从而使对于高纯度铜细线的处理温度和时间的管理变得更容易，结果是对双重组织体系的控制变得不会出错。此外，将细线结合在由碳化硅或氮化镓(GaN)制成的半导体芯片上也变得可能(垫通常由铝、铜、镍或金制成)。
如果本发明的用于连接半导体装置的高纯度铜细线是具有0.1mm-0.6mm细线直径的细线，是最有利的。对于热处理，优选这样的条件，使得温度突然提升至700摄氏度-850摄氏度，同时从热处理阶段开始到冷却阶段开始所流逝的时间短至0.05-1.3秒，更优选其为0.1-1.0秒。如果热处理温度低于上述，则所需的热处理时间变得更长，并且尽管这使得控制更简单，但所需的热处理炉的长度变得更更长。炉长通常为0.5-2.0米。铜的纯度越高，所需的热处理时间将越短。当铜的纯度增加时，再结晶温度变得更低，但是因为在细线温度通过加热而上升的速度和细线织构从再结晶组织向晶粒生长织构的转化速度之间没有比例关系，所以适时地控制变得非常重要。可以通过加长垂直热处理炉或通过降低高纯度铜细线通过热处理炉的速度，来控制热处理时间。
而且，上述非氧化性气氛优选并非不含有氢气的还原性气氛。出于除去高纯度铜细线的氧化物层以及除去铜基体中的氧的观点，氢气氛是最优选的；然而，考虑到经济和安全，混合有3-5％氢的氮气氛是优选的。现在，在用贵金属钯(Pd)涂布高纯度铜细线的情况下，推荐氢气氛，因为钯吸留氢原子。如果涂层被覆有纯度为99.99质量％以上、或优选99.999质量％以上的银的贵金属膜，则通过热处理，引起银向铜基体中扩散。
在本发明中，在冷却阶段中采用水冷却的原因在于，绝对无误地完成将高温铜细线高速冷却至室温。此处，“室温”表示在铜基体中发生很少的再结晶晶界织构向晶粒生长织构的转化时的温度；然而，因为高纯度铜细线的再结晶温度如此之低，所以优选“室温”尽可能低。因为高纯度铜细线的热导率相当高，当将其置于水中时，它立即冷却。可以使用含有氢离子的水如电解还原离子水、氨水、含醇的水(alcoholwater)等。顺带提及，当加入有机溶剂如苯并三唑时，量应当尽可能小，因为它在接合期间留下残余的碳。
实施例
我们将描述本发明的实施例。
{实施例1}
具有2mm直径且由纯度为99.99992质量％的铜制成的铜细线预成型坯的氧化物层由0.5-nm-厚的二氧化铜最外层和3-nm-厚的一氧化铜次层构成。将预成型的铜细线连续拉拔，以获得直径为0.2mm的铜细线(参考图1)。正如在图1的截面照片中清楚所见，即使在500摄氏度的低温热处理之后，在铜基体中仍存在通过拔丝引起的微织构。
将此铜细线以100m/分钟的速度运行通过具有含5％氢和95％氮的成型气体(forminggas)气氛的垂直热处理炉(700摄氏度读数；长度50cm)，并且在20摄氏度的纯水中冷却。在水冷之后，将它卷绕在线轴上；高纯度铜细线的氧化物膜已变薄，并且它由最外面的0.1-nm-厚的二氧化铜层和3-nm-厚的一氧化铜层构成。该高纯度铜细线的伸长百分数为28％，且断裂强度为约22.6kPa(23kgf/mm2)。此铜细线的再结晶组织的截面组织示于图4中。如在图4的照片中所见，在铜基体中，可归因于拔丝的微织构已经消失，并且完全被再结晶组织取代。而且，图4的截面照片显示了，约细线直径的1/10宽的铜细线的铜细线表面部分以均匀的微晶粒为主。图4的截面照片显示了，在铜基体的中部附近存在三个相等尺寸的大晶粒，在铜基体中存在十个或九个稍微小尺寸的晶粒，且在这些晶粒中的间隙中填充着微晶粒。图4的高纯度铜细线中的大晶粒的平均直径为细线直径的6.7％。
使用图4的高纯度铜细线，进行超声接合。我们称此为实施例1。
超声接合的条件如下。
高纯度铜细线的细线直径为0.48mm，线圈长度为10mm，线弧高度为3mm。发明人使用H&KCorporation生产的用于粗的细线的焊线机BJ935型全自动焊线机，在同化了(assimilating)芯片的基板(尺寸为50mmx50mmx0.6mm(厚度)的铝基板，其上已经通过磁控溅射涂布了10-微米-厚的铜层)上，在向基板吹氮气的同时，进行这种高纯度铜细线的超声接合。其它接合条件为：频率为120kHz，任意调节负荷和超声模式，且对总共100个样品等同地使用第一和第二超声接合操作(n＝40)。所用的超硬刀具和接合导向装置是由H&KCorporation生产的，它们与线的尺寸相匹配。在第一接合之后，将变形球的直径的不均衡(目标是细线直径x1.3)评价为初始握裹力，并且所得的结果示于下面的表1中。
接着，发明人对于实施例1的如此接合的高纯度铜细线进行了可靠性测试。此可靠性测试包括，使细线处于250摄氏度96小时，随后是细线通过10,000次温度循环，每次循环由在200摄氏度的3-分钟-时长的加热随后在-60摄氏度的3-分钟-时长的冷却构成。其后，测量第一接合的剪切强度，且所得的结果示于表1中。
现在，在剪切测试中的可靠性(比强度)是指将可靠性测试之后测得的剪切强度除以接合之后立即测得的(初始)剪切强度所得的值。换言之，比强度越大，对可靠性评价越高。
如由结果清楚可见，在图4中所示的双重组织化的高纯度铜细线的变形球直径将类似于拔丝后的铜细线的情况，并且具有其本身的刚性，并具有稳定的剪切强度。而且在剪切测试之后对剥离的表面的观察显示，没有通过氧化物在接合界面中的聚集导致的氧化物剥离的证据。
{实施例2}
直径为5mm且由含有20质量ppm的银、2质量ppm的铁及余量99.9997质量％的铜的五-九-纯铜制成的铜细线预成型坯的氧化物层具有0.5-nm-厚的二氧化铜最外层和4-nm-厚的一氧化铜次层，这与实施例1的细线预成型坯类似。将此铜细线预成型坯连续拉拔，以获得直径为0.5mm的铜细线。此铜细线的截面组织约略地类似于在图4中所示的截面组织。
将此铜细线以50m/分钟的速度运行通过含有氮气气氛的红热(约800摄氏度)的垂直热处理炉(长度100cm)，并将其在30摄氏度的纯水中冷却。在水冷之后，将它卷绕在线轴上；类似于实施例1的情况，由二氧化铜层和一氧化铜层构成的高纯度铜细线的氧化物膜薄至3nm。该高纯度铜细线的伸长百分数为30％，且断裂强度为约21.6kPa(22kgf/mm2)。此铜细线的截面组织类似于在图4中所示的截面组织，主要由再结晶组织构成，并且在多个位置可以观察到晶粒生长的开始。实施例2的高纯度铜细线中的大晶粒的平均直径为细线直径的6.3％。
以与实施例1中类似的方式对此高纯度铜细线进行超声接合，并且进行类似于实施例1中所完成的评价。结果包括在下文的表1中。
{实施例3}
直径为5mm且由含有5质量ppm的银、5质量ppm的铁、2质量ppm的镍、5质量ppm的硅、10质量ppm的磷及余量99.9997质量％铜的铜制成的铜细线预成型坯的氧化物层具有0.5-nm-厚的二氧化铜最外层和5-nm-厚的一氧化铜次层。将此铜细线预成型坯连续拉拔，以获得直径为0.5mm的铜细线。此铜细线的截面组织约略地类似于在图4中所示的截面组织。
将此铜细线以50m/分钟的速度运行通过含有氮气气氛的红热(约800摄氏度)的垂直热处理炉(长度100cm)，并将其在30摄氏度的纯水中冷却。在水冷之后，将它卷绕在线轴上；由二氧化铜层和一氧化铜层构成的高纯度铜细线的氧化物膜薄至4nm。实施例3的高纯度铜细线中的大晶粒的平均直径为细线直径的7.1％。
以与实施例1中类似的方式对此高纯度铜细线进行超声接合，并且进行类似于实施例1中所完成的评价。结果包括在下文的表1中。
由这些结果明显可见，类似于图4中所示类型的高纯度铜细线将具有类似于铜细线在拔丝之后的情况的变形球直径，并且具有其本身的刚性，并具有稳定的剪切强度。而且在用酸将高纯度铜细线溶解掉之后，对接合界面的观察显示出，在剪切测试之后被剥离的表面显示没有氧化物剥离的证据，所述氧化物剥离是由氧化物在接合界面中的聚集导致的。
[比较例1]
现在我们将解释有关本发明的比较例。
{比较例1}
除了将类似于在实施例1中所用的铜细线从暗红热状态(500摄氏度或略高)快速冷却之外，按照实施例1那样进行相同的程序。在水冷之后，将它卷绕在线轴上；由0.5-nm-厚的最外面的二氧化铜层和4-nm-厚的一氧化铜次层构成的高纯度铜细线的氧化物膜没有经历在热处理期间的变化。该高纯度铜细线的伸长百分数为6％，且断裂强度为约31.4kPa(32kgf/mm2)。该铜细线的截面织构在热处理之前和之后没有改变，并且不具有图1的再结晶组织。此高纯度铜细线中的大晶粒的平均晶粒直径为细线直径的0.2％。
以类似于实施例1中的方式对此高纯度铜细线进行超声接合，并且进行类似于实施例1中所完成的评价。结果包括在下文的表1中。从这些结果可见，比较例1的高纯度铜细线产生了合适尺寸的变形球，但是作为剪切测试结果的可靠性(比强度)太弱，且高温接合强度没有保证。而且，对这种具有低接合强度的高纯度铜细线的接合界面的观察显示，剥离面显示了通过氧化物在接合界面中的聚集导致的氧化物剥离的证据。
{比较例2}
除了将具有5mm直径且由含有25质量ppm的银、10质量ppm的铁、6质量ppm的镍、8质量ppm硅、15质量ppm磷及余量99.9997质量％铜的铜制成的铜细线预成型坯拉伸并从樱桃红热状态(850摄氏度或略高)快速冷却之外，按照实施例2那样进行相同的程序。在水冷之后，将被拉拔的细线卷绕在线轴上；由二氧化铜层和一氧化铜层构成的高纯度铜细线的氧化物膜具有距离表面2nm的厚度。该高纯度铜细线的伸长百分数为15％，且断裂强度为约17.7kPa(18kgf/mm2)。此铜细线的截面织构示于图3中。如由图3的截面照片可见，在铜基体中的所有晶粒都生长了。此高纯度铜细线中的大晶粒的平均直径为细线直径的25％。
此高纯度铜细线的评价结果等包括在下表中。由这些结果可见，比较例2的高纯度铜细线具有基本不均衡的变形球尺寸，且因此不稳定。剪切测试显示，此高纯度铜细线的可靠性低，且其高温接合强度也不稳定。
[表1]
如上表可见，除了比较例2的情况以外，变形球尺寸的不均衡性(R)均良好。关于可靠性(比强度)，比较例1和2都差，而其它良好，而且可以看出铜的纯度越高，本发明的双重组织起到的效果越好。
顺带提及，在实施例和比较例中，发明人使用了0.48-mm-直径的细线，且如果这被拉伸得更细，则双重组织的区别变得难以察觉，但是可以确定，当使用直径为0.06mm(60微米)的细线用于针脚式焊时和当使用直径为0.025mm(25微米)的细线用于球焊(FAB接合)时，上述测试的结果的趋势不会改变。
附图简述
[图1]
图1是在高纯度铜细线被连续拉拔并在500摄氏度被热处理数百毫秒之后获得的截面组织的照片。
[图2]
图2是在过度热处理的情况下的截面组织的照片。
[图3]
图3是在极端过度热处理的情况下的截面组织的照片。
[图4]
图4是在实施例1的情况下，在适量热处理之后的截面组织的照片。
[图5]
图5是在实施例2的情况下，已经接受了最适量热处理的截面组织的照片。

Claims (9)

1.一种连续拉拔的高纯度铜细线，所述铜细线被氧化物膜包覆，具有99.999质量％-99.99994质量％的纯度，具有不小于0.01mm但小于1mm的细线直径，且用于连接半导体装置，其中，所述细线具有这样的截面组织：最大的10颗晶粒具有占据所述截面组织总面积的5–25％的总晶粒面积，并且所述最大的10颗晶粒的总晶粒面积的80％以上在相对于表面层的内侧，所述表面层被定义为具有所述细线直径的1/20以下的厚度。
2.根据权利要求1所述的连续拉拔的高纯度铜细线，其中，所述氧化物膜具有1–6nm的厚度。
3.根据权利要求1所述的连续拉拔的高纯度铜细线，其中，银、铁、镍、锡、硅、磷和硫的总含量少于10质量ppm。
4.根据权利要求1所述的连续拉拔的高纯度铜细线，其中，铁、镍、锡、硅、磷和硫的总含量少于1质量ppm。
5.根据权利要求1所述的连续拉拔的高纯度铜细线，其中，所述最大的10颗晶粒具有占所述截面组织总面积的10–20％的总晶粒面积。
6.根据权利要求1所述的连续拉拔的高纯度铜细线，其中，所述最大的10颗晶粒的总晶粒面积的90％以上在相对于所述表面层的内侧，所述表面层被定义为具有所述细线直径的1/20以下的厚度。
7.根据权利要求1所述的连续拉拔的高纯度铜细线，其中，所述高纯度铜细线具有0.1mm–1.0mm的直径。
8.根据权利要求1所述的连续拉拔的高纯度铜细线，其中，所述高纯度铜细线具有0.06mm–0.1mm的直径。
9.根据权利要求1所述的连续拉拔的高纯度铜细线，其中，所述高纯度铜细线具有0.01mm–0.08mm的直径。
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CN105161476B (zh) * 2015-06-19 2018-10-30 汕头市骏码凯撒有限公司 一种用于细间距ic封装的键合铜丝及其制造方法
JP6369994B2 (ja) * 2015-09-02 2018-08-08 田中電子工業株式会社 ボールボンディング用銅合金細線
JPWO2021111908A1 (zh) * 2019-12-02 2021-06-10
WO2021167083A1 (ja) * 2020-02-21 2021-08-26 日鉄マイクロメタル株式会社 銅ボンディングワイヤ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101842505A (zh) * 2007-11-06 2010-09-22 田中电子工业株式会社 接合线

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289348A (ja) * 1985-10-16 1987-04-23 Hitachi Cable Ltd 銅ボンデイングワイヤとその製造方法
JPH02254737A (ja) * 1989-03-28 1990-10-15 Mitsubishi Metal Corp 半導体装置用Ｃｕボンディングワイヤ
JPH0374851A (ja) * 1989-08-16 1991-03-29 Tanaka Kikinzoku Kogyo Kk 半導体素子用ボールボンディング線
JPH0747809B2 (ja) * 1991-02-14 1995-05-24 同和鉱業株式会社 粗大結晶粒からなる高純度銅線の製造法
JP4260337B2 (ja) * 2000-04-24 2009-04-30 新日鉄マテリアルズ株式会社 半導体実装用のボンディングワイヤ
US7969021B2 (en) * 2000-09-18 2011-06-28 Nippon Steel Corporation Bonding wire for semiconductor device and method for producing the same
JP4846137B2 (ja) * 2001-08-10 2011-12-28 株式会社日鉄マイクロメタル 金ボンディングワイヤの熱処理方法及び熱処理装置
TWI237334B (en) * 2002-04-05 2005-08-01 Nippon Steel Corp A gold bonding wire for a semiconductor device and a method for producing the same
KR101016158B1 (ko) * 2005-01-05 2011-02-17 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
KR100702662B1 (ko) * 2005-02-18 2007-04-02 엠케이전자 주식회사 반도체 패키징용 구리 본딩 와이어
JP4815878B2 (ja) * 2005-05-31 2011-11-16 三菱マテリアル株式会社 銅線及びその製造方法
JP4691533B2 (ja) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 半導体装置用銅合金ボンディングワイヤ
JP5077416B2 (ja) * 2010-02-08 2012-11-21 日立電線株式会社 軟質希薄銅合金材料、軟質希薄銅合金線、軟質希薄銅合金板、軟質希薄銅合金撚線およびこれらを用いたケーブル、同軸ケーブルおよび複合ケーブル

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101842505A (zh) * 2007-11-06 2010-09-22 田中电子工业株式会社 接合线

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